CN108519633A - A kind of photor crystal laser amplitude limit structure with nonlinear transmission - Google Patents
A kind of photor crystal laser amplitude limit structure with nonlinear transmission Download PDFInfo
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- CN108519633A CN108519633A CN201810329957.9A CN201810329957A CN108519633A CN 108519633 A CN108519633 A CN 108519633A CN 201810329957 A CN201810329957 A CN 201810329957A CN 108519633 A CN108519633 A CN 108519633A
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- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
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Abstract
The photor crystal laser amplitude limit structure with nonlinear transmission that the invention discloses a kind of, it is characterised in that：Including dielectric posts and medium, dielectric posts are 3.1~3.6 in the square arrangement of 11 rows 11 row and dielectric posts refractive index, dielectric distribution is between dielectric posts, medium is air and refractive index is 1, and the spacing between adjacent media column is 0.415~0.43 μm, a diameter of 0.16~0.175 μm of dielectric posts, wherein, it is located at the dielectric posts vacancy of 1~3,6,9~11 row in 6th row dielectric posts, two dielectric posts of the 4th, 8 row are constant, and the dielectric posts of the 5th, 7 row use Cole's dielectric posts.The present invention can be effectively used in various 1.064 mum wavelength laser limiter systems, realize to the high transmittance of dim light and the highly attenuating rate of strong light.
Description
Technical field
The present invention relates to a kind of photor crystal laser amplitude limit structure, especially a kind of photon with nonlinear transmission is brilliant
Volumetric laser amplitude limit structure.
Background technology
This concept of photonic crystal proposes by Yablonovitch and John in the paper respectively independently delivered for 1987,
It is the crystal structure being made of in periodic arrangement in space the dielectric substance of different refractivity.Photonic crystal is as a kind of people
Work composite material has with extraordinary physical characteristics such as nature substance no forbidden photon band, photon locals in optoelectronic areas
Important application prospect.Forbidden photon band is analogous to the concept of forbidden band in electron crystal, when the state of photon is located exactly at photonic crystal
Forbidden band when, then the propagation of photon will be prohibited.Photon band gap is divided into complete photonic band gap and incomplete photon band gap.Complete light
Subband gap refers to that will all forbid to stateful photon spread in certain frequency range, i.e., no matter the polarization side of the photon
To or the direction of propagation how, propagation will all be prohibited.Similarly, then incomplete photon band gap can only forbid the photon of certain orientation
It propagates.The property of photon band gap is mainly determined by 3 factors：The lattice types of photonic crystal ordered structure constitute photonic crystal
Electrolyte dielectric constant when dielectric constant higher material packing ratio.1-D photon crystal only with incident direction
There is band gap in angled circular cone；The band gap of 2 D photon crystal is widened compared to 1-D photon crystal, is being emptied
Between formed " equatorial zone ", in some cases band gap expand to entire plane.Compared with a peacekeeping 2 D photon crystal, three-dimensional photon
Crystal can realize complete photonic band gap in theory, but three-dimensional photon crystal structure difficulty in actual preparation is larger.
In many laser application scenarios, it is desirable that the lower light of power density has the higher light of high transmittance, power density to have
Low transmission needs a kind of laser amplitude limit structure with nonlinear transmission.The research base of laser amplitude limit structure at present
In the optical effects such as non-linear absorption, scattering and refraction and Transformation Principle.Anti- saturated absorption non-linear laser amplitude limit material is two
Just at home and abroad most study is also most deep one kind to eleventh century in various non-linear amplitude limit materials.Wherein C60 is research
A kind of most organic materials, but since this kind of amplitude limit structure is generally basede on organic liquid substances, be easily affected by the external environment,
Application scenario is restricted.With the rapid expansion of artificial synthesized photonic crystal research work, many scholars utilize photonic crystal
Being in the electromagnetic wave within photonic band gap in the photonic crystal with band gap, frequency will be prohibited to propagate this characteristic, separately
On the one hand can be changed with the variation of light intensity of incident light using the refractive index of nonlinear dielectric, so that nonlinear material refraction
Rate can be moved with the variation of incident intensity, so that such photonic crystal has dynamic control output intensity
Function.It can be produced the optical Limiting device haveing excellent performance as the material of optical limiter.Such as Chen Ming in 2006 et al.
(bibliography 1：Chen Ming, Ma Shaojie, Li Chunfei, Xu Mai, Wang Weibiao, Xia Yu are reflected based on 1-D photon crystal band gap
YAG laser light protective goggles [J] shines journal, 2004 (03):325-328) have devised a kind of linear 1-D photon crystal band of combination
Gap reflects and glass substrate absorption is in the YAG laser light protective goggles of one, it drops the laser transmittance that wavelength is 1.064 μm
Low 9 orders of magnitude, and can be resisted using the strong absorption to 1.064 μm of light waves of phosphate glass substrate comprehensive
Incident laser.The local electromagnetic field of non-linear photon crystal, the ability for controlling propagating electromagnetic radiation are general blocky non-linear crystalline substances
What body and Quasi phase matched crystal did not had, and the local fields and adjustable dispersion that enhance can be such that nonlinear interaction obtains more preferably
Performance.Michael Scalora in 1994 et al. (bibliography 2：Dowling J P,Scalora M,Bloemer
MJ.The photonic band edge laser:A new approach to gain enhancement[J].Journal
of Applied Physics,1994,75(4):It 1896-1899) reports and is realized to super using Nonlinear One-dimensional Photonic Crystal
The optical Limiting of short pulse acts on.In photonic crystal band adjacent edges, nonlinear effect can be such that the forbidden band of photonic crystal moves
It is dynamic, and demonstrating this Nonlinear Mechanism can cause light to propagate and reflect by light intensity.But the one-dimensional photon designed by them
Crystal structure is not obvious the local effect of light, therefore small to the gain effect of light intensity, and non-linear effect is poor, for high light intensity
The optical Limiting unobvious that are played the role of of light wave.
Therefore it needs to design a kind of novel photon crystal structure, keeps optical Limiting effect more obvious.
Invention content
Technical problem to be solved by the invention is to provide a kind of photor crystal laser amplitude limits with nonlinear transmission
Structure can be effectively used in various 1.064 mum wavelength laser limiter systems, and realization declines to the high transmittance of dim light and the height of strong light
Lapse rate.
In order to solve the above technical problems, the technical solution adopted in the present invention is：
A kind of photor crystal laser amplitude limit structure with nonlinear transmission, it is characterised in that：Including dielectric posts and Jie
Matter, dielectric posts in 11 rows 11 row square arrangement and dielectric posts refractive index be 3.1~3.6, dielectric distribution dielectric posts it
Between, medium is air and refractive index is 1, the spacing between adjacent media column be 0.415~0.43 μm, dielectric posts it is a diameter of
0.16~0.175 μm, wherein be located at the dielectric posts vacancy of 1~3,6,9~11 row, the 4th, 8 two arranged in the 6th row dielectric posts
Dielectric posts are constant, and the dielectric posts of the 5th, 7 row use Cole's dielectric posts.
Further, the dielectric posts refractive index is 3.4, and the spacing between adjacent media column is 0.421 μm, dielectric posts
A diameter of 0.165 μm.
Further, the linear refractive index of Cole's dielectric posts is 2.79, and Kerr coefficient magnitude is 10-16W/m2。
Compared with prior art, the present invention haing the following advantages and effect：Compared with traditional sharp optical limiting materials, this hair
Bright flexible design is more stablized compared with liquid physical property, and can realize non-linear light transmittance, can be to Same Wavelength
Incident light is identified.The present invention can be effectively used in the laser limiter system of 1.064 mum wavelengths, realize the high transmission to dim light
The highly attenuating rate of rate and strong light.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of photor crystal laser amplitude limit structure with nonlinear transmission of the present invention.
Wherein：Fig. 1 a are two-dimensional photon crystal structure cross-sectional view, and Fig. 1 b are the enlarged drawing and structural parameters in dashed box.
Fig. 2 be the present invention defect state state under optical mode mode distributions figure.Fig. 2 a are three-dimensional distribution map, and Fig. 2 b are
Corresponding vertical view.
Fig. 3 is the transmitance of the embodiment of the present invention with wavelength change relational graph.
Fig. 4 is the light transmission rate spectrum under different incident power densities of the embodiment of the present invention.
Fig. 5 be the embodiment of the present invention be directed to specific 1.064 mum wavelength, light transmission rate with incident power densities change
Change schematic diagram.
Specific implementation mode
The present invention is described in further detail below in conjunction with the accompanying drawings and by embodiment, and following embodiment is to this hair
Bright explanation and the invention is not limited in following embodiments.
As shown in Figure 1, a kind of photor crystal laser amplitude limit structure with nonlinear transmission of the present invention, photonic crystal
It is made of the silicon dielectric posts of square arrangement, dielectric posts refractive index is 3.4；Surrounding medium is air, refractive index 1；The light
Sub- crystal structure includes 11 row, the 11 row silicon dielectric posts of transverse and longitudinal arrangement, and adjacent media intercolumniation Λ is 0.421 μm, medium column diameter
D is 0.165 μm, is highly 10 μm；Remove the 6th row and arrange dielectric posts as light wave transmissions channel, the row the 1st~3, the 6th, the
9~11 dielectric posts vacancies, are replaced by air；4th, the 8th dielectric posts be silicon dielectric posts；5th, the 7th dielectric posts choosing
Take ZnTe as kerr medium, linear refractive index 2.79, Kerr coefficient 1.25*10-16m2/W。
When incident light wave a length of 1.064 μm and incident power densities are less than 107W/m2When, photon crystal structure can realize height
Percent of pass；As incident power increases, the transmitance of 1.064 mum wavelengths is gradually reduced, when incident optical power density is more than 1012W/
m2When, transmitance is less than 10-7.When incident light wave is 1.064 μm a length of, under low incidence power density, which is placed exactly in scarce
State position is fallen into, there is high transmittance；When incident power densities increase, defect state position is moved, the transmission at 1.064 μm
Rate declines, and reaches the optical Limiting effect under high incident power densities.
For the photor crystal laser amplitude limit structure of the present invention, we use finite element method, in conjunction with finite element fraction
Analysis software COMSOL Multiphysics are emulated, and are added the electromagnetic wave frequency domain physical field in radio-frequency module, are obtained the present invention
The optical mode Field distribution characteristic of structure, and change incident power densities, photonic crystal transmitance is obtained with incident power densities
Variation relation.As shown in Figure 2, it can be seen that defect state mode distributions characteristic of the invention.In photonic crystal defect state propagating mode
In formula, the energy of light wave concentrates on defect state position, and non-linear effect is more apparent.Fig. 3 is that transmitance-wavelength of the present invention closes
System's figure.
As shown in Figure 4, it can be seen that nonlinear characteristic of the invention.It is 1e that we choose incident power densities respectively7W/
m2、3e8W/m2And 1e9W/m2, make transmitance-wavelength relationship figure respectively.As can be seen that with the increase of incident power densities, lack
It falls into state peak value and larger movement occurs, the transmitance of corresponding 1.064 mum wavelengths can decline, be down to 0.19 from 0.91, realize
The effect of non-linear amplitude limit.
As shown in figure 5, by changing incident power densities, transmitance-incident power densities relational graph is obtained.It can see
Go out, when incident light wave a length of 1.064 μm and incident power densities are less than 107W/m2When, photon crystal structure can realize that high light is saturating
Cross rate；When incident optical power density is more than 1012W/m2When, light transmission rate is less than 10-7。
Described in this specification above content is only illustrations made for the present invention.Technology belonging to the present invention
The technical staff in field can do various modifications or supplement to described specific embodiment or substitute by a similar method, only
The guarantor of the present invention should all be belonged to without departing from the content or beyond the scope defined by this claim of description of the invention
Protect range.
Claims (3)
1. a kind of photor crystal laser amplitude limit structure with nonlinear transmission, it is characterised in that：Including dielectric posts and medium,
Dielectric posts in 11 rows 11 row square arrangement and dielectric posts refractive index be 3.1~3.6, dielectric distribution between dielectric posts,
Medium is air and refractive index is 1, the spacing between adjacent media column be 0.415~0.43 μm, dielectric posts it is a diameter of
0.16~0.175 μm, wherein be located at the dielectric posts vacancy of 1~3,6,9~11 row, the 4th, 8 two arranged in the 6th row dielectric posts
Dielectric posts are constant, and the dielectric posts of the 5th, 7 row use Cole's dielectric posts.
2. a kind of photor crystal laser amplitude limit structure with nonlinear transmission described in accordance with the claim 1, feature exist
In：The dielectric posts refractive index is 3.4, and the spacing between adjacent media column is 0.421 μm, a diameter of 0.165 μm of dielectric posts.
3. a kind of photor crystal laser amplitude limit structure with nonlinear transmission described in accordance with the claim 1, feature exist
In：The linear refractive index of Cole's dielectric posts is 2.79, and Kerr coefficient magnitude is 10-16W/m2。
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| CN201810329957.9A CN108519633B (en) | 2018-04-13 | 2018-04-13 | A kind of photor crystal laser clipping structure with nonlinear transmission |
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| CN201810329957.9A CN108519633B (en) | 2018-04-13 | 2018-04-13 | A kind of photor crystal laser clipping structure with nonlinear transmission |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1971395A (en) * | 2006-12-13 | 2007-05-30 | 中国科学院光电技术研究所 | A manufacturing method of optical limiter of photon crystal |
| US7854505B2 (en) * | 2006-03-15 | 2010-12-21 | The Board Of Trustees Of The University Of Illinois | Passive and active photonic crystal structures and devices |
-
2018
- 2018-04-13 CN CN201810329957.9A patent/CN108519633B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7854505B2 (en) * | 2006-03-15 | 2010-12-21 | The Board Of Trustees Of The University Of Illinois | Passive and active photonic crystal structures and devices |
| CN1971395A (en) * | 2006-12-13 | 2007-05-30 | 中国科学院光电技术研究所 | A manufacturing method of optical limiter of photon crystal |
Non-Patent Citations (4)
| Title |
|---|
| A.CICEK,B.ULUG: "《Influence of Kerr nonlinearity on the band structures of two-dimensional photonic crystals》", 《OPTICS COMMUNICATIONS》 * |
| DARIO GERACE,GABRIEL LOZANO: "《Optical limiter based on two-dimensional nonlinear photonic crystals》", 《SPIE PROCEEDINGS》 * |
| IGOR GURYEV,IGOR SUKHOIVANOV: "《Characterization and Optimization of Photonic Crystal Optical Power Limiters》", 《JOURNAL OF ELECTROMAGNETIC ANALYSIS AND APPLICATIONS》 * |
| M.BAHL,N.C.PANOIU: "《Nonlinear optical effects in a two-dimensional photonic crystal containing one-dimensional kerr defects》", 《PHYSICAL REVIEW》 * |
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