CN108513680A - Sensing chip protects structure and sensing chip to protect construction manufacturing method - Google Patents
Sensing chip protects structure and sensing chip to protect construction manufacturing method Download PDFInfo
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- CN108513680A CN108513680A CN201780006012.7A CN201780006012A CN108513680A CN 108513680 A CN108513680 A CN 108513680A CN 201780006012 A CN201780006012 A CN 201780006012A CN 108513680 A CN108513680 A CN 108513680A
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- sensing chip
- film
- lamina
- lamella
- potted element
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000010276 construction Methods 0.000 title claims abstract description 9
- 241000446313 Lamella Species 0.000 claims abstract description 64
- 239000010408 film Substances 0.000 claims description 131
- 238000000034 method Methods 0.000 claims description 57
- 239000010409 thin film Substances 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 5
- 241000761557 Lamina Species 0.000 claims description 3
- 238000005299 abrasion Methods 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 9
- 239000002216 antistatic agent Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000009881 electrostatic interaction Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1329—Protecting the fingerprint sensor against damage caused by the finger
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
A kind of sensing chip protection structure of the application offer and sensing chip protect construction manufacturing method; it includes sensing chip, potted element and the first film lamella that the sensing chip, which protects structure; wherein; the potted element, which contains, encapsulates the sensing chip in the potted element, which is fitted in the potted element upper surface and the potted element upper surface is covered by the first film lamella completely.Above-mentioned sensing chip protection structure can reduce the probability that sensing chip damages caused by mechanism, avoid abrasion of the external force to sensing chip, be effectively protected sensing chip, improve the service life of sensing chip.
Description
Technical field
The invention relates to sensing chip technical fields, and more particularly, to sensing chip protection structure and
Sensing chip protects construction manufacturing method.
Background technology
With the development of technology, the size of sensing chip is also smaller and smaller.Therefore, more and more electronic products (such as
Mobile phone, tablet computer etc.) in built-in sensing chip.Further, since the difference of purposes, some sensing chips need to make appearance knot
Component.Current sensing chip does not carry out any processing, and hardness and abrasion resistance be not high.Therefore sensing core cannot be effectively protected
Piece so that sensing chip is easy because that electrostatic interaction and mechanism lead to damage is entirely ineffective.
Therefore, how sensing chip is preferably protected, the service life for improving sensing chip is a urgent problem to be solved.
Invention content
In a first aspect, the embodiment of the present application provides a kind of sensing chip protection structure, sensing chip protection structure includes
Sensing chip, potted element and the first film lamella, wherein the potted element, which contains, encapsulates the sensing chip in the potted element
Interior, which is fitted in the potted element upper surface and the potted element upper surface is completely by the first film lamella
Covering.
With reference to first aspect, in the first possible realization method of first aspect, which protects structure also
Including the second film lamina, which is fitted in the sensing chip upper surface and the sensing chip upper surface quilt completely
Second film lamina covers.
The possible realization method of with reference to first aspect the first, in second of possible realization method of first aspect
In, the first film lamella and second film lamina are the film lamina with anti-static function.
Second of possible realization method with reference to first aspect, in the third possible realization method of first aspect
In, the surface resistivity of the first film lamella and second film lamina is less than 1011Ohm.
In the possible realization method of with reference to first aspect the first to the third possible realization method of first aspect
Any possible realization method, in the 4th kind of possible realization method of first aspect, the first film lamella and should
Second film lamina is resinous coat or optical thin film.
In the possible realization method of with reference to first aspect the first to the 4th kind of possible realization method of first aspect
Any possible realization method, in the 5th kind of possible realization method of first aspect, the first film lamella and should
The thickness of second film lamina is greater than or equal to 1 nanometer and is less than or equal to 1000 microns.
With reference to first aspect, in the 6th kind of possible realization method of first aspect, the first film lamella be with
The film lamina of anti-static function.
With reference to first aspect or the 6th kind of possible realization method of first aspect, the 7th kind in first aspect are possible
In realization method, the surface resistivity of the first film lamella is less than 1011Ohm.
With reference to first aspect, the 7th kind of the 6th kind of possible realization method of first aspect or first aspect it is possible
Realization method, in the 8th kind of possible realization method of first aspect, which is resinous coat or optically thin
Film.
With reference to first aspect, the 6th kind of possible realization method of first aspect to first aspect the 8th kind of possible reality
The possible realization method of any one of existing mode, in the 9th kind of possible realization method of first aspect, the first film
Lamellar spacing is greater than or equal to 1 nanometer and is less than or equal to 1000 microns.
Second aspect, the embodiment of the present application provide a kind of sensing chip protection construction manufacturing method, sensing chip protection
Structure includes that sensing chip, potted element and the first film lamella, this method include：Contain and encapsulates the sensing chip in the encapsulation
In element；Make the first film lamella in the potted element upper surface, wherein the potted element upper surface completely by this first
Film lamina covers.
In conjunction with second aspect, in the first possible realization method of second aspect, which protects structure also
Including the second film lamina, this method further includes：Second film lamina, the wherein sensing are made in the sensing chip upper surface
Chip upper surface is covered by second film lamina completely.
In conjunction with the first possible realization method of second aspect, in second of possible realization method of second aspect
In, the first film lamella and second film lamina are the film lamina with anti-static function.
In conjunction with second of possible realization method of second aspect, in the third possible realization method of second aspect
In, the surface resistivity of the first film lamella and second film lamina is less than 1011Ohm.
In the first possible realization method to the third possible realization method of second aspect in conjunction with second aspect
Any possible realization method, in the 4th kind of possible realization method of second aspect, the first film lamella and should
Second film lamina is resinous coat or optical thin film.
In the first possible realization method to the 4th kind of possible realization method of second aspect in conjunction with second aspect
Any possible realization method, in the 5th kind of possible realization method of second aspect, the first film lamella and should
The thickness of second film lamina is greater than or equal to 1 nanometer and is less than or equal to 1000 microns.
In conjunction with second aspect, in the 6th kind of possible realization method of second aspect, the first film lamella be with
The film lamina of anti-static function.
In conjunction with the 6th kind of possible realization method of second aspect or second aspect, the 7th kind in second aspect is possible
In realization method, the surface resistivity of the first film lamella is less than 1011Ohm.
The 7th kind in conjunction with second aspect, the 6th kind of possible realization method of second aspect or second aspect is possible
Realization method, in the 8th kind of possible realization method of first aspect, which is resinous coat or optically thin
Film.
In conjunction with second aspect, second aspect the 6th kind of possible realization method to second aspect the 8th kind of possible reality
The possible realization method of any one of existing mode, in the 9th kind of possible realization method of first aspect, the first film
Lamellar spacing is greater than or equal to 1 nanometer and is less than or equal to 1000 microns.
Above-mentioned sensing chip protection structure can reduce the probability that sensing chip damages caused by mechanism, avoid outer
Abrasion of the power to sensing chip, is effectively protected sensing chip, improves the service life of sensing chip.
Description of the drawings
Fig. 1 is according to a kind of schematic diagram of sensing chip protection structure provided by the embodiments of the present application.
Fig. 2 is the schematic diagram that structure is protected according to another sensing chip provided by the embodiments of the present application.
Fig. 3 is to provide the schematic flow chart that sensing chip protects construction manufacturing method according to the embodiment of the present application.
Specific implementation mode
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application is described.
Fig. 1 is according to a kind of schematic diagram of sensing chip protection structure provided by the embodiments of the present application.Biography as shown in Figure 1
Sense chip protection structure 100 include：Sensing chip 101, potted element 102 and the first film lamella 103.
As shown in Figure 1, potted element 102 contains encapsulation sensing chip 101 in potted element 102.The first film lamella
103 are fitted in 102 upper surface of potted element and 102 upper surface of potted element is covered by the first film lamella 103 completely.
Due to thering is the protection of the first film lamella 103 and potted element 102, external force not to act directly on sensing chip
On 101.Therefore, sensing chip 101 has certain impact strength and toughness, so as to reduce caused by mechanism
The probability that sensing chip 101 damages.In addition, if sensing chip 101 makes surface structure part, sensing chip 101 will not with it is outer
Boundary is in direct contact.Abrasion that in this way can be to avoid external force to sensing chip 101.In conclusion sensing chip as shown in Figure 1 is protected
Protection structure 100 can be effectively protected sensing chip, improve the service life of sensing chip.
The lower surface of sensing chip 101 as shown in Figure 1 can be fixed on by connecting material on substrate.The connecting material
Main component can be with epoxy resin, neat silicone etc...
102 upper surface of potted element and the first film lamella 103 can be rectangles as shown in Figure 1, can also be other
Shape, such as round, ellipse or other shapes, the embodiment of the present application do not limit this.As long as ensureing the first film piece
The upper surface of potted element 102 can be completely covered in layer 103.The main component of potted element 102 can be epoxy resin
With alundum (Al2O3) etc., the embodiment of the present application does not limit this.
Optionally, in some embodiments, the first film lamella 103 is the film lamina with anti-static function.In this way,
It can be to avoid sensing chip 101 due to failing caused by electrostatic interaction, so as to improve the service life of sensing chip.
Further, the surface resistivity of the first film lamella 103 is less than 1011Ohm.
Optionally, in some embodiments, the first film lamella 103 can be resinous coat.Further, the first film piece
Layer 103 can be one or more layers resinous coat.In further embodiments, the first film lamella 103 can be optical thin film.
Further, the first film lamella 103 can be one or more layers optical thin film.
For example, resin can be made to form one layer in 102 upper surface of potted element by techniques such as silk-screen, spraying, spin coatings
Or multi-layer resinous coating.Anti-static material can be added in the resin.The anti-static material can be antistatic agent or antistatic
Coating.Optionally, in some embodiments, which can be active material.It therefore can be in potted element 102
Upper surface generates hydrophilic radical.Water is high-k, therefore the first film lamella 103 has antistatic property.Optionally, exist
In other embodiments, different resist can be obtained according to the difference of the anti-static material adding proportion and arranged distribution
Static behaviour and different mechanical impact resistances.The anti-static material can be metal powder, oxide particle, nano-particle or fibre
Dimension.The anti-static material diameter is at 10 microns or less.Distribution of the anti-static material in resin can be continuous or
Disconnected, as long as electrostatic charge can be made to have an effect under the electric field.The distance of effect is determined by material property.Charge is at this
Transition occurs between anti-static material or conduction is distributed to 102 periphery of potted element.
For another example, substrate can be done with potted element 102 by physical vapour deposition (PVD) or chemical vapor deposition, in encapsulation member
The upper surface of part 102 deposits one or more layers optical thin film.The thickness of every layer of optical thin film can be that tens nanometers or hundreds of are micro-
Rice.The material of the optical thin film can be silicon carbide, aluminium oxide, copper oxide, titanium dioxide etc., with optical film thickness increasing
Add, which can be gradually changed by atomic deposition from island film-reticulated film-continuous film, and resistivity is with meeting
In conductor, semiconductor and insulator range, while different impact strength and toughness can also be obtained.Further accordance with envelope
Element 102 material difference is filled, the performance parameter under same thickness also differs.It is finally arranged in pairs or groups and is verified according to each parameter, determine the
The parameters such as material, the thickness of one film lamina 103 are so that the surface resistivity of the first film lamella 103 is less than 1011Ohm.
Optionally, in some embodiments, the thickness of the first film lamella 103 is more than 1 nanometer and is less than or equal to 1000
Micron.
Optionally, in some embodiments, sensing chip 101 can be fingerprint sensor.
Fig. 2 is the schematic diagram that structure is protected according to another sensing chip provided by the embodiments of the present application.Biography as shown in Figure 2
Sense chip protection structure 200 include：Sensing chip 201, potted element 202 and the first film lamella 203 and the second film lamina
204。
As shown in Fig. 2, potted element 202 contains encapsulation sensing chip 201 in potted element 202.The first film lamella
203 are fitted in 202 upper surface of potted element and 202 upper surface of potted element is covered by the first film lamella 203 completely.Second is thin
Membrane layer 204 is fitted in 201 upper surface of sensing chip and 201 upper surface of sensing chip and is covered completely by the second film lamina 203.
Due to having the protection of the first film lamella 203, the second film lamina 204 and potted element 202, external force will not be direct
It acts on sensing chip 201.Therefore, sensing chip 201 have certain impact strength and toughness, so as to reduce because
The probability that sensing chip 201 caused by mechanism damages.In addition, if sensing chip 201 makes surface structure part, sensing chip
201 will not be in direct contact with the external world.Abrasion that in this way can be to avoid external force to sensing chip 201.In conclusion such as Fig. 2 institutes
The sensing chip protection structure 200 shown can be effectively protected sensing chip, improve the service life of sensing chip.
The lower surface of sensing chip 201 as shown in Figure 2 can be fixed on by connecting material on substrate.The connecting material
Main component can be with epoxy resin, neat silicone etc...
202 upper surface of potted element and the first film lamella 203 can be rectangles as shown in Figure 2, can also be other
Shape, such as round, ellipse or other shapes, the embodiment of the present application do not limit this.As long as ensureing the first film piece
The upper surface of potted element 202 can be completely covered in layer 203.The main component of potted element 202 can be epoxy resin
With alundum (Al2O3) etc., the embodiment of the present application does not limit this.
The connecting material can be crystal-bonding adhesive etc..
202 upper surface of potted element and the first film lamella 203 can be rectangles as shown in Figure 2, can also be other
Shape, such as round, ellipse or other shapes, the embodiment of the present application do not limit this.As long as ensureing the first film piece
The upper surface of potted element 202 can be completely covered in layer 203.
Similar, 201 upper surface of sensing chip and the second film lamina 204 can be rectangles as shown in Figure 2, can also
It is other shapes, such as round, ellipse or other shapes, the embodiment of the present application do not limit this.As long as ensureing second
The upper surface of sensing chip 201 can be completely covered in film lamina 204.The main component of potted element 204 can be ring
Oxygen resin and alundum (Al2O3) etc., the embodiment of the present application does not limit this.
Optionally, in some embodiments, the first film lamella 203 and the second film lamina 204 are with antistatic work(
The film lamina of energy.This way it is possible to avoid sensing chip 201 due to failing caused by electrostatic interaction, senses so as to improve
The service life of chip.
Further, the surface resistivity of the first film lamella 203 and the second film lamina 204 is less than 1011Ohm.
Optionally, in some embodiments, the first film lamella 203 can be resinous coat or optical thin film.
Similar, in some embodiments, the second film lamina 204 can be resinous coat or optical thin film.
Structure, characteristic and production method of the first film lamella 203 and the second film lamina 204 etc. can with shown in Fig. 1
Sensing chip protection structure 100 in the first film lamella 103 it is identical, need not just repeat herein.It is understood that first
Film lamina 203 and the second film lamina 204 can be different.It is applied for example, the first film lamella 203 can be resin
Layer, which can be optical thin film.
Optionally, in some embodiments, the thickness of the first film lamella 203 and the second film lamina 204 is more than 1 nanometer
And it is less than or equal to 1000 microns.
Optionally, in some embodiments, sensing chip 201 can be fingerprint sensor.
Optionally, in further embodiments, sensing chip protection structure can only include sensing chip as shown in Figure 2
201, potted element 202 and the second film lamina 204.
Fig. 3 is to provide the schematic flow chart that sensing chip protects construction manufacturing method according to the embodiment of the present application.The biography
It includes sensing chip, potted element and the first film lamella that sense chip, which protects structure,.
301, contain and encapsulates the sensing chip in the potted element.
302, make the first film lamella in the potted element upper surface, wherein the potted element upper surface completely by this
One film lamina covers.
Due to thering is the protection of the first film lamella and potted element, external force not to act directly on sensing chip.Therefore,
Sensing chip has certain impact strength and toughness, so as to reduce the sensing chip damage caused by mechanism
Probability.In addition, if sensing chip makes surface structure part, sensing core will not be in direct contact with the external world.It in this way can be to avoid outer
Abrasion of the power to sensing chip.In conclusion the sensing chip protection structure that method makes as shown in Figure 3 can be effectively protected
Sensing chip improves the service life of sensing chip.
Optionally, in some embodiments, sensing chip protection structure further includes the second film lamina.This method may be used also
To include：Make second film lamina in the sensing chip upper surface, wherein the sensing chip upper surface completely by this second
Film lamina covers.
Increase the second film lamina protection sensing chip again on the basis of the first film lamella.It therefore can be further
It improves to sensing chip, improves the service life of sensing chip.
Shape, structure, characteristic and the production method etc. of the first film lamella and second film lamina may refer to Fig. 1
Shown in sensing chip protection structure 100 in the description as described in the first film lamella 103, need not just repeat herein.It can manage
Solution, the first film lamella and the second film lamina can be different.It is applied for example, the first film lamella can be resin
Layer, which can be optical thin film.
Optionally, in some embodiments, sensing chip protection structure can only include sensing chip, potted element and the
Two film laminas, sensing chip protection construction manufacturing method may include：Contain and encapsulates the sensing chip in the potted element；
Second film lamina is made in the sensing chip upper surface, wherein the sensing chip upper surface is completely by second film lamina
Covering.In other words, the first film lamella need not can be made in protection structure upper surface in this method.
The above, the only specific implementation mode of the application, but the protection domain of the application is not limited thereto, it is any
Those familiar with the art in the technical scope that the application discloses, all answer by the change or replacement that can be readily occurred in
Cover within the protection domain of the application, therefore the protection domain of the application should be subject to the protection scope in claims.
Claims (12)
1. a kind of sensing chip protects structure, which is characterized in that the sensing chip protection structure includes sensing chip, encapsulation member
Part and the first film lamella, wherein the potted element, which contains, encapsulates the sensing chip in the potted element, and described the
One film lamina is fitted in the potted element upper surface and the potted element upper surface is completely by the first film lamella
Covering.
2. sensing chip as described in claim 1 protects structure, which is characterized in that the sensing chip protection structure further includes
Second film lamina, it is complete that second film lamina is fitted in the sensing chip upper surface and the sensing chip upper surface
It is covered by second film lamina.
3. sensing chip as claimed in claim 2 protects structure, which is characterized in that the first film lamella and described second
Film lamina is the film lamina with anti-static function.
4. sensing chip as claimed in claim 3 protects structure, which is characterized in that the first film lamella and described second
The surface resistivity of film lamina is less than 1011Ohm.
5. the sensing chip as described in any one of claim 2 to 4 protects structure, which is characterized in that the first film piece
Layer and second film lamina are resinous coat or optical thin film.
6. the sensing chip as described in any one of claim 3 to 5 protects structure, which is characterized in that the first film piece
The thickness of layer and second film lamina is greater than or equal to 1 nanometer and is less than or equal to 1000 microns.
7. a kind of sensing chip protects construction manufacturing method, which is characterized in that the sensing chip protection structure includes sensing core
Piece, potted element and the first film lamella, the method includes：
Contain and encapsulates the sensing chip in the potted element；
The first film lamella is made in the potted element upper surface, wherein the potted element upper surface is completely described
The first film lamella covers.
8. the method for claim 7, which is characterized in that the sensing chip protection structure further includes the second diaphragm
Layer, the method further include：
Second film lamina is made in the sensing chip upper surface, wherein the sensing chip upper surface is completely described
Second film lamina covers.
9. method as claimed in claim 8, which is characterized in that the first film lamella and second film lamina are tool
There is the film lamina of anti-static function.
10. method as claimed in claim 9, which is characterized in that the first film lamella and second film lamina
Surface resistivity is less than 1011Ohm.
11. the method as described in any one of claim 8 to 10, which is characterized in that the first film lamella and described
Two film laminas are resinous coat or optical thin film.
12. the method as described in any one of claim 8 to 11, which is characterized in that the first film lamella and described
The thickness of two film laminas is greater than or equal to 1 nanometer and is less than or equal to 1000 microns.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/077811 WO2018170814A1 (en) | 2017-03-23 | 2017-03-23 | Sensing chip protection structure, and method for manufacturing sensing chip protection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108513680A true CN108513680A (en) | 2018-09-07 |
Family
ID=63374762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780006012.7A Pending CN108513680A (en) | 2017-03-23 | 2017-03-23 | Sensing chip protects structure and sensing chip to protect construction manufacturing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108513680A (en) |
| WO (1) | WO2018170814A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205428898U (en) * | 2015-08-28 | 2016-08-03 | 深圳市汇顶科技股份有限公司 | Packaging structure of sensing chip and protection architecture on surface thereof |
| CN106206481A (en) * | 2016-05-05 | 2016-12-07 | 深圳信炜科技有限公司 | Bio-identification module and preparation method thereof, electronic equipment |
| CN207052590U (en) * | 2017-03-23 | 2018-02-27 | 深圳市汇顶科技股份有限公司 | Sensing chip protection structure |
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| CN205942737U (en) * | 2015-03-09 | 2017-02-08 | 韩国科泰高科株式会社 | Fingerprint sensor packaging part |
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| CN205428898U (en) * | 2015-08-28 | 2016-08-03 | 深圳市汇顶科技股份有限公司 | Packaging structure of sensing chip and protection architecture on surface thereof |
| CN106206481A (en) * | 2016-05-05 | 2016-12-07 | 深圳信炜科技有限公司 | Bio-identification module and preparation method thereof, electronic equipment |
| CN207052590U (en) * | 2017-03-23 | 2018-02-27 | 深圳市汇顶科技股份有限公司 | Sensing chip protection structure |
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