CN108511619A - OLED alignment marks, flexible OLED display panel and forming method thereof - Google Patents
OLED alignment marks, flexible OLED display panel and forming method thereof Download PDFInfo
- Publication number
- CN108511619A CN108511619A CN201710101449.0A CN201710101449A CN108511619A CN 108511619 A CN108511619 A CN 108511619A CN 201710101449 A CN201710101449 A CN 201710101449A CN 108511619 A CN108511619 A CN 108511619A
- Authority
- CN
- China
- Prior art keywords
- layer
- alignment mark
- oled
- substrate
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of OLED alignment marks, flexible OLED display panel and forming method thereof.The OLED alignment marks, including a material layer, the material layer are more than 50% in visible light wave range internal reflection rate, contraposition chance of success can be improved.In addition, the presumptive area visible light wave range internal transmission factor on OLED alignment marks periphery is more than 50%.The contrast of alignment mark and neighboring area can be improved in such combination, further increases contraposition chance of success.
Description
Technical field
The invention belongs to display technology fields, and in particular to a kind of OLED alignment marks, flexible OLED display panel and its
Forming method.
Background technology
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) is active luminescent device.With biography
The LCD (Liquid Crystal Display, liquid crystal display) of system is compared, and OLED display technologies are not necessarily to backlight, is had certainly
Luminous characteristic.OLED use relatively thin organic material film laye and glass substrate, when have electric current by when, organic material will be sent out
Light.Therefore OLED display panel can save significantly on electric energy, can be made lighter and thinner, and wider model is resistant to than LCD display panel
The temperature change enclosed, and visible angle bigger.OLED display panel is expected to become the next-generation FPD skill after LCD
Art is most one of technology that attracts attention in current flat panel display.
There are many kind, the present more mature and volume production that succeeded OLED colorization skills for the colorization method of OLED screen body
Art is mainly OLED evaporation coating techniques.Specifically, penetrating fine metal mask version (Fine Metal using evaporation film-forming technology
Mask, FMM) corresponding location of pixels forms organic light emitting component on array (array) substrate, and the fine metal is covered
Film version is often referred to simply as metal mask version or vapor deposition mask plate.When using evaporation process, the corner location of mask plate need to will be deposited
On alignment mark aligned with the alignment mark on array substrate corner locations, just can guarantee in this way array substrates just
The true upper corresponding film layer of position vapor deposition.
Allow display panel that can have become the development trend of the screen of the following various intelligent uses with free bend.With tradition
Rigid display panel compare, flexible display panels have many advantages, such as, such as impact resistance, and shock resistance is strong, light-weight, volume
It is small, it carries more convenient etc..Using materials such as plastics, polyester film or films as substrate, oled panel can accomplish it is thinner,
It can even be folded or rolled up, it can be achieved that flexible soft screen is shown and flexible light source.
However, it is found by the inventors that since flexible project is carried out, it is frequently present of the abnormal phenomenon of OLED contrapositions, has caused to steam
Plating is inaccurate, and then it is bad to cause display base plate to show.
Invention content
The object of the present invention is to provide a kind of OLED alignment marks that aligning accuracy is high, flexible OLED display panel and
Its forming method.
In order to solve the above technical problems, the present invention provides a kind of OLED alignment marks, including a material layer, the material layer
It is more than 50% in visible light wave range internal reflection rate.
Optionally, in the OLED alignment marks, the material layer is Mo/Al/Mo laminated films, Ti/Al/Ti multiple
Close film, Mo/Cu/Mo laminated films or Ti/Cu/Ti laminated films.The material layer is the metal layer (example of OLED display panel
Second metal layer in this way), the thickness of the metal layer is 500nm~800nm.
Optionally, further include the anode film being located on the material layer in the OLED alignment marks, it is described
The thickness of anode film is 100nm~300nm.The anode film is ITO/Ag/ITO laminated films.
Optionally, the OLED alignment marks are formed on the alignment mark region of substrate, and the substrate further includes contraposition
Neighboring area, the alignment mark neighboring area visible light wave range internal transmission factor is marked to be more than 50%.
The present invention also provides a kind of flexible OLED display panel, including a substrate, the substrate include alignment mark region,
Alignment mark neighboring area and other regions, the alignment mark region are formed with OLED alignment marks as described above.
Optionally, in the flexible OLED display panel, the thickness of the alignment mark neighboring area is more than 10.45
μm, the alignment mark neighboring area visible light wave range internal transmission factor is more than 50%.
Optionally, further include being formed in the alignment mark region and right in the flexible OLED display panel
The barrier layer of position label neighboring area, the material layer are formed on the barrier layer in the alignment mark region, the substrate
Thickness is more than 10 μm, and the thickness on the barrier layer is 450nm~1000nm.
The present invention more provides a kind of forming method of flexible OLED display panel, including:
A substrate is provided, the substrate includes alignment mark region, alignment mark neighboring area and other regions；
Form barrier layer, active layer, gate insulation layer, the first metal layer, interlayer insulating film, second on the substrate successively
Metal layer, passivation layer, planarization layer and anode film；
Wherein, at least retain second metal layer on the alignment mark region.
Optionally, in the forming method of the flexible OLED display panel, also retain on the alignment mark region
Anode film and barrier layer, the alignment mark neighboring area only retain barrier layer.
Compared with prior art, OLED alignment marks provided by the invention use and are more than in visible light wave range internal reflection rate
Contraposition chance of success can be improved in 50% material.In addition, the presumptive area visible light wave range on OLED alignment marks periphery
Internal transmission factor is more than 50%.The contrast of alignment mark and neighboring area can be improved in such combination, further increases pair
Position chance of success.
Description of the drawings
Fig. 1 is the contraposition principle schematic of OLED alignment marks in one embodiment of the invention；
Fig. 2 is the schematic diagram of flexible OLED display panel in one embodiment of the invention.
Specific implementation mode
As described in the background section, when being aligned using existing OLED alignment marks, it is abnormal often to there is contraposition.
As shown in Figure 1, applicant passes through the reflection the study found that OLED contraposition chance of success and the alignment mark (Mark) 2 on substrate 1
Rate is directly proportional, and directly proportional to the transmitance of substrate on 2 periphery of alignment mark, that is, the more high then substrate of the reflectivity of alignment mark 2
Alignment mark 2 and the contraposition chance of success of the alignment mark 3 on vapor deposition mask plate on 1 is higher, equally, 2 periphery of alignment mark
Substrate transmitance more high then substrate 1 on alignment mark 2 and the alignment mark 3 on vapor deposition mask plate contraposition chance of success
It is higher, it just can guarantee upper corresponding film layer is deposited in 1 correct position of substrate in this way.Based on the studies above, the present invention provides one
Kind OLED alignment marks, including a material layer, the material layer are more than 50% in visible light wave range internal reflection rate, can carry in this way
Height contraposition chance of success.In order to further increase contraposition chance of success, the presumptive area on OLED alignment marks periphery is visible
Light wave range internal transmission factor is more than 50%.The contrast of alignment mark and its neighboring area can be improved in such combination, right
Position is better.Here, visible light wave range refers to the wave-length coverage of 380nm to 800nm；Visible reflectance refers to visible
In spectrum (380nm~800nm) range, substrate surface reflection visible light and penetrate the ratio in total visible light of substrate surface
Rate；Transmission of visible light refer in visible spectrum (380nm~800nm) range, through substrate visible light and penetrate in substrate
The ratio of total visible light on surface.
As shown in Fig. 2, the present invention also provides a kind of flexible OLED display panel, including a substrate 100, the substrate 100
Including alignment mark region 101, alignment mark neighboring area 102 and other region (not shown)s, the alignment mark
Region 101 is formed with the OLED alignment marks.The substrate 100 is, for example, flexible base board, a preferably polyimides (PI)
Substrate.The thickness of the substrate 100 is 10 μm~20 μm, e.g. 12 μm~18 μm.The shape of the flexible base board can be flat
Face, curved surface or other irregular shapes.It should be understood that the material and shape of the substrate are not limited herein.But, when
When the substrate is polyimide substrate, the effect which improves contraposition is particularly evident.
The material layer is, for example, the second metal layer (being also known as Source and drain metal level) employed in OLED manufacture crafts
130, the thickness of the second metal layer is 500nm~800nm.This is because in OLED manufacture crafts, second metal layer 130
The monofilm of generally use aluminium (Al) or copper (Cu), or the laminated film comprising aluminium or copper.Experiment is found, using the second gold medal
Belong to layer as the material layer, the reflectivity of alignment mark is preferable, is conducive to align successfully.Reference table 1 the experiment has found that metal
The reflectivity of aluminium and metallic copper is performed well, and in contrast, metallic aluminium is more suitable for used in the wave-length coverage of 500nm or so.
Table 1
In view of Al is easy the characteristic of diffusion, second metal layer 130 preferably uses the laminated film of Mo/Al/Mo, thin in Al
The upper and lower of film are respectively formed Mo films, can not only Al be prevented to spread, and can also reduce Al films in the subsequent process
Since high temperature forms the probability of raised (Hillock).Certainly, the Mo films also can be replaced Ti films, correspondingly, described
Two metal layers 130 use the complex thin film structure of Ti/Al/Ti.Alternatively, the Al films can be replaced Cu films, correspondingly, institute
State complex thin film structure of the second metal layer 130 using Mo/Cu/Mo.Again alternatively, the second metal layer 130 uses Ti/Cu/
The complex thin film structure of Ti.The overall thickness of second metal layer 130 is, for example, 500nm~800nm, for example, 550nm, 600nm,
650nm, 700nm, 750nm, wherein the respective thickness of upper layer and lower layer Mo films is for example between 20nm~50nm.In order to improve
The transmitance of the presumptive area on OLED alignment marks periphery, by the second metal layer on the alignment mark region 101 of substrate 100
130 remain as OLED alignment marks, and the second metal layer on alignment mark neighboring area 102 is removed.
As a unrestricted example, the alignment mark region 101 further includes being located on second metal layer 130
Anode film 150.The anode film is, for example, the laminated film of ITO/Ag/ITO.The thickness of the anode film 150 is
100nm~300nm, e.g. 140nm, 190nm, 240nm etc..Why by the sun on the alignment mark region 101 of substrate 100
Very thin films retain, this is because in OLED manufacture crafts, if the anode film on removal alignment mark region 101 is easy to
Second metal layer 130 below is influenced, this is because etching when removal anode film in used wet-etching technology
Liquid is easy to damage second metal layer 130, therefore in preferred embodiment, selection retains the anode film in the region, and it is thin to retain anode
The reflectivity of the alignment mark of film is higher, the study found that the contraposition chance of success using this alignment mark has compared with the prior art
It greatly improves.
The OLED alignment marks and preparation method thereof that the present embodiment proposes are described in further detail below in conjunction with Fig. 2,
Here, constituting alignment mark using second metal layer (M2).So-called photoetching process includes photoresist coating, covers in illustrating below
The techniques such as mould, exposure, etching and photoresist lift off, photoresist is by taking positive photoresist as an example.According to following explanation and claim
Book, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-essence
Accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
First, a substrate 100 is provided, the substrate 100 includes alignment mark region 101, alignment mark neighboring area 102
And other region (not shown)s.The alignment mark region 101 is used to form OLED alignment marks.The alignment mark
Neighboring area 102 and other regions are used to form the structures such as thin film transistor (TFT), capacitance and signal wire.Wherein, alignment mark
Neighboring area 102 surrounds alignment mark region 101, the area in addition to alignment mark region 101, alignment mark neighboring area 102
Domain may be collectively referred to as other regions.In the present embodiment, alignment mark region 101 is rounded, a diameter of 200 μm~400 μm；It is right
Position label neighboring area 102 is square, and its side length is 4mm~6mm.OLED alignment marks region 101 is distributed in substrate
Four angles on, certainly, also only can arrange the OLED alignment marks on two opposite angles of substrate, it is same that contraposition can be achieved
Purpose.Also, the shape of OLED alignment marks is not limited to circle, can also be other shapes, such as rectangular.Here, contraposition
The shape and area of label neighboring area 102 are by OLED alignment marks (alignment mark i.e. in array substrate) and vapor deposition register guide
Note (i.e. be deposited mask plate on alignment mark) shape and area determine, the present invention not limit, can according to contraposition demand into
Row adjustment.
Then, barrier layer 110 is formed on the substrate 100.The thickness of the substrate 100 is more than 10 μm, preferably 10 μ
M~20 μm, more preferably 12 μm~18 μm.The overall thickness on the barrier layer 110 is 450nm~1000nm.For example, working as the base
When plate 100 is using single layer polyimides, the barrier layer 110 preferably uses SiOx/SiNx/SiOx/SiNx/SiOxLaminated film
Structure, you can utilize silica (SiOx) ensure preferable stress effect, and using silicon nitride (SiNx) compactness ensure
Preferable isolation effect.The SiOx/SiNx/SiOx/SiNx/SiOxComplex thin film structure in, thickness be followed successively by 300nm~
400nm, 50nm~150nm, 50nm~150nm, 20nm~100nm, 50nm~150nm.When the substrate 100 is using double-deck poly-
When acid imide, the barrier layer 110 preferably uses SiOx/SiNx/SiOxComplex thin film structure, can be dropped compared to five-layer structure
Low cost.Certainly, above-mentioned barrier layer is not limited to three layers or five-layer structure, can also be one layer, two layers or four layers.This step
In rapid, the barrier layer 110 on the alignment mark region 101 and alignment mark neighboring area 102 is retained.
Then, active layer is formed on the substrate 100.Chemical vapor deposition (CVD) technique can be used in the substrate
One amorphous silicon layer of upper formation (a-Si), then use quasi-molecule laser annealing (ELA), solid phase crystallization (SPC) or crystallization inducing metal
(MIC) etc. processes, convert it into polysilicon layer (P-Si).Then, photoetching process is carried out with graphical polysilicon layer, shape
At the active layer of switching transistor and driving transistor.In this step, alignment mark region 101 and alignment mark are at least removed
Polysilicon layer on neighboring area 102.
Then, gate insulation is not formed on the substrate of active layer covering in active layer and using chemical vapor deposition method
Layer.The material that the gate insulation layer uses is, for example, oxide, nitride or oxynitrides, such as TEOS.The gate insulation
The thickness of layer is, for example, 100 thickness~200nm.Then, photoetching process is carried out with graphical gate insulation layer.In this step, at least
Remove the gate insulation layer on alignment mark region 101 and alignment mark neighboring area 102.
Then, the first metal layer (M1), the first metal layer are formed on gate insulation layer using sputtering or evaporation technology
It can be the monofilm of the metals such as molybdenum (Mo).The thickness of the first metal layer is, for example, 400nm~500nm, for example, 420nm,
440nm、460nm、480nm.Then, photoetching process is carried out with the graphical the first metal layer (M1), forms scan line, storage
The bottom crown of capacitance, the grid of power cord, the grid of driving transistor and switching transistor.In this step, at least removal pair
The first metal layer on position marked region 101 and alignment mark neighboring area 102.
Then, interlayer insulating film is formed using chemical vapor deposition method.The material that the interlayer insulating film uses is for example
For oxide, nitride or oxynitrides, for example, silica (SiOx).The interlayer insulating film be, for example, 300nm~
400nm.Then, photoetching process is carried out, forms several vias in the interlayer insulating film.In this step, at least removal contraposition
Interlayer insulating film on marked region 101 and alignment mark neighboring area 102.
Then, second metal layer (M2) 130 is formed on the interlayer insulating film using sputtering or evaporation technology.Second gold medal
Belong to layer 130 and preferably uses aluminium or the monofilm or aluminium of copper or the laminated film of copper.The second metal layer 130 is preferably adopted
With the laminated film of Mo/Al/Mo, the laminated film of Ti/Al/Ti, Mo/Cu/Mo laminated film in it is a kind of.Then, it can carry out
The graphical second metal layer 130 of photoetching process, with formed the source-drain electrode of switching transistor and the source-drain electrode of driving transistor,
Top crown, the data line of storage capacitance.In this step, the second metal layer on alignment mark region 101 is retained, it is utilized
Higher reflectivity improves contraposition chance of success, meanwhile, at least remove the second metal on alignment mark neighboring area 102
Layer.
Then, passivation layer is formed using chemical vapor deposition method.The passivation layer is preferably hydrogeneous dielectric layer, with for
Film layer provides protium below, eliminates dangling bonds, reduces or eliminate the defect of lower section film layer.For example, the passivation layer is
The combination of one or more of hydrogeneous oxide, hydrogeneous nitride, hydrogeneous oxynitrides.The thickness of the passivation layer
Degree is, for example, between 200nm~300nm.Then, photoetching process is carried out, alignment mark region 101 and contraposition are at least removed
Mark the passivation layer on neighboring area 102.
Then, planarization layer is formed using modes such as spin coatings.The planarization layer is, for example, the organic matter with mobility,
For example, polyimides (PI), photoresist (PR).Since the height of different film layers is inconsistent, screen can be made by the planarization layer
Body is flat.The thickness of the planarization layer is, for example, between 1 μm~2 μm.Then, photoetching process is carried out, at least removal contraposition
Planarization layer on marked region 101 and alignment mark neighboring area 102.
Then, anode film 150 is formed.The anode film 150 preferably uses the laminated film of ITO/Ag/ITO, has
Higher work function, and reflectivity and ductility are preferable.In this step, the anode film on alignment mark region 101 is protected
It stays, and the anode film at least on removal alignment mark neighboring area 102.
Then, well known method can be used and form insulated column layer (pillar), organic function layer and cathode thin film, it is described
Organic function layer includes hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electricity successively towards cathode along anode
Sub- implanted layer.Wherein, hole injection layer is adjacent with anode, and electron injecting layer is adjacent with cathode.When applying between anode and cathode
When having external voltage, under the driving of external voltage, by anode injected holes by hole injection layer and hole transmission layer into
Enter in luminescent layer, is entered in luminescent layer by electron injecting layer and electron transfer layer by cathode injected electrons, entered luminous
Hole and electronics in layer are compounded to form exciton in recombination region, and exciton radiation transistion shines and generates luminescence phenomenon, that is, forms electricity
Photoluminescence.
In the present embodiment, alignment mark region 101 only retains barrier layer 110, second metal layer 130 and anode film 150,
Alignment mark neighboring area 102 then only retains barrier layer 110, improves the contrast of alignment mark and neighboring area, contraposition effect
Fruit is preferable.
Experiment is found, uses single layer polyimide substrate, barrier layer 110 to use SiO in substrate 100x/SiNx/SiOx/
SiNx/SiOxLaminated film, second metal layer 130 use Mo/Al/Mo laminated films, anode film 150 to use ITO/Ag/ITO
In the case of laminated film, contraposition success rate is up to 95% or more.
It should be noted that although being using the second metal layer in OLED display panel as OLED alignment marks above
Material layer is illustrated, but in fact, the OLED alignment marks are not limited to use second metal layer, the OLED
Alignment mark also can be used in other OLED manufacture crafts the used satisfactory film of reflectivity, it is same it is compatible with
OLED manufacture crafts and satisfaction contraposition requirement.Also, the OLED display panel is not limited to the double layer of metal of the example above
Layer, can be the metal layer of three-layer metal layer or four layers or more, it is above not to content well known to those skilled in the art into
The excessive description of row, but those skilled in the art should know on the basis of disclosed by the invention.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (11)
1. a kind of OLED alignment marks, which is characterized in that including a material layer, the material layer is in visible light wave range internal reflection
Rate is more than 50%.
2. OLED alignment marks as described in claim 1, which is characterized in that the material layer be Mo/Al/Mo laminated films,
Ti/Al/Ti laminated films, Mo/Cu/Mo laminated films or Ti/Cu/Ti laminated films.
3. OLED alignment marks as described in claim 1, which is characterized in that the material layer is the metal of OLED display panel
The thickness of layer, the metal layer is 500nm~800nm.
4. OLED alignment marks as claimed in claim 3, which is characterized in that further include the anode being located on the material layer
The thickness of film, the anode film is 100nm~300nm.
5. OLED alignment marks as claimed in claim 4, which is characterized in that the anode film is ITO/Ag/ITO THIN COMPOSITEs
Film.
6. OLED alignment marks as described in claim 1, which is characterized in that the OLED alignment marks are formed in pair of substrate
On the marked region of position, the substrate further includes alignment mark neighboring area, the alignment mark neighboring area visible light wave range
Internal transmission factor is more than 50%.
7. a kind of flexibility OLED display panel, including a substrate, the substrate include alignment mark region, alignment mark peripheral region
Domain and other regions, which is characterized in that the alignment mark region is formed just like according to any one of claims 1 to 6
OLED alignment marks.
8. flexibility OLED display panel as claimed in claim 7, which is characterized in that the thickness of the alignment mark neighboring area
More than 10.45 μm, the alignment mark neighboring area visible light wave range internal transmission factor is more than 50%.
9. flexibility OLED display panel as claimed in claim 8, which is characterized in that further include being formed in the alignment mark area
The barrier layer of domain and alignment mark neighboring area, the material layer are formed on the barrier layer in the alignment mark region, institute
The thickness for stating substrate is more than 10 μm, and the thickness on the barrier layer is 450nm~1000nm.
10. a kind of forming method of flexibility OLED display panel, which is characterized in that including:
A substrate is provided, the substrate includes alignment mark region, alignment mark neighboring area and other regions；
Form barrier layer, active layer, gate insulation layer, the first metal layer, interlayer insulating film, the second metal on the substrate successively
Layer, passivation layer, planarization layer and anode film；
Wherein, at least retain second metal layer on the alignment mark region.
11. the forming method of flexibility OLED display panel as claimed in claim 10, which is characterized in that the alignment mark area
Also retain anode film and barrier layer on domain, the alignment mark neighboring area only retains barrier layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710101449.0A CN108511619A (en) | 2017-02-24 | 2017-02-24 | OLED alignment marks, flexible OLED display panel and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710101449.0A CN108511619A (en) | 2017-02-24 | 2017-02-24 | OLED alignment marks, flexible OLED display panel and forming method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108511619A true CN108511619A (en) | 2018-09-07 |
Family
ID=63373749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710101449.0A Pending CN108511619A (en) | 2017-02-24 | 2017-02-24 | OLED alignment marks, flexible OLED display panel and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108511619A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113380967A (en) * | 2021-06-08 | 2021-09-10 | 安徽熙泰智能科技有限公司 | Preparation method of laminated anode of strong microcavity device |
| WO2022056785A1 (en) * | 2020-09-17 | 2022-03-24 | 京东方科技集团股份有限公司 | Display panel and preparation method therefor, and display apparatus |
| US20220165977A1 (en) * | 2020-11-24 | 2022-05-26 | Hefei Boe Joint Technology Co., Ltd. | Display panel, method for manufacturing same, and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101097302A (en) * | 2006-06-30 | 2008-01-02 | Lg.菲利浦Lcd株式会社 | Flexible display and method for forming alignment key of the same |
| CN103839967A (en) * | 2012-11-21 | 2014-06-04 | 三星显示有限公司 | Organic light emitting diode display apparatus and method of manufacturing the same |
| CN204243044U (en) * | 2014-12-04 | 2015-04-01 | 昆山国显光电有限公司 | Touch OLED display panel and touch OLED display thereof and alignment mark |
-
2017
- 2017-02-24 CN CN201710101449.0A patent/CN108511619A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101097302A (en) * | 2006-06-30 | 2008-01-02 | Lg.菲利浦Lcd株式会社 | Flexible display and method for forming alignment key of the same |
| CN103839967A (en) * | 2012-11-21 | 2014-06-04 | 三星显示有限公司 | Organic light emitting diode display apparatus and method of manufacturing the same |
| CN204243044U (en) * | 2014-12-04 | 2015-04-01 | 昆山国显光电有限公司 | Touch OLED display panel and touch OLED display thereof and alignment mark |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022056785A1 (en) * | 2020-09-17 | 2022-03-24 | 京东方科技集团股份有限公司 | Display panel and preparation method therefor, and display apparatus |
| US11864418B2 (en) | 2020-09-17 | 2024-01-02 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel, preparation method thereof and display device |
| US20220165977A1 (en) * | 2020-11-24 | 2022-05-26 | Hefei Boe Joint Technology Co., Ltd. | Display panel, method for manufacturing same, and display device |
| US11925048B2 (en) * | 2020-11-24 | 2024-03-05 | Hefei Boe Joint Technology Co., Ltd. | Display panel, method for manufacturing same, and display device |
| CN113380967A (en) * | 2021-06-08 | 2021-09-10 | 安徽熙泰智能科技有限公司 | Preparation method of laminated anode of strong microcavity device |
| CN113380967B (en) * | 2021-06-08 | 2023-04-07 | 安徽熙泰智能科技有限公司 | Preparation method of laminated anode of strong microcavity device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102180037B1 (en) | Flexible display and manufacturing method thereof | |
| CN104078424B (en) | Low-temperature poly-silicon TFT array substrate, manufacturing method thereof and display device | |
| KR101309863B1 (en) | Luminescence display and fabricating method thereof | |
| CN104022123B (en) | A kind of flexible display substrates and preparation method thereof, flexible display apparatus | |
| CN104218041B (en) | Array base palte and preparation method and display device | |
| WO2017092173A1 (en) | Tft backplane structure and manufacturing method therefor | |
| WO2019080223A1 (en) | Oled panel and method for fabricating same | |
| CN106206620B (en) | Thin-film transistor array base-plate and preparation method thereof and display device | |
| TWI695527B (en) | Display panel | |
| CN103178082B (en) | Display device and manufacture method thereof | |
| US9153700B2 (en) | Method of manufacturing thin-film transistor, method of manufacturing organic light-emitting display device including the same, and thin-film transistor and organic light-emitting display device manufactured using the methods | |
| TW201423975A (en) | Organic light-emitting display apparatus and method of manufacturing the same | |
| WO2019184252A1 (en) | Flexible tft substrate and manufacturing method thereof | |
| TW200541379A (en) | Organic light-emmiting display device and fabricating thereof | |
| KR20170033965A (en) | Transparent display devices and methods of manufacturing transparent display devices | |
| TW588299B (en) | Active-matrix organic electroluminescence display device and fabricating method thereof | |
| CN108511619A (en) | OLED alignment marks, flexible OLED display panel and forming method thereof | |
| KR20140080211A (en) | Thin film transistor substrate, organic light emitting apparatus comprising the same, method for manufacturing thin film transistor substrate, and method for manufacturing organic light emitting apparatus | |
| CN1964063B (en) | Polycrystalline silicon film pixel electrode for organic light emitting diode display | |
| CN103489892B (en) | A kind of array base palte and preparation method thereof and display unit | |
| CN109671722A (en) | Organic LED array substrate and its manufacturing method | |
| WO2020118988A1 (en) | Display panel and manufacturing method thereof | |
| CN103022355B (en) | A kind of low-temperature polysilicon film transistor and preparation method thereof | |
| TW200308178A (en) | Organic electroluminescent device | |
| CN110832626B (en) | Flexible display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180907 |