CN108511510B - Temperature monitoring wafer and chamber temperature monitoring method - Google Patents
Temperature monitoring wafer and chamber temperature monitoring method Download PDFInfo
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- CN108511510B CN108511510B CN201710110903.9A CN201710110903A CN108511510B CN 108511510 B CN108511510 B CN 108511510B CN 201710110903 A CN201710110903 A CN 201710110903A CN 108511510 B CN108511510 B CN 108511510B
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000011248 coating agent Substances 0.000 claims abstract description 66
- 238000000576 coating method Methods 0.000 claims abstract description 66
- 238000010438 heat treatment Methods 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 26
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 30
- 230000002159 abnormal effect Effects 0.000 claims description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 239000004447 silicone coating Substances 0.000 claims description 4
- 238000012806 monitoring device Methods 0.000 claims 1
- 238000007689 inspection Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 56
- 238000010791 quenching Methods 0.000 description 8
- 230000000171 quenching effect Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000007872 degassing Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000741 silica gel Substances 0.000 description 5
- 229910002027 silica gel Inorganic materials 0.000 description 5
- 230000007704 transition Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention provides a temperature monitoring wafer and a chamber temperature monitoring method, wherein the temperature monitoring wafer is used for monitoring and detecting the temperature in a chamber and comprises the following steps: the fluorescent coating has different fluorescent characteristics under different temperature conditions. Namely, the temperature monitoring wafer is formed by utilizing the fluorescent characteristic of the fluorescent material, the temperature in the cavity can be monitored and detected through the temperature monitoring wafer, whether the heating element is damaged or not can be further deduced according to the inspection result, and the purpose of monitoring the heating element is achieved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a temperature monitoring wafer and a chamber temperature monitoring method.
Background
In the field of semiconductor manufacturing, wafer processing is typically performed in a process chamber, which is typically maintained at a temperature within a certain range. When the temperature in the chamber is abnormal, the wafer is directly affected.
For example, in a film formation process of a semiconductor, before performing a film deposition, a wafer is usually dried in a degassing chamber to remove water vapor from the surface of the wafer, so as to avoid the water vapor escaping during the film deposition process from affecting the formed film. When the temperature of the wafer in the degassing chamber is too high, the wafer is easy to crack. Therefore, monitoring and detecting the temperature in the chamber is of great importance.
Disclosure of Invention
The invention aims to provide a temperature monitoring wafer and a method for monitoring and detecting the temperature in a chamber through the temperature monitoring and detecting wafer, which can monitor the temperature in the chamber in a short time under the condition of not influencing the utilization rate of equipment.
Therefore, the invention provides a temperature monitoring wafer, which is used for monitoring and detecting the temperature in a chamber, and comprises: the fluorescent coating has different fluorescent characteristics under different temperature conditions.
Optionally, the chamber comprises a heating element by which the temperature within the chamber is maintained within a predetermined range.
Optionally, the fluorescent material in the fluorescent coating is an organic fluorescent material.
Optionally, the fluorescent coating is a phosphor film.
Optionally, the predetermined temperature of the chamber is less than or equal to 300 ℃.
Optionally, the material of the fluorescent coating includes anthracene.
Optionally, the material of the fluorescent coating further includes tetraethoxysilane.
Optionally, the temperature monitoring wafer further comprises a silica gel coating, and the silica gel coating covers the fluorescent coating.
Another object of the present invention is to provide a method for monitoring a chamber temperature, which uses the temperature monitoring wafer for monitoring and detecting, including:
providing a temperature monitoring wafer, wherein the temperature monitoring wafer is a wafer with a fluorescent coating, and the fluorescent coating has different fluorescent characteristics under different temperature conditions;
placing the temperature monitoring wafer in a chamber;
observing light generated by a fluorescent coating in the temperature monitoring wafer; and judging whether the light is light of a predetermined color or intensity; if the fluorescent coating can generate light with a preset color or intensity, judging that the temperature in the cavity is not abnormal; if the fluorescent coating does not produce light of a predetermined color or intensity, determining that an anomaly exists in the temperature within the chamber.
Optionally, the chamber comprises a heating element by which the temperature within the chamber is maintained within a predetermined range.
Optionally, the heating element comprises a plurality of heating lamps.
Optionally, the plurality of heating lamps are connected in parallel to form the heating element.
Optionally, the chamber is a degassing chamber.
Optionally, the chamber has a transparent viewing window.
The temperature monitoring wafer provided by the invention is provided with a fluorescent coating, and the fluorescent coating can show different fluorescent characteristics under different temperature conditions. Namely, the temperature monitoring wafer is formed by utilizing the fluorescence characteristic of the fluorescent material, and the temperature change in the chamber is monitored by adopting the temperature monitoring wafer, so that the aim of monitoring the chamber temperature can be fulfilled in a short time. The fluorescent material in the fluorescent coating can be organic fluorescent material, and compared with inorganic fluorescent material, the organic fluorescent material does not pollute the chamber.
Further, the present invention provides a solution to the problem of inspecting heating elements directly, as opposed to chambers having heating elements. The temperature of the chamber is detected by adopting the temperature monitoring wafer, and whether the heating element in the chamber is damaged or not is deduced according to the detection structure, so that the purpose of monitoring the heating element in the chamber can be completed in a short time under the condition of not influencing the utilization rate of equipment, the operation is simple, and a large amount of time can be saved.
Drawings
FIG. 1 is a schematic view of a temperature monitoring wafer according to an embodiment of the present invention;
FIG. 2 is a diagram of energy levels of an organic molecule versus the process of electron transition;
FIG. 3 is a flow chart illustrating a method for monitoring chamber temperature according to an embodiment of the present invention;
fig. 4 is a circuit diagram of a heating element in a chamber temperature monitoring method according to an embodiment of the invention.
Detailed Description
The core idea of the invention is to provide a temperature monitoring wafer and a monitoring detection of the temperature in the chamber by the temperature monitoring detection wafer. Wherein, the temperature monitoring wafer includes: the fluorescent coating has different fluorescent characteristics under different temperature conditions.
The temperature monitoring wafer provided by the invention is provided with the fluorescent coating, and the fluorescent coating can show different fluorescent characteristics under different temperature conditions, so that whether the temperature in the chamber is abnormal or not can be judged according to the light generated by the temperature monitoring wafer. The temperature monitoring wafer provided by the invention can monitor and check the temperature of the chamber under the condition of normal operation of the chamber, is convenient to operate and can be completed in a short time.
The temperature monitoring method for monitoring the temperature of the wafer and the chamber according to the present invention will be described in detail with reference to the accompanying drawings and embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 1 is a schematic structural diagram of a temperature monitoring wafer according to an embodiment of the present invention, and as shown in fig. 1, the temperature monitoring wafer includes: a substrate 110 and a fluorescent coating 120 formed on the substrate 110, wherein the fluorescent coating 120 has different fluorescent characteristics under different temperature conditions. That is, the fluorescent coating 120 has a temperature quenching characteristic, and the emission intensity decreases with an increase in temperature, thereby red-shifting the emission spectrum. Specifically, the reason why the temperature quenching is generated by the fluorescent coating 120 is as follows: firstly, due to the rise of temperature, the lattice vibration is intensified, so that the lattice relaxation of a luminescence center is enhanced, the probability of radiationless transition is increased, and the luminous efficiency is reduced; secondly, due to the rise of temperature, the state of the luminescence center or the surrounding microenvironment is subjected to certain essential change, thereby reducing the luminous efficiency.
By utilizing the temperature quenching characteristic of the fluorescent coating 120, when the temperature in the chamber is higher than the quenching temperature during monitoring of the heating element in the chamber, the intensity of light emitted by the fluorescent coating 120 gradually decreases with the increase of the temperature, and the fluorescent coating 120 does not generate light even under the higher temperature condition. Therefore, whether the temperature in the chamber is abnormal or not can be judged directly according to the color or the intensity of the light generated by the temperature monitoring wafer.
Further, the chamber includes a heating element by which a temperature within the chamber is maintained within a predetermined range. Thus, whether the heating element is damaged or not will directly affect the temperature in the chamber. It can be seen that monitoring of the heating element in the chamber is also particularly important.
At present, in order to ensure that the heating element can be normally used, the heating element needs to be checked, the degassing chamber needs to be closed and the temperature of the heating element needs to be reduced in the checking process, and in addition, the checking operation is complicated, so that a large amount of time needs to be consumed, and the utilization rate of equipment is influenced. In this embodiment, when the heating element is monitored and detected, the temperature monitoring wafer may also be used to implement the monitoring. Specifically, firstly, the temperature in the chamber is detected by using the temperature monitoring wafer; then, whether the heating element is damaged or not can be judged according to the detection result, and if the temperature in the cavity is abnormal, the heating element can be concluded to be damaged; if there is no anomaly in the temperature within the chamber, it can be concluded that the heating element is not anomalous.
In this embodiment, the fluorescent material in the fluorescent coating 120 is preferably an organic fluorescent material. Since the inorganic fluorescent material usually contains metal ions, the existence of the metal ions is easy to affect the chamber and even the whole processing environment of the wafer, and the adoption of the organic fluorescent material can effectively avoid the problem of pollution to the chamber.
Specifically, the fluorescent coating 120 may use a phosphor film, such as a blue phosphor film. Of course, in practical applications, the fluorescent coating 120 of the corresponding material may be selected according to the predetermined temperature in the chamber.
For example, when the predetermined temperature of the chamber is 300 ℃ or less, a fluorescent paint containing anthracene (triphenyl) may be used. Anthracene has blue fluorescence characteristics, and the quenching temperature is 280-320 ℃, so that anthracene can generate blue light when the temperature is less than or equal to 300 ℃, particularly when the temperature range is 100-250 ℃; and when the temperature is higher than 300 ℃ and gradually rises, the blue light generated by anthracene gradually attenuates and disappears.
And the anthracene is used as an organic fluorescent material, and the temperature monitoring wafer formed by the anthracene does not pollute the environment when being used for temperature monitoring test. Specifically, anthracene is a fused ring aromatic hydrocarbon with a molecular formula of C14H10The compound is formed by fusing three benzene rings, all carbon atoms and hydrogen atoms in a molecule are in the same plane, and the p orbital sides on adjacent carbon atoms on the rings are mutually crossed and covered to form a closed conjugated large pi bond. Fluorescence of an organic substance generally occurs in a molecule having a rigid plane and a pi-electron conjugated system, which is a radiative transition phenomenon that the molecule returns from an excited state to a ground state, and most organic substances have even-numbered electrons, and the electrons exist in pairs in respective molecular orbitals in the ground state. According to Pauli's principle of incompatibility, two electron spins in the same orbit are opposite, so that the total electron spin in the molecule is zero, and the electron energy state of the molecule is called singlet state. When an electron in a molecule is excited by absorbing energy, usually with its spin unchanged, the excited state is a singlet state. If the electrons undergo spin reversal during excitation, the excited state is a triplet state, which is often lower in energy than the singlet state. Fig. 3 is an energy diagram of the energy level of an organic molecule and the transition process of an electron, as shown in fig. 2, when the organic molecule is excited to a substantially singlet state S0 by optical energy (photon), undergoes vibrational energy relaxation VR to a lowest excited singlet state S1, and finally returns to the substantially singlet state S0 from the lowest excited singlet state S1, fluorescence F is generated.
Furthermore, the material of the fluorescent coating 120 further includes tetraethyl orthosilicate (TEOS). When the fluorescent coating 120 is made of a material that does not resist high temperature, such as anthracene, which has a melting point of 216 ℃, tetraethoxysilane may be added to the fluorescent material to form the heat-resistant coating. That is, the fluorescent coating 120 formed using the mixture of anthracene and tetraethoxysilane has better heat resistance, and thus the formed temperature monitoring wafer can be applied to a chamber having a wider temperature range.
With continued reference to fig. 1, in the present embodiment, the temperature monitoring wafer further includes a silicone coating 130, and the silicone coating 130 covers the fluorescent coating 120. By covering the silica gel coating 130 on the fluorescent coating 120, the fluorescent coating 120 is prevented from being exposed, so that the fluorescent coating 120 can be protected on one hand, and the fluorescent coating 120 can be prevented from falling off to pollute the chamber on the other hand.
In this embodiment, the forming method of the temperature monitoring wafer may refer to the following steps: firstly, mixing anthracene and tetraethoxysilane to form a mixed solution; then, spin-coating the mixed solution on the substrate 110 under a vacuum condition to form the fluorescent coating 120; next, a silica gel solution is spin-coated on the fluorescent coating 120 under a vacuum condition to form a silica gel coating 130.
Based on the temperature monitoring wafer, the invention also provides a method which is convenient to operate and can monitor and detect the temperature of the chamber in a short time. Fig. 3 is a schematic flow chart of a monitoring method of a chamber temperature according to an embodiment of the invention, as shown in fig. 3, the monitoring method includes:
s10, providing a temperature monitoring wafer, wherein the temperature monitoring wafer is a wafer formed with a fluorescent coating, and the fluorescent coating has different fluorescent characteristics under different temperature conditions;
s20, placing the temperature monitoring wafer in a chamber;
s30, observing light generated by a fluorescent coating in the temperature monitoring wafer;
s40, judging whether the light generated by the fluorescent coating is light with preset color or intensity; if the fluorescent coating can generate light with a preset color or intensity, judging that the temperature in the cavity is not abnormal; if the fluorescent coating does not produce light of a predetermined color or intensity, determining that an anomaly exists in the temperature within the chamber.
In other words, in the monitoring method of the heating element provided by the invention, the temperature monitoring wafer with the temperature quenching characteristic is applied to monitoring the temperature of the chamber, so that the purpose of monitoring and detecting the temperature of the chamber more quickly and conveniently is realized under the condition of not influencing the utilization rate of equipment. In addition, the monitoring method provided by the invention can be applied to various chambers, and wafers can be monitored at different temperatures according to different chambers. For example, the chamber may be a degassing chamber.
A heating element is generally disposed in the chamber, and the temperature within the chamber is maintained within a specified range by the heat generated by the heating element. Fig. 4 is a circuit diagram of a heating element in a method for monitoring the temperature of a chamber according to an embodiment of the present invention, as shown in fig. 4, 6 parallel heating lamps 10 are disposed in the chamber, that is, the parallel heating lamps 10 are used as the heating element. A power voltage is applied to both ends of the parallel heating lamps 10, and when the circuit is turned on, the heating lamps 10 emit light and generate heat. By means of the heating lamp 10, on the one hand a light source can be provided; on the other hand, the function of heating the chamber can be realized. In this embodiment, the light emitting element for providing the light source and the heating element for maintaining the temperature of the chamber are integrated in the same device. Of course, in other embodiments, the light emitting element and the heating element may also be two independent devices, which is not limited herein.
Referring to fig. 4, when some of the plurality of heating lamps 10 are damaged, the total heat generated from the heating lamps 10 that can normally emit light is much greater than the total heat generated when the heating lamps 10 are not damaged, thereby causing the temperature in the chamber to rise. If the predetermined temperature in the chamber is set to be 300 ℃ or lower, the temperature can be monitored and detected by using a temperature monitoring wafer formed by a fluorescent coating with a corresponding quenching temperature, as described above, the temperature monitoring wafer with anthracene. Anthracene can produce blue light when the temperature is 300 ℃ or less, especially when the temperature range is 100-250 ℃; and when the temperature is higher than 300 ℃ and gradually rises, the blue light generated by anthracene gradually attenuates and disappears.
Optionally, the chamber may be provided with a transparent observation window through which the temperature monitoring wafer in the chamber may be observed. Especially when the chamber is a closed chamber, it may be more convenient to pass the viewing window.
In summary, the temperature monitoring wafer is formed by utilizing the quenching characteristic of the fluorescent material, and the temperature change in the chamber is monitored by adopting the temperature monitoring wafer, so that the influence on the wafer caused by abnormal temperature in the chamber is avoided. Furthermore, an organic fluorescent material is used as a fluorescent material of a fluorescent coating in the temperature monitoring wafer, so that the pollution to the cavity can be effectively avoided during temperature monitoring detection.
In addition, the temperature monitoring wafer can be further applied to monitoring the heating element in the chamber, namely, whether the heating element in the chamber is damaged or not is deduced by detecting the temperature in the chamber, so that the purpose of monitoring the heating element is achieved. Compared with the existing heating element checking method, the method can judge the condition of the heating element in a shorter time under the condition that the chamber normally operates, has shorter operation time and is simple in monitoring method.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (14)
1. A temperature monitoring wafer is used for monitoring and detecting the temperature in a chamber, and comprises: the temperature monitoring device comprises a substrate and a fluorescent coating formed on the substrate, wherein the fluorescent coating has different fluorescent characteristics under different temperature conditions, the fluorescent coating attenuates or does not emit light under the condition of higher than a preset temperature, the fluorescent coating is used for observing whether the fluorescent coating generates light with a preset color or intensity or not during temperature monitoring, and if the light with the preset color or intensity is not observed, the temperature in the cavity is judged to be abnormal.
2. The temperature monitoring wafer of claim 1, wherein the chamber includes a heating element by which a temperature within the chamber is maintained within a predetermined range.
3. The temperature monitoring wafer of claim 1, wherein the fluorescent material in the fluorescent coating is an organic fluorescent material.
4. The temperature monitoring wafer of claim 1, wherein the fluorescent coating is a phosphor film.
5. The temperature monitoring wafer of claim 1, wherein the predetermined temperature of the chamber is 300 ℃ or less.
6. The temperature monitoring wafer of claim 5, wherein the material of the fluorescent coating comprises anthracene.
7. The temperature monitoring wafer according to claim 6, wherein the material of the fluorescent coating further comprises tetraethoxysilane.
8. The temperature monitoring wafer of claim 1, further comprising a silicone coating, wherein the silicone coating covers the fluorescent coating.
9. A method for monitoring chamber temperature, wherein the monitoring and detecting are performed by using the temperature monitoring wafer according to any one of claims 1 to 8, comprising:
providing a temperature monitoring wafer, wherein the temperature monitoring wafer is a wafer with a fluorescent coating, and the fluorescent coating has different fluorescent characteristics under different temperature conditions;
placing the temperature monitoring wafer in a chamber;
observing light generated by a fluorescent coating in the temperature monitoring wafer; and judging whether the light is light of a predetermined color or intensity; if the fluorescent coating can generate light with a preset color or intensity, judging that the temperature in the cavity is not abnormal; if the fluorescent coating does not produce light of a predetermined color or intensity, determining that an anomaly exists in the temperature within the chamber.
10. A method of monitoring the temperature of a chamber as claimed in claim 9, wherein the chamber includes a heating element by which the temperature within the chamber is maintained within a predetermined range.
11. The method of monitoring chamber temperature of claim 10, wherein the heating element comprises a plurality of heating lamps.
12. The method of monitoring chamber temperature of claim 11, wherein said plurality of heating lamps are connected in parallel to form said heating element.
13. The method of monitoring chamber temperature of claim 9, wherein the chamber is a degas chamber.
14. The method of claim 9 wherein the chamber has a transparent viewing window.
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| CN101268346A (en) * | 2005-09-22 | 2008-09-17 | 朗姆研究公司 | Apparatus for determining a temperature of a substrate and methods therefor |
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Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3039480B2 (en) * | 1997-03-11 | 2000-05-08 | 日本電気株式会社 | Heat history judgment method and heat history display label |
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|---|---|---|---|---|
| US5730528A (en) * | 1996-08-28 | 1998-03-24 | Lockheed Martin Energy Systems, Inc. | High temperature thermometric phosphors for use in a temperature sensor |
| US6238830B1 (en) * | 1999-10-29 | 2001-05-29 | Advanced Micro Devices | Active control of temperature in scanning probe lithography and maskless lithograpy |
| CN101268346A (en) * | 2005-09-22 | 2008-09-17 | 朗姆研究公司 | Apparatus for determining a temperature of a substrate and methods therefor |
| CN101441116A (en) * | 2008-12-22 | 2009-05-27 | 中国科学院长春应用化学研究所 | Blue white phosphors application of chemical formula as 2SrOCeO2 |
| US20150204198A1 (en) * | 2012-08-14 | 2015-07-23 | Snecma | Method of measuring the temperature reached by a part, in particular a turbine engine part |
| WO2016007462A1 (en) * | 2014-07-08 | 2016-01-14 | Watlow Electric Manufacturing Company | Bonded assembly with integrated temperature sensing in bond layer |
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