CN108508696A - Mask plate and exposure method - Google Patents
Mask plate and exposure method Download PDFInfo
- Publication number
- CN108508696A CN108508696A CN201810266147.3A CN201810266147A CN108508696A CN 108508696 A CN108508696 A CN 108508696A CN 201810266147 A CN201810266147 A CN 201810266147A CN 108508696 A CN108508696 A CN 108508696A
- Authority
- CN
- China
- Prior art keywords
- mask plate
- gas
- membrane support
- filled
- plate chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
Abstract
A kind of mask plate and exposure method, the mask plate include：The surface of substrate, the substrate has mask pattern；Membrane support, the protection membrane support is protected to be fixedly connected on the surface of the substrate；Protective film is fixed on the protection membrane support；Wherein, the protection membrane support, protective film and substrate surround mask plate chamber, filled with non-oxidizing gas in the mask plate chamber.The present invention program can extend the service life of mask plate, reduce production cost and improve product quality.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, to a kind of mask plate and exposure method.
Background technology
In existing photoetching process, need the figure on mask plate (Mask) accurately projection exposure to coated photoetching
On the wafer (Wafer) of glue.Continuous with chip feature sizes reduces and the increase of integrated level, the mask pattern on mask plate
Accuracy requirement be continuously improved.
In the prior art, generally use molybdenum silicide (MoSi) forms the mask pattern on mask plate, and passes through high energy light
Beam irradiates mask plate to complete to expose.However, mask plate in the prior art is after prolonged, under product yield meeting gradually
Drop needs that mask plate is carried out returning repair in shop again or be scrapped when serious.
By upper, there is an urgent need for a kind of mask plates, can have longer service life, to reduce production cost and improve product matter
Amount.
Invention content
The technical problem to be solved by the present invention is to provide a kind of mask plate and exposure methods, can extend the use of mask plate
Period reduces production cost and improves product quality.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of mask plate, including：Substrate, the table of the substrate
Face has mask pattern；Membrane support, the protection membrane support is protected to be fixedly connected on the surface of the substrate；Protective film, it is fixed
In the protection membrane support；Wherein, the protection membrane support, protective film and substrate surround mask plate chamber, the mask plate chamber
Filled with non-oxidizing gas in room.
Optionally, the protection membrane support has gas vent, for the indoor non-oxidizing gas of mask plate chamber to be discharged
Body.
Optionally, the mask plate further includes：Relief valve is coupled with the gas vent, is suitable in the mask plate chamber
Interior pressure is opened when being more than default threshold pressure upper limit value, and is less than or equal to default pressure in the indoor pressure of mask plate chamber
It is closed when strong bottom threshold value, wherein the default threshold pressure upper limit value is more than or equal to the default threshold pressure lower limiting value.
Optionally, the protection membrane support also has air-filled pore, described non-oxide for being filled with to the mask plate chamber
Property gas.
Optionally, the mask plate further includes：Detection of gas module, for by the air-filled pore to the mask plate
When chamber is filled with non-oxidizing gas, the gas of gas vent discharge is detected, the non-oxidizing gas described in the gas of discharge
When the concentration of body is more than predetermined threshold value, stop inflation.
Optionally, the non-oxidizing gas is selected from following one or more：Nitrogen, inert gas and hydrogen.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of exposure method, including：Mask plate is provided, it is described
Mask plate includes substrate, protection membrane support and protective film, wherein the surface of the substrate has mask pattern, the protection
Membrane support is fixedly connected on the surface of the substrate, and the protective film is fixed on the protection membrane support, the protection membrane support,
Protective film and substrate surround mask plate chamber；It is filled with non-oxidizing gas to the mask plate chamber；Using the mask plate pair
Wafer is exposed.
Optionally, the protection membrane support has gas vent, for the indoor non-oxidizing gas of mask plate chamber to be discharged
Body.
Optionally, the mask plate further includes relief valve, and the relief valve is coupled with the gas vent, is covered described in use
Before film version is exposed wafer, further include：It is more than default threshold pressure upper limit value in the indoor pressure of mask plate chamber
Relief valve described in Shi Kaiqi, and close institute when the indoor pressure of mask plate chamber is less than or equal to default threshold pressure lower limiting value
State relief valve, wherein the default threshold pressure upper limit value is more than or equal to the default threshold pressure lower limiting value.
Optionally, the protection membrane support also has air-filled pore, described to be filled with non-oxidizing gas to the mask plate chamber
Body includes：By the air-filled pore non-oxidizing gas is filled with to the mask plate chamber.
Optionally, when being filled with the non-oxidizing gas to the mask plate chamber by the air-filled pore, the exposure
Light method further includes：The concentration of the gas for detecting gas vent discharge, the non-oxidizing gas described in the gas of discharge is super
When crossing predetermined threshold value, stop inflation.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
In embodiments of the present invention, a kind of mask plate is provided, including：The surface of substrate, the substrate has mask pattern；
Membrane support, the protection membrane support is protected to be fixedly connected on the surface of the substrate；Protective film is fixed on the protective film branch
Frame；Wherein, the protection membrane support, protective film and substrate surround mask plate chamber, filled with non-oxide in the mask plate chamber
Property gas.Using the above scheme, by being filled with non-oxidizing gas in mask plate chamber, mask pattern is effectively prevented from height
The lines caused by oxidation expand under energy light beam irradiation, and the service life for extending mask plate, holding is contributed to be transferred to photoresist
On actual graphical critical size, reduce production cost and improve product quality.
Further, in embodiments of the present invention, can by be arranged gas vent and with the gas vent coupling relief valve,
It opens, can be vented in time when the indoor pressure of mask plate chamber is larger, help to avoid due to inflating in gas replenishment process
Amount has an impact the pattern of protective film, additionally aids the caused gas solved in time in exposure process since temperature raises
Expansion issues.
Further, in embodiments of the present invention, inflation can passed through by the way that air-filled pore and detection of gas module is arranged
When hole is filled with non-oxidizing gas to the mask plate chamber, the gas of the gas vent discharge is detected, when in the gas of discharge
The concentration of the non-oxidizing gas be more than predetermined threshold value when, stop inflation, contribute to more accurately to whether inflate terminate into
Row judges, to effectively save charge air conditioning while making inflation effect meet demand.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of mask plate in the prior art；
Fig. 2 is a kind of structural schematic diagram of mask plate in the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another mask plate in the embodiment of the present invention；
Fig. 4 is a kind of flow chart of exposure method in the embodiment of the present invention.
Specific implementation mode
In the prior art, under high-energy light beam guiding irradiation, the mask pattern on mask plate often changes, to use
Molybdenum silicide (MoSi) is formed for the mask pattern, and the line width of mask pattern is with exposure dose described in dry air environment
Increase, and it is 4nm/50KJ or so to increase ratio, is increased so as to cause the critical size of graph area, the reality being transferred on photoresist
The critical size of border figure also increases, and finally influences product yield, needs that mask plate is carried out returning repair in shop again or be scrapped when serious.
Specifically, by applied to photoresist exposure wavelength for a kind of mask plate of 193nm for, using MoSi formed mask pattern
Line width increase ratio be about 4nm/50KJ or so.
Fig. 1 is that a kind of structural schematic diagram of mask plate, the mask plate may include substrate 100, protection in the prior art
Membrane support 110 and protective film 120.
Wherein, the surface of the substrate 100 has mask pattern 102；The protection membrane support 110 is fixedly connected on described
The surface of substrate 100, such as membrane support 110 can will be protected to be pasted onto the surface of substrate 100；The protective film 120 is fixed on
The protection membrane support 110, such as protective film 120 can be pasted onto to the surface of protection membrane support 110.
Further, during pasting protective film 120, environmental gas can be sealed into protection membrane support 110, protected
In the mask plate chamber 104 that cuticula 120 and substrate 100 surround, the environmental gas for example can be air.
The present inventor passes through the study found that in the prior art, the line width variation of mask pattern mainly due to
Caused by oxidation expansion, specifically, the oxidation of oxidizing substance is easy to cause the expansion of MoSi, such as in photon energy
Auxiliary under, oxygen in air (such as O2) diffuse into MoSi and be allowed to aoxidize, and then the line width of mask pattern is caused to increase.
In addition, when mask pattern uses other substances, such as when chromium (Cr) formation mask pattern, be also easy to be occurred by oxidation due to Cr
The problems such as electromigration, influences mask plate quality.Specifically, Cr is conductive metal, and the substrate of mask is (for example, by using quartzy glass
Glass) it is insulator, after long-time service, Cr can not only be aoxidized but also can be migrated (Migration), especially under electrostatic interaction, this
Kind of electromigration (Electric Field-induced migration, EFIM) can lead to the destruction of figure and line width on mask
Variation.
In embodiments of the present invention, a kind of mask plate is provided, including：The surface of substrate, the substrate has mask pattern；
Membrane support, the protection membrane support is protected to be fixedly connected on the surface of the substrate；Protective film is fixed on the protective film branch
Frame；Wherein, the protection membrane support, protective film and substrate surround mask plate chamber, filled with non-oxide in the mask plate chamber
Property gas.Using the above scheme, by that, filled with non-oxidizing gas, can be protected under high-energy light beam guiding irradiation in mask plate chamber
The line width for holding mask pattern is effectively prevented from the lines expansion of mask pattern, contributes to the service life for extending mask plate, keep
It is transferred to the critical size of the actual graphical on photoresist, reduce production cost and improves product quality.
It is understandable to enable above-mentioned purpose, feature and the advantageous effect of the present invention to become apparent, below in conjunction with the accompanying drawings to this
The specific embodiment of invention is described in detail.
Fig. 2 is a kind of structural schematic diagram of mask plate in the embodiment of the present invention, the mask plate may include substrate 200,
Protect membrane support 210 and protective film 220.
Wherein, the surface of the substrate 200 has mask pattern 202；The protection membrane support 210 is fixedly connected on described
The surface of substrate 200, such as membrane support 210 can will be protected to be pasted onto the surface of substrate 200；The protective film 220 is fixed on
The protection membrane support 210, such as protective film 220 can be pasted onto to the surface of protection membrane support 210.
Wherein, the protection membrane support 210, protective film 220 and substrate 200 surround mask plate chamber 204, the mask plate
Filled with non-oxidizing gas 230 in chamber 204.
The material of mask pattern 202 can be MoSi or other materials appropriate.
It is understood that oxidizing gas refers to the gas for having oxidisability, it is easy to cause material in exposing environment
Oxidation reaction occurs for material, and particularly, which has oxidisability to the material for forming the mask pattern, such as can
To aoxidize MoSi, lead to the expansion of MoSi, the oxidizing gas can be containing the gas of oxygen or other can aoxidize
The gas of MoSi；And non-oxidizing gas is then the gas other than oxidizing gas, non-oxidizing gas in exposing environment simultaneously
The oxidation or caused oxidation reaction that will not cause mask pattern can be ignored.
As a non-limiting example, the non-oxidizing gas can be selected from following one or more：Nitrogen, indifferent gas
Body and hydrogen (H2)。
Preferably, nitrogen may be used as the non-oxidizing gas, due to its performance stabilization, dry cleansing and cost
Control is preferable, helps to improve the quality of mask plate.
In embodiments of the present invention, by, filled with non-oxidizing gas 230, contributing in height in mask plate chamber 204
The lower line width for keeping mask pattern of energy light beam irradiation is effectively prevented from the lines expansion of mask pattern, contributes to extension mask plate
Service life, keep the critical size for being transferred to actual graphical on photoresist, reduce production cost and improve product quality.
It is the structural schematic diagram of another mask plate in the embodiment of the present invention with reference to Fig. 3, Fig. 3.The another kind mask plate
May include substrate 200, mask pattern 202, protection membrane support 210 and protective film 220.
Wherein, the protection membrane support 210 can have gas vent 212, and the gas vent 212 is for being discharged the mask
Non-oxidizing gas 230 in version chamber 204.
In embodiments of the present invention, by the way that gas vent 212 is arranged, the gas filled can be discharged in time when inflating excessive more
Body, can also in gas expansion timely discharge part gas, help avoid generating pressure to mask plate, such as cause to protect
Film 220 expands deformation, causes the critical size for the actual graphical being transferred on photoresist to change, even results in protective film
220 rupture.
Further, another mask plate can also include relief valve 240.
Specifically, the relief valve 240 can be coupled with the gas vent 212, be suitable in the mask plate chamber 204
Pressure open when being more than default threshold pressure upper limit value, and the pressure in the mask plate chamber 204 be less than or equal to it is default
It is closed when threshold pressure lower limiting value, wherein the default threshold pressure upper limit value is more than or equal to the default threshold pressure lower limit
Value.
In embodiments of the present invention, setting gas vent 212 and the relief valve coupled with the gas vent 212 can be passed through
240, the pressure in mask plate chamber 204 is opened when larger, to being vented in time, help to avoid in gas replenishment process due to
Inflation is excessive to have an impact the pattern of protective film 220, additionally aids and is solved in time since temperature raises in exposure process
230 expansion issues of caused non-oxidizing gas.
It should be pointed out that the default threshold pressure upper limit value should not be arranged excessively high, otherwise can cause to mask
Version generation pressure is not exhausted but yet when excessive, and then may result in protective film 220 and expand deformation, or even occurs broken
It splits；The default threshold pressure lower limiting value should not be arranged too low, and pressure release is but still not turned off when otherwise can cause to be vented excessive
Valve, and then may result in protective film 220 and deform into mask plate chamber 204, it is also possible to it can cause to inflate frequency increase,
Influence production efficiency.In specific implementation, it may be used in the mask plate chamber 204 when protective film 220 does not occur obviously to deform
Maximum pressure as the default threshold pressure upper limit value, mask plate chamber when not occurring obviously to deform using protective film 220
Minimum pressure in room 204 is as the default threshold pressure lower limiting value.
Further, the protection membrane support 210 can also have air-filled pore 214, be used for the mask plate chamber 204
It is filled with the non-oxidizing gas 230.
It in embodiments of the present invention, can be in real time in the mask plate chamber 204 by the way that air-filled pore 214 is arranged
The non-oxidizing gas 230 is supplemented, and compared to by removable protective film 220, is weighed again after being filled with non-oxidizing gas 230
New bonding protective film 220, can effectively improve volumetric efficiency and production efficiency, and avoid the damage to protective film 220, to
Control production cost.
Further, another mask plate can also include detection of gas module 250.
Specifically, the detection of gas module 250 can be used for by the air-filled pore 214 to the mask plate chamber
204 when being filled with non-oxidizing gas 230, detects the gas of the discharge of the gas vent 212, non-oxide described in the gas of discharge
Property gas 230 concentration be more than predetermined threshold value when, stop inflation.
Further, in embodiments of the present invention, it can filled by the way that air-filled pore 214 and detection of gas module 250 is arranged
When entering non-oxidizing gas 230, if the concentration of non-oxidizing gas 230 described in the gas of discharge is more than predetermined threshold value,
Stop inflation, contributes to more accurately to whether inflating end and judging, to while making inflation effect meet demand
Effectively save charge air conditioning.
It should be pointed out that the predetermined threshold value should not be excessively high, it is otherwise easy to cause inflationtime extension, waste is excessive
Charge air conditioning；The predetermined threshold value should not be too low, is otherwise easy to cause in mask plate chamber 204 that there are excessive oxidisability
Gas, it is difficult to achieve the desired results.As a unrestricted example, can be arranged the predetermined threshold value be 70% to
98%.
In a kind of concrete application of the embodiment of the present invention, the refractive index of air and nitrogen is compared, with determination
It is filled with nitrogen in mask plate chamber 204 and discharge air, the influence to exposure effect are very small.Specifically, the folding of nitrogen
It is 1.000298 to penetrate rate, and the refractive index of air is 1.000292.
With reference to Fig. 4, Fig. 4 is a kind of flow chart of exposure method in the embodiment of the present invention.The exposure method may include
Step S41 to step S43：
Step S41：Mask plate is provided, the mask plate includes substrate, protection membrane support and protective film, wherein described
There is mask pattern, the protection membrane support to be fixedly connected on the surface of the substrate on the surface of substrate, and the protective film is fixed
In the protection membrane support, the protection membrane support, protective film and substrate surround mask plate chamber；
Step S42：It is filled with non-oxidizing gas to the mask plate chamber；
Step S43：Wafer is exposed using the mask plate.
In embodiments of the present invention, by, filled with non-oxidizing gas, contributing in high-energy light beam guiding in mask plate chamber
The lower line width for keeping mask pattern of irradiation, is effectively prevented from the lines expansion of mask pattern, contributes to the use for extending mask plate
Period keeps the critical size for the actual graphical being transferred on photoresist, reduces production cost and improves product quality.
Further, the protection membrane support has gas vent, and it is indoor non-oxygen to can be used for being discharged the mask plate chamber
The property changed gas.
Further, the mask plate further includes relief valve, and the relief valve is coupled with the gas vent, described in use
Before mask plate is exposed wafer, can also include：It is more than default threshold pressure in the indoor pressure of mask plate chamber
The relief valve is opened when upper limit value, and when the indoor pressure of mask plate chamber is less than or equal to default threshold pressure lower limiting value
Close the relief valve, wherein the default threshold pressure upper limit value is more than or equal to the default threshold pressure lower limiting value.
In embodiments of the present invention, by before being exposed to wafer using the mask plate, when the mask plate
It when the indoor pressure of chamber is improper, is adjusted, can be vented in time using relief valve, avoid having an impact post-exposure.
Further, the protection membrane support can also have air-filled pore, it is described be filled with to the mask plate chamber it is non-oxygen
Change property gas may include：By the air-filled pore non-oxidizing gas is filled with to the mask plate chamber.
Further, described when being filled with the non-oxidizing gas to the mask plate chamber by the air-filled pore
Exposure method can also include：The gas for detecting gas vent discharge, the non-oxidizing gas described in the gas of discharge
When concentration is more than predetermined threshold value, stop inflation.
In embodiments of the present invention, can by the way that air-filled pore and detection of gas module is arranged, by air-filled pore to institute
When stating mask plate chamber and being filled with non-oxidizing gas, the gas of the gas vent discharge is detected, it is non-described in the gas of discharge
When the concentration of oxidizing gas is more than predetermined threshold value, stop inflation, contribute to more accurately to whether inflating end and judging,
To effectively save charge air conditioning while making inflation effect meet demand.
It should be noted that the step of being filled with non-oxidizing gas into mask plate chamber can usually prepare exposure
Stage progress namely mask plate execute when being used for the first time in exposure process.For being filled with the feelings of non-oxidizing gas
Shape can be only inflated when needed, for example, in detecting the gas being discharged by gas vent non-oxidizing gas it is dense
It when degree is less than predetermined threshold value, can be inflated again, to supplement non-oxidizing gas, until non-oxidizable in the gas of discharge
The concentration of gas is more than predetermined threshold value.
Other principles, specific implementation and advantageous effect about the exposure method please refer to above and shown in Fig. 2 to Fig. 3
About the associated description of mask plate, details are not described herein again.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of mask plate, which is characterized in that including：
The surface of substrate, the substrate has mask pattern；
Membrane support, the protection membrane support is protected to be fixedly connected on the surface of the substrate；
Protective film is fixed on the protection membrane support；
Wherein, the protection membrane support, protective film and substrate surround mask plate chamber, filled with non-oxide in the mask plate chamber
Property gas.
2. mask plate according to claim 1, which is characterized in that the protection membrane support has gas vent, for being discharged
The indoor non-oxidizing gas of mask plate chamber.
3. mask plate according to claim 2, which is characterized in that further include：
Relief valve is coupled with the gas vent, is suitable for being more than the default threshold pressure upper limit in the indoor pressure of mask plate chamber
It opens when value, and is closed when the indoor pressure of mask plate chamber is less than or equal to default threshold pressure lower limiting value, wherein is described
Default threshold pressure upper limit value is more than or equal to the default threshold pressure lower limiting value.
4. mask plate according to claim 2, which is characterized in that the protection membrane support also have air-filled pore, for
The mask plate chamber is filled with the non-oxidizing gas.
5. mask plate according to claim 4, which is characterized in that further include：
Detection of gas module, for when being filled with non-oxidizing gas to the mask plate chamber by the air-filled pore, detecting
When the concentration of the gas of gas vent discharge, the non-oxidizing gas described in the gas of discharge is more than predetermined threshold value, stop
Inflation.
6. mask plate according to any one of claims 1 to 5, which is characterized in that the non-oxidizing gas is selected from following
It is one or more：Nitrogen, inert gas and hydrogen.
7. a kind of exposure method, which is characterized in that including：
Mask plate is provided, the mask plate includes substrate, protection membrane support and protective film, wherein the surface of the substrate has
There are mask pattern, the protection membrane support to be fixedly connected on the surface of the substrate, the protective film is fixed on the protective film
Holder, the protection membrane support, protective film and substrate surround mask plate chamber；
It is filled with non-oxidizing gas to the mask plate chamber；
Wafer is exposed using the mask plate.
8. exposure method according to claim 7, which is characterized in that the protection membrane support has gas vent, for arranging
Go out the indoor non-oxidizing gas of mask plate chamber.
9. exposure method according to claim 8, which is characterized in that the mask plate further includes relief valve, the pressure release
Valve is coupled with the gas vent, before being exposed to wafer using the mask plate, further includes：
The relief valve is opened when the indoor pressure of mask plate chamber is more than default threshold pressure upper limit value, and is covered described
The indoor pressure of film version chamber is less than or equal to close the relief valve when default threshold pressure lower limiting value, wherein the default pressure
Upper threshold value is more than or equal to the default threshold pressure lower limiting value.
10. exposure method according to claim 8, which is characterized in that the protection membrane support also has air-filled pore, described
Being filled with non-oxidizing gas to the mask plate chamber includes：
By the air-filled pore non-oxidizing gas is filled with to the mask plate chamber.
11. exposure method according to claim 10, which is characterized in that by the air-filled pore to the mask plate chamber
When room is filled with the non-oxidizing gas, further include：
The concentration of the gas for detecting gas vent discharge, the non-oxidizing gas described in the gas of discharge is more than predetermined threshold value
When, stop inflation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810266147.3A CN108508696A (en) | 2018-03-28 | 2018-03-28 | Mask plate and exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810266147.3A CN108508696A (en) | 2018-03-28 | 2018-03-28 | Mask plate and exposure method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108508696A true CN108508696A (en) | 2018-09-07 |
Family
ID=63379161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810266147.3A Pending CN108508696A (en) | 2018-03-28 | 2018-03-28 | Mask plate and exposure method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108508696A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW482947B (en) * | 1999-11-08 | 2002-04-11 | Shinetsu Chemical Co | Framed pellicle for dustproof protection of photolithographic photomask and method for exposure of photoresist layer on substrate surface to ultraviolet light through photomask |
| CN206020922U (en) * | 2016-08-05 | 2017-03-15 | 常州瑞择微电子科技有限公司 | A kind of new Type Protecting Film for avoiding the long mist particles of photomask |
-
2018
- 2018-03-28 CN CN201810266147.3A patent/CN108508696A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW482947B (en) * | 1999-11-08 | 2002-04-11 | Shinetsu Chemical Co | Framed pellicle for dustproof protection of photolithographic photomask and method for exposure of photoresist layer on substrate surface to ultraviolet light through photomask |
| CN206020922U (en) * | 2016-08-05 | 2017-03-15 | 常州瑞择微电子科技有限公司 | A kind of new Type Protecting Film for avoiding the long mist particles of photomask |
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Application publication date: 20180907 |