CN108508282A - Measuring equipment for surface potential of thin film material - Google Patents
Measuring equipment for surface potential of thin film material Download PDFInfo
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- CN108508282A CN108508282A CN201810565261.6A CN201810565261A CN108508282A CN 108508282 A CN108508282 A CN 108508282A CN 201810565261 A CN201810565261 A CN 201810565261A CN 108508282 A CN108508282 A CN 108508282A
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- 239000000463 material Substances 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims description 34
- 238000005259 measurement Methods 0.000 claims abstract description 35
- 239000000523 sample Substances 0.000 claims abstract description 24
- 238000002474 experimental method Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 8
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- 238000000034 method Methods 0.000 description 10
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- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical group FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses a measuring device for surface potential of a film material, which comprises: the test chamber is used for providing vacuum conditions for measurement and introducing various gases required by the measurement; a heating table disposed within the test chamber for providing desired temperature conditions for the measurements; a ground electrode located above and in close contact with the heating stage; the needle electrode and the grid electrode are arranged in the test box, the grid electrode is positioned between the needle electrode and the ground electrode, the needle electrode is connected with a first high-voltage power supply, and the grid electrode is connected with a second high-voltage power supply; and the electrostatic probe is arranged in the test box and is used for measuring the surface potential of the charged film material to be measured on the ground electrode. The invention has reasonable design, easy manufacture, convenient use and simple principle, can realize measurement experiments at different temperatures and in different atmospheres, and ensures the reliability of measurement results.
Description
Technical field
The present invention relates to technical field of power systems more particularly to a kind of measuring apparatus of thin-film material surface current potential.
Background technology
Space charge in polymer material generally refers to trapped charge, i.e., the electricity in medium is stayed in after being captured by trap
Lotus also can refer to the polarization charge caused by uneven polarization.The presence of space charge can generate important shadow to polymer insulation
It rings, space charge accumulation can lead to electric field distortion, cause the getting up early of dielectric to puncture, caused to electric power netting safe running huge
Safety problem.Therefore, Study Polymer Melts internal space-charge characteristic is of great significance.
The operating temperature of many polymer is not invariable, such as：Cable insulation material crosslinked polyethylene（XLPE）
And APPENDIX MATERIALSThe silicon rubber, with the variation of conductor current, the temperature born is variation, and has correlative study table
Bright, temperature has fairly obvious influence for polymer material space charge characteristic.Meanwhile the working environment of some polymer
And non-air, such as：Cable insulating in space, residing for atmosphere be vacuum, and disc insulator silastic material
Residing atmosphere is sulfur hexafluoride（SF6）.Therefore, the space charge characteristic under the conditions of different atmosphere, which is equally one, has
The research contents of practical significance.
Be presently used for characterization polymer material in distribution of space charge characteristic means and method it is more, mainly have electroacoustic
Impulse method（PEA）, photoinduction pressure pulse method（LIPP）, thermally stimulated current method（TSC）Deng.PEA can be in interface charge stress
In the case that wave is Chong Die with body space charge stress wave, the distribution of space charge in thin-film material to be measured is measured.But PEA technologies
It tests obtained space charge to be difficult to differentiate between since electrode injection or impurity ionization generate, and is difficult to provide electronics/sky
The parameters such as the trap level in cave.LIPP is mainly to need to generate the generation that laser carrys out induced pressure pulse, and usual lasing light emitter is wanted
It asks relatively high and involves great expense.TSC is when calculating trapped charge and its energy level is distributed, it is assumed that material internal trap energy level is single
Energy level form, it is relatively low to the sensitivity of trapped charge characterization although the sensitivity of TSC characterization dipole polarizations is very high.Surface
Potential decay（SPD）And a kind of technological means of space charge and distribution of traps can be characterized.SPD is a kind of to be filled using direct current
The mode of electricity studies internal electricity with the changing rule of time in the charge of material surface depositing dosed quantities by measuring charge
The method of lotus transport property and distribution of traps characteristic.In these measurement of correlation means, SPD is a kind of convenient, low expense
Measure the means of space charge and charge trap.SPD can provide charge injection, migration, relaxation, charge trap under High-Field
Equal related physicals information.It can there has been no about the SPD measuring techniques under different temperatures and different atmosphere at present.
Invention content
Technical problem to be solved by the present invention lies in the present invention provides a kind of measurement of thin-film material surface current potential
Equipment to realize the test condition under different temperatures and different atmosphere, and ensures the reliability of test result.
In order to solve the above technical problem, the present invention provides a kind of measuring apparatus of thin-film material surface current potential, including：
Chamber has two trepannings, and one of connection vacuum pump, for providing vacuum condition to measure, another is
Stomata, for being passed through the various gases needed for measuring；
Warm table in the chamber is set, for providing required temperature condition to measure；
The ground electrode being in close contact on the warm table and with the warm table；
The pin electrode and grid electrode being arranged in the chamber, the grid electrode are located at the pin electrode and the ground electricity
Between pole, the grid electrode is connected with the first high voltage power supply, and the pin electrode is connected with the second high voltage power supply；
Be arranged in the chamber electrostatic probe, for being opposite on the ground electrode, it is charged after film to be measured
Material carries out surface potential measurement.
Wherein, the grid electrode is the woven wire with equally distributed multiple mesh.
Wherein, the mesh is the squared mesh that the length of side is 1mm.
Wherein, the center of grid electrode described in the needle point face of the pin electrode, the pin electrode and the grid electrode
Distance be 5 mm, the grid electrode with the ground electrode at a distance from be 5 mm.
Wherein, the radius of curvature of the needle point of the pin electrode is 10 μm.
Wherein, described ground electrode one end ground terminal phase with first high voltage power supply and second high voltage power supply respectively
Even, the other end is connected with pull rod, and the pull rod is used for after thin-film material charging complete to be measured, and the mobile ground electrode will wait for
It surveys thin-film material and is moved to electrostatic probe lower section progress surface potential measurement.
Wherein, the electrostatic probe is 6 mm at a distance from the ground electrode being moved to below.
Wherein, the electrostatic probe is connected by signal wire with the electrometer outside the chamber.
Wherein, the electrometer is connected with computer, is used for the data transmission of the electrostatic probe measurement to institute
Computer is stated to be recorded.
Wherein, also there is gas-pressure survey meter, for measuring in real time and showing the gas in the chamber in the chamber
Pressure value.
The advantageous effect of the embodiment of the present invention is：It has built a kind of for measuring thin-film material under different temperatures and atmosphere
The measuring apparatus of surface potential realizes different atmosphere and the measurement experiment under different temperatures using close test case and warm table；
Gas-pressure survey meter can ensure that the air pressure measured every time is consistent；The high-resolution of electrostatic probe, ensures the standard of measurement data
It is really reliable；The measuring apparatus reasonable design, easy to manufacture, easy to use, principle is simple, and different temperatures and different gas may be implemented
Measurement experiment under atmosphere, and ensure the reliability of measurement result.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of the measuring apparatus of thin-film material surface current potential of the embodiment of the present invention.
Fig. 2 is the position relationship schematic diagram of pin electrode, grid electrode and ground electrode in the embodiment of the present invention.
Fig. 3 is the overlooking structure diagram of grid electrode in the embodiment of the present invention.
Fig. 4 is the position relationship schematic diagram of electrostatic probe and ground electrode in the embodiment of the present invention.
Specific implementation mode
The explanation of following embodiment is refer to the attached drawing, can be to the specific embodiment implemented to the example present invention.
It please referring to shown in Fig. 1, the embodiment of the present invention provides a kind of measuring apparatus of thin-film material surface current potential, including：
Chamber has two trepannings, and one of connection vacuum pump, for providing vacuum condition to measure, another is
Stomata, for being passed through the various gases needed for measuring；
Warm table in the chamber is set, for providing required temperature condition to measure；
The ground electrode being in close contact on the warm table and with the warm table；
The pin electrode and grid electrode being arranged in the chamber, the grid electrode are located at the pin electrode and the ground electricity
Between pole, the grid electrode is connected with the first high voltage power supply, and the pin electrode is connected with the second high voltage power supply, and described first is high
Voltage source is used for output cathode high pressure, and second high voltage power supply is used for output negative pole high pressure；
Be arranged in the chamber electrostatic probe, for being opposite on the ground electrode, it is charged after film to be measured
Material carries out surface potential measurement.
Specifically, in the present embodiment, there are two trepannings in chamber 1, and a connection vacuum pump 2, another is air admission hole
3, by 2 forvacuum of vacuum pump, after different types of gas is passed through, it can be achieved that vacuum and different atmosphere by air admission hole 3
Under measurement experiment.Also there is gas-pressure survey meter 4 in chamber 1, can measure in real time and show the atmospheric pressure value in chamber 1.
The measurement range of gas-pressure survey meter 4 is 0-100hpa, and resolution ratio 0.01hpa, precision is ± 0.05hpa.Warm table 10 can be real
Now become temperature measurement, temperature-control range is 20-300 DEG C, and resolution ratio is 1 DEG C, and accuracy of temperature control is ± 1 DEG C.The outside of chamber 1 is set respectively
There is two-way high voltage power supply, wherein the first high voltage power supply 5 is connected by high-voltage conducting wires with the grid electrode 8 in chamber 1, and second
High voltage power supply 6 is connected by high-voltage conducting wires with the pin electrode 7 in chamber 1, and the first high voltage power supply 5 is used to be that grid electrode 8 is defeated
Go out bias, the second high voltage power supply 6 is used for as the output charging high pressure of pin electrode 7.The material of pin electrode 7 and grid electrode 8 is to lead
The radius of curvature of electric metal, preferably stainless steel, pin electrode 7 is 10 μm.
The material of ground electrode 9 is also conductive metal, preferably aluminium.Warm table 10 is in close contact with ground electrode 9, it can be achieved that temperature
Accurately control, temperature-control range be 20-300 DEG C, resolution ratio be 1 DEG C, accuracy of temperature control be ± 1 DEG C.Electrostatic probe 11 can be to be measured
Thin-film material surface current potential is measured in real time, resolution ratio 1V.1 exterior static potentiometer 12 of chamber and 13 phase of computer
Even, collected data transmission to computer is recorded.
The position relationship schematic diagram of pin electrode 7, grid electrode 8 and ground electrode 9 is as shown in Fig. 2, pin electrode 7 and aperture plate electricity
The distance of pole 8 is 5 mm, and grid electrode 8 is 5 mm at a distance from ground electrode 9, and 7 needle point of pin electrode faces in grid electrode 8
The heart.In the measurement process of the contrast experiment of same a batch thin-film material to be measured, it need to ensure pin electrode 7 at a distance from grid electrode 8
Constant, grid electrode 8 is constant at a distance from ground electrode 9.In the present embodiment, grid electrode 8 is with equally distributed multiple nets
The woven wire in hole, the stainless steel cloth preferably tightened, shape are circle, and mesh is preferably the square net that the length of side is 1mm
Hole, as shown in Figure 3.It should be noted that if mesh is excessive, the Potential distribution of thin-film material surface to be measured can be caused uneven
It is even, and mesh is too small can cause charge that cannot deposit to thin-film material surface to be measured well, therefore, 1mm is arranged in the present embodiment
The squared mesh of × 1mm is suitable.
Ground electrode 9 is close at thin-film material back to be measured, is placed on immediately below pin electrode 7 and grid electrode 8 and charges, charges
After a certain period of time, thin-film material to be measured is quickly moved to the measurement that surface potential is carried out immediately below electrostatic probe 11, electrostatic probe
11 are connected by signal wire with the electrometer 12 outside chamber 1, and collected signal is passed by electrometer 12
It transports on computer 13 and is recorded.9 one end of ground electrode ground terminal with the first high voltage power supply 5 and the second high voltage power supply 6 respectively
It is connected, the other end is connected with pull rod 14, and pull rod 14 is used for after thin-film material charging complete to be measured, mobile ground electrode 9, will be to be measured
Thin-film material is moved to 11 lower section of electrostatic probe and carries out surface potential measurement.Electrostatic probe 11 be moved to ground electrode below
9 distance is 6 mm, as shown in Figure 4.Electrostatic probe 11 is needed just can be to thin-film material to be measured within the scope of a certain distance
Surface potential measures, and distance cannot achieve greatly very much accurate measurement, and hypotelorism, in the process of movement thin-film material to be measured
In be easy to happen collision, therefore the present embodiment selection 6mm this more suitable distance.Also, in same a batch film material to be measured
In the measurement process of the contrast experiment of material, it need to ensure that electrostatic probe 11 is constant at a distance from ground electrode 9.
In addition, the first high voltage power supply 5 and the second high voltage power supply 6 respectively have two-way output, respectively positive polarity output with
Negative polarity exports, and the charging of opposed polarity can be carried out to thin-film material to be measured.
The measurement process and principle of the measuring apparatus of the present embodiment thin-film material surface current potential are as follows：
Before measurement can by 2 forvacuum of vacuum pump, after different types of gas is passed through by air admission hole 3, realize vacuum and
Measurement experiment under different atmosphere.Ground electrode 9 and thin-film material to be measured are heated by warm table 10, realize not equality of temperature
Experiment under degree measures.After setting temperature and atmosphere, ground electrode 9 is close at thin-film material back to be measured and is placed on grid electrode
8 lower sections apply charging high pressure and bias to pin electrode 7 and grid electrode 8 respectively, corona occur at the tip position of pin electrode 7
It discharges and generates a large amount of charged particle, since the presence of grid electrode 8 so that electric field compares between pin electrode 7 and ground electrode 9
Uniformly, charged particle moves to the surface of thin-film material to be measured under more uniform electric field, to the surface of thin-film material to be measured into
Row charging.Charging after a certain period of time, closes two-way high voltage power supply, terminates charging.After charging complete, need thin-film material to be measured
It is moved to 11 lower section of electrostatic probe and carries out surface potential measurement, but be sealing since chamber 1 is whole, chamber cannot be opened
1 people is movement, for this purpose, the present embodiment is provided with special mobile mechanism, i.e. pull rod 14, the material of pull rod 14 is epoxy resin.
Ground electrode 9 is moved by pull rod 14, the ground electrode 9 for carrying thin-film material to be measured is moved to rapidly under electrostatic probe 11
The real-time measurement of Fang Jinhang surface potentials, setting measurement time automatically record experimental data by computer 13.When aforementioned charging
Between length selected according to specific thin-film material to be measured, for the same a batch thin-film material to be measured to be compared, measurement
When should be ensured that the charging time is consistent.
By above description it is found that the advantageous effect that the embodiment of the present invention is brought is：It has built a kind of for measuring not
The measuring apparatus of thin-film material surface current potential under synthermal and atmosphere, using close test case and warm table realize different atmosphere with
Measurement experiment under different temperatures；Gas-pressure survey meter can ensure that the air pressure measured every time is consistent；The high score of electrostatic probe
Resolution ensures the accurate and reliable of measurement data；The measuring apparatus reasonable design, easy to manufacture, easy to use, principle is simple, can be with
It realizes the measurement experiment under different temperatures and different atmosphere, and ensures the reliability of measurement result.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, therefore equivalent changes made in accordance with the claims of the present invention, is still within the scope of the present invention.
Claims (10)
1. a kind of measuring apparatus of thin-film material surface current potential, which is characterized in that including：
Chamber has two trepannings, and one of connection vacuum pump, for providing vacuum condition to measure, another is
Stomata, for being passed through the various gases needed for measuring；
Warm table in the chamber is set, for providing required temperature condition to measure；
The ground electrode being in close contact on the warm table and with the warm table；
The pin electrode and grid electrode being arranged in the chamber, the grid electrode are located at the pin electrode and the ground electricity
Between pole, the grid electrode is connected with the first high voltage power supply, and the pin electrode is connected with the second high voltage power supply；
Be arranged in the chamber electrostatic probe, for being opposite on the ground electrode, it is charged after film to be measured
Material carries out surface potential measurement.
2. measuring apparatus according to claim 1, which is characterized in that the grid electrode is with equally distributed multiple
The woven wire of mesh.
3. measuring apparatus according to claim 2, which is characterized in that the mesh is the squared mesh that the length of side is 1mm.
4. measuring apparatus according to claim 2, which is characterized in that grid electrode described in the needle point face of the pin electrode
Center, the pin electrode at a distance from the grid electrode be 5 mm, the grid electrode with the ground electrode at a distance from be 5
mm。
5. measuring apparatus according to claim 4, which is characterized in that the radius of curvature of the needle point of the pin electrode is 10 μ
m。
6. measuring apparatus according to claim 1, which is characterized in that described ground electrode one end respectively with first high pressure
Power supply is connected with the ground terminal of second high voltage power supply, and the other end is connected with pull rod, and the pull rod is used in film material to be measured
After expecting charging complete, thin-film material to be measured is moved to electrostatic probe lower section and carries out surface potential by the mobile ground electrode
It measures.
7. measuring apparatus according to claim 6, which is characterized in that electrostatic probe be moved to below described
The distance of ground electrode is 6 mm.
8. measuring apparatus according to claim 1, which is characterized in that the electrostatic probe passes through signal wire and the experiment
Electrometer outside case is connected.
9. measuring apparatus according to claim 8, which is characterized in that the electrometer is connected with computer, is used for
The data transmission of the electrostatic probe measurement to the computer is recorded.
10. measuring apparatus according to claim 1, which is characterized in that also there is gas-pressure survey meter in the chamber, use
In measuring in real time and show the atmospheric pressure value in the chamber.
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| CN201810565261.6A CN108508282A (en) | 2018-06-04 | 2018-06-04 | Measuring equipment for surface potential of thin film material |
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| CN201810565261.6A CN108508282A (en) | 2018-06-04 | 2018-06-04 | Measuring equipment for surface potential of thin film material |
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Cited By (5)
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| CN110132835A (en) * | 2019-05-30 | 2019-08-16 | 西南交通大学 | A kind of composite insulating material insulation degradation assessment system and experimental method |
| CN110794276A (en) * | 2019-12-19 | 2020-02-14 | 南京中鸿润宁新材料科技有限公司 | Corona resistance performance detection method for polyimide composite film material |
| CN112305326A (en) * | 2019-07-31 | 2021-02-02 | 中国科学院国家空间科学中心 | Device for measuring surface potential of moon in place |
| CN112332221A (en) * | 2020-11-11 | 2021-02-05 | 北京英华高科技环保有限公司 | Electret charged restoration equipment and method |
| CN114236196A (en) * | 2022-02-26 | 2022-03-25 | 合肥航太电物理技术有限公司 | Electrostatic discharge test system of multifunctional program-controlled adjustable electrode |
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| CN112332221A (en) * | 2020-11-11 | 2021-02-05 | 北京英华高科技环保有限公司 | Electret charged restoration equipment and method |
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