CN108508083A - The intelligent heavy metal ion specific detection instrument for effect of being shaken based on magnetic - Google Patents
The intelligent heavy metal ion specific detection instrument for effect of being shaken based on magnetic Download PDFInfo
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- CN108508083A CN108508083A CN201810254596.6A CN201810254596A CN108508083A CN 108508083 A CN108508083 A CN 108508083A CN 201810254596 A CN201810254596 A CN 201810254596A CN 108508083 A CN108508083 A CN 108508083A
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Abstract
The intelligent heavy metal ion specific detection instrument for effect of shaking the present invention is based on magnetic belongs to the intelligent heavy metal ion specific detection engineering device technique field for effect of shaking based on magnetic；Technical problem to be solved is：Offer is a kind of simple in structure, has the intelligent heavy metal ion specific detection instrument of the quickly effect of shaking based on magnetic of detection heavy metal ion content；Solve the technical solution that the technical problem uses for：Including test side and control terminal, the test side is pen cover type structure, and control terminal is penholder type structure, and the test side is sleeved on one end of control terminal；The test side is internally provided with the first vibration module, and the shell of the test side is made by magnetoelasticity metal material, and the case surface of the test side is additionally provided with one layer of test paper；The control terminal is internally provided with the second vibration module, central controller, data memory module and wireless communication module, and the case surface of the control terminal is provided with LED display, LED light；The present invention is applied to the place of detection of heavy metal ion.
Description
Technical field
The intelligent heavy metal ion specific detection instrument for effect of shaking the present invention is based on magnetic, belongs to the intelligence for effect of shaking based on magnetic
Heavy metal ion specific detection engineering device technique field.
Background technology
Heavy metal pollution is presently the most severe one of problem of environmental pollution, after heavy metal contaminants enter human body, because
Its elimination half-time is long, can cause to accumulate, and the metabolism of human normal will be seriously affected when being more than a certain concentration in vivo, causes each
The generation of kind disease；China's heavy metal pollution problem is especially prominent, and the control and improvement of heavy metal pollution are extremely urgent, and prevent
The important work of heavy metal pollution one of which is exactly that the heavy metal substance content in waste discharge is reduced or removed, and makes waste water
Qualified discharge.
It is currently used that heavy metal method in water removal is gone mainly to have：Absorption method, chemical precipitation method, redox facture,
Membrane separation process, ion-exchange treatment method etc..Wherein absorption method with it efficiently, economic, easy, good selective and it is extensive
Using having developed a variety of sorbing materials for removing heavy metal exceeded in waste water, such as activated carbon, trade waste, mine
Species adsorbent Yao's biological adsorption agent etc., but most of sorbing material has the shortcomings that generating secondary pollution, is especially adsorbing
Cheng Hou, adsorbent are difficult to realize with waste water and quickly and effectively detach, this problem is also exactly urgently to be resolved hurrily in Industrial Waste Water Treatments
One of problem；And the exploitation of magnetic adsorptive material makes adsorbent is realized with waste water under external magnetic field quickly and effectively to divide
From being possibly realized, thus starts to be widely studied and apply；With the rapid development of nano science, various magnetism are received
Rice material is successfully synthesized, and starts to be applied to solve environmental pollution, such as accelerates condensation, the removal radioactive nucleus of sewage
Element, absorption organic dyestuff, the contaminated soil and groundwater of reparation etc., there are many magnetic Nano material type, medium cloud algae, nanometer
Particle is extensive due to preparation process relative ease, inexpensive, less toxic, structure and function predictability, Modulatory character the advantages that
Concern.
Currently used detection of heavy metal ion technology has atomic absorption spectrography (AAS), Anodic leaching, inductance coupling
Plasma emlssion spectrometry, inductively coupled plasma mass spectrometry etc. are closed, although these method accuracy of detection and stability are all
Preferably, but there is the problems such as depending on large-scale instrument and equipment, sample treatment complexity and time are long, cannot be satisfied live quickly inspection
The demand of survey.
Invention content
The present invention is to overcome the shortcomings of the prior art, technical problem to be solved：A kind of structure letter is provided
It is single, have the intelligent heavy metal ion specific detection instrument of the quickly effect of shaking based on magnetic of detection heavy metal ion content；In order to
Above-mentioned technical problem is solved, the technical solution adopted by the present invention is：The intelligent heavy metal ion specificity inspection for effect of being shaken based on magnetic
Instrument, including test side and control terminal are surveyed, the test side is pen cover type structure, and control terminal is penholder type structure, the test side
It is sleeved on one end of control terminal；
The test side is internally provided with the first vibration module, and the shell of the test side is made by magnetoelasticity metal material,
The case surface of the test side is additionally provided with one layer of test paper；
The control terminal is internally provided with the second vibration module, central controller, data memory module and wireless communication module,
The case surface of the control terminal is provided with LED display, LED light；
The signal input part of the central controller is connected with the output end of the first vibration module and the second vibration module respectively, institute
The signal output end for stating central controller is connected with LED display, LED light respectively, and the central controller is also by leading
Line is connected with data memory module, wireless communication module respectively；
The wireless communication module is connected by wireless network with monitoring computer；
It is additionally provided with amplifier between first vibration module and central controller and follows module and DC conversion modules, described
One vibration module is sequentially connected in series after amplifier follows module, DC conversion modules to be connected with central controller.
The circuit structure of first vibration module is：
The chip that first vibration module uses is frequency synthesis chip U1, and the chip that the central controller uses is center
Control chip U6；
2 feet of the frequency synthesis chip U1 are grounded；
It is connected with 4 feet of frequency synthesis chip U1 behind 3 feet of the frequency synthesis chip U1 and one end of connecting resistance R1, the electricity
Hinder another termination 5V input powers of R1；
5 feet of the frequency synthesis chip U1 are grounded；
6 feet of the frequency synthesis chip U1 connect 5V input powers；
7 feet of the frequency synthesis chip U1 are connected with 55 feet of central control chip U6；
8 feet of the frequency synthesis chip U1 are connected with 56 feet of central control chip U6；
It is connected with crystal oscillator X1 after the 9 foot series resistor R4 of the frequency synthesis chip U1；
10 feet of the frequency synthesis chip U1 are grounded；
11 feet of the frequency synthesis chip U1 connect 5V input powers；
It is grounded after the 12 foot series resistor R6 of the frequency synthesis chip U1；
It is grounded after the 17 foot serial capacitance C1 of the frequency synthesis chip U1；
18 feet of the frequency synthesis chip U1 connect 5V input powers；
19 feet of the frequency synthesis chip U1 are grounded；
It is connected with one end of capacitance C20 behind 20 feet of the frequency synthesis chip U1 and one end of connecting resistance R5, the frequency is closed
It is connected with one end of capacitance C17 at after 21 feet of chip U1 and one end of connecting resistance R3, the other end of the resistance R3 simultaneously connects electricity
It is grounded after hindering the other end of R5；
22 feet of the frequency synthesis chip U1 are connected with 58 feet of central control chip U6；
23 feet of the frequency synthesis chip U1 connect 5V input powers；
24 feet of the frequency synthesis chip U1 are grounded；
25 feet of the frequency synthesis chip U1 are connected with 57 feet of central control chip U6.
The amplifier follows the circuit structure of module to be：
The chip that the amplifier follows module to use is amplifier chip U2 and U3；
The other end of the capacitance C17 is connected with one end of resistance R25, the other end of the resistance R25 and the one of connecting resistance R23
Be connected with 2 feet of amplifier chip U2 behind end, behind one end of 3 feet of the amplifier chip U2 and connecting resistance R27 with resistance R28 one
End is connected, another termination 3.3V input powers of the resistance R27, the other end ground connection of the resistance R28, the resistance R23
The other end be connected with 1 foot of amplifier chip U2,8 feet of the amplifier chip U2 connect 3.3V input powers；
5 foot phases after 1 foot of the amplifier chip U2 and one end of connecting resistance R24, one end of resistance R26 with amplifier chip U2
Even, another termination 3.3V input powers of the resistance R24, the other end ground connection of the resistance R26；
6 feet of the amplifier chip U2 are simultaneously connected after being connected to the anode of electrode capacitance C18 with 7 feet of amplifier chip U2；
The other end of the capacitance C20 is connected with one end of resistance R31, the other end of the resistance R31 and the one of connecting resistance R29
Be connected with 2 feet of amplifier chip U3 behind end, behind one end of 3 feet of the amplifier chip U3 and connecting resistance R33 with resistance R34 one
End is connected, another termination 3.3V input powers of the resistance R33, the other end ground connection of the resistance R34, the resistance R29
The other end be connected with 1 foot of amplifier chip U3,8 feet of the amplifier chip U3 connect 3.3V input powers；
5 foot phases after 1 foot of the amplifier chip U3 and one end of connecting resistance R30, one end of resistance R32 with amplifier chip U3
Even, another termination 3.3V input powers of the resistance R30, the other end ground connection of the resistance R32；
6 feet of the amplifier chip U3 are simultaneously connected after being connected to the anode of electrode capacitance C21 with 7 feet of amplifier chip U3.
The circuit structure of the DC conversion modules is：
The chip that the DC conversion modules use is that virtual value turns direct current chip U4 and U5；
1 foot that the virtual value turns direct current chip U4 is connected with there is the cathode of electrode capacitance C18；
3 feet that the virtual value turns direct current chip U4 connect -5V input powers；
4 feet that the virtual value turns direct current chip U4 are connected with there is the cathode of electrode capacitance C16；
The virtual value turns 6 feet of direct current chip U4 and is connected with 14 feet of central control chip U6；
7 feet that the virtual value turns direct current chip U4 turn 8 feet of direct current chip U4 with virtual value and are connected；
The virtual value turns 9 feet of direct current chip U4 and is connected to after valid value turns 10 feet of direct current chip U4 to be grounded；
The virtual value turns 14 feet of direct current chip U4 and is connected to the anode of electrode capacitance C16 to be followed by 5V input powers；
1 foot that the virtual value turns direct current chip U5 is connected with there is the cathode of electrode capacitance C21；
3 feet that the virtual value turns direct current chip U5 connect -5V input powers；
4 feet that the virtual value turns direct current chip U5 are connected with there is the cathode of electrode capacitance C19；
The virtual value turns 6 feet of direct current chip U5 and is connected with 15 feet of central control chip U6；
7 feet that the virtual value turns direct current chip U5 turn 8 feet of direct current chip U5 with virtual value and are connected；
The virtual value turns 9 feet of direct current chip U5 and is connected to after valid value turns 10 feet of direct current chip U5 to be grounded；
The virtual value turns 14 feet of direct current chip U5 and is connected to the anode of electrode capacitance C19 to be followed by 5V input powers.
The circuit structure of the central controller is：
16 feet of the central control chip U6 are connected with one end of resistance R21, the other end and connecting resistance of the resistance R21
It is connected with the base stage of triode Q2 behind one end of R22, the other end of the emitter of the triode Q2 and connecting resistance R22 are followed by
Ground, the collector of the triode Q2 are simultaneously connected after connecing the anode of diode D5 with one end of resistance R20, the resistance R20's
It is connected with the grid of metal-oxide-semiconductor Q1 behind one end of the other end and connecting resistance R19, the other end of the resistance R19 simultaneously connects metal-oxide-semiconductor Q1's
It is connected with 1 foot of central control chip U6 after source electrode, the drain electrode of the metal-oxide-semiconductor Q1 is sequentially connected in series resistance R18 and light emitting diode
It is grounded after D3；
The cathode of the diode D5 is simultaneously connected after connecing the cathode of diode D4 with circuit general switch kPower, the diode D4
Anode be connected with 17 feet of central control chip U6；
5 feet of the central control chip U6 are simultaneously connected after connecing one end of crystal oscillator Y1 with one end of capacitance C7, the center control
6 feet of chip U6 are simultaneously connected after connecing the other end of crystal oscillator Y1 with one end of capacitance C8, the other end shunt-wound capacitance of the capacitance C7
It is grounded after the other end of C8；
It is grounded after the 60 foot series resistor R12 of the central control chip U6；
It is connected with one end of capacitance C9 behind 7 feet of the central control chip U6 and one end of connecting resistance R13, the resistance R13
Another termination 3.3V input powers, the capacitance C9 the other end ground connection；
1 foot of the central control chip U6 successively and connect 32 feet of central control chip U6,48 feet, 64 feet, 19 feet, 13 feet,
One end of capacitance C13, one end of capacitance C12, one end of capacitance C11, capacitance C10 one end after be connected with 3.3V input powers,
The other end of described capacitance C13, C12, C11, C10 are grounded；
31 feet, 47 feet, 63 feet, 18 feet, 12 feet of the central control chip U6 are grounded.
The model AD9850 of the frequency synthesis chip U1, the model AD8606 of the amplifier chip U2 and U3, institute
State the model AD536 that virtual value turns direct current chip U4 and U5, the model of the central control chip U6
STM32F103R6T6。
What the present invention had compared with the existing technology has the beneficial effect that：The present invention provides a kind of intelligence for effect of shaking based on magnetic
Magnetoelasticity metal material and vibration module is arranged in testing liquid in its test side in heavy metal ion specific detection instrument device
Concentration of heavy metal ion is detected, and by the way that the vibration frequency of standard sample and sample to be tested is calculated and be shown, obtains vibration
The offset of frequency, the concentration of further quantitative analysis solution to be measured；The configuration of the present invention is simple, easy to use, Data Detection is fast
It is fast accurate, can meet the needs of field quick detection concentration of heavy metal ion, be worth of widely use.
Description of the drawings
The present invention will be further described below in conjunction with the accompanying drawings：
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the electrical block diagram of the present invention；
Fig. 3 is the circuit diagram of the first vibration module of the invention；
Fig. 4 is the circuit diagram that amplifier of the present invention follows module；
Fig. 5 is the circuit diagram of DC conversion modules of the present invention；
Fig. 6 is the circuit diagram of central controller of the present invention；
In figure：1 is that test side, 2 hold, 3 are the first vibration module, 4 are the second vibration module, 5 are central controller, 6 in order to control
It is wireless communication module for data memory module, 7,8 be LED display, 9 be LED light, 10 be monitoring computer, 11 is
It is DC conversion modules that amplifier, which follows module, 12,.
Specific implementation mode
As shown in Figures 1 to 6, the intelligent heavy metal ion specific detection instrument for effect of shaking the present invention is based on magnetic, including inspection
End 1 and control terminal 2 are surveyed, the test side 1 is pen cover type structure, and control terminal 2 is penholder type structure, and the test side 1 is sleeved on control
The one end at end 2 processed；
The test side 1 is internally provided with the first vibration module 3, and the shell of the test side 1 is by magnetoelasticity metal material system
Make, the case surface of the test side 1 is additionally provided with one layer of test paper；
The control terminal 2 is internally provided with the second vibration module 4, central controller 5, data memory module 6 and wireless communication
The case surface of module 7, the control terminal 2 is provided with LED display 8, LED light 9；
The signal input part of the central controller 5 output end phase with the first vibration module 3 and the second vibration module 4 respectively
Even, the signal output end of the central controller 5 is connected with LED display 8, LED light 9 respectively, the central controller 5
Also it is connected respectively with data memory module 6, wireless communication module 7 by conducting wire；
The wireless communication module 7 is connected by wireless network with monitoring computer 10；
It is additionally provided with amplifier between first vibration module 3 and central controller 5 and follows module 11 and DC conversion modules 12,
First vibration module 3 is sequentially connected in series after amplifier follows module 11, DC conversion modules 12 to be connected with central controller 5.
The circuit structure of first vibration module 3 is：
The chip that first vibration module 3 uses is frequency synthesis chip U1, during the chip that the central controller 5 uses is
Centre control chip U6；
2 feet of the frequency synthesis chip U1 are grounded；
It is connected with 4 feet of frequency synthesis chip U1 behind 3 feet of the frequency synthesis chip U1 and one end of connecting resistance R1, the electricity
Hinder another termination 5V input powers of R1；
5 feet of the frequency synthesis chip U1 are grounded；
6 feet of the frequency synthesis chip U1 connect 5V input powers；
7 feet of the frequency synthesis chip U1 are connected with 55 feet of central control chip U6；
8 feet of the frequency synthesis chip U1 are connected with 56 feet of central control chip U6；
It is connected with crystal oscillator X1 after the 9 foot series resistor R4 of the frequency synthesis chip U1；
10 feet of the frequency synthesis chip U1 are grounded；
11 feet of the frequency synthesis chip U1 connect 5V input powers；
It is grounded after the 12 foot series resistor R6 of the frequency synthesis chip U1；
It is grounded after the 17 foot serial capacitance C1 of the frequency synthesis chip U1；
18 feet of the frequency synthesis chip U1 connect 5V input powers；
19 feet of the frequency synthesis chip U1 are grounded；
It is connected with one end of capacitance C20 behind 20 feet of the frequency synthesis chip U1 and one end of connecting resistance R5, the frequency is closed
It is connected with one end of capacitance C17 at after 21 feet of chip U1 and one end of connecting resistance R3, the other end of the resistance R3 simultaneously connects electricity
It is grounded after hindering the other end of R5；
22 feet of the frequency synthesis chip U1 are connected with 58 feet of central control chip U6；
23 feet of the frequency synthesis chip U1 connect 5V input powers；
24 feet of the frequency synthesis chip U1 are grounded；
25 feet of the frequency synthesis chip U1 are connected with 57 feet of central control chip U6.
The amplifier follows the circuit structure of module 11 to be：
The chip that the amplifier follows module 11 to use is amplifier chip U2 and U3；
The other end of the capacitance C17 is connected with one end of resistance R25, the other end of the resistance R25 and the one of connecting resistance R23
Be connected with 2 feet of amplifier chip U2 behind end, behind one end of 3 feet of the amplifier chip U2 and connecting resistance R27 with resistance R28 one
End is connected, another termination 3.3V input powers of the resistance R27, the other end ground connection of the resistance R28, the resistance R23
The other end be connected with 1 foot of amplifier chip U2,8 feet of the amplifier chip U2 connect 3.3V input powers；
5 foot phases after 1 foot of the amplifier chip U2 and one end of connecting resistance R24, one end of resistance R26 with amplifier chip U2
Even, another termination 3.3V input powers of the resistance R24, the other end ground connection of the resistance R26；
6 feet of the amplifier chip U2 are simultaneously connected after being connected to the anode of electrode capacitance C18 with 7 feet of amplifier chip U2；
The other end of the capacitance C20 is connected with one end of resistance R31, the other end of the resistance R31 and the one of connecting resistance R29
Be connected with 2 feet of amplifier chip U3 behind end, behind one end of 3 feet of the amplifier chip U3 and connecting resistance R33 with resistance R34 one
End is connected, another termination 3.3V input powers of the resistance R33, the other end ground connection of the resistance R34, the resistance R29
The other end be connected with 1 foot of amplifier chip U3,8 feet of the amplifier chip U3 connect 3.3V input powers；
5 foot phases after 1 foot of the amplifier chip U3 and one end of connecting resistance R30, one end of resistance R32 with amplifier chip U3
Even, another termination 3.3V input powers of the resistance R30, the other end ground connection of the resistance R32；
6 feet of the amplifier chip U3 are simultaneously connected after being connected to the anode of electrode capacitance C21 with 7 feet of amplifier chip U3.
The circuit structure of the DC conversion modules 12 is：
The chip that the DC conversion modules 12 use is that virtual value turns direct current chip U4 and U5；
1 foot that the virtual value turns direct current chip U4 is connected with there is the cathode of electrode capacitance C18；
3 feet that the virtual value turns direct current chip U4 connect -5V input powers；
4 feet that the virtual value turns direct current chip U4 are connected with there is the cathode of electrode capacitance C16；
The virtual value turns 6 feet of direct current chip U4 and is connected with 14 feet of central control chip U6；
7 feet that the virtual value turns direct current chip U4 turn 8 feet of direct current chip U4 with virtual value and are connected；
The virtual value turns 9 feet of direct current chip U4 and is connected to after valid value turns 10 feet of direct current chip U4 to be grounded；
The virtual value turns 14 feet of direct current chip U4 and is connected to the anode of electrode capacitance C16 to be followed by 5V input powers；
1 foot that the virtual value turns direct current chip U5 is connected with there is the cathode of electrode capacitance C21；
3 feet that the virtual value turns direct current chip U5 connect -5V input powers；
4 feet that the virtual value turns direct current chip U5 are connected with there is the cathode of electrode capacitance C19；
The virtual value turns 6 feet of direct current chip U5 and is connected with 15 feet of central control chip U6；
7 feet that the virtual value turns direct current chip U5 turn 8 feet of direct current chip U5 with virtual value and are connected；
The virtual value turns 9 feet of direct current chip U5 and is connected to after valid value turns 10 feet of direct current chip U5 to be grounded；
The virtual value turns 14 feet of direct current chip U5 and is connected to the anode of electrode capacitance C19 to be followed by 5V input powers.
The circuit structure of the central controller 5 is：
16 feet of the central control chip U6 are connected with one end of resistance R21, the other end and connecting resistance of the resistance R21
It is connected with the base stage of triode Q2 behind one end of R22, the other end of the emitter of the triode Q2 and connecting resistance R22 are followed by
Ground, the collector of the triode Q2 are simultaneously connected after connecing the anode of diode D5 with one end of resistance R20, the resistance R20's
It is connected with the grid of metal-oxide-semiconductor Q1 behind one end of the other end and connecting resistance R19, the other end of the resistance R19 simultaneously connects metal-oxide-semiconductor Q1's
It is connected with 1 foot of central control chip U6 after source electrode, the drain electrode of the metal-oxide-semiconductor Q1 is sequentially connected in series resistance R18 and light emitting diode
It is grounded after D3；
The cathode of the diode D5 is simultaneously connected after connecing the cathode of diode D4 with circuit general switch kPower, the diode D4
Anode be connected with 17 feet of central control chip U6；
5 feet of the central control chip U6 are simultaneously connected after connecing one end of crystal oscillator Y1 with one end of capacitance C7, the center control
6 feet of chip U6 are simultaneously connected after connecing the other end of crystal oscillator Y1 with one end of capacitance C8, the other end shunt-wound capacitance of the capacitance C7
It is grounded after the other end of C8；
It is grounded after the 60 foot series resistor R12 of the central control chip U6；
It is connected with one end of capacitance C9 behind 7 feet of the central control chip U6 and one end of connecting resistance R13, the resistance R13
Another termination 3.3V input powers, the capacitance C9 the other end ground connection；
1 foot of the central control chip U6 successively and connect 32 feet of central control chip U6,48 feet, 64 feet, 19 feet, 13 feet,
One end of capacitance C13, one end of capacitance C12, one end of capacitance C11, capacitance C10 one end after be connected with 3.3V input powers,
The other end of described capacitance C13, C12, C11, C10 are grounded；
31 feet, 47 feet, 63 feet, 18 feet, 12 feet of the central control chip U6 are grounded.
The model AD9850 of the frequency synthesis chip U1, the model AD8606 of the amplifier chip U2 and U3, institute
State the model AD536 that virtual value turns direct current chip U4 and U5, the model of the central control chip U6
STM32F103R6T6。
The present invention testing principle be：Functionalization process is carried out on the magnetoelastic material surface of test side 1, can examined
Survey in the surface modification at end 1 and be capable of the nano-functional material of specific adsorption heavy metal, when test side 1 coat heavy metal to be measured from
After sub- solution, with heavy metal ion association reaction will occur for the nano material on magnetoelasticity test paper surface, make magnetoelastic material and
The quality of its area load object entirety changes, and mass change can cause the vibration frequency of magnetoelastic material itself to be floated
It moves, the first vibration module 3 detection numerical value being arranged inside test side 1 can change, and pass through analysis the first vibration mould at this time
The normal vibration frequency of the drift vibration frequency of block 3 and the second vibration module 4 being arranged in control terminal 2, you can be calculated
The concentration of heavy metal ion solution to be measured.
The structure of detection pen is made in test side 1 and control terminal 2 by the present invention, keeps its easy to use, ensures the accurate of detection
Property with high-precision, the middle part setting of the control terminal 2 can show standard sample and detect sample there are one LED display 8
Vibration frequency, and show the offset that vibration frequency is calculated, the concentration of further quantitative analysis solution to be measured；The LED
The lower section of display screen 8 is also set up there are two button and indicator light, and one is switch button, and one is to measure button, when pressing out
Button is closed, detection pen booting, LED display curtain is bright, then presses measurement button, and detection pen can start to detect vibration frequency；
The end of the control terminal is additionally provided with battery compartment, entire control circuit can be given to power.
The frequency synthesis chip U1 uses model AD9850, and chip U1's has been internally integrated AC signal generator,
The ac-excited signal needed for magnetoelastic sensor can be generated, exported by 20 feet of chip U1 and 21 feet, the resistance R3 and
Resistance R5 is pull down resistor, and effect is protection circuit；6 feet of the chip U1 connect 5V input powers, chip U1 can be given to supply
Electricity；7 feet of the chip U1 are load clock, connect central controller 5, and the effect of this clock is for loading serial frequency；Institute
9 feet for stating chip U1 connect 125M crystal oscillators, and effect is input reference clock, the rising edge start-up operation of the clock；Above-mentioned design
The quantity and circuit board volume of discrete device are greatly reduced, and improves detection device global reliability and measurement accuracy.
It is connected with the positive input pin 2 of chip U2 after 21 foot serial capacitance C17, the resistance R25 of the chip U1, reversely
Input pin 3 accesses between resistance R27 and resistance R28, and the resistance R27 mono- terminates 3.3V input powers, one end of resistance R28
Ground connection, resistance R27, R28 used herein play the role of partial pressure；The 1 connecting resistance R23's of output pin of the chip U2
The other end of one end, R23 takes back the pin 2 of chip U2, composition ratio operational amplifier；
Meanwhile the pin 1 of chip U2 connects the pin 5 of chip U2, is gone back between the pin 1 and pin 5 and is connected to resistance R24 and electricity
Hinder R26, in addition the one end resistance R24 access 3.3V input powers, the 3.3V input powers, resistance R24, resistance R26 work
With the addition of waveforms for being to provide bias voltage and amplifier generation, waveform of being more convenient for can be in liquid crystal screen display；
7 feet of the chip U2 connect 6 foot of input pin, constitute a follower, and it acts as input impedance height, output impedances
It is low so that the electric current asked for from signal source is small and load-carrying ability is strong, connects two circuits with it, it is possible to reduce straight between circuit
Connecing influences caused by being connected, and plays the role of buffering isolation.
The function that each component of the chip U3 connections is realized is similar with the function that each component is realized in chip U2；
The circuit of the chip U2 compositions and the circuit that chip U3 is formed are symmetrical, survey standard sample all the way, a drive test is to be measured
Sample.
Control units of the chip U6 as entire measuring device, receives instruction by serial communication circuit.
It is connect between the pin 5 and pin 6 of the chip U6 there are one crystal oscillator Y1, it is to provide one to microcontroller to act on
Clock frequency；One end of pin 1,13,19,32,48,64 shunt-wound capacitance C10, C11, C12, C13 of the chip U6, the parallel connection
The effect of capacitance is filtering.
In the circuit structure of LED light, the kPOWER is to connect entire contactor, kPOWER when by lower switch
End ground connection, due to being connected to VBAT, so diode D5 conductings, due to being provided with resistance R19, so metal-oxide-semiconductor Q1 conductings, battery warp
It is 3.7V to cross metal-oxide-semiconductor Q1 pressure drops, and is converted into 3.3V output voltages by low-dropout regulator, is supplied to central controller work
Make, light emitting diode D3 is bright at this time；When pressing lower switch kPOWER again, 17 human hair combing wastes of chip U6 go out signal so that diode D4 is led
Logical, diode D5 is not turned on, and metal-oxide-semiconductor Q1 is not turned on, and to make light emitting diode D3 extinguish, triode Q2 is also switched off, and has closing
Function.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Present invention has been described in detail with reference to the aforementioned embodiments for pipe, it will be understood by those of ordinary skill in the art that：Its according to
So can with technical scheme described in the above embodiments is modified, either to which part or all technical features into
Row equivalent replacement；And these modifications or replacements, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (6)
1. the intelligent heavy metal ion specific detection instrument for effect of being shaken based on magnetic, it is characterised in that：Including test side（1）And control
End（2）, the test side（1）For pen cover type structure, control terminal（2）For penholder type structure, the test side（1）It is sleeved on control terminal
（2）One end；
The test side（1）Be internally provided with the first vibration module（3）, the test side（1）Shell by magnetoelasticity metal
Material makes, the test side（1）Case surface be additionally provided with one layer of test paper；
The control terminal（2）Be internally provided with the second vibration module（4）, central controller（5）, data memory module（6）With
Wireless communication module（7）, the control terminal（2）Case surface be provided with LED display（8）, LED light（9）；
The central controller（5）Signal input part respectively with the first vibration module（3）With the second vibration module（4）Output
End is connected, the central controller（5）Signal output end respectively with LED display（8）, LED light（9）It is connected, it is described
Central controller（5）Also by conducting wire respectively with data memory module（6）, wireless communication module（7）It is connected；
The wireless communication module（7）Pass through wireless network and monitoring computer（10）It is connected；
First vibration module（3）With central controller（5）Between be additionally provided with amplifier and follow module（11）It is converted with direct current
Module（12）, first vibration module（3）It is sequentially connected in series amplifier and follows module（11）, DC conversion modules（12）Afterwards with center
Controller（5）It is connected.
2. the intelligent heavy metal ion specific detection instrument of effect according to claim 1 of being shaken based on magnetic, it is characterised in that：
First vibration module（3）Circuit structure be：
First vibration module（3）The chip used is frequency synthesis chip U1, the central controller（5）The chip used
For central control chip U6；
2 feet of the frequency synthesis chip U1 are grounded；
It is connected with 4 feet of frequency synthesis chip U1 behind 3 feet of the frequency synthesis chip U1 and one end of connecting resistance R1, the electricity
Hinder another termination 5V input powers of R1；
5 feet of the frequency synthesis chip U1 are grounded；
6 feet of the frequency synthesis chip U1 connect 5V input powers；
7 feet of the frequency synthesis chip U1 are connected with 55 feet of central control chip U6；
8 feet of the frequency synthesis chip U1 are connected with 56 feet of central control chip U6；
It is connected with crystal oscillator X1 after the 9 foot series resistor R4 of the frequency synthesis chip U1；
10 feet of the frequency synthesis chip U1 are grounded；
11 feet of the frequency synthesis chip U1 connect 5V input powers；
It is grounded after the 12 foot series resistor R6 of the frequency synthesis chip U1；
It is grounded after the 17 foot serial capacitance C1 of the frequency synthesis chip U1；
18 feet of the frequency synthesis chip U1 connect 5V input powers；
19 feet of the frequency synthesis chip U1 are grounded；
It is connected with one end of capacitance C20 behind 20 feet of the frequency synthesis chip U1 and one end of connecting resistance R5, the frequency is closed
It is connected with one end of capacitance C17 at after 21 feet of chip U1 and one end of connecting resistance R3, the other end of the resistance R3 simultaneously connects electricity
It is grounded after hindering the other end of R5；
22 feet of the frequency synthesis chip U1 are connected with 58 feet of central control chip U6；
23 feet of the frequency synthesis chip U1 connect 5V input powers；
24 feet of the frequency synthesis chip U1 are grounded；
25 feet of the frequency synthesis chip U1 are connected with 57 feet of central control chip U6.
3. the intelligent heavy metal ion specific detection instrument of effect according to claim 2 of being shaken based on magnetic, it is characterised in that：
The amplifier follows module（11）Circuit structure be：
The amplifier follows module（11）The chip used is amplifier chip U2 and U3；
The other end of the capacitance C17 is connected with one end of resistance R25, the other end of the resistance R25 and the one of connecting resistance R23
Be connected with 2 feet of amplifier chip U2 behind end, behind one end of 3 feet of the amplifier chip U2 and connecting resistance R27 with resistance R28 one
End is connected, another termination 3.3V input powers of the resistance R27, the other end ground connection of the resistance R28, the resistance R23
The other end be connected with 1 foot of amplifier chip U2,8 feet of the amplifier chip U2 connect 3.3V input powers；
5 foot phases after 1 foot of the amplifier chip U2 and one end of connecting resistance R24, one end of resistance R26 with amplifier chip U2
Even, another termination 3.3V input powers of the resistance R24, the other end ground connection of the resistance R26；
6 feet of the amplifier chip U2 are simultaneously connected after being connected to the anode of electrode capacitance C18 with 7 feet of amplifier chip U2；
The other end of the capacitance C20 is connected with one end of resistance R31, the other end of the resistance R31 and the one of connecting resistance R29
Be connected with 2 feet of amplifier chip U3 behind end, behind one end of 3 feet of the amplifier chip U3 and connecting resistance R33 with resistance R34 one
End is connected, another termination 3.3V input powers of the resistance R33, the other end ground connection of the resistance R34, the resistance R29
The other end be connected with 1 foot of amplifier chip U3,8 feet of the amplifier chip U3 connect 3.3V input powers；
5 foot phases after 1 foot of the amplifier chip U3 and one end of connecting resistance R30, one end of resistance R32 with amplifier chip U3
Even, another termination 3.3V input powers of the resistance R30, the other end ground connection of the resistance R32；
6 feet of the amplifier chip U3 are simultaneously connected after being connected to the anode of electrode capacitance C21 with 7 feet of amplifier chip U3.
4. the intelligent heavy metal ion specific detection instrument of effect according to claim 3 of being shaken based on magnetic, it is characterised in that：
The DC conversion modules（12）Circuit structure be：
The DC conversion modules（12）The chip used is that virtual value turns direct current chip U4 and U5；
1 foot that the virtual value turns direct current chip U4 is connected with there is the cathode of electrode capacitance C18；
3 feet that the virtual value turns direct current chip U4 connect -5V input powers；
4 feet that the virtual value turns direct current chip U4 are connected with there is the cathode of electrode capacitance C16；
The virtual value turns 6 feet of direct current chip U4 and is connected with 14 feet of central control chip U6；
7 feet that the virtual value turns direct current chip U4 turn 8 feet of direct current chip U4 with virtual value and are connected；
The virtual value turns 9 feet of direct current chip U4 and is connected to after valid value turns 10 feet of direct current chip U4 to be grounded；
The virtual value turns 14 feet of direct current chip U4 and is connected to the anode of electrode capacitance C16 to be followed by 5V input powers；
1 foot that the virtual value turns direct current chip U5 is connected with there is the cathode of electrode capacitance C21；
3 feet that the virtual value turns direct current chip U5 connect -5V input powers；
4 feet that the virtual value turns direct current chip U5 are connected with there is the cathode of electrode capacitance C19；
The virtual value turns 6 feet of direct current chip U5 and is connected with 15 feet of central control chip U6；
7 feet that the virtual value turns direct current chip U5 turn 8 feet of direct current chip U5 with virtual value and are connected；
The virtual value turns 9 feet of direct current chip U5 and is connected to after valid value turns 10 feet of direct current chip U5 to be grounded；
The virtual value turns 14 feet of direct current chip U5 and is connected to the anode of electrode capacitance C19 to be followed by 5V input powers.
5. the intelligent heavy metal ion specific detection instrument of effect according to claim 4 of being shaken based on magnetic, it is characterised in that：
The central controller（5）Circuit structure be：
16 feet of the central control chip U6 are connected with one end of resistance R21, the other end and connecting resistance of the resistance R21
It is connected with the base stage of triode Q2 behind one end of R22, the other end of the emitter of the triode Q2 and connecting resistance R22 are followed by
Ground, the collector of the triode Q2 are simultaneously connected after connecing the anode of diode D5 with one end of resistance R20, the resistance R20's
It is connected with the grid of metal-oxide-semiconductor Q1 behind one end of the other end and connecting resistance R19, the other end of the resistance R19 simultaneously connects metal-oxide-semiconductor Q1's
It is connected with 1 foot of central control chip U6 after source electrode, the drain electrode of the metal-oxide-semiconductor Q1 is sequentially connected in series resistance R18 and light emitting diode
It is grounded after D3；
The cathode of the diode D5 is simultaneously connected after connecing the cathode of diode D4 with circuit general switch kPower, the diode D4
Anode be connected with 17 feet of central control chip U6；
5 feet of the central control chip U6 are simultaneously connected after connecing one end of crystal oscillator Y1 with one end of capacitance C7, the center control
6 feet of chip U6 are simultaneously connected after connecing the other end of crystal oscillator Y1 with one end of capacitance C8, the other end shunt-wound capacitance of the capacitance C7
It is grounded after the other end of C8；
It is grounded after the 60 foot series resistor R12 of the central control chip U6；
It is connected with one end of capacitance C9 behind 7 feet of the central control chip U6 and one end of connecting resistance R13, the resistance R13
Another termination 3.3V input powers, the capacitance C9 the other end ground connection；
1 foot of the central control chip U6 successively and connect 32 feet of central control chip U6,48 feet, 64 feet, 19 feet, 13 feet,
One end of capacitance C13, one end of capacitance C12, one end of capacitance C11, capacitance C10 one end after be connected with 3.3V input powers,
The other end of described capacitance C13, C12, C11, C10 are grounded；
31 feet, 47 feet, 63 feet, 18 feet, 12 feet of the central control chip U6 are grounded.
6. the intelligent heavy metal ion specific detection instrument of effect according to claim 5 of being shaken based on magnetic, it is characterised in that：
The model AD8606 of the model AD9850, the amplifier chip U2 and U3 of the frequency synthesis chip U1, the virtual value
Turn the model AD536, the model STM32F103R6T6 of the central control chip U6 of direct current chip U4 and U5.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810254596.6A CN108508083A (en) | 2018-03-26 | 2018-03-26 | The intelligent heavy metal ion specific detection instrument for effect of being shaken based on magnetic |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810254596.6A CN108508083A (en) | 2018-03-26 | 2018-03-26 | The intelligent heavy metal ion specific detection instrument for effect of being shaken based on magnetic |
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| CN108508083A true CN108508083A (en) | 2018-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810254596.6A Pending CN108508083A (en) | 2018-03-26 | 2018-03-26 | The intelligent heavy metal ion specific detection instrument for effect of being shaken based on magnetic |
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Cited By (1)
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| CN110244033A (en) * | 2019-06-06 | 2019-09-17 | 太原理工大学 | A kind of portable urine detector and its detection method |
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