CN108507975A - A kind of acetylene analyzer based on TDLAS technologies - Google Patents
A kind of acetylene analyzer based on TDLAS technologies Download PDFInfo
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- CN108507975A CN108507975A CN201810344605.0A CN201810344605A CN108507975A CN 108507975 A CN108507975 A CN 108507975A CN 201810344605 A CN201810344605 A CN 201810344605A CN 108507975 A CN108507975 A CN 108507975A
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- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 title claims abstract description 21
- 238000000041 tunable diode laser absorption spectroscopy Methods 0.000 title claims abstract description 12
- 238000005516 engineering process Methods 0.000 title claims abstract description 11
- 238000001514 detection method Methods 0.000 claims abstract description 32
- 238000012360 testing method Methods 0.000 claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims description 25
- 238000012935 Averaging Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000003321 amplification Effects 0.000 claims description 12
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 9
- 238000001228 spectrum Methods 0.000 claims description 8
- 239000000696 magnetic material Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 77
- 238000000862 absorption spectrum Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000013500 data storage Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001872 inorganic gas Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a kind of acetylene analyzers based on TDLAS technologies, including micro-chip processor, signal generating circuit, laser driven module, laser diode, laser beam splitter, test gas chamber, Photoelectric Detection head, A/D module, lock-in amplifier.Micro-chip processor is electrically connected with D/A module respectively, and D/A module, laser driven module, laser diode and laser beam splitter are sequentially connected respectively.Laser beam splitter is divided to two beams to export, a branch of air cavity detection gas concentration by testing gas chamber, and another Shu Ze, which is used as, refers to light beam.Two-beam passes through Photoelectric Detection respectively, then passes through A/D module, lock-in amplifier successively, finally obtains surveyed gas concentration by micro-chip processor.The configuration of the present invention is simple, the life of product time is long, high to the accuracy of detection of gas, can remote control movement, improve efficiency of the network operation personnel in detection work, the effective guarantee life security of field personnel.
Description
Technical field
The present invention relates to TDLAS technical fields, more particularly, to a kind of acetylene analyzer based on TDLAS technologies.
Background technology
Absorption spectrum theory is a kind of modern Detection Techniques risen, and can apply to the motion state analysis of gas molecule
And gaseous species differentiate and content determines.TDLAS(Tunable diode laser absorption spectroscopy)Gas detection theory is mainly
Based on gas absorption spectra theory, the concentration of tested gas is inferred by the absorption spectrum of gas, while driving in laser
Part uses the wavelength-modulation technique of semiconductor laser with tunable, is incorporated in the locking phase amplification second harmonic that receiving terminal uses and carries
Technology is taken, realizes high-precision detection gas concentration.
In operation of power networks and in safeguarding, staff unavoidably encounters all kinds of different gases, these gases are nothing a bit
It is harmful such as CO2, H2, SF6Deng, and some are harmful such as CO, SO2, the hydrocarbon gas such as acetylene, these gases be a bit equipment just
Often generated when operation, some gases are then that unusual condition has occurred just to will produce.Therefore all kinds of gases can be supervised
It surveys, and staff will be helpful to by development different gas analyzing apparatus, equipment operation condition is analyzed, may be used also
Personal safety is protected by the analysis to local environment gas componant.Gas is analyzed using TDLAS technologies, when specific
The laser of wavelength passes through surveyed gas gas chamber(Air chamber)When, gas will absorb laser, and by path it is longer, gas
Body is different to the degree of laser absorption, therefore can directly determine that gas absorbs the road of laser for specific gas setting gas chamber
Diameter, to provide necessary condition for the detection of subsequent gases concentration.Therefore, an easy inorganic gas abbreviated analysis instrument is
Highly beneficial.
Invention content
The present invention overcomes the defect of above-mentioned existing power grid detection gas, provide a kind of new based on TDLAS technologies
Acetylene analyzer, the configuration of the present invention is simple, the life of product time is long, and accuracy of detection is high, can remote control movement, effective guarantee
The life security of field personnel.
In order to solve the above technical problems, technical scheme is as follows:
A kind of acetylene analyzer based on TDLAS technologies, including micro-chip processor, signal generating circuit, laser driven module, swash
Optical generator, laser beam splitter, test gas chamber, the first Photoelectric Detection head, the second Photoelectric Detection head, the first A/D module, the 2nd AD
Module, 2 lock-in amplifiers, wherein
2 lock-in amplifiers are defined as the first lock-in amplifier and the second lock-in amplifier;
First output end of the micro-chip processor is electrically connected with the input terminal of signal generating circuit;
First output end of the signal generating circuit is electrically connected with the input terminal of laser driven module;
The second output terminal of the signal generating circuit is electrically connected with the input terminal of laser driven module;
The output end of the laser driven module is electrically connected with the input terminal of laser generator;
The laser generator is for generating gaseous spectrum;
The output end of the laser generator is electrically connected with the light input end of laser beam splitter;
First light output end of the laser beam splitter is arranged on the light input end of test gas chamber;
The light input end light connects of second light output end of the laser beam splitter and the second Photoelectric Detection head;
The light input end of the first Photoelectric Detection head is arranged on the light output end of test gas chamber;
The output end of the first Photoelectric Detection head is electrically connected with the input terminal of the first A/D module;
The output end of the second Photoelectric Detection head is electrically connected with the input terminal of the second A/D module;
The output end of first A/D module is electrically connected with the first input end of the first lock-in amplifier;
The output end of second A/D module is electrically connected with the first input end of the second lock-in amplifier;
The output end of first lock-in amplifier is electrically connected with the first input end of micro-chip processor;
The output end of second lock-in amplifier is electrically connected with the second input terminal of micro-chip processor;
The second output terminal of the signal generating circuit is electrically connected with the reference signal end of the first lock-in amplifier;
The second output terminal of the signal generating circuit is electrically connected with the reference signal end of the second lock-in amplifier.
The course of work of the present invention is as follows:
Micro-chip processor controls signal generating circuit and generates signal, and the first output end of signal generating circuit exports sawtooth wave, the
Two output ends export sine wave, and the frequency of sine wave is significantly larger than sawtooth wave.Sawtooth wave generates gas spy for laser diode
Sign spectrum, and sine wave is then used to the gaseous spectrum that laser diode generates being modulated into second harmonic as carrier wave.Second harmonic
Gaseous spectrum two beams are divided by laser beam splitter, a branch of air cavity detection gas concentration by testing gas chamber, another Shu Ze
As with reference to light beam.Two-beam is changed into two path signal by photodetector respectively, and two path signal is formed by comparing
Differential Input reduces interference, and two paths of signals enters lock-in amplifier by being taken out after being demodulated with sine wave via A/D module respectively again
The second harmonic situation of second harmonic information therein, lock-in amplifier output is sent to micro-chip processor, is converted after operation
By survey gas concentration, complete the detection to the concentration of surveyed gas.
In a kind of preferred scheme, the laser generator is distribution type laser diode.
In this preferred embodiment, the centre wavelength of distribution type laser diode is 1529.16nm, breadth of spectrum line 0.2nm, maximum
Output power is 10mw.In addition, being internally integrated thermoelectric cooling module thermistor, temperature can preferably be controlled, separately
This outer light source has compared with strong anti-interference ability, can increase the detection performance of gas
In a kind of preferred scheme, the first Photoelectric Detection head, the second Photoelectric Detection head are all avalanche photodides.
In this preferred embodiment, since the concentration of acetylene is generally all relatively low, after spectrum analysis, signal is very micro-
It is weak, avalanche photodide is selected, not only it is a kind of light-sensitive element, photoelectric current can also be made exponentially to increase sharply, gain level
It can reach 106。
In a kind of preferred scheme, the signal generating circuit includes that chip, filtering sub-circuit, signal occur for signal
It is superimposed sub-circuit, wherein
Input terminal of the input terminal of chip as signal generating circuit occurs for the signal, and the first output of chip occurs for signal
End is electrically connected with the first input end of Signal averaging sub-circuit;
The second output terminal that chip occurs for the signal is electrically connected with the input terminal of filtering sub-circuit;
The output end of the filtering sub-circuit is electrically connected with the second input terminal of Signal averaging sub-circuit;
Output end of the output end of the Signal averaging sub-circuit as signal generating circuit.
In a kind of preferred scheme, the Signal averaging sub-circuit includes first resistor, second resistance, third electricity
Resistance, the 4th resistance, the 5th resistance, the 6th resistance, the first capacitance, the second capacitance, the first operational amplifier, second operational amplifier
With the enhanced metal-oxide-semiconductor of N-channel, wherein
First input end of the one end of the first resistor as Signal averaging sub-circuit, one end of first resistor and the first electricity
One end of appearance is electrically connected;
The other end of first capacitance is grounded;
Second input terminal of the one end of the second resistance as Signal averaging sub-circuit, one end of second resistance and the second electricity
One end of appearance is electrically connected;
The other end of second capacitance is grounded;
The other end of the first resistor is electrically connected with the other end of second resistance;
The other end of the second resistance is electrically connected with the in-phase input end of the first operational amplifier;
The other end of first capacitance is electrically connected with one end of 3rd resistor;
The other end of the 3rd resistor is electrically connected with the in-phase input end of the first operational amplifier;
The other end of second capacitance is electrically connected with one end of the 4th resistance;
The other end of 4th resistance is electrically connected with the inverting input of the first operational amplifier;
The other end of 4th resistance is electrically connected with one end of the 5th resistance;
The other end of 5th resistance is electrically connected with the output end of the first operational amplifier;
The output end of first operational amplifier is electrically connected with the in-phase input end of second operational amplifier;
The inverting input of the second operational amplifier is electrically connected with the source electrode of the enhanced metal-oxide-semiconductor of N-channel;
The output end of the second operational amplifier is electrically connected with the grid of the enhanced metal-oxide-semiconductor of N-channel;
The source electrode of the enhanced metal-oxide-semiconductor of the N-channel is electrically connected with one end of the 6th resistance;
The other end of 6th resistance is grounded;
The drain electrode of the enhanced metal-oxide-semiconductor of the N-channel connects power supply, and the drain electrode of the enhanced metal-oxide-semiconductor of the N-channel is folded as signal
Add the output end of sub-circuit.
In a kind of preferred scheme, the lock-in amplifier includes that electric current turns voltage module, signal amplification circuit,
One multiplier, delay cell, 2 low-pass filter circuits, third multiplier, the 4th multiplier, adder, is opened the second multiplier
Square computing circuit, wherein
2 low-pass filter circuits are defined as the first low-pass filter circuit, the second low-pass filter circuit;
The electric current turns input terminal of the input terminal as lock-in amplifier of voltage module, and electric current turns the output end of voltage module
It is electrically connected with the input terminal of signal amplification circuit;
The output end of the signal amplification circuit is electrically connected with the first input end of the first multiplier;
Second input terminal of first multiplier is electrically connected with the second output terminal of micro-chip processor;
The output end of the signal amplification circuit is electrically connected with the first input end of the second multiplier;
The delay cell is with by input signal delay period time, the input terminal of delay cell and the second of micro-chip processor
Output end is electrically connected;
Second input terminal of the output end of the delay cell and the second multiplier;
The output end of first multiplier is electrically connected with the input terminal of the first low-pass filter circuit;
The output end of second multiplier is electrically connected with the input terminal of the second low-pass filter circuit;
The output end of first low-pass filter circuit is electrically connected with the first input end of third multiplier;
The output end of first low-pass filter circuit is electrically connected with the second input terminal of third multiplier;
The output end of second low-pass filter circuit is electrically connected with the first input end of the 4th multiplier;
The output end of second low-pass filter circuit is electrically connected with the second input terminal of the 4th multiplier;
The output end of third multiplier is electrically connected with the first input end of adder;
The output end of 4th multiplier is electrically connected with the second input terminal of adder;
The output end of the adder is electrically connected with the input terminal of extracting operation circuit, the output end conduct of extracting operation circuit
The output end of lock-in amplifier.
In a kind of preferred scheme, the low-pass filter circuit includes the first tunable capacitor, the second tunable capacitor, the
Three tunable capacitors, inductance, wherein
Input terminal of the one end of the inductance as low-pass filter circuit, the other end of inductance is as the defeated of low-pass filter circuit
Outlet;
One end of the inductance is electrically connected with one end of the first tunable capacitor;
The other end of first tunable capacitor is grounded;
One end of the inductance is electrically connected with one end of the second tunable capacitor;
The other end of the inductance is electrically connected with the other end of the second tunable capacitor;
The other end of the inductance is electrically connected with one end of third tunable capacitor;
The other end of the third tunable capacitor is grounded.
In a kind of preferred scheme, the inorganic gas analyzer further includes temperature sensor, the distribution
The gaseous spectrum of laser diode follows variation with the variation of the temperature detection signal of temperature sensor.
In a kind of preferred scheme, the test gas chamber include gas chamber framework, several pieces of speculums, the first lens and
Second lens, wherein
The both sides of the gas chamber framework offer through-hole respectively, are respectively defined as first through hole and the second through-hole,
The incident ray passes through second by first through hole from external environment into the air chamber of air inlet chamber framework, reflection light
Through-hole enters external environment from the air chamber of gas chamber framework;
First lens are embedded into first through hole, and the second lens are embedded into the second through-hole;
Speculum is provided on the inside of the gas chamber framework, the speculum will be carried out by the incident ray of first through hole
Reflection is projected finally by the second through-hole.
In this preferred embodiment, incident laser, from external environment into the air chamber of air inlet chamber framework, is passed through by first through hole
The multiple reflections of speculum, due to being filled with tested gas in air chamber, tested gas can absorb incident laser, then
Enter external environment from the air chamber of gas chamber framework by the second through-hole, is then detected by Photoelectrical detector.
In a kind of preferred scheme, the gas chamber framework includes inner cavity and exocoel, between the inner cavity and exocoel
It is provided with the supporting pad of rubber material, speculum is provided on the inside of inner cavity.
In a kind of preferred scheme, the inside of the inner cavity is provided with magnetic material, and the magnetic material is uniform
It is placed on the inside of inner cavity.
In a kind of preferred scheme, the cross section of the speculum is isosceles triangle, and the apex angle A of speculum is fixed
It is arranged in the inside of inner cavity, speculum can carry out Arbitrary Rotation around apex angle A;The base angle B and base angle C of the speculum
It is both provided with magnet, the speculum fixes rotation angle by magnet.
In a kind of preferred scheme, the quantity of the speculum is 6 pieces, is defined as the first speculum, the second reflection
Mirror, third speculum, the 4th speculum, the 5th speculum, the 6th speculum;First speculum and the second speculum edge
Horizontal line is symmetrical arranged, and the 4th speculum and the 5th speculum are symmetrical arranged along horizontal line, the third speculum
It is symmetrical arranged along vertical line with the 6th speculum, the third speculum and the 6th speculum are symmetrical arranged along vertical line, institute
The first speculum and the 4th speculum stated are symmetrical arranged along vertical line, and second speculum is with the 5th speculum along vertical
Line is symmetrical arranged, and the reflection path of the light is:The speculum of the speculum of entrance port → third speculum → second → first
The speculum of → the four speculum → the 5th → six speculums → exit wound of bullet.
In a kind of preferred scheme, the adjustable mirror-reflection gas chamber further includes support leg, and the support leg is set
The bottom end in the inside of gas chamber framework, the bottom end connection of support leg and speculum are set, support leg is used to provide protection to speculum
Effect.
In a kind of preferred scheme, the adjustable mirror-reflection gas chamber further includes cone of support, adjustable spring and adjusting
Device, wherein
The telescopic level of adjustable spring is adjusted in the adjuster, to change the folder between cone of support and gas chamber framework
Angle;
The bottom end in gas chamber framework side is arranged in the cone of support.
In a kind of preferred scheme, the speculum is the gold-plated speculum of Thorlabs companies.
In this preferred embodiment, gold-plated speculum is to CO, CO2Reflectivity in equal gas lasers wave-length coverage is up to 95%
More than, allow laser to be reflected in gas chamber 8 ~ 12 times through research, gas can fully absorb laser, and also ensure laser
It is detected by Photoelectrical detector after output.
In a kind of preferred scheme, the lens are the N-BK7 diaphragms of Thorlabs companies.
In this preferred embodiment, the N-BK7 diaphragms of Thorlabs companies are to CO, CO2Transmission within the scope of equal gas lasers
Rate is up to 90% or more.
In a kind of preferred scheme, the adjustable mirror-reflection gas chamber further includes 4 idler wheels, idler wheel difference
It is arranged at four angles in the outside of gas chamber framework, the idler wheel is for pushing adjustable mirror-reflection gas chamber.
In this preferred embodiment, idler wheel is conducive to move adjustable mirror-reflection gas chamber, does not need artificial mode and carries
Get up and is being moved.
In a kind of preferred scheme, the adjustable mirror-reflection gas chamber further includes controlled motor and remote control mould
Block, the controlled motor are sequentially connected with idler wheel, and the output end of remote control module is electrically connected with the control terminal of controlled motor.
In this preferred embodiment, controlled motor is controlled by remote control module and drives idler wheel rotation, avoids artificially pushing pipe
Wheel further saves strength, improves working efficiency.
In a kind of preferred scheme, the acetylene analyzer further includes display module, the display module it is defeated
Enter end to be electrically connected with the second output terminal of micro-chip processor.
In a kind of preferred scheme, the acetylene analyzer further includes data storage, the data storage
Input terminal in micro-chip processor third output end be electrically connected.
Compared with prior art, the advantageous effect of technical solution of the present invention is:
The configuration of the present invention is simple, the life of product time is long, high to the accuracy of detection of gas, can remote control movement, improve electricity
Net efficiency of the staff in detection work, the effective guarantee life security of field personnel.
Description of the drawings
Fig. 1 is example structure figure.
Fig. 2 is the sectional view that gas chamber is tested in embodiment.
Fig. 3 is the lock-in amplifier module map in embodiment.
Fig. 4 is the low-pass filter circuit figure in embodiment.
Fig. 5 is the signal generating circuit module map in embodiment.
Fig. 6 is the superimposed signal circuit figure in embodiment.
Specific implementation mode
The attached figures are only used for illustrative purposes and cannot be understood as limitating the patent;
In order to more preferably illustrate that the present embodiment, the certain components of attached drawing have omission, zoom in or out, the ruler of actual product is not represented
It is very little;
To those skilled in the art, the omitting of some known structures and their instructions in the attached drawings are understandable.
The following further describes the technical solution of the present invention with reference to the accompanying drawings and examples.
As shown in Figure 1, electricity occurs for a kind of acetylene analyzer based on TDLAS technologies, including STM32 family chips, signal
Road, the first D/A module, the second D/A module, laser driven module, distribution type laser diode, laser beam splitter, temperature sensor,
Test gas chamber, the first avalanche photodide, the second avalanche photodide, the first A/D module, the second A/D module, the first locking phase
Amplifier, the second lock-in amplifier, LCD display and TF card,
First output end of STM32 family chips is electrically connected with the input terminal of signal generating circuit;
First output end of signal generating circuit exports sawtooth wave, the first output end and laser driven module of signal generating circuit
Input terminal electrical connection;
The second output terminal of signal generating circuit exports sine wave, the second output terminal and laser driven module of signal generating circuit
Input terminal electrical connection;
The output end of laser driven module is electrically connected with the input terminal of distribution type laser diode;
The gaseous spectrum of distribution type laser diode follows variation with the variation of the temperature detection signal of temperature sensor;
The output end of distribution type laser diode is electrically connected with the light input end of laser beam splitter;
First light output end of laser beam splitter is arranged on the light input end of test gas chamber;
Second light output end of laser beam splitter and the light input end light connects of the second avalanche photodide;
The light input end of first avalanche photodide is arranged on the light output end of test gas chamber;
The output end of first avalanche photodide is electrically connected with the input terminal of the first A/D module;
The output end of second avalanche photodide is electrically connected with the input terminal of the second A/D module;
The output end of first A/D module is electrically connected with the first input end of the first lock-in amplifier;
The output end of second A/D module is electrically connected with the first input end of the second lock-in amplifier;
The second output terminal of signal generating circuit is electrically connected with the reference signal end of the first lock-in amplifier;
The second output terminal of signal generating circuit is electrically connected with the reference signal end of the second lock-in amplifier;
The output end of first lock-in amplifier is electrically connected with the first input end of STM32 family chips;
The output end of second lock-in amplifier is electrically connected with the second input terminal of STM32 family chips;
The second output terminal of STM32 family chips is electrically connected with the input terminal of LCD display;
The third output end of STM32 family chips is electrically connected with the input terminal of TF card.
Wherein, as shown in Fig. 2, test gas chamber includes gas chamber framework, the gold-plated speculum of 6 pieces of Thorlabs companies, first
The N-BK7 diaphragms of Thorlabs companies, the N-BK7 diaphragms of the 2nd Thorlabs companies, supporting pad, support leg, cone of support,
Adjustable spring, adjuster, 4 idler wheels, controlled motor and remote control module, wherein
Gas chamber framework is cuboid, and gas chamber framework is divided into inner cavity and exocoel, and shell is wire chamber a length of 500mm, wide 400mm;It is interior
Chamber long 480mm, wide 380mm, deep 40mm;With supporting pad to prevent minute surface to be damaged between inner cavity and exocoel, the both sides of room framework
Through-hole is offered respectively, is respectively defined as first through hole and the second through-hole;Incident ray by first through hole from external environment into
The air chamber of air inlet chamber framework, reflection light enter external environment by the second through-hole from the air chamber of gas chamber framework;First
The N-BK7 diaphragms of Thorlabs companies are embedded into first through hole, and the N-BK7 diaphragms of the 2nd Thorlabs companies are embedded into
Two through-holes;
Several through-holes are offered on the outside of the exocoel of gas chamber framework, the aperture of through-hole is the hole of 1cm, has lid on air admission hole,
Port lid can be closed when carrying out gas test to completely cut off extraneous gas entrance, the inside of the inner cavity of gas chamber framework is along wide installation two
Root guide rail, guide rail card groove width 5mm, guide rail are fixedly mounted in the lumen with screw, and two guide rail is parallel and outer is separated by 300mm,
The long 350mm of every guide rail.Speculum 1,2,4,5 is directly installed on guide rail card slot, speculum thickness 10mm, the cross section of speculum
For isosceles triangle, angle A is 120 degree, and angle BC is 30 degree, and the sides BC are minute surface, and 4mm screws are housed on the angles A, can be used for fixing
There is magnet in the position of speculum in BC two corners, can be used for fixing the rotation angle of minute surface, and rotation position can pass through magnetic after determining
Ferropexy is on stainless steel substrates.Speculum 3,6, the angle fixed positions A are constant, horizontal distance 200mm.By adjust rotation angle come
Coordinate reflection light with speculum 2,5.
The horizontal distance of speculum 1 and 3 is 50mm, and 1 minute surface of speculum is always with horizontal line at 45 degree of angles.So work as reflection
When mirror 1 and 2 light reflections point distance are 100mm, the reflected light and incident light angle of speculum 2 are 45 degree.Rotary reflection is wanted at this time
Mirror 2 makes reflecting surface with vertical line at 67.5 degree of angles, while should select speculum 3, makes horizontal plane with vertical line at 67.5 degree of angles.Instead
It penetrates mirror 1 to be symmetrical arranged along horizontal line with speculum 2, speculum 4 is symmetrical arranged with speculum 5 along horizontal line, speculum 3 and reflection
Mirror 6 is symmetrical arranged along vertical line, and speculum 3 is symmetrical arranged with speculum 6 along vertical line, and speculum 1 is with speculum 4 along vertical line
It is symmetrical arranged, speculum 2 is symmetrical arranged with speculum 5 along vertical line.The reflection path of light is:Entrance port → speculum 3 →
Speculum 2 → speculum, 1 → speculum, 4 → speculum, 5 → speculum, 6 → exit wound of bullet.
The bottom end in the inside of gas chamber framework, the bottom of support leg and the gold-plated speculum of Thorlabs companies is arranged in support leg
End connection, support leg are used to provide protective effect to the gold-plated speculum of Thorlabs companies;
The telescopic level of adjustable spring is adjusted in adjuster, to change the angle between cone of support and gas chamber framework, makes
It carries out selection of times between 8 ~ 12 times;
The bottom end in gas chamber framework side is arranged in cone of support;
It is provided with black sticker, black sticker and gas chamber on the inside of the gold-plated speculum of no Thorlabs companies of gas chamber framework
Framework is fixedly connected;
Adjustable mirror-reflection gas chamber further includes 4 idler wheels, and idler wheel is separately positioned on four angles in the outside of gas chamber framework;
Controlled motor is sequentially connected with idler wheel, and the output end of remote control module is electrically connected with the control terminal of controlled motor.
Wherein, as shown in figure 5, signal generating circuit includes ICL8038, filtering sub-circuit, Signal averaging sub-circuit,
In,
Input terminal of the input terminal of ICL8038 as signal generating circuit, the first output end of chip occurs for signal and signal is folded
The first input end of sub-circuit is added to be electrically connected;
The second output terminal of ICL8038 is electrically connected with the input terminal of filtering sub-circuit;
The output end of filtering sub-circuit is electrically connected with the second input terminal of Signal averaging sub-circuit;
Output end of the output end of Signal averaging sub-circuit as signal generating circuit.
Wherein, as shown in fig. 6, Signal averaging sub-circuit include first resistor, second resistance, 3rd resistor, the 4th resistance,
5th resistance, the 6th resistance, the first capacitance, the second capacitance, the first operational amplifier, second operational amplifier and N-channel enhancing
Type metal-oxide-semiconductor, wherein
First input end of the one end of first resistor as Signal averaging sub-circuit, one end of first resistor and the one of the first capacitance
End electrical connection;
The other end of first capacitance is grounded;
Second input terminal of the one end of second resistance as Signal averaging sub-circuit, one end of second resistance and the one of the second capacitance
End electrical connection;
The other end of second capacitance is grounded;
The other end of first resistor is electrically connected with the other end of second resistance;
The other end of second resistance is electrically connected with the in-phase input end of the first operational amplifier;
The other end of first capacitance is electrically connected with one end of 3rd resistor;
The other end of 3rd resistor is electrically connected with the in-phase input end of the first operational amplifier;
The other end of second capacitance is electrically connected with one end of the 4th resistance;
The other end of 4th resistance is electrically connected with the inverting input of the first operational amplifier;
The other end of 4th resistance is electrically connected with one end of the 5th resistance;
The other end of 5th resistance is electrically connected with the output end of the first operational amplifier;
The output end of first operational amplifier is electrically connected with the in-phase input end of second operational amplifier;
The inverting input of second operational amplifier is electrically connected with the source electrode of the enhanced metal-oxide-semiconductor of N-channel;
The output end of second operational amplifier is electrically connected with the grid of the enhanced metal-oxide-semiconductor of N-channel;
The source electrode of the enhanced metal-oxide-semiconductor of N-channel is electrically connected with one end of the 6th resistance;
The other end of 6th resistance is grounded;
The drain electrode of the enhanced metal-oxide-semiconductor of N-channel connects power supply, and the drain electrode of the enhanced metal-oxide-semiconductor of the N-channel is as Signal averaging electricity
The output end on road.
Wherein, as shown in figure 3, lock-in amplifier includes electric current turn voltage module, signal amplification circuit, the first multiplier,
Second multiplier, delay cell, 2 low-pass filter circuits, third multiplier, the 4th multiplier, adder, extracting operation electricity
Road, wherein
Electric current turns input terminal of the input terminal as lock-in amplifier of voltage module, and electric current turns the output end and signal of voltage module
The input terminal of amplifying circuit is electrically connected;
The output end of signal amplification circuit is electrically connected with the first input end of the first multiplier;
Second input terminal of the first multiplier is electrically connected with the second output terminal of micro-chip processor;
The output end of signal amplification circuit is electrically connected with the first input end of the second multiplier;
Delay cell is with by input signal delay period time, the input terminal of delay cell and the second output terminal of micro-chip processor
Electrical connection;
Second input terminal of the output end of delay cell and the second multiplier;
The output end of first multiplier is electrically connected with the input terminal of the first low-pass filter circuit;
The output end of second multiplier is electrically connected with the input terminal of the second low-pass filter circuit;
The output end of first low-pass filter circuit is electrically connected with the first input end of third multiplier;
The output end of first low-pass filter circuit is electrically connected with the second input terminal of third multiplier;
The output end of second low-pass filter circuit is electrically connected with the first input end of the 4th multiplier;
The output end of second low-pass filter circuit is electrically connected with the second input terminal of the 4th multiplier;
The output end of third multiplier is electrically connected with the first input end of adder;
The output end of 4th multiplier is electrically connected with the second input terminal of adder;
The output end of adder is electrically connected with the input terminal of extracting operation circuit, and the output end of extracting operation circuit is put as locking phase
The output end of big device.
Wherein, as shown in figure 4, low-pass filter circuit includes the first tunable capacitor, the second tunable capacitor, third adjustable electric
Hold, inductance, wherein
Input terminal of the one end of inductance as low-pass filter circuit, the output end of the other end of inductance as low-pass filter circuit;
One end of inductance is electrically connected with one end of the first tunable capacitor;
The other end of first tunable capacitor is grounded;
One end of inductance is electrically connected with one end of the second tunable capacitor;
The other end of inductance is electrically connected with the other end of the second tunable capacitor;
The other end of inductance is electrically connected with one end of third tunable capacitor;
The other end of third tunable capacitor is grounded.
The same or similar label correspond to the same or similar components;
The terms describing the positional relationship in the drawings are only for illustration, should not be understood as the limitation to this patent;
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be to this hair
The restriction of bright embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Go out other various forms of variations or variation.There is no necessity and possibility to exhaust all the enbodiments.It is all in the present invention
Spirit and principle within made by all any modification, equivalent and improvement etc., should be included in the guarantor of the claims in the present invention
Within the scope of shield.
Claims (10)
1. a kind of acetylene analyzer based on TDLAS technologies, which is characterized in that including micro-chip processor, signal generating circuit, swash
Optical drive module, laser generator, laser beam splitter, test gas chamber, the first Photoelectric Detection head, the second Photoelectric Detection head, first
A/D module, the second A/D module, 2 lock-in amplifiers, wherein
2 lock-in amplifiers are defined as the first lock-in amplifier and the second lock-in amplifier;
First output end of the micro-chip processor is electrically connected with the input terminal of signal generating circuit;
First output end of the signal generating circuit is electrically connected with the input terminal of laser driven module;
The second output terminal of the signal generating circuit is electrically connected with the input terminal of laser driven module;
The output end of the laser driven module is electrically connected with the input terminal of laser generator;
The laser generator is for generating gaseous spectrum;
The output end of the laser generator is electrically connected with the light input end of laser beam splitter;
First light output end of the laser beam splitter is arranged on the light input end of test gas chamber;
The light input end light connects of second light output end of the laser beam splitter and the second Photoelectric Detection head;
The light input end of the first Photoelectric Detection head is arranged on the light output end of test gas chamber;
The output end of the first Photoelectric Detection head is electrically connected with the input terminal of the first A/D module;
The output end of the second Photoelectric Detection head is electrically connected with the input terminal of the second A/D module;
The output end of first A/D module is electrically connected with the first input end of the first lock-in amplifier;
The output end of second A/D module is electrically connected with the first input end of the second lock-in amplifier;
The output end of first lock-in amplifier is electrically connected with the first input end of micro-chip processor;
The output end of second lock-in amplifier is electrically connected with the second input terminal of micro-chip processor;
The second output terminal of the signal generating circuit is electrically connected with the reference signal end of the first lock-in amplifier;
The second output terminal of the signal generating circuit is electrically connected with the reference signal end of the second lock-in amplifier.
2. acetylene analyzer according to claim 1, is characterized in that, the laser generator is two pole of distribution type laser
Pipe.
3. acetylene analyzer according to claim 2, is characterized in that, the test gas chamber includes gas chamber framework, several
Block speculum, the first lens and the second lens, wherein
The both sides of the gas chamber framework offer through-hole respectively, are respectively defined as first through hole and the second through-hole,
The incident ray passes through second by first through hole from external environment into the air chamber of air inlet chamber framework, reflection light
Through-hole enters external environment from the air chamber of gas chamber framework;
First lens are embedded into first through hole, and the second lens are embedded into the second through-hole;
Speculum is provided on the inside of the gas chamber framework, the speculum will be carried out by the incident ray of first through hole
Reflection is projected finally by the second through-hole.
4. acetylene analyzer according to claim 3, is characterized in that, the inside of the inner cavity is provided with magnetic material,
The magnetic material is uniformly placed on the inside of inner cavity.
5. acetylene analyzer according to claim 4, is characterized in that, the cross section of the speculum is isoceles triangle
Shape, the apex angle A of speculum are fixed at the inside of inner cavity, and speculum can carry out Arbitrary Rotation around apex angle A;Described
The base angle B and base angle C of speculum are both provided with magnet, and the speculum fixes rotation angle by magnet.
6. acetylene analyzer according to claim 5, is characterized in that, the quantity of the speculum is 6 pieces, is defined as
One speculum, the second speculum, third speculum, the 4th speculum, the 5th speculum, the 6th speculum;Described first is anti-
It penetrates mirror and the second speculum to be symmetrical arranged along horizontal line, the 4th speculum is symmetrically set with the 5th speculum along horizontal line
It sets, the third speculum and the 6th speculum are symmetrical arranged along vertical line, the third speculum and the 6th speculum
It is symmetrical arranged along vertical line, first speculum and the 4th speculum are symmetrical arranged along vertical line, the described second reflection
Mirror and the 5th speculum are symmetrical arranged along vertical line, and the reflection path of the light is:Entrance port → third speculum → the
The speculum of the speculum of the speculum of two-mirror → first → the 4th → the 5th → six speculums → exit wound of bullet.
7. the acetylene analyzer according to any claim in claim 1 to 6, is characterized in that, the signal occurs
Circuit includes that chip, filtering sub-circuit, Signal averaging sub-circuit occur for signal, wherein
Input terminal of the input terminal of chip as signal generating circuit occurs for the signal, and the first output of chip occurs for signal
End is electrically connected with the first input end of Signal averaging sub-circuit;
The second output terminal that chip occurs for the signal is electrically connected with the input terminal of filtering sub-circuit;
The output end of the filtering sub-circuit is electrically connected with the second input terminal of Signal averaging sub-circuit;
Output end of the output end of the Signal averaging sub-circuit as signal generating circuit.
8. acetylene analyzer according to claim 7, is characterized in that, the Signal averaging sub-circuit includes the first electricity
Resistance, second resistance, 3rd resistor, the 4th resistance, the 5th resistance, the 6th resistance, the first capacitance, the second capacitance, the first operation are put
Big device, second operational amplifier and the enhanced metal-oxide-semiconductor of N-channel, wherein
First input end of the one end of the first resistor as Signal averaging sub-circuit, one end of first resistor and the first electricity
One end of appearance is electrically connected;
The other end of first capacitance is grounded;
Second input terminal of the one end of the second resistance as Signal averaging sub-circuit, one end of second resistance and the second electricity
One end of appearance is electrically connected;
The other end of second capacitance is grounded;
The other end of the first resistor is electrically connected with the other end of second resistance;
The other end of the second resistance is electrically connected with the in-phase input end of the first operational amplifier;
The other end of first capacitance is electrically connected with one end of 3rd resistor;
The other end of the 3rd resistor is electrically connected with the in-phase input end of the first operational amplifier;
The other end of second capacitance is electrically connected with one end of the 4th resistance;
The other end of 4th resistance is electrically connected with the inverting input of the first operational amplifier;
The other end of 4th resistance is electrically connected with one end of the 5th resistance;
The other end of 5th resistance is electrically connected with the output end of the first operational amplifier;
The output end of first operational amplifier is electrically connected with the in-phase input end of second operational amplifier;
The inverting input of the second operational amplifier is electrically connected with the source electrode of the enhanced metal-oxide-semiconductor of N-channel;
The output end of the second operational amplifier is electrically connected with the grid of the enhanced metal-oxide-semiconductor of N-channel;
The source electrode of the enhanced metal-oxide-semiconductor of the N-channel is electrically connected with one end of the 6th resistance;
The other end of 6th resistance is grounded;
The drain electrode of the enhanced metal-oxide-semiconductor of the N-channel connects power supply, and the drain electrode of the enhanced metal-oxide-semiconductor of the N-channel is folded as signal
Add the output end of sub-circuit.
9. according to the acetylene analyzer described in any claim in claim 1,2,3,4,5,6 or 8, which is characterized in that institute
The lock-in amplifier stated include electric current turn voltage module, signal amplification circuit, the first multiplier, the second multiplier, delay cell,
2 low-pass filter circuits, third multiplier, the 4th multiplier, adder, extracting operation circuit, wherein
2 low-pass filter circuits are defined as the first low-pass filter circuit, the second low-pass filter circuit;
The electric current turns input terminal of the input terminal as lock-in amplifier of voltage module, and electric current turns the output end of voltage module
It is electrically connected with the input terminal of signal amplification circuit;
The output end of the signal amplification circuit is electrically connected with the first input end of the first multiplier;
Second input terminal of first multiplier is electrically connected with the second output terminal of micro-chip processor;
The output end of the signal amplification circuit is electrically connected with the first input end of the second multiplier;
The delay cell is with by input signal delay period time, the input terminal of delay cell and the second of micro-chip processor
Output end is electrically connected;
Second input terminal of the output end of the delay cell and the second multiplier;
The output end of first multiplier is electrically connected with the input terminal of the first low-pass filter circuit;
The output end of second multiplier is electrically connected with the input terminal of the second low-pass filter circuit;
The output end of first low-pass filter circuit is electrically connected with the first input end of third multiplier;
The output end of first low-pass filter circuit is electrically connected with the second input terminal of third multiplier;
The output end of second low-pass filter circuit is electrically connected with the first input end of the 4th multiplier;
The output end of second low-pass filter circuit is electrically connected with the second input terminal of the 4th multiplier;
The output end of third multiplier is electrically connected with the first input end of adder;
The output end of 4th multiplier is electrically connected with the second input terminal of adder;
The output end of the adder is electrically connected with the input terminal of extracting operation circuit, the output end conduct of extracting operation circuit
The output end of lock-in amplifier.
10. acetylene analyzer according to claim 9, which is characterized in that the low-pass filter circuit can including first
Adjust capacitance, the second tunable capacitor, third tunable capacitor, inductance, wherein
Input terminal of the one end of the inductance as low-pass filter circuit, the other end of inductance is as the defeated of low-pass filter circuit
Outlet;
One end of the inductance is electrically connected with one end of the first tunable capacitor;
The other end of first tunable capacitor is grounded;
One end of the inductance is electrically connected with one end of the second tunable capacitor;
The other end of the inductance is electrically connected with the other end of the second tunable capacitor;
The other end of the inductance is electrically connected with one end of third tunable capacitor;
The other end of the third tunable capacitor is grounded.
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CN201810344605.0A CN108507975A (en) | 2018-04-17 | 2018-04-17 | A kind of acetylene analyzer based on TDLAS technologies |
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CN201810344605.0A CN108507975A (en) | 2018-04-17 | 2018-04-17 | A kind of acetylene analyzer based on TDLAS technologies |
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CN112857247A (en) * | 2021-02-19 | 2021-05-28 | 山东英信计算机技术有限公司 | Deformation monitoring method, device, equipment and medium for PCB |
CN113702332A (en) * | 2021-08-23 | 2021-11-26 | 贵州电网有限责任公司 | SF6 electrical equipment fault component CO2Concentration detection device and method |
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