CN108505002A - A kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing - Google Patents
A kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing Download PDFInfo
- Publication number
- CN108505002A CN108505002A CN201810385541.9A CN201810385541A CN108505002A CN 108505002 A CN108505002 A CN 108505002A CN 201810385541 A CN201810385541 A CN 201810385541A CN 108505002 A CN108505002 A CN 108505002A
- Authority
- CN
- China
- Prior art keywords
- sio
- target
- nanometer
- stainless steel
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/324—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal matrix material layer comprising a mixture of at least two metals or metal phases or a metal-matrix material with hard embedded particles, e.g. WC-Me
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of preparation methods of the ultra-thin composite absorption film of region surface plasma enhancing, are from top to bottom followed successively by Ag+SiO2Nanometer layer, SiO2Nanometer layer, Ag nanometer layers and Si nanometer layers, successively using the burnt twin target of copolymerization(Si flat targets), Ag targets, SiO2Target uses intermediate frequency power supply, DC power supply and radio-frequency power supply sputtering successively, and plating forms Si nanometer layers, Ag nanometer layers and SiO successively2Nanometer layer, followed by Ag targets and SiO2Target co-sputtering is in SiO2Nanometer layer surface forms Ag+SiO2Nanometer layer.The present invention prepares that a kind of consistency is high, purity is high by controllable plating conditions, the nano combined absorbing film of adhesion-tight, plated film rate is high, good process repeatability, in addition, the present invention avoids the influence of target poison ing using the burnt twin target of copolymerization, and is excited using polymorphic type power supply, saves energy.
Description
Technical field
The present invention relates to a kind of preparation methods of the ultra-thin composite absorption film of region surface plasma enhancing, belong to photo-thermal skill
Art field.
Background technology
It is traditional based on the selective solar absorbing film of cermet because its excellent absorbing properties is to flourishing
The solar energy thermal-power-generating industry of development has played vital, typical cermet absorbing film such as Mo-Al2O3, W-
Al2O3Etc. being currently being used in the thermal-collecting tube of groove type solar photo-thermal power station.But as the stainless steel tube pair of thermal-collecting tube inner tube
It is selective absorbing in sunlight, is radiated due to the reflection of light while heat absorption, certain heat loss is caused, although existing
Cermet absorbing film such as Mo-Al2O3, W-Al2O3Due to the absorption of sunlight, but the reflection of light can not be weakened, to
Heat loss, general cermet absorbing film such as Mo-Al cannot be effectively reduced2O3, W-Al2O3Sunshine absorptivity be 96%,
But reflectivity reaches 13%, affects the absorption efficiency of sunlight.
In addition traditional cermet coating process is complex, and coating cost is higher, and sun light absorping film is to film
Purity and thickness requirement it is high, traditional cermet coating film thickness is thick, the absorption not only bad for sunlight and system
It is standby of high cost.
Invention content
In order to overcome the shortcomings of that conventional cermets film, the present invention propose that a kind of region surface plasma enhancing is ultra-thin
The preparation method of composite absorption film is prepared a kind of by the way that capable and experienced relate in ultra-thin absorbent film to be total to local surfaces phasmon
It shakes and combines, local optical electric field can be caused to significantly increase using the special nanostructure in surface, generate unusual optical characteristics,
In 300-800nm wave-length coverages internal absorption factor close to 100%, preparation process is simple, plating conditions are easy to control and process repeatability
It is good.
In order to achieve the above objectives, the technical proposal of the invention is realized in this way:
A kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing, specific preparation process are as follows:
Step 1:Matrix tubing is polished first until plated film requirement is put into Vacuum Deposition through ultrasonic cleaning, drying after
On the indoor support plate of film, wherein the track side-to-side movement of support plate bottom along vacuum coating room;
Step 2:Vacuum film coating chamber is vacuumized, when reaching certain vacuum degree in vacuum film coating chamber, particle is opened and bangs
It hits, stainless steel base tubing is cleaned;
Step 3:Applying argon gas in vacuum coating room, and vacuum degree certain in vacuum coating room is kept, while to stainless steel base
Tubing carries out being heated to certain temperature;
Step 4:The vacuum degree and temperature in step 3 are kept in vacuum coating room, stainless steel base tubing is by support plate from left-hand
Right movement, while the double target power supplies of intermediate frequency are opened, other power supplys are closed, starts copolymerization burnt twin target and stainless steel base tubing is plated
Si, forms Si nanometer layers, and the Si nanometers of layer thickness is copolymerized sputtering power, the stainless steel base tubing of burnt twin target by controlling
Movement rate, plated film time and vacuum degree control;
Step 5:The vacuum degree and temperature in step 3, stainless steel base tubing is kept to move from right to left in vacuum coating room, together
Shi Kaiqi DC power supplies, close other power supplys, and the Si nanometer layer surfaces for starting Ag targets plating in step 4 plate Ag, and formation Ag receives
Rice layer, the Ag nanometer layer thickness is by controlling the sputtering power of Ag, stainless steel base tubing movement rate, plated film time and very
Reciprocal of duty cycle controls;
Step 6:The vacuum degree and temperature in step 3, stainless steel base tubing is kept to move from left to right in vacuum coating room, together
Shi Kaiqi radio-frequency power supplies close other power supplys, start SiO2Target in steps of 5 plating Ag nanometer layer surfaces plate SiO2, formed
SiO2Nanometer layer, the SiO2The thickness of nanometer layer is by controlling SiO2The sputtering power of target, stainless steel base tubing movement speed
Rate, plated film time and vacuum degree control;
Step 7:The vacuum degree and temperature in step 3, stainless steel base tubing is kept to move from right to left in vacuum coating room, together
Shi Kaiqi DC power supplies and radio-frequency power supply close other power supplys, and Ag targets and SiO is respectively started2The Si of target plating in steps of 5 receives
Rice layer surface while cosputtering Ag and SiO2, form Ag+SiO2Nanometer layer, the Ag+SiO2The thickness of nanometer layer is by controlling Ag
Target and SiO2Sputtering power, stainless steel base tubing movement rate, plated film time and the vacuum degree of target controls plated film work immediately
Skill terminates.
Preferably, the Ag+SiO2The grain size of Ag particles is 3-5.5nm, and the Ag+SiO in nanometer layer2Nanometer thickness
Degree is 10 ~ 40nm.
Preferably, the SiO2The thickness of nanometer layer is 10 ~ 30nm.
Preferably, the thickness of the Ag nanometer layers is 70 ~ 120nm.
Preferably, the thickness of the Si nanometer layers is 150 ~ 200nm.
Preferably, the Ag targets, SiO2Target and the burnt twin target of copolymerization are flat target, and the burnt twin target of the copolymerization is two
A Si flat targets, the wherein purity of Si are:99.9999%, the purity of Ag is 99.999% in the Ag targets, the SiO2In target
SiO2Purity is 99.98%.
Preferably, the Ag nano particles are in Ag+SiO2Filling rate in nanometer layer is 45 ~ 68%.
Preferably, reach 3 × 10 in vacuum coating room in the step 2-4When Pa, start particle bombardment.
Preferably, it is 5 × 10 to keep vacuum degree in the step 3 in vacuum coating room-3Pa, and temperature in vacuum coating room
It is heated to 450 DEG C.
Advantageous effect:The present invention provides a kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing,
By controllable plating conditions, prepare that a kind of consistency is high, purity is high, the nano combined absorbing film of adhesion-tight, plated film rate
Height, good process repeatability, in addition, the present invention avoids the influence of target poison ing using the burnt twin target of copolymerization, and using polymorphic type electricity
Source excitation saves energy.
Description of the drawings
Fig. 1 is the coating chamber working condition schematic diagram of the present invention;
Fig. 2 is the film layer structure figure being prepared using the present invention.
Specific implementation mode
In order to make those skilled in the art better understand the technical solutions in the application, below to the embodiment of the present application
In technical solution be clearly and completely described, it is clear that described embodiments are only a part of embodiments of the present application,
Instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making creative labor
The every other embodiment obtained under the premise of dynamic, shall fall within the protection scope of the present application.
As shown in Figure 1, a kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing, from top to bottom according to
Secondary is Ag+SiO2Nanometer layer, SiO2Nanometer layer, Ag nanometer layers and Si nanometer layers, wherein the Ag+SiO2In nanometer layer, Ag receives
Rice grain is randomly-embedded dielectric SiO2In nanometer film layer, in dielectric SiO2Honeycomb-like pore structure is formed in nanometer film layer, institute
It states Si nanometer layers to be plated in stainless steel base tube surfaces, specific preparation process is as follows:
Step 1:Matrix tubing is polished first until plated film requirement is put into Vacuum Deposition through ultrasonic cleaning, drying after
On the indoor support plate of film, wherein the track side-to-side movement of support plate bottom along vacuum coating room;
Step 2:Vacuum film coating chamber is vacuumized, when reaching certain vacuum degree in vacuum film coating chamber, particle is opened and bangs
It hits, stainless steel base tubing is cleaned;
Step 3:Applying argon gas in vacuum coating room, and vacuum degree certain in vacuum coating room is kept, while to stainless steel base
Tubing carries out being heated to certain temperature;
Step 4:The vacuum degree and temperature in step 3 are kept in vacuum coating room, stainless steel base tubing is by support plate from left-hand
Right movement, while the double target power supplies of intermediate frequency are opened, other power supplys are closed, starts copolymerization burnt twin target and stainless steel base tubing is plated
Si, forms Si nanometer layers, and the Si nanometers of layer thickness is copolymerized sputtering power, the stainless steel base tubing of burnt twin target by controlling
Movement rate, plated film time and vacuum degree control;
Step 5:The vacuum degree and temperature in step 3, stainless steel base tubing is kept to move from right to left in vacuum coating room, together
Shi Kaiqi DC power supplies, close other power supplys, and the Si nanometer layer surfaces for starting Ag targets plating in step 4 plate Ag, and formation Ag receives
Rice layer, the Ag nanometer layer thickness is by controlling the sputtering power of Ag, stainless steel base tubing movement rate, plated film time and very
Reciprocal of duty cycle controls;
Step 6:The vacuum degree and temperature in step 3, stainless steel base tubing is kept to move from left to right in vacuum coating room, together
Shi Kaiqi radio-frequency power supplies close other power supplys, start SiO2Target in steps of 5 plating Ag nanometer layer surfaces plate SiO2, formed
SiO2Nanometer layer, the SiO2The thickness of nanometer layer is by controlling SiO2The sputtering power of target, stainless steel base tubing movement speed
Rate, plated film time and vacuum degree control;
Step 7:The vacuum degree and temperature in step 3, stainless steel base tubing is kept to move from right to left in vacuum coating room, together
Shi Kaiqi DC power supplies and radio-frequency power supply close other power supplys, and Ag targets and SiO is respectively started2The Si of target plating in steps of 5 receives
Rice layer surface while cosputtering Ag and SiO2, form Ag+SiO2Nanometer layer, the Ag+SiO2The thickness of nanometer layer is by controlling Ag
Target and SiO2Sputtering power, stainless steel base tubing movement rate, plated film time and the vacuum degree of target controls plated film work immediately
Skill terminates.
Preferably, the Ag+SiO2The grain size of Ag particles is 3-5.5nm, and the Ag+SiO in nanometer layer2Nanometer thickness
Degree is 30nm.
Preferably, the SiO2The thickness of nanometer layer is 20nm.
Preferably, the thickness of the Ag nanometer layers is 100nm.
Preferably, the thickness of the Si nanometer layers is 160nm.
Preferably, the Ag targets, SiO2Target and the burnt twin target of copolymerization are flat target, and the burnt twin target of the copolymerization is two
A Si flat targets, the wherein purity of Si are:99.9999%, the purity of Ag is 99.999% in the Ag targets, the SiO2In target
SiO2Purity is 99.98%.
Preferably, the Ag nano particles are in Ag+SiO2Filling rate in nanometer layer is 58%.
Preferably, reach 3 × 10 in vacuum coating room in the step 2-4When Pa, start particle bombardment.
Preferably, it is 5 × 10 to keep vacuum degree in the step 3 in vacuum coating room-3Pa, and temperature in vacuum coating room
It is heated to 450 DEG C.
The present invention passes through transmission electron microscope(TEM), scanning electron microscope(SEM)And atomic force microscope(AFM)
Composite film prepared by above-mentioned steps(As shown in Figure 2)Characterization test is carried out, it is smooth surface to find its configuration of surface not, and
It is that dielectric SiO is randomly-embedded with the graininess Ag nanoparticles of a diameter of 3-5.5nm2Main body, this nano combined absorbing film
Infrared region reflectivity close to 100%, this shows that this nano composite membrane has lower thermal emissivity, is a kind of high suction
The ideal sun light-absorbing surface of yield, low-heat emissivity.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Two kinds of modifications of these embodiments will be apparent to those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (9)
1. a kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing, which is characterized in that its specific preparation
Steps are as follows:
Step 1:Matrix tubing is polished first until plated film requirement is put into Vacuum Deposition through ultrasonic cleaning, drying after
On the indoor support plate of film, wherein the track side-to-side movement of support plate bottom along vacuum coating room;
Step 2:Vacuum film coating chamber is vacuumized, when reaching certain vacuum degree in vacuum film coating chamber, particle is opened and bangs
It hits, stainless steel base tubing is cleaned;
Step 3:Applying argon gas in vacuum coating room, and vacuum degree certain in vacuum coating room is kept, while to stainless steel base
Tubing carries out being heated to certain temperature;
Step 4:The vacuum degree and temperature in step 3 are kept in vacuum coating room, stainless steel base tubing is by support plate from left-hand
Right movement, while the double target power supplies of intermediate frequency are opened, other power supplys are closed, starts copolymerization burnt twin target and stainless steel base tubing is plated
Si, forms Si nanometer layers, and the Si nanometers of layer thickness is copolymerized sputtering power, the stainless steel base tubing of burnt twin target by controlling
Movement rate, plated film time and vacuum degree control;
Step 5:The vacuum degree and temperature in step 3, stainless steel base tubing is kept to move from right to left in vacuum coating room, together
Shi Kaiqi DC power supplies, close other power supplys, and the Si nanometer layer surfaces for starting Ag targets plating in step 4 plate Ag, and formation Ag receives
Rice layer, the Ag nanometer layer thickness is by controlling the sputtering power of Ag, stainless steel base tubing movement rate, plated film time and very
Reciprocal of duty cycle controls;
Step 6:The vacuum degree and temperature in step 3, stainless steel base tubing is kept to move from left to right in vacuum coating room, together
Shi Kaiqi radio-frequency power supplies close other power supplys, start SiO2Target in steps of 5 plating Ag nanometer layer surfaces plate SiO2, formed
SiO2Nanometer layer, the SiO2The thickness of nanometer layer is by controlling SiO2The sputtering power of target, stainless steel base tubing movement speed
Rate, plated film time and vacuum degree control;
Step 7:The vacuum degree and temperature in step 3, stainless steel base tubing is kept to move from right to left in vacuum coating room, together
Shi Kaiqi DC power supplies and radio-frequency power supply close other power supplys, and Ag targets and SiO is respectively started2The Si of target plating in steps of 5 receives
Rice layer surface while cosputtering Ag and SiO2, form Ag+SiO2Nanometer layer, the Ag+SiO2The thickness of nanometer layer is by controlling Ag
Target and SiO2Sputtering power, stainless steel base tubing movement rate, plated film time and the vacuum degree of target controls plated film work immediately
Skill terminates.
2. a kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing according to claim 1,
It is characterized in that, the Ag+SiO2The grain size of Ag particles is 3-5.5nm, and the Ag+SiO in nanometer layer2Nanometer layer thickness be 10 ~
40nm。
3. a kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing according to claim 1 or 2,
It is characterized in that, the SiO2The thickness of nanometer layer is 10 ~ 3020nm.
4. a kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing according to claim 3,
It is characterized in that, the thickness of the Ag nanometer layers is 70 ~ 120nm.
5. a kind of region surface plasma enhancing ultrathin wideband composite absorption film according to claim 1,2 or 4, special
Sign is that the thickness of the Si nanometer layers is 150 ~ 200nm.
6. a kind of preparation side of the ultra-thin composite absorption film of region surface plasma enhancing according to claim 1,2 or 4
Method, which is characterized in that the Ag targets, SiO2Target and the burnt twin target of copolymerization are flat target, and the burnt twin target of the copolymerization is two
A Si flat targets, the wherein purity of Si are:99.9999%, the purity of Ag is 99.999% in the Ag targets, the SiO2In target
SiO2Purity is 99.98%.
7. a kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing according to claim 1,
It is characterized in that, the Ag nano particles are in Ag+SiO2Filling rate in nanometer layer is 45 ~ 68%.
8. a kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing according to claim 1,
It is characterized in that, reaches 3 × 10 in vacuum coating room in the step 2-4When Pa, start particle bombardment.
9. a kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing according to claim 1,
It is characterized in that, holding vacuum degree is 5 × 10 in vacuum coating room in the step 3-3Pa, and temperature is heated in vacuum coating room
450℃。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810385541.9A CN108505002B (en) | 2018-04-26 | 2018-04-26 | Preparation method of region surface plasma enhanced ultrathin composite absorption film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810385541.9A CN108505002B (en) | 2018-04-26 | 2018-04-26 | Preparation method of region surface plasma enhanced ultrathin composite absorption film |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108505002A true CN108505002A (en) | 2018-09-07 |
CN108505002B CN108505002B (en) | 2020-07-28 |
Family
ID=63399337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810385541.9A Active CN108505002B (en) | 2018-04-26 | 2018-04-26 | Preparation method of region surface plasma enhanced ultrathin composite absorption film |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108505002B (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5916684A (en) * | 1997-12-22 | 1999-06-29 | Applied Vacuum Technologies Co., Ltd. | Simple process for anti-reflection coating with multiple metal films |
CN101294749A (en) * | 2007-04-24 | 2008-10-29 | 梁美意 | Heat-collecting tube with solar energy selective absorption coating and manufacturing method thereof |
CN101876490A (en) * | 2009-12-25 | 2010-11-03 | 中国科学院广州能源研究所 | Solar energy medium-high temperature selective heat absorbing coating |
CN103105011A (en) * | 2013-01-31 | 2013-05-15 | 中国科学院上海技术物理研究所 | Solar selective absorbing film series suitable for medium-high temperature heat usage and preparation method thereof |
CN103557612A (en) * | 2013-10-31 | 2014-02-05 | 常州龙腾太阳能热电设备有限公司 | High-temperature hydrogen-permeation-resisting clad layer structure on surface of solar heat collection pipe inner pipe |
US20170153045A1 (en) * | 2015-11-27 | 2017-06-01 | Metal Industries Research & Development Centre | Solar absorption structure |
-
2018
- 2018-04-26 CN CN201810385541.9A patent/CN108505002B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5916684A (en) * | 1997-12-22 | 1999-06-29 | Applied Vacuum Technologies Co., Ltd. | Simple process for anti-reflection coating with multiple metal films |
CN101294749A (en) * | 2007-04-24 | 2008-10-29 | 梁美意 | Heat-collecting tube with solar energy selective absorption coating and manufacturing method thereof |
CN101876490A (en) * | 2009-12-25 | 2010-11-03 | 中国科学院广州能源研究所 | Solar energy medium-high temperature selective heat absorbing coating |
CN103105011A (en) * | 2013-01-31 | 2013-05-15 | 中国科学院上海技术物理研究所 | Solar selective absorbing film series suitable for medium-high temperature heat usage and preparation method thereof |
CN103557612A (en) * | 2013-10-31 | 2014-02-05 | 常州龙腾太阳能热电设备有限公司 | High-temperature hydrogen-permeation-resisting clad layer structure on surface of solar heat collection pipe inner pipe |
US20170153045A1 (en) * | 2015-11-27 | 2017-06-01 | Metal Industries Research & Development Centre | Solar absorption structure |
Non-Patent Citations (1)
Title |
---|
王治乐: "《薄膜光学与真空镀膜技术》", 30 March 2016, 哈尔滨工业大学出版社 * |
Also Published As
Publication number | Publication date |
---|---|
CN108505002B (en) | 2020-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102121757B (en) | Non-vacuum solar spectrum selective absorption coating and preparation method thereof | |
CN101666557B (en) | Non-vacuum solar spectrum selective absorption film and preparation method thereof | |
CN201218622Y (en) | Selective solar energy absorbing coating | |
CN101876490B (en) | Solar energy medium-high temperature selective heat absorbing coating | |
CN102501459A (en) | Medium-and-high-temperature solar selective absorption coating and preparation method thereof | |
CN107270564B (en) | A kind of sunlight heat absorber coatings | |
WO2020119680A1 (en) | Superhydrophobic diamond-like composite layer structure and preparation method therefor | |
CN103234294A (en) | Film system structure of moderate and high temperature solar energy selective absorption coating and production method thereof | |
CN103255377B (en) | A kind of nano combined Cr-Al-O solar spectrum Selective absorber coating and preparation method thereof | |
CN108917210A (en) | A kind of nano combined photothermal conversion coating of auto-dope and preparation method thereof | |
CN106500374B (en) | A kind of biphase composite solar absorber coatings and manufacturing method | |
CN103302917A (en) | Dual-absorption-layer TiON weather-resistant photothermal coating and preparation method thereof | |
CN208395261U (en) | A kind of region surface plasma enhancing ultrathin wideband composite absorption film | |
CN104891825A (en) | Scratch-resistant temperable single-silver low-radiation coated glass | |
CN110318027A (en) | A method of low reflection silver-molybdenum alloy film is prepared on silver strip surface | |
CN108570649A (en) | A kind of region surface plasma enhancing ultrathin wideband composite absorption film | |
CN1584445A (en) | NiCrOxNy solar spectrum selective absorbing thin-membrane and preparing method thereof | |
CN108505002A (en) | A kind of preparation method of the ultra-thin composite absorption film of region surface plasma enhancing | |
CN105444443B (en) | Solar selectively absorbing coating and preparation method thereof | |
CN106403329A (en) | High-temperature solar selective absorbing coating and preparation method thereof | |
CN108645061B (en) | Multilayer composite solar spectrum selective absorption coating and preparation method thereof | |
CN106568207B (en) | High temperature coating for selective absorption of sunlight spectrum and preparation method thereof | |
CN109972111A (en) | A kind of highly doped MoOxBase photothermal conversion coating and preparation method thereof | |
CN109338296A (en) | A kind of zirconium diboride-oxidation zirconium base high temperature solar absorber coatings and preparation method thereof | |
CN106958005A (en) | A kind of refractory metal ceramic solar spectral selective absorbing coating and preparation method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |