CN108503392B - Liquid high-resistance layer for zinc oxide piezoresistor - Google Patents
Liquid high-resistance layer for zinc oxide piezoresistor Download PDFInfo
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- CN108503392B CN108503392B CN201810314337.8A CN201810314337A CN108503392B CN 108503392 B CN108503392 B CN 108503392B CN 201810314337 A CN201810314337 A CN 201810314337A CN 108503392 B CN108503392 B CN 108503392B
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 22
- 239000007788 liquid Substances 0.000 title claims abstract description 20
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 10
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 claims abstract description 8
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(II) nitrate Inorganic materials [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000010304 firing Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract description 2
- 238000004886 process control Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
- C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
Liquid high-resistance layer for zinc oxide piezoresistor and its compositionThe formula comprises Bi (NO)3)3、Co(NO3)2、Mn(NO3)2、CH3COOLi, the preparation method is that the raw materials in the formula are mixed with a solvent and are dissolved by heating, and the use method is that the formula solution is coated on the side face of the resistance card. The beneficial effects are as follows: through formula adjustment of the high-resistance layer and process control, shrinkage rates of the body of the resistor disc and the glaze layer are matched, the problem of side insulation of the resistor disc is solved, and square wave through-flow capacity of the resistor disc is improved. The fluctuation of the glaze layer thickness caused by the inconsistent pre-firing shrinkage rate is reduced, the resistor disc has no cracks, and the process is more stable.
Description
Technical Field
The invention relates to the field of zinc oxide piezoresistor production, in particular to a liquid high-resistance layer for a zinc oxide piezoresistor and a configuration and use method thereof.
Background
The existing manufacturing method of the zinc oxide resistance card is better applied due to stable process and high product qualification rate, but has the defects. Firstly, the manufacturing process of the high-resistance layer is complex, and the stability of the glaze slip is poor; secondly, the uniformity of the glaze layer is poor, and the thickness of the glaze layer is greatly influenced by the firing shrinkage; thirdly, the voltage ratio of the resistance chip is poor, and the current capacity of the resistance chip is limited.
With the continuous improvement of the technical grade of products, the requirements on the performance of the products are higher and higher, the original voltage ratio performance cannot meet the requirements, and the development of low-voltage ratio and high-through-flow resistance cards is urgently needed.
Disclosure of Invention
The invention aims to solve the problems and designs a liquid high-resistance layer for a zinc oxide piezoresistor. The specific design scheme is as follows:
a liquid high-resistance layer for zinc oxide piezoresistor,
the formula comprises Bi (NO)3)3、Co(NO3)2、Mn(NO3)2、CH3COOLi，
The preparation method comprises mixing the raw materials in the formula with solvent, heating for dissolving,
the use method of the resistor disc comprises the step of coating the formula solution on the side face of the resistor disc.
The weight parts of each component in the formula are Bi (NO)3)3: 1 to 3 parts of Co (NO)3)2: 0.5 to 1 portion of Mn (NO)3)2: less than 1 part, CH3COOLi: less than 0.1 part.
The solvent comprises one of water, alcohol and deionized water, and the mass portion of the solvent is 95-98 portions.
The resistance card is of a cylindrical structure, the side face of the resistance card is the axial side end face of the resistance card, and the radial side end face of the resistance card is the bottom face and the top face.
The coating operation is performed after the resistor disc forming operation and before the glue discharging operation.
Soluble salt is used as a raw material, so that the manufacturing process of the high-resistance layer is simplified, and the process application is easier to control; reasonable introduction amount of various raw materials.
The liquid high-resistance layer for the zinc oxide piezoresistor obtained by the technical scheme has the beneficial effects that:
through formula adjustment of the high-resistance layer and process control, shrinkage rates of the body of the resistor disc and the glaze layer are matched, the problem of side insulation of the resistor disc is solved, and square wave through-flow capacity of the resistor disc is improved. The fluctuation of the glaze layer thickness caused by the inconsistent pre-firing shrinkage rate is reduced, the resistor disc has no cracks, and the process is more stable.
Drawings
FIG. 1 is a table showing the residual voltage measurement data of a D62 resistor disc after a liquid high-resistance layer for a zinc oxide piezoresistor according to the invention is prepared and coated according to the mass portions in example 1;
FIG. 2 is a table showing the residual voltage measurement data of a D62 resistor disc after a liquid high-resistance layer for a zinc oxide piezoresistor according to the invention is prepared and coated according to the mass portions in example 1;
FIG. 3 is a table showing the residual voltage measurement data of a D62 resistor disc after the liquid high-resistance layer for a zinc oxide piezoresistor is prepared and coated according to the mass fraction in example 1;
FIG. 4 is a schematic structural diagram of a coating position of a liquid high-resistance layer for a zinc oxide piezoresistor according to the invention;
in the figure 1, a resistance sheet; 2. a high resistance layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
A liquid high-resistance layer for zinc oxide piezoresistor,
the formula comprises Bi (NO)3)3、Co(NO3)2、Mn(NO3)2、CH3COOLi，
The preparation method comprises mixing the raw materials in the formula with solvent, heating for dissolving,
the use method of the resistor disc comprises the step of coating the formula solution on the side face of the resistor disc.
The weight parts of each component in the formula are Bi (NO)3)3: 1 to 3 parts of Co (NO)3)2: 0.5 to 1 portion of Mn (NO)3)2: less than 1 part, CH3COOLi: less than 0.1 part.
The solvent comprises one of water, alcohol and deionized water, and the mass portion of the solvent is 95-98 portions.
Fig. 4 is a schematic structural diagram of the coating position of the liquid high-resistance layer for the zinc oxide piezoresistor, wherein the resistor disc is in a cylindrical structure, the side surface of the resistor disc is the axial side end surface of the resistor disc, and the radial side end surface of the resistor disc is the bottom surface and the top surface.
The coating operation is performed after the resistor disc forming operation and before the glue discharging operation.
Soluble salt is used as a raw material, so that the manufacturing process of the high-resistance layer is simplified, and the process application is easier to control; reasonable introduction amount of various raw materials.
Example 1:
selecting a resistance card with a million-volt formula D62 specification, and preparing a high-resistance layer according to the following modes: 1% of bismuth nitrate, 0.5% of cobalt nitrate, 1% of manganese nitrate, 0.05% of lithium acetate and 97.45% of deionized water. Various raw materials are prepared and then are converted into solution, the solution is uniformly coated on the side surface of each resistance card, 2g of each resistance card is coated on each resistance card, then the resistance cards are subjected to the subsequent manufacturing processes of normal glue removal, burning, grinding, aluminum spraying and the like, and then the test is carried out,
fig. 1 is a table of residual voltage measurement data of a D62 resistor disc after the liquid high-resistance layer for the zinc oxide piezoresistor according to the invention is configured and coated according to the mass parts in example 1, and as shown in fig. 1, a square wave capacity test is performed on the resistor disc for 600A 18 times, the resistor disc is intact for 800A 18 times, the experimental capacity is continuously increased for 1000A 18 times, the resistor disc is intact, and when the experimental capacity is continuously increased to 1050A, cracks appear on the side surface of the resistor disc.
Example 2:
the high-resistance layer is prepared in the following way: 3% of bismuth nitrate, 0.5% of cobalt nitrate, 1% of manganese nitrate and 95.50% of alcohol. Various raw materials are prepared and then are converted into solution, resistance cards with the million volt formula D62 specification are selected, the solution is evenly coated on the side faces of the resistance cards, each resistance card is 2g, then the resistance cards are subjected to the subsequent manufacturing processes of normal glue removal, firing, grinding, aluminum spraying and the like, then the test is carried out,
fig. 2 is a table showing residual voltage measurement data of a D62 resistor disc after the liquid high-resistance layer for a zinc oxide piezoresistor according to the present invention is configured and coated according to the mass portion in example 1, and as shown in fig. 2, a square wave capacity experiment is performed on the resistor disc, and a 600A resistor disc breaks down along the side surface.
Example 3:
the high-resistance layer is prepared in the following way: 1% of bismuth nitrate, 1% of cobalt nitrate, 0.5% of manganese nitrate and 97.5% of deionized water. Various raw materials are prepared and then are converted into solution, resistance cards with the million volt formula D62 specification are selected, the solution is evenly coated on the side faces of the resistance cards, each resistance card is 2g, then the resistance cards are subjected to the subsequent manufacturing processes of normal glue removal, firing, grinding, aluminum spraying and the like, then the test is carried out,
fig. 3 is a table of residual voltage measurement data of a D62 resistor disc after the liquid high-resistance layer for a zinc oxide varistor of the present invention is configured and coated according to the parts by mass described in example 1, and as shown in fig. 3, the square wave capacity test is performed on the resistor disc for 600a 18 times, the resistor disc is intact, the test capacity is increased for 800a 18 times, and cracks appear on the side surface of the resistor disc.
The technical solutions described above only represent the preferred technical solutions of the present invention, and some possible modifications to some parts of the technical solutions by those skilled in the art all represent the principles of the present invention, and fall within the protection scope of the present invention.
Claims (4)
1. A liquid high-resistance layer for zinc oxide piezoresistor is characterized in that,
the formula comprises Bi (NO)3)3、Co(NO3)2、Mn(NO3)2、CH3COOLi，
The preparation method comprises mixing the raw materials in the formula with solvent, heating for dissolving,
the application method comprises coating the formula solution on the side surface of the resistor,
the weight parts of each component in the formula are Bi (NO)3)3: 1 to 3 parts of Co (NO)3)2: 0.5 to 1 portion of Mn (NO)3)2: less than 1 part, CH3COOLi: less than 0.1 part.
2. The liquid high-resistance layer for a zinc oxide varistor as claimed in claim 1, wherein said solvent comprises one of water and alcohol, and the mass fraction of said solvent is 95-98 parts.
3. The liquid high resistance layer for a zinc oxide varistor as claimed in claim 1, wherein said varistor has a cylindrical structure, and the side surface of said varistor is the axial side end surface of said varistor, and the radial side end surface of said varistor is the bottom surface and the top surface.
4. The liquid high resistance layer for a zinc oxide varistor as claimed in claim 1, wherein the coating operation is performed after the formation operation of said varistor and before the discharge operation.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810314337.8A CN108503392B (en) | 2018-04-10 | 2018-04-10 | Liquid high-resistance layer for zinc oxide piezoresistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810314337.8A CN108503392B (en) | 2018-04-10 | 2018-04-10 | Liquid high-resistance layer for zinc oxide piezoresistor |
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| Publication Number | Publication Date |
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| CN108503392A CN108503392A (en) | 2018-09-07 |
| CN108503392B true CN108503392B (en) | 2020-01-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7196206B2 (en) * | 2018-07-27 | 2022-12-26 | 清華大学 | Liquid high resistance layer used for zinc oxide varistors |
| CN109485406A (en) * | 2018-11-28 | 2019-03-19 | 清华大学 | Improve the through-flow new liquid side high-resistance layer preparation process of Zinc-oxide piezoresistor 2ms square wave |
| CN109553410A (en) * | 2018-11-28 | 2019-04-02 | 清华大学 | The preparation process of novel inorganic resistive formation for ZnO varistor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1034822A (en) * | 1988-02-02 | 1989-08-16 | 西安交通大学 | The manufacture method of zinc oxide resistance sheet |
| US4894185A (en) * | 1986-12-02 | 1990-01-16 | Compagnie Europeenne De Compasants Electroniques Lcc | Coprecipitation method for the manufacture of zinc oxide based doped powders |
| CN1541975A (en) * | 2003-04-28 | 2004-11-03 | 上海电瓷厂 | Compounding recipe and production technique of single firing zinc oxide valve plate side high-ohmic resistor |
| CN103646738A (en) * | 2013-12-13 | 2014-03-19 | 中国西电电气股份有限公司 | Preparation method of high-resistance layer for side surface of zinc oxide resistor disc |
| CN105869810A (en) * | 2016-04-06 | 2016-08-17 | 清华大学 | Fabrication method for side-surface insulation layer of high-voltage gradient zinc oxide voltage-sensitive valve |
-
2018
- 2018-04-10 CN CN201810314337.8A patent/CN108503392B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4894185A (en) * | 1986-12-02 | 1990-01-16 | Compagnie Europeenne De Compasants Electroniques Lcc | Coprecipitation method for the manufacture of zinc oxide based doped powders |
| CN1034822A (en) * | 1988-02-02 | 1989-08-16 | 西安交通大学 | The manufacture method of zinc oxide resistance sheet |
| CN1541975A (en) * | 2003-04-28 | 2004-11-03 | 上海电瓷厂 | Compounding recipe and production technique of single firing zinc oxide valve plate side high-ohmic resistor |
| CN103646738A (en) * | 2013-12-13 | 2014-03-19 | 中国西电电气股份有限公司 | Preparation method of high-resistance layer for side surface of zinc oxide resistor disc |
| CN105869810A (en) * | 2016-04-06 | 2016-08-17 | 清华大学 | Fabrication method for side-surface insulation layer of high-voltage gradient zinc oxide voltage-sensitive valve |
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