CN108503392A - Liquid high layer for Zinc-oxide piezoresistor - Google Patents
Liquid high layer for Zinc-oxide piezoresistor Download PDFInfo
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- CN108503392A CN108503392A CN201810314337.8A CN201810314337A CN108503392A CN 108503392 A CN108503392 A CN 108503392A CN 201810314337 A CN201810314337 A CN 201810314337A CN 108503392 A CN108503392 A CN 108503392A
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- resistor disc
- zinc
- formula
- resistor
- liquid high
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
- C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
A kind of liquid high layer for Zinc-oxide piezoresistor, formula includes Bi (NO3)3、Co(NO3)2、Mn(NO3)2、CH3COOLi, configuration method are to mix a raw material in formula with solvent, and by dissolving by heating, and application method is that formula solution is coated on resistor-piece side.Advantage is：It is adjusted by high resistant layer formula and the control of technique so that the ontology of resistor disc is matched with the shrinking percentage of glaze layer, has both solved the problems, such as the side insulation of resistor disc, while improving the square wave discharge capacity of resistor disc.Reduce originally because of the fluctuation of the inconsistent glazed thickness brought of pre-burning shrinking percentage, resistor disc is not cracked, more stable in technique.
Description
Technical field
The present invention relates to Zinc-oxide piezoresistor production field, especially a kind of liquid for Zinc-oxide piezoresistor is high
Resistance layer and its configuration, application method.
Background technology
The manufacturing method of existing zinc oxide resistance sheet, because of its process stabilizing, product qualification rate is high and is preferably answered
With, but its there is also disadvantages.First, resistive formation complex manufacturing technology, glaze slip stability is poor；Second is that glaze layer lack of homogeneity, and glaze layer
Thickness is affected by percent of firing shrinkage；Third, the pressure ratio of resistor disc is poor, the through-current capability of resistor disc is restricted.
With the continuous improvement of product technology grade, the requirement to properties of product is also higher and higher, original pressure ratio performance
Requirement is had been unable to meet, the resistor disc of exploitation low-pressure ratio, high throughflow is badly in need of.
Invention content
The purpose of the present invention is to solve the above problems, devise a kind of liquid high for Zinc-oxide piezoresistor
Layer.Specifically design scheme is：
A kind of liquid high layer for Zinc-oxide piezoresistor,
Its formula includes Bi (NO3)3、Co(NO3)2、Mn(NO3)2、CH3COOLi,
Its configuration method is to mix a raw material in formula with solvent, and by dissolving by heating,
Its application method is that formula solution is coated on resistor-piece side.
The mass fraction of each ingredient is respectively Bi (NO in the formula3)3：1 part -3 parts, Co (NO3)2：0.5 part -1 part, Mn
(NO3)2：Less than 1 part, CH3COOLi：Less than 0.1 part.
The solvent includes one kind in water, alcohol, deionized water, and the mass fraction of the solvent is 95 parts -98 parts.
The side of the cylindrical structure of resistor disc, the resistor disc is resistor disc axial direction side end face, the electricity
The radial side end face for hindering piece is bottom surface, top surface.
Operation is coated after the resistor disc operations for forming, before dumping operation.
Raw material use soluble-salt, simplify the manufacture craft of resistive formation, and to be easier to control using upper in technique
System；The various rational introduction volumes of raw material.
The liquid high layer for Zinc-oxide piezoresistor that above-mentioned technical proposal through the invention obtains, beneficial to effect
Fruit is：
It being adjusted by high resistant layer formula and the control of technique so that the ontology of resistor disc is matched with the shrinking percentage of glaze layer,
Both it had solved the problems, such as the side insulation of resistor disc, while having improved the square wave discharge capacity of resistor disc.Reduce originally because of pre-burning
The fluctuation of the inconsistent glazed thickness brought of shrinking percentage, resistor disc is not cracked, more stable in technique.
Description of the drawings
Fig. 1 is the liquid high layer of the present invention for Zinc-oxide piezoresistor according to mass parts described in embodiment 1
After number configuration, coating, the residual voltage measurement data table of D62 resistor discs；
Fig. 2 is the liquid high layer of the present invention for Zinc-oxide piezoresistor according to mass parts described in embodiment 1
After number configuration, coating, the residual voltage measurement data table of D62 resistor discs；
Fig. 3 is the liquid high layer of the present invention for Zinc-oxide piezoresistor according to mass parts described in embodiment 1
After number configuration, coating, the residual voltage measurement data table of D62 resistor discs；
The structural schematic diagram of Fig. 4 inventions liquid high layer coating position for Zinc-oxide piezoresistor；
1, resistor disc in figure；2, resistive formation.
Specific implementation mode
The present invention is specifically described below in conjunction with the accompanying drawings.
A kind of liquid high layer for Zinc-oxide piezoresistor,
Its formula includes Bi (NO3)3、Co(NO3)2、Mn(NO3)2、CH3COOLi,
Its configuration method is to mix a raw material in formula with solvent, and by dissolving by heating,
Its application method is that formula solution is coated on resistor-piece side.
The mass fraction of each ingredient is respectively Bi (NO in the formula3)3：1 part -3 parts, Co (NO3)2：0.5 part -1 part, Mn
(NO3)2：Less than 1 part, CH3COOLi：Less than 0.1 part.
The solvent includes one kind in water, alcohol, deionized water, and the mass fraction of the solvent is 95 parts -98 parts.
The structural schematic diagram of Fig. 4 inventions liquid high layer coating position for Zinc-oxide piezoresistor, the electricity
The cylindrical structure of piece is hindered, the side of the resistor disc is resistor disc axial direction side end face, the radial side of the resistor disc
Face is bottom surface, top surface.
Operation is coated after the resistor disc operations for forming, before dumping operation.
Raw material use soluble-salt, simplify the manufacture craft of resistive formation, and to be easier to control using upper in technique
System；The various rational introduction volumes of raw material.
Embodiment 1：
Million volts of formula D62 specific resistance pieces are selected, and match resistive formation in the following way：Bismuth nitrate 1%, cobalt nitrate
0.5%, manganese nitrate 1%, lithium acetate 0.05%, deionized water 97.45%.Various raw materials prepare rear chemical solution, even application
In resistor-piece side, each resistor disc 2g, then the normal dumping of resistor disc progress, firing, grinding, aluminium-plated etc. are follow-up makes work
Then skill is tested,
Fig. 1 is the liquid high layer of the present invention for Zinc-oxide piezoresistor according to mass parts described in embodiment 1
After number configuration, coating, the residual voltage measurement data table of D62 resistor discs, as shown in Figure 1, square wave capacity test is carried out to resistor disc,
600A 18 times, resistor disc is intact, and carries out 800A 18 times, and resistor disc is intact, continues to increase experiment capacity, 1000A 18 times,
Resistor disc is intact, and when continuing to increase to 1050A, resistor-piece side is cracked.
Embodiment 2：
Match resistive formation in the following way：Bismuth nitrate 3%, cobalt nitrate 0.5%, manganese nitrate 1%, alcohol 95.50%.It is various
Raw material prepares rear chemical solution, and selects million volts of formula D62 specific resistance pieces, by solution even application in resistor-piece side,
Each resistor disc 2g, then the subsequent manufacturing processes such as the normal dumping of resistor disc progress, firing, grinding, aluminium-plated, are then surveyed
Examination,
Fig. 2 is the liquid high layer of the present invention for Zinc-oxide piezoresistor according to mass parts described in embodiment 1
After number configuration, coating, the residual voltage measurement data table of D62 resistor discs, as shown in Fig. 2, square wave capacity test is carried out to resistor disc,
600A resistor discs laterally puncture.
Embodiment 3：
Match resistive formation in the following way：Bismuth nitrate 1%, cobalt nitrate 1%, manganese nitrate 0.5%, deionized water 97.5%.
Various raw materials prepare rear chemical solution, and select million volts of formula D62 specific resistance pieces, by solution even application in resistor disc side
Face, each resistor disc 2g, then resistor disc carry out the subsequent manufacturing processes such as normal dumping, firing, grinding, aluminium-plated, then into
Row test,
Fig. 3 is the liquid high layer of the present invention for Zinc-oxide piezoresistor according to mass parts described in embodiment 1
After number configuration, coating, the residual voltage measurement data table of D62 resistor discs, as shown in figure 3, square wave capacity test is carried out to resistor disc,
600A 18 times, resistor disc is intact, increases experiment capacity, 800A 18 times, resistor-piece side is cracked.
Above-mentioned technical proposal only embodies the optimal technical scheme of technical solution of the present invention, those skilled in the art
The principle of the present invention is embodied to some variations that some of which part may be made, belongs to the scope of protection of the present invention it
It is interior.
Claims (5)
1. a kind of liquid high layer for Zinc-oxide piezoresistor, which is characterized in that
Its formula includes Bi (NO3)3、Co(NO3)2、Mn(NO3)2、CH3COOLi,
Its configuration method is to mix a raw material in formula with solvent, and by dissolving by heating,
Its application method is that formula solution is coated on resistor-piece side.
2. according to the liquid high layer for Zinc-oxide piezoresistor described in claim 1, which is characterized in that the formula
In the mass fraction of each ingredient be respectively Bi (NO3)3：1 part -3 parts, Co (NO3)2：0.5 part -1 part, Mn (NO3)2：Less than 1 part,
CH3COOLi：Less than 0.1 part.
3. according to the liquid high layer for Zinc-oxide piezoresistor described in claim 1, which is characterized in that the solvent
Including one kind in water, alcohol, deionized water, the mass fraction of the solvent is 95 parts -98 parts.
4. according to the liquid high layer for Zinc-oxide piezoresistor described in claim 1, which is characterized in that the resistance
The side of the cylindrical structure of piece, the resistor disc is resistor disc axial direction side end face, the radial side end face of the resistor disc
For bottom surface, top surface.
5. according to the liquid high layer for Zinc-oxide piezoresistor described in claim 1, which is characterized in that coating operation
After the resistor disc operations for forming, before dumping operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810314337.8A CN108503392B (en) | 2018-04-10 | 2018-04-10 | Liquid high-resistance layer for zinc oxide piezoresistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810314337.8A CN108503392B (en) | 2018-04-10 | 2018-04-10 | Liquid high-resistance layer for zinc oxide piezoresistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108503392A true CN108503392A (en) | 2018-09-07 |
| CN108503392B CN108503392B (en) | 2020-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810314337.8A Active CN108503392B (en) | 2018-04-10 | 2018-04-10 | Liquid high-resistance layer for zinc oxide piezoresistor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109485406A (en) * | 2018-11-28 | 2019-03-19 | 清华大学 | Improve the through-flow new liquid side high-resistance layer preparation process of Zinc-oxide piezoresistor 2ms square wave |
| CN109553410A (en) * | 2018-11-28 | 2019-04-02 | 清华大学 | The preparation process of novel inorganic resistive formation for ZnO varistor |
| WO2020019273A1 (en) * | 2018-07-27 | 2020-01-30 | 清华大学 | Liquid high-resistance layer for zinc oxide varistor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1034822A (en) * | 1988-02-02 | 1989-08-16 | 西安交通大学 | The manufacture method of zinc oxide resistance sheet |
| US4894185A (en) * | 1986-12-02 | 1990-01-16 | Compagnie Europeenne De Compasants Electroniques Lcc | Coprecipitation method for the manufacture of zinc oxide based doped powders |
| CN1541975A (en) * | 2003-04-28 | 2004-11-03 | 上海电瓷厂 | Compounding recipe and production technique of single firing zinc oxide valve plate side high-ohmic resistor |
| CN103646738A (en) * | 2013-12-13 | 2014-03-19 | 中国西电电气股份有限公司 | Preparation method of high-resistance layer for side surface of zinc oxide resistor disc |
| CN105869810A (en) * | 2016-04-06 | 2016-08-17 | 清华大学 | Fabrication method for side-surface insulation layer of high-voltage gradient zinc oxide voltage-sensitive valve |
-
2018
- 2018-04-10 CN CN201810314337.8A patent/CN108503392B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4894185A (en) * | 1986-12-02 | 1990-01-16 | Compagnie Europeenne De Compasants Electroniques Lcc | Coprecipitation method for the manufacture of zinc oxide based doped powders |
| CN1034822A (en) * | 1988-02-02 | 1989-08-16 | 西安交通大学 | The manufacture method of zinc oxide resistance sheet |
| CN1541975A (en) * | 2003-04-28 | 2004-11-03 | 上海电瓷厂 | Compounding recipe and production technique of single firing zinc oxide valve plate side high-ohmic resistor |
| CN103646738A (en) * | 2013-12-13 | 2014-03-19 | 中国西电电气股份有限公司 | Preparation method of high-resistance layer for side surface of zinc oxide resistor disc |
| CN105869810A (en) * | 2016-04-06 | 2016-08-17 | 清华大学 | Fabrication method for side-surface insulation layer of high-voltage gradient zinc oxide voltage-sensitive valve |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020019273A1 (en) * | 2018-07-27 | 2020-01-30 | 清华大学 | Liquid high-resistance layer for zinc oxide varistor |
| CN109485406A (en) * | 2018-11-28 | 2019-03-19 | 清华大学 | Improve the through-flow new liquid side high-resistance layer preparation process of Zinc-oxide piezoresistor 2ms square wave |
| CN109553410A (en) * | 2018-11-28 | 2019-04-02 | 清华大学 | The preparation process of novel inorganic resistive formation for ZnO varistor |
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| Publication number | Publication date |
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| CN108503392B (en) | 2020-01-21 |
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