CN108502841A - A kind of electronic equipment and its manufacturing method that can realize supersonic sensing - Google Patents
A kind of electronic equipment and its manufacturing method that can realize supersonic sensing Download PDFInfo
- Publication number
- CN108502841A CN108502841A CN201810420237.3A CN201810420237A CN108502841A CN 108502841 A CN108502841 A CN 108502841A CN 201810420237 A CN201810420237 A CN 201810420237A CN 108502841 A CN108502841 A CN 108502841A
- Authority
- CN
- China
- Prior art keywords
- ultrasonic sensor
- sensor circuit
- substrate
- cover plate
- electronic equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000011230 binding agent Substances 0.000 claims abstract description 19
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 239000011159 matrix material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/48—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using wave or particle radiation means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Abstract
The present invention discloses a kind of electronic equipment that can realize supersonic sensing, including glass substrate；Ultrasonic sensor circuit on substrate；External lead wire under substrate；Electric connecting part, the electric connecting part run through the upper and lower surface of substrate, and the upper end of the electric connecting part is electrically connected with the ultrasonic sensor circuit, and lower end is electrically connected with the external lead wire；Cover plate above the ultrasonic sensor circuit includes binder course between the cover plate and the ultrasonic sensor circuit.Joint thickness of the present invention substantially reduces, and reduces ultrasonic signal and is emitting and the loss in receive process.
Description
Technical field
The invention patent relates to supersonic sensing fields.
Background technology
Traditional ultrasonic sensor is by the monomer ultrasonic sensor assembling based on piezoelectric ceramics, and this scheme can not
Realize the ultrasonic sensor of high density dot matrix, high density dot matrix ultrasonic sensor can be manufactured by mems techniques, but cost
Excessively high, high density dot matrix ultrasonic sensor can also be based on TFT techniques, can be used for fingerprint collecting, TFT on the glass substrate
（Thin film transistor (TFT)）The structure that piezoelectric membrane is covered on array realizes the ultrasonic sensor structure of high density dot matrix, the ultrasonic wave
Sensing arrangement is as shown in Figure 1.
Such as Fig. 1, ultrasonic sensor circuit 16 and pad 14 are arranged on glass substrate 11；Ultrasonic sensor circuit 16
Including forming pixel circuit and piezoelectric membrane etc. on the substrate 11, pixel circuit includes tft array, and tft array is deposited on
On glass substrate 11；Include pad 14 on substrate 11, external lead wire 15 is arranged in the top of substrate, and external lead wire 15 with it is super
Sonic sensor circuit 16 is electrically connected by pad；Cover plate 13 is arranged by binder course 12 in ultrasonic sensor circuit 16
Top.
The ultrasonic signal that ultrasonic sensor circuit 16 emits passes through binder course 12 and 13 detected target of cover plate anti-
It penetrates, the ultrasonic signal after reflection is received using cover plate 13 and binder course 12 by ultrasonic sensor circuit 16, due to knot
It is low to close 12 rigidity of layer, stronger, the thickness positive correlation of ultrasonic signal loss and binder course is received to ultrasonic wave.External lead wire is long-range
In the thickness of ultrasonic sensor circuit, raised the installation site of cover plate 13, cause joint thickness by external lead wire and
The thickness difference of ultrasonic sensor circuit influences, and the thickness difference is bigger, then joint thickness is thicker, and ultrasonic signal loss is got over
Greatly.
Invention content
The present invention discloses a kind of electronic equipment that can realize supersonic sensing, including glass substrate；Ultrasound on substrate
Wave sensor circuit；External lead wire under substrate；Electric connecting part, the electric connecting part run through the upper and lower surface of substrate, the electricity
The upper end of connecting component is electrically connected with the ultrasonic sensor circuit, and lower end is electrically connected with the external lead wire；The ultrasound
Cover plate above wave sensor circuit includes binder course between the cover plate and the ultrasonic sensor circuit.
External lead wire is mounted on the lower section of substrate by the present invention, and the position of cover plate is lowered, therefore ultrasonic sensor
The thickness of binder course above circuit substantially reduces, and reduces ultrasonic signal and is emitting and the loss in receive process.
Description of the drawings
Fig. 1 is the existing electronic equipment that can realize supersonic sensing；
Fig. 2 is the electronic equipment that can realize supersonic sensing of the embodiment of the present invention；
Fig. 3 A-3C are the schematic diagrames of the manufacturing method of the electronic equipment that can realize supersonic sensing of the embodiment of the present invention.
Specific implementation mode
As shown in Fig. 2, the electronic equipment of the present invention includes substrate 21, which is glass substrate.It is formed on substrate 21
Ultrasonic sensor circuit 26.External lead wire 25 is arranged in 21 lower section of substrate, which can be flexible PCB or beat
The metal wire that line is formed.Electric connecting part runs through the upper and lower surface of substrate 21, and electric connecting part includes conductive component and powers on
Pole 241 and lower electrode 242 in the present embodiment, have a through-hole 28 in substrate 21, filling conductive materials form described lead in through-hole 28
Electrical components, the top electrode 241 of 21 upper surface of substrate are in electrical contact with the upper end of the conductive component, the lower electrode of 21 lower surface of substrate
242 are in electrical contact with the lower end of the conductive component, the upper end of electric connecting part（Top electrode）With the ultrasonic sensor circuit
26 electrical connections, lower end（Lower electrode）It is electrically connected with the external lead wire 25.But embodiment of the present invention is not limited only to the party
Case, electric connecting part can with right and wrong through-hole form, for example, electric connecting part may include the conductive fiber in substrate, in another example,
Electric connecting part may include the conductive component for being formed in 21 side wall of substrate.A top electrode 241 and one are merely illustrated in figure
Lower electrode 242, it will be appreciated by those skilled in the art that multiple top electrodes 241 and multiple can be respectively formed above and below substrate 21
Lower electrode 242；The top electrode is realized by conductive layer 27 and is electrically connected with ultrasonic sensor circuit, it is preferable that conductive layer 27
It is formed simultaneously with the electrode of ultrasonic sensor circuit.Cover plate 23 is arranged on ultrasonic sensor circuit 26, cover plate 23
Include binder course 22 between ultrasonic sensor circuit 26.
The ultrasonic signal that ultrasonic sensor circuit 26 emits reaches detection mesh by binder course 22 and cover plate 23
Mark is then passed through cover plate 23 and binder course 22 is received by ultrasonic sensor circuit 26 after the reflection of ultrasonic wave detected target.By
The integral level height that will not be raised at the back side of substrate 21 above substrate is set in external lead wire 25, therefore relative to existing
Technology, the distance between cover plate 23 and ultrasonic sensor circuit 26 are reduced, and the thickness of binder course 22 is lowered, and reduce super
The loss of acoustic signals.
Ultrasonic sensor circuit includes thin film transistor (TFT), piezoelectric material and electrode, and ultrasonic sensor circuit includes
The ultrasonic sensor units that one or more is made of thin film transistor (TFT), piezoelectric material and electrode, the thin film transistor (TFT)
Transistor is formed on the glass substrate.
The present embodiment also provides a kind of method preparing above-mentioned electronic equipment, and this approach includes the following steps：
（1）Substrate 21 is provided, which is glass substrate.
（2）Such as Fig. 3 A, through-hole is formed in the substrate 21, it can be by modes such as laser ablation or etchings in glass
Through-hole 28 is formed in substrate, filling conductive materials form conductive component in through-hole, and shape is distinguished above and below the substrate 21
At the top electrode 241 and lower electrode 242 for being in electrical contact the conductive component upper and lower side, can be respectively formed above and below substrate 21 more
A top electrode 241 and multiple lower electrodes 242 can form multiple through-holes in substrate 21.
（3）Such as Fig. 3 B, ultrasonic sensor circuit 26 is formed on the base plate (21, and the ultrasonic wave on the substrate 21 is passed
Sensor circuit 26 is electrically connected with the top electrode 241 by conductive layer 27, formed ultrasonic sensor circuit 26 the step of include
Tft array is deposited on the glass substrate, covering piezoelectric membrane, forms electrode.Preferably, the conductive layer 27 and ultrasonic wave
The electrode of sensor circuit 26 is formed with technique simultaneously, and the electrode of the conductive layer 27 and the ultrasonic sensor circuit 26 can be with
For metal-oxide film（Such as ito thin film）Or metallic film etc..Due to step（2）Middle generally use chemical method is in through-holes
It fills conductive materials and forms conductive component, and in forming ultrasonic sensor circuitry processes, the TFT of vapor deposition and thereon
If electrode be immersed in chemical liquids, be easily contaminated, it is therefore preferred that the through-hole being initially formed in substrate 21 and filling
Conductive materials form conductive component and form upper/lower electrode, re-form ultrasonic sensor circuit 26, but the present invention protects model
It encloses and is not limited only to which, forming ultrasonic sensor, formation conductive component and formation upper/lower electrode can be in no particular order
Sequentially.
（4）Such as Fig. 3 C, the lower electrode 242 is electrically connected with the external lead wire 25 of 21 lower section of substrate, which can
To be the metal wire of flexible PCB or routing formation.Cover plate 23 is arranged above ultrasonic sensor circuit 26, institute
State between cover plate 23 and the ultrasonic sensor circuit 26 includes binder course 22.Cover plate 23 covers ultrasonic sensor electricity
Road 26 and top electrode 241, play a protective role.Since external lead wire 25 is arranged at the back side of substrate 21, substrate will not be raised
The integral level height of top, therefore compared with the existing technology, the distance between cover plate 23 and ultrasonic sensor circuit 26
Reduced, the thickness of binder course 22 is lowered, and reduces the loss of ultrasonic signal.
Note that above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The present invention is not limited to specific embodiments described here, can carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out to the present invention by above example
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
May include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. a kind of electronic equipment that can realize supersonic sensing, which is characterized in that including：
Substrate, the substrate are glass substrate；
Ultrasonic sensor circuit on substrate；
External lead wire under substrate；
Electric connecting part, the electric connecting part run through the upper and lower surface of substrate, the upper end of the electric connecting part and the ultrasonic wave
Sensor circuit is electrically connected, and lower end is electrically connected with the external lead wire；
Cover plate above the ultrasonic sensor circuit includes between the cover plate and the ultrasonic sensor circuit
Binder course.
2. electronic equipment according to claim 1, which is characterized in that the substrate includes through-hole, the electrical connection section
Part includes the conductive component that the conductive materials being filled in the through-hole are constituted.
3. electronic equipment according to claim 2, which is characterized in that the electric connecting part includes and the conductive component
The top electrode of upper end electrical contact and the lower electrode being in electrical contact with the conductive component lower end, the top electrode are passed with the ultrasonic wave
Sensor circuit is electrically connected, and the lower electrode is electrically connected with the external lead wire.
4. electronic equipment according to claim 1, which is characterized in that the ultrasonic sensor circuit includes being formed in institute
State the thin film transistor (TFT) on substrate.
5. electronic equipment according to claim 1, which is characterized in that the ultrasonic sensor circuit includes one or more
A ultrasonic sensor units.
6. electronic equipment according to claim 1, which is characterized in that the ultrasonic wave of the ultrasonic sensor circuit transmission
Signal passes through the binder course and the cover plate, the ultrasonic signal of detected target reflection pass through the cover plate with it is described
Binder course is received by the ultrasonic sensor circuit.
7. a kind of manufacturing method for the electronic equipment that can realize supersonic sensing, which is characterized in that this method includes following step
Suddenly：
（1）Substrate is provided, which is glass substrate；
（2）Through-hole is formed in the substrate, filling conductive materials form conductive component in through-hole, and side is under on the substrate
Side is respectively formed the top electrode for being in electrical contact the conductive component upper and lower ends and lower electrode；
（3）The ultrasonic sensor circuit for forming upper surface of base plate, by the ultrasonic sensor circuit and top electrode electricity
Connection；
（4）The lower electrode is electrically connected with the external lead wire below substrate, cover plate is arranged in the ultrasonic sensor
Include binder course above circuit, between the cover plate and the ultrasonic sensor circuit.
8. manufacturing method according to claim 7, which is characterized in that the ultrasonic sensor circuit includes film crystal
Pipe.
9. manufacturing method according to claim 7, which is characterized in that the ultrasonic sensor circuit includes one or more
A supersonic sensing unit.
10. manufacturing method according to claim 7, which is characterized in that the ultrasound of the ultrasonic sensor circuit transmission
Wave signal passes through the binder course and the cover plate, the ultrasonic signal of detected target reflection to pass through the cover plate and institute
Binder course is stated to be received by the ultrasonic sensor circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810420237.3A CN108502841A (en) | 2018-05-04 | 2018-05-04 | A kind of electronic equipment and its manufacturing method that can realize supersonic sensing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810420237.3A CN108502841A (en) | 2018-05-04 | 2018-05-04 | A kind of electronic equipment and its manufacturing method that can realize supersonic sensing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108502841A true CN108502841A (en) | 2018-09-07 |
Family
ID=63400028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810420237.3A Pending CN108502841A (en) | 2018-05-04 | 2018-05-04 | A kind of electronic equipment and its manufacturing method that can realize supersonic sensing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108502841A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220075978A1 (en) * | 2019-07-04 | 2022-03-10 | Jiangxi Oumaisi Microelectronics Co., Ltd. | Ultrasonic fingerprint recognition assembly and electronic device |
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|---|---|---|---|---|
| JPH01250083A (en) * | 1987-12-25 | 1989-10-05 | Toyo Commun Equip Co Ltd | Magnetic sensor |
| JP2005237174A (en) * | 2004-02-23 | 2005-09-02 | Olympus Corp | Accumulated type electrostatic actuator |
| CN1771575A (en) * | 2004-01-27 | 2006-05-10 | 松下电工株式会社 | Micro relay |
| EP2116474A1 (en) * | 2008-05-10 | 2009-11-11 | Leuze electronic GmbH + Co. KG | Ultrasound sensor |
| CN101638212A (en) * | 2009-09-08 | 2010-02-03 | 华中科技大学 | Wafer-level vacuum encapsulation wire interconnecting structure of micro electro mechanical system and manufacturing method thereof |
| CN101865700A (en) * | 2009-04-15 | 2010-10-20 | 上海沃巴弗电子科技有限公司 | Displacement sensor |
| US20120013222A1 (en) * | 2010-01-19 | 2012-01-19 | Thomas Herzog | Ultrasonic Sensor for Detecting and/or Scanning Objects |
| CN102739180A (en) * | 2011-03-30 | 2012-10-17 | 日本电波工业株式会社 | A manufacturing method of a piezoelectric device and the piezoelectric device manufactured by this method |
| US20150122041A1 (en) * | 2013-11-06 | 2015-05-07 | Sensirion Ag | Pressure sensor |
| CN104677529A (en) * | 2015-02-06 | 2015-06-03 | 北京大学 | Chip structure of pressure gauge and manufacturing method of chip structure |
| WO2017218228A1 (en) * | 2016-06-16 | 2017-12-21 | Qualcomm Incorporated | Fingerprint sensor device and methods thereof |
| CN208234546U (en) * | 2018-05-04 | 2018-12-14 | 李扬渊 | A kind of electronic equipment can be realized supersonic sensing |
-
2018
- 2018-05-04 CN CN201810420237.3A patent/CN108502841A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01250083A (en) * | 1987-12-25 | 1989-10-05 | Toyo Commun Equip Co Ltd | Magnetic sensor |
| CN1771575A (en) * | 2004-01-27 | 2006-05-10 | 松下电工株式会社 | Micro relay |
| JP2005237174A (en) * | 2004-02-23 | 2005-09-02 | Olympus Corp | Accumulated type electrostatic actuator |
| EP2116474A1 (en) * | 2008-05-10 | 2009-11-11 | Leuze electronic GmbH + Co. KG | Ultrasound sensor |
| CN101865700A (en) * | 2009-04-15 | 2010-10-20 | 上海沃巴弗电子科技有限公司 | Displacement sensor |
| CN101638212A (en) * | 2009-09-08 | 2010-02-03 | 华中科技大学 | Wafer-level vacuum encapsulation wire interconnecting structure of micro electro mechanical system and manufacturing method thereof |
| US20120013222A1 (en) * | 2010-01-19 | 2012-01-19 | Thomas Herzog | Ultrasonic Sensor for Detecting and/or Scanning Objects |
| CN102739180A (en) * | 2011-03-30 | 2012-10-17 | 日本电波工业株式会社 | A manufacturing method of a piezoelectric device and the piezoelectric device manufactured by this method |
| US20150122041A1 (en) * | 2013-11-06 | 2015-05-07 | Sensirion Ag | Pressure sensor |
| CN104677529A (en) * | 2015-02-06 | 2015-06-03 | 北京大学 | Chip structure of pressure gauge and manufacturing method of chip structure |
| WO2017218228A1 (en) * | 2016-06-16 | 2017-12-21 | Qualcomm Incorporated | Fingerprint sensor device and methods thereof |
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| CN208234546U (en) * | 2018-05-04 | 2018-12-14 | 李扬渊 | A kind of electronic equipment can be realized supersonic sensing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220075978A1 (en) * | 2019-07-04 | 2022-03-10 | Jiangxi Oumaisi Microelectronics Co., Ltd. | Ultrasonic fingerprint recognition assembly and electronic device |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 215000 1003, room 33, Mei song garden, 99 Bada street, Suzhou Industrial Park, Jiangsu. Applicant after: Li Yangyuan Address before: 230071 Anhui Hefei Shushan District Changjiang West Road 669 CMC talent center collective households Applicant before: Li Yangyuan |
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| CB02 | Change of applicant information | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20230412 Address after: 215000, 11th Floor, Building 22, No. 388 Xinping Street, Industrial Park, Suzhou City, Jiangsu Province Applicant after: MICROARRAY MICROELECTRONICS Corp.,Ltd. Address before: 215000 1003, room 33, Mei song garden, 99 Bada street, Suzhou Industrial Park, Jiangsu. Applicant before: Li Yangyuan |
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| TA01 | Transfer of patent application right |