CN1084968A - Photoelectricity integration density measuring device - Google Patents
Photoelectricity integration density measuring device Download PDFInfo
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- CN1084968A CN1084968A CN 92110395 CN92110395A CN1084968A CN 1084968 A CN1084968 A CN 1084968A CN 92110395 CN92110395 CN 92110395 CN 92110395 A CN92110395 A CN 92110395A CN 1084968 A CN1084968 A CN 1084968A
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- integrated circuit
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- prism
- luminotron
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Abstract
A kind of photoelectricity integration density measuring device belongs to the field of measuring concentration of fluid or density, particularly belongs to the field that utilizes the photoelectron integrated technology to measure the concentration of liquid or gas.This device comprises the sheet prism of monoblock type encapsulation and is mounted on luminotron, light-receiving tube, application-specific integrated circuit and the temperature sensor of prism bottom surface, and prism has two and bottom surface to be mutually certain angle and is coated with the sensitive area of deielectric-coating.That this device has is highly sensitive, accuracy good, good reliability, volume are little, is suitable for producing in batches, easy to use, advantage such as price is low, can be widely used in the relevant department in the national economy.
Description
The invention belongs to the field of measuring concentration of fluid or density, or rather, belong to and utilize the photoelectron integrated technology to measure liquid or the concentration of gas or the field of density.
In chemical industry, oil, light industry, food, medicine, health, environmental protection, geology, metallurgy, agricultural, scientific research and people's lives, often need carry out quantitative detection to the concentration or the density of liquid or gas.Particularly along with the automatic control technology application and development, press for more and adopt highly sensitive, dependable performance, volume is little, cost is low, easy to use apparatus for measuring concentration, carry out this detection.
Existing liquid or gas concentration measuring apparatus are more, with high costs, the awkward detection system of factor that bulky, complex structure, debugging are installed trouble, poor reliability, related to mostly, are unfavorable for promoting the use of.The inventor does not see the measurement mechanism of direct electric signal input and output, direct tracer liquid or gas concentration so far as yet.
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art, a kind of highly sensitive, good reliability, accuracy is good, volume is little, easy to use measurement liquid or the device of gas concentration are provided.
For this reason, apparatus for measuring concentration of the present invention comprises:
A sheet prism, it have two with fluid to be measured or the contacted sensitive area of gas and a bottom surface, an end of two sensitive areas adjoins each other, the other end of two sensitive areas respectively with the two ends of bottom surface in abutting connection with and be mutually certain angle; Suitable film of material on the evaporation all on two sensitive areas;
Be mounted on a luminotron of the appropriate location on the bottom surface, a light-receiving tube, an application-specific integrated circuit, a temperature sensor and a plurality of input and output extension line; The mounting the position and should be able to receive the chief rays that send by luminotron and come through the reflection of two sensitive areas to greatest extent of light-receiving tube; Said light-receiving tube is converted into the optical power change that is produced by the measured medium refraction that receives electric signal and flows to application-specific integrated circuit; Application-specific integrated circuit comprises all related circuits that are used to receive, amplify, handle, control this electric signal; Temperature sensor is used for by application-specific integrated circuit measured value being revised, and the luminous power of said luminotron is implemented control, and it mounts near luminotron;
A shell is used for integrally encapsulating the bottom surface of prism and is mounted on luminotron, light-receiving tube, application-specific integrated circuit and temperature sensor on the bottom surface.
Preferred embodiment according to apparatus for measuring concentration of the present invention:
A. said prism is by Al
2O
3The prism that synthetic diamond spar (sapphire) is made;
The angle that the sensitive area of b. said two adjacency and bottom surface are mutually all is 59 ° 30 ' 20 ";
C. can select the film that is plated to by different materials for use according to different measured mediums;
D. comprise single chip microcomputer and corresponding software thereof in the said application-specific integrated circuit;
E. said temperature sensor is the point-like semiconductor PN.
F. said luminotron is gallium arsenide LED, and the chief ray wavelength that it sends is 0.85 μ m.Light-receiving tube is PIN type photodiode, photoelectric cell or photoelectric tube.
Describe the preferred embodiment of photoelectricity integration density measuring device of the present invention in detail below in conjunction with accompanying drawing.Wherein:
Fig. 1 is the general structure synoptic diagram according to apparatus for measuring concentration preferred embodiment of the present invention;
Fig. 2 is the opticator synoptic diagram of device shown in Figure 1;
Fig. 3 is the circuit part synoptic diagram of device shown in Figure 1;
Fig. 4 is the process chart of making by apparatus for measuring concentration of the present invention.
At first with reference to Fig. 1.Fig. 1 schematically expresses the general structure of liquid of the present invention or gas concentration measuring apparatus.Label wherein has following connotation:
1. substrate (prism)
2. sensitive area;
3. external lead wire;
4. shell;
5.LED pipe (luminotron);
6.PIN pipe (light-receiving tube);
7. temperature sensor;
8. dedicated IC chip (application-specific integrated circuit).
9. bottom surface.
According to the Fresnel in the optics (Fresnell) formula, when infrared light that luminophor sends incides on the interface of prism sensitive area and measured medium and when this interface refraction is returned, the variation of luminous power will be produced, the refractive index of this variation and measured medium is relevant, and promptly concentration or the density with measured medium is relevant.Therefore, measure the variation that reflects the luminous power of returning, also promptly measured the concentration or the density of measured medium.
Optics sheet prism or the gem crystal prism of prism substrate 1 for making through grinding among Fig. 1 is for example by Al
2O
3Synthetic diamond spar (sapphire) is made.Substrate 1 can be made certain geometric configuration according to the light path needs, for example can be made into shape as shown in Figure 2.Substrate 1 mainly comprises two sensitive areas 2 and 2 in abutting connection with symmetry ' and bottom surface 9.Two sensitive areas 2 and 2 ' and bottom surface 9 between angle [alpha] by the concentration range of measured medium, sensitive area 2,2 ' on deposition material and membranogen decision, for example α=59 ° 30 ' 20 ".Substrate is again a sensitive element simultaneously, sensitive area 2 and 2 ' and be the interface that contacts with measured medium, therefore need through optical grinding.Choose reasonable sensitive area 2 and 2 ' on membranogen, make the chief ray (its wavelength for example is 0.85 μ m) that sends by the LED luminotron sensitive area 2 and 2 ' on incident angle (consider the influence of membranogen near the critical angle of total reflection, the critical angle of said total reflection here refers to, when total reflection just in time takes place in light between an outermost skim and measured medium, incident angle on the corresponding interface of light between first tunic and substrate body during incident, rather than the critical angle when referring on the interface of light between inner layer film and substrate body total reflection takes place), to improve the sensitivity of measuring.Select the deielectric-coating that share by the above at different measured mediums, and with selected film evaporation (not shown deielectric-coating among Fig. 1) on the sensitive area of prism.Deielectric-coating not only plays the effect of protection prism sensitive area, and has changed the dynamic range of measuring.Therefore, the prism of same parameter, if the plated film difference, just applicable to different tested objects, help under the situation of the apparatus for measuring concentration of producing same specification in enormous quantities, serving different test conditions and test specification requirement by the operation of the different deielectric-coating of evaporation.
LED pipe 5, PIN pipe 6, application-specific integrated circuit 8 are arranged on the correct position of bottom surface 9 of substrate 1.In LED pipe 5 divergent beams that send, emission angle is that zero that part of light is referred to as main beam.The position of PIN pipe 6 in bottom surface 9 should be able to receive to greatest extent by LED pipe 5 and send and return through sensitive area 2 and 2 ' two secondary reflections the chief ray (referring to Fig. 2) that comes.Light-receiving tube (PIN pipe) 6 receives this chief ray, and the optical power change that receives is converted into the variation of electric signal.Application-specific integrated circuit 8 receives, handles this electric signal, and the electric signal after will handling is delivered to lead-in wire 3 outputs.
The luminous power output of luminotron (LED pipe) 5 and the optical index of measured medium all have close dependence with temperature, so do not have the temperature correction with regard to indeterminacy concentration.On the correct position of the close LED pipe 5 in bottom surface 9 temperature sensor 7 is set for this reason.Sensor 7 for example can be the point-like semiconductor PN.7 pairs of temperature of sensor are taken a sample, and become electric signal to transport to application-specific integrated circuit 8 temperature transition, by the single-chip microcomputer in the application-specific integrated circuit 8 concentration value is revised, and the Output optical power of FEEDBACK CONTROL luminotron are accurate with what guarantee to measure.Because the volume of whole device is very little, thermal capacity is little, therefore can ignore the temperature difference between measurement mechanism and the sample.
The partial circuit block diagram of application-specific integrated circuit 8 is shown in Fig. 3.In the circuit of Fig. 3, be provided with signal light receiving amplification circuit 31, reference light receives and amplifying circuit 32(and LED pipe 5 join), temperature receives and amplifying circuit 32(and sensor 7 join), their output signal is received F/V frequency measurement circuit 38 through V/ F converter 34,35,36 and by commutation circuit 37 respectively; By the conversion of single chip microcomputer and control circuit 39 control its switch 37, the output of F/V frequency measurement circuit (through going between 3) and through the output of D/A change-over circuit 40, reference circuit 42, optical modulation and transtation mission circuit 41 feedback control signal light-receivings and amplifying circuit 31.In addition, in application-specific integrated circuit 8, also be provided with the current stabilization driving circuit, temperature compensation software, signal input, output interface etc. of power input interface, driving LED pipe.Because above-mentioned all these circuit that are integrated in the application-specific integrated circuit 8 all are that those skilled in the art is known, and needn't describe in detail them here.Adopt known integrated circuit technique, above-mentioned all circuit parts are integrated in one are fit to carry out on the individual chips of " mounted on surface ", make an application-specific integrated circuit 8 that integrated level is higher.
Fig. 4 represents to make the process chart of liquid of the present invention or gas concentration measuring apparatus.As shown in Figure 4, first step processing prism substrate 1 and application-specific integrated circuit 8; In second step, give the sensitive area plated film of substrate 1, and mount LED pipe 5, PIN pipe 6, application-specific integrated circuit 8, temperature sensor 7 in the bottom surface of substrate 1, the 3rd step, lead-in wire 3 is installed, and the bottom of substrate 1 and the component packages that mounts in shell 4, the top of shell 4 expose the sensitive area 2 and 2 of substrate 1 '.
Have following advantage by the above apparatus for measuring concentration of the present invention of making:
1. utilize optical signal to measure the concentration of liquid or gas, therefore measure highly sensitive;
2. directly signal of telecommunication input, output, and have temperature compensation function, the accuracy of therefore measuring is good;
3. the circuit such as detection, amplification, processing, control are integrated on the chip, overall package only leaves several lead-out wires, so functional reliability is strong, and has reduced widely the body of apparatus for measuring concentration Long-pending;
4. change the film of different materials, can be suitable for different occasions, the different measurement of concetration that requires, therefore be suitable for producing in enormous quantities.
5. compare with the existing apparatus for measuring concentration of congenerous, cheap, be convenient in each application, popularize.
6. easy to use, what expose only has several lead-out wires.
Claims (7)
1, a kind of photoelectricity integration density measuring device is characterized in that it comprises:
A sheet prism, it have two with fluid to be measured or the contacted sensitive area of gas and a bottom surface, an end of said two sensitive areas adjoins each other, the other end of said two sensitive areas respectively with the two ends of said bottom surface in abutting connection with and be mutually certain angle; Suitable film of material on the evaporation all on said two sensitive areas;
Be mounted on a luminotron of the appropriate location on the said bottom surface, a light-receiving tube, an application-specific integrated circuit, a temperature sensor and a plurality of input, output lead; The mounting the position and should be able to receive the chief rays that send by luminotron and come through the reflection of two sensitive areas to greatest extent of said light-receiving tube; Said light-receiving tube is converted into the optical power change that is produced by the measured medium refraction that receives electric signal and flows to application-specific integrated circuit; Said application-specific integrated circuit comprises all related circuits that are used to receive, amplify, handle, control said electric signal; Said temperature sensor is used for by said application-specific integrated circuit measured value being revised, and it mounts near said luminotron;
A shell is used for integrally encapsulating the bottom surface of said prism and is mounted on luminotron, light-receiving tube, application-specific integrated circuit and temperature sensor on the said bottom surface.
2, a kind of apparatus for measuring concentration as claimed in claim 1 is characterized in that wherein said prism is by Al
2O
3The prism that synthetic diamond spar (sapphire) is made.
3, a kind of apparatus for measuring concentration as claimed in claim 1 is characterized in that the sensitive area of wherein said two adjacency and the angle that the bottom surface is mutually all are 50 ° 30 ' 20 ".
4, a kind of apparatus for measuring concentration as claimed in claim 1 is characterized in that and can select the film that is plated to by different materials for use according to different measured mediums.
5, a kind of as claim 1,2,3 or 4 described apparatus for measuring concentration, it is characterized in that comprising in the wherein said application-specific integrated circuit single chip microcomputer and corresponding software thereof.
6, a kind of as claim 1,2,3 or 4 described apparatus for measuring concentration, it is characterized in that wherein said temperature sensor is the point-like semiconductor PN.
7, a kind of as claim 1,2,3 or 4 described apparatus for measuring concentration, the said therein luminotron of its feature is PIN type photodiode, photoelectric cell or photoelectric tube, and the chief ray wavelength that it sends is 0.85 μ m.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 92110395 CN1084968A (en) | 1992-09-12 | 1992-09-12 | Photoelectricity integration density measuring device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 92110395 CN1084968A (en) | 1992-09-12 | 1992-09-12 | Photoelectricity integration density measuring device |
Publications (1)
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CN1084968A true CN1084968A (en) | 1994-04-06 |
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CN 92110395 Pending CN1084968A (en) | 1992-09-12 | 1992-09-12 | Photoelectricity integration density measuring device |
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CN (1) | CN1084968A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102803910A (en) * | 2009-06-26 | 2012-11-28 | 施拉德尔电子学有限公司 | Liquid level and quality sensing apparatus, systems and methods using emf wave propagation |
CN105180996A (en) * | 2015-08-04 | 2015-12-23 | 宁波摩米创新工场电子科技有限公司 | Digitization photoelectrical detection system |
CN106769730A (en) * | 2016-12-30 | 2017-05-31 | 林雅露 | The autonomous modification method of laser diode power |
CN107532992A (en) * | 2015-04-24 | 2018-01-02 | 株式会社岛津制作所 | Optical detecting device |
-
1992
- 1992-09-12 CN CN 92110395 patent/CN1084968A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102803910A (en) * | 2009-06-26 | 2012-11-28 | 施拉德尔电子学有限公司 | Liquid level and quality sensing apparatus, systems and methods using emf wave propagation |
CN107532992A (en) * | 2015-04-24 | 2018-01-02 | 株式会社岛津制作所 | Optical detecting device |
CN105180996A (en) * | 2015-08-04 | 2015-12-23 | 宁波摩米创新工场电子科技有限公司 | Digitization photoelectrical detection system |
CN106769730A (en) * | 2016-12-30 | 2017-05-31 | 林雅露 | The autonomous modification method of laser diode power |
CN106769730B (en) * | 2016-12-30 | 2019-08-23 | 林雅露 | The autonomous modification method of laser diode power |
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