CN108493626A - A kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies - Google Patents
A kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies Download PDFInfo
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- CN108493626A CN108493626A CN201810211744.6A CN201810211744A CN108493626A CN 108493626 A CN108493626 A CN 108493626A CN 201810211744 A CN201810211744 A CN 201810211744A CN 108493626 A CN108493626 A CN 108493626A
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- printed circuit
- circuit board
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
- H01Q21/065—Patch antenna array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
- H01Q1/523—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas between antennas of an array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0006—Particular feeding systems
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- Variable-Direction Aerials And Aerial Arrays (AREA)
- Waveguide Aerials (AREA)
Abstract
The present invention relates to a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies,Including six-layer printed circuit board and metal mainstay (6),Print rectangle parasitic patch (1) in top layer printed circuit board (17) lower surface,Print the main patch of rectangle (2) and main patch layer reflecting plate (11) in third layer printed circuit board (16) upper surface,Print vertical polarization feeder line (3) and annulus (8) in 4th layer printed circuit board (15) upper surface,Print earth plate (4) in layer 5 printed circuit board (14) upper surface,Cross gap (9) is etched on earth plate (4),Round hole (19) and round hole (20),Print horizontal polarization feeder line (5) and strip line (10) in layer 5 printed circuit board (14) lower surface,Printed circuit board (12) lower surface is provided with antenna bottom reflecting plate (13).The present invention has broader bandwidth, higher interport isolation, more low-cross polarization level.
Description
Technical field
The present invention relates to a kind of microstrip antenna array, especially a kind of four unit double polarized micro strip antennas based on SIC technologies
Battle array, belongs to antenna technical field.
Background technology
With the extensive use of wireless communication and radar detection, modern antennas needs to meet high capacity communication, transceiver
The features such as changing and require, broadband, dual polarization can be realized this requires antenna.Microstrip antenna has small, light-weight, easily conformal
The advantages that, and some frequency band Widening Techniques are used, as aperture-coupled, U-lag patch, high dielectric constant patch can
To meet the bandwidth demand of different application, so designing dual polarized antenna on the basis of microstrip antenna becomes Antenna Design
One main trend.Microstrip antenna realizes that dual-polarized method has:Array combination dual polarization passes through the single polarization group of two polarization orthogonals
It closes, realizes the dual polarization function of array, this structural volume is big, of high cost, so using being restricted;Unit dual polarization is led to
The special construction design to antenna element is crossed, realizes the function of polarization of both direction, this knot simultaneously on same antenna unit
Structure is small, light weight and cost is low, thus receives the extensive concern of antenna scholar.But unit dual polarization also will produce simultaneously
It is interfered with each other between port, both isolation and polarization problem.
Invention content
For the above-mentioned prior art, technical problem to be solved by the invention is to provide one kind with broader bandwidth, more
The four unit Dual-polarized Micro Strip Arrays based on SIC technologies of high interport isolation, lower cross polarization level.
In order to solve the above technical problems, a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies of the present invention, packet
It includes:About the six layers printed circuit boards arranged and 64 metal mainstays 6, the lower surface of top layer printed circuit board 17 are printed with
Four identical rectangle parasitic patch 1, there are four main 2 Hes of patch of identical rectangle for the printing of 16 upper surface of third layer printed circuit board
Main patch layer reflecting plate 11,15 upper surface of the 4th layer printed circuit board are printed with vertical polarization feeder line 3 and annulus 8, layer 5 print
Earth plate 4 is printed in 14 upper surface of printed circuit board, and there are four 9,64, cross gap metal mainstay circles for etching on earth plate 4
Shape trepanning 19 and a vertical transition structure round hole 20,14 lower surface of layer 5 printed circuit board are printed with horizontal polarization feedback
Line 5 and strip line 10, strip line 10 are connected by metallic vias 7 with the annulus 8 of vertical polarization feeder line 3, base printed circuit
12 lower surface of plate is provided with antenna bottom reflecting plate 13, and every 16 metal mainstays 6 are equally spacedly arranged in the main patch of rectangle 2 four
In week, 64 metal mainstays 6 pass through corresponding metal mainstay round hole 19, and the both ends of metal mainstay are separately connected main patch
Lamella reflecting plate 11 and antenna bottom reflecting plate 13 and collectively form substrate integrate back cavity structure.
A kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies of the present invention further include:
1. the second layer printed circuit board 18 and printed circuit board 12 are froth bed, top layer printed circuit board 17, third
Layer printed circuit board 16, the 4th layer printed circuit board 15 and layer 5 printed circuit board 14 are medium substrate.
2. the main patch 2 of rectangle and rectangle parasitic patch 1 are square, the square arrangement of the main patch 2 of 4 rectangles and same
It is divided into 0.87 times of medium substrate medium wavelength between two main patches of rectangle on one side.
3. each rectangle parasitic patch 1 is respectively positioned on the surface of the main patch of corresponding rectangle 2 and the length of side is all higher than rectangle master
The length of side of patch 2.
4. the main patch 2 of rectangle parasitic patch 1, rectangle, cross gap 9 center vertically aligned.
5. the Dual-polarized Micro Strip Array based on SIC technologies is inverted feeding technique using constant amplitude reverse phase.
6. the radius of metal mainstay 6 is 0.5mm, spacing 2.6mm between metal mainstay.
Advantageous effect of the present invention:Compared to general double polarized micro strip antenna, which has broader bandwidth, higher
Interport isolation, lower cross polarization level can preferably be applied to the fields such as radar detection, satellite communication.The antenna has
Have the advantages that section is low, small, at low cost.Integrated back of the body chamber (Substrate Integrate Cavity, the SIC) technology of substrate
As a kind of deriving technology of substrate integration wave-guide (Substrate Integrate Waveguide, SIW) technology, except having
Guided wave structure filter with low insertion loss, low-loss, outside efficient characteristic, which can also be conveniently integrated in printed circuit, main
It acts on and is to reduce backward radiation, while increasing the bandwidth of antenna.The antenna is designed based on microstrip antenna, antenna
Integrate feed, radiation, it is simple in structure, produced using printed circuit technology, have section is low, light-weight, precision is high,
The advantages that at low cost;The antenna increases antenna capacitive using SIC technologies, parasitic patch technology, slot-coupled technology, reduces antenna
Q values are to improve Antenna Operation bandwidth;The antenna constitutes the integrated back of the body of substrate using SIC technologies using 64 metal mainstays
Cavity configuration reduces antenna backward radiation, while reducing the influence that feeder line radiation is intercoupled and reduced between feeder line to array,
Improving interport isolation reduces cross polarization;The antenna is inverted feeding technique using reverse phase, makes cross polar component between a period of time
It cancels out each other, reduces aerial array cross polarization level.
Description of the drawings
Fig. 1 is the four unit Dual-polarized Micro Strip Array array vertical views the present invention is based on SIC technologies;
Fig. 2 is the four unit Dual-polarized Micro Strip Array array side views the present invention is based on SIC technologies;
Fig. 3 is that the present invention is based on four unit Dual-polarized Micro Strip Array parasitic patch vertical views of SIC technologies;
Fig. 4 is that the present invention is based on the four main patches 2 of unit Dual-polarized Micro Strip Array rectangle of SIC technologies and main patch layer are anti-
Penetrate 11 vertical view of plate;
Fig. 5 is that the present invention is based on four unit Dual-polarized Micro Strip Array vertical polarization feeder lines, 3 structure of SIC technologies vertical views
Figure;
Fig. 6 is that the present invention is based on aperture-coupled 9 structures of cross gap of four unit Dual-polarized Micro Strip Arrays of SIC technologies to bow
View;
Fig. 7 is that the present invention is based on four unit Dual-polarized Micro Strip Array horizontal polarization feeder lines, 5 structure of SIC technologies vertical views
Figure;
Fig. 8 is that the present invention is based on the integrated back of the body 64 gold of chamber of four unit Dual-polarized Micro Strip Array substrates of SIC technologies
Belong to corbeling figure;
Fig. 9 is that the present invention is based on four unit Dual-polarized Micro Strip Array standing-wave ratios of SIC technologies and four line feed network phases
The relational graph of potential difference and frequency;
Figure 10 is that the present invention is based on four unit Dual-polarized Micro Strip Array horizontal polarizations of SIC technologies and vertical polarization impedances
The relational graph of bandwidth and frequency;
Figure 11 (a) is the four unit Dual-polarized Micro Strip Array horizontal polarizations based on SIC technologies, the faces E, H side gains and end
Relational graph of the mouth isolation with pitch angle;
Figure 11 (b) is the four unit Dual-polarized Micro Strip Array vertical polarizations based on SIC technologies, the faces E, H side gains and end
Relational graph of the mouth isolation with pitch angle;
Figure 11 (c) be without using SIC technologies four unit Dual-polarized Micro Strip Array horizontal polarizations, the faces E, H side gains and
Relational graph of the interport isolation with pitch angle;
Figure 11 (d) be without using SIC technologies four unit Dual-polarized Micro Strip Array vertical polarizations, the faces E, H side gains and
Relational graph of the interport isolation with pitch angle;
Figure 12 be the present invention is based on four unit Dual-polarized Micro Strip Arrays of SIC technologies whether there is or not SIC structure levels polarization and
The relational graph of vertical polarization isolation and frequency.
Specific implementation mode
Invention is further described in detail with reference to the accompanying drawings and examples.
The present embodiment provides a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies, centre frequency 9.6GHz,
Its structure is as shown in Figure 1 to Figure 2, includes mainly:
As shown in figure 3, medium substrate 17, which uses dielectric constant for 2.2 Rogers 5880, and thickness is
1.016mm, the printing of 17 bottom of medium are 0.87 times of 5880 wavelength of Rogers there are four spacing, i.e. the square of 18.5mm is parasitic
Patch 1.
Medium substrate 18, the substrate use dielectric constant for 1.07 Rohacell HF51 foams, thickness 3mm.
As shown in figure 4, medium substrate 16, which uses dielectric constant for 2.2 Rogers 5880, and thickness is
1.016mm, it is 0.87 times of 5880 medium wavelength of Rogers that 16 top layer of medium, which is printed with main patch layer reflecting plate 11 and 4 spacing,
That is the square main patch 2 of 18.5mm.
As shown in figure 5, medium substrate 15, which uses dielectric constant for 2.2 Rogers 5880, and thickness is
0.508mm, 15 top layer of medium are printed with vertical polarization feeder line 3.
As shown in Fig. 6, Fig. 7 and Fig. 8, medium substrate 14, the substrate uses dielectric constant for 2.2 Rogers 5880, thickness
Degree is 0.508mm, and 14 top layer of medium is printed with the earth plate 4 with cross gap 9, and bottom prints horizontal polarization feeder line 5, partly
Diameter is that 64 metal mainstays 6 of 0.5mm pass through 64 metal mainstay round holes 19 of earth plate 4, with main patch
Layer reflecting plate 11, antenna bottom reflecting plate 13 constitute the integrated back of the body chamber of substrate of inner antenna;Radius is the metallic vias 7 of 0.2mm
Across medium substrate 14 and medium substrate 15, both ends be connected respectively with the annulus 8 of strip line 10, vertical polarization feeder line constitute it is vertical
Transition structure.
Medium substrate 12, the substrate use dielectric constant for 1.07 Rohacell HF51 foams, thickness 2.5mm, are situated between
12 bottom of matter is printed with antenna bottom reflecting plate 13.
As shown in Fig. 9, Figure 10, Figure 11 (a), Figure 11 (b), Figure 11 (c), Figure 11 (d) and Figure 12, embodiment of the present invention carries
The micro-strip array antenna of confession can realize vertical polarization port Impedance bandwidth in the size of long 30mm wide 30mm thickness 8.548mm
28.51% (8.27-11.02GHz) and horizontal polarization port Impedance bandwidth 31.76% (8.05-11.09GHz), bandwidth range
Interior isolation is better than 42dB, and horizontal cross polarization and square crossing polarization are respectively lower than the performance of -48dB and -35dB.
Embodiment of the present invention further includes:
As shown in Figures 1 to 8, a kind of 4 unit Dual-polarized Micro Strip Arrays based on SIC technologies, the antenna array is using micro-
Band antenna technology obtains low section, characteristic of low cost, increases the beamwidth of antenna using parasitic patch technology, using slot-coupled technology
Increase the beamwidth of antenna and realize dual polarization, being inverted feeding technique using reverse phase reduces cross polarization level, which includes six layers
Printed circuit board and 64 integrated metal pillars.
Six-layer printed circuit board it is characterized in that medium 12,18 be Rohacell HF51 foams, medium 14,15,16,17
For 5880 dielectric-slabs of Rogers, 17 bottom of medium is printed with rectangle parasitic patch 1,16 top layer of medium is printed with the main patch of rectangle 2
With main patch layer reflecting plate 11,15 top layer of medium is printed with vertical polarization feeder line 3, and 14 top layer of medium is printed with earth plate 4, ground connection
There are four 19, the vertical transition structure circles in cross gap 9 and 64 metal mainstay round holes for etching on plate 4
Trepanning 20,14 bottom of medium are printed with horizontal polarization feeder line 5 and strip line 10, and strip line 10 passes through metallic vias 7 and vertical pole
Change feeder line 3 be connected, antenna bottom reflecting plate 13 is placed on 12 bottom of dielectric-slab, 64 metal mainstays it is characterized in that
16 metal mainstays are evenly spaced arranged in 2.6mm by main 2 surrounding of patch of rectangle, with main patch layer reflecting plate 11, day
Line bottom reflecting plate 13 constitutes substrate and integrates back cavity structure.
Rectangle parasitic patch 1 is located at main 2 surface of patch of rectangle, and the length of side is slightly larger than the main patch 2 of rectangle, and range exists
0.1mm is between 2mm.
Rectangle parasitic patch 1 and the main patch of rectangle 2 are encouraged by the cross gap 9 immediately below it.
15 upper surface of dielectric-slab and 14 lower surface of dielectric-slab are furnished with mutually orthogonal vertical polarization feeder line 3 and horizontal pole respectively
Change feeder line 5.
Vertical polarization feeder line 3 and horizontal polarization feeder line 5 are by the T shape power splitters of 50 Ω to 100 Ω, two 100 Ω
To the more piece impedance transformer of 25 Ω, two 25 Ω to the T shapes power splitter of 50 Ω and four L-shaped feeder lines are constituted.
Vertical polarization feeder line 3 and horizontal polarization feeder line 5 have similar U-shaped structure.
64 metal mainstays 6 are evenly arranged in the main patch of rectangle 2 it is characterized in that 16 metal mainstays are one group
Surrounding, integrated metal pillar both ends connect main patch layer reflecting plate 11 and antenna bottom reflecting plate 13, the integrated back of the body of composition substrate
Cavity configuration.
Inner antenna radius be 0.2mm metallic vias 7, pass through dielectric-slab 14 and dielectric-slab 15, both ends respectively with it is band-like
The connected composition vertical transition structure of annulus 8 of line 10, vertical polarization feeder line 3, reduces backward radiation.
Cross coupling gap 9 is etched on earth plate 4, and due to distance difference cross-formed slits of the feeder line away from radiation patch
9 brachium of gap slightly has difference.
The distance difference of the vertical polarization feeder line 3 and horizontal polarization feeder line 5 away from radiation patch leads to two feeder line sizes
It is slightly different
Embodiment of the present invention further includes:
As shown in Figures 1 to 8, a kind of broadband high-isolation low-cross polarization double polarized micro strip antenna based on SIC technologies
Battle array, including six-layer printed circuit board and 64 metal mainstays, six-layer printed circuit board is it is characterized in that medium 12,18 is
RohacellHF51 foams, medium 14,15,16,17 are 5880 dielectric-slabs of Rogers, and 17 bottom of medium is to be printed with rectangle to post
Raw patch 1,16 top layer of medium are printed with the main patch 2 of rectangle and main patch layer reflecting plate 11, and 15 top layer of medium is printed with vertical pole
Change feeder line 3,14 top layer of medium prints earth plate 4, and there are four cross gap 9 and 64 gold for etching on earth plate 4
Belong to pillar 19, vertical transition structure round holes 20 of round hole, 14 bottom of medium be printed with horizontal polarization feeder line 5 and
Strip line 10, strip line 10 are connected by metallic vias 7 with vertical polarization feeder line 3, and antenna bottom reflecting plate 13 is placed on medium
12 bottom of plate, 64 metal mainstays are it is characterized in that 16 metal mainstays are evenly spaced arranged in 2.6mm
By main 2 surrounding of patch of rectangle, constitutes substrate with main patch layer reflecting plate 11, antenna bottom reflecting plate 13 and integrate back cavity structure.
It is divided into 0.87 times of medium wavelength, i.e. 18.5mm between the main patch of rectangle 2.
Micro-strip antenna array is inverted feeding technique using constant amplitude reverse phase, and both distributing point was mirrored into symmetrical, feeder line output phase
The constant-amplitude signal that difference is 180 degree.
Main 2 surrounding of patch of rectangle is surrounded by the integrated back of the body chamber of substrate.
The main patch 2 of rectangle parasitic patch 1, rectangle, cross gap 9 center vertically aligned.
Vertical polarization feeder line 3 is respectively printed at the both sides of earth plate 4 with horizontal polarization feeder line 5.
The radius for surrounding the metal mainstay 6 of the integrated back of the body chamber of substrate of antenna radiation unit is 0.5mm, spacing 2.6mm.
The invention discloses a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies, the antenna array use micro-strip
The technologies such as antenna technology, SIC technologies, parasitic patch technology, slot-coupled technology, reversed inversion feeding technique, realize micro-strip
The excellent properties such as wide bandwidth, high-isolation, low-cross polarization, the radiation of low feed of antenna.The antenna is with cross slot-coupled
Based on microstrip antenna, increasing the capacitive of antenna using multilayered structure reduces antenna Q values to expand bandwidth.In each array element
Surrounding is uniformly embedded into ten six roots of sensation metal mainstays, forms the integrated back of the body chamber of substrate and reduces backward radiation.Reflecting plate inside array is by two
Layer feeding network keeps apart and inhibits the electromagnetic radiation of feeding microstrip line to improve isolation between antennas and reduce cross polarization.
The antenna realizes the planarization and miniaturization of double polarized antenna, and can realize the integrated of antenna and circuit.It should
Invention belongs to micro-strip paster antenna, can be used for satellite communication, radar fix, and all various aspects such as synthetic aperture radar use.
Claims (7)
1. a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies, it is characterised in that:The print arranged including about six layers
Printed circuit board and 64 metal mainstays (6), there are four identical rectangles for the lower surface printing of top layer printed circuit board (17)
Parasitic patch (1), there are four the main patch of identical rectangle (2) and main patch layers for the printing of third layer printed circuit board (16) upper surface
Reflecting plate (11), the 4th layer printed circuit board (15) upper surface are printed with vertical polarization feeder line (3) and annulus (8), layer 5 print
Earth plate (4) is printed in printed circuit board (14) upper surface, and there are four cross gap (9), 64 gold for etching on earth plate (4)
Belong to pillar round hole (19) and a vertical transition structure round hole (20), layer 5 printed circuit board (14) lower surface print
It is formed with horizontal polarization feeder line (5) and strip line (10), strip line (10) passes through metallic vias (7) and vertical polarization feeder line (3)
Annulus (8) be connected, printed circuit board (12) lower surface is provided with antenna bottom reflecting plate (13), every 16 metal branch
Column (6) is equally spacedly arranged in the main patch of rectangle (2) surrounding, and 64 metal mainstays 6 pass through corresponding metal mainstay round
Trepanning (19), and the both ends of metal mainstay are separately connected main patch layer reflecting plate (11) and antenna bottom reflecting plate (13) and common
It constitutes substrate and integrates back cavity structure.
2. a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies according to claim 1, it is characterised in that:
Second layer printed circuit board (18) and printed circuit board (12) are froth bed, top layer printed circuit board (17), third layer print
Printed circuit board (16), the 4th layer printed circuit board (15) and layer 5 printed circuit board (14) are medium substrate.
3. a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies according to claim 1 or 2, feature exist
In:The main patch of rectangle (2) and rectangle parasitic patch (1) are square, the square arrangement of four main patches of rectangle (2) and same
It is divided into 0.87 times of medium substrate medium wavelength between two main patches of rectangle on one side.
4. a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies according to claim 3, it is characterised in that:
Each rectangle parasitic patch (1) is respectively positioned on the surface of the corresponding main patch of rectangle (2) and the length of side is all higher than the main patch of rectangle (2)
The length of side.
5. a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies according to claim 4, it is characterised in that:
Rectangle parasitic patch (1), the main patch of rectangle (2), cross gap (9) center vertically aligned.
6. a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies according to claim 1 or 2, feature exist
In:Dual-polarized Micro Strip Array based on SIC technologies is inverted feeding technique using constant amplitude reverse phase.
7. a kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies according to claim 1, it is characterised in that:
The radius of the metal mainstay (6) is 0.5mm, spacing 2.6mm between metal mainstay.
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