CN106329106B - A kind of broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology - Google Patents
A kind of broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology Download PDFInfo
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- CN106329106B CN106329106B CN201610895326.4A CN201610895326A CN106329106B CN 106329106 B CN106329106 B CN 106329106B CN 201610895326 A CN201610895326 A CN 201610895326A CN 106329106 B CN106329106 B CN 106329106B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/08—Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/24—Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction
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- Waveguide Aerials (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention belongs to antenna technical fields, and in particular to one kind can be used for satellite communication, radar fix, and all various aspects such as synthetic aperture radar are come the broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology that uses.A kind of broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology, including 5 layer printed circuit boards and 54 integrated metal pillars, in 5 layer printed circuit board, the medium 20 of the medium of first layer printed circuit board and the second layer printed circuit board is Rohacell HF51 foam, and the medium of the medium of third layer printed circuit board, the medium of the 4th layer printed circuit board and layer 5 printed circuit board is 5880 dielectric-slab of Rogers.The antenna is designed based on microstrip antenna, and antenna set feed, radiation are integrated, and structure is simple, is produced using printed circuit technology, has many advantages, such as that section is low, light-weight, precision is high, at low cost.
Description
Technical field
The invention belongs to antenna technical fields, and in particular to one kind can be used for satellite communication, radar fix, synthetic aperture thunder
Up to etc. all various aspects come the broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology that uses.
Background technique
With the extensive use of wireless communication and radar detection, modern antennas needs to meet high capacity communication, transceiver
The features such as changing and require, can be realized broadband, dual polarization this requires antenna.Microstrip antenna has small in size, light-weight, easily conformal
The advantages that, and some frequency band Widening Techniques are used, as aperture-coupled, U-lag patch, high dielectric constant patch can
To meet the bandwidth demand of different application, so designing dual polarized antenna on the basis of microstrip antenna becomes Antenna Design
One main trend.Microstrip antenna realizes that dual-polarized method has: array combination dual polarization passes through the single polarization group of two polarization orthogonals
It closes, realizes the dual polarization function of array, this structural volume is big, at high cost, so using being restricted；Unit dual polarization is led to
The special construction design to antenna element is crossed, realizes the function of polarization of both direction, this knot simultaneously on same antenna unit
Structure is small in size, light weight and cost is low, thus receives the extensive concern of antenna scholar.But unit dual polarization can also generate simultaneously
It is interfered with each other between port, both isolation and polarization problem.
Substrate integration wave-guide (Substrate Integrate Waveguide, SIW) technology is the one kind proposed in recent years
It can integrate new guided wave structure with the characteristics such as filter with low insertion loss, Low emissivity, high power capacity in dielectric substrate, it can be with
It is conveniently integrated in printed circuit, with special function.SIW technology equally plays important work in field of antenna
With it can be used to make the low slot antenna of light weight and cost, and the back chamber that can also be used to production antenna reduces backwards to spoke
It penetrates, the bandwidth etc. of antenna can also be increased.
Summary of the invention
The purpose of the present invention is to provide a kind of broadband high-isolation low-cross polarization dual-polarized, microstrip based on SIW technology
Antenna array.
The object of the present invention is achieved like this:
A kind of broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology, including 5 layers of printing electricity
Road plate and 54 integrated metal pillars, in 5 layer printed circuit board, the medium 16 and the second layer of the first layer printed circuit board print
The medium 20 of printed circuit board is Rohacell HF51 foam, medium 17, the 4th layer printed circuit board of third layer printed circuit board
Medium 18 and layer 5 printed circuit board medium 19 be 5880 dielectric-slab of Rogers, the medium of the first layer printed circuit board
Top layer is to be printed with square parasitic patch 1 and the medium top layer of reflecting plate I2, third layer printed circuit board are printed with square
Main patch 3 and reflecting plate II4,18 top layer of medium of the 4th layer printed circuit board are printed with vertical polarization feeder line 5, layer 5 printing
19 top layer of medium of circuit board is printed with the earth plate 6 with cross gap 7,20 top layer of medium of the second layer printed circuit board
It is printed with horizontal polarization feeder line 8,20 bottom of medium of the second layer printed circuit board is printed with reflecting plate III9, and described 54 integrated
Metal mainstay is it is characterized in that the integrated metal pillar 14 of periphery 24 connects reflecting plate I2 and reflecting plate III9 forming array surrounding
Substrate integration wave-guide, internal 30 integrated metal pillars 11 connect the substrate inside reflecting plate II4 and 6 forming array of earth plate
Integrated waveguide.
0.75 λ is divided between described a period of time.
The array is inverted feeding technique using constant amplitude reverse phase, and both feeding point was mirrored into symmetrical, feeder line phase difference output
For the constant-amplitude signal of 180 degree.
It is surrounded around the antenna by substrate integration wave-guide.
The antenna upper vertical polarization feeding network is covered by substrate integration wave-guide.
The parasitic patch 1, main patch 3, cross gap 7 are aligned in center.
The vertical polarization feeder line 5 and horizontal polarization feeder line 8 is respectively printed at the two sides of earth plate 6.
The radius of the antenna periphery substrate integrated metal pillar 14 is 1mm, is spaced 4.2mm, inner antenna substrate collection
Radius at metal mainstay 11 is 0.4mm, is spaced 1.4mm.
The beneficial effects of the present invention are:
(1) antenna is designed based on microstrip antenna, and antenna set feed, radiation are integrated, and structure is simple, is utilized
Printed circuit technology is produced, and has many advantages, such as that section is low, light-weight, precision is high, at low cost.
(2) antenna increases antenna capacitive, reduction antenna Q using SIW technology, parasitic patch technology, slot-coupled technology
Value is to improve Antenna Operation bandwidth.
(3) antenna blocks feeder line radiation using SIW technology not only reduce feeder line intercouple but also reduce
Feeder line radiates the influence to array, and improving interport isolation reduces cross polarization.
(4) antenna is inverted feeding technique using reverse phase, so that cross polar component between a period of time is cancelled out each other, reduces antenna
Array cross polarization level.
Detailed description of the invention
Fig. 1 is the broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array provided by the invention based on SIW technology
Structure expanded schematic diagram.
Fig. 2 is the broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array provided by the invention based on SIW technology
Array top view.
Fig. 3 is a kind of broadband high-isolation low-cross polarization dual-polarized, microstrip day based on SIW technology provided by the invention
Linear array array side view.
Fig. 4 is the broadband high-isolation low-cross polarization dual-polarized, microstrip provided in an embodiment of the present invention based on SIW technology
The relational graph of antenna array return loss and frequency.
Fig. 5 is a kind of broadband high-isolation low-cross polarization dual polarization based on SIW technology provided in an embodiment of the present invention
The relational graph of microstrip antenna array isolation and frequency.
Fig. 6 a is a kind of broadband high-isolation low-cross polarization dual polarization based on SIW technology provided in an embodiment of the present invention
The face the E horizontal polarization directions figure of microstrip antenna array surface radiation directional diagram；
Fig. 6 b is a kind of broadband high-isolation low-cross polarization dual polarization based on SIW technology provided in an embodiment of the present invention
The face the E water vertical polarization directions figure of microstrip antenna array surface radiation directional diagram.
Specific embodiment
The present invention is described further with reference to the accompanying drawing.
The invention discloses a kind of 4 unit Dual-polarized Micro Strip Arrays based on SIW technology, the antenna array use micro-strip day
Line technology, SIW technology, parasitic patch technology, slot-coupled technology, reverse phase are inverted the technologies such as feeding technique, realize micro-strip day
The excellent properties such as wide bandwidth, high-isolation, the low-cross polarization of line.The antenna is using cross gap coupled microstrip antenna as base
Plinth is respectively embedded into 24 and 30 metal mainstays in array surrounding and inside, forms two substrate integration wave-guides.Array surrounding
The capacitive that substrate integration wave-guide increases antenna reduces antenna Q value to increase bandwidth, and the substrate integration wave-guide inside array will
Two layers of feeding network keeps apart and inhibits the electromagnetic radiation of feeding microstrip line to improve isolation between antennas and reduce cross-pole
Change.The antenna realizes the planarization and miniaturization of double polarized antenna, and can be realized the integrated of antenna and circuit.
Compared to general double polarized micro strip antenna, which has broader bandwidth, higher interport isolation, lower
Cross polarization level, can preferably be applied to the fields such as radar detection, satellite communication.The antenna have section it is low, it is small in size,
The advantages that at low cost.
A kind of 4 unit Dual-polarized Micro Strip Arrays based on SIW technology, the antenna array are obtained low using microstrip antenna technology
Section, characteristic of low cost, increase the beamwidth of antenna using parasitic patch technology, increase the beamwidth of antenna and real using slot-coupled technology
Existing dual polarization, being inverted feeding technique using reverse phase reduces cross polarization level, which includes 5 layer printed circuit boards and 54 collection
At metal mainstay.
5 layer printed circuit board is it is characterized in that medium 16,20 is Rohacell HF51 foam, medium 17,18,19
For 5880 dielectric-slab of Rogers, 16 top layer of medium is to be printed with square parasitic patch 1 and reflecting plate I2,17 top layer of medium print
It is formed with the main patch 3 of square and reflecting plate II4,18 top layer of medium is printed with vertical polarization feeder line 5,19 top layer of medium is printed with band
There is the earth plate 6 in cross gap 7,20 top layer of medium is printed with horizontal polarization feeder line 8, and 20 bottom of medium is printed with reflecting plate
III9。
The square parasitic patch 1 is located at right above the main patch 3 of square, and side length is slightly larger than the main patch 3 of square.
The cross that the square parasitic patch 1 and the main patch 3 of square is located at immediately below it couples 7 institute of gap
Excitation.
The cross coupling gap 7 is etched on earth plate 6, and the distance difference ten due to feeder line away from radiation patch
7 brachium of font gap slightly has difference.
6 two sides of earth plate are furnished with mutually orthogonal vertical polarization feeder line 5 and horizontal polarization feeder line 8 respectively.
The vertical polarization feeder line 5 and horizontal polarization feeder line 8 by 50 Ω to 100 Ω T shape power splitter, two
The more piece impedance transformer of 100 Ω to 25 Ω, two 25 Ω to the T shape power splitter of 50 Ω and four L shape feeder lines are constituted.
The vertical polarization feeder line 5 and horizontal polarization feeder line 8 lead to two feeder line sizes away from the distance difference of radiation patch
It is slightly different
54 integrated metal pillars are it is characterized in that the 24 integrated metal pillars 14 in periphery connect reflecting plate I2 and anti-
The substrate integration wave-guide of plate III9 forming array surrounding is penetrated, internal 30 integrated metal pillars 11 connect reflecting plate II4 and floor 6
Substrate integration wave-guide inside forming array.
The radius of peripheral 24 integrated metal pillars 14 is 1mm, is spaced 4.2mm, 6 pillar groups are in a row, both ends
It is connected respectively with reflecting plate I2, reflecting plate III9 and constitutes substrate integration wave-guide, is distributed in the surrounding of antenna array.
The radius of 30 substrate integrated metal pillar 11 of inner antenna be 0.4mm, be spaced 1.4mm, both ends respectively with reflecting plate
II4 is connected with earth plate 6 constitutes substrate integration wave-guide, and vertical polarization feeder line 5 is surrounded.
Embodiment
The present embodiment provides a kind of broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology,
Centre frequency is 13.6GHz, and structure is as shown in Figure 1 to Figure 3, is specifically included that
Medium substrate 16, the substrate use dielectric constant to be situated between for 1.07 Rohacell HF51 foam with a thickness of 2.3mm
16 top layer of matter is to be printed with the square parasitic patch 1 and reflecting plate I2 that 4 spacing are 0.75 λ.
Medium substrate 17, the substrate use dielectric constant for 2.2 Rogers 5880, with a thickness of 0.508mm, medium 17
Top layer is printed with the main patch 3 of square and reflecting plate II4 that 4 spacing are 0.75 λ.
Medium substrate 18, the substrate use dielectric constant for 2.2 Rogers 5880, with a thickness of 0.254mm, medium 18
Top layer is printed with vertical polarization feeder line 5.
Medium substrate 19, the substrate use dielectric constant for 2.2 Rogers 5880, with a thickness of 0.254mm, medium 19
Top layer is printed with the earth plate 6 with cross gap 7, and the integrated metal pillar 11 that radius is 0.4mm passes through via hole 10 and mistake
Hole 12 constitutes the substrate integration wave-guide of inner antenna with earth plate 6, reflecting plate II4.
Medium substrate 20, the substrate use dielectric constant for 1.07 Rohacell HF51 foam, with a thickness of 3mm, medium
20 top layers are printed with horizontal polarization feeder line 8, and 20 bottom of medium is printed with reflecting plate III9, and radius is the integrated metal pillar of 1mm
14 pass through via hole 13 and via hole 15, and the substrate integration wave-guide of antenna periphery is constituted with reflecting plate III9, reflecting plate I2.
As shown in Figure 4, Figure 5 and Figure 6, the micro-strip array antenna that embodiment of the present invention provides can be thick in long 30mm wide 30mm
In the size of 6.2mm, vertical polarization port Impedance bandwidth 23.13% (12.08-15.24GHz) and horizontal polarization port are realized
Impedance bandwidth 29.14% (11.49-15.41GHz), isolation is better than 38dB in bandwidth range, horizontal cross polarization and vertical hands over
Fork polarization is below the micro-strip array antenna of -50dB.
Claims (8)
1. a kind of broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology, including 5 layer printed circuits
Plate and 54 integrated metal pillars, it is characterised in that: in 5 layer printed circuit board, the medium of the first layer printed circuit board
(16) and the medium of the second layer printed circuit board (20) is Rohacell HF51 foam, the medium of third layer printed circuit board
(17), the medium (19) of the medium (18) of the 4th layer printed circuit board and layer 5 printed circuit board is 5880 medium of Rogers
Plate, the medium top layer of the first layer printed circuit board are to be printed with square parasitic patch (1) and reflecting plate I (2), third layer printing
The medium top layer of circuit board is printed with the main patch (3) of square and reflecting plate II (4), the medium (18) of the 4th layer printed circuit board
Top layer is printed with vertical polarization feeder line (5), and medium (19) top layer of layer 5 printed circuit board is printed with cross gap
(7) medium (20) top layer of earth plate (6), the second layer printed circuit board is printed with horizontal polarization feeder line (8), second layer printing
Medium (20) bottom of circuit board is printed with reflecting plate III (9), and 54 integrated metal pillars are it is characterized in that periphery 24
Integrated metal pillar (14) connects the substrate integration wave-guide of reflecting plate I (2) and reflecting plate III (9) forming array surrounding, inside 30
Substrate integration wave-guide inside a integrated metal pillar (11) connection reflecting plate II (4) and earth plate (6) forming array.
2. a kind of broadband high-isolation low-cross polarization dual-polarized, microstrip day based on SIW technology according to claim 1
Linear array, it is characterised in that: 0.75 λ is divided between a period of time of the array.
3. a kind of broadband high-isolation low-cross polarization dual-polarized, microstrip day based on SIW technology according to claim 1
Linear array, it is characterised in that: the array is inverted feeding technique using constant amplitude reverse phase, and both feeding point was mirrored into that symmetrical, feeder line is defeated
Phase difference is the constant-amplitude signal of 180 degree out.
4. a kind of broadband high-isolation low-cross polarization dual-polarized, microstrip day based on SIW technology according to claim 1
Linear array, it is characterised in that: surrounded around the microstrip antenna array by substrate integration wave-guide.
5. a kind of broadband high-isolation low-cross polarization dual-polarized, microstrip day based on SIW technology according to claim 1
Linear array, it is characterised in that: the microstrip antenna array upper layer feeding network is covered by substrate integration wave-guide.
6. a kind of broadband high-isolation low-cross polarization dual-polarized, microstrip day based on SIW technology according to claim 1
Linear array, it is characterised in that: the parasitic patch (1), main patch (3), cross gap (7) are aligned in center.
7. a kind of broadband high-isolation low-cross polarization dual-polarized, microstrip day based on SIW technology according to claim 1
Linear array, it is characterised in that: the vertical polarization feeder line (5) and horizontal polarization feeder line (8) is respectively printed at the two of earth plate (6)
Side.
8. a kind of broadband high-isolation low-cross polarization dual-polarized, microstrip day based on SIW technology according to claim 1
Linear array, it is characterised in that: the radius of the microstrip antenna array periphery substrate integrated metal pillar (14) is 1mm, interval
4.2mm, the radius of microstrip antenna array interior substrate integrated metal pillar (11) are 0.4mm, are spaced 1.4mm.
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| CN201610895326.4A CN106329106B (en) | 2016-10-13 | 2016-10-13 | A kind of broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology |
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| CN201610895326.4A CN106329106B (en) | 2016-10-13 | 2016-10-13 | A kind of broadband high-isolation low-cross polarization Dual-polarized Micro Strip Array based on SIW technology |
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| CN106329106B true CN106329106B (en) | 2019-10-18 |
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| CN108281774B (en) * | 2017-12-06 | 2020-06-26 | 上海大学 | Dual-polarization direction backtracking rectification antenna array |
| KR102342978B1 (en) * | 2018-01-19 | 2021-12-24 | 삼성전자 주식회사 | An antenna module including insulator and a base station including the antenna module |
| CN108493626A (en) * | 2018-03-15 | 2018-09-04 | 哈尔滨工程大学 | A kind of four unit Dual-polarized Micro Strip Arrays based on SIC technologies |
| CN108417971B (en) * | 2018-03-26 | 2024-06-21 | 广东纳睿雷达科技股份有限公司 | Dual polarized antenna array and dual polarized phased array antenna |
| CN108461929B (en) * | 2018-03-28 | 2024-03-15 | 广东纳睿雷达科技股份有限公司 | Dual polarized antenna array and dual polarized phased array antenna |
| US11139588B2 (en) | 2018-04-11 | 2021-10-05 | Apple Inc. | Electronic device antenna arrays mounted against a dielectric layer |
| CN109037930B (en) * | 2018-07-13 | 2020-09-11 | 东南大学 | Broadband array antenna based on laminated microstrip and substrate integrated waveguide feed |
| CN109037932B (en) * | 2018-07-16 | 2021-01-01 | 南通大学 | Broadband multi-patch antenna |
| CN109361053B (en) * | 2018-08-17 | 2019-08-13 | 西安电子科技大学 | Low RCS microstrip antenna based on dual polarization Van Atta array |
| CN109713437A (en) * | 2018-12-05 | 2019-05-03 | 北京遥测技术研究所 | A kind of wide-band high gain circular polarization microstrip antenna |
| CN110265776A (en) * | 2019-05-08 | 2019-09-20 | 成都天锐星通科技有限公司 | A kind of broadband double-circle polarization paster antenna |
| CN110504539B (en) * | 2019-07-25 | 2021-03-16 | 中国电子科技集团公司第二十九研究所 | Millimeter wave dual-polarized planar antenna |
| CN110676576B (en) * | 2019-10-09 | 2022-01-18 | 深圳锐越微技术有限公司 | Dual-polarized microstrip antenna |
| CN111029759A (en) * | 2019-12-05 | 2020-04-17 | 南京理工大学 | SIW parallel feed array antenna with low cross polarization |
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