CN108493275A - A kind of subband structures quantum dot cascade electrooptic detector - Google Patents
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 71
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- 230000012010 growth Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000000737 periodic effect Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 118
- 239000000463 material Substances 0.000 claims description 36
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 15
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 8
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000005036 potential barrier Methods 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims 1
- 230000004043 responsiveness Effects 0.000 abstract description 5
- 230000004044 response Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000007773 growth pattern Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003362 semiconductor superlattice Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
Abstract
The present invention discloses a kind of subband structures quantum dot cascade electrooptic detector, it is characterized in that, including substrate layer, in the upper surface of substrate layer, epitaxial growth goes out lower contact layer, active area layer and upper contact layer successively from the bottom to top, the active area layer is periodic layer structure, includes the Quantum Well cascaded transmission area being arranged from the bottom to top and subband structures quantum dot stack layer in each period.Subband structures quantum dot cascade electrooptic detector of the present invention can obtain quality higher, more controllable quantum dot, improve quantum efficiency, reduce dark current, to effectively improve the detectivity and responsiveness of photodetector.
Description
Technical field
The present invention relates to photodetector technical field more particularly to a kind of subband structures quantum dot cascade electrooptic detectors.
Background technology
In the detection of infrared and far red light research, have in fields such as remote recording, thermal imaging, night vision and space orientations
There is important application.With deepening continuously for semiconductor superlattice and Quantum Well research, it is quantum well infrared obtain it is rapid
Development.However, the limitation due to selecting transition rule, prevents it to only have from direct detection vertical incidence light, and in infrared region
Relatively narrow spectral response.In recent years, with semiconductor-quantum-point physical study increasingly deeply and self-organizing growth technology it is continuous
Progress, a kind of new infrared optical detector using quantum dot as active area, by the extensive pass of more and more researchers
Note.Although quantum dot infrared detector is similar with quantum trap infrared detector in structure type and operation principle, it
Have a many advantages that the latter is incomparable, for example, to vertical incidence photaesthesia, broader spectral response can be reached, have
Longer electron excitation service life, lower dark current, higher photoconductive gain and higher optical detection rate etc..
Now with a kind of quantum dot cascade electrooptic detector based on GaAs, its optic response wave band 5 to 6 μm it
Between, also a kind of quantum dot cascade electrooptic detector in InP substrate, they all can generate response to normal incident light,
In both detectors, quantum dot is epitaxially-formed by Stranski-Krastanov (SK), but is based on this pattern
That there are quantum dot sizes is uneven for the quantum-dot structure of growth, and accurate Energies control has difficulties, and is additionally present of quantum dot
The low problem low with carrier constraint ability of density, limits the detectivity of photodetector.
Invention content
The technical problems to be solved by the invention and the technical assignment of proposition are improved to the prior art, and one kind is provided
Subband structures quantum dot cascade electrooptic detector, the quantum dot size for solving quantum dot cascade electrooptic detector in current technology are uneven
Even, ability is low leads to the problem that the quantum efficiency of photodetector is low, dark current is larger for the quantum dot density low constraint with carrier.
In order to solve the above technical problems, the technical scheme is that：
A kind of subband structures quantum dot cascade electrooptic detector, which is characterized in that including substrate layer, in the upper surface of substrate layer
Epitaxial growth goes out lower contact layer, active area layer and upper contact layer successively from the bottom to top, and the active area layer is periodically
Layer structure includes the Quantum Well cascaded transmission area being arranged from the bottom to top and subband structures quantum dot stack layer in each period.This
The active area layer of the invention subband structures quantum dot cascade electrooptic detector constitutes quanta cascade structure, is set as periodic
Subband structures deposition is to be used to prepare highdensity subband structures quantum dot to improve light absorption, the quanta cascade based on quantum well structure
Photodetector can work under no external bias voltage conditions, can apply including short infrared band, middle infrared waves
The range of section and long infrared band, quantum dot is longer to the capture time of carrier, and the detector based on quantum dot has can be with
The advantages of generating three-dimensional constraining to carrier, this advantage will cause detector to have lower dark current, longer excited state
Service life and to the better sensibility of vertical incidence light.The light that quantum-dot structure is combined with Quantum Well quanta cascade structure
The response to vertical incidence light may be implemented in electric explorer, and subband structures quantum dot possesses very high because of its self-assembling technique
Dot density, and wettable layer is not present, thus it is applied to quanta cascade photodetector using designing and controlling electron energy level, together
The quality of Shi Tigao quantum-dot structures, to improve the detectivity of photodetector.
Further, if the Quantum Well cascaded transmission area includes dried layer quantum well layer.
Further, the energy difference of transition is the energy for indulging optical phonon between the quantum well layer so that several
The energy ladder that vertical optical phonon can be formed between layer Quantum Well, in order to efficiently extract out exciton.
Further, the material that the quantum well layer uses is IIIxⅢ1- xAs, III in group iii elements Al, Ga,
In, 0≤x≤1.
Further, the subband structures quantum dot stack layer includes using base made of GaAs materials and using InAs
Subband structures quantum dot of the Material growth in base, subband structures quantum dot stack layer is for carrying out infrared absorption.
Further, the subband structures quantum dot use N-shaped doping InAs, select InAs subband structures quantum dots be because
Quantum dot to be formed under subband structures quantum dot ratio SK growth patterns possesses better homogeneity and electron energy level controllability, higher
Dot density and the advantages of without wettable layer.
Further, the subband structures quantum dot stack layer is periodic.
Further, the active area layer further include extension within each period in subband structures quantum dot stack layer it
On GaAs barrier layers, on GaAs barrier layers also epitaxial growth have IIIxⅢ1- xAs potential barriers regulate and control electron transition energy level, and III is
Al, Ga, In in group iii elements, 0≤x≤1 further include being located at subband structures quantum dot heap within each period of active area layer
GaAs floor between lamination and Quantum Well cascaded transmission area.
Further, the lower contact layer includes the bottom one, bottom two and bottom three set gradually from the bottom to top, bottom
The GaAs that one material that uses of layer adulterates for N-shaped, the material that bottom two and bottom three use is IIIxⅢ1-xAs, III is three races's member
Al, Ga, In in element, 0≤x≤1.
Further, the upper contact layer includes the top layer one being arranged from the bottom to top and top layer two, what top layer one used
Material is IIIxⅢ1-xAs, III is Al, Ga, In in group iii elements, 0≤x≤1, and the material that top layer two uses adulterates for N-shaped
GaAs, top layer two can reduce tunnel injection of the electronics from quantum dot to contact point.
Compared with prior art, the invention has the advantages that：
Subband structures quantum dot cascade electrooptic detector of the present invention can apply including short infrared band, in it is infrared
The range of wave band and long infrared band can obtain quality higher, more controllable quantum dot, improve quantum efficiency, reduce dark electricity
Stream, to effectively improve the detectivity and responsiveness of photodetector.
Description of the drawings
Fig. 1 is the interlayer structure schematic diagram of subband structures quantum dot cascade electrooptic detector；
Fig. 2 is the structural schematic diagram of subband structures quantum dot stack layer.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
A kind of subband structures quantum dot cascade electrooptic detector disclosed by the embodiments of the present invention, can obtain the higher amount of quality
It is sub-, quantum efficiency is improved, the responsiveness and detectivity of photodetector are improved.
A kind of subband structures quantum dot cascade electrooptic detector, including substrate layer 1, the upper surface of substrate layer 1 from the bottom to top
Epitaxial growth goes out lower contact layer 2, active area layer 3 and upper contact layer 4 successively, and active area layer 3 is periodic layer structure, most
It is provided with a cycle less, includes the Quantum Well cascaded transmission area 31 being arranged from the bottom to top and subband structures quantum dot in each period
Stack layer 32；
If Quantum Well cascaded transmission therein area 31 includes dried layer quantum well layer 311, and transition between quantum well layer 311
Energy difference be vertical optical phonon energy, the material that quantum well layer 311 uses is IIIxⅢ1-xAs, III is in group iii elements
Al, Ga, In, 0≤x≤1；
Subband structures quantum dot stack layer 32 therein includes using base 321 made of GaAs materials and using InAs materials
The subband structures quantum dot 322 being grown in base, InAs carry out N-shaped doping, and thickness is subband structures, and subband structures quantum dot heap
Lamination 32 is periodic；
Lower contact layer 2 includes bottom 1, bottom 2 22 and the bottom 3 23 being epitaxially grown to successively from the bottom to top, bottom
The GaAs that one 21 materials used adulterate for N-shaped, doping density are 1 × 1018cm-3, the material of bottom 2 22 and the use of bottom 3 23
Material is IIIxⅢ1-xAs, III is Al, Ga, In in group iii elements, 0≤x≤1；
Upper contact layer 4 includes the top layer 1 that is arranged from the bottom to top and top layer 2 42, and the material that top layer 1 uses is IIIx
Ⅲ1-xAs, III is Al, Ga, In in group iii elements, 0≤x≤1, the GaAs that the material that top layer 2 42 uses adulterates for N-shaped.
Embodiment 1
As depicted in figs. 1 and 2, a kind of subband structures quantum dot cascade electrooptic detector includes the lining set gradually from the bottom to top
Bottom 1, lower contact layer 2, active area layer 3 and upper contact layer 4, lower contact layer 2, active area layer 3 and upper contact layer 4 are using solid
The growth of state source molecular beam epitaxy method is made；
Substrate layer 1 is made of GaAs materials；
Lower contact layer 2 includes bottom 1, bottom 2 22 and the bottom 3 23 being epitaxially grown to successively from the bottom to top, bottom
The GaAs that one 21 materials used adulterate for N-shaped, doping density are 1 × 1018cm-3, material that bottom 2 22 uses for
Al0.07Ga0.93As, the material that bottom 3 23 uses is Al0.7Ga0.7As；
It is Quantum Well cascaded transmission area 31, GaAs floor, subband structures successively from the bottom to top in each period of active area layer 3
Quantum dot stack layer 32, GaAs barrier layers and IIIxⅢ1-xAs potential barriers regulate and control electron transition energy level layer, and III is in group iii elements
Al, Ga, In, 0≤x≤1；
Upper contact layer 4 includes that the top layer 1 being arranged from the bottom to top and top layer 2 42, top layer 1 are located at active area layer 3
Upper point, the material that top layer 1 uses is IIIxⅢ1-xAs, III is Al, Ga, In in group iii elements, 0≤x≤1, top layer 2 42
The GaAs that the material used adulterates for N-shaped；
By the standardized method of photoetching, wet etching, metal deposit and lift-off technology, it is processed into a set of subband structures quantum
Point quanta cascade photodetector.
Embodiment 2
A kind of subband structures quantum dot cascade electrooptic detector includes the substrate layer 1 set gradually from the bottom to top, lower contact layer
2, active area layer 3 and upper contact layer 4, lower contact layer 2, active area layer 3 and upper contact layer 4 use solid-state source molecular beam epitaxy
Method growth is made；
Substrate layer 1 is made of InAs materials；
Lower contact layer 2 includes bottom 1, bottom 2 22 and the bottom 3 23 being epitaxially grown to successively from the bottom to top, bottom
The GaAs that one 21 materials used adulterate for N-shaped, doping density are 1 × 1018cm-3, material that bottom 2 22 uses for
Al0.07Ga0.93As, the material that bottom 3 23 uses is Al0.7Ga0.7As；
It is Quantum Well cascaded transmission area 31, GaAs floor, periodicity successively from the bottom to top in each period of active area layer 3
Subband structures quantum dot stack layer 32, GaAs barrier layers and IIIxⅢ1-xAs potential barriers regulate and control electron transition energy level layer, and III is three races's member
The material that the quantum well layer 311 in Al, Ga, In in element, 0≤x≤1, and Quantum Well cascaded transmission therein area 31 uses is
Al0.3Ga0.7As/GaAs, Al0.3Ga0.7As/In0.2Ga0.8As；
Upper contact layer 4 includes that the top layer 1 being arranged from the bottom to top and top layer 2 42, top layer 1 are located at active area layer 3
Upper point, the material that top layer 1 uses is IIIxⅢ1-xAs, III is Al, Ga, In in group iii elements, 0≤x≤1, top layer 2 42
The GaAs that the material used adulterates for N-shaped；
By the standardized method of photoetching, wet etching, metal deposit and lift-off technology, it is processed into a set of subband structures quantum
Point quanta cascade photodetector.
To described in embodiment 2 subband structures quantum dot quantum cascade electrooptic detector carry out parametric measurement, voltage be-
Under conditions of 0.1V, dark current density is 1.57 × 10 when measured temperature is 300K-5A/cm2, the dark current when temperature is 100K
Density is 8.02 × 10-9A/cm2, the value of the dark current measured is far below the quantum dot quantum cascade under current SK growth patterns
The value that photodetector is surveyed, temperature be 300K when, resistance-area than value be 4163 Ω cm2。
At different temperature, by Fourier Transform Infrared Spectrometer to quantum dot quantum under the conditions of normal incident light
Cascade electrooptic detector measures.At 700 DEG C, corrected by the blackbody radiation source of the chopper equipped with 140Hz modulating frequencies
The responsiveness of photodetector, measure the responsiveness for 6 μm or so wavelength is respectively when temperature is 77K, 100K and 130K
1.9mA/W, 1.13mA/W and 0.089mA/W.These measured values can be comparable to the quantum dot amount under current SK growth patterns
Sub- cascade electrooptic detector.
It calculates in 6 μm or so corresponding response wave crests, obtains when temperature is 130K to be 2.5 × 109cm·Hz1/2/ W, and
3.22 × 10 are risen in 77K11cm·Hz1/2/W。
The photodetector being prepared into as stated above for embodiment 1 is measured, it is contemplated that measurable wave-length coverage is
7-10μm。
These results indicate that the detectable wavelength of subband structures quantum dot quantum cascade electrooptic detector provided by the invention is in 6-
Infrared light near 10 μm, effectively improves detection performance.
It the above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair
The limitation of the present invention, protection scope of the present invention should be subject to claim limited range.For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, several improvements and modifications can also be made, these change
Protection scope of the present invention is also should be regarded as into retouching.
Claims (10)
1. a kind of subband structures quantum dot cascade electrooptic detector, which is characterized in that including substrate layer (1), in the upper of substrate layer (1)
Epitaxial growth goes out lower contact layer (2), active area layer (3) and upper contact layer (4), the active region successively from the bottom to top on surface
Domain layer (3) is periodic layer structure, includes the Quantum Well cascaded transmission area (31) and Asia being arranged from the bottom to top in each period
Single layer quantum dot stack layer (32).
2. subband structures quantum dot cascade electrooptic detector according to claim 1, which is characterized in that the Quantum Well grade
Join transmission range (31) if including dried layer quantum well layer (311).
3. subband structures quantum dot cascade electrooptic detector according to claim 2, which is characterized in that the quantum well layer
(311) energy difference of transition is the energy of vertical optical phonon between.
4. subband structures quantum dot cascade electrooptic detector according to claim 2, which is characterized in that the quantum well layer
(311) material used is IIIxⅢ1-xAs, III is Al, Ga, In in group iii elements, 0≤x≤1.
5. subband structures quantum dot cascade electrooptic detector according to claim 1, which is characterized in that the subband structures amount
Son point stack layer (32) includes using base made of GaAs materials and the subband structures amount using InAs Material growths in base
Sub- point.
6. subband structures quantum dot cascade electrooptic detector according to claim 5, which is characterized in that the subband structures amount
The InAs that son point is adulterated using N-shaped.
7. subband structures quantum dot cascade electrooptic detector according to claim 1, which is characterized in that the subband structures amount
Son point stack layer (32) is periodic.
8. subband structures quantum dot cascade electrooptic detector according to any one of claims 1 to 7, which is characterized in that described
Active area layer (3) further include GaAs potential barrier of the extension on subband structures quantum dot stack layer (32) within each period
Layer, and epitaxial growth has III on GaAs barrier layersxⅢ1-xAs potential barriers regulate and control electron transition energy level, and III is in group iii elements
Al, Ga, In, 0≤x≤1 further include being located at subband structures quantum dot stack layer (32) within each period of active area layer (3)
With the GaAs floor between Quantum Well cascaded transmission area (31).
9. subband structures quantum dot cascade electrooptic detector according to claim 1, which is characterized in that the lower contact layer
(2) include the bottom one (21), bottom two (22) and bottom three (23) set gradually from the bottom to top, the material that bottom one (21) uses
Material is the GaAs of N-shaped doping, and the material that bottom two (22) and bottom three (23) use is IIIxⅢ1-xAs, III is in group iii elements
Al, Ga, In, 0≤x≤1.
10. subband structures quantum dot cascade electrooptic detector according to claim 1, which is characterized in that the upper contact
Layer (4) includes the top layer one (41) being arranged from the bottom to top and top layer two (42), and the material that top layer one (41) uses is IIIxⅢ1- xAs, III is Al, Ga, In in group iii elements, 0≤x≤1, the GaAs that the material that top layer two (42) uses adulterates for N-shaped.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101262025A (en) * | 2008-04-18 | 2008-09-10 | 中国科学院上海技术物理研究所 | Quanta amplified p type quanta trap infrared detector |
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2018
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| CN101271933A (en) * | 2007-03-21 | 2008-09-24 | 中国科学院半导体研究所 | Quantum point-trap infrared detector structure and method for producing the same |
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