CN108493202B - UTBB photoelectric detection element and device suitable for submicron pixels - Google Patents
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- 238000001514 detection method Methods 0.000 title abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000002955 isolation Methods 0.000 claims abstract description 16
- 238000005286 illumination Methods 0.000 claims abstract description 14
- 230000005669 field effect Effects 0.000 claims abstract description 12
- 239000000969 carrier Substances 0.000 claims description 34
- 230000005684 electric field Effects 0.000 claims description 10
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 238000012772 sequence design Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000010748 Photoabsorption Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
A UTBB photodetection element and apparatus that accommodates sub-micron pixels, wherein the UTBB photodetection element comprises: the UTBB structure and the field effect transistor arranged on the upper surface of the UTBB structure are characterized by comprising asymmetric source end and drain end regions, and the illumination intensity is indirectly evaluated according to the current of the drain end through the influence of a photo-generated carrier on the threshold voltage of the field effect transistor. The invention has the advantages that on the microstructure, only one transistor is included in a single pixel unit, the volume of the single pixel unit is reduced, the pixel unit adopts a groove isolation mode, the crosstalk is reduced, the substrate structure can adopt uniform doping, and the element damage caused by the process and the injection process is simplified. In a macroscopic structure, the composition mode of the detection element array is compatible with the existing SOI MOSFET process, so that the array time sequence design is convenient, and the detection element array is more suitable for submicron pixels.
Description
Technical Field
The invention relates to the field of silicon-based photoelectric detection, in particular to a UTBB photoelectric detection element and a UTBB photoelectric detection device suitable for submicron pixels, which are used for photoelectric imaging in the fields of military affairs, medical treatment, automobile mobile equipment and the like.
Background
At present, Charge-coupled devices (CCD Charge-coupled devices) or Complementary Metal oxide semiconductor (CMOS Complementary Metal oxide semiconductor) elements are generally used as the main detecting elements of the detecting Device, wherein the CCD photoelectric detecting elements directly perform photoelectric detection through Charge transfer, and the CMOS photoelectric detecting elements need to collect charges through photodiodes and then convert the charges into voltage signals, and then amplify the voltage signals through CMOS circuits to perform photoelectric detection. The two photoelectric detection elements have respective advantages and disadvantages, the CCD is a current signal in a row unit, the CMOS is a charge signal in a point unit, the CCD is exposed once, pixel transfer processing is carried out after a shutter is closed, the charge signal of each pixel unit in each row is sequentially transmitted into a buffer, and is guided by a line at the bottom end to be output to an amplifier beside the CCD for amplification. In contrast, an amplifier is arranged beside each pixel unit in the CMOS design, so that the pixel structure of the CMOS is more complicated than that of the CCD, and the noise is more due to the difference of each amplifier. In contrast, since the amplifier is beside the CMOS photodiode, the charge driving method can adopt an active driving method without an additional driving voltage. The charge driving of the CCD is passive, extra voltage is applied to move the charge in each pixel unit to the transmission channel, and the applied voltage needs to reach a level above 12V, so that the CCD has to have more precise power line design and voltage endurance, which makes the power consumption and process level much higher than those of the CMOS. In addition, due to the structural limitation of the device, a single pixel unit of two types of photoelectric detection elements respectively comprises a plurality of transistor element structures and the like, so that the size of the pixel is limited to be more than micrometer magnitude and cannot be further reduced.
In addition to the above, there is also a scheme of using a UTBB (Ultra-Thin Body and Body Ultra-Thin Body and buried oxide) structure as an image sensor, in which a p-n junction type photodiode or a p-i-n junction type photodiode is combined with a UTBB structure as a substrate structure of a photo-absorption region to perform photodetection. However, in the scheme, the isolation between the pixels is performed by using the insulating spacers, so that the crosstalk is large, and the substrate is doped non-uniformly, so that an additional injection process is required, and the process difficulty is large.
Disclosure of Invention
In view of the above, according to one aspect of the present invention, there is disclosed a UTBB photodetection element adapted to sub-micron pixels, comprising: the UTBB structure comprises a UTBB structure and a field effect transistor arranged on the upper surface of the UTBB structure.
Preferably, the field effect transistor includes: the source terminal and the drain terminal are isolated at two sides of the channel, and the gate terminal is positioned above the channel and is isolated from the channel through an insulating oxide.
More preferably, the drain end structure has a width in the horizontal direction larger than that of the source end structure.
Preferably, the UTBB structure comprises: the buried oxide layer and the substrate which is in contact with the buried oxide layer.
Preferably, the element has isolation regions at both ends.
More preferably, the element indirectly evaluates the illumination intensity according to the drain terminal current by applying an opposite potential to the drain terminal and the substrate to enable photogenerated carriers to be gathered in the substrate below the drain terminal, and then applying the same potential as the drain terminal to the gate terminal, so that photogenerated carriers are gathered in the substrate below the gate terminal, and the photogenerated carriers below the gate terminal have an influence on the threshold voltage of the field effect transistor.
More preferably, the element sets the source terminal and the drain terminal to zero potential and the substrate to positive potential, so that the collected photon-generated carriers drift out through the substrate under the action of an electric field, and the resetting process of the photodetector is completed.
In accordance with another aspect of the present invention, there is disclosed a UTBB photodetector apparatus adapted to sub-micron pixels, comprising: a pixel cell array comprising M x N elements as claimed in any one of claims 1 to 7, wherein M, N is a natural number equal to or greater than 2.
Preferably, the device further comprises M rows of word lines, N columns of bit lines, a common source terminal and a common substrate terminal, wherein the gates of the elements of each row are connected to the word lines, the drains of the elements of each column are connected to the bit lines, the sources of all the elements are connected to the common source terminal, and the substrates of all the elements are connected to the common substrate terminal.
More preferably, the isolation between the elements is a trench isolation.
The invention has the advantages that on the microstructure, only one transistor is included in a single pixel unit, the volume of the single pixel unit is effectively reduced, the isolation mode of the pixel unit adopts a 'groove' isolation mode, the crosstalk is effectively reduced, the drain terminal structure is enlarged, the detection element can apply bias voltage to the substrate through the drain terminal to form an electric field in the collection stage of photo-generated carriers, so that the photo-generated carriers drift and gather below the buried oxide layer, the larger drain terminal structure improves the photoelectric conversion efficiency, the substrate structure adopts uniform doping, an additional injection process is not needed, the process is simplified, and the production difficulty and the element damage caused by the injection process are reduced. In a macroscopic structure, the connection mode of the detection element array is compatible with the existing SOI MOSFET process, so that the array time sequence design is convenient, and the detection element array is more suitable for submicron pixels.
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Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the specific embodiments. The drawings are only for purposes of illustrating the particular embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic structural diagram of a detecting element of the present invention.
Fig. 2 is a diagram showing the structure of the energy band in the vertical direction in the center of the gate terminal dielectric according to the present invention.
FIG. 3 is a diagram of the band structure in the vertical direction at the center of the medium at the drain end of the present invention.
Fig. 4 is an output characteristic curve of the detecting element of the present invention.
Fig. 5 is a schematic structural diagram of a preferred embodiment of the detection device of the present invention.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
As shown in fig. 1, the present invention provides a UTBB photoelectric detection element adapted to sub-micron pixels, wherein 1 is a channel, 2 is a source terminal region, 3 is a drain terminal region, 4 is an isolation region, 5 is a buried oxide layer, 6 is a substrate, 7 is a gate terminal electrode, the buried oxide layer 5 and the substrate 6 form a UTBB structure, the buried oxide layer 5 is above a MOSFET structure, and includes the source terminal region 2, the channel region 1, the drain terminal region 3 and the gate terminal electrode 7, a gate terminal is above the channel 1, the channel 1 is separated from the gate terminal electrode by an insulating oxide (a portion between the channel 1 and the gate terminal electrode 7), the source terminal 2 and the drain terminal 3 are separated by the channel 1, and the drain terminal region 3 is wider than the source terminal region 2 in the horizontal direction, the UTBB structure and the MOSFET structure together form the detection element of the present invention, that is a pixel unit constituting the detection device of the present invention. The MOSFET structure is used for generating electric signals which change along with different illumination intensities, the substrate area 6 is arranged below the buried oxide 5 and is a main photosensitive area and used for generating an internal electro-optical effect and generating photon-generated carriers (electron-hole pairs), and the isolation area 4 adopts a groove isolation mode and is used for isolating each pixel unit from each other, and the groove isolation mode can effectively inhibit crosstalk among the pixel units. Alternatively, light may be applied to one side of the MOSFET structure, alternatively, light may be applied to the substrate side.
Specifically, the length (Lg) of a channel is about 20-100 nm, the thickness (Tsi) of a silicon film is about 5-20 nm, a source end and a drain end adopt asymmetric structures, the length (Ls) of a source end region is about 20-40 nm, the length (Ld) of a drain end region is about 100-1500 nm, the thickness (Tbox) of an oxygen buried layer is about 10-30 nm, a lower substrate is a photon-generated carrier collecting region, the doping type of the substrate is consistent with that of the channel, P-type doping is adopted, a light doping structure is further adopted, and the doping concentration is about 1 x 1016/cm3～1×1017/cm3Light enters the photoelectric detector from the upper part of the device, the photoelectric detector is isolated among pixels in a groove isolation mode, the isolation depth is about 0.1-3 mu m, on the premise of measuring the length of each region and the detection effect, the size of a single pixel unit in the UTBB-based detection device can be reduced to be below 1 mu m to reach a nanometer level, and only one transistor is included in a single pixel, so that the size of the pixel unit is greatly reduced.
Thus, by introducing the UTBB (Ultra-Thin Body and Body Ultra-Thin Body and buried oxide) structure and the MOSFET field effect transistor on the upper surface of the UTBB structure, the UTBB structure has a smaller size than the conventional CCD detection device and CMOS detection device structure.
In the invention, the UTBB consists of a buried oxide layer and a substrate in contact with the buried oxide layer, under illumination, photon-generated carriers can be gathered in the substrate under the buried oxide layer under the forward bias voltage of the drain electrode of the MOSFET, because the buried oxide layer is very thin, relatively, the photogenerated carriers gathered under the grid end in the reading stage can also generate the electric field effect on the inversion type carriers of the channel in the MOSFET structure above the photogenerated carriers, so that the number of inversion carriers in the channel is reduced, thereby affecting the threshold voltage of the MOSFET field effect transistor, the influence degree on the threshold voltage is different with the quantity of the photogenerated carriers, the more photogenerated carriers can cause the quantity of inversion carriers in the channel to be less, the MOSFET field effect transistor has larger threshold voltage, and evaluating the illumination intensity according to the difference of drain currents under different threshold voltages by measuring the drain current in the MOSFET. Compared with the traditional photoelectric detector which takes a CCD photoelectric device or a CMOS photoelectric device, the photoelectric detector reduces a plurality of transistors in a traditional single pixel unit into a single transistor (MOSFET transistor), thereby effectively reducing the volume of the single pixel unit, leading the volume of the photoelectric imaging detector to be smaller under the same pixel requirement, having higher pixels in the photoelectric imaging detector with the same size and having better display effect.
Compared with the existing UTBB structure, the nMOSFET structure above the BOX (buried oxide) buried oxide layer adopts a source-drain asymmetric structure, and a larger depletion region is formed below a drain end in the collection stage of the enlarged drain end structure, so that more photon-generated carriers can be gathered, and the photoelectric conversion efficiency of the detector is improved. In addition, as the field effect transistor is adopted above the UTBB structure in the photoelectric detection element, when a pixel unit array is formed, the grid of each row of elements is connected with the word line of the device, the drain of each column of elements is connected with the bit line of the device, the sources of all the elements are connected with the common source terminal, and the substrates of all the elements are connected with the common substrate terminal, so that the process for forming the pixel unit array is compatible with the traditional SOI-MOSFET process, and the applicability of the invention is increased.
By applying different potentials to the source end and the drain end in the MOSFET structure and the substrate in the UTBB structure, the working process of the detection element can be divided into four stages of initialization, collection, reading and resetting, and the corresponding relation is as follows:
specifically, the working process of the detection element of the invention is as follows:
(1) initialization of the photodetector: and setting the source end, the grid end, the drain end and the substrate to zero potential to prepare for collecting photon-generated carriers and finish the initialization of the device.
(2) Collection of photogenerated carriers: the photogenerated carriers are a pair of electron-hole pairs, generated by the photoelectric effect of the semiconductor, when a photon is absorbed by the semiconductor, a pair of electron-hole pairs is generated, so the illumination intensity can be determined according to the number of generated electrons or holes, the substrate in the UTBB structure is set at a negative potential, the drain is set at a positive potential, so an electric field pointing to the substrate from the drain is generated, when no electric field exists, the photogenerated carriers are continuously generated and are continuously recombined in the substrate, the electrons and the holes cannot be separated, when the electric field pointing to the substrate from the drain is generated, because the buried oxide layer is thin, the electric field is easily acted on the substrate through the buried oxide layer, the holes in the substrate are repelled, so a depletion layer is generated in the substrate under the electric field, the photogenerated carriers (electrons) are attracted, and are gathered in the depletion layer of the substrate to form an inversion layer, after the light irradiation is stopped, the photogenerated carriers (electrons) are locked in the inversion layer, thereby realizing the collection of the photogenerated carriers (electrons). According to the invention, the drain end structure is enlarged, so that a larger depletion layer can be formed below the drain end, and more photon-generated carriers (electrons) can be accommodated, so that more effective signals (electrons) can be collected within unit exposure time, and the photoelectric conversion efficiency of the detector is improved.
(3) Reading of photocurrent: after photogenerated carriers (electrons) are collected, an optical signal is read through drain current of an nMOSFET structure above a BOX (buried oxide) buried oxide layer. The substrate in the UTBB structure is set with a negative potential, the gate terminal and the drain terminal are set with a positive potential, because the distance between the gate and the drain is very close, a depletion layer and an inversion layer below the gate are overlapped with a depletion layer and an inversion layer below the drain, photogenerated carriers (electrons) are also distributed in the substrate below the gate, a buried oxide layer and the substrate form a structure similar to a capacitor, the electrons form an electric field, the inversion carriers in a channel below the gate are reduced, and the threshold voltage of the MOSFET is increased. Under different illumination, the quantity of photon-generated carriers (electrons) collected by the substrate below the buried oxide layer is different, so that the threshold voltages of MOSFET devices are different, the currents of drain ends are different, and the illumination intensity is indirectly evaluated by detecting the currents of the drain ends of the MOSFET devices.
(4) Resetting the photoelectric detector: the reset of the photoelectric detector is used for releasing photon-generated carriers (electrons) generated in the illumination stage, after the optical signal is read, the source and drain electrodes are set to be at zero potential, the substrate is set to be at positive potential (the reset potential is about 1-2 times of the working potential), and the gathered photon-generated carriers (electrons) drift out through the substrate under the action of an electric field, so that the reset process of the photoelectric detector is completed. Optionally, the doping structure of the substrate is doped non-uniformly, preferably, the doping structure of the substrate is doped uniformly, and the uniform doping structure does not need an additional implantation process, so that the process is simplified, and the production difficulty and the element damage caused by the implantation process can be reduced.
As shown in fig. 2 and 3, where the line 1 is an initial state band structure, the line 2 is a collection process band structure, the line 3 is a reading process band structure, the line 4 is a reset process band structure, the abscissa of the figure represents the thickness of the UTBB structure, and the ordinate represents the energy of the band, the band structures as shown in the figures are different according to the difference of potentials in the gate terminal and the drain terminal in different processes, and the band structure in the gate terminal is affected by the PN junction, so that the energy band is subjected to tilt deformation.
Fig. 4 is an output characteristic curve of the photodetector of the present invention, wherein line 5 is an output characteristic curve after illumination, and line 6 is an output characteristic curve before illumination, and it can be seen from the graph that the threshold voltage (gate terminal voltage) increases and the leakage current decreases after illumination, so the illumination intensity can be indirectly evaluated by detecting the leakage current.
Fig. 5 is a schematic structural diagram of a preferred embodiment of the detecting device of the present invention, wherein an array including nine detecting elements is formed in three rows and three columns to form the detecting device, and each detecting element is controlled by crossing three word lines and three bit lines. The above described detection array format is only one preferred embodiment of the present invention, and in fact, other array formats are permissible and can be adjusted according to actual detection needs. Such as a 2 x 2 or 4 x 4 or 4 x 5 array … …, etc.
In fig. 5, the gates of the elements in each row are connected to the word line of the device, the drains of the elements in each column are connected to the bit line of the device, the sources of all the elements are connected to the common source terminal, and the substrates of all the elements are connected to the common substrate terminal, so that the control of each detecting element is realized. The process for forming the pixel unit array is compatible with the traditional SOI-MOSFET process, and the applicability of the invention is increased.
Alternatively, the doping type of the substrate in the present invention may be the opposite doping type to the channel doping type.
Alternatively, the MOSFET of the present invention may be a P-type MOSFET, i.e., the channel is N-type.
The above description is only an exemplary embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. A UTBB photodetecting element adapted to sub-micron pixels, comprising: the transistor structure comprises a UTBB structure and a field effect transistor arranged on the upper surface of the UTBB structure;
the field effect transistor includes: a gate terminal, a source terminal and a drain terminal;
the source terminal and the drain terminal are isolated at two sides of the channel, and the gate terminal is positioned above the channel and is isolated from the channel through an insulating oxide;
the element enables photogenerated carriers to be gathered in the substrate below the drain end by applying opposite potential to the drain end and the substrate, and then the grid end is applied with the same potential as the drain end, so that the photogenerated carriers are gathered in the substrate below the grid end, the photogenerated carriers below the grid end affect the threshold voltage of the field effect transistor, and the illumination intensity is indirectly evaluated according to the current of the drain end.
2. The element according to claim 1, characterized in that it comprises: the width of the drain end structure in the horizontal direction is larger than that of the source end structure.
3. The element of claim 1, wherein the UTBB structure comprises: the buried oxide layer and the substrate which is in contact with the buried oxide layer.
4. The element according to claim 1, characterized in that it comprises: the element has isolation regions at both ends.
5. The device of claim 1, wherein the device completes the reset process of the photodetector by setting the source terminal and the drain terminal to zero potential and the substrate to positive potential, so that the collected photo-generated carriers drift away through the substrate under the action of the electric field.
6. An UTBB photodetector arrangement for accommodating sub-micron pixels, comprising: a pixel cell array comprising M x N elements as claimed in any one of claims 1 to 5, wherein M, N is a natural number equal to or greater than 2.
7. The apparatus of claim 6, comprising: the device further comprises M rows of word lines, N columns of bit lines, a common source terminal and a common substrate terminal, wherein the gates of the elements of each row are connected to the word lines, the drains of the elements of each column are connected to the bit lines, the sources of all the elements are connected to the common source terminal, and the substrates of all the elements are connected to the common substrate terminal.
8. The apparatus of claim 6, comprising: the isolation between the elements is a trench isolation.
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|---|---|---|---|---|
| CN1241037A (en) * | 1998-07-01 | 2000-01-12 | 高扬科技公司 | Solid-state imaging device and method of detecting optical signals using the same |
| CN103633084A (en) * | 2012-08-21 | 2014-03-12 | 意法半导体公司 | Electronic device including shallow trench isolation (sti) regions with bottom oxide linear and upper nitride liner and related methods |
| CN103633131A (en) * | 2012-08-21 | 2014-03-12 | 意法半导体公司 | Electronic device including shallow trench isolation (sti) regions with bottom nitride liner and upper oxide liner and related methods |
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