CN108462399A - A kind of high efficiency rectifier - Google Patents

A kind of high efficiency rectifier Download PDF

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Publication number
CN108462399A
CN108462399A CN201810027390.XA CN201810027390A CN108462399A CN 108462399 A CN108462399 A CN 108462399A CN 201810027390 A CN201810027390 A CN 201810027390A CN 108462399 A CN108462399 A CN 108462399A
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CN
China
Prior art keywords
power
diode
switch tube
anode
power switch
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Pending
Application number
CN201810027390.XA
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Chinese (zh)
Inventor
李楚杉
李武华
雷锦涛
许德伟
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Zhejiang University ZJU
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Zhejiang University ZJU
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Priority to CN201810027390.XA priority Critical patent/CN108462399A/en
Publication of CN108462399A publication Critical patent/CN108462399A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/2173—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a biphase or polyphase circuit arrangement
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H02M1/346—Passive non-dissipative snubbers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

The invention discloses a kind of high efficiency rectifiers comprising DC power supply, derided capacitors module, two silicon-based diode modules, Absorption Capacitance, silicon carbide-based mos field effect transistor and filter inductance.The characteristics of rectifier of the present invention, is that only silicon carbide-based mos field effect transistor is acted with HF switch, therefore switching loss is small；Compared to complete silicon carbide-based rectifier scheme, technical solution of the present invention is low due to using silicon-based power diode, overall cost；The rectifier is suitable for mesohigh, high-power applications Active Front End occasion.

Description

A kind of high efficiency rectifier
Technical field
The invention belongs to power electronics fields, and in particular to a kind of high efficiency rectifier.
Background technology
AC-DC active rectifier technologies are the very important component parts of modern industry, it is adjustable speed motor, electronic vapour The grid types power equipment such as vehicle charging pile and communication system provide DC power supply, its extensive use can reduce current harmonics and Additional wires caused by low-power factor are lost, and improve energy efficiency, realize energy-saving and emission-reduction.
Simplest active rectification equipment is that diode rectification input is followed by Boost circuit, and the program is simple in structure, Technology maturation.But rectifier diode conduction loss is high, the diode reverse recovery losses of booster circuit under high frequency switch-mode The problems such as high, makes such circuit efficiency not high, is generally only used for small-power occasion.
Bridgeless boost type rectifier structure is suitable for monophase system, is applied to Bridgeless boost type rectifier three when three-phase system Phase direct current output needs are mutually isolated, therefore DC capacitor volume is big, and power density is low.
In document Single inductor three-level bridgeless boost power factor correction rectifier with nature voltage clamp(IET Power Electron,2012.5(3): P.358-365 Vienna three-level rectifiers are mentioned in), such rectifier to the control of two switching tubes by realizing three level AC-DC rectifications, conversion efficiency is high, is usually used in high power mesohigh occasion；But diode is connected with high frequency in the program And shutdown, diode reverse recovery losses are big.
The loss of semiconductor device portion in power conversion can be substantially reduced using silicon carbidebased devices, be based on silicon carbide The three-level rectifier of diode and silicon based metal oxide semiconductor field effect transistor is partly led due to silicon based metal oxide Body field-effect transistor parasitic capacitance is big, and switching loss is still higher；But use silicon carbide diode and silicon carbide based metal oxide Although the three-level rectifier of object semiconductor field effect transistor can significantly reduce switching loss, with high costs.
Invention content
In view of above-mentioned, the present invention provides a kind of high efficiency rectifier, use using silicon-based power diode, overall cost It is low, and only silicon carbide-based mos field effect transistor is acted with HF switch, therefore switching loss is small.
A kind of high efficiency rectifier, including DC power supply VDC, two derided capacitors CDC1~CDC2, four power diode D1~ D4, Absorption Capacitance CS, filter inductance L and two power switch tube Q with anti-paralleled diode5~Q6；Wherein, DC power supply VDCAnode with derided capacitors CDC1Anode and power diode D1Cathode be connected, DC power supply VDCCathode and partial pressure Capacitance CDC2Cathode and power diode D4Anode be connected, derided capacitors CDC1Cathode and derided capacitors CDC2Anode, Power diode D2Anode, power diode D3Cathode and external communication source low-pressure end be connected, power diode D1's Anode and power diode D2Cathode, Absorption Capacitance CSAnode and power switch tube Q5Drain terminal be connected, power diode D3Anode and power diode D4Cathode, Absorption Capacitance CSCathode and power switch tube Q6Source be connected, power is opened Close pipe Q5Source and power switch tube Q6Drain terminal and one end of filter inductance L be connected, the other end of filter inductance L with it is outer The high-pressure side of portion's alternating current source is connected, power switch tube Q5And Q6The switching signal that provides of the external control device of grid end.
Further, the power diode D1~D4It is all made of silicon-based power diode.
Further, the power switch tube Q5And Q6It is all made of silicon carbide-based metal oxide semiconductor field effect transistor Pipe, the reverse recovery loss of body diode when can reduce field-effect tube shutdown in this way.
Further, the power switch tube Q5And Q6Switch phase is complementary and switching frequency be high frequency i.e. 1KHz with On, so that each silicon-based power diode carries out turn-on and turn-off with low frequency, break-make frequency is identical as the frequency of power grid, And power diode D1With D3Complementation conducting, power diode D2With D4Complementation conducting.
Based on the above-mentioned technical proposal, the present invention has the following advantages compared with prior art：
(1) silicon diode in the present invention carries out turn-on and turn-off with low frequency, and two silicon carbide switches pipes carry out high frequency and open It closes, switching loss is low, and conversion efficiency is high.
(2) rectifier of the present invention uses two pole of silicon carbide-based mos field effect transistor and silicon-based power Pipe, cost are substantially reduced compared to full silicon carbide device scheme.
(3) rectifier of the present invention is derived from Vienna three-level rectifiers, and DC side substantially reduces direct current without isolation Capacitance volume, power density are high.
(4) Absorption Capacitance in the present invention provides necessary buffering for silicon carbide-based metal oxide semiconductor field effect tube Circuit absorbs the energy in parasitic lead reactance in silicon carbide-based metal oxide semiconductor field effect tube handoff procedure, significantly The influence for reducing circuit parasitic lead reactance reduces the voltage stress of switching device；Meanwhile the Absorption Capacitance has auxiliary The effect of electric current commutation.
Description of the drawings
Fig. 1 is the structural schematic diagram of high efficiency rectifier of the present invention.
Fig. 2 is the sequence diagram of transistor gate signal in high efficiency rectifier of the present invention.
Fig. 3 (a)~Fig. 3 (d) is respectively the schematic equivalent circuit under four kinds of mode of high efficiency rectifier of the present invention.
Specific implementation mode
In order to more specifically describe the present invention, below in conjunction with the accompanying drawings and specific implementation mode is to technical scheme of the present invention It is described in detail.
As shown in Figure 1, high efficiency rectifier structure of the present invention includes DC power supply VDC, derided capacitors module, two silicon substrates two Pole pipe module, Absorption Capacitance CS, silicon carbide-based mos field effect transistor module and filter inductance L；Wherein, Derided capacitors module includes the first DC partial voltage capacitance CDC1With the second DC partial voltage capacitance CDC2；Silicon-based diode module includes the One group of silicon-based diode module and second group of silicon-based diode module；First group of silicon-based diode module includes two pole of the first power Pipe D1With the second power diode D2, second group of silicon-based diode module includes third power diode D3With two pole of the 4th power Pipe D4；Silicon carbide-based mos field effect transistor module includes band anti-paralleled diode D5The 5th power open Close pipe Q5, band anti-paralleled diode D6The 6th power switch tube Q6。
First power diode D1Cathode connects the first DC partial voltage capacitance CDC1Anode, DC power supply VDCAnode；First work( Rate diode D1Anode is separately connected the second power diode D2Cathode, Absorption Capacitance CSAnode, band anti-paralleled diode D5 Five power switch tube Q5Drain electrode；Second power diode D2Anode is connected respectively to third power diode D3Cathode, the first direct current Derided capacitors CDC1Cathode, the second DC partial voltage capacitance CDC2Anode, power grid VgOne end；Third power diode D3Anode is distinguished Connect the 4th power diode D4Cathode, Absorption Capacitance CSCathode, band anti-paralleled diode D6The 6th power switch tube Q6Source Pole；4th power diode D4Anode connects the second DC partial voltage capacitance CDC2Cathode, DC power supply VDCCathode；Band inverse parallel two Pole pipe D5The 5th power switch tube Q5Source electrode connect band anti-paralleled diode D6The 6th power switch tube Q6Source drain, filter One end of wave inductance L；The other end connection power grid V of filter inductance LgThe other end.
Silicon-based diode module is widely used in various power conversion systems, but switching loss is big.Therefore, silicon substrate The switching frequency of diode (led) module is limited in a certain frequency；In contrast with silicon-based diode module, silicon carbide-based metal oxygen Lower switching loss can be presented in compound semiconductor field effect transistor module, and can be in higher temperature than two pole of silicon substrate Tube module more effectively switches.
In the present embodiment, the silicon-based diode module selection silicon-based power diode and carbon in high efficiency rectifier system SiClx metal oxides semiconductor field effect transistor.Silicon-based power diode may include the various types of of different rated values Silicon-based power diode (such as 1.7kV, 3.3kV, 4.5kV or 6.5kV silicon diode)；Silicon carbide-based metal-oxide semiconductor (MOS) Field-effect transistor may include various types of silicon carbide-based mos field effect transistor of different rated values.
The switching of silicon-based power diode is determined by high efficiency rectifier ac-side current；Silicon carbide-based metal oxide is partly led The switching of body field-effect transistor can be controlled by providing the grid signal of its grid, and control waveform is as shown in Fig. 2, two-way triangle Carrier wave is compared generation control signal with AC current modulation signal, and the peak value of wherein two-way triangular carrier is equal, and triangle Carrier wave C1Minimum value and triangular carrier C2Maximum value it is equal, triangular carrier C1Minimum value be zero；When modulating wave be more than zero and More than triangular carrier C1, the 5th power switch tube Q5Conducting, otherwise the 5th power switch tube Q5Shutdown；When modulating wave be less than 0, and More than triangular carrier C2, the 5th power switch tube Q5Conducting, otherwise the 5th power switch tube Q5Shutdown；5th power switch tube Q5 With the 6th power switch tube Q6Control signal be complementary signal, the 5th power switch tube Q5When conducting, the 6th power switch tube Q6 Shutdown, otherwise the 6th power switch tube Q6Conducting.
In the positive half cycle of inductive current, there are two types of operation modes for high efficiency rectifier：
Mode 1：Shown in equivalent circuit such as Fig. 3 (a), the first power diode D1, third power diode D3With the 5th power Switching tube Q5Conducting, the shutdown of other power switch tubes；Third power diode D3Although no electric current flows through, due to the 6th Power switch tube Q6For silicon carbide-based mos field effect transistor, turn-off speed is far faster than silicon diode； 6th power switch tube Q6When shutdown, third power diode D3Electric current has been zero, but still in the conduction state, on diode Charge does not have release way, therefore tends to remain on；Third power diode D3Conducting is so that the 6th switching tube Q6Two pole of body Tetra- power diode D of Guan Yu4On be solely subjected to VDC/ 2 voltage.
Mode 2：Shown in equivalent circuit such as Fig. 3 (b), the first power diode D1, third power diode D3With the 6th power Switching tube Q6Conducting, the shutdown of other power switch tubes.
When being switched to mode 2 from mode 1, the 5th power switch tube Q5Shutdown, the 6th power switch tube Q6Conducting, electric current return Five power switch tube Q of Lu Cong5It is switched to the 6th power switch tube Q6.Due to the 5th power switch tube Q5For silicon carbide-based metal Oxide semiconductor field effect transistor, turn-off speed is far faster than silicon diode.5th power switch tube Q5When shutdown, first Power diode D1Electric current has been zero, but diode charge does not have Releasing loop, and Absorption Capacitance CSBoth end voltage ensures The first power diode D1It is not subject to backward voltage, therefore the first power diode D1It tends to remain on.First power two Pole pipe D1Conducting is so that the 5th power switch tube Q5Body diode and the 4th power diode D4On to be solely subjected to half direct current female Line voltage.
In commutation course, the 5th power switch tube Q is flowed through5Electric current decline rapidly, flow through the 6th power switch tube Q6Electricity Stream is rapid to be risen, and sum of the two is the electric current on load inductance, and size can be considered constant in switching instant, therefore flow through two The electric current of switching tube lead-in inductance has trend on the contrary, the identical change rate of size.During current commutation, Absorption Capacitance CSIt inhales The energy in power switch tube lead-in inductance is received, voltage overshoot caused by substantially reducing parasitic lead inductance reduces work( The voltage stress of rate switching tube.
In the negative half period of inductive current, there are two types of operation modes for high efficiency rectifier：
Mode 3：Shown in equivalent circuit such as Fig. 3 (c), the second power diode D2, the 4th power diode D4With the 6th power Switching tube Q6Conducting, the shutdown of other power switch tubes.
Mode 4：Shown in equivalent circuit such as Fig. 3 (d), the second power diode D2, the 4th power diode D4With the 5th power Switching tube Q5Conducting, the shutdown of other power switch tubes.
When being switched to mode 4 from mode 3, the 5th power switch tube Q5Conducting, the 6th power switch tube Q6Shutdown, electric current return Six power switch tube Q of Lu Cong6It is switched to the 5th power switch tube Q5.Due to the 6th power switch tube Q6For silicon carbide-based metal Oxide semiconductor field effect transistor, turn-off speed is far faster than silicon diode.6th power switch tube Q6When shutdown, the 4th Power diode D4Electric current has been zero, but diode charge does not have Releasing loop, and Absorption Capacitance CSBoth end voltage ensures 4th power diode D4It is not subject to backward voltage, therefore the 4th power diode D4It tends to remain on.4th power two Pole pipe D4Conducting is so that the 6th power switch tube Q6Body diode and the first power diode D1On to be solely subjected to half direct current female Line voltage；
In commutation course, the 6th power switch tube Q is flowed through6Electric current decline rapidly, flow through the 5th power switch tube Q5Electricity Stream is rapid to be risen, and sum of the two is the electric current on load inductance, and size can be considered constant in switching instant, therefore flow through two The electric current of switching tube lead-in inductance has trend on the contrary, the identical change rate of size.During current commutation, Absorption Capacitance CSIt inhales The energy in power switch tube lead-in inductance is received, voltage overshoot caused by substantially reducing parasitic lead inductance reduces work( The voltage stress of rate switching tube.
The above-mentioned description to embodiment can be understood and applied the invention for ease of those skilled in the art. Person skilled in the art obviously easily can make various modifications to above-described embodiment, and described herein general Principle is applied in other embodiment without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability Field technique personnel announcement according to the present invention, the improvement made for the present invention and modification all should be in protection scope of the present invention Within.

Claims (3)

1. a kind of high efficiency rectifier, it is characterised in that：Including DC power supply VDC, two derided capacitors CDC1~CDC2, four power Diode D1~D4, Absorption Capacitance CS, filter inductance L and two power switch tube Q with anti-paralleled diode5~Q6；Wherein, DC power supply VDCAnode with derided capacitors CDC1Anode and power diode D1Cathode be connected, DC power supply VDCIt is negative Pole and derided capacitors CDC2Cathode and power diode D4Anode be connected, derided capacitors CDC1Cathode and derided capacitors CDC2Anode, power diode D2Anode, power diode D3Cathode and external communication source low-pressure end be connected, power Diode D1Anode and power diode D2Cathode, Absorption Capacitance CSAnode and power switch tube Q5Drain terminal be connected, Power diode D3Anode and power diode D4Cathode, Absorption Capacitance CSCathode and power switch tube Q6Source It is connected, power switch tube Q5Source and power switch tube Q6Drain terminal and filter inductance L one end be connected, filter inductance L's The other end is connected with the high-pressure side in external communication source, power switch tube Q5And Q6The switch letter that provides of the external control device of grid end Number；The power switch tube Q5And Q6It is all made of silicon carbide-based mos field effect transistor.
2. high efficiency rectifier according to claim 1, it is characterised in that：The power diode D1~D4It is all made of silicon substrate Power diode.
3. high efficiency rectifier according to claim 1, it is characterised in that：The power switch tube Q5And Q6Switch phase Complementary and switching frequency is high frequency i.e. in 1KHz or more.
CN201810027390.XA 2018-01-11 2018-01-11 A kind of high efficiency rectifier Pending CN108462399A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110086360A (en) * 2019-04-22 2019-08-02 浙江大学 A kind of five level high efficiency rectifiers
CN112865560A (en) * 2021-01-28 2021-05-28 三峡大学 Multi-diode series back-to-back bridgeless three-level rectifier
CN112865561A (en) * 2021-01-28 2021-05-28 三峡大学 Diode clamping type back-to-back bridgeless three-level rectifier

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CN101264546A (en) * 2008-05-09 2008-09-17 北京工业大学 High-frequency inversion arc-welding power supply main power system
CN101588126A (en) * 2009-06-24 2009-11-25 哈尔滨工业大学 The ZVZCS three-level DC-DC converter of wide load characteristic
CN101728964A (en) * 2010-01-12 2010-06-09 浙江大学 Bridgeless power factor correction converter with single inductance and three levels
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CN102629836A (en) * 2012-04-23 2012-08-08 山东大学 Novel two-stage alternating-current photovoltaic module
US9172301B2 (en) * 2013-05-07 2015-10-27 Hamilton Sundstrand Corporation Synchronous rectification in the three-level inverter-converter topologies
CN106817032A (en) * 2017-03-24 2017-06-09 合肥博鳌电气科技有限公司 A kind of neutral balance circuit and control method for half-bridge three-level direct current converter
CN106936327A (en) * 2015-12-29 2017-07-07 通用电气公司 Hybrid converter system

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Publication number Priority date Publication date Assignee Title
CN101264546A (en) * 2008-05-09 2008-09-17 北京工业大学 High-frequency inversion arc-welding power supply main power system
CN101588126A (en) * 2009-06-24 2009-11-25 哈尔滨工业大学 The ZVZCS three-level DC-DC converter of wide load characteristic
CN101728964A (en) * 2010-01-12 2010-06-09 浙江大学 Bridgeless power factor correction converter with single inductance and three levels
CN102624243A (en) * 2012-04-19 2012-08-01 中国矿业大学(北京) Isolation-type half-bridge three-level dual-direction direct-current/direct-current (DC/DC) converter
CN102629836A (en) * 2012-04-23 2012-08-08 山东大学 Novel two-stage alternating-current photovoltaic module
US9172301B2 (en) * 2013-05-07 2015-10-27 Hamilton Sundstrand Corporation Synchronous rectification in the three-level inverter-converter topologies
CN106936327A (en) * 2015-12-29 2017-07-07 通用电气公司 Hybrid converter system
CN106817032A (en) * 2017-03-24 2017-06-09 合肥博鳌电气科技有限公司 A kind of neutral balance circuit and control method for half-bridge three-level direct current converter

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110086360A (en) * 2019-04-22 2019-08-02 浙江大学 A kind of five level high efficiency rectifiers
CN112865560A (en) * 2021-01-28 2021-05-28 三峡大学 Multi-diode series back-to-back bridgeless three-level rectifier
CN112865561A (en) * 2021-01-28 2021-05-28 三峡大学 Diode clamping type back-to-back bridgeless three-level rectifier
CN112865560B (en) * 2021-01-28 2022-05-03 三峡大学 Multi-diode series back-to-back bridgeless three-level rectifier

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