CN102447396A - Transformer with high set-up ratio, solar inverter and solar battery system - Google Patents

Transformer with high set-up ratio, solar inverter and solar battery system Download PDF

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Publication number
CN102447396A
CN102447396A CN2012100039638A CN201210003963A CN102447396A CN 102447396 A CN102447396 A CN 102447396A CN 2012100039638 A CN2012100039638 A CN 2012100039638A CN 201210003963 A CN201210003963 A CN 201210003963A CN 102447396 A CN102447396 A CN 102447396A
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China
Prior art keywords
semiconductor switch
power semiconductor
high step
diode
transformer secondary
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CN2012100039638A
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Chinese (zh)
Inventor
梁志刚
郑崇峰
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Leadsolar Energy Co Ltd
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Leadsolar Energy Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/56—Power conversion systems, e.g. maximum power point trackers

Abstract

The invention discloses a transformer with a high set-up ratio, a solar inverter and a solar battery system. According to the invention, the low output voltages of power sources are converted to high output voltages through the transformer with the high set-up ratio; and according to the specific application and different control methods, the outputs of the transformer with the high set-up ratio from a first technical scheme to a fourth technical scheme can be standard direct current voltages or controlled and modulated specific voltage wave forms. By using the transformer with the high set-up ratio, the solar inverter and the solar battery system, the defects of small set-up ratio, long transmission path, large additional loss, low energy conversion efficiency and the like in the prior art can be overcome, so as to realize the advantages of large set-up ratio, short transmission path, small additional loss and high energy conversion efficiency.

Description

High step-up ratio converter, solar inverter and solar cell system
Technical field
The present invention relates to booster circuit and solar grid-connected technical field of power generation, particularly, relate to high step-up ratio converter, solar inverter and solar cell system.
Background technology
In in recent years, be master's renewable energy system with wind energy and solar energy, obtain increasing application at world wide.For solar grid-connected electricity generation system; Except the centralized big-power solar power station that accounts for main flow at present; The distributed solar energy grid-connected system; Because it can optimize the operating state of solar panel, can improve the annual energy output of system as a rule, obtain day by day at present paying attention to and become one studying focus.
Wherein, particularly noticeable based on the distributed generation system of the little inverter of solar energy, and be used widely in the U.S..The core of the little inverter of solar energy is high efficiency booster circuit, inverter circuit and control technology thereof, and booster circuit mainly comprises the anti exciting converter and the circuit of deriving thereof.For the application of the little inverter of solar energy, the step-up ratio that it needs is very high.Such as; The general output voltage of 200W polysilicon solar cell plate at the maximum power point place is about 25V ~ 36V; When connecing the single-phase electrical network of 240V and generate electricity by way of merging two or more grid systems through little inverter, little inverter output voltage will reach about 340V, and the required voltage no-load voltage ratio is 13.6 to the maximum.
At present; Active-clamp anti exciting converter (previous art) is as a kind of anti exciting converter commonly used; Because the no-voltage that has higher step-up ratio and can realize the former limit of transformer switching tube is opened the advantage with the zero-current switching of secondary diode, is used widely in a lot of middle low power conversion occasions and solar power generation occasion.
In traditional active-clamp anti exciting converter, comprise the low side clamp anti exciting converter of Fig. 1 a demonstration and the high end clamp anti exciting converter that Fig. 1 b shows.
In Fig. 1 a and Fig. 1 b, switching tube
Figure 2012100039638100002DEST_PATH_IMAGE001
and
Figure 100186DEST_PATH_IMAGE002
complementation turn on and off.For the no-voltage that realizes
Figure 17326DEST_PATH_IMAGE001
open-minded; The inductance value of extra resonance inductance
Figure 2012100039638100002DEST_PATH_IMAGE003
is less, and
Figure 984014DEST_PATH_IMAGE003
can ignore in circuit steady-state analysis process.So can obtain the expression formula of the output voltage of active-clamp anti exciting converter be:
Figure 316906DEST_PATH_IMAGE004
（1）
In formula (1);
Figure 2012100039638100002DEST_PATH_IMAGE005
is output voltage;
Figure 819694DEST_PATH_IMAGE006
is input voltage; is the turn ratio on transformer secondary and former limit,
Figure 642156DEST_PATH_IMAGE008
be the duty ratio of switching tube
Figure 846873DEST_PATH_IMAGE001
.In Fig. 1 a and Fig. 1 b,
Figure 2012100039638100002DEST_PATH_IMAGE009
is clamping capacitance.In a switch periods, the energy of resonant inductance can partly or entirely be transferred in the resonant capacitance; When the secondary diode current flow, the portion of energy of clamping capacitance is delivered to the load of secondary through transformer.
But; In the traditional active clamp anti exciting converter, energy always offers load from input through transformer, needs the coupling through transformer; Increased in the transmission course because the excess loss that Power Conversion brings makes that the conversion efficiency of active-clamp anti exciting converter is low.Therefore, need research and development than the higher converter circuit of active-clamp anti exciting converter conversion efficiency.
In realizing process of the present invention, the inventor finds to exist at least in the prior art defectives such as step-up ratio is little, transmission path long, excess loss is big and energy conversion efficiency is low.
Summary of the invention
The objective of the invention is to,, propose a kind of high step-up ratio converter, to realize that step-up ratio is big, transmission path is short, excess loss is little and the high advantage of energy conversion efficiency to the problems referred to above.
For realizing above-mentioned purpose; First technical scheme that the present invention adopts is: a kind of high step-up ratio converter; Comprise direct-current input power supplying; Halfwave rectifier electric capacity ; Clamping capacitance
Figure 901602DEST_PATH_IMAGE009
; Transformer; The former limit of transformer magnetizing inductance
Figure 2012100039638100002DEST_PATH_IMAGE011
; Resonant inductance
Figure 832649DEST_PATH_IMAGE012
; Power semiconductor switch
Figure 272465DEST_PATH_IMAGE001
and
Figure 9476DEST_PATH_IMAGE002
; The body diode of
Figure 470545DEST_PATH_IMAGE001
and
Figure 900389DEST_PATH_IMAGE002
or extra parallel diode and
Figure 328965DEST_PATH_IMAGE014
; Output resistance
Figure 2012100039638100002DEST_PATH_IMAGE015
, and transformer secondary rectifier diode
Figure 541772DEST_PATH_IMAGE016
; Wherein:
The positive pole of said direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 185243DEST_PATH_IMAGE009
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of transformer secondary coil, transformer secondary rectifier diode
Figure 208825DEST_PATH_IMAGE016
, power semiconductor switch
Figure 937746DEST_PATH_IMAGE002
,
Figure 954244DEST_PATH_IMAGE002
or extra parallel diode
Figure 452221DEST_PATH_IMAGE014
and first link of output resistance
Figure 410819DEST_PATH_IMAGE015
; Successively behind the former limit of transformer magnetizing inductance
Figure 361457DEST_PATH_IMAGE011
and resonant inductance
Figure 181646DEST_PATH_IMAGE012
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 534130DEST_PATH_IMAGE002
,
Figure 168023DEST_PATH_IMAGE002
or extra parallel diode , power semiconductor switch
Figure 964258DEST_PATH_IMAGE001
and
Figure 436828DEST_PATH_IMAGE001
or extra parallel diode
Figure 737228DEST_PATH_IMAGE013
; And behind halfwave rectifier electric capacity
Figure 662458DEST_PATH_IMAGE010
, be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch
Figure 824450DEST_PATH_IMAGE001
,
Figure 885946DEST_PATH_IMAGE001
or extra parallel diode and second link of output resistance ;
The end of said transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance
Figure 236922DEST_PATH_IMAGE011
and resonant inductance ; The end of transformer secondary coil is connected with the anode of transformer secondary rectifier diode
Figure 795128DEST_PATH_IMAGE016
; The grid of power semiconductor switch
Figure 694951DEST_PATH_IMAGE001
is used for the pulse signal of input duty cycle for
Figure 198744DEST_PATH_IMAGE008
; The grid of power semiconductor switch
Figure 500413DEST_PATH_IMAGE002
is used for the pulse signal of input duty cycle for
Figure 2012100039638100002DEST_PATH_IMAGE017
.
Further; Above-described high step-up ratio converter also comprises transformer secondary filter capacitor
Figure 546473DEST_PATH_IMAGE018
; Said transformer secondary filter capacitor
Figure 871275DEST_PATH_IMAGE018
is connected between the negative electrode of top and transformer secondary rectifier diode
Figure 241076DEST_PATH_IMAGE016
of transformer secondary coil.
Further; Above-described high step-up ratio converter also comprises shunt capacitance
Figure DEST_PATH_IMAGE019
and
Figure 318623DEST_PATH_IMAGE020
; Said shunt capacitance
Figure 53360DEST_PATH_IMAGE019
is attempted by between the anode and negative electrode of the body diode of
Figure 662196DEST_PATH_IMAGE001
or extra parallel diode
Figure 835689DEST_PATH_IMAGE013
; Said shunt capacitance
Figure 534785DEST_PATH_IMAGE020
is attempted by between the anode and negative electrode of the body diode of
Figure 502741DEST_PATH_IMAGE002
or extra parallel diode
Figure 536557DEST_PATH_IMAGE014
.
Further, said direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV and storage battery at least;
Said power semiconductor switch
Figure 248161DEST_PATH_IMAGE001
and comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
Simultaneously; Second technical scheme that the present invention adopts is: a kind of high step-up ratio converter; Comprise direct-current input power supplying; Full-wave rectification electric capacity ; Clamping capacitance ; Transformer; The former limit of transformer magnetizing inductance
Figure 639894DEST_PATH_IMAGE011
; Resonant inductance
Figure 889610DEST_PATH_IMAGE012
; Power semiconductor switch and
Figure 122325DEST_PATH_IMAGE002
; The body diode of
Figure 193049DEST_PATH_IMAGE001
and
Figure 433407DEST_PATH_IMAGE002
or extra parallel diode
Figure 273187DEST_PATH_IMAGE013
and
Figure 691530DEST_PATH_IMAGE014
; Output resistance
Figure 983971DEST_PATH_IMAGE015
, and transformer secondary rectifier diode
Figure 529484DEST_PATH_IMAGE016
and ; Wherein:
The positive pole of said direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 813015DEST_PATH_IMAGE009
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of the anode of transformer secondary rectifier diode
Figure 858331DEST_PATH_IMAGE016
, transformer secondary coil, transformer secondary rectifier diode
Figure 440491DEST_PATH_IMAGE022
, power semiconductor switch
Figure 989284DEST_PATH_IMAGE002
,
Figure 15009DEST_PATH_IMAGE002
or extra parallel diode
Figure 282042DEST_PATH_IMAGE014
and first link of output resistance ; Successively behind the former limit of transformer magnetizing inductance
Figure 569728DEST_PATH_IMAGE011
and resonant inductance
Figure 766354DEST_PATH_IMAGE012
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 707634DEST_PATH_IMAGE002
,
Figure 444646DEST_PATH_IMAGE002
or extra parallel diode
Figure 905714DEST_PATH_IMAGE014
, power semiconductor switch and
Figure 20DEST_PATH_IMAGE001
or extra parallel diode
Figure 540723DEST_PATH_IMAGE013
; And behind full-wave rectification electric capacity
Figure 121877DEST_PATH_IMAGE021
, be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch
Figure 457043DEST_PATH_IMAGE001
,
Figure 372916DEST_PATH_IMAGE001
or extra parallel diode
Figure 451730DEST_PATH_IMAGE013
and second link of output resistance
Figure 887391DEST_PATH_IMAGE015
;
The end of said transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance and resonant inductance
Figure 609676DEST_PATH_IMAGE012
; The end of transformer secondary coil is connected with the negative electrode of transformer secondary rectifier diode and the anode of transformer secondary rectifier diode ; The grid of power semiconductor switch
Figure 416242DEST_PATH_IMAGE001
is used for the pulse signal of input duty cycle for
Figure 854176DEST_PATH_IMAGE008
; The grid of power semiconductor switch
Figure 461744DEST_PATH_IMAGE002
is used for the pulse signal of input duty cycle for
Figure 934314DEST_PATH_IMAGE017
.
Further; Above-described high step-up ratio converter also comprises transformer secondary filter capacitor
Figure DEST_PATH_IMAGE023
and
Figure 719867DEST_PATH_IMAGE024
; Said transformer secondary filter capacitor
Figure 333513DEST_PATH_IMAGE023
is connected between the anode of top and transformer secondary rectifier diode
Figure 557821DEST_PATH_IMAGE016
of transformer secondary coil; Said transformer secondary filter capacitor
Figure 822581DEST_PATH_IMAGE024
is connected between the negative electrode of top and transformer secondary rectifier diode
Figure 106931DEST_PATH_IMAGE022
of transformer secondary coil.
Further; Above-described high step-up ratio converter also comprises shunt capacitance
Figure 706409DEST_PATH_IMAGE019
and
Figure 468828DEST_PATH_IMAGE020
; Said shunt capacitance
Figure 588094DEST_PATH_IMAGE019
is attempted by between the anode and negative electrode of the body diode of or extra parallel diode
Figure 628655DEST_PATH_IMAGE013
; Said shunt capacitance
Figure 194766DEST_PATH_IMAGE020
is attempted by between the anode and negative electrode of the body diode of
Figure 168538DEST_PATH_IMAGE002
or extra parallel diode
Figure 794691DEST_PATH_IMAGE014
.
Further, above-described high step-up ratio converter, said direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV and storage battery at least;
Said power semiconductor switch and
Figure 472983DEST_PATH_IMAGE002
comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
Simultaneously; The 3rd technical scheme that the present invention adopts is: a kind of high step-up ratio converter; Comprise direct-current input power supplying; Halfwave rectifier electric capacity
Figure 629158DEST_PATH_IMAGE010
; Clamping capacitance
Figure 363896DEST_PATH_IMAGE009
; Transformer; The former limit of transformer magnetizing inductance
Figure 972732DEST_PATH_IMAGE011
; Resonant inductance
Figure 834640DEST_PATH_IMAGE012
; Power semiconductor switch
Figure 845321DEST_PATH_IMAGE001
and
Figure 750960DEST_PATH_IMAGE002
; The body diode of
Figure 847092DEST_PATH_IMAGE001
and
Figure 480067DEST_PATH_IMAGE002
or extra parallel diode
Figure 610835DEST_PATH_IMAGE013
and
Figure 687375DEST_PATH_IMAGE014
; Output resistance
Figure 270803DEST_PATH_IMAGE015
, and transformer secondary rectifier diode
Figure 223583DEST_PATH_IMAGE016
; Wherein:
The positive pole of said direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 208856DEST_PATH_IMAGE009
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of transformer secondary coil, transformer secondary rectifier diode
Figure 456298DEST_PATH_IMAGE016
, power semiconductor switch
Figure 527022DEST_PATH_IMAGE002
,
Figure 767380DEST_PATH_IMAGE002
or extra parallel diode
Figure 607160DEST_PATH_IMAGE014
and first link of output resistance ; Successively behind the former limit of transformer magnetizing inductance
Figure 317944DEST_PATH_IMAGE011
and resonant inductance
Figure 175041DEST_PATH_IMAGE012
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 557743DEST_PATH_IMAGE002
,
Figure 209304DEST_PATH_IMAGE002
or extra parallel diode
Figure 192304DEST_PATH_IMAGE014
, power semiconductor switch
Figure 587513DEST_PATH_IMAGE001
and or extra parallel diode
Figure 411299DEST_PATH_IMAGE013
; And behind halfwave rectifier electric capacity
Figure 616015DEST_PATH_IMAGE010
, be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch
Figure 549336DEST_PATH_IMAGE001
and
Figure 903701DEST_PATH_IMAGE001
or extra parallel diode
Figure 162644DEST_PATH_IMAGE013
;
The end of said transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance
Figure 589077DEST_PATH_IMAGE011
and resonant inductance
Figure 591668DEST_PATH_IMAGE012
; The end of transformer secondary coil is connected with the anode of transformer secondary rectifier diode
Figure 302004DEST_PATH_IMAGE016
; Second link of output resistance
Figure 466269DEST_PATH_IMAGE015
is connected with the positive pole of direct-current input power supplying; The grid of power semiconductor switch
Figure 645577DEST_PATH_IMAGE001
is used for the pulse signal of input duty cycle for
Figure 186280DEST_PATH_IMAGE008
; The grid of power semiconductor switch
Figure 252587DEST_PATH_IMAGE002
is used for the pulse signal of input duty cycle for
Figure 853333DEST_PATH_IMAGE017
.
Further; Above-described high step-up ratio converter also comprises transformer secondary filter capacitor ; Said transformer secondary filter capacitor
Figure 598752DEST_PATH_IMAGE018
is connected between the negative electrode of top and transformer secondary rectifier diode of transformer secondary coil.
Further; Above-described high step-up ratio converter also comprises shunt capacitance
Figure 789748DEST_PATH_IMAGE019
and
Figure 943649DEST_PATH_IMAGE020
; Said shunt capacitance
Figure 826154DEST_PATH_IMAGE019
is attempted by between the anode and negative electrode of the body diode of
Figure 178638DEST_PATH_IMAGE001
or extra parallel diode
Figure 546952DEST_PATH_IMAGE013
; Said shunt capacitance
Figure 984887DEST_PATH_IMAGE020
is attempted by between the anode and negative electrode of the body diode of
Figure 608766DEST_PATH_IMAGE002
or extra parallel diode
Figure 815757DEST_PATH_IMAGE014
.
Further, above-described high step-up ratio converter, said direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV and storage battery at least;
Said power semiconductor switch
Figure 116157DEST_PATH_IMAGE001
and
Figure 41388DEST_PATH_IMAGE002
comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
Simultaneously; The 4th technical scheme that the present invention adopts is: a kind of high step-up ratio converter; Comprise direct-current input power supplying; Full-wave rectification electric capacity
Figure 203379DEST_PATH_IMAGE021
; Clamping capacitance
Figure 530455DEST_PATH_IMAGE009
; Transformer; The former limit of transformer magnetizing inductance
Figure 503221DEST_PATH_IMAGE011
; Resonant inductance
Figure 650169DEST_PATH_IMAGE012
; Power semiconductor switch
Figure 615851DEST_PATH_IMAGE001
and
Figure 797433DEST_PATH_IMAGE002
; The body diode of
Figure 439636DEST_PATH_IMAGE001
and
Figure 339459DEST_PATH_IMAGE002
or extra parallel diode
Figure 843253DEST_PATH_IMAGE013
and
Figure 879342DEST_PATH_IMAGE014
; Output resistance
Figure 190981DEST_PATH_IMAGE015
, and transformer secondary rectifier diode
Figure 312521DEST_PATH_IMAGE016
and
Figure 620005DEST_PATH_IMAGE022
; Wherein:
The positive pole of said direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 776180DEST_PATH_IMAGE009
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of the anode of transformer secondary rectifier diode
Figure 573235DEST_PATH_IMAGE016
, transformer secondary coil, transformer secondary rectifier diode , power semiconductor switch
Figure 276935DEST_PATH_IMAGE002
, or extra parallel diode
Figure 193255DEST_PATH_IMAGE014
and first link of output resistance
Figure 977803DEST_PATH_IMAGE015
; Successively behind the former limit of transformer magnetizing inductance
Figure 689407DEST_PATH_IMAGE011
and resonant inductance
Figure 757857DEST_PATH_IMAGE012
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 896714DEST_PATH_IMAGE002
,
Figure 401514DEST_PATH_IMAGE002
or extra parallel diode
Figure 916809DEST_PATH_IMAGE014
, power semiconductor switch
Figure 839765DEST_PATH_IMAGE001
and or extra parallel diode
Figure 634295DEST_PATH_IMAGE013
; And behind full-wave rectification electric capacity
Figure 687702DEST_PATH_IMAGE021
, be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch
Figure 465165DEST_PATH_IMAGE001
and
Figure 945825DEST_PATH_IMAGE001
or extra parallel diode
Figure 690796DEST_PATH_IMAGE013
;
The end of said transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance
Figure 282314DEST_PATH_IMAGE011
and resonant inductance
Figure 179863DEST_PATH_IMAGE012
; The end of transformer secondary coil is connected with the negative electrode of transformer secondary rectifier diode
Figure 831424DEST_PATH_IMAGE016
and the anode of transformer secondary rectifier diode
Figure 299577DEST_PATH_IMAGE022
; Second link of output resistance
Figure 694786DEST_PATH_IMAGE015
is connected with the positive pole of direct-current input power supplying; The grid of power semiconductor switch
Figure 446842DEST_PATH_IMAGE001
is used for the pulse signal of input duty cycle for
Figure 269304DEST_PATH_IMAGE008
; The grid of power semiconductor switch
Figure 723288DEST_PATH_IMAGE002
is used for the pulse signal of input duty cycle for
Figure 922188DEST_PATH_IMAGE017
.
Further; Above-described high step-up ratio converter also comprises transformer secondary filter capacitor
Figure 528750DEST_PATH_IMAGE023
and
Figure 522114DEST_PATH_IMAGE024
; Said transformer secondary filter capacitor is connected between the anode of top and transformer secondary rectifier diode of transformer secondary coil; Said transformer secondary filter capacitor
Figure 425589DEST_PATH_IMAGE024
is connected between the negative electrode of top and transformer secondary rectifier diode of transformer secondary coil.
Further; Above-described high step-up ratio converter also comprises shunt capacitance
Figure 831479DEST_PATH_IMAGE019
and
Figure 559133DEST_PATH_IMAGE020
; Said shunt capacitance
Figure 937024DEST_PATH_IMAGE019
is attempted by between the anode and negative electrode of the body diode of
Figure 475453DEST_PATH_IMAGE001
or extra parallel diode ; Said shunt capacitance
Figure 971605DEST_PATH_IMAGE020
is attempted by between the anode and negative electrode of the body diode of
Figure 204003DEST_PATH_IMAGE002
or extra parallel diode
Figure 913333DEST_PATH_IMAGE014
.
Further, said direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV and storage battery at least;
Said power semiconductor switch
Figure 863971DEST_PATH_IMAGE001
and
Figure 933427DEST_PATH_IMAGE002
comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
Through such as the described high step-up ratio converter of above first to fourth technical scheme, can converting to than high output voltage some power sources than low output voltage; Different according to concrete application and control method, the output of the high step-up ratio converter of first to fourth technical scheme can be standard direct voltages or through the specific voltage waveform of control modulation.
When the described high step-up ratio converter of first to fourth technical scheme was output as direct voltage, its output can connect the input of corresponding load or conduct back level power inverter; When the described high step-up ratio converter of first to fourth technical scheme is output as specific voltage waveform (such as the steamed bun waveform); Its output can connect a switching-over bridge circuit that switches with mains frequency, changes output steamed bun waveform electrorheological into sinusoidal current and sends into electrical network.
Such as an important application of the described high step-up ratio converter of above first to fourth technical scheme, be the solar inverter that makes up the distributed solar grid-connected system.Below, the solar inverter based on the described high step-up ratio converter of above first to fourth technical scheme is illustrated through the 5th to the 8th technical scheme.
The 5th technical scheme that the present invention adopts is: a kind of solar inverter based on the described high step-up ratio converter of above first technical scheme; Comprise high step-up ratio converter, full-bridge inverting module, have the circuit control device of MPPT function and the voltage source
Figure DEST_PATH_IMAGE025
that is incorporated into the power networks, wherein:
The direct-current input power supplying of said high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 223594DEST_PATH_IMAGE025
is connected with the voltage source that is incorporated into the power networks; And output is incorporated into the power networks the effective value
Figure DEST_PATH_IMAGE027
of effective value
Figure 166143DEST_PATH_IMAGE026
and grid-connected current of voltage to the circuit control device that has MPPT maximum power point tracking (Maximum Power Point Tracking is called for short MPPT) function.
Further; Said full-bridge inverting module comprises power semiconductor switch
Figure 295422DEST_PATH_IMAGE028
,
Figure DEST_PATH_IMAGE029
,
Figure 919302DEST_PATH_IMAGE030
and
Figure DEST_PATH_IMAGE031
; First terminals of the output voltage of said high step-up ratio converter are connected with the drain electrode of power semiconductor switch
Figure 313243DEST_PATH_IMAGE028
and the drain electrode of power semiconductor switch ; Second terminals are connected with the source electrode of power semiconductor switch
Figure 289606DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 202330DEST_PATH_IMAGE031
;
The source electrode of said power semiconductor switch
Figure 529406DEST_PATH_IMAGE028
is connected with the drain electrode of power semiconductor switch
Figure 485860DEST_PATH_IMAGE029
; And behind the voltage source that is incorporated into the power networks
Figure 898387DEST_PATH_IMAGE025
, be connected with the source electrode of power semiconductor switch
Figure 113337DEST_PATH_IMAGE030
and the drain electrode of power semiconductor switch
Figure 294919DEST_PATH_IMAGE031
; The grid of the grid of power semiconductor switch
Figure 687855DEST_PATH_IMAGE028
, power semiconductor switch
Figure 322098DEST_PATH_IMAGE029
grid, power semiconductor switch
Figure 573695DEST_PATH_IMAGE030
and the grid of power semiconductor switch
Figure 875363DEST_PATH_IMAGE031
are control end.
Further; At the output of said high step-up ratio converter, and be connected to output filter capacitor
Figure 439200DEST_PATH_IMAGE032
; First link of said output filter capacitor
Figure 560739DEST_PATH_IMAGE032
is connected with the drain electrode of power semiconductor switch
Figure 117491DEST_PATH_IMAGE028
and the drain electrode of power semiconductor switch ; Second link is connected with the source electrode of power semiconductor switch
Figure 70721DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 617240DEST_PATH_IMAGE031
.
Further; Above-described solar inverter based on high step-up ratio converter; Also comprise output inductance
Figure DEST_PATH_IMAGE033
and ; Said output inductance
Figure 224250DEST_PATH_IMAGE033
is connected between the source electrode of power semiconductor switch and the voltage source that is incorporated into the power networks , and said output inductance
Figure 124576DEST_PATH_IMAGE034
is connected between the source electrode of power semiconductor switch
Figure 989764DEST_PATH_IMAGE030
and the voltage source that is incorporated into the power networks
Figure 66304DEST_PATH_IMAGE025
.
The 6th technical scheme that the present invention adopts is: a kind of solar inverter based on the described high step-up ratio converter of above second technical scheme; Comprise high step-up ratio converter, full-bridge inverting module, have the circuit control device of MPPT function and the voltage source
Figure 649732DEST_PATH_IMAGE025
that is incorporated into the power networks, wherein:
The direct-current input power supplying of said high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 868091DEST_PATH_IMAGE025
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 835227DEST_PATH_IMAGE027
of effective value
Figure 587785DEST_PATH_IMAGE026
and grid-connected current of voltage to the circuit control device that has the MPPT function.
Further; Said full-bridge inverting module comprises power semiconductor switch
Figure 905951DEST_PATH_IMAGE028
,
Figure 146309DEST_PATH_IMAGE029
,
Figure 986089DEST_PATH_IMAGE030
and
Figure 404432DEST_PATH_IMAGE031
; First terminals of the output voltage of said high step-up ratio converter are connected with the drain electrode of power semiconductor switch
Figure 962452DEST_PATH_IMAGE028
and the drain electrode of power semiconductor switch
Figure 242386DEST_PATH_IMAGE030
; Second terminals are connected with the source electrode of power semiconductor switch
Figure 936672DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 853813DEST_PATH_IMAGE031
;
The source electrode of said power semiconductor switch
Figure 571233DEST_PATH_IMAGE028
is connected with the drain electrode of power semiconductor switch
Figure 966442DEST_PATH_IMAGE029
; And behind the voltage source that is incorporated into the power networks
Figure 967765DEST_PATH_IMAGE025
, be connected with the source electrode of power semiconductor switch
Figure 790228DEST_PATH_IMAGE030
and the drain electrode of power semiconductor switch
Figure 994944DEST_PATH_IMAGE031
; The grid of the grid of power semiconductor switch
Figure 193844DEST_PATH_IMAGE028
, power semiconductor switch
Figure 548209DEST_PATH_IMAGE029
grid, power semiconductor switch
Figure 541573DEST_PATH_IMAGE030
and the grid of power semiconductor switch
Figure 233585DEST_PATH_IMAGE031
are control end.
Further; At the output of said high step-up ratio converter, and be connected to output filter capacitor
Figure 970597DEST_PATH_IMAGE032
; First link of said output filter capacitor
Figure 680933DEST_PATH_IMAGE032
is connected with the drain electrode of power semiconductor switch
Figure 110777DEST_PATH_IMAGE028
and the drain electrode of power semiconductor switch ; Second link is connected with the source electrode of power semiconductor switch
Figure 565209DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 897096DEST_PATH_IMAGE031
.
Further; Above-described solar inverter based on high step-up ratio converter; Also comprise output inductance and
Figure 961184DEST_PATH_IMAGE034
; Said output inductance
Figure 977681DEST_PATH_IMAGE033
is connected between the source electrode of power semiconductor switch
Figure 475659DEST_PATH_IMAGE028
and the voltage source that is incorporated into the power networks
Figure 434256DEST_PATH_IMAGE025
, and said output inductance
Figure 384895DEST_PATH_IMAGE034
is connected between the source electrode of power semiconductor switch and the voltage source that is incorporated into the power networks
Figure 557567DEST_PATH_IMAGE025
.
The 7th technical scheme that the present invention adopts is: a kind of solar inverter based on above technical scheme three described high step-up ratio converters; Comprise high step-up ratio converter, full-bridge inverting module, have the circuit control device of MPPT function and the voltage source
Figure 191461DEST_PATH_IMAGE025
that is incorporated into the power networks, wherein:
The direct-current input power supplying of said high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 629395DEST_PATH_IMAGE025
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 460265DEST_PATH_IMAGE027
of effective value
Figure 987695DEST_PATH_IMAGE026
and grid-connected current of voltage to the circuit control device that has the MPPT function.
Further; Said full-bridge inverting module; Comprise thyristor
Figure 760665DEST_PATH_IMAGE028
and
Figure 685896DEST_PATH_IMAGE030
, and power semiconductor switch
Figure 847887DEST_PATH_IMAGE029
and
Figure 909384DEST_PATH_IMAGE031
;
First terminals of the output voltage of said high step-up ratio converter are connected with the anode of thyristor
Figure 882150DEST_PATH_IMAGE028
and the anode of thyristor
Figure 294677DEST_PATH_IMAGE030
; Second terminals are connected with the source electrode of power semiconductor switch
Figure 260359DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 441942DEST_PATH_IMAGE031
;
The negative electrode of said thyristor is connected with the drain electrode of power semiconductor switch
Figure 718388DEST_PATH_IMAGE029
; And behind the voltage source that is incorporated into the power networks
Figure 222182DEST_PATH_IMAGE025
, be connected with the negative electrode of thyristor
Figure 523850DEST_PATH_IMAGE030
and the drain electrode of power semiconductor switch ; The control utmost point of the control utmost point of thyristor
Figure 957029DEST_PATH_IMAGE028
, power semiconductor switch
Figure 264514DEST_PATH_IMAGE029
grid, thyristor
Figure 155109DEST_PATH_IMAGE030
and the grid of power semiconductor switch
Figure 139115DEST_PATH_IMAGE031
are control end.
Further; Above-described solar inverter based on high step-up ratio converter; It is characterized in that; Also comprise output inductance
Figure 747951DEST_PATH_IMAGE033
and
Figure 859126DEST_PATH_IMAGE034
; Said output inductance
Figure 869807DEST_PATH_IMAGE033
is connected between the source electrode of power semiconductor switch
Figure 526179DEST_PATH_IMAGE028
and the voltage source that is incorporated into the power networks
Figure 622311DEST_PATH_IMAGE025
, and said output inductance
Figure 271598DEST_PATH_IMAGE034
is connected between the source electrode of power semiconductor switch
Figure 136786DEST_PATH_IMAGE030
and the voltage source that is incorporated into the power networks
Figure 462594DEST_PATH_IMAGE025
.
The 8th technical scheme that the present invention adopts is: a kind of solar inverter based on the described high step-up ratio converter of above the 4th technical scheme; Comprise high step-up ratio converter, full-bridge inverting module, have the circuit control device of MPPT function and the voltage source
Figure 46022DEST_PATH_IMAGE025
that is incorporated into the power networks, wherein:
The direct-current input power supplying of said high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 233421DEST_PATH_IMAGE025
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 208079DEST_PATH_IMAGE027
of effective value and grid-connected current of voltage to the circuit control device that has the MPPT function.
Further; Said full-bridge inverting module; Comprise thyristor and
Figure 278804DEST_PATH_IMAGE030
, and power semiconductor switch
Figure 269893DEST_PATH_IMAGE029
and
Figure 109673DEST_PATH_IMAGE031
;
First terminals of the output voltage of said high step-up ratio converter are connected with the anode of thyristor and the anode of thyristor
Figure 69725DEST_PATH_IMAGE030
; Second terminals are connected with the source electrode of power semiconductor switch and the source electrode of power semiconductor switch
Figure 558792DEST_PATH_IMAGE031
;
The negative electrode of said thyristor
Figure 898769DEST_PATH_IMAGE028
is connected with the drain electrode of power semiconductor switch
Figure 944085DEST_PATH_IMAGE029
; And behind the voltage source that is incorporated into the power networks
Figure 276978DEST_PATH_IMAGE025
, be connected with the negative electrode of thyristor
Figure 825771DEST_PATH_IMAGE030
and the drain electrode of power semiconductor switch ; The control utmost point of the control utmost point of thyristor, power semiconductor switch
Figure 367796DEST_PATH_IMAGE029
grid, thyristor and the grid of power semiconductor switch
Figure 907679DEST_PATH_IMAGE031
are control end.
Further; Above-described solar inverter based on high step-up ratio converter; Also comprise output inductance and
Figure 606438DEST_PATH_IMAGE034
; Said output inductance is connected between the source electrode of power semiconductor switch and the voltage source that is incorporated into the power networks
Figure 804518DEST_PATH_IMAGE025
, and said output inductance
Figure 421313DEST_PATH_IMAGE034
is connected between the source electrode of power semiconductor switch
Figure 397359DEST_PATH_IMAGE030
and the voltage source that is incorporated into the power networks
Figure 875745DEST_PATH_IMAGE025
.
Simultaneously; The technical scheme again that the present invention adopts is: a kind of solar cell system based on the described high step-up ratio converter of above first to fourth technical scheme; At least comprise TRT, inverter and electrical network and/or electric equipment, said TRT, inverter and electrical network and/or electric equipment connect successively; The voltage and the electric current of said TRT output after inverter is handled, are supplied with electrical network and/or electric equipment.
Further, said inverter comprises high step-up ratio converter, control circuit, accessory power supply and communication module at least; Wherein:
Said control circuit and accessory power supply are connected with high step-up ratio converter and communication module respectively; The voltage and the electric current of TRT output after high step-up ratio converter is handled, are supplied with electrical network and/or electric equipment and are connected.
Further, above-described solar cell system based on high step-up ratio converter at least also comprises communication gate, computer server and monitoring and administrative center; Said communication module, communication gate, computer server and monitoring and administrative center connect successively.
Further, said TRT comprises parallel wind power generation plant and the device of solar generating that is provided with at least.
In addition; Such as the described high step-up ratio converter of above first to fourth technical scheme; Except can be used for such as above the 5th to the 8th technical scheme described based on high step-up ratio converter solar inverter and be used for aforesaid solar cell system based on high step-up ratio converter; The DC input voitage of solar panel, electric current, convert the suitable voltage and current that is incorporated into the power networks to, realize outside the corresponding D C/AC conversion; Also can be used for the DC/DC power conversion of the high step-up ratio of other needs, convert lower input voltage to higher output voltage.
High step-up ratio converter, solar inverter and the solar cell system of various embodiments of the present invention, wherein, high step-up ratio converter is based on the novel high step-up ratio converter that traditional active clamp anti exciting converter proposes; In this type of high step-up ratio converter, when keeping the soft switch advantage of former active clamp anti exciting converter, also has higher step-up ratio; Simultaneously, the energy transfer way of this type of high step-up ratio converter compare with traditional active-clamp anti exciting converter also have different; In addition; In this type of high step-up ratio converter; Portion of energy directly offers load through solar panel and clamping capacitance; Need not coupling, reduced in the transmission course because the excess loss that Power Conversion brings has the conversion efficiency higher than active-clamp anti exciting converter in essence through transformer; Step-up ratio is little in the prior art, transmission path long, excess loss is big and the low defective of energy conversion efficiency thereby can overcome, to realize that step-up ratio is big, transmission path is short, excess loss is little and the high advantage of energy conversion efficiency.
Other features and advantages of the present invention will be set forth in specification subsequently, and, partly from specification, become obvious, perhaps understand through embodiment of the present invention.The object of the invention can be realized through the structure that in the specification of being write, claims and accompanying drawing, is particularly pointed out and obtained with other advantages.
Through accompanying drawing and embodiment, technical scheme of the present invention is done further detailed description below.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used to explain the present invention with embodiments of the invention, is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 a is the operation principle sketch map of traditional low-side clamp anti exciting converter;
Fig. 1 b is the operation principle sketch map of traditional high end clamp anti exciting converter;
Fig. 2 is the simulation waveform sketch map of traditional high end clamp anti exciting converter;
Fig. 3 a is the operation principle sketch map of the high step-up ratio converter embodiment one according to the present invention;
Fig. 3 b is the operation principle sketch map of the high step-up ratio converter embodiment two according to the present invention;
Fig. 3 c is the operation principle sketch map of the high step-up ratio converter embodiment three according to the present invention;
Fig. 3 d is the operation principle sketch map of the high step-up ratio converter embodiment four according to the present invention;
Fig. 4 is the comparison curves of the duty ratio-step-up ratio of the high step-up ratio converter of the present invention and traditional active-clamp anti exciting converter;
Fig. 5 a the present invention is based on the operation principle sketch map of the solar inverter embodiment one of high step-up ratio converter for basis;
Fig. 5 b the present invention is based on the operation principle sketch map of the solar inverter embodiment two of high step-up ratio converter for basis;
Fig. 5 c the present invention is based on the operation principle sketch map of the solar inverter embodiment three of high step-up ratio converter for basis;
Fig. 5 d the present invention is based on the operation principle sketch map of the solar inverter embodiment four of high step-up ratio converter for basis;
Fig. 6 the present invention is based on the operation principle sketch map of the solar cell system embodiment of high step-up ratio converter for basis.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described, should be appreciated that preferred embodiment described herein only is used for explanation and explains the present invention, and be not used in qualification the present invention.
High step-up ratio converter embodiment
Embodiment one
According to the embodiment of the invention, a kind of high step-up ratio converter is provided.Shown in Fig. 3 a; Present embodiment comprises direct-current input power supplying; Halfwave rectifier electric capacity
Figure 519216DEST_PATH_IMAGE010
; Clamping capacitance
Figure 542798DEST_PATH_IMAGE009
; Transformer; The former limit of transformer magnetizing inductance
Figure 271719DEST_PATH_IMAGE011
; Resonant inductance ; Power semiconductor switch
Figure 786194DEST_PATH_IMAGE001
and
Figure 292262DEST_PATH_IMAGE002
; The body diode of
Figure 695430DEST_PATH_IMAGE001
or extra parallel diode and
Figure 868103DEST_PATH_IMAGE014
; Output resistance
Figure 810651DEST_PATH_IMAGE015
; Transformer secondary rectifier diode
Figure 939931DEST_PATH_IMAGE016
; Transformer secondary filter capacitor
Figure 360548DEST_PATH_IMAGE018
, and shunt capacitance
Figure 770801DEST_PATH_IMAGE019
and
Figure 618671DEST_PATH_IMAGE020
.
Wherein, the positive pole of above-mentioned direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 730852DEST_PATH_IMAGE009
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of transformer secondary coil, transformer secondary rectifier diode
Figure 955160DEST_PATH_IMAGE016
, power semiconductor switch ,
Figure 504270DEST_PATH_IMAGE002
or extra parallel diode
Figure 605213DEST_PATH_IMAGE014
and first link of output resistance
Figure 367632DEST_PATH_IMAGE015
; Successively behind the former limit of transformer magnetizing inductance and resonant inductance
Figure 942150DEST_PATH_IMAGE012
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 28924DEST_PATH_IMAGE002
,
Figure 595034DEST_PATH_IMAGE002
or extra parallel diode, power semiconductor switch
Figure 568806DEST_PATH_IMAGE001
and
Figure 194960DEST_PATH_IMAGE001
or extra parallel diode
Figure 582079DEST_PATH_IMAGE013
; And behind halfwave rectifier electric capacity
Figure 371787DEST_PATH_IMAGE010
, be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch
Figure 527962DEST_PATH_IMAGE001
,
Figure 262699DEST_PATH_IMAGE001
or extra parallel diode
Figure 871535DEST_PATH_IMAGE013
and second link of output resistance
Figure 231978DEST_PATH_IMAGE015
.
The end of above-mentioned transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance
Figure 242660DEST_PATH_IMAGE011
and resonant inductance
Figure 148299DEST_PATH_IMAGE012
; The end of transformer secondary coil is connected with the anode of transformer secondary rectifier diode
Figure 244431DEST_PATH_IMAGE016
; The grid of power semiconductor switch
Figure 378871DEST_PATH_IMAGE001
is used for the pulse signal of input duty cycle for
Figure 509638DEST_PATH_IMAGE008
; The grid of power semiconductor switch
Figure 586179DEST_PATH_IMAGE002
is used for the pulse signal of input duty cycle for
Figure 169607DEST_PATH_IMAGE017
.
Above-mentioned transformer secondary filter capacitor
Figure 606273DEST_PATH_IMAGE018
is connected between the negative electrode of top and transformer secondary rectifier diode
Figure 591547DEST_PATH_IMAGE016
of transformer secondary coil.Shunt capacitance
Figure 838988DEST_PATH_IMAGE019
is attempted by between the anode and negative electrode of the body diode of or extra parallel diode
Figure 963119DEST_PATH_IMAGE013
; Shunt capacitance
Figure 505963DEST_PATH_IMAGE020
is attempted by between the anode and negative electrode of the body diode of
Figure 986623DEST_PATH_IMAGE002
or extra parallel diode .
Particularly, in the above-described embodiments, direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV and storage battery at least; Power semiconductor switch
Figure 73845DEST_PATH_IMAGE001
and
Figure 955082DEST_PATH_IMAGE002
comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
Embodiment two
According to the embodiment of the invention, a kind of high step-up ratio converter is provided.Shown in Fig. 3 b; Present embodiment comprises direct-current input power supplying; Full-wave rectification electric capacity
Figure 606643DEST_PATH_IMAGE021
; Clamping capacitance ; Transformer; The former limit of transformer magnetizing inductance
Figure 984852DEST_PATH_IMAGE011
; Resonant inductance
Figure 222061DEST_PATH_IMAGE012
; Power semiconductor switch
Figure 310102DEST_PATH_IMAGE001
and
Figure 514819DEST_PATH_IMAGE002
; The body diode of
Figure 448140DEST_PATH_IMAGE001
and
Figure 303969DEST_PATH_IMAGE002
or extra parallel diode
Figure 562912DEST_PATH_IMAGE013
and
Figure 989345DEST_PATH_IMAGE014
; Output resistance
Figure 991936DEST_PATH_IMAGE015
; Transformer secondary rectifier diode
Figure 200808DEST_PATH_IMAGE016
and
Figure 365073DEST_PATH_IMAGE022
; Transformer secondary filter capacitor
Figure 606698DEST_PATH_IMAGE023
and
Figure 85084DEST_PATH_IMAGE024
, and shunt capacitance
Figure 462976DEST_PATH_IMAGE019
and
Figure 250672DEST_PATH_IMAGE020
.
Wherein, the positive pole of above-mentioned direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 714014DEST_PATH_IMAGE009
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of the anode of transformer secondary rectifier diode
Figure 996091DEST_PATH_IMAGE016
, transformer secondary coil, transformer secondary rectifier diode
Figure 494069DEST_PATH_IMAGE022
, power semiconductor switch
Figure 688552DEST_PATH_IMAGE002
, or extra parallel diode
Figure 724958DEST_PATH_IMAGE014
and first link of output resistance
Figure 264393DEST_PATH_IMAGE015
; Successively behind the former limit of transformer magnetizing inductance
Figure 941362DEST_PATH_IMAGE011
and resonant inductance
Figure 316979DEST_PATH_IMAGE012
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 3175DEST_PATH_IMAGE002
,
Figure 901511DEST_PATH_IMAGE002
or extra parallel diode
Figure 14961DEST_PATH_IMAGE014
, power semiconductor switch and
Figure 915232DEST_PATH_IMAGE001
or extra parallel diode
Figure 242308DEST_PATH_IMAGE013
; And behind full-wave rectification electric capacity
Figure 651292DEST_PATH_IMAGE021
, be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch ,
Figure 763922DEST_PATH_IMAGE001
or extra parallel diode
Figure 945505DEST_PATH_IMAGE013
and second link of output resistance
Figure 899292DEST_PATH_IMAGE015
.
The end of above-mentioned transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance
Figure 416424DEST_PATH_IMAGE011
and resonant inductance ; The end of transformer secondary coil is connected with the negative electrode of transformer secondary rectifier diode
Figure 205575DEST_PATH_IMAGE016
and the anode of transformer secondary rectifier diode
Figure 831728DEST_PATH_IMAGE022
; The grid of power semiconductor switch is used for the pulse signal of input duty cycle for
Figure 890951DEST_PATH_IMAGE008
; The grid of power semiconductor switch
Figure 949168DEST_PATH_IMAGE002
is used for the pulse signal of input duty cycle for
Figure 105343DEST_PATH_IMAGE017
.
Above-mentioned transformer secondary filter capacitor
Figure 840081DEST_PATH_IMAGE023
is connected between the anode of top and transformer secondary rectifier diode
Figure 448916DEST_PATH_IMAGE016
of transformer secondary coil; Transformer secondary filter capacitor
Figure 356830DEST_PATH_IMAGE024
is connected between the negative electrode of top and transformer secondary rectifier diode
Figure 554462DEST_PATH_IMAGE022
of transformer secondary coil.
Above-mentioned shunt capacitance
Figure 522418DEST_PATH_IMAGE019
is attempted by between the anode and negative electrode of the body diode of or extra parallel diode
Figure 267837DEST_PATH_IMAGE013
; Shunt capacitance
Figure 84090DEST_PATH_IMAGE020
is attempted by between the anode and negative electrode of the body diode of
Figure 222947DEST_PATH_IMAGE002
or extra parallel diode
Figure 478479DEST_PATH_IMAGE014
.
Particularly, direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV and storage battery at least in the above-described embodiments; Power semiconductor switch
Figure 993774DEST_PATH_IMAGE001
and comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
Embodiment three
According to the embodiment of the invention, a kind of high step-up ratio converter is provided.Shown in Fig. 3 c; Present embodiment comprises direct-current input power supplying; Halfwave rectifier electric capacity
Figure 475757DEST_PATH_IMAGE010
; Clamping capacitance
Figure 218585DEST_PATH_IMAGE009
; Transformer; The former limit of transformer magnetizing inductance ; Resonant inductance
Figure 800187DEST_PATH_IMAGE012
; Power semiconductor switch
Figure 280847DEST_PATH_IMAGE001
and
Figure 776550DEST_PATH_IMAGE002
; The body diode of
Figure 368069DEST_PATH_IMAGE001
and or extra parallel diode and
Figure 946184DEST_PATH_IMAGE014
; Output resistance
Figure 279076DEST_PATH_IMAGE015
; And transformer secondary rectifier diode
Figure 93448DEST_PATH_IMAGE016
; Transformer secondary filter capacitor
Figure 607256DEST_PATH_IMAGE018
, and shunt capacitance
Figure 874289DEST_PATH_IMAGE019
and .
Wherein, the positive pole of above-mentioned direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance , be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of transformer secondary coil, transformer secondary rectifier diode
Figure 860066DEST_PATH_IMAGE016
, power semiconductor switch ,
Figure 554669DEST_PATH_IMAGE002
or extra parallel diode
Figure 78054DEST_PATH_IMAGE014
and first link of output resistance
Figure 930735DEST_PATH_IMAGE015
; Successively behind the former limit of transformer magnetizing inductance
Figure 172360DEST_PATH_IMAGE011
and resonant inductance
Figure 650746DEST_PATH_IMAGE012
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 28638DEST_PATH_IMAGE002
,
Figure 816334DEST_PATH_IMAGE002
or extra parallel diode
Figure 279677DEST_PATH_IMAGE014
, power semiconductor switch
Figure 561754DEST_PATH_IMAGE001
and
Figure 794152DEST_PATH_IMAGE001
or extra parallel diode
Figure 251284DEST_PATH_IMAGE013
; And behind halfwave rectifier electric capacity , be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch
Figure 22111DEST_PATH_IMAGE001
and
Figure 374595DEST_PATH_IMAGE001
or extra parallel diode
Figure 504094DEST_PATH_IMAGE013
.
The end of above-mentioned transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance and resonant inductance ; The end of transformer secondary coil is connected with the anode of transformer secondary rectifier diode
Figure 772899DEST_PATH_IMAGE016
; Second link of output resistance
Figure 574764DEST_PATH_IMAGE015
is connected with the positive pole of direct-current input power supplying; The grid of power semiconductor switch
Figure 499994DEST_PATH_IMAGE001
is used for the pulse signal of input duty cycle for ; The grid of power semiconductor switch
Figure 176012DEST_PATH_IMAGE002
is used for the pulse signal of input duty cycle for
Figure 194784DEST_PATH_IMAGE017
.
Above-mentioned transformer secondary filter capacitor is connected between the negative electrode of top and transformer secondary rectifier diode
Figure 572993DEST_PATH_IMAGE016
of transformer secondary coil.Shunt capacitance
Figure 457639DEST_PATH_IMAGE019
is attempted by between the anode and negative electrode of the body diode of
Figure 912891DEST_PATH_IMAGE001
or extra parallel diode
Figure 484818DEST_PATH_IMAGE013
; Shunt capacitance
Figure 50929DEST_PATH_IMAGE020
is attempted by between the anode and negative electrode of the body diode of
Figure 352597DEST_PATH_IMAGE002
or extra parallel diode .
Particularly, in the above-described embodiments, direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV and storage battery at least; Power semiconductor switch
Figure 287241DEST_PATH_IMAGE001
and
Figure 594725DEST_PATH_IMAGE002
comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
Embodiment four
According to the embodiment of the invention, a kind of high step-up ratio converter is provided.Shown in Fig. 3 d; Present embodiment comprises direct-current input power supplying; Full-wave rectification electric capacity
Figure 750900DEST_PATH_IMAGE021
; Clamping capacitance
Figure 236370DEST_PATH_IMAGE009
; Transformer; The former limit of transformer magnetizing inductance
Figure 845206DEST_PATH_IMAGE011
; Resonant inductance
Figure 690803DEST_PATH_IMAGE012
; Power semiconductor switch
Figure 701484DEST_PATH_IMAGE001
and
Figure 856391DEST_PATH_IMAGE002
; The body diode of and
Figure 601810DEST_PATH_IMAGE002
or extra parallel diode and
Figure 291341DEST_PATH_IMAGE014
; Output resistance
Figure 874769DEST_PATH_IMAGE015
; Transformer secondary rectifier diode
Figure 327747DEST_PATH_IMAGE016
and
Figure 47441DEST_PATH_IMAGE022
; Transformer secondary filter capacitor
Figure 544150DEST_PATH_IMAGE023
and
Figure 614875DEST_PATH_IMAGE024
, and shunt capacitance and
Figure 445744DEST_PATH_IMAGE020
.
Wherein, the positive pole of above-mentioned direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 614820DEST_PATH_IMAGE009
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of the anode of transformer secondary rectifier diode
Figure 172840DEST_PATH_IMAGE016
, transformer secondary coil, transformer secondary rectifier diode
Figure 702042DEST_PATH_IMAGE022
, power semiconductor switch
Figure 396328DEST_PATH_IMAGE002
,
Figure 313469DEST_PATH_IMAGE002
or extra parallel diode
Figure 280156DEST_PATH_IMAGE014
and first link of output resistance
Figure 675366DEST_PATH_IMAGE015
; Successively behind the former limit of transformer magnetizing inductance
Figure 427421DEST_PATH_IMAGE011
and resonant inductance
Figure 249884DEST_PATH_IMAGE012
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 208262DEST_PATH_IMAGE002
, or extra parallel diode
Figure 13724DEST_PATH_IMAGE014
, power semiconductor switch and or extra parallel diode
Figure 249161DEST_PATH_IMAGE013
; And behind full-wave rectification electric capacity
Figure 772547DEST_PATH_IMAGE021
, be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch
Figure 389342DEST_PATH_IMAGE001
and
Figure 568650DEST_PATH_IMAGE001
or extra parallel diode
Figure 843774DEST_PATH_IMAGE013
.
The end of above-mentioned transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance and resonant inductance
Figure 507897DEST_PATH_IMAGE012
; The end of transformer secondary coil is connected with the negative electrode of transformer secondary rectifier diode
Figure 174502DEST_PATH_IMAGE016
and the anode of transformer secondary rectifier diode ; Second link of output resistance
Figure 938244DEST_PATH_IMAGE015
is connected with the positive pole of direct-current input power supplying; The grid of power semiconductor switch
Figure 647574DEST_PATH_IMAGE001
is used for the pulse signal of input duty cycle for
Figure 966255DEST_PATH_IMAGE008
; The grid of power semiconductor switch
Figure 848760DEST_PATH_IMAGE002
is used for the pulse signal of input duty cycle for
Figure 388195DEST_PATH_IMAGE017
.
Above-mentioned transformer secondary filter capacitor
Figure 330743DEST_PATH_IMAGE023
is connected between the anode of top and transformer secondary rectifier diode of transformer secondary coil; Transformer secondary filter capacitor
Figure 877710DEST_PATH_IMAGE024
is connected between the negative electrode of top and transformer secondary rectifier diode
Figure 350280DEST_PATH_IMAGE022
of transformer secondary coil.
Above-mentioned shunt capacitance
Figure 149215DEST_PATH_IMAGE019
is attempted by between the anode and negative electrode of the body diode of
Figure 12129DEST_PATH_IMAGE001
or extra parallel diode
Figure 423388DEST_PATH_IMAGE013
; Said shunt capacitance
Figure 484884DEST_PATH_IMAGE020
is attempted by between the anode and negative electrode of the body diode of
Figure 769235DEST_PATH_IMAGE002
or extra parallel diode
Figure 745544DEST_PATH_IMAGE014
.
Particularly, in the above-described embodiments, direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV and storage battery at least; Power semiconductor switch and
Figure 142076DEST_PATH_IMAGE002
comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
Fig. 4 can show the comparison curves of the duty ratio-step-up ratio of corresponding high step-up ratio converter and classical inverse exciting converter among the above-mentioned high step-up ratio converter embodiment one to embodiment three (being Fig. 3 a-Fig. 3 d).Particularly, in Fig. 4, the comparison curves of the high step-up ratio converter that A presentation graphs 3b shows and the duty ratio-step-up ratio of classical inverse exciting converter; The comparison curves of the high step-up ratio converter that B presentation graphs 3d shows and the duty ratio-step-up ratio of classical inverse exciting converter; The comparison curves of the high step-up ratio converter that C presentation graphs 3a shows and the duty ratio-step-up ratio of classical inverse exciting converter; The comparison curves of the high step-up ratio converter that D presentation graphs 3c shows and the duty ratio-step-up ratio of classical inverse exciting converter; E representes the comparison curves of the duty ratio-step-up ratio of classical inverse exciting converter.
The foregoing description one to embodiment four shown in Fig. 3 a ~ Fig. 3 d has provided the serial high step-up ratio converter that the present invention proposes.Table 1 has been summed up the output voltage of these four kinds of high step-up ratio converters and the relational expression of input voltage.Fig. 4 has provided when transformer voltage ratio N=1, the curve that the step-up ratio of these four kinds of high step-up ratio converters changes along with duty ratio D, and done contrast with the step-up ratio curve of traditional active-clamp converter simultaneously.Can find out that the step-up ratio of these four kinds of high step-up ratio converters all is higher than traditional active clamp anti exciting converter.
Table 1: the step-up ratio relational expression of four kinds of high step-up ratio converters shown in Fig. 3 a ~ Fig. 3 d
Figure DEST_PATH_IMAGE035
In Fig. 3 a and Fig. 3 b, the total voltage of output is input voltage, the stack of clamping capacitance voltage and half-wave or full-wave rectification capacitance voltage.These two kinds high step-up ratio converters are applicable to the DC-to-dc conversion occasions that needs high step-up ratio, promptly convert the low dc voltage of input side to higher output voltage.As shown in table 1, contain irrelevant constant term in the output voltage expression formula of these two kinds of high step-up ratio converters with duty ratio D.When duty ratio D need modulate, output voltage need obtain the occasion of specific waveforms, and these two kinds high step-up ratio converters are not suitable for.
Therefore, the present invention proposes high step-up ratio converter shown in Fig. 3 c and Fig. 3 d.The difference of they and preceding two kinds of circuit is: removed the constant term with independent of duty cycle in the expression formula of output voltage; Output voltage only contains the relevant component with
Figure 269432DEST_PATH_IMAGE008
.So; The structure of these two kinds of high step-up ratio converters is suitable for duty ratio
Figure 169255DEST_PATH_IMAGE008
is carried out certain modulation; Output voltage is the application scenario of a specific waveforms; Such as, the little inverter of single-stage solar energy etc.
In these the four kinds high step-up ratio converters that the present invention proposes, the power switch pipe on the former limit of transformer
Figure 551344DEST_PATH_IMAGE001
and
Figure 853013DEST_PATH_IMAGE002
can be MOS memory MOSFET or insulated gate bipolar transistor npn npn IGBT.
Figure 151270DEST_PATH_IMAGE001
and
Figure 538389DEST_PATH_IMAGE002
complementary opening in the resonant inductor
Figure 596606DEST_PATH_IMAGE012
is large enough,
Figure 424885DEST_PATH_IMAGE001
and
Figure 221939DEST_PATH_IMAGE002
can achieve zero voltage (ZVS); transformer secondary side rectifier diode
Figure 17726DEST_PATH_IMAGE016
and
Figure 191218DEST_PATH_IMAGE022
can achieve zero current shutdown.Because these characteristics, these four kinds high step-up ratio converters can be realized high conversion rate.
Solar inverter embodiment
Embodiment one provides a kind of solar inverter based on high step-up ratio converter embodiment one according to the embodiment of the invention.Shown in Fig. 5 a; Present embodiment comprises high step-up ratio converter; The full-bridge inverting module; The circuit control device that has the MPPT function; Voltage source and output inductance and
Figure 889157DEST_PATH_IMAGE034
are incorporated into the power networks.
The direct-current input power supplying of above-mentioned high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 600761DEST_PATH_IMAGE025
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 542489DEST_PATH_IMAGE027
of effective value and grid-connected current of voltage to the circuit control device that has the MPPT function.
In the above-described embodiments; The full-bridge inverting module comprises power semiconductor switch
Figure 312868DEST_PATH_IMAGE028
,
Figure 562583DEST_PATH_IMAGE029
,
Figure 485540DEST_PATH_IMAGE030
and
Figure 795299DEST_PATH_IMAGE031
; First terminals of the output voltage of said high step-up ratio converter are connected with the drain electrode of power semiconductor switch
Figure 554438DEST_PATH_IMAGE028
and the drain electrode of power semiconductor switch
Figure 607845DEST_PATH_IMAGE030
; Second terminals are connected with the source electrode of power semiconductor switch
Figure 385308DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 865968DEST_PATH_IMAGE031
; The source electrode of power semiconductor switch is connected with the drain electrode of power semiconductor switch
Figure 202457DEST_PATH_IMAGE029
; And behind the voltage source that is incorporated into the power networks , be connected with the source electrode of power semiconductor switch
Figure 485988DEST_PATH_IMAGE030
and the drain electrode of power semiconductor switch
Figure 234369DEST_PATH_IMAGE031
; The grid of the grid of power semiconductor switch
Figure 629578DEST_PATH_IMAGE028
, power semiconductor switch
Figure 178371DEST_PATH_IMAGE029
grid, power semiconductor switch
Figure 204096DEST_PATH_IMAGE030
and the grid of power semiconductor switch are control end; Output inductance
Figure 856980DEST_PATH_IMAGE033
is connected between the source electrode of power semiconductor switch
Figure 260279DEST_PATH_IMAGE028
and the voltage source that is incorporated into the power networks
Figure 456905DEST_PATH_IMAGE025
, and output inductance
Figure 211235DEST_PATH_IMAGE034
is connected between the source electrode of power semiconductor switch
Figure 636662DEST_PATH_IMAGE030
and the voltage source that is incorporated into the power networks
Figure 160047DEST_PATH_IMAGE025
.
At the output of above-mentioned high step-up ratio converter, and be connected to output filter capacitor
Figure 527575DEST_PATH_IMAGE032
; First link of output filter capacitor is connected with the drain electrode of power semiconductor switch
Figure 231275DEST_PATH_IMAGE028
and the drain electrode of power semiconductor switch ; Second link is connected with the source electrode of power semiconductor switch
Figure 147595DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 876517DEST_PATH_IMAGE031
.
Embodiment two
According to the embodiment of the invention, a kind of solar inverter based on high step-up ratio converter embodiment two is provided.Shown in Fig. 5 b; Present embodiment comprises high step-up ratio converter; The full-bridge inverting module; The circuit control device that has the MPPT function; Voltage source and output inductance
Figure 138794DEST_PATH_IMAGE033
and
Figure 644862DEST_PATH_IMAGE034
are incorporated into the power networks.
Wherein, the direct-current input power supplying of above-mentioned high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 798763DEST_PATH_IMAGE025
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value of effective value and grid-connected current of voltage to the circuit control device that has the MPPT function; Output inductance
Figure 163251DEST_PATH_IMAGE033
is connected between the source electrode of power semiconductor switch
Figure 538869DEST_PATH_IMAGE028
and the voltage source that is incorporated into the power networks
Figure 959486DEST_PATH_IMAGE025
, and output inductance
Figure 120471DEST_PATH_IMAGE034
is connected between the source electrode of power semiconductor switch
Figure 968341DEST_PATH_IMAGE030
and the voltage source that is incorporated into the power networks .
Above-mentioned full-bridge inverting module comprises power semiconductor switch
Figure 55563DEST_PATH_IMAGE028
, , and
Figure 204150DEST_PATH_IMAGE031
; First terminals of the output voltage of high step-up ratio converter are connected with the drain electrode of power semiconductor switch and the drain electrode of power semiconductor switch
Figure 839498DEST_PATH_IMAGE030
; Second terminals are connected with the source electrode of power semiconductor switch
Figure 294750DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 319207DEST_PATH_IMAGE031
; The source electrode of power semiconductor switch
Figure 823000DEST_PATH_IMAGE028
is connected with the drain electrode of power semiconductor switch ; And behind the voltage source that is incorporated into the power networks
Figure 173658DEST_PATH_IMAGE025
, be connected with the source electrode of power semiconductor switch
Figure 560777DEST_PATH_IMAGE030
and the drain electrode of power semiconductor switch ; The grid of the grid of power semiconductor switch
Figure 758858DEST_PATH_IMAGE028
, power semiconductor switch
Figure 742863DEST_PATH_IMAGE029
grid, power semiconductor switch
Figure 351699DEST_PATH_IMAGE030
and the grid of power semiconductor switch
Figure 462874DEST_PATH_IMAGE031
are control end.
At the output of above-mentioned high step-up ratio converter, and be connected to output filter capacitor
Figure 473556DEST_PATH_IMAGE032
; First link of output filter capacitor
Figure 126998DEST_PATH_IMAGE032
is connected with the drain electrode of power semiconductor switch
Figure 223130DEST_PATH_IMAGE028
and the drain electrode of power semiconductor switch
Figure 606838DEST_PATH_IMAGE030
; Second link is connected with the source electrode of power semiconductor switch
Figure 737605DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 63413DEST_PATH_IMAGE031
.
Embodiment three
According to the embodiment of the invention, a kind of solar inverter based on high step-up ratio converter embodiment two is provided.Shown in Fig. 5 c; Present embodiment comprises high step-up ratio converter, full-bridge inverting module, has the circuit control device of MPPT function; Voltage source
Figure 646841DEST_PATH_IMAGE025
and output inductance
Figure 834239DEST_PATH_IMAGE033
and are incorporated into the power networks.
Wherein, the direct-current input power supplying of above-mentioned high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module; is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 941818DEST_PATH_IMAGE027
of effective value
Figure 888411DEST_PATH_IMAGE026
and grid-connected current of voltage to the circuit control device that has the MPPT function; Output inductance
Figure 719281DEST_PATH_IMAGE033
is connected between the source electrode of power semiconductor switch
Figure 199941DEST_PATH_IMAGE028
and the voltage source that is incorporated into the power networks
Figure 679333DEST_PATH_IMAGE025
, and said output inductance
Figure 536430DEST_PATH_IMAGE034
is connected between the source electrode of power semiconductor switch
Figure 168400DEST_PATH_IMAGE030
and the voltage source that is incorporated into the power networks
Figure 499588DEST_PATH_IMAGE025
.
Above-mentioned full-bridge inverting module; Comprise thyristor
Figure 544904DEST_PATH_IMAGE028
and , and power semiconductor switch and
Figure 514631DEST_PATH_IMAGE031
; First terminals of the output voltage of high step-up ratio converter are connected with the anode of thyristor
Figure 968615DEST_PATH_IMAGE028
and the anode of thyristor
Figure 901936DEST_PATH_IMAGE030
; Second terminals are connected with the source electrode of power semiconductor switch
Figure 508498DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 767441DEST_PATH_IMAGE031
; The negative electrode of thyristor
Figure 944607DEST_PATH_IMAGE028
is connected with the drain electrode of power semiconductor switch
Figure 947198DEST_PATH_IMAGE029
; And behind the voltage source that is incorporated into the power networks
Figure 408266DEST_PATH_IMAGE025
, be connected with the negative electrode of thyristor
Figure 572531DEST_PATH_IMAGE030
and the drain electrode of power semiconductor switch
Figure 1107DEST_PATH_IMAGE031
; The control utmost point of the control utmost point of thyristor
Figure 541810DEST_PATH_IMAGE028
, power semiconductor switch
Figure 857385DEST_PATH_IMAGE029
grid, thyristor
Figure 458130DEST_PATH_IMAGE030
and the grid of power semiconductor switch
Figure 606959DEST_PATH_IMAGE031
are control end.
Embodiment four
According to the embodiment of the invention, a kind of solar inverter based on high step-up ratio converter embodiment two is provided.Shown in Fig. 5 d; Present embodiment comprises high step-up ratio converter, full-bridge inverting module, has the circuit control device of MPPT function; Voltage source
Figure 951352DEST_PATH_IMAGE025
and output inductance and
Figure 387013DEST_PATH_IMAGE034
are incorporated into the power networks.
Wherein, the direct-current input power supplying of above-mentioned high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 893081DEST_PATH_IMAGE025
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 178754DEST_PATH_IMAGE027
of effective value
Figure 296249DEST_PATH_IMAGE026
and grid-connected current of voltage to the circuit control device that has the MPPT function; Output inductance
Figure 468921DEST_PATH_IMAGE033
is connected between the source electrode of power semiconductor switch
Figure 145890DEST_PATH_IMAGE028
and the voltage source that is incorporated into the power networks
Figure 272240DEST_PATH_IMAGE025
, and said output inductance is connected between the source electrode of power semiconductor switch
Figure 103110DEST_PATH_IMAGE030
and the voltage source that is incorporated into the power networks
Figure 216560DEST_PATH_IMAGE025
.
Above-mentioned full-bridge inverting module; Comprise thyristor
Figure 328741DEST_PATH_IMAGE028
and
Figure 553049DEST_PATH_IMAGE030
, and power semiconductor switch
Figure 817808DEST_PATH_IMAGE029
and
Figure 102159DEST_PATH_IMAGE031
; First terminals of the output voltage of high step-up ratio converter are connected with the anode of thyristor
Figure 940452DEST_PATH_IMAGE028
and the anode of thyristor
Figure 968451DEST_PATH_IMAGE030
; Second terminals are connected with the source electrode of power semiconductor switch
Figure 150033DEST_PATH_IMAGE029
and the source electrode of power semiconductor switch
Figure 542969DEST_PATH_IMAGE031
; The negative electrode of thyristor
Figure 442792DEST_PATH_IMAGE028
is connected with the drain electrode of power semiconductor switch
Figure 195853DEST_PATH_IMAGE029
; And behind the voltage source that is incorporated into the power networks , be connected with the negative electrode of thyristor
Figure 795778DEST_PATH_IMAGE030
and the drain electrode of power semiconductor switch
Figure 917318DEST_PATH_IMAGE031
; The control utmost point of the control utmost point of thyristor
Figure 975535DEST_PATH_IMAGE028
, power semiconductor switch
Figure 131710DEST_PATH_IMAGE029
grid, thyristor
Figure 676567DEST_PATH_IMAGE030
and the grid of power semiconductor switch
Figure 410037DEST_PATH_IMAGE031
are control end.
The foregoing description one to embodiment four shown in Fig. 5 a ~ Fig. 5 d has provided the solar inverter structure based on the foregoing description shown in Fig. 3 a ~ Fig. 3 d one to embodiment four.The input of solar inverter can be one or more solar panel.Shown in Fig. 5 a and Fig. 5 b, be two-layer configuration based on the solar inverter of preceding two kinds of high step-up ratio converters, high step-up ratio converter just is responsible for MPPT control and is boosted, and is output as a fixing high-voltage dc voltage, such as, 400V.Late-class circuit is generally one and works in high frequency and switch that (frequency is generally the full bridge inverter of 10kHz ~ 20kHz), is modulated into output current and the synchronous sinusoidal current of line voltage same frequency, through importing electrical network behind the output filter.
Solar inverter structure based on back two kinds of high step-up ratio converters is different.Shown in Fig. 5 c and Fig. 5 d, high step-up ratio converter has also carried out the output current modulation when realizing MPPT control.Under the ideal situation, the expression formula of output current wave and line voltage is:
Figure 317950DEST_PATH_IMAGE036
（2）
Where,
Figure DEST_PATH_IMAGE037
and
Figure 266315DEST_PATH_IMAGE038
high step-up ratio converter output current and grid voltage instantaneous value;
Figure DEST_PATH_IMAGE039
and
Figure 922686DEST_PATH_IMAGE040
were high step-up ratio converter output current and grid voltage rms; ω is the grid frequency.
The output of high step-up ratio converter connects a commutating circuit of being made up of thyristor SCR and MOSFET that works in mains frequency, through behind the output filter filtering high-frequency harmonic, make final grid-connected current for and electrical network with synchronous sine wave frequently.
In above-mentioned 5a ~ Fig. 5 d, the controller of inverter generally is to adopt digitial controller DSP or high-performance single-chip microprocessor MCU.In order to realize MPPT maximum power point tracking (MPPT) function, need the output voltage
Figure DEST_PATH_IMAGE041
and the output current of sampling solar panel.In the DSP / MCU in the MPPT control procedures under which
Figure 668105DEST_PATH_IMAGE041
and generates a control signal.For electric current and the line voltage homophase that lets inverter export, realize that power factor is the power delivery that is incorporated into the power networks of unit one, need the voltage of sampling grid side and the output current of inverter.Voltage on line side is used for producing a time-base signal, and this time-base signal can be used for producing a sinusoidal signal with the line voltage homophase, cooperates with the control signal that comes from MPPT, produces the benchmark of output current.The output current that sampling is returned and this current reference relatively after; Through the error adjuster, output a control signal to switching tube
Figure 124680DEST_PATH_IMAGE001
~
Figure 442529DEST_PATH_IMAGE031
.Like this, can let solar panel be operated in maximum power point, also can guarantee output current and grid side voltage homophase.
Solar cell system embodiment
According to the embodiment of the invention, a kind of high step-up ratio converter solar cell system based on arbitrary embodiment among the embodiment one to four is provided.As shown in Figure 6, in the present embodiment, comprise TRT, inverter and electrical network and/or electric equipment at least, TRT, inverter and electrical network and/or electric equipment connect successively; The voltage and the electric current of TRT output after inverter is handled, are supplied with electrical network and/or electric equipment.Here, TRT comprises parallel wind power generation plant and the device of solar generating that is provided with at least.
Wherein, inverter comprises high step-up ratio converter, control circuit, accessory power supply and communication module at least; Control circuit and accessory power supply are connected with high step-up ratio converter and communication module respectively; The voltage and the electric current of TRT output after high step-up ratio converter is handled, are supplied with electrical network and/or electric equipment and are connected.
In addition, in the above-described embodiments, in inverter, can also comprise other equipment that inverter work is required, control circuit and accessory power supply are connected with other equipment respectively.
Preferably, in order to realize this locality and/or remote supervisory function, in above-mentioned solar cell system, at least also comprise communication gate, computer server and monitoring and administrative center based on high step-up ratio converter; Communication module, communication gate, computer server and monitoring and administrative center connect successively.
What should explain at last is: the above is merely the preferred embodiments of the present invention; Be not limited to the present invention; Although the present invention has been carried out detailed explanation with reference to previous embodiment; For a person skilled in the art, it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (34)

1. one kind high step-up ratio converter; It is characterized in that; Comprise direct-current input power supplying; Halfwave rectifier electric capacity ; Clamping capacitance ; Transformer; The former limit of transformer magnetizing inductance
Figure 2012100039638100001DEST_PATH_IMAGE006
; Resonant inductance
Figure 2012100039638100001DEST_PATH_IMAGE008
; Power semiconductor switch
Figure 2012100039638100001DEST_PATH_IMAGE010
and
Figure 2012100039638100001DEST_PATH_IMAGE012
;
Figure 329037DEST_PATH_IMAGE010
body diode or extra parallel diode
Figure 2012100039638100001DEST_PATH_IMAGE014
and
Figure 2012100039638100001DEST_PATH_IMAGE016
with ; Output resistance
Figure 2012100039638100001DEST_PATH_IMAGE018
, and transformer secondary rectifier diode
Figure 2012100039638100001DEST_PATH_IMAGE020
; Wherein:
The positive pole of said direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance , be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of transformer secondary coil, transformer secondary rectifier diode
Figure 163067DEST_PATH_IMAGE020
, power semiconductor switch
Figure 977439DEST_PATH_IMAGE012
,
Figure 986853DEST_PATH_IMAGE012
or extra parallel diode
Figure 253886DEST_PATH_IMAGE016
and first link of output resistance
Figure 390469DEST_PATH_IMAGE018
; Successively behind the former limit of transformer magnetizing inductance
Figure 59348DEST_PATH_IMAGE006
and resonant inductance
Figure 741127DEST_PATH_IMAGE008
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 433140DEST_PATH_IMAGE012
,
Figure 170151DEST_PATH_IMAGE012
or extra parallel diode
Figure 880487DEST_PATH_IMAGE016
, power semiconductor switch
Figure 310332DEST_PATH_IMAGE010
and
Figure 489640DEST_PATH_IMAGE010
or extra parallel diode
Figure 764764DEST_PATH_IMAGE014
; And behind halfwave rectifier electric capacity
Figure 93721DEST_PATH_IMAGE002
, be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch ,
Figure 95492DEST_PATH_IMAGE010
or extra parallel diode
Figure 174306DEST_PATH_IMAGE014
and second link of output resistance
Figure 859234DEST_PATH_IMAGE018
;
The end of said transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance
Figure 630881DEST_PATH_IMAGE006
and resonant inductance
Figure 519203DEST_PATH_IMAGE008
; The end of transformer secondary coil is connected with the anode of transformer secondary rectifier diode ; The grid of power semiconductor switch
Figure 442608DEST_PATH_IMAGE010
is used for the pulse signal of input duty cycle for
Figure 2012100039638100001DEST_PATH_IMAGE022
; The grid of power semiconductor switch
Figure 322839DEST_PATH_IMAGE012
is used for the pulse signal of input duty cycle for
Figure 2012100039638100001DEST_PATH_IMAGE024
.
2. high step-up ratio converter according to claim 1; It is characterized in that, also comprise transformer secondary filter capacitor
Figure 2012100039638100001DEST_PATH_IMAGE026
; Said transformer secondary filter capacitor is connected between the negative electrode of top and transformer secondary rectifier diode
Figure 306024DEST_PATH_IMAGE020
of transformer secondary coil.
3. high step-up ratio converter according to claim 1 and 2; It is characterized in that, also comprise shunt capacitance
Figure 2012100039638100001DEST_PATH_IMAGE028
and ; Said shunt capacitance
Figure 469939DEST_PATH_IMAGE028
is attempted by between the anode and negative electrode of the body diode of
Figure 521072DEST_PATH_IMAGE010
or extra parallel diode
Figure 446302DEST_PATH_IMAGE014
; Said shunt capacitance is attempted by between the anode and negative electrode of the body diode of
Figure 856741DEST_PATH_IMAGE012
or extra parallel diode
Figure 141092DEST_PATH_IMAGE016
.
4. high step-up ratio converter according to claim 1 and 2 is characterized in that, said direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV or storage battery at least;
Said power semiconductor switch
Figure 242034DEST_PATH_IMAGE010
and
Figure 270033DEST_PATH_IMAGE012
comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
5. one kind high step-up ratio converter; It is characterized in that; Comprise direct-current input power supplying; Full-wave rectification electric capacity ; Clamping capacitance ; Transformer; The former limit of transformer magnetizing inductance
Figure 765922DEST_PATH_IMAGE006
; Resonant inductance
Figure 665745DEST_PATH_IMAGE008
; Power semiconductor switch
Figure 169539DEST_PATH_IMAGE010
and
Figure 471207DEST_PATH_IMAGE012
; The body diode of and
Figure 904386DEST_PATH_IMAGE012
or extra parallel diode
Figure 211871DEST_PATH_IMAGE014
and
Figure 102467DEST_PATH_IMAGE016
; Output resistance , and transformer secondary rectifier diode
Figure 695308DEST_PATH_IMAGE020
and
Figure 2012100039638100001DEST_PATH_IMAGE034
; Wherein:
The positive pole of said direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 806483DEST_PATH_IMAGE004
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of the anode of transformer secondary rectifier diode
Figure 505580DEST_PATH_IMAGE020
, transformer secondary coil, transformer secondary rectifier diode
Figure 411219DEST_PATH_IMAGE034
, power semiconductor switch ,
Figure 405906DEST_PATH_IMAGE012
or extra parallel diode and first link of output resistance
Figure 347634DEST_PATH_IMAGE018
; Successively behind the former limit of transformer magnetizing inductance
Figure 931062DEST_PATH_IMAGE006
and resonant inductance , be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 869116DEST_PATH_IMAGE012
,
Figure 116557DEST_PATH_IMAGE012
or extra parallel diode
Figure 187281DEST_PATH_IMAGE016
, power semiconductor switch
Figure 427639DEST_PATH_IMAGE010
and
Figure 267419DEST_PATH_IMAGE010
or extra parallel diode
Figure 685762DEST_PATH_IMAGE014
; And behind full-wave rectification electric capacity , be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch ,
Figure 218002DEST_PATH_IMAGE010
or extra parallel diode
Figure 807247DEST_PATH_IMAGE014
and second link of output resistance
Figure 852563DEST_PATH_IMAGE018
;
The end of said transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance and resonant inductance
Figure 983516DEST_PATH_IMAGE008
; The end of transformer secondary coil is connected with the negative electrode of transformer secondary rectifier diode
Figure 9241DEST_PATH_IMAGE020
and the anode of transformer secondary rectifier diode
Figure 961760DEST_PATH_IMAGE034
; The grid of power semiconductor switch
Figure 160660DEST_PATH_IMAGE010
is used for the pulse signal of input duty cycle for
Figure 501643DEST_PATH_IMAGE022
; The grid of power semiconductor switch is used for the pulse signal of input duty cycle for .
6. high step-up ratio converter according to claim 5; It is characterized in that, also comprise transformer secondary filter capacitor
Figure 2012100039638100001DEST_PATH_IMAGE036
and
Figure 2012100039638100001DEST_PATH_IMAGE038
; Said transformer secondary filter capacitor is connected between the anode of top and transformer secondary rectifier diode
Figure 588362DEST_PATH_IMAGE020
of transformer secondary coil; Said transformer secondary filter capacitor
Figure 955889DEST_PATH_IMAGE038
is connected between the negative electrode of top and transformer secondary rectifier diode of transformer secondary coil.
7. according to claim 5 or 6 described high step-up ratio converters; It is characterized in that, also comprise shunt capacitance
Figure 659589DEST_PATH_IMAGE028
and
Figure 303060DEST_PATH_IMAGE030
; Said shunt capacitance
Figure 575909DEST_PATH_IMAGE028
is attempted by between the anode and negative electrode of the body diode of
Figure 304831DEST_PATH_IMAGE010
or extra parallel diode
Figure 74991DEST_PATH_IMAGE014
; Said shunt capacitance
Figure 572968DEST_PATH_IMAGE030
is attempted by between the anode and negative electrode of the body diode of
Figure 16719DEST_PATH_IMAGE012
or extra parallel diode
Figure 232936DEST_PATH_IMAGE016
.
8. according to claim 5 or 6 described high step-up ratio converters, it is characterized in that said direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV or storage battery at least;
Said power semiconductor switch
Figure 302392DEST_PATH_IMAGE010
and
Figure 654876DEST_PATH_IMAGE012
comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
9. one kind high step-up ratio converter; It is characterized in that; Comprise direct-current input power supplying; Halfwave rectifier electric capacity
Figure 535108DEST_PATH_IMAGE002
; Clamping capacitance
Figure 661458DEST_PATH_IMAGE004
; Transformer; The former limit of transformer magnetizing inductance
Figure 82075DEST_PATH_IMAGE006
; Resonant inductance
Figure 492328DEST_PATH_IMAGE008
; Power semiconductor switch
Figure 340198DEST_PATH_IMAGE010
and
Figure 452379DEST_PATH_IMAGE012
; The body diode of
Figure 676687DEST_PATH_IMAGE010
and
Figure 941446DEST_PATH_IMAGE012
or extra parallel diode
Figure 225797DEST_PATH_IMAGE014
and ; Output resistance
Figure 86230DEST_PATH_IMAGE018
, and transformer secondary rectifier diode ; Wherein:
The positive pole of said direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 660747DEST_PATH_IMAGE004
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of transformer secondary coil, transformer secondary rectifier diode
Figure 747521DEST_PATH_IMAGE020
, power semiconductor switch
Figure 313632DEST_PATH_IMAGE012
,
Figure 287404DEST_PATH_IMAGE012
or extra parallel diode
Figure 913557DEST_PATH_IMAGE016
and first link of output resistance
Figure 989092DEST_PATH_IMAGE018
; Successively behind the former limit of transformer magnetizing inductance
Figure 93314DEST_PATH_IMAGE006
and resonant inductance
Figure 187172DEST_PATH_IMAGE008
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch ,
Figure 780013DEST_PATH_IMAGE012
or extra parallel diode
Figure 953506DEST_PATH_IMAGE016
, power semiconductor switch and
Figure 869826DEST_PATH_IMAGE010
or extra parallel diode
Figure 645584DEST_PATH_IMAGE014
; And behind halfwave rectifier electric capacity , be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch and
Figure 485867DEST_PATH_IMAGE010
or extra parallel diode
Figure 69295DEST_PATH_IMAGE014
;
The end of said transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance and resonant inductance
Figure 241968DEST_PATH_IMAGE008
; The end of transformer secondary coil is connected with the anode of transformer secondary rectifier diode
Figure 240142DEST_PATH_IMAGE020
; Second link of output resistance
Figure 310866DEST_PATH_IMAGE018
is connected with the positive pole of direct-current input power supplying; The grid of power semiconductor switch
Figure 301956DEST_PATH_IMAGE010
is used for the pulse signal of input duty cycle for
Figure 141736DEST_PATH_IMAGE022
; The grid of power semiconductor switch is used for the pulse signal of input duty cycle for .
10. high step-up ratio converter according to claim 9; It is characterized in that, also comprise transformer secondary filter capacitor ; Said transformer secondary filter capacitor
Figure 590855DEST_PATH_IMAGE026
is connected between the negative electrode of top and transformer secondary rectifier diode
Figure 927902DEST_PATH_IMAGE020
of transformer secondary coil.
11. according to claim 9 or 10 described high step-up ratio converters; It is characterized in that, also comprise shunt capacitance
Figure 973218DEST_PATH_IMAGE028
and
Figure 306111DEST_PATH_IMAGE030
; Said shunt capacitance
Figure 854904DEST_PATH_IMAGE028
is attempted by between the anode and negative electrode of the body diode of
Figure 129896DEST_PATH_IMAGE010
or extra parallel diode
Figure 396929DEST_PATH_IMAGE014
; Said shunt capacitance
Figure 267933DEST_PATH_IMAGE030
is attempted by between the anode and negative electrode of the body diode of
Figure 936812DEST_PATH_IMAGE012
or extra parallel diode
Figure 884171DEST_PATH_IMAGE016
.
12., it is characterized in that said direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV or storage battery at least according to claim 9 or 10 described high step-up ratio converters;
Said power semiconductor switch
Figure 372921DEST_PATH_IMAGE010
and
Figure 313195DEST_PATH_IMAGE012
comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
13. one kind high step-up ratio converter; It is characterized in that; Comprise direct-current input power supplying; Full-wave rectification electric capacity
Figure 836580DEST_PATH_IMAGE032
; Clamping capacitance
Figure 187796DEST_PATH_IMAGE004
; Transformer; The former limit of transformer magnetizing inductance
Figure 429421DEST_PATH_IMAGE006
; Resonant inductance
Figure 907807DEST_PATH_IMAGE008
; Power semiconductor switch
Figure 285699DEST_PATH_IMAGE010
and
Figure 577790DEST_PATH_IMAGE012
; The body diode of
Figure 978815DEST_PATH_IMAGE010
and
Figure 323209DEST_PATH_IMAGE012
or extra parallel diode
Figure 8137DEST_PATH_IMAGE014
and
Figure 514205DEST_PATH_IMAGE016
; Output resistance
Figure 668106DEST_PATH_IMAGE018
, and transformer secondary rectifier diode
Figure 550611DEST_PATH_IMAGE020
and
Figure 591510DEST_PATH_IMAGE034
; Wherein:
The positive pole of said direct-current input power supplying is connected with the top of transformer primary coil; Behind clamping capacitance
Figure 268479DEST_PATH_IMAGE004
, be connected with the negative electrode of the body diode of the drain electrode of the negative electrode of the top of the anode of transformer secondary rectifier diode
Figure 644097DEST_PATH_IMAGE020
, transformer secondary coil, transformer secondary rectifier diode , power semiconductor switch
Figure 724235DEST_PATH_IMAGE012
, or extra parallel diode
Figure 700598DEST_PATH_IMAGE016
and first link of output resistance
Figure 924906DEST_PATH_IMAGE018
; Successively behind the former limit of transformer magnetizing inductance and resonant inductance
Figure 221819DEST_PATH_IMAGE008
, be connected with the negative electrode of the body diode of the drain electrode of the anode of the body diode of the source electrode of power semiconductor switch
Figure 306449DEST_PATH_IMAGE012
,
Figure 334448DEST_PATH_IMAGE012
or extra parallel diode
Figure 702981DEST_PATH_IMAGE016
, power semiconductor switch
Figure 95917DEST_PATH_IMAGE010
and
Figure 995740DEST_PATH_IMAGE010
or extra parallel diode ; And behind full-wave rectification electric capacity
Figure 286355DEST_PATH_IMAGE032
, be connected with the anode of the body diode of the source electrode of the negative pole of direct-current input power supplying, power semiconductor switch
Figure 850191DEST_PATH_IMAGE010
and
Figure 971731DEST_PATH_IMAGE010
or extra parallel diode ;
The end of said transformer primary coil is connected with the common port of the former limit of transformer magnetizing inductance
Figure 684658DEST_PATH_IMAGE006
and resonant inductance
Figure 419396DEST_PATH_IMAGE008
; The end of transformer secondary coil is connected with the negative electrode of transformer secondary rectifier diode
Figure 28232DEST_PATH_IMAGE020
and the anode of transformer secondary rectifier diode
Figure 451709DEST_PATH_IMAGE034
; Second link of output resistance
Figure 462390DEST_PATH_IMAGE018
is connected with the positive pole of direct-current input power supplying; The grid of power semiconductor switch
Figure 368029DEST_PATH_IMAGE010
is used for the pulse signal of input duty cycle for
Figure 464161DEST_PATH_IMAGE022
; The grid of power semiconductor switch
Figure 362716DEST_PATH_IMAGE012
is used for the pulse signal of input duty cycle for
Figure 493483DEST_PATH_IMAGE024
.
14. high step-up ratio converter according to claim 13; It is characterized in that, also comprise transformer secondary filter capacitor
Figure 570023DEST_PATH_IMAGE036
and
Figure 887872DEST_PATH_IMAGE038
; Said transformer secondary filter capacitor
Figure 91583DEST_PATH_IMAGE036
is connected between the anode of top and transformer secondary rectifier diode
Figure 76856DEST_PATH_IMAGE020
of transformer secondary coil; Said transformer secondary filter capacitor
Figure 324298DEST_PATH_IMAGE038
is connected between the negative electrode of top and transformer secondary rectifier diode
Figure 129443DEST_PATH_IMAGE034
of transformer secondary coil.
15. according to claim 13 or 14 described high step-up ratio converters; It is characterized in that, also comprise shunt capacitance
Figure 369800DEST_PATH_IMAGE028
and
Figure 209580DEST_PATH_IMAGE030
; Said shunt capacitance
Figure 627923DEST_PATH_IMAGE028
is attempted by between the anode and negative electrode of the body diode of
Figure 185944DEST_PATH_IMAGE010
or extra parallel diode
Figure 462948DEST_PATH_IMAGE014
; Said shunt capacitance
Figure 360497DEST_PATH_IMAGE030
is attempted by between the anode and negative electrode of the body diode of or extra parallel diode
Figure 978746DEST_PATH_IMAGE016
.
16., it is characterized in that said direct-current input power supplying is energy storage device or wind energy generating plant or the light heat generator that comprises solar panel PV or storage battery at least according to claim 13 or 14 described high step-up ratio converters;
Said power semiconductor switch
Figure 373955DEST_PATH_IMAGE010
and comprise at least a in MOS memory MOSFET, insulated gate bipolar transistor npn npn IGBT and the diode at least.
17. solar inverter based on the described high step-up ratio converter of claim 1; It is characterized in that; Comprise high step-up ratio converter, full-bridge inverting module, have the circuit control device of MPPT maximum power point tracking MPPT function and the voltage source
Figure 2012100039638100001DEST_PATH_IMAGE040
that is incorporated into the power networks, wherein:
The direct-current input power supplying of said high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 636888DEST_PATH_IMAGE040
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 2012100039638100001DEST_PATH_IMAGE044
of effective value
Figure 2012100039638100001DEST_PATH_IMAGE042
and grid-connected current of voltage to the circuit control device that has the MPPT function.
18. the solar inverter based on high step-up ratio converter according to claim 17; It is characterized in that; Said full-bridge inverting module comprises power semiconductor switch
Figure 2012100039638100001DEST_PATH_IMAGE046
, ,
Figure 2012100039638100001DEST_PATH_IMAGE050
and ; First terminals of the output voltage of said high step-up ratio converter are connected with the drain electrode of power semiconductor switch
Figure 657584DEST_PATH_IMAGE046
and the drain electrode of power semiconductor switch ; Second terminals are connected with the source electrode of power semiconductor switch
Figure 463046DEST_PATH_IMAGE048
and the source electrode of power semiconductor switch ;
The source electrode of said power semiconductor switch
Figure 397690DEST_PATH_IMAGE046
is connected with the drain electrode of power semiconductor switch
Figure 400281DEST_PATH_IMAGE048
; And behind the voltage source that is incorporated into the power networks
Figure 861349DEST_PATH_IMAGE040
, be connected with the source electrode of power semiconductor switch
Figure 25614DEST_PATH_IMAGE050
and the drain electrode of power semiconductor switch ; The grid of the grid of power semiconductor switch
Figure 496358DEST_PATH_IMAGE046
, power semiconductor switch
Figure 811933DEST_PATH_IMAGE048
grid, power semiconductor switch
Figure 412678DEST_PATH_IMAGE050
and the grid of power semiconductor switch are control end.
19. according to claim 17 or 18 described solar inverters based on high step-up ratio converter; It is characterized in that; At the output of said high step-up ratio converter, and be connected to output filter capacitor
Figure 2012100039638100001DEST_PATH_IMAGE054
; First link of said output filter capacitor is connected with the drain electrode of power semiconductor switch
Figure 262932DEST_PATH_IMAGE046
and the drain electrode of power semiconductor switch
Figure 34579DEST_PATH_IMAGE050
; Second link is connected with the source electrode of power semiconductor switch
Figure 922901DEST_PATH_IMAGE048
and the source electrode of power semiconductor switch
Figure 805406DEST_PATH_IMAGE052
.
20. the solar inverter based on high step-up ratio converter according to claim 19; It is characterized in that; Also comprise output inductance
Figure 2012100039638100001DEST_PATH_IMAGE056
and
Figure 2012100039638100001DEST_PATH_IMAGE058
; Said output inductance is connected between the source electrode of power semiconductor switch
Figure 225072DEST_PATH_IMAGE046
and the voltage source that is incorporated into the power networks
Figure 351422DEST_PATH_IMAGE040
, and said output inductance is connected between the source electrode of power semiconductor switch
Figure 182292DEST_PATH_IMAGE050
and the voltage source that is incorporated into the power networks .
21. solar inverter based on the described high step-up ratio converter of claim 5; It is characterized in that; Comprise high step-up ratio converter, full-bridge inverting module, have the circuit control device of MPPT function and the voltage source
Figure 407923DEST_PATH_IMAGE040
that is incorporated into the power networks, wherein:
The direct-current input power supplying of said high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 632231DEST_PATH_IMAGE040
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 915762DEST_PATH_IMAGE044
of effective value
Figure 896990DEST_PATH_IMAGE042
and grid-connected current of voltage to the circuit control device that has the MPPT function.
22. the solar inverter based on high step-up ratio converter according to claim 21; It is characterized in that; Said full-bridge inverting module comprises power semiconductor switch ,
Figure 35914DEST_PATH_IMAGE048
,
Figure 155179DEST_PATH_IMAGE050
and
Figure 610432DEST_PATH_IMAGE052
; First terminals of the output voltage of said high step-up ratio converter are connected with the drain electrode of power semiconductor switch and the drain electrode of power semiconductor switch ; Second terminals are connected with the source electrode of power semiconductor switch
Figure 237088DEST_PATH_IMAGE048
and the source electrode of power semiconductor switch
Figure 863241DEST_PATH_IMAGE052
;
The source electrode of said power semiconductor switch
Figure 673197DEST_PATH_IMAGE046
is connected with the drain electrode of power semiconductor switch
Figure 42998DEST_PATH_IMAGE048
; And behind the voltage source that is incorporated into the power networks , be connected with the source electrode of power semiconductor switch
Figure 933911DEST_PATH_IMAGE050
and the drain electrode of power semiconductor switch
Figure 729697DEST_PATH_IMAGE052
; The grid of the grid of power semiconductor switch
Figure 637610DEST_PATH_IMAGE046
, power semiconductor switch
Figure 585975DEST_PATH_IMAGE048
grid, power semiconductor switch
Figure 553931DEST_PATH_IMAGE050
and the grid of power semiconductor switch are control end.
23. according to claim 21 or 22 described solar inverters based on high step-up ratio converter; It is characterized in that; At the output of said high step-up ratio converter, and be connected to output filter capacitor
Figure 47153DEST_PATH_IMAGE054
; First link of said output filter capacitor is connected with the drain electrode of power semiconductor switch
Figure 175832DEST_PATH_IMAGE046
and the drain electrode of power semiconductor switch
Figure 759260DEST_PATH_IMAGE050
; Second link is connected with the source electrode of power semiconductor switch
Figure 212238DEST_PATH_IMAGE048
and the source electrode of power semiconductor switch
Figure 931932DEST_PATH_IMAGE052
.
24. the solar inverter based on high step-up ratio converter according to claim 23; It is characterized in that; Also comprise output inductance
Figure 930106DEST_PATH_IMAGE056
and
Figure 830DEST_PATH_IMAGE058
; Said output inductance
Figure 991920DEST_PATH_IMAGE056
is connected between the source electrode of power semiconductor switch
Figure 831700DEST_PATH_IMAGE046
and the voltage source that is incorporated into the power networks
Figure 499311DEST_PATH_IMAGE040
, and said output inductance
Figure 57331DEST_PATH_IMAGE058
is connected between the source electrode of power semiconductor switch and the voltage source that is incorporated into the power networks
Figure 280819DEST_PATH_IMAGE040
.
25. solar inverter based on the described high step-up ratio converter of claim 9; It is characterized in that; Comprise high step-up ratio converter, full-bridge inverting module, have the circuit control device of MPPT function and the voltage source
Figure 889305DEST_PATH_IMAGE040
that is incorporated into the power networks, wherein:
The direct-current input power supplying of said high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 669042DEST_PATH_IMAGE040
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 816307DEST_PATH_IMAGE044
of effective value
Figure 1934DEST_PATH_IMAGE042
and grid-connected current of voltage to the circuit control device that has the MPPT function.
26. the solar inverter based on high step-up ratio converter according to claim 25; It is characterized in that; Said full-bridge inverting module; Comprise thyristor
Figure 825720DEST_PATH_IMAGE046
and , and power semiconductor switch
Figure 229336DEST_PATH_IMAGE048
and
Figure 898215DEST_PATH_IMAGE052
;
First terminals of the output voltage of said high step-up ratio converter are connected with the anode of thyristor
Figure 579994DEST_PATH_IMAGE046
and the anode of thyristor
Figure 334324DEST_PATH_IMAGE050
; Second terminals are connected with the source electrode of power semiconductor switch and the source electrode of power semiconductor switch ;
The negative electrode of said thyristor is connected with the drain electrode of power semiconductor switch
Figure 328507DEST_PATH_IMAGE048
; And behind the voltage source that is incorporated into the power networks
Figure 603631DEST_PATH_IMAGE040
, be connected with the negative electrode of thyristor
Figure 932588DEST_PATH_IMAGE050
and the drain electrode of power semiconductor switch
Figure 267754DEST_PATH_IMAGE052
; The control utmost point of the control utmost point of thyristor
Figure 934359DEST_PATH_IMAGE046
, power semiconductor switch
Figure 200124DEST_PATH_IMAGE048
grid, thyristor
Figure 698101DEST_PATH_IMAGE050
and the grid of power semiconductor switch are control end.
27. the solar inverter based on high step-up ratio converter according to claim 26; It is characterized in that; Also comprise output inductance
Figure 358070DEST_PATH_IMAGE056
and
Figure 928991DEST_PATH_IMAGE058
; Said output inductance
Figure 281475DEST_PATH_IMAGE056
is connected between the source electrode of power semiconductor switch
Figure 161706DEST_PATH_IMAGE046
and the voltage source that is incorporated into the power networks
Figure 599641DEST_PATH_IMAGE040
, and said output inductance
Figure 207208DEST_PATH_IMAGE058
is connected between the source electrode of power semiconductor switch
Figure 679778DEST_PATH_IMAGE050
and the voltage source that is incorporated into the power networks .
28. solar inverter based on the described high step-up ratio converter of claim 13; It is characterized in that; Comprise high step-up ratio converter, full-bridge inverting module, have the circuit control device of MPPT function and the voltage source
Figure 656141DEST_PATH_IMAGE040
that is incorporated into the power networks, wherein:
The direct-current input power supplying of said high step-up ratio converter input, output dc voltage and direct current are to the circuit control device that has the MPPT function; The output voltage of high step-up ratio converter; After the full-bridge inverting module;
Figure 583513DEST_PATH_IMAGE040
is connected with the voltage source that is incorporated into the power networks, and output is incorporated into the power networks the effective value
Figure 867044DEST_PATH_IMAGE044
of effective value
Figure 645010DEST_PATH_IMAGE042
and grid-connected current of voltage to the circuit control device that has the MPPT function.
29. the solar inverter based on high step-up ratio converter according to claim 28; It is characterized in that; Said full-bridge inverting module; Comprise thyristor
Figure 466522DEST_PATH_IMAGE046
and
Figure 494520DEST_PATH_IMAGE050
, and power semiconductor switch and
Figure 803459DEST_PATH_IMAGE052
;
First terminals of the output voltage of said high step-up ratio converter are connected with the anode of thyristor
Figure 391697DEST_PATH_IMAGE046
and the anode of thyristor ; Second terminals are connected with the source electrode of power semiconductor switch
Figure 197159DEST_PATH_IMAGE048
and the source electrode of power semiconductor switch
Figure 557734DEST_PATH_IMAGE052
;
The negative electrode of said thyristor
Figure 131803DEST_PATH_IMAGE046
is connected with the drain electrode of power semiconductor switch
Figure 501605DEST_PATH_IMAGE048
; And behind the voltage source that is incorporated into the power networks , be connected with the negative electrode of thyristor
Figure 126938DEST_PATH_IMAGE050
and the drain electrode of power semiconductor switch
Figure 421260DEST_PATH_IMAGE052
; The control utmost point of the control utmost point of thyristor
Figure 594752DEST_PATH_IMAGE046
, power semiconductor switch
Figure 543117DEST_PATH_IMAGE048
grid, thyristor
Figure 511073DEST_PATH_IMAGE050
and the grid of power semiconductor switch
Figure 794155DEST_PATH_IMAGE052
are control end.
30. the solar inverter based on high step-up ratio converter according to claim 29; It is characterized in that; Also comprise output inductance
Figure 505759DEST_PATH_IMAGE056
and
Figure 308630DEST_PATH_IMAGE058
; Said output inductance
Figure 447488DEST_PATH_IMAGE056
is connected between the source electrode of power semiconductor switch and the voltage source that is incorporated into the power networks
Figure 906730DEST_PATH_IMAGE040
, and said output inductance
Figure 770300DEST_PATH_IMAGE058
is connected between the source electrode of power semiconductor switch
Figure 80058DEST_PATH_IMAGE050
and the voltage source that is incorporated into the power networks
Figure 839198DEST_PATH_IMAGE040
.
31. one kind based on claim 1 or 5 or the solar cell system of 9 or 13 described high step-up ratio converters; It is characterized in that; At least comprise TRT, inverter and electrical network and/or electric equipment, said TRT, inverter and electrical network and/or electric equipment connect successively; The voltage and the electric current of said TRT output after inverter is handled, are supplied with electrical network and/or electric equipment.
32. the solar cell system based on high step-up ratio converter according to claim 31 is characterized in that, said inverter comprises high step-up ratio converter, control circuit, accessory power supply and communication module at least; Wherein:
Said control circuit and accessory power supply are connected with high step-up ratio converter and communication module respectively; The voltage and the electric current of TRT output after high step-up ratio converter is handled, are supplied with electrical network and/or electric equipment and are connected.
33. according to claim 31 or 32 described solar cell systems, it is characterized in that, at least also comprise communication gate, computer server and monitoring and administrative center based on high step-up ratio converter; Said communication module, communication gate, computer server and monitoring and administrative center connect successively.
34., it is characterized in that said TRT comprises parallel wind power generation plant and the device of solar generating that is provided with at least according to claim 31 or 32 described solar cell systems based on high step-up ratio converter.
CN2012100039638A 2012-01-06 2012-01-06 Transformer with high set-up ratio, solar inverter and solar battery system Pending CN102447396A (en)

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US20130313909A1 (en) * 2012-05-22 2013-11-28 Solarworld Innovations Gmbh Single-pole switching unit for limiting the energy flow in a series circuit comprising photovoltaic modules, photovoltaic module arrangement and photovoltaic module
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CN106059485A (en) * 2016-06-30 2016-10-26 华北电力大学 Photovoltaic micro inverter
CN108400647A (en) * 2018-05-14 2018-08-14 北方工业大学 Solar power supply based on Internet photocatalyst fresh air system
CN109698618A (en) * 2019-01-04 2019-04-30 国网山东省电力公司淄博供电公司 The high-gain boost converter and its control method that coupling inductance boosting unit is realized
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US11594974B2 (en) 2020-05-19 2023-02-28 Delta Electronics, Inc. Power conversion device and power supply system
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