CN108461643A - A kind of top emitting white light quanta point FET device and preparation method thereof - Google Patents
A kind of top emitting white light quanta point FET device and preparation method thereof Download PDFInfo
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- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H10K2102/301—Details of OLEDs
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Abstract
The present invention discloses a kind of top emitting white light quanta point FET device and preparation method thereof, wherein, the device includes the substrate stacked successively, first electrode, insulating layer, second electrode, quantum dot light emitting layer and third electrode, the substrate is etched into tool in advance, and there are three the surfaces of different height, it is provided at the stepped locations that adjacent different height surface is formed and upwardly extends the first dielectric isolation layer and the second dielectric isolation layer until being contacted with third electrode lower surface, the first electrode is total reflection electrode, the second electrode is transparent electrode, the third electrode is semitransparent electrode.The enhancing for the monochromaticjty and luminous efficiency that the present invention realizes the independent lighting requirements of single pixel point and microcavity effect shines to device；The present invention also optimizes the micro-cavity structure of device simultaneously, and simplifies technical process, is integrally improved the integrated level of device, reduces the preparation difficulty of device.
Description
Technical field
The present invention relates to flat display field more particularly to a kind of top emitting white light quanta point FET device and
Preparation method.
Background technology
In recent years, light emitting diode with quantum dots（QLED）It is many because having high brightness, low-power consumption, wide colour gamut, easy processing etc.
Advantage obtains extensive concern and research in illumination and display field.In addition under the development of electronic technology, field-effect
Transistor（FET）Also become one of most widely used device in current modern microelectronics.In conjunction with luminescent device and FET
Technology, it is contemplated that QLED and FET is integrated into QLED-FET luminescent devices, realizes the huge applications background for making full use of QLED.
With small size, the increasingly maturation of passive matrix technology, large scale, active drive technology show as research master
Stream, and larger sized display needs TFT actuation techniques, the prior art by prepare the top emission light-emitting device of QLED-FET with
Solve the problems, such as that traditional bottom emission light-emitting device difficulty is combined with TFT；
However, for top emitting quantum dot light emitting device, still have that luminous efficiency is low and luminous monochromaticjty is weaker asks
Topic.
Therefore, the existing technology needs to be improved and developed.
Invention content
In view of above-mentioned deficiencies of the prior art, the top emitting field effect containing micro-cavity structure that the purpose of the present invention is to provide a kind of
Answer transistor device and preparation method thereof, it is intended to it is low to solve existing top emitting quantum dot FET device luminous efficiency
And the problem that luminous monochromaticjty is weaker.
Technical scheme is as follows：
A kind of top emitting white light quanta point FET device, wherein including stack successively substrate, first electrode, absolutely
Edge layer, second electrode, quantum dot light emitting layer and third electrode, the substrate is etched into tool in advance, and there are three the tables of different height
Face is provided at the stepped locations that adjacent different height surface is formed and upwardly extends until being connect with third electrode lower surface
Tactile the first dielectric isolation layer and the second dielectric isolation layer, the first electrode are total reflection electrode, and the second electrode is
Prescribed electrode, the third electrode are semitransparent electrode.
Preferably, the top emitting white light quanta point FET device, wherein the second electrode with it is described
It is additionally provided with hole transmission layer between quantum dot light emitting layer, is additionally provided between the third electrode and the quantum dot light emitting layer
Electron transfer layer.
Preferably, the top emitting white light quanta point FET device, wherein the quantum dot light emitting layer packet
Include red light quantum point luminescent layer, green light quantum point luminescent layer and blue light quantum point luminescent layer.
Preferably, the top emitting white light quanta point FET device, wherein the quantum dot light emitting layer
Thickness is 10-100nm.
Preferably, the top emitting white light quanta point FET device, wherein the insulating layer, first are absolutely
The material of edge separation layer and the second dielectric isolation layer is organic polymer material.
Preferably, the top emitting white light quanta point FET device, wherein the top emitting white light quantum
Point FET device be eurymeric structure, including stack successively from bottom to up substrate, first electrode, insulating layer, second
Electrode, hole transmission layer, quantum dot light emitting layer, electron transfer layer and third electrode, the second electrode are anode, third electricity
Extremely cathode.
Preferably, the top emitting white light quanta point FET device, wherein the top emitting white light quantum
Point FET device be reciprocal form structure, including stack successively from bottom to up substrate, first electrode, insulating layer, second
Electrode, electron transfer layer, quantum dot light emitting layer, hole transmission layer and third electrode, the second electrode are cathode, third electrode
For anode.
Preferably, the top emitting white light quanta point FET device, wherein the material of the electron transfer layer
Material is N-shaped ZnO, TiO2、SnO、Ta2O3、AlZnO、ZnSnO、InSnO、Alq3、Ca、Ba、CsF、LiF、CsCO3In one kind or
It is a variety of.
Preferably, the top emitting white light quanta point FET device, wherein the material of the hole transmission layer
Material is one or more in PVK, Poly-TPD and TFB.
A kind of preparation method of top emitting white light quanta point FET device, wherein including step：
A, substrate is etched into tool there are three the surface of different height in advance, the surface of adjacent different height forms ladder position；
B, the first electrode of noncontinuity is deposited on the surface of three different heights of the substrate；
C, the first electrode surface be coated with insulating materials, and by etching processing first electrode surface formed insulating layer with
And the first dielectric isolation layer and the second dielectric isolation layer are formed at the stepped locations；
D, second electrode is deposited in the surface of insulating layer；
E, quantum dot light emitting layer is deposited in the second electrode surface；
F, third electrode is deposited in the quantum dot light emitting layer surface.
Advantageous effect：The present invention is by setting first electrode to total reflection electrode and third electrode being set as translucent
Electrode, to form optical microcavity, by performing etching processing to substrate to meet different emission wavelength pixels to microcavity chamber
Long different demands, while being arranged using insulating layer as the isolation of different pixels point, to realize that the independent of single pixel point is sent out
Light requirement, while realizing the enhancing of monochromaticjty and luminous efficiency that microcavity effect shines to device；Further, the present invention is also excellent
The micro-cavity structure of device is changed, and has simplified technical process, be integrally improved the integrated level of device, the preparation for reducing device is difficult
Degree.
Description of the drawings
Fig. 1 is a kind of structural representation of top emitting white light quanta point FET device preferred embodiment of the present invention
Figure;
Fig. 2 is a kind of signal of top emitting white light quanta point FET device eurymeric structure preferred embodiment of the present invention
Figure;
Fig. 3 is a kind of signal of top emitting white light quanta point FET device reciprocal form structure preferred embodiment of the present invention
Figure.
Specific implementation mode
A kind of top emitting white light quanta point FET device of present invention offer and preparation method thereof, to make the present invention
Purpose, technical solution and effect it is clearer, clear, the present invention is described in more detail below.It should be appreciated that this place
The specific embodiment of description is only used to explain the present invention, is not intended to limit the present invention.
Referring to Fig. 1, Fig. 1 is that a kind of top emitting white light quanta point FET device provided by the invention is preferably real
The schematic diagram of example is applied, as shown, the device includes the substrate 10 stacked successively, first electrode 20, the 30, second electricity of insulating layer
Pole 40, quantum dot light emitting layer 50 and third electrode 60, the substrate 10 are etched into the surface having there are three different height in advance,
It is provided with and is upwardly extended until being connect with 60 lower surface of third electrode at the stepped locations that adjacent different height surface is formed
Tactile the first dielectric isolation layer 31 and the second dielectric isolation layer 32, the first electrode 10 are total reflection electrode, second electricity
Pole 40 is transparent electrode, and the third electrode 60 is semitransparent electrode.
Specifically, light source is mainly placed in a total reflection layer and half reflection and half transmission by the mode for forming optical microcavity
In the resonant cavity of layer composition；In the present invention, since first electrode is：Have to light electric compared with the total reflection bottom of strong reflection effect
Pole, the third electrode are：To light have half reflection and half transmission effect translucent top electrode, therefore, the first electrode with
Third electrode can form resonant cavity, be located at emergent light caused by the quantum dot light emitting layer of intra resonant cavity in the interference effect of light
Under, it can be reinforced the light of a certain wavelength and be weakened relatively the light of other wavelength, so that emergent light monochromaticjty is high, intensity
It is high；
Further, in the present invention, the first electrode is preferably Al electrodes or Ag electrodes, and light reflection effect is preferable, described
The thickness of first electrode is preferably 1-100nm（Such as 50nm）；The second electrode is transparent electrode, and material is preferably ITO
Or IZO；The third electrode is semitransparent electrode, is by Al（10nm）And Ag（2nm）The double-layer structure of composition.
Further, since the adjusting of microcavity derives from Fabry-Perot (Fabry-Perot) Resonance Equation, according to described
Fabry-Perot resonance equation formulations are it is found that certain proportional relation is presented in emission wavelength and the microcavity length of device, therefore,
By that can ensure the modulation of microcavity length the monochromaticjty and intensity of emergent light, to reach controllable purpose；
In the present invention, therefore the microcavity length, which is the distance between first electrode 20 and third electrode 40 length, can pass through
The thickness of middle layer between first electrode and third electrode realizes adjusting purpose, preferably, the present invention, which passes through, adjusts insulation
The thickness of layer 30 is to achieve the purpose that adjust microcavity length；
Further, due to different emission wavelength pixels, requirement to microcavity length is different, for this purpose, the present invention by substrate into
Row etching processing obtains the surface with different height, to meet the needs of device adjusts microcavity length.
Further, the present invention by the first dielectric isolation layer and the second dielectric isolation layer by the pixel of different emission wavelengths
It is isolated, realizes the requirement of device transmitting white light, be integrally improved the integrated level of device, simplify technical process, simultaneously
Reduce the preparation difficulty of device.
That is, since device provided by the invention is white light quanta point field-effect transistor comprising RGB tri- is not
Same single color light emitting devices, three different single color light emitting devices are dielectrically separated from by the first dielectric isolation layer and second
What layer separated, the difference that three single color light emitting devices will cause the chamber of required micro-cavity structure to be grown due to the otherness of emission wavelength
The opposite sex, the otherness are to be realized by the etching processing to substrate with obtaining the substrate surface of three different heights.
Specifically, due to red light wavelength>Green wavelength>Blue light wavelength, according to Fabry Perot Resonance Equation it is found that
Microcavity length needed for the red light emitting device>Microcavity length needed for green luminescence device>Needed for blue light emitting device
Microcavity length.
Further, in order to improve the combined efficiency of electron hole, the present invention is in the second electrode 40 and the quantum dot
It is additionally provided with hole transmission layer 41 between luminescent layer 50, is also set up between the third electrode 60 and the quantum dot light emitting layer 50
There is electron transfer layer 42.
Specifically, the present invention does into one its structure by taking eurymeric top emitting white light quanta point FET device as an example
The explanation of step, as shown in Fig. 2, the device include the substrate 10 stacked successively from bottom to up, first electrode 20, insulating layer 30,
Second electrode 40, hole transmission layer 41, quantum dot light emitting layer 50, electron transfer layer 42 and third electrode 60, wherein described
Two electrodes 40 are anode, and third electrode 60 is cathode；Further, in the eurymeric top emitting white light quanta point field-effect transistor
In device, grid of the first electrode 20 as field-effect transistor connects cathode.
Further, shown in the substrate surface height after being etched such as Fig. 2, three single color light emitting devices are from left to right successively
For red light emitting device, green luminescence device and blue light emitting device；Accordingly, the quantum dot hair in the red light emitting device
Photosphere is red quantum dot luminescent layer, and the quantum dot light emitting layer in the green luminescence device is green quantum dot light emitting layer, institute
It is blue quantum dot light emitting layer to state the quantum dot light emitting layer in blue light emitting device.
Further, in the present invention, the height that three single color light emitting devices correspond to substrate surface differs, preferably,
The substrate surface difference in height of adjacent devices is 10-200nm.
Further, in the present invention, the thickness of the quantum dot light emitting layer is 10-100nm, the thickness of the hole transmission layer
Degree is 1-100nm, and the thickness of the electron transfer layer is 30-60nm；Preferably, the thickness setting of the quantum dot light emitting layer
Thickness for 55nm, the hole transmission layer is set as 50nm, and the thickness of the electron transfer layer is set as 45nm, in the thickness
When value, the electric conductivity of the hole transmission layer and electron transfer layer is best, and required driving voltage is relatively low so that device shines
Brightness and luminous efficiency all have a distinct increment.
Further, in the present invention, the material of the electron transfer layer is N-shaped ZnO, TiO2、SnO、Ta2O3、AlZnO、
ZnSnO, InSnO, Alq3 tri- (8-hydroxyquinoline) aluminium, Ca, Ba, CsF, LiF, CsCO3In it is one or more；Preferably, institute
It is preferably the N-shaped ZnO with high electronic transmission performance to state electron transfer layer；
Further, the material of the hole transmission layer can be in PVK, Poly-TPD and TFB with deeper HOMO energy levels
It is one or more, or the material of other organic or inorganic hole transmission layers with high performance, the hole transport
Material has higher hole mobility, to ensure efficient injection of the charge to quantum dot light emitting layer；Preferably, the hole passes
The material of defeated layer is Poly-TPD or PVK, because Poly-TPD has good film forming characteristics and hole transport performance, and
Poly-TPD can improve the balance between electron hole, increase the recombination probability in hole and electronics；And PVK can be reduced effectively from anode
Layer arrives the hole injection barrier of quantum dot light emitting layer and electron injecting layer, to improve the property of white light quanta point field-effect transistor
Energy.
Further, in the present invention, the material of the quantum dot light emitting layer is II-VI group compound, iii-v chemical combination
Object, II-V compounds of group, III-VI compounds, group IV-VI compound, I-III-VI group compound, II-IV-VI compounds of group
Or it is one or more in IV races simple substance；The compound includes binary compound, ternary compound and quaternary compound.
Specifically, the semi-conducting material that the quantum dot light emitting layer uses includes but not limited to the nanometer of II-VI semiconductors
Crystalline substance, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe and other binary, three
Member, the II-VI compounds of quaternary；Nanocrystalline, such as GaP, GaAs, InP, InAs and other binary, three of Group III-V semiconductor
Member, the III-V compound of quaternary；Described is also not limited to II-V compounds of group, III- for electroluminescent semi-conducting material
VI compounds, group IV-VI compound, I-III-VI group compound, II-IV-VI compounds of group, IV races simple substance etc..
Further, the present invention also provides a kind of transoid top emitting white light quanta point FET devices, such as Fig. 3 institutes
Show, the device includes the substrate 10 stacked successively from bottom to up, first electrode 20, insulating layer 30, second electrode 40, electronics biography
Defeated layer 42, quantum dot light emitting layer 50, hole transmission layer 41 and third electrode 60, the second electrode 40 are cathode, third electrode
60 be anode, and further, in the transoid top emitting white light quanta point FET device, the first electrode 20 connects
Anode.
Based on above-mentioned top emitting white light quanta point FET device, the present invention also provides a kind of top emitting amount of white light
The preparation method of son point FET device, wherein including step：
S1, substrate is etched into the surface having there are three different height in advance, the surface of adjacent different height forms ladder position；
S2, the first electrode that noncontinuity is deposited on the surface of three different heights of the substrate；
S3, it is coated with insulating materials in the first electrode surface, and insulating layer is formed in first electrode surface by etching processing
And the first dielectric isolation layer and the second dielectric isolation layer are formed at the stepped locations;
S4, second electrode is deposited in the surface of insulating layer;
S5, quantum dot light emitting layer is deposited in the second electrode surface；
S6, third electrode is deposited in the quantum dot light emitting layer surface.
Specifically, in the step S1 and S2, substrate is etched into the surface having there are three different height in advance, it is adjacent
The surface of different height forms ladder position；The substrate etched is passed sequentially through into cleaning solution, acetone and isopropanol again and is surpassed
Sound cleans, and is finally rinsed with deionized water, removes the impurity on its surface；It is discontinuous using mask plate preparation three in substrate
First electrode, three discontinuous first electrodes are respectively used to RGB three primary colours devices, to realize microcavity effect, first electricity
Highly preferred is Al electrodes or Ag electrodes, and light reflection effect is preferable, thickness preferably 50 nm；First electrode connects as FET grids
Cathode；
In the step S3, continuing to be coated with insulating materials on the first electrode, the insulating materials is organic polymeric material, compared with
Goodly, PMMA or polyimides can be selected（PI）Material, or by PI and DMF by volume be 1:Spin coating after 1 proportioning dilution
In first electrode surface；By the good substrate of spin coating in infrared case after dry 3-10min, in argon gas protective gas atmosphere, 180-
It is made annealing treatment 3 hours under the conditions of 250 DEG C；Later by etching processing in first electrode surface formation insulating layer and in the rank
The first dielectric isolation layer and the second dielectric isolation layer are formed at terraced position；
Finally, surface of insulating layer using spraying by the way of be sequentially depositing second electrode, hole transmission layer, quantum dot light emitting layer,
Electron transfer layer and third electrode.
In conclusion the present invention is by setting first electrode to total reflection electrode and third electrode being set as translucent
Electrode, to form optical microcavity, by performing etching processing to substrate to meet different emission wavelength pixels to microcavity chamber
Long different demands, while being arranged using insulating layer as the isolation of different pixels point, to realize that the independent of single pixel point is sent out
Light requirement, while realizing the enhancing of monochromaticjty and luminous efficiency that microcavity effect shines to device；Further, the present invention is also excellent
The micro-cavity structure of device is changed, and has simplified technical process, be integrally improved the integrated level of device, the preparation for reducing device is difficult
Degree.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect range.
Claims (10)
1. a kind of top emitting white light quanta point FET device, which is characterized in that including stack successively substrate, first
Electrode, insulating layer, second electrode, quantum dot light emitting layer and third electrode, the substrate is etched into tool in advance, and there are three different
The surface of height is provided at the stepped locations that adjacent different height surface is formed and upwardly extends until with the third electrode
The first dielectric isolation layer and the second dielectric isolation layer of lower surface contact, the first electrode are to be totally reflected electrode, described second
Electrode is transparent electrode, and the third electrode is semitransparent electrode.
2. top emitting white light quanta point FET device according to claim 1, which is characterized in that described second
Be additionally provided with hole transmission layer between electrode and the quantum dot light emitting layer, the third electrode and the quantum dot light emitting layer it
Between be additionally provided with electron transfer layer.
3. top emitting white light quanta point FET device according to claim 1, which is characterized in that the quantum
Point luminescent layer includes red light quantum point luminescent layer, green light quantum point luminescent layer and blue light quantum point luminescent layer.
4. top emitting white light quanta point FET device according to claim 1, which is characterized in that the quantum
The thickness of point luminescent layer is 10-100nm.
5. top emitting white light quanta point FET device according to claim 1, which is characterized in that the insulation
The material of layer, the first dielectric isolation layer and the second dielectric isolation layer is organic polymer material.
6. top emitting white light quanta point FET device according to claim 2, which is characterized in that the top hair
Penetrate white light quanta point FET device be eurymeric structure, including stack successively from bottom to up substrate, first electrode, absolutely
Edge layer, second electrode, hole transmission layer, quantum dot light emitting layer, electron transfer layer and third electrode, the second electrode are sun
Pole, third electrode are cathode.
7. top emitting white light quanta point FET device according to claim 2, which is characterized in that the top hair
Penetrate white light quanta point FET device be reciprocal form structure, including stack successively from bottom to up substrate, first electrode, absolutely
Edge layer, second electrode, electron transfer layer, quantum dot light emitting layer, hole transmission layer and third electrode, the second electrode are the moon
Pole, third electrode are anode.
8. the top emitting white light quanta point FET device described according to claim 6 or 7, which is characterized in that described
The material of electron transfer layer is N-shaped ZnO, TiO2、SnO、Ta2O3、AlZnO、ZnSnO、InSnO、Alq3、Ca、Ba、CsF、LiF、
CsCO3In it is one or more.
9. the top emitting white light quanta point FET device described according to claim 6 or 7, which is characterized in that described
The material of hole transmission layer is one or more in PVK, Poly-TPD and TFB.
10. a kind of preparation method of top emitting white light quanta point FET device, which is characterized in that including step：
A, substrate is etched into tool there are three the surface of different height in advance, the surface of adjacent different height forms ladder position；
B, the first electrode of noncontinuity is deposited on the surface of three different heights of the substrate；
C, the first electrode surface be coated with insulating materials, and by etching processing first electrode surface formed insulating layer with
And the first dielectric isolation layer and the second dielectric isolation layer are formed at the stepped locations；
D, second electrode is deposited in the surface of insulating layer；
E, quantum dot light emitting layer is deposited in the second electrode surface；
F, third electrode is deposited in the quantum dot light emitting layer surface.
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