CN108461516A - A kind of three terminal voltage of single-chip integration regulation and control luminescent device and preparation method thereof - Google Patents
A kind of three terminal voltage of single-chip integration regulation and control luminescent device and preparation method thereof Download PDFInfo
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- 230000010354 integration Effects 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 230000005669 field effect Effects 0.000 claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000005192 partition Methods 0.000 claims abstract description 8
- 230000012010 growth Effects 0.000 claims description 13
- 238000004020 luminiscence type Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 210000002421 cell wall Anatomy 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 99
- 229910002601 GaN Inorganic materials 0.000 description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 32
- 230000003287 optical effect Effects 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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Abstract
The invention discloses a kind of three terminal voltages of single-chip integration to regulate and control luminescent device, belongs to technical field of semiconductor device, including substrate, further includes：The Light-Emitting Diode and vertical field-effect transistor of vertical structure；The Light-Emitting Diode is equipped with positive electrode, and the vertical field-effect transistor is equipped with source electrode and gate electrode；The Light-Emitting Diode and vertical field-effect transistor is set up in parallel above the substrate and is equipped with partition portion between Light-Emitting Diode and vertical field-effect transistor；The light emitting diode has the common n-type semiconductor conductive layer for providing and being electrically connected between the two with vertical field-effect transistor.A kind of three terminal voltage of single-chip integration regulation and control luminescent device of the present invention has the characteristics that small, control is accurate, good compatibility.The invention also discloses the preparation methods that a kind of three terminal voltage of single-chip integration regulates and controls luminescent device, have the characteristics that preparation process is simple and reliable.
Description
Technical field
The present invention relates to technical field of semiconductor device, more specifically more particularly to a kind of three terminal voltage of single-chip integration
Regulate and control luminescent device.The present invention also relates to a kind of preparation method of three terminal voltage of single-chip integration regulation and control luminescent device.
Background technology
GaN (gallium nitride) be used to prepare blue light-emitting diode (LED), have high brightness, high energy efficiency, service life long
And the advantages that fast response time, bring revolutionary change for illumination application.However, LED is current control device, periphery
Drive control circuit structure is relative complex and is to be built (mainly to convert including AC-DC by discrete electronic device mostly
Circuit, current source and pulse width modulation circuit etc.), volume is relatively large, and can introduce higher dead resistance, capacitance and
The performances such as the parameters such as inductance, working frequency and efficiency are also far from being optimal, greatly restrict LED in visible optical communication and
The development and functionization in the fields such as micro display, such as the promotion of visible light communication system message transmission rate receive existing LED
The low limitation of module working frequency；Secondly, applications of the LED in the novel micro display system such as consumer electronics, wearable device
Many new requirements, such as single pixel point independent control, faster actuating speed, height are proposed to its peripheral driver control circuit
Efficiency and micromation and integrated etc..
The electricity for many brilliances such as GaN base field-effect transistor has current density big, and breakdown voltage is high, and switching frequency is fast
Performance, can be fabulous meet the needs of high performance lED driving control system is to switching device.By in GaN base LED chip
The GaN FET devices needed for structure LED drive control circuits are prepared, it can be traditional LED by current controller
Part is changed into voltage-controlled device, improves control and light modulation (Dimming) pattern of LED, so as to simplify driving circuit and system
Design complexities, significantly reduction system volume, reduce parasitic parameter, simplify encapsulating structure, improve system running frequency and
Efficiency.Patent document 1 [Chinese patent application publication number CN106549031A] and [the Chinese patent application publication number of patent document 2
CN 105914218A] propose the strategy of monolithic integrated LED and GaN high electron mobility transistor (HEMT) respectively, but by
It is vertical structure device in LED, and HEMT is lateral structure device, the poor compatibility of the two, and the complexity of integrated technique is very high.
Invention content
The previous of the present invention is designed to provide a kind of three terminal voltage of single-chip integration regulation and control luminescent device, have it is small,
The characteristics of control is accurate, good compatibility.
Another object of the present invention is to provide the preparation method that a kind of three terminal voltage of single-chip integration regulates and controls luminescent device, tools
Have the characteristics that preparation process is simple and reliable.
The previous technical solution of the present invention is as follows：
A kind of three terminal voltage of single-chip integration regulation and control luminescent device, including substrate further include：The Light-Emitting Diode of vertical structure
And vertical field-effect transistor；The Light-Emitting Diode is equipped with positive electrode, and the vertical field-effect transistor sets active electrical
Pole and gate electrode；The Light-Emitting Diode and vertical field-effect transistor is set up in parallel above the substrate and shines two
It is equipped with partition portion between grade pipe and vertical field-effect transistor；The light emitting diode has with vertical field-effect transistor to be carried
For the common n-type semiconductor conductive layer being electrically connected between the two.
Further, the vertical field-effect transistor at least includes n-type semiconductor conductive layer, more successively from bottom to top
Mqw light emitting layer, p-type semiconductor conductive layer and n-type semiconductor contact layer, the source electrode are located at n-type semiconductor contact layer
On, grid recess is equipped in each layer, the gate electrode is located in the grid recess and cell wall is equipped with the grid electrode insulating
The gate dielectric layer of isolation.
Further, the grid recess is longitudinally extended, through the multi-quantum well luminescence layer, p-type semiconductor conductive layer
With n-type semiconductor contact layer, n-type semiconductor conductive layer top is reached.
Further, the Light-Emitting Diode at least includes n-type semiconductor conductive layer, multiple quantum wells successively from bottom to top
Luminescent layer, p-type semiconductor conductive layer and current extending, the positive electrode are located on the current extending.
Further, the n-type semiconductor conductive layer is N-shaped GaN conductive layers, and the p-type semiconductor conductive layer is p
Type GaN conductive layers, the n-type semiconductor contact layer are N-shaped GaN contact layers.
Further, undoped GaN buffer layers are equipped between the substrate and N-shaped GaN conductive layers.
Further, the source electrode and n-type semiconductor contact layer are Ohmic contact, the current extending and p
Type semiconductor conducting layer is Ohmic contact.
Another technical solution of the present invention is as follows：
A kind of preparation method of three terminal voltage of single-chip integration regulation and control luminescent device, includes the following steps：
(1) substrate is provided；
(2) light emitting diode and the corresponding region of vertical field-effect transistor are marked off；By subregion growth or
Subregion etches to obtain the layer structure of light emitting diode and vertical field-effect transistor；
(3) portion's layered structure that light emitting diode and vertical field-effect transistor are cut off by etching obtains partition portion with shape
At mesa structure；
(4) grid recess is etched in the layer structure of vertical field-effect transistor, the etching depth of grid recess reaches N-shaped half
Conductor conductive layer；
(5) current extending and positive electrode are laid in the corresponding region of light emitting diode；
(6) it is laid with source electrode in the corresponding region of vertical field-effect transistor；
(7) gate dielectric layer and gate electrode are laid with.
Further, the behaviour of the layer structure of light emitting diode and vertical field-effect transistor is obtained in the step (2)
As：The layer knot of vertical field-effect transistor is grown in light emitting diode and the corresponding region of vertical field-effect transistor
Then structure is carved in the corresponding region overlay constituency etch mask of vertical field-effect transistor in the corresponding region of light emitting diode
Lose the layer structure of light emitting diode.
Further, the behaviour of the layer structure of light emitting diode and vertical field-effect transistor is obtained in the step (2)
As：The layer structure of light emitting diode is grown in light emitting diode and the corresponding region of vertical field-effect transistor, is being sent out
The region overlay selective area epitaxial growth mask of optical diode, then in the corresponding region further growth of vertical field-effect transistor
Go out the layer structure of remaining vertical field-effect transistor.
The device have the advantages that being：
1. a kind of the shining for three terminal voltage of single-chip integration regulation and control luminescent device of the present invention is realized by its light emitting diode, send out
The regulation and control of luminous intensity are realized by its vertical field-effect transistor；Wherein positive electrode and source electrode are respectively as the input of electric current and defeated
Exit port, gate electrode voltage flow through light emitting diode by regulating and controlling the turn-on and turn-off of vertical field-effect transistor raceway groove to control
Electric current, and then realize and the direct voltage of device luminous intensity regulated and controled；Pass through single chip integrated light emitting diode and perpendicualr field
Effect transistor structure forms three terminal device, realizes and regulates and controls to the direct voltage of device luminous intensity, not only has control essence
Really, the advantages that parasitic capacitance and resistance are small, response frequency is fast, and can peripheral circuits, reduction be in practical applications
System encapsulation complexity, reduces device volume；Meanwhile by being the Light-Emitting Diode and vertical field-effect crystalline substance of vertical structure device
Body pipe, the compatible higher in the two inside keep the regulating and controlling voltage of three terminal voltage of single-chip integration regulation and control luminescent device relatively reliable；
2. a kind of preparation method of three terminal voltage of single-chip integration regulation and control luminescent device of the present invention is operated in vertical direction, with
A kind of three terminal voltage of single-chip integration of the present invention regulates and controls luminescent device highly compatible, has the characteristics that preparation process is simple and reliable, from
And ensure the low cost of three terminal voltage of single-chip integration regulation and control luminescent device of the invention from production stage.
Description of the drawings
In order to illustrate more clearly of the embodiment of the present invention or technical solution in the prior art, below will to embodiment or
Attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
The embodiment of the present invention for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is that a kind of three terminal voltage of single-chip integration of the embodiment of the present invention regulates and controls the schematic diagram of luminescent device；
A kind of light output of three terminal voltage of single-chip integration regulation and control luminescent device of Fig. 2 present invention is with grid voltage change curve
Figure；
Fig. 3 is the preparation flow figure (step 2 method one) of the embodiment of the present invention；
Fig. 4 is the preparation flow figure (step 2 method two) of the embodiment of the present invention；
Fig. 5 is the preparation flow figure (step 3) of the embodiment of the present invention；
Fig. 6 is the preparation flow figure (step 4) of the embodiment of the present invention；
Fig. 7 is the preparation flow figure (step 5) of the embodiment of the present invention；
Fig. 8 is the preparation flow figure (step 6) of the embodiment of the present invention.
Wherein：The undoped GaN buffer layers of 101- substrates, 102-, 103-n types semiconductor conducting layer, 104- multiple quantum wells hair
Photosphere, 105-p types semiconductor conducting layer, 106-n types semiconductor contact layer, 107- current extendings, 108- positive electrodes, the sources 109-
Electrode, 110- gate dielectric layers, 111- gate electrodes, the constituencies 112- etch mask, 113- selective area epitaxial growths mask, 114- partitions
Portion.
Specific implementation mode
With reference to embodiment, technical scheme of the present invention is described in further detail, but do not constituted pair
Any restrictions of the present invention.
Embodiment
As shown in Figure 1, a kind of three terminal voltage of single-chip integration of the present invention regulates and controls luminescent device, including substrate 101, also wrap
It includes：The Light-Emitting Diode and vertical field-effect transistor of vertical structure；Light-Emitting Diode is equipped with positive electrode 108, vertical field-effect
Transistor is equipped with source electrode 109 and gate electrode 111；Light-Emitting Diode and vertical field-effect transistor the top of substrate 101 simultaneously
Row are arranged and are equipped with partition portion 114 between Light-Emitting Diode and vertical field-effect transistor；Light emitting diode and vertical field-effect
Transistor has the common n-type semiconductor conductive layer 103 for providing and being electrically connected between the two.
In the present embodiment, vertical field-effect transistor at least includes n-type semiconductor conductive layer 103, more successively from bottom to top
Mqw light emitting layer 104, p-type semiconductor conductive layer 105 and n-type semiconductor contact layer 106, source electrode 109 are located at n-type semiconductor
On contact layer 106, grid recess is equipped in each layer, gate electrode 111 is located in the grid recess and cell wall is equipped with and gate electrode 111 insulate
The gate dielectric layer 110 of isolation.Grid recess is longitudinally extended, through the multi-quantum well luminescence layer 104, p-type semiconductor conductive layer 105
With n-type semiconductor contact layer 106,103 top of n-type semiconductor conductive layer is reached.
In the present embodiment, Light-Emitting Diode at least includes n-type semiconductor conductive layer 103, multiple quantum wells successively from bottom to top
Luminescent layer 104, p-type semiconductor conductive layer 105 and current extending 107, positive electrode 108 are located on current extending 107.
A kind of the shining for three terminal voltage of single-chip integration regulation and control luminescent device of the present invention is realized by its light emitting diode, shines
The regulation and control of intensity are realized by its vertical field-effect transistor；The wherein input of positive electrode 108 and source electrode 109 respectively as electric current
And output port, 111 voltage of gate electrode flow through hair by regulating and controlling the turn-on and turn-off of vertical field-effect transistor raceway groove to control
The electric current of optical diode, and then realize and the direct voltage of device luminous intensity is regulated and controled.Pass through single chip integrated light emitting diode
With vertical field-effect transistor structure, three terminal device is formed, realizes and the direct voltage of device luminous intensity is regulated and controled, not only have
The advantages that control is accurate, parasitic capacitance and resistance are small, response frequency is fast, and can peripheral circuits in practical applications,
Reduction system encapsulates complexity, reduces device volume.Meanwhile by being the Light-Emitting Diode and perpendicualr field of vertical structure device
Effect transistor, the two have compatibility inside higher, make the regulating and controlling voltage of three terminal voltage of single-chip integration regulation and control luminescent device
It is relatively reliable.
As shown in Fig. 2, it regulates and controls the optical output power of luminescent device with grid electricity for three terminal voltage of single-chip integration of the present invention
111 voltage change curve of pole, abscissa are the bias voltage of gate electrode 111, and left side ordinate, which is optical output power, right side is vertical sits
It is designated as diode internal current, the bigger optical output power of the bias voltage of gate electrode 111 is bigger in a certain range.More carefully
Ground, when the electrode either between source electrode 109 and positive electrode 108 is 5V (mark triangle curve) or 10V (mark circular curve),
As the voltage between gate electrode 111 and source electrode 109 increases, the inside of optical output power (hollow graph curve) and diode
Electric current (solid object curve) is bigger.It can be seen that three terminal voltage of single-chip integration regulation and control luminescent device of the present invention is luminous strong
Degree can be directly by the voltage Effective Regulation between gate electrode 111 and source electrode 109.
In the present embodiment, n-type semiconductor conductive layer 103 is N-shaped GaN conductive layers, and p-type semiconductor conductive layer 105 is p-type
GaN conductive layers, n-type semiconductor contact layer 106 are N-shaped GaN contact layers, make three terminal voltage of single-chip integration regulation and control luminescent device tool
The advantages of having high brightness, high energy efficiency, service life long and fast response time.
In the present embodiment, gate dielectric layer 110 is that can be situated between as insulation barrier and the single-layer or multi-layer of device passivation layer
Material.The gate dielectric layer 110 selected in the present embodiment is Al2O3(aluminium oxide).
In the present embodiment, undoped GaN buffer layers 102 are equipped between substrate 101 and N-shaped GaN conductive layers.GaN material exists
Grown can have lattice mismatch and thermal mismatching, and undoped GaN buffer layers 102 can be adjusted, to realize height
The growth of the material layer structures of quality.
A kind of preparation method of three terminal voltage of single-chip integration regulation and control luminescent device of the present invention, includes the following steps：
(1) substrate 101 is provided；
(2) light emitting diode and the corresponding region of vertical field-effect transistor are marked off；By subregion growth or
Subregion etches to obtain the layer structure of light emitting diode and vertical field-effect transistor, and in the present embodiment, left side is perpendicualr field effect
It is the corresponding region of light emitting diode to answer the corresponding region of transistor, right side；
(3) as shown in figure 5, cutting off portion's layered structure (packet of light emitting diode and vertical field-effect transistor by etching
Include multi-quantum well luminescence layer 104 and p-type semiconductor conductive layer 105) partition portion 114 is obtained to be respectively formed light emitting diode and hang down
The mesa structure of straight field-effect transistor；
(4) as shown in fig. 6, etching grid recess in the layer structure of vertical field-effect transistor, the etching of grid recess is deep
Degree reaches n-type semiconductor conductive layer 103；
(5) as shown in fig. 7, being laid in the corresponding zone current extension layer 107 of light emitting diode and positive electrode 108：It is sending out
Current extending 107 and positive electrode 108 are laid on the mesa structure of optical diode successively, current extending 107 is made partly to be led with p-type
105 Ohmic contact of body conductive layer；
(6) as shown in figure 8, being laid in the corresponding region source electrode 109 of vertical field-effect transistor：In vertical field-effect crystalline substance
It is laid with source electrode 109 on the mesa structure of body pipe, makes source electrode 109 and 106 Ohmic contact of n-type semiconductor contact layer；
(7) gate dielectric layer and gate electrode 111 are laid with：It is laid with gate dielectric layer 110 and gate electrode 111 successively in grid recess.
In the present embodiment, the operation packet of the layer structure of light emitting diode and vertical field-effect transistor is obtained in step (2)
The one of which for including following methods is respectively：
Method (one) in light emitting diode and the corresponding region of vertical field-effect transistor as shown in figure 3, grow vertical
Then the layer structure of straight field-effect transistor exists in the corresponding region overlay constituency etch mask 112 of vertical field-effect transistor
The corresponding region etch of light emitting diode goes out the layer structure of light emitting diode.
Grow undoped GaN buffer layers 102, N-shaped GaN conductive layers, multi-quantum well luminescence layer successively on substrate 101
104, p-type GaN conductive layers and N-shaped GaN contact layers；The corresponding area of vertical field-effect transistor in the side of N-shaped GaN contact layers
Domain covers constituency etch mask 112, and the corresponding region of light emitting diode of the other side exposes partially n-type GaN contact layers, to sudden and violent
The further constituency in part of exposing, which etches into, exposes p-type GaN conductive layers, is respectively formed vertical field-effect transistor and luminous two
The corresponding region of pole pipe.
Method (two) is as shown in figure 4, growing and setting out in light emitting diode and the corresponding region of vertical field-effect transistor
The layer structure of optical diode, in the region overlay selective area epitaxial growth mask 113 of light emitting diode, then in vertical field-effect crystalline substance
The corresponding region further growth of body pipe goes out the layer structure of remaining vertical field-effect transistor.
Grow undoped GaN buffer layers 102, N-shaped GaN conductive layers, multi-quantum well luminescence layer successively on substrate 101
104 and p-type GaN conductive layers；The corresponding region overlay selective area epitaxial growth of light emitting diode in p-type GaN conductive layers side is covered
Film 113, covering part p-type GaN conductive layers 105, the corresponding region unmasked portion of vertical field-effect transistor of the other side into
One step selective area growth N-shaped GaN contact layers, are respectively formed light emitting diode and the corresponding region of vertical field-effect transistor.
A kind of preparation method of three terminal voltage of single-chip integration regulation and control luminescent device of the present invention is operated in vertical direction, with this
A kind of three terminal voltage of single-chip integration regulation and control luminescent device highly compatible is invented, has the characteristics that preparation process is simple and reliable, to
Ensure the low cost of three terminal voltage of single-chip integration regulation and control luminescent device of the invention from production stage.
What has been described above is only a preferred embodiment of the present invention, it should be pointed out that for those skilled in the art,
Without departing from the structure of the invention, luminescent device and preparation method thereof can also be regulated and controled to this three terminal voltage of single-chip integration
Several modifications and improvements are made, these all do not interfere with the effect and patent practicability that the present invention is implemented.
Claims (10)
1. a kind of three terminal voltage of single-chip integration regulates and controls luminescent device, including substrate (101)；It is characterized in that, further including：Vertical junction
The Light-Emitting Diode and vertical field-effect transistor of structure；The Light-Emitting Diode is equipped with positive electrode (108), the perpendicualr field
Effect transistor is equipped with source electrode (109) and gate electrode (111)；The Light-Emitting Diode and vertical field-effect transistor is in institute
It states and is set up in parallel above substrate (101) and is equipped with partition portion (114) between Light-Emitting Diode and vertical field-effect transistor；Institute
The light emitting diode stated has the common n-type semiconductor for providing and being electrically connected between the two conductive with vertical field-effect transistor
Layer (103).
2. three terminal voltage of a kind of single-chip integration according to claim 1 regulates and controls luminescent device, which is characterized in that described hangs down
Straight field-effect transistor at least includes n-type semiconductor conductive layer (103), multi-quantum well luminescence layer (104), p successively from bottom to top
Type semiconductor conducting layer (105) and n-type semiconductor contact layer (106), the source electrode (109) are located at n-type semiconductor contact
On layer (106), grid recess is equipped in each layer, the gate electrode (111) is located in the grid recess and cell wall is equipped with institute
State the gate dielectric layer (110) that gate electrode (111) is dielectrically separated from.
3. three terminal voltage of a kind of single-chip integration according to claim 2 regulates and controls luminescent device, which is characterized in that the grid
Groove is longitudinally extended, through the multi-quantum well luminescence layer (104), p-type semiconductor conductive layer (105) and n-type semiconductor contact
Layer (106) reaches n-type semiconductor conductive layer (103) top.
4. three terminal voltage of a kind of single-chip integration according to claim 2 regulates and controls luminescent device, which is characterized in that the hair
Light diode is at least partly led including n-type semiconductor conductive layer (103), multi-quantum well luminescence layer (104), p-type successively from bottom to top
Body conductive layer (105) and current extending (107), the positive electrode (108) are located on the current extending (107).
5. three terminal voltage of a kind of single-chip integration according to claim 4 regulates and controls luminescent device, which is characterized in that the n
Type semiconductor conducting layer (103) is N-shaped GaN conductive layers, and the p-type semiconductor conductive layer (105) is p-type GaN conductive layers, institute
The n-type semiconductor contact layer (106) stated is N-shaped GaN contact layers.
6. three terminal voltage of a kind of single-chip integration according to claim 5 regulates and controls luminescent device, which is characterized in that the lining
Undoped GaN buffer layers (102) are equipped between bottom (101) and N-shaped GaN conductive layers.
7. three terminal voltage of a kind of single-chip integration according to claim 4 regulates and controls luminescent device, which is characterized in that the source
Electrode (109) is Ohmic contact with n-type semiconductor contact layer (106), and the current extending (107) is led with p-type semiconductor
Electric layer (105) is Ohmic contact.
8. the preparation method of three terminal voltage of the single-chip integration regulation and control luminescent device described in a kind of any one of claim 1 to 7,
It is characterized by comprising the following steps：
(1) substrate (101) is provided；
(2) light emitting diode and the corresponding region of vertical field-effect transistor are marked off；Pass through subregion growth or subregion
Domain etches to obtain the layer structure of light emitting diode and vertical field-effect transistor；
(3) cut off by etching light emitting diode and vertical field-effect transistor portion's layered structure obtain partition portion (114) with
Form mesa structure；
(4) grid recess is etched in the layer structure of vertical field-effect transistor, the etching depth of grid recess reaches n-type semiconductor
Conductive layer (103)；
(5) current extending (107) and positive electrode (108) are laid in the corresponding region of light emitting diode；
(6) it is laid with source electrode (109) in the corresponding region of vertical field-effect transistor；
(7) gate dielectric layer and gate electrode (111) are laid with.
9. three terminal voltage of a kind of single-chip integration according to claim 8 regulates and controls luminescent device, which is characterized in that the step
Suddenly the operation that the layer structure of light emitting diode and vertical field-effect transistor is obtained in (2) is：In light emitting diode and perpendicualr field
The corresponding region of effect transistor grows the layer structure of vertical field-effect transistor, corresponding in vertical field-effect transistor
Region overlay constituency etch mask (112) then goes out the layer structure of light emitting diode in the corresponding region etch of light emitting diode.
10. three terminal voltage of a kind of single-chip integration according to claim 8 regulates and controls luminescent device, which is characterized in that described
The operation that the layer structure of light emitting diode and vertical field-effect transistor is obtained in step (2) is：In light emitting diode and vertically
The corresponding region of field-effect transistor grows the layer structure of light emitting diode, outside the region overlay constituency of light emitting diode
Epitaxial growth mask (113) then goes out remaining vertical field-effect in the corresponding region further growth of vertical field-effect transistor
The layer structure of transistor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810301462.5A CN108461516A (en) | 2018-04-04 | 2018-04-04 | A kind of three terminal voltage of single-chip integration regulation and control luminescent device and preparation method thereof |
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| CN201810301462.5A CN108461516A (en) | 2018-04-04 | 2018-04-04 | A kind of three terminal voltage of single-chip integration regulation and control luminescent device and preparation method thereof |
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| CN108461516A true CN108461516A (en) | 2018-08-28 |
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| CN (1) | CN108461516A (en) |
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| CN111682043A (en) * | 2020-06-24 | 2020-09-18 | 京东方科技集团股份有限公司 | Chip structure, manufacturing method thereof and display device |
| CN113690267A (en) * | 2021-06-30 | 2021-11-23 | 河源市众拓光电科技有限公司 | Single-chip integration method of surface mount HEMT-LED |
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| CN106549031A (en) * | 2016-11-25 | 2017-03-29 | 复旦大学 | A kind of monolithic integrated device based on body GaN material and preparation method thereof |
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| CN106549031A (en) * | 2016-11-25 | 2017-03-29 | 复旦大学 | A kind of monolithic integrated device based on body GaN material and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682043A (en) * | 2020-06-24 | 2020-09-18 | 京东方科技集团股份有限公司 | Chip structure, manufacturing method thereof and display device |
| WO2021259356A1 (en) * | 2020-06-24 | 2021-12-30 | 京东方科技集团股份有限公司 | Chip structure and manufacturing method therefor, and display apparatus |
| CN111682043B (en) * | 2020-06-24 | 2022-12-02 | 京东方科技集团股份有限公司 | Chip structure, manufacturing method thereof and display device |
| CN113690267A (en) * | 2021-06-30 | 2021-11-23 | 河源市众拓光电科技有限公司 | Single-chip integration method of surface mount HEMT-LED |
| CN113690267B (en) * | 2021-06-30 | 2023-01-17 | 河源市众拓光电科技有限公司 | Single-chip integration method of surface mount HEMT-LED |
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Application publication date: 20180828 |