CN108461421A - Laser heat treatment equipment and the film crystallization method for utilizing the device - Google Patents
Laser heat treatment equipment and the film crystallization method for utilizing the device Download PDFInfo
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- CN108461421A CN108461421A CN201810094612.XA CN201810094612A CN108461421A CN 108461421 A CN108461421 A CN 108461421A CN 201810094612 A CN201810094612 A CN 201810094612A CN 108461421 A CN108461421 A CN 108461421A
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- laser
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- 238000002425 crystallisation Methods 0.000 title claims abstract description 44
- 238000010438 heat treatment Methods 0.000 title claims abstract description 20
- 230000001678 irradiating effect Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 61
- 230000008025 crystallization Effects 0.000 description 29
- 238000000034 method Methods 0.000 description 15
- 230000001965 increasing effect Effects 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
The embodiment of the present invention is related to a kind of laser heat treatment equipment and the film crystallization method using the device, wherein, first laser beam is irradiated to by processing film, and so that second laser beam is irradiated to by processing film by being reflected from the first laser beam by processing film reflector.At this point, keeping the second laser beam Chong Die at least part in region irradiated by the first laser beam.
Description
Technical field
The embodiment of the present invention is related to a kind of laser heat treatment equipment and the film crystallization method using the device, especially
It is related to a kind of to realize swashing for the effect for maintaining the effective width to crystallizing effective energy density and increasing laser beam
Photothermal treatment device and the film crystallization method for utilizing the device.
Background technology
In general, thin film transistor (TFT) used in semiconductor device or display device (thin film transistor) basis
The type of semiconductor layer and be divided into non-crystalline silicon (amorphous silicon) thin film transistor (TFT) and polysilicon
(polycrystalline silicon) thin film transistor (TFT).
The charge mobility of polycrystalline SiTFT is more than amorphous silicon film transistor, therefore is widely used.
Polysilicon can be manufactured by Direct precipitation, but can also be crystallized and be manufactured after deposited amorphous silicon.
Method as direct deposition of polycrystalline silicon can use chemical vapor deposition (Chemical Vapor
Deposition:CVD) method.It, can be with the following method as the method that will be crystallized after amorphous silicon deposition：Moment irradiation is made
Excimer laser for the excimer laser of height output pulse laser is heat-treated (Excimer Laser Annealing, ELA)
Method, in the inner solid phase crystallization (Solid Phase Crystallization, SPC) heated of reacting furnace (furnace)
Method, be optionally deposited metal after-applied electric field crystallization inducing metal (Metal Induced
Crystallization, MIC) method and succession lateral solidification (Sequential Lateral Solidification,
SLS) method etc..
Wherein, using the excimer laser heat treating process of the height output pulse laser of short wavelength, technique can be relatively low
In a low temperature of carry out, and crystallization rate is fast and crystallinity is outstanding, therefore is widely used.
Invention content
The embodiment of the present invention is designed to provide a kind of laser heat treatment equipment that can realize following effect：It maintains
To crystallizing effective energy density and increasing the effective width of laser beam.
It is able to maintain that productive another object of the present invention is to provide one kind while being increased to crystallization quality pre-
Determine the film crystallization method of level or more.
Laser heat treatment equipment according to an aspect of the present invention for achieving the above object includes：Platform supports shape
At having by the substrate of processing film, and move at a predetermined rate；Laser irradiating part, in the state that the platform moves, to
It is described that first laser beam is irradiated by processing film；And speculum, it will be anti-from the first laser beam by processing film reflector
It penetrates and so that second laser beam is irradiated to described by processing film, wherein the angle of reflection of the speculum, which can be adjusted into, makes institute
State second laser beam with it is described Chong Die by at least part in region of processing film irradiated by the first laser beam.
It is described by processing film by the region of first laser beam irradiation include central portion first area and point
Be not arranged in the second area of the both sides of the first area, the angle of reflection of the speculum can be adjusted into make it is described
At least part of second area is Chong Die with the second laser beam.
And the energy of the corresponding first laser beam of the second area can be less than corresponding with the first area
The energy of the first laser beam.
Relative to the direction of platform movement, the second area Chong Die with the second laser beam can be located at institute
It states before first area.
The 20% to 100% of the second area can be Chong Die with the second laser beam.
The first laser beam can be excimer laser beam, can be irradiated with pulse mode and line morphology.
The speculum can be formed by one in plane mirror and concave mirror.
Also, film crystallization method according to another aspect of the present invention for achieving the above object includes following step
Suddenly：Platform is installed on by the substrate of processing film by being formed with；The platform is set to move at a predetermined rate；It is handled to described
Film irradiates first laser beam；And will be reflected from the first laser beam by processing film reflector, to make second
Laser beam is irradiated to described by processing film, wherein the second laser beam is swashed by processing film by described first with described
At least part overlapping in the region of light beam irradiation.
Described by processing film may include non-crystalline silicon.
The first laser beam can be excimer laser beam, can be irradiated with pulse mode and line morphology.
The first laser beam can relative to the platform surface with the angular illumination less than 90 degree.
It is described by processing film by the region of first laser beam irradiation include central portion first area and point
It is not arranged in the second area of the both sides of the first area, at least part of the second area can swash with described second
Light beam is overlapped.
And the energy of the corresponding first laser beam of the second area can be less than corresponding with the first area
The energy of the first laser beam.
Relative to the direction of platform movement, the second area Chong Die with the second laser beam can be located at institute
It states before first area.
The 20% to 100% of the second area can be Chong Die with the second laser beam.
In the embodiment of the present invention, first laser beam is irradiated to by processing film, and will be from described by processing film reflector
First laser beam reflection and so that second laser beam is irradiated to by processing film.At this point, the second laser beam with by described the
At least part overlapping in the region of one laser beam irradiation.
Increase the effect of the effective width to crystallizing effective laser beam by realizing, crystallization quality can be improved
To more than predetermined level.Also, even if not adding equipment, crystallization quality can also be improved and maintain productivity.
Description of the drawings
Fig. 1 is the composition figure for illustrating laser heat treatment equipment according to an embodiment of the invention.
Fig. 2 a are the figures for the profile (profile) for showing first laser beam.
Fig. 2 b are the figures for the profile for showing second laser beam.
Fig. 3 a are to show that first laser beam is irradiated to by the stereogram of the state of processing film.
Fig. 3 b are to show that second laser beam is irradiated to by the stereogram of the state of processing film.
Fig. 4 is the plan view in the region for showing to be irradiated by first laser beam and second laser beam in by processing film.
Fig. 5 a and Fig. 5 b are the partial enlarged views of Fig. 4.
Fig. 6 a and Fig. 6 b are the figures for the profile for showing first laser beam and second laser beam.
Fig. 7 a and Fig. 7 b are the profiles of the first laser beam and second laser beam that show the comparative example for illustrating the present invention
Figure.
Fig. 8 and Figure 10 is the profile for showing first laser beam and second laser beam for illustrating the embodiment of the present invention
Figure.
Fig. 9 a and Fig. 9 b are the profiles of the first laser beam and second laser beam that show the comparative example for illustrating the present invention
Figure.
Figure 11 a and Figure 11 b are the wheels of the first laser beam and second laser beam that show the comparative example for illustrating the present invention
Wide figure.
Figure 12 is the composition figure for illustrating laser heat treatment equipment according to another embodiment of the present invention.
Figure 13 is the flow chart for illustrating film crystallization method according to an embodiment of the invention.
Symbol description
10：Platform (stage) 20：Laser irradiating part
30：Optical system 40：Speculum
50：Chamber 52：Transmissive window
100：Substrate 110：By processing film
112、114、116：The region irradiated by laser beam
Specific implementation mode
Hereinafter, the preferred embodiment of the present invention is described in detail with reference to attached drawing.Embodiment below is in order to make
In the art with basic knowledge personnel can fully understand the present invention and provide, and the embodiment can be deformed into it is more
Kind form, and the scope of the present invention is not limited to the embodiment of following record.
Fig. 1 is the composition figure for illustrating laser heat treatment equipment according to an embodiment of the invention.
Referring to Fig.1, laser heat treatment equipment may include：Platform 10, support are formed with by the substrate of processing film 110
100, and move at a predetermined rate；Laser irradiating part 20 irradiates in the state that platform 10 moves to by processing film 110
First laser beam L1；And speculum 40, second will be made to swash from the first laser beam L1 ' reflections reflected by processing film 110
Light beam L2 is irradiated to by processing film 11.
Platform 10 is configured to can to make substrate 100 to be supported and fixed plate form.Platform 10 is configured to
It is moved to a direction or both direction by means of transfer unit (not shown).
Laser irradiating part 20 can be configured at the top of platform 10, for example, being configured to generate excimer laser beam simultaneously
Output.The excimer laser beam can be to have the frequency of hundreds of hertz (Hz) and several watts (watt) to several hectowatt
The pulse mode of energy exports.
For facility, it is assumed that the laser beam exported from laser irradiating part 20 is first laser beam L1, then first laser beam L1
Can shine directly into platform 10 by processing film 110, or speculum or lens by being used as predetermined optical system 30
Deng and be irradiated to platform 10 by processing film 110.
Speculum 40 is configured to, and second will be made to swash from the first laser beam L1 ' reflections reflected by processing film 110
Light beam L2 is irradiated to by processing film 110.
Speculum 40 can be made of plane mirror or concave mirror, and angle of reflection can be adjusted to, and enable second laser beam L2
It is Chong Die at least part in region irradiated by first laser beam L1.For example, it is also possible to include so that 40 edge of speculum can be made
The driving unit (not shown) that x-axis, y-axis, the mode of z-axis direction movement are constituted.
Fig. 2 a are the figures for the profile (profile) for schematically showing first laser beam L1, and Fig. 2 b are to schematically show
The figure of the profile of second laser beam L2.In the accompanying drawings, horizontal axis indicates that the width of laser beam, the longitudinal axis indicate the energy of laser beam.
In general, the cross section profile of laser beam can have the both sides pair on the basis of the central shaft in direction for irradiating laser beam
The form of title.May include：First area is arranged symmetrically on the basis of the central shaft in central portion, and is had and compared
Constant energy；Second area, is arranged in the both sides of the first area, and energy gradually subtracts with peripheral portion is intended to
It is few.
With reference to Fig. 2 a, first laser beam L1 is symmetrical on the basis of central shaft, for example, may include having the first ENERGY E 1
Two first area a and be arranged in first area a both sides and energy with tend to peripheral portion and gradually decrease
Two second area b.Second area b can be arranged to be mutually symmetrical on the basis of the central shaft, and can have and be less than
The width of first area a.
With reference to Fig. 2 b, second laser beam L2 is symmetrical on the basis of central shaft, for example, may include having to be less than the first energy
Measure E1 the second ENERGY E 2 two first area a and be arranged in first area a both sides and energy with tend to week
Edge and the two second area b gradually decreased.Second area b can be arranged to right each other on the basis of the central shaft
Claim, and there can be the width less than first area a.
The width (2a+2b) of second laser beam L2 can be identical as width (2a+2b) of first laser beam L1, but due to
By the reflectivity of processing film 110, the first ENERGY E 1 that the second ENERGY E 2 of second laser beam L2 may be than first laser beam L1
It is small.
Fig. 3 a are to show that first laser beam L1 is irradiated to by the stereogram of the state of processing film 110, and Fig. 3 b are to show
Dual-laser beam L2 is irradiated to by the stereogram of the state of processing film 110.
Referring to Fig.1 and Fig. 3 a, in the state that platform 10 moves at a predetermined velocity, first laser beam L1 can be irradiated to by
Handle film 110.
First laser beam L1 is preferably the surface relative to platform 10 with the angular illumination less than 90 degree, for example, can be with
It is irradiated with scheduled width and the line morphology of length.
Fig. 3 a show the situation that first laser beam L1 irradiates in the form of by light harvesting, but not limited to this, it as needed, can
To be adjusted to the form of diverging or parallel form in the form of irradiating first laser beam L1 using optical system etc..
The width and length of first laser beam L1 can be adjusted according to the performance of laser irradiating part 20, but in order to obtain
The size (width or length) of required energy density, first laser beam L1 can be limited.
Referring to Fig.1 and Fig. 3 b, in the state that platform 10 moves at a predetermined rate, second laser beam L2 can be irradiated to
By processing film 110.
Second laser beam L2 for example can be to irradiate with the line morphology of width corresponding with first laser beam L1 and length.
The irradiating angle of second laser beam L2 can be adjusted according to the angle of reflection of speculum 40.Adjusting can be passed through
The angle of reflection of speculum 40 and by second laser beam L2 with Chong Die at least part in region irradiated by first laser beam L1
Mode irradiate.
Fig. 4 is shown respectively in by processing film 110 by the region of first laser beam L1 and the L2 irradiations of second laser beam
Plan view.
Referring to Fig.1 and Fig. 4, by make second laser beam L2 with the region 112 irradiated by first laser beam L1 at least
The mode of part overlapping is irradiated, so as to by processing film 110 formed by the region 112 of first laser beam L1 irradiation with
By the region 116 of the overlapping in the region 114 of second laser beam L2 irradiations.
While platform 10 moves at a predetermined rate, first laser beam L1 and second laser beam L2 are irradiated to are located successively
Film 110, therefore the direction moved relative to platform 10 are managed, the region 116 of the overlapping can be before the region 112
Face.It that is, relative to the direction that platform 10 moves, can be sequentially arranged before platform 10, irradiated by second laser beam L2
Region 114, overlapping region 116 and by the region 112 of first laser beam L1 irradiation.
Also, while platform 10 moves at a predetermined rate, first laser beam L1 and second laser beam L2 irradiate successively
To by processing film 110, therefore can be by the above process and to being heat-treated by the entire surface of processing film 110.
In Fig. 4, the direction position that the region 116 of the overlapping is moved relative to platform 10 is shown as one embodiment
Situation before the region 112, but in another embodiment can be with if adjusting the angle of reflection of speculum 40
The region 116 of the overlapping is set to be located at behind the region 112.
Fig. 5 a and Fig. 5 b are the plan views of a part for the region (112 and 114) shown in enlarged drawing 4, Fig. 6 a and
Fig. 6 b are the figures for the profile for showing first laser beam L1 and second laser beam L2.In Fig. 6 a and Fig. 6 b, horizontal axis indicates laser beam
Width, the longitudinal axis indicate the energy of laser beam.
Fig. 5 a are comparative example, are shown by the region 112 of first laser beam L1 irradiations and by the area of second laser beam L2 irradiations
114 nonoverlapping situation of domain.Fig. 5 b are the embodiment of the present invention, are shown by the region 112 of first laser beam L1 irradiation and by the
The region 114 of dual-laser beam L2 irradiations partly overlaps and is formed the situation in the region 116 of overlapping.
The region 112 includes the first area 112a corresponding to the first area a of first laser beam L1 and corresponds to
The second area 112b of the second area b of first laser beam L1.Also, the region 114 includes corresponding to second laser beam L2
First area a first area 114a and second area b corresponding to second laser beam L2 second area 114b.
With reference to Fig. 5 a and Fig. 6 a, with the first ENERGY E 1 first laser beam L1 and with the less than the first ENERGY E 1
In the case that the second laser beam L2 of two ENERGY Es 2 is respectively radiated to different zones (112 and 114), with first laser beam L1
The first area 112a of the corresponding central portions of one region a can be adequately heat-treated by means of the first ENERGY E 1, still
The second area 112b of peripheral portion corresponding with the second area b of first laser beam L1 is possible to due to less energy at heat
Reason is insufficient.
With reference to Fig. 5 b and Fig. 6 b, by the region 112 of the first laser beam L1 irradiations with the first ENERGY E 1 and by with
In the case of partly overlapping less than the regions 114 irradiated the second laser beam L2 of the second ENERGY E 2 of the first ENERGY E 1, it is being overlapped
Region 116, the increase (with reference to the X section of Fig. 6 b) of the energy caused by being heat-treated twice, the with first laser beam L1
The heat treatment degree of the second area 112b of the corresponding peripheral portions of two region b can be improved.In Fig. 6 b, thick line is indicated whole
Energy distribution in a region (112,114 and 116).
According to an embodiment of the invention, second laser beam L2 can with the region 112 irradiated by first laser beam L1
The mode of at least part overlapping is irradiated, in particular, it is preferred that irradiation is the secondth area with the region 112 irradiated by first laser beam L1
20% to 100% overlapping of domain 112b.
For example, by adjusting the angle of reflection of speculum 40 by the driving unit (not shown) for being connected to speculum 40,
The degree of the overlapping can be adjusted.
With reference to Fig. 5 b and Fig. 6 b, in the case, from the central shaft of first laser beam L1 to the center of second laser beam L2
The distance of axis can be 2a+b to 2a+1.8b or so.That is, compared to the crystallization process merely with first laser beam L1, have
The effective width of laser beam obtains increased effect, therefore can increase effectively crystallization area.
If second laser beam L2 is laminated in less than by the second area 112b's in the region 112 of first laser beam L1 irradiations
20% area, then as shown in Figure 7a, the energy of laser beam (L1 and L2) corresponding with the region 116 of overlapping are less than to crystallization
Effective energy, therefore crystallize and possibly can not sufficiently carry out.Also, if second laser beam L2 is overlapped to more than by first
100% area of the second area 112b in the region 112 of laser beam L1 irradiation, that is, second laser beam L2 with by first laser
In the case of the part overlapping of the second area 112b and first area 112a in the region 112 of beam L1 irradiations, such as Fig. 7 b institutes
Show, the energy of laser beam (L1 and L2) corresponding with the region 116 of overlapping is more than to crystallizing effective energy (for example, first
ENERGY E 1), so as to carry out excessive crystallization.
In the described embodiment, with the mutually the same situation of the width (a and b) of first laser beam L1 and second laser beam L2
For be illustrated, but the width of second laser beam L2 can be made as needed by adjusting mechanical condition and optical condition by
Width of the degree more than or less than first laser beam L1, for example, the distance between adjustable platform 10 and speculum 40, or flat
Optical system (not shown), or curvature of adjusting speculum 40 etc. are added between platform 10 and speculum 40 and adjust second laser
The width of beam L2.
First, the situation of the width by Fig. 8 to the width of second laser beam L2 less than first laser beam L1 illustrates.
With reference to Fig. 8, first laser beam L1 is symmetrical on the basis of central shaft, for example, may include having the first ENERGY E 1
Two first area a and be arranged in the both sides of first area a and energy is gradually decreased with peripheral portion is tended to
Two second area b.
Also, second laser beam L2 is symmetrical on the basis of central shaft, for example, may include having to be less than the first ENERGY E 1
The second ENERGY E 2 two first area c and be arranged in first area c both sides and energy with tending to peripheral portion
And the two second area d gradually decreased.The width of the first area c and second area d of second laser beam L2 are less than first and swash
The width of the first area a and second area b of light beam L1.
In the case, can be a+ to the distance of the central shaft of second laser beam L2 from the central shaft of first laser beam L1
B+c to a+0.8b+c+d or so.That is, compared to the crystallization process merely with first laser beam L1, laser beam can be embodied
The increased effect of effective width, therefore effectively crystallization area can be increased.
If second laser beam L2 is laminated in less than by the second area 112b's in the region 112 of first laser beam L1 irradiations
20% area, then as illustrated in fig. 9, the energy of laser beam (L1 and L2) corresponding with the region 116 of overlapping are less than to crystallization
Effective energy, therefore crystallize and possibly can not sufficiently carry out.Also, if second laser beam L2 is laminated in more than by first
100% area of the second area 112b in the region 112 of laser beam L1 irradiations, then as shown in figure 9b, with overlapping region 116
The energy of corresponding laser beam (L1 and L2) be more than to crystallizing effective energy (for example, first ENERGY E 1), so as into
The excessive crystallization of row.
Then, the situation of the width by Figure 10 to the width of second laser beam L2 more than first laser beam L1 is said
It is bright.
Referring to Fig.1 0, first laser beam L1 is symmetrical on the basis of central shaft, for example, may include having the first ENERGY E 1
Two first area a and be arranged in the both sides of first area a and energy is gradually decreased with peripheral portion is tended to
Two second area b.
Also, second laser beam L2 is symmetrical on the basis of central shaft, for example, may include having to be less than the first ENERGY E 1
The second ENERGY E 2 two first area c and be arranged in first area c both sides and energy with tending to peripheral portion
And the two second area d gradually decreased.The width of the first area c and second area d of second laser beam L2 are more than first and swash
The width of the first area a and second area b of light beam L1.
In the case, can be a+ to the distance of the central shaft of second laser beam L2 from the central shaft of first laser beam L1
C+d to a+b+c+0.8d or so.That is, compared to the crystallization process merely with first laser beam L1, it is effective with laser beam
The increased effect of width, therefore effectively crystallization area can be increased.
If second laser beam L2 is laminated in less than by the second area 112b's in the region 112 of first laser beam L1 irradiations
20% area, then as shown in fig. 11a, the energy of laser beam (L1 and L2) corresponding with the region 116 of overlapping are less than to crystallization
Change effective energy, therefore crystallizes and possibly can not sufficiently carry out.Also, if second laser beam L2 is laminated in more than by the
100% area of the second area 112b in the region 112 of one laser beam L1 irradiations, then as shown in figure 11b, with overlapping region
The energy of 116 corresponding laser beams (L1 and L2) be more than to crystallizing effective energy (for example, first ENERGY E 1), so as to
Carry out excessive crystallization.
Figure 12 is the composition figure for illustrating laser heat treatment equipment according to another embodiment of the present invention.
Laser heat treatment equipment shown in 2, Fig. 1, which can be arranged in, referring to Fig.1 is able to maintain that the predetermined atmosphere item such as vacuum
The inside of the chamber 50 of part.
Laser irradiating part 20 can be arranged in the inside of chamber 50 or the outside of chamber 50.It is arranged by laser irradiating part 20
In the case of the outside of chamber 50, the laser irradiating part with more complex structure can be relatively easily safeguarded and managed
20.In this case, it is possible to which the side wall in chamber 50 forms transmissive window 52 and so that laser L1 is maintained energy and rectilinear propagation and provide
To the inside of chamber 50.
So, by using the film crystallization method of laser heat treatment equipment according to an embodiment of the invention to this
The embodiment of invention is described in detail.
Figure 13 is the flow chart for illustrating film crystallization method according to an embodiment of the invention, is carried out referring to Fig.1
Explanation.
First, the substrate 110 for being formed with by processing film 110 is installed on platform 10 (step S1).
It is semiconductive thin film by processing film 110, such as can is amorphous silicon membrane.It can be with pre- by processing film 110
Fixed thickness is deposited on before substrate 100.
Platform 10 is set to move (step S2) at a predetermined rate along a direction such as horizontal direction.Also, in platform 10
In the state of movement, first laser beam L1 (step S3) is irradiated to by processing film 110.
The first laser beam L1 exported from laser irradiating part 20 is waited by means of optical system 30 and is changed path, so as to
Be irradiated to platform 10 by processing film 110.First laser beam L1 is preferably the surface relative to platform 10 with less than 90 degree
Angle, such as 35 degree 65 degree or so irradiate, can also be to be irradiated with the line morphology of scheduled width and length.First laser beam L1
For example, excimer laser beam, can be to have the frequency of hundreds of hertz (Hz) and several watts (watt) to the energy of several hectowatt
The pulse mode of amount is irradiated.
With reference to Fig. 4, by irradiating first laser beam L1, non-crystalline silicon is tied in by processing film 110 a region 112
Crystallization and polysilicon can be converted into.At this point, non-crystalline silicon is melted because of heat, to be converted into the silicon (Si) of liquid, hereafter coagulated
Consolidate and being crystallized.
Make to make second laser beam L2 to by processing film from the first laser beam L1 reflections reflected by processing film 110
110 irradiations (step S4).
The liquid-state silicon (Si) has 60% to 70% or so higher surface reflectivity.Accordingly, first laser beam L1
It can be by the surface reflection of processing film 110.
From by the first laser beam L1 ' of the surface reflection of processing film 110 relative to platform 10 surface with scheduled angle
Degree reflection, so as to be incident on speculum 40.Also, the second laser beam L2 reflected from speculum 40 can be again to by from
Film 110 is managed to irradiate.
At this point, second laser beam L2 is with the side Chong Die at least part in region 112 irradiated by first laser beam L1
Formula is irradiated, so as to so that by the part in the region 114 of second laser beam L2 irradiations and by the area of first laser beam L1 irradiations
At least part in domain 112 is overlapped.
The explanation such as carried out by Fig. 5 a and Fig. 6 a, if the area that the first laser beam L1 with the first ENERGY E 1 is irradiated
The region 114 that domain 112 and second laser beam L2 with the second ENERGY E 2 less than the first ENERGY E 1 are irradiated is not overlapped, then all
The second area 112b of edge may cause degree of crystallization insufficient due to relatively small energy.For example, in crystalline particle
The size of (crystal grain) is smaller and the uniformity is relatively low, and keeps field-effect mobility (mobility) relatively low and may produce
Property difference between raw element, and Leakage Current may be induced since lattice defect (lattice defect) is more.
But the explanation such as carried out by Fig. 5 b and Fig. 6 b, according to an embodiment of the invention, in the region of overlapping 116, by
In being heat-treated twice and energy increase, can be improved to the degree of crystallization of second area 112b.For example, can make
The size and the uniformity of crystalline particle increase and reduce lattice defect.
The second ENERGY E 2 of second laser beam L2 is less than the first ENERGY E 1 of first laser beam L1, therefore by second laser beam
The degree of crystallization in the region 114 of L2 irradiations is less than by the region 112 of first laser beam L1 irradiations, but by processing film
110 due to platform 10 moves and to one in the state of movement, first laser beam L1 is with the pulse mode of hundreds of hertz (Hz)
Irradiation, therefore the whole region for being handled film 110 can be made almost evenly to crystallize by process as described above.
Laser heat treatment equipment is according to the performance of laser irradiating part 20 and in terms of the width and length for increasing laser beam L1
There are limitations.That is, in order to obtain to crystallizing effective energy density, the size of laser beam L1 may be limited.
If increasing the width of laser beam in the range of the energy density being able to maintain that needed for crystallization, length may
It reduces, if increasing length, width is likely to reduced.In order to increase laser while maintaining the energy density needed for crystallization
The width of beam needs to add other laser beams again in a manner of adjacent with the laser beam, needs additional equipment thus.
But according to an embodiment of the invention, make by using the laser beam of reflection by the L1 irradiations of first laser beam
It region 112 and is partly overlapped by the region 114 of second laser beam L2 irradiation, makes to crystallizing effective laser so as to realize
The increased effect of effective width of beam.If the effective width of laser beam increases, to by the whole crystallization of processing film 110
During change, the Duplication of laser beam is got higher, therefore can improve crystallization quality, and can improve productivity.Therefore, originally
The embodiment of invention improves crystallization quality to more than predetermined level not additional equipment, and can maintain raw
Production property.
As described above, disclosing most highly preferred embodiment of the invention by illustrating with attached drawing.Term therein is only
It is used with illustrating the purpose of the present invention, should not be limited or be limited the present invention's described in claim by meaning
Range.Therefore, as long as having the personnel of basic knowledge in the art, it will be able to which understanding can realize various change accordingly
Shape and equivalent other embodiment.Therefore, real technical protection scope of the invention should be according to appended claims
Technological thought and define.
Claims (10)
1. a kind of laser heat treatment equipment, including：
Platform, support is formed with by the substrate of processing film, and is moved at a predetermined rate；
Laser irradiating part irradiates first laser beam to described in the state that the platform moves by processing film；And
Speculum makes being reflected from the first laser beam by processing film reflector described by processing film illuminated second
Laser beam,
Wherein, the angle of reflection of the speculum be adjusted to make the second laser beam with it is described by processing film by described the
At least part overlapping in the region of one laser beam irradiation.
2. laser heat treatment equipment as described in claim 1, wherein
The first area for including central portion by the region of first laser beam irradiation by processing film and cloth respectively
The second area in the both sides of the first area is set, the angle of reflection of the speculum is adjusted to make the second area
At least part it is Chong Die with the second laser beam.
3. laser heat treatment equipment as claimed in claim 2, wherein
And the energy of the corresponding first laser beam of the second area is less than corresponding with the first area described first
The energy of laser beam.
4. laser heat treatment equipment as claimed in claim 2, wherein
Relative to the direction of platform movement, the second area Chong Die with the second laser beam is located at firstth area
Before domain.
5. laser heat treatment equipment as claimed in claim 2, wherein
The 20% to 100% of the second area is Chong Die with the second laser beam.
6. a kind of film crystallization method, including following step：
Platform is installed on by the substrate of processing film by being formed with；
The platform is set to move at a predetermined rate；
First laser beam is irradiated by processing film to described；And
It will be reflected from the first laser beam by processing film reflector, it is described by processing film illuminated second to make
Laser beam,
Wherein, the second laser beam with it is described by processing film by least one of the region of first laser beam irradiation
Divide overlapping.
7. film crystallization method as claimed in claim 6, wherein described by processing film includes non-crystalline silicon.
8. film crystallization method as claimed in claim 6, wherein
The first area for including central portion by the region of first laser beam irradiation by processing film and cloth respectively
Set the second area in the both sides of the first area, at least part of the second area and the second laser Shu Chong
It is folded.
9. film crystallization method as claimed in claim 8, wherein
And the energy of the corresponding first laser beam of the second area is less than corresponding with the first area described first
The energy of laser beam.
10. film crystallization method as claimed in claim 8, wherein
Relative to the direction of platform movement, the second area Chong Die with the second laser beam is located at firstth area
Before domain.
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| KR20170013999 | 2017-01-31 | ||
| KR10-2017-0013999 | 2017-01-31 | ||
| KR1020170016652A KR102612443B1 (en) | 2017-01-31 | 2017-02-07 | Laser annealing apparatus and method for crystallizing thin film using the same |
| KR10-2017-0016652 | 2017-02-07 |
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| CN108461421A true CN108461421A (en) | 2018-08-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10991580B2 (en) | 2017-12-05 | 2021-04-27 | Samsung Display Co., Ltd. | Laser crystallizing apparatus |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000133593A (en) * | 1998-10-28 | 2000-05-12 | Nec Corp | Device and method for laser irradiation |
| JP2000216088A (en) * | 1999-01-20 | 2000-08-04 | Sony Corp | Method of forming semiconductor thin film and laser irradiator |
| JP2001044133A (en) * | 1999-08-02 | 2001-02-16 | Sharp Corp | Laser radiation method and manufacture of semiconductor device |
| DE102008035304A1 (en) * | 2008-07-24 | 2010-01-28 | Carl Zeiss Laser Optics Gmbh | Optical system for illuminating substrate with light, particularly for use in microelectronics or in display technology, comprises light source for producing light, which is directed on substrate under angle of incidence |
| JP2011204912A (en) * | 2010-03-25 | 2011-10-13 | Japan Steel Works Ltd:The | Method for manufacturing laser anneal processed body, and laser annealing apparatus |
| US20140017861A1 (en) * | 2012-07-10 | 2014-01-16 | Sung-Ho Kim | Laser crystallization apparatus and method |
| US20160284546A1 (en) * | 2015-03-27 | 2016-09-29 | Samsung Display Co., Ltd. | Method of manufacturing a substrate having a crystallized layer and a laser crystallizing apparatus for the same |
-
2018
- 2018-01-31 CN CN201810094612.XA patent/CN108461421B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000133593A (en) * | 1998-10-28 | 2000-05-12 | Nec Corp | Device and method for laser irradiation |
| JP2000216088A (en) * | 1999-01-20 | 2000-08-04 | Sony Corp | Method of forming semiconductor thin film and laser irradiator |
| JP2001044133A (en) * | 1999-08-02 | 2001-02-16 | Sharp Corp | Laser radiation method and manufacture of semiconductor device |
| DE102008035304A1 (en) * | 2008-07-24 | 2010-01-28 | Carl Zeiss Laser Optics Gmbh | Optical system for illuminating substrate with light, particularly for use in microelectronics or in display technology, comprises light source for producing light, which is directed on substrate under angle of incidence |
| JP2011204912A (en) * | 2010-03-25 | 2011-10-13 | Japan Steel Works Ltd:The | Method for manufacturing laser anneal processed body, and laser annealing apparatus |
| US20140017861A1 (en) * | 2012-07-10 | 2014-01-16 | Sung-Ho Kim | Laser crystallization apparatus and method |
| US20160284546A1 (en) * | 2015-03-27 | 2016-09-29 | Samsung Display Co., Ltd. | Method of manufacturing a substrate having a crystallized layer and a laser crystallizing apparatus for the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10991580B2 (en) | 2017-12-05 | 2021-04-27 | Samsung Display Co., Ltd. | Laser crystallizing apparatus |
| US11532476B2 (en) | 2017-12-05 | 2022-12-20 | Samsung Display Co., Ltd. | Laser crystallizing apparatus |
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| CN108461421B (en) | 2024-01-30 |
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