CN108459462B - Photomask, method for manufacturing the same, and exposure method - Google Patents
Photomask, method for manufacturing the same, and exposure method Download PDFInfo
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- CN108459462B CN108459462B CN201710128566.6A CN201710128566A CN108459462B CN 108459462 B CN108459462 B CN 108459462B CN 201710128566 A CN201710128566 A CN 201710128566A CN 108459462 B CN108459462 B CN 108459462B
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 230000000903 blocking effect Effects 0.000 claims abstract description 36
- 238000001914 filtration Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 28
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 230000010363 phase shift Effects 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
Abstract
The invention discloses a photomask, a manufacturing method thereof and an exposure method. The photomask comprises a transparent substrate, a light blocking layer, at least one first filtering pattern and at least one second filtering pattern. The light blocking layer is arranged on the transparent substrate and is provided with at least one first opening and at least one second opening which are alternately arranged. The first filter pattern is disposed in the first opening and allows only a first light having a first wavelength to pass through. The second filter pattern is disposed in the second opening and only allows a second light having a second wavelength to pass through. The first wavelength and the second wavelength are different wavelengths.
Description
Technical Field
The present invention relates to a photomask, a method of manufacturing the same, and an exposure method, and more particularly, to a photomask having a high exposure resolution, a method of manufacturing the same, and an exposure method.
Background
In semiconductor manufacturing, photolithography (photolithography) plays a very important role, wherein exposure resolution (resolution) is an important index of photolithography quality. Generally, during exposure, light emitted from a light source is transmitted through a transparent region on a photomask to irradiate a photoresist layer, thereby forming an exposure pattern on the photoresist layer.
With the trend of the semiconductor devices being scaled down, the distance between the exposure patterns formed on the photoresist layer is also being reduced, and thus the distance between the light-transmitting regions on the photomask for forming the exposure patterns is also being reduced. However, when the distance between the light-transmitting regions of the photomask used to form the exposure pattern is too short, interference (interference) occurs after the light passes through the light-transmitting regions of the photomask, so that the exposure resolution is reduced, and even the exposure fails.
Disclosure of Invention
The invention provides a photomask which can have better exposure resolution.
The invention provides a method for manufacturing a photomask, which can manufacture the photomask with better exposure resolution.
The invention provides an exposure method which can effectively improve exposure resolution.
The invention provides a photomask, which comprises a transparent substrate, a light blocking layer, at least one first filtering pattern and at least one second filtering pattern. The light blocking layer is arranged on the transparent substrate and is provided with at least one first opening and at least one second opening which are alternately arranged. The first filter pattern is disposed in the first opening and allows only a first light having a first wavelength to pass through. The second filter pattern is disposed in the second opening and only allows a second light having a second wavelength to pass through. The first wavelength and the second wavelength are different wavelengths.
According to an embodiment of the invention, in the photomask, the materials of the first filter pattern and the second filter pattern are, for example, multilayer films. The multilayer film comprises at least one high refractive index layer and at least one low refractive index layer which are alternately stacked, and the uppermost layer and the lowermost layer of the multilayer film are respectively high refractive index layers. The multilayer film further includes at least one medium refractive index layer. The medium refractive index layer is located between the high refractive index layer and the low refractive index layer.
According to an embodiment of the invention, in the photomask, the light blocking layer further has at least one third opening. The first openings, the second openings and the third openings are arranged alternately. The photomask further includes at least one third filter pattern. The third filter pattern is disposed in the third opening and allows only a third light having a third wavelength to pass through. The first wavelength, the second wavelength and the third wavelength are different wavelengths.
According to an embodiment of the invention, in the photomask, a material of the third filter pattern is, for example, a multilayer film. The multilayer film comprises at least one high refractive index layer and at least one low refractive index layer which are alternately stacked, and the uppermost layer and the lowermost layer of the multilayer film are respectively high refractive index layers. The multilayer film further includes at least one medium refractive index layer. The medium refractive index layer is located between the high refractive index layer and the low refractive index layer.
In the above-mentioned photomask, the photomask may be a binary photomask or a phase-shift mask (PSM), according to an embodiment of the present invention.
The invention provides a manufacturing method of a photomask, which comprises the following steps. A light blocking layer is formed on a transparent substrate. The light blocking layer has at least one first opening and at least one second opening arranged alternately. A first filter pattern is formed in the first opening. The first filter pattern allows only first light having a first wavelength to pass through. Forming a second filtering pattern in the second opening. The second filter pattern allows only second light having a second wavelength to pass through. The first wavelength and the second wavelength are different wavelengths.
According to an embodiment of the present invention, in the method for manufacturing a photomask, the method for forming the first filter pattern includes the following steps. A patterned photoresist layer is formed on the light blocking layer. The patterned photoresist layer exposes the first opening. Forming a first filter layer filling the first opening. The patterned photoresist layer is removed.
According to an embodiment of the present invention, in the method for manufacturing a photomask, the method for forming the second filter pattern includes the following steps. A patterned photoresist layer is formed on the light blocking layer. The patterned photoresist layer exposes the second opening. Forming a second filter layer filling the second opening. The patterned photoresist layer is removed.
According to an embodiment of the present invention, in the method for manufacturing a photomask, the light blocking layer further has at least one third opening. The first openings, the second openings and the third openings are arranged alternately. The method for manufacturing the photomask further comprises forming a third filtering pattern in the third opening. The third filter pattern allows only a third light having a third wavelength to pass through. The first wavelength, the second wavelength and the third wavelength are different wavelengths.
According to an embodiment of the present invention, in the method for manufacturing a photomask, the method for forming the third filter pattern includes the following steps. A patterned photoresist layer is formed on the light blocking layer. The patterned photoresist layer exposes the third opening. Forming a third filter layer filling the third opening. The patterned photoresist layer is removed.
The invention provides an exposure method, which comprises the following steps. A photoresist layer is provided. A light source is provided. The light source simultaneously emits a first light with a first wavelength and a second light with a second wavelength, and the first wavelength and the second wavelength are different wavelengths. A photomask is provided. The photomask comprises a transparent substrate, a light blocking layer, at least one first filtering pattern and at least one second filtering pattern. The light blocking layer is arranged on the transparent substrate and is provided with at least one first opening and at least one second opening which are alternately arranged. The first filter pattern is disposed in the first opening and allows only a first light having a first wavelength to pass through. The second filter pattern is disposed in the second opening and only allows a second light having a second wavelength to pass through. The photomask is irradiated by a light source, so that the first light rays are irradiated to the photoresist layer through the first light filtering pattern, and simultaneously, the second light rays are irradiated to the photoresist layer through the second light filtering pattern.
According to an embodiment of the invention, in the exposure method, the light source can further emit a third light having a third wavelength, and the first wavelength, the second wavelength and the third wavelength are different wavelengths. The light blocking layer may further have at least one third opening. The first openings, the second openings and the third openings are arranged alternately. The photomask further includes a third filter pattern disposed in the third opening. The third filter pattern allows only a third light having a third wavelength to pass through.
According to an embodiment of the present invention, in the exposure method, the step of irradiating the photomask with the light source further includes irradiating a third light to the photoresist layer through the third filter pattern.
Based on the above, the photomask provided by the invention has the first filter patterns and the second filter patterns alternately arranged, and the first filter patterns only allow the first light with the first wavelength to pass through, and the second filter patterns only allow the second light with the second wavelength to pass through. Since the first wavelength and the second wavelength are different wavelengths, the first light passing through the first filter pattern and the second light passing through the second filter pattern do not interfere with each other, so that a Critical Dimension (CD) in a single exposure process can be reduced, and the photomask provided by the invention has better exposure resolution.
In addition, the photomask with better exposure resolution can be manufactured by the manufacturing method of the photomask.
In addition, the exposure method provided by the invention is used for carrying out the exposure manufacturing process by using the photomask, so that the exposure resolution can be effectively improved.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIGS. 1A to 1G are schematic perspective views illustrating a manufacturing process of a photomask according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of the filter layer in fig. 1C;
fig. 3 is a schematic cross-sectional view of the filter layer in fig. 1F;
FIGS. 4A to 4E are schematic perspective views illustrating a manufacturing process of a photomask according to another embodiment of the present invention;
fig. 5 is a schematic cross-sectional view of the filter layer in fig. 4D;
FIG. 6 is a flowchart illustrating an exposure method according to an embodiment of the invention.
Description of the symbols
100: transparent substrate
102: light-blocking layer
104. 106, 128: opening of the container
108. 118, 130: patterned photoresist layer
110. 120, 132: filter layer
110a, 120a, 132 a: light filtering pattern
112. 122, 134: high refractive index layer
114. 124, 136: low refractive index layer
116. 126, 138: middle refractive index layer
MK1, MK 2: photomask and method of manufacturing the same
S100, S102, S104, S106: step (ii) of
Detailed Description
Fig. 1A to 1G are schematic perspective views illustrating a manufacturing process of a photomask according to an embodiment of the invention. Fig. 2 is a schematic cross-sectional view of the filter layer in fig. 1C. Fig. 3 is a schematic cross-sectional view of the filter layer in fig. 1F.
Referring to fig. 1A, a light blocking layer 102 is formed on a transparent substrate 100. The light blocking layer 102 has at least one opening 104 and at least one opening 106 alternately arranged. The material of the transparent substrate 100 is, for example, quartz. The material of the light blocking layer 102 is, for example, Cr, MoSi, or a combination thereof. The light blocking layer 102 is formed by, for example, physical vapor deposition. The openings 104 and 106 are formed by, for example, patterning the light blocking layer 102. The openings 104 and 106 respectively expose the transparent substrate 100. In this embodiment, the number of the openings 104 and the number of the openings 106 are illustrated as a plurality.
Referring to fig. 1B, a patterned photoresist layer 108 is formed on the light blocking layer 102. The patterned photoresist layer 108 exposes the opening 104. The material of the patterned photoresist layer 108 may be a positive photoresist material or a negative photoresist material. The patterned photoresist layer 108 is formed, for example, by a photolithographic fabrication process.
Referring to fig. 1C, a filter layer 110 is formed to fill the opening 104. The material of the filter layer 110 is, for example, a multilayer film. The filter layer 110 may be formed by a physical vapor deposition method, such as evaporation.
For example, referring to fig. 2, when the material of the filter layer 110 is a multilayer film, the multilayer film may include at least one high refractive index layer 112 and at least one low refractive index layer 114 alternately stacked, and the uppermost layer and the lowermost layer of the multilayer film are the high refractive index layers 112 respectively. In addition, the multilayer film may further include at least one medium refractive index layer 116. The medium refractive index layer 116 is located between the high refractive index layer 112 and the low refractive index layer 114. In this embodiment, the number of high refractive index layers 112, the number of low refractive index layers 114, and the number of medium refractive index layers 116 are described as an example of a plurality of layers, respectively.
Referring to fig. 1D, the patterned photoresist layer 108 is removed, and a filter pattern 110a is formed in the opening 104. The filter pattern 110a allows only the first light having the first wavelength to pass therethrough. In detail, when the patterned photoresist layer 108 is removed, the filter layer 110 on the patterned photoresist layer 108 is simultaneously removed, and the filter pattern 110a is formed by the filter layer 110 remaining in the opening 104. The patterned photoresist layer 108 is removed by, for example, a dry photoresist stripping method or a wet photoresist stripping method. In this embodiment, the filter pattern 110a is formed by a lift-off method, but the invention is not limited thereto.
Referring to fig. 1E, a patterned photoresist layer 118 is formed on the light blocking layer 102. The patterned photoresist layer 118 exposes the opening 106. The material of the patterned photoresist layer 118 may be a positive photoresist material or a negative photoresist material. The patterned photoresist layer 118 is formed, for example, by a photolithography process.
Referring to fig. 1F, a filter layer 120 is formed to fill the opening 106. The material of the filter layer 120 is, for example, a multilayer film. The filter layer 120 may be formed by a physical vapor deposition method, such as evaporation.
For example, referring to fig. 3, when the material of the filter layer 120 is a multilayer film, the multilayer film may include at least one high refractive index layer 122 and at least one low refractive index layer 124 that are alternately stacked, and the uppermost layer and the lowermost layer of the multilayer film are the high refractive index layers 122 respectively. In addition, the multilayer film may further include at least one medium refractive index layer 126. The medium refractive index layer 126 is located between the high refractive index layer 122 and the low refractive index layer 124. In this embodiment, the number of high refractive index layers 122, the number of low refractive index layers 124, and the number of medium refractive index layers 126 are described as an example of a plurality of layers, respectively.
Referring to fig. 1G, the patterned photoresist layer 118 is removed, and a filter pattern 120a is formed in the opening 106. The filter pattern 120a allows only the second light having the second wavelength to pass therethrough. The first wavelength and the second wavelength are different wavelengths. In detail, when the patterned photoresist layer 118 is removed, the filter layer 120 on the patterned photoresist layer 118 is simultaneously removed, and the filter pattern 120a is formed by the filter layer 120 remaining in the opening 106. The patterned photoresist layer 118 is removed by, for example, a dry photoresist stripping method or a wet photoresist stripping method. In this embodiment, the filter pattern 120a is formed by a lift-off method, but the invention is not limited thereto.
The structure of photomask MK1 is described below with reference to fig. 1G. Photomask MK1 may be a binary photomask or a phase-shift photomask (e.g., an attenuated phase-shift mask, AttPSM)).
Referring to fig. 1G, the photomask MK1 includes a transparent substrate 100, a light blocking layer 102, at least one filter pattern 110a, and at least one filter pattern 120 a. The light blocking layer 102 is disposed on the transparent substrate 100 and has at least one opening 104 and at least one opening 106 alternately arranged. The filter pattern 110a is disposed in the opening 104 and allows only a first light having a first wavelength to pass therethrough. The filter pattern 120a is disposed in the opening 106 and allows only a second light having a second wavelength to pass therethrough. The first wavelength and the second wavelength are different wavelengths. In addition, the materials, characteristics, forming methods and arrangement of the components of the photomask MK1 have been described in detail in the above embodiments, and will not be described again.
Based on the above embodiments, the photomask MK1 has the filter patterns 110a and the filter patterns 120a arranged alternately, and the filter patterns 110a only allow the first light with the first wavelength to pass through, and the filter patterns 120a only allow the second light with the second wavelength to pass through. In addition, since the first wavelength and the second wavelength are different wavelengths, the first light passing through the filter pattern 110a and the second light passing through the filter pattern 120a do not interfere with each other, so that the critical dimension in the single exposure process can be reduced, and the photomask MK1 can have a better exposure resolution. In addition, the photomask MK1 having a preferable exposure resolution can be manufactured by the above photomask manufacturing method.
Fig. 4A to 4E are schematic perspective views illustrating a manufacturing process of a photomask according to another embodiment of the present invention. The same components in the embodiment of fig. 4A to 4E and the embodiment of fig. 1A to 1G are illustrated with the same reference numerals, and the description thereof is not repeated. Fig. 5 is a cross-sectional view of the filter layer in fig. 4D.
Referring to fig. 4A, a light blocking layer 102 is formed on a transparent substrate 100. The light blocking layer 102 has at least one opening 128 in addition to the at least one opening 104 and the at least one opening 106. Openings 104, 106 and openings 128 are arranged alternately. The material of the light blocking layer 102 is, for example, Cr, MoSi, or a combination thereof. The light blocking layer 102 is formed by, for example, physical vapor deposition. The openings 104, 106 and 128 are formed by, for example, patterning the light blocking layer 102. The openings 104, 106 and 128 respectively expose the transparent substrate 100. In this embodiment, the number of the openings 104, the number of the openings 106, and the number of the openings 128 are illustrated as a plurality.
Referring to fig. 4B, a filter pattern 110a is formed in the opening 104, and a filter pattern 120a is formed in the opening 106. The forming methods of the filter patterns 110a and 120a can be described with reference to fig. 1B to 1G, and the description thereof is not repeated.
Referring to fig. 4C, a patterned photoresist layer 130 is formed on the light blocking layer 102. The patterned photoresist layer 130 exposes the opening 128. The material of the patterned photoresist layer 130 may be a positive photoresist material or a negative photoresist material. The patterned photoresist layer 130 is formed, for example, by a photolithography process.
Referring to fig. 4D, a filter layer 132 filling the opening 128 is formed. The material of the filter layer 132 is, for example, a multilayer film. The filter layer 132 is formed by a physical vapor deposition method, such as evaporation.
For example, referring to fig. 5, when the material of the filter layer 132 is a multilayer film, the multilayer film may include at least one high refractive index layer 134 and at least one low refractive index layer 136 alternately stacked, and the uppermost layer and the lowermost layer of the multilayer film are the high refractive index layers 134 respectively. In addition, the multilayer film may further include at least one medium refractive index layer 138. Intermediate index layer 138 is located between high index layer 134 and low index layer 136. In this embodiment, the number of high refractive index layers 134, the number of low refractive index layers 136, and the number of medium refractive index layers 138 are each described as an example of a multilayer.
Referring to fig. 4E, the patterned photoresist layer 130 is removed, and a filter pattern 132a is formed in the opening 128. The filter pattern 132a allows only the third light having the third wavelength to pass therethrough. The first wavelength, the second wavelength and the third wavelength are different wavelengths. In detail, when the patterned photoresist layer 130 is removed, the filter layer 132 on the patterned photoresist layer 130 is simultaneously removed, and the filter pattern 132a is formed by the filter layer 132 remaining in the opening 128. The patterned photoresist layer 130 is removed by, for example, a dry photoresist stripping method or a wet photoresist stripping method. In this embodiment, the filter pattern 132a is formed by a lift-off method, but the invention is not limited thereto.
The structure of photomask MK2 is described below with reference to fig. 4E. Photomask MK2 may be a binary photomask or a phase shift photomask (e.g., an attenuated phase shift photomask).
Referring to fig. 4E and fig. 1G together, the difference between the photomask MK2 of fig. 4E and the photomask MK1 of fig. 1G is as follows. The light blocking layer 102 further has at least one opening 128, and the photomask MK2 further includes at least one layer of filter pattern 132 a. The filter pattern 132a is disposed in the opening 128 and allows only a third light having a third wavelength to pass therethrough. The first wavelength, the second wavelength and the third wavelength are different wavelengths. As such, the photomask MK2 has the filter patterns 110a, 120a, and 132a arranged alternately. The arrangement of the filter patterns 110a, 120a and 132a is not limited to the arrangement shown in fig. 4E, as long as two filter patterns allowing light of the same wavelength to pass through are not adjacent to each other. That is, it is within the scope of the present invention to insert a filter pattern allowing light of another wavelength to pass between two filter patterns allowing light of the same wavelength to pass through. In addition, the materials, characteristics, forming methods and arrangement of the components of the photomask MK2 have been described in detail in the above embodiments, and will not be described again.
Based on the above embodiments, the photomask MK2 has the filter patterns 110a, the filter patterns 120a and the filter patterns 132a arranged alternately, and the filter patterns 110a only allow the first light with the first wavelength to pass through, the filter patterns 120a only allow the second light with the second wavelength to pass through, and the filter patterns 132a only allow the third light with the third wavelength to pass through. In addition, since the first wavelength, the second wavelength and the third wavelength are different wavelengths, the first light passing through the filter pattern 110a, the second light passing through the filter pattern 120a and the third light passing through the filter pattern 132a do not interfere with each other, so that the critical dimension in the single exposure process can be reduced, and the photomask MK2 has a better exposure resolution. In addition, the photomask MK2 having a preferable exposure resolution can be manufactured by the above photomask manufacturing method.
In the above embodiments, the respective wavelength purities of the first light, the second light and the third light depend on the capability of the light source, but it is within the scope of the present invention as long as the selected first light, the selected second light and the selected third light do not interfere with each other.
In addition, although the photomask is described by including two or three kinds of filter patterns as an example, the invention is not limited thereto, and the photomask having a plurality of different filter patterns is within the protection scope of the invention. For example, the photomask of the present invention may be applied to a case where four or more kinds of filter patterns are included.
FIG. 6 is a flowchart illustrating an exposure method according to an embodiment of the invention.
Referring to fig. 6, step S100 is performed to provide a photoresist layer. The material of the photoresist layer is, for example, a positive photoresist material or a negative photoresist material. The photoresist layer is formed by, for example, spin coating.
Step S102 is performed to provide a light source. In this embodiment, for example, the light source emits a first light having a first wavelength and a second light having a second wavelength, and the first wavelength and the second wavelength are different wavelengths. In another embodiment, the light source can also emit a third light beam with a third wavelength, and the first wavelength, the second wavelength and the third wavelength are different wavelengths.
Proceeding to step S104, a photomask MK1 is provided. In this embodiment, the photomask MK1 in fig. 1G is used as an example for explanation, but the invention is not limited thereto. In the photomask MK1, the filter pattern 110a allows only the first light having the first wavelength to pass through, and the filter pattern 120a allows only the second light having the second wavelength to pass through. In another embodiment, the photomask may also be the photomask MK2 of FIG. 4E. In the photomask MK2, the filter pattern 110a allows only the first light having the first wavelength to pass through, the filter pattern 120a allows only the second light having the second wavelength to pass through, and the filter pattern 132a allows only the third light having the third wavelength to pass through. The materials, properties, forming methods and arrangement of the components of photomasks MK1 and MK2 have been described in detail in the above embodiments, and will not be described again.
Step S106 is performed to irradiate the photomask MK1 with a light source, to irradiate the photoresist layer with first light through the filter pattern 110a, and to simultaneously irradiate the photoresist layer with second light through the filter pattern 120 a. Since the first wavelength and the second wavelength are different wavelengths, the first light passing through the filter pattern 110a and the second light passing through the filter pattern 120a do not interfere with each other, so that the critical dimension in the single exposure process can be reduced, and the resolution of the exposure pattern transferred to the photoresist layer can be improved.
In another embodiment, in the case of using the photomask MK2, the step S106 of irradiating the photomask with a light source further includes irradiating third light to the photoresist layer through the filter pattern 132 a. Since the first, second and third wavelengths are different wavelengths, the first light passing through the filter pattern 110a, the second light passing through the filter pattern 120a and the third light passing through the filter pattern 132a do not interfere with each other, so that the critical dimension in the single exposure process can be reduced, and the exposure resolution of the exposure pattern transferred to the photoresist layer can be improved.
In summary, in the photo mask of the above embodiments, since the different kinds of filter patterns are alternately arranged and only allow light with specific wavelengths to pass through, no interference occurs between light passing through the filter patterns, so that the photo mask has better exposure resolution. In addition, the photomask with better exposure resolution can be manufactured by the manufacturing method of the photomask of the embodiment. In addition, since the exposure method of the above embodiment is to perform an exposure manufacturing process using the above photomask, the exposure resolution can be effectively improved.
Although the present invention has been disclosed in connection with the above preferred embodiments, it is not intended to limit the present invention, and those skilled in the art will be able to make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention should be determined by the appended claims.
Claims (17)
1. A photomask, comprising:
a transparent substrate;
the light blocking layer is arranged on the transparent substrate and is characterized in that: the light blocking layer is provided with at least one first opening and at least one second opening which are alternately arranged; and the photomask further comprises:
at least one first light filtering pattern which is arranged in the at least one first opening and only allows a first light ray with a first wavelength to pass through; and
at least one second filtering pattern disposed in the at least one second opening and allowing only a second light having a second wavelength to pass through, wherein the first wavelength and the second wavelength are different wavelengths.
2. The photomask of claim 1, wherein the material of the at least one first filter pattern and the at least one second filter pattern each comprises a multilayer film.
3. The photomask of claim 2, wherein the multilayer film comprises at least one high refractive index layer and at least one low refractive index layer alternately stacked, and the uppermost layer and the lowermost layer of the multilayer film are the high refractive index layers, respectively.
4. The photomask of claim 3, wherein the multilayer film further comprises at least one intermediate refractive index layer, and the intermediate refractive index layer is located between the high refractive index layer and the low refractive index layer.
5. The photomask of claim 1, wherein
The light-blocking layer further has at least one third opening, wherein the at least one first opening, the at least one second opening and the at least one third opening are alternately arranged, and
the photomask further comprises at least one third light filtering pattern, the at least one third light filtering pattern is arranged in the at least one third opening and only allows a third light ray with a third wavelength to pass through, and the first wavelength, the second wavelength and the third wavelength are different wavelengths.
6. The photomask of claim 5, wherein the material of the at least one third filter pattern comprises a multilayer film.
7. The photomask of claim 6, wherein the multilayer film comprises at least one high refractive index layer and at least one low refractive index layer alternately stacked, and the uppermost layer and the lowermost layer of the multilayer film are the high refractive index layers, respectively.
8. The photomask of claim 7, wherein the multilayer film further comprises at least one intermediate refractive index layer, and the intermediate refractive index layer is located between the high refractive index layer and the low refractive index layer.
9. The photomask of claim 1, wherein the photomask comprises a binary photomask or a phase shift photomask.
10. A method of manufacturing a photomask, comprising:
forming a light-blocking layer on a transparent substrate, wherein the light-blocking layer has at least one first opening and at least one second opening arranged alternately; and the method for manufacturing the photomask further comprises:
forming at least one first filter pattern in the at least one first opening, wherein the at least one first filter pattern only allows a first light with a first wavelength to pass through; and
at least one second filtering pattern is formed in the at least one second opening, wherein the at least one second filtering pattern only allows a second light with a second wavelength to pass through, and the first wavelength and the second wavelength are different wavelengths.
11. The method of claim 10, wherein the forming of the at least one first filter pattern comprises:
forming a patterned photoresist layer on the light blocking layer, wherein the patterned photoresist layer exposes the at least one first opening;
forming a first filter layer filling the at least one first opening; and
the patterned photoresist layer is removed.
12. The method of claim 10, wherein the forming of the at least one second filter pattern comprises:
forming a patterned photoresist layer on the light blocking layer, wherein the patterned photoresist layer exposes the at least one second opening;
forming a second filter layer filling the at least one second opening; and
the patterned photoresist layer is removed.
13. The method of claim 10, wherein the light-blocking layer further has at least one third opening, wherein the at least one first opening, the at least one second opening and the at least one third opening are alternately arranged, and the method further comprises:
at least one third filtering pattern is formed in the at least one third opening, wherein the at least one third filtering pattern only allows a third light with a third wavelength to pass through, and the first wavelength, the second wavelength and the third wavelength are different wavelengths.
14. The method of claim 13, wherein the forming of the at least one third filter pattern comprises:
forming a patterned photoresist layer on the light blocking layer, wherein the patterned photoresist layer exposes the at least one third opening;
forming a third filter layer filling the at least one third opening; and
the patterned photoresist layer is removed.
15. An exposure method comprising:
providing a photoresist layer;
providing a light source, wherein the light source simultaneously emits a first light with a first wavelength and a second light with a second wavelength, and the first wavelength and the second wavelength are different wavelengths;
providing a photomask, wherein the photomask comprises:
a transparent substrate;
the light blocking layer is arranged on the transparent substrate and is provided with at least one first opening and at least one second opening which are alternately arranged;
at least one first light filtering pattern which is arranged in the at least one first opening and only allows a first light ray with a first wavelength to pass through; and
at least one second light filtering pattern which is arranged in the at least one second opening and only allows a second light ray with a second wavelength to pass through; and
the photomask is irradiated by the light source, so that the first light rays are irradiated to the photoresist layer through the at least one first light filtering pattern, and simultaneously the second light rays are irradiated to the photoresist layer through the at least one second light filtering pattern.
16. The exposure method according to claim 15, wherein
The light source also emits a third light with a third wavelength, and the first wavelength, the second wavelength and the third wavelength are different wavelengths,
the light-blocking layer further has at least one third opening, wherein the at least one first opening, the at least one second opening and the at least one third opening are alternately arranged, and
the photomask further comprises at least one third filter pattern arranged in the at least one third opening, and the at least one third filter pattern only allows a third light ray with a third wavelength to pass through.
17. The exposure method according to claim 16, wherein the step of irradiating the photomask with the light source further comprises irradiating the photoresist layer with the third light through the at least one third filter pattern.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106105210 | 2017-02-17 | ||
| TW106105210A TW201831986A (en) | 2017-02-17 | 2017-02-17 | Photomask and method of manufacturing the same and exposure method |
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| Publication Number | Publication Date |
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| CN108459462A CN108459462A (en) | 2018-08-28 |
| CN108459462B true CN108459462B (en) | 2021-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710128566.6A Active CN108459462B (en) | 2017-02-17 | 2017-03-06 | Photomask, method for manufacturing the same, and exposure method |
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| Country | Link |
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| CN (1) | CN108459462B (en) |
| TW (1) | TW201831986A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110320740A (en) * | 2019-07-22 | 2019-10-11 | 深圳市华星光电技术有限公司 | Mask |
| CN110989288B (en) * | 2019-12-20 | 2022-05-10 | 京东方科技集团股份有限公司 | Mask, mask system and preparation and photoetching methods |
| TWI707195B (en) * | 2020-02-14 | 2020-10-11 | 力晶積成電子製造股份有限公司 | Method of manufacturing phase-shifting photomask |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04147142A (en) * | 1990-10-09 | 1992-05-20 | Mitsubishi Electric Corp | Photomask and its production |
| US5677089A (en) * | 1994-12-16 | 1997-10-14 | Electronics And Telecommunications Research Institute | Photomask for forming T-gate electrode of the semiconductor device |
| CN1904729A (en) * | 2005-07-28 | 2007-01-31 | 联华电子股份有限公司 | Phase shift mask design for exposure to generate micro-through-hole pattern |
| JP2015049282A (en) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | Photomask for manufacturing a display device, manufacturing method of photomask, pattern transfer method, and manufacturing method of display device |
| KR20160024222A (en) * | 2014-08-25 | 2016-03-04 | 주식회사 에스앤에스텍 | Photomask for Flat Panel Display and manufacturing method thereof |
-
2017
- 2017-02-17 TW TW106105210A patent/TW201831986A/en unknown
- 2017-03-06 CN CN201710128566.6A patent/CN108459462B/en active Active
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| TW201831986A (en) | 2018-09-01 |
| CN108459462A (en) | 2018-08-28 |
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