CN108458826A - Semiconductor sensor arrangement - Google Patents
Semiconductor sensor arrangement Download PDFInfo
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- CN108458826A CN108458826A CN201810152192.6A CN201810152192A CN108458826A CN 108458826 A CN108458826 A CN 108458826A CN 201810152192 A CN201810152192 A CN 201810152192A CN 108458826 A CN108458826 A CN 108458826A
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- ceramic package
- nozzle
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- adhering resin
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The present invention is capable of providing the higher semiconductor sensor arrangement of reliability by the leakproofness and patience of the bonding portion of raising nozzle.Semiconductor sensor arrangement has：Ceramic package；Semiconducting sensor element is configured in the plane in the open space of above-mentioned ceramic package and detects the pressure of pressure medium；And nozzle, it is arranged in a manner of covering above-mentioned open space and guides above-mentioned pressure medium into above-mentioned open space, wherein, said nozzle has to above-mentioned ceramic package side insertion section outstanding, the recessed portion being inserted into for above-mentioned insertion section is formed in the side of above-mentioned ceramic package, above-mentioned insertion section and above-mentioned recessed portion by least than the first adhering resin hard second adhering resin by be mutually bonded, joint surface of above-mentioned first adhering resin for above-mentioned ceramic package is bonding with the joint surface of said nozzle.
Description
Technical field
The present invention relates to semiconductor sensor arrangements.
Background technology
Conventionally, there is known semiconductor sensor arrangement, makes semiconducting sensor element according to pressure medium (for example, gas
Body etc.) pressure and the difference of atmospheric pressure generate physical deformation, by detecting the semiconducting sensor element with variation
Resistance value, to detect the pressure of pressure medium and the difference of atmospheric pressure.The more demanding gas of such semiconductor sensor arrangement
Close property, so that pressure medium will not escape to outside.
For example, disclosing following technology in the patent document 1 of lower note：It is measured pressure being detected by sensor element
With in the pressure sensor of the difference of atmospheric pressure, in the convex of the approximate metal pressure introducing cylinder of coefficient of thermal expansion and sensor element
Edge is directly bonded sensor element by bonding agent, by the peripheral containment of sensor element, in the table of sensor element
It will not gas leakage between the back side of face.According to the technology, the reliability to air-tightness can not only be extremely improved, and because heat becomes
Stress caused by shape is hardly conducted to sensor element, can accurately be measured.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2000-171319 bulletins
Invention content
Problems to be solved by the invention
But in semiconductor sensor arrangement, there is the case where using with lower structure：It is empty in the opening of sensor housing
Interior configuring semiconductor sensor element, the top in sensor housing in a manner of covering the open space pass through adhering resin
It is bonded the nozzle for importing pressure medium, to detect pressure medium by semiconducting sensor element in the open space
Pressure.In this case, nozzle payes attention to the joint surface of sensor housing and nozzle relative to sensor housing when being bonded with
Leakproofness and use soft adhering resin, but once due to nozzle apply external force and nozzle and sensor housing are glued
Socket part gives loading, and adhering resin is damaged, then there is pressure medium and escape to outside from the bonding portion of nozzle, semiconductor passes
The problem of reliability of sensor arrangement reduces.
The present invention is in order to solve the project of the above-mentioned prior art, it is therefore intended that by improve nozzle bonding portion it is close
Envelope property and patience, are capable of providing the higher semiconductor sensor arrangement of reliability.
Solution for solving the problem
In order to solve above-mentioned problem, semiconductor sensor arrangement 100 of the invention, has：Ceramic package 110；Half
Conductor sensor element 112 is configured in the plane in the open space 111 of above-mentioned ceramic package 110, and detects pressure
The pressure of medium；And nozzle 120, it is arranged in a manner of covering above-mentioned open space 111, and to above-mentioned open space 111
The interior above-mentioned pressure medium of guiding, above-mentioned semiconductor sensor arrangement 100 are characterized in that said nozzle 120 has to above-mentioned pottery
110 side of porcelain packaging part insertion section 125,126 outstanding is formed in the side of above-mentioned ceramic package 110 for above-mentioned insertion section
125,126 recessed portion 119L, 119R being inserted into, above-mentioned insertion section 125,126 and above-mentioned recessed portion 119L, 119R are by least comparing
Second adhering resin 132 of 131 hard of the first adhering resin and be mutually bonded, above-mentioned first adhering resin 131 be used for above-mentioned pottery
The joint surface of porcelain packaging part 110 is bonding with the joint surface of said nozzle 120.
In addition, above-mentioned reference marks marks to make understanding become easy, only an example, is not limited to illustrate
Scheme.
Invention effect
In accordance with the invention it is possible to improve the leakproofness and patience for the bonding portion for improving nozzle, therefore it is capable of providing reliable
The higher semiconductor sensor arrangement of property.
Description of the drawings
Fig. 1 is the stereoscopic figure of the semiconductor sensor arrangement of one embodiment of the present invention.
Fig. 2 is the exploded perspective view of the semiconductor sensor arrangement of one embodiment of the present invention.
Fig. 3 is the sectional view of semiconductor sensor arrangement shown in FIG. 1.
Fig. 4 is the figure of the specific structure for the ceramic package for indicating one embodiment of the present invention.
Fig. 5 is the X-X' sectional views of pedestal shown in Fig. 4.
Fig. 6 is semiconducting sensor element and integrated circuit in the ceramic package for indicate one embodiment of the present invention
Configuration example a part of enlarged cross-sectional view.
Fig. 7 is the figure of the specific structure for the ceramic package for indicating one embodiment of the present invention (variation).
Fig. 8 is the X-X' sectional views of pedestal shown in Fig. 7.
Fig. 9 be semiconducting sensor element in the ceramic package for indicate one embodiment of the present invention (variation) and
A part of enlarged cross-sectional view of the configuration example of integrated circuit.
Figure 10 is the figure of the specific structure for the nozzle for indicating one embodiment of the present invention.
Figure 11 is the stereoscopic figure of the nozzle of one embodiment of the present invention.
Figure 12 is ceramic package and nozzle in the semiconductor sensor arrangement for indicate one embodiment of the present invention
A part of enlarged cross-sectional view of the structure of bonding portion.
Figure 13 makes ceramic package in the semiconductor sensor arrangement of expression one embodiment of the present invention and nozzle
A part of enlarged cross-sectional view of the structure (state for being filled with adhering resin) of bonding portion.
In figure：
100-semiconductor sensor arrangements, 110,110X-ceramic package, 111-open spaces, 112-semiconductors
Sensor element, 113-integrated circuits, 114-through holes, 115,117-pedestals, 116,118-pedestals (the second pedestal),
119L, 119R-recessed portion, 120-nozzles, 121-base portions, 122-introduction parts, 123-open spaces, 124-through holes,
125,126-insertion section, 127-protrusions, 128-order difference parts, the 131-the first adhering resin, the 132-the second adhering resin,
133-metal wires, 134-Protection glues.
Specific implementation mode
Hereinafter, with reference to attached drawing, one embodiment of the present invention is illustrated.
(outline structure of semiconductor sensor arrangement 100)
First, referring to Fig.1~Fig. 3 illustrates the outline structure of semiconductor sensor arrangement 100.Fig. 1 is the present invention
An embodiment semiconductor sensor arrangement 100 stereoscopic figure.Fig. 2 is the semiconductor of one embodiment of the present invention
The exploded perspective view of sensor device 100.Fig. 3 is the sectional view of semiconductor sensor arrangement 100 shown in FIG. 1.
Fig. 1~semiconductor sensor arrangement shown in Fig. 3 100 is the pressure for detecting pressure medium (for example, gas etc.)
Device.As shown in FIG. 1 to 3, semiconductor sensor arrangement 100 has ceramic package 110 and nozzle 120, is sealed by ceramics
Piece installing 110 and nozzle 120 are mutually bonded and constitute.
In addition, for convenience of description, in the following description, Z-direction in figure is set as upper and lower directions, it especially will be ceramic
110 side of packaging part (Z axis negative side in figure) is set as downside, and 120 side of nozzle (Z axis positive side in figure) is set as upside.In addition, by figure
X-direction is set as front-rear direction, and Y direction in figure is set as left and right directions.
Ceramic package 110 is in rectangular shape on the whole.It is formed with square in the upper surface 110A of ceramic package 110
The open space 111 that shape opens up.Open space 111 is configured to have two stage spatial form, which is upper
First space 111a of the side and second space 111b of downside.First space 111a and second space 111b all has rectangular-shaped
Opening shape.But second space 111b has the opening size smaller than the first space 111a.
It is arranged side-by-side semiconducting sensor element in the bottom surface 111A of open space 111 (parts second space 111b)
112 and integrated circuit 113.In addition, as shown in figure 3, in bottom surface 111A, in the allocation position of semiconducting sensor element 112
Perforation is centrally formed with to the through hole 114 of the outside (downside) of ceramic package 110.
Semiconducting sensor element 112 detects the pressure of pressure medium.Specifically, semiconducting sensor element 112 has
There is the diaphragm functioned as pressure detecting face.Semiconducting sensor element 112 makes the diaphragm according to importing from nozzle 120
The pressure of pressure medium and the difference of the atmospheric pressure imported from through hole 114 are deformed, by detecting the resistance value changed therewith,
To which the difference of the pressure of pressure medium and atmospheric pressure be detected as the pressure of pressure medium.Semiconducting sensor element 112
It is connect by the metal wire 133 of wire bonding and integrated circuit 113 and the Wiring pattern for being formed in ceramic package 110.
Integrated circuit 113 controls semiconducting sensor element 112.For example, 113 amplification semiconductor sensor member of integrated circuit
The detection signal of part 112 is believed according to the detection of the temperature adjustmemt semiconducting sensor element 112 detected by temperature sensor
Number.Integrated circuit 113 is by the metal wire 133 of wire bonding and semiconducting sensor element 112 and is formed in ceramic package
110 Wiring pattern connection.Output signal from integrated circuit 113 via metal wire 133, be formed in ceramic package 110
Wiring pattern and external connection terminals (illustration omitted and explanation), the external output to semiconductor sensor arrangement 100.
In present embodiment, as semiconducting sensor element 112, the semiconductor transducer of so-called gauge pressure type has been used
Element is used from the outside through the atmospheric pressure imported by through hole 114, but not limited to this, for example, it is also possible to using in semiconductor
The semiconducting sensor element of so-called absolute pressure type with vacuum space in sensor element.That is, present embodiment
Ceramic package 110 can be logical to the semiconducting sensor element of gauge pressure type and the semiconducting sensor element of absolute pressure type
With.In addition, dedicated in the semiconducting sensor element for being set as absolute pressure type, ceramic package 110 can also be adopted
With the structure of no through hole 114.
In addition, as shown in figure 3, in present embodiment, ceramic package 110, which is configured to have, has been laminated first~layer 5
Lit-par-lit structure.First, second layer is the part to be formed above-mentioned first space 111a.Third, the 4th layer be to form above-mentioned second
The part of space 111b.Layer 5 is the part to form above-mentioned bottom surface 111A, that is, configuring semiconductor sensor element 112 and collection
At the part of circuit 113.
In addition, as shown in figure 3, being configured with semiconducting sensor element 112 and integrated circuit 113, and it is connected to each gold
In the state of belonging to line 133, Protection glue 134 (for example, silica gel, fluorine glue etc.) is filled to open space 111.Semiconductor sensing as a result,
Device element 112, integrated circuit 113 and each metal wire 133 become the state buried by Protection glue 134, to be situated between relative to pressure
The unexposed mode of matter is protected by Protection glue 134.That is, semiconducting sensor element 112 detects pressure medium across Protection glue 134
Pressure.In addition it is also possible to the Protection glue 134 of low viscosity is locally used on the top of semiconducting sensor element 112, to
Improve the detection sensitivity of semiconducting sensor element 112.In addition, as shown in figure 3, Protection glue 134 is drawn because of surface tension
The wall surface on periphery, therefore become recessed construction.That is, the side surface side highest of Protection glue 134, and central peripheral portion (semiconductor sensing
The peripheral portion of device element 112 and integrated circuit 113) it is minimum.
Nozzle 120 is set to the top of ceramic package 110 in a manner of the open space 111 for covering ceramic package 110.
Nozzle 120 is configured to the center with the base portion 121 for being in rectangular shape and the upper surface 121A for standing up base portion 121
The introduction part 122 of cylindrical shape.Base portion 121 is the part on the top for being adhered to ceramic package 110 in combination.Such as Fig. 3 institutes
Show, the open space 123 with round shaped opening is formed in the bottom surface 121B of base portion 121.Open space 123 is to be combined with each other
When nozzle 120 and ceramic package 110, the part with the 111 continuous space of open space of ceramic package 110 is formed.It leads
It is the part for being externally introduced pressure medium to enter portion 122.Nozzle 120 be formed with by introduction part 122 and base portion 121 vertically
Direction penetrates through and for the through hole 124 of the guide pressure medium into open space 123.As shown in figure 3, through hole 124 has
Internal diameter is with the conical by its shape to become smaller close to open space 123.It is however not limited to which this, it is straight that through hole 124 can also have
Shape.
As shown in Figure 1, the semiconductor sensor arrangement 100 constituted in this way the following group on nozzle 120 and ceramic package 110
Merging uses in the state of being mutually bonded.In the semiconductor sensor arrangement 100, the pressure medium of the detection object of pressure is from outer
Portion is guided via the through hole 124 for being formed in nozzle 120 to the semiconducting sensor element inside semiconductor sensor arrangement 100
112.On the other hand, air is passed from the outside through the guiding of through hole 114 to the semiconductor of the bottom by being formed in ceramic package 110
Sensor component 112.Then, in the inside of semiconductor sensor arrangement 100, pressure is situated between by semiconducting sensor element 112
The pressure of matter and the difference of atmospheric pressure are detected as the pressure of pressure medium, and corresponding with the pressure value will detect signal via
Integrated circuit 113 is exported to the outside of semiconductor sensor arrangement 100.
(configuration structure of semiconducting sensor element 112)
Next, with reference to Fig. 4~Fig. 6, the configuration structure of semiconducting sensor element 112 is illustrated.
(the specific structure of ceramic package 110)
Fig. 4 is the figure of the specific structure for the ceramic package 110 for indicating one embodiment of the present invention.Fig. 4 (a) is pottery
The vertical view of porcelain packaging part 110.Fig. 4 (b) is the right side view of ceramic package 110.After Fig. 4 (c) is ceramic package 110
View.Fig. 4 (d) is the upward view of ceramic package 110.
As shown in Fig. 4 (a), in the bottom surface 111A of the open space 111 (parts second space 111b) of ceramic package 110
The allocation position of allocation position and integrated circuit 113 equipped with semiconducting sensor element 112.In semiconducting sensor element
112 allocation position is respectively formed with pedestal 115 in position corresponding with the four of semiconducting sensor element 112 angles.Separately
Outside, perforation is centrally formed with to the tool of the back side of ceramic package 110 in the allocation position of semiconducting sensor element 112
There is the through hole 114 of the shape of the opening of round.The through hole 114 is in order to externally to semiconducting sensor element 112
Bottom surface side import air to semiconducting sensor element 112 detect atmospheric pressure and be arranged.
In addition, in the allocation position of integrated circuit 113, shape is distinguished in position corresponding with the four of integrated circuit 113 angles
At there is pedestal 116.As shown in Fig. 4 (a), the pedestal 115,116 of present embodiment has rectangular-shaped flat shape.In addition, platform
Seat 115,116 is formed by aluminum oxide coating layer.
In addition, as shown in figure 4, being formed with along upper in the left side 110L and right side 110R of ceramic package 110
Recessed portion 119L, 119R of shape that lower direction extends and is recessed inwardly.The upper end of recessed portion 119L, 119R penetrate through upper surface
110A and open.On the other hand, the lower end of recessed portion 119L, 119R is closed by bottom surface 119La, 119Ra.Recessed portion
119L, 119R are that the bottom surface for being formed in nozzle 120 is inserted into from upper part when nozzle 120 and ceramic package 110 are combined with each other
The insertion section 125,126 (0 and Figure 11 referring to Fig.1) of side is to be bonded the part of insertion section 125,126 by adhering resin.
(structure of pedestal 115)
Fig. 5 is the X-X' sectional views of pedestal 115 shown in Fig. 4.As shown in figure 5, pedestal 115 is by being laminated two layers of oxidation
Aluminized coating and formed.Thereby, it is possible to form the pedestal 115 with enough height H1.In pedestal 115, the upper and lower tool
There is identical rectangular-shaped flat shape.But upper layer has the flat shape smaller than lower layer.For example, in pedestal 115,
By lower layer on one side length W1 be set as 0.3mm and by upper layer while in the case that length W2 is set as 0.2mm, can will be whole
The height H1 of body is arranged to 30 μm or so.Pedestal 116 has structure identical with pedestal 115, therefore omits specific for its
The diagram and explanation of structure.
In addition, pedestal 115,116 is not limited to two layers of lit-par-lit structure, for example, it is also possible to three layers or more of layer
Folded construction, alternatively, it is also possible to not have lit-par-lit structure.In addition, as long as pedestal 115,116 can at least ensure enough sealings
The structure of thickness and enough patience when can obtain wire bonding, allocation position, the configuration number of pedestal 115,116
Amount, shape and raw material are not limited to the above.
(the configuration example of semiconducting sensor element 112 and integrated circuit 113)
Fig. 6 is semiconducting sensor element 112 and collection in the ceramic package 110 for indicate one embodiment of the present invention
At a part of enlarged cross-sectional view of the configuration example of circuit 113.As shown in fig. 6, semiconducting sensor element 112 is the four of its bottom surface
A angle part is placed on the pedestal 115 formed on the 111A of bottom surface.In this state, semiconducting sensor element 112 is logical
Adhering resin is crossed to be adhered on the 111A of bottom surface.Similarly, integrated circuit 113 is placed in its four corners point in bottom surface 111A
On the pedestal 116 of upper formation.In this state, integrated circuit 113 is adhered to by adhering resin on the 111A of bottom surface.In addition, with
In bonding semiconducting sensor element 112 and the adhering resin of integrated circuit 113, it is preferable to use the resin with drug resistance, examples
Such as, fluorine resin can be used.
In this way, in the present embodiment, being placed on pedestal 115 by semiconducting sensor element 112, to partly lead
The gap of the thickness with certain degree is formed between body sensor element 112 and bottom surface 111A.Then, it is filled into the gap viscous
Resin is connect, the peripheral part of the bottom surface of semiconducting sensor element 112 is adhered to bottom surface 111A, so as in semiconductor sensing
Ensure that enough sealings are thick (adhering resin is thick) between device element 112 and bottom surface 111A.Thereby, it is possible to firmly fix semiconductor
Sensor element 112, and can prevent pressure medium from escaping to the bottom surface side of semiconducting sensor element 112 (for importing
114 side of through hole of atmospheric pressure).That is, the air tightness of the inner space of semiconductor sensor arrangement 100 can be improved.In addition, energy
The enough patience improved when carrying out wire bonding to semiconducting sensor element 112.Therefore, it is possible to improve semiconductor sensor arrangement
100 reliability.
Particularly, in present embodiment, the base material as configuring semiconductor sensor element 112 uses ceramic package
110, so as to ensure high rigidity, moisture resistance, resistance to chemical reagents, deformation resistance.Therefore, the semiconductor transducer of present embodiment
Device 100 can be widely used for various pressure mediums, in addition, and pressure medium, external force can both be inhibited to pass semiconductor
The influence of sensor component 112, and maintain the good adhering state of semiconducting sensor element 112.Therefore, it is possible to further carry
The reliability of high semiconductor sensor arrangement 100.
Moreover, in the present embodiment, using ceramic package 110, it is difficult to apply to semiconducting sensor element 112 outer
Power so as to which the quantity of pedestal 115 is arranged to fewer number (four), and can increase the surface of each pedestal 115
Product.As a result, as shown in figure 5, can each pedestal 115 be made lit-par-lit structure and obtain enough height H1, can partly lead
Ensure that enough sealings are thick between body sensor element 112 and bottom surface 111A.
Moreover, in present embodiment, not only semiconducting sensor element 112, and also integrated circuit 113 is also placed in pedestal
On 116.Thereby, it is possible to keep semiconducting sensor element 112 consistent with the height and position of integrated circuit 113, wire bonding is improved
Easiness.But integrated circuit 113 is placed in the structure on pedestal 116 not necessarily.
(variation of the configuration structure of semiconducting sensor element 112)
Here, with reference to Fig. 7~Fig. 9, the variation of the configuration structure of semiconducting sensor element 112 is illustrated.
(the specific structure of ceramic package 110X)
Fig. 7 is the figure of the specific structure for the ceramic package 110X for indicating one embodiment of the present invention (variation).
Fig. 7 (a) is the vertical view of ceramic package 110X.Fig. 7 (b) is the right side view of ceramic package 110X.Fig. 7 (c) is ceramics
The rearview of packaging part 110X.Fig. 7 (d) is the upward view of ceramic package 110X.
Ceramic package 110X shown in Fig. 7 is the variation of ceramic package 110 shown in Fig. 4.Ceramic package
110X ceramic packages 110 as shown in fig. 4 the difference lies in that semiconducting sensor element 112 on the 111A of bottom surface
Allocation position replaces pedestal 115 and is formed with the pedestal 117 more than and quantity more small-sized than pedestal 115.In addition, ceramic package 110X
Ceramic package 110 as shown in fig. 4 the difference lies in that the allocation position substitution of integrated circuit 113 on the 111A of bottom surface
Pedestal 116 and be formed in the pedestal 118 more than and quantity more small-sized than pedestal 116.
Specifically, the allocation position of the semiconducting sensor element 112 on the 111A of bottom surface is along semiconductor transducer member
The peripheral part of the bottom surface of part 112 is formed with multiple (12) pedestals 117.In addition, integrated circuit 113 on the 111A of bottom surface
Peripheral part of the allocation position along the bottom surface of integrated circuit 113 is formed with multiple (12) pedestals 118.As shown in Fig. 7 (a), platform
Flat shape of the seat 117,118 with round.In addition, pedestal 117,118 is formed by aluminum oxide coating layer.
(structure of pedestal 117)
Fig. 8 is the X-X' sectional views of pedestal 117 shown in Fig. 7.As shown in figure 8, pedestal 117 is by one layer of aluminum oxide coating layer
It is formed.Thereby, it is possible to form the pedestal 117 with enough height H2.For example, in pedestal 117, it is set as by diameter W3
In the case of 0.15mm, height H2 can be made to 20 μm or so.Pedestal 118 has structure identical with pedestal 117, therefore saves
Slightly to the diagram and explanation of its specific structure.
In addition, pedestal 117,118 is not limited to one layer, for example, it is also possible to two layers or more of lit-par-lit structure.In addition, platform
The structure of enough patience when as long as seat 117,118 can at least ensure enough sealing thickness and can obtain wire bonding
, allocation position, configuration quantity, shape and the raw material of pedestal 117,118 are not limited to the above.
(the configuration example of semiconducting sensor element 112 and integrated circuit 113)
Fig. 9 is the semiconductor transducer member in the ceramic package 110X for indicate one embodiment of the present invention (variation)
A part of enlarged cross-sectional view of the configuration example of part 112 and integrated circuit 113.As shown in figure 9, semiconducting sensor element 112 exists
The outer peripheral portion of its bottom surface is placed on the pedestal 117 formed on the 111A of bottom surface.In this state, semiconductor transducer member
Part 112 is adhered to by adhering resin on the 111A of bottom surface.Similarly, outer peripheral portion of the integrated circuit 113 in its bottom surface is loaded
In on the pedestal 118 formed on the 111A of bottom surface.In this state, integrated circuit 113 is adhered to bottom surface by adhering resin
On 111A.
In the variation, it is configured on pedestal 117 also by semiconducting sensor element 112, to be passed in semiconductor
The gap of the thickness with certain degree is formed between sensor component 112 and bottom surface 111A.Then, the filling bonding tree into the gap
The peripheral part of the bottom surface of semiconducting sensor element 112 is adhered to bottom surface 111A by fat, so as in semiconductor transducer member
Ensure that enough sealings are thick (adhering resin is thick) between part 112 and bottom surface 111A.Thereby, it is possible to firmly fix semiconductor sensing
Device element 112, and can prevent pressure medium from escaping to the bottom surface side of semiconducting sensor element 112 (for importing air
114 side of through hole of pressure).That is, the air tightness of the inner space of semiconductor sensor arrangement 100 can be improved.In addition, can carry
Height carries out semiconducting sensor element 112 patience when wire bonding.Therefore, it is possible to improve semiconductor sensor arrangement 100
Reliability.
(bonded structure of ceramic package 110 and nozzle 120)
Next, 0~Figure 12 referring to Fig.1, illustrates ceramic package 110 and the bonded structure of nozzle 120.
(the specific structure of nozzle 120)
Figure 10 is the figure of the specific structure for the nozzle 120 for indicating one embodiment of the present invention.Figure 10 (a) is nozzle
120 vertical view.Figure 10 (b) is the right side view of nozzle 120.Figure 10 (c) is the rearview of nozzle 120.Figure 10 (d) is nozzle
120 upward view.Figure 11 is the stereoscopic figure of the nozzle 120 of one embodiment of the present invention.
As shown in Figures 10 and 11, the left and right ends portion on the bottom surface 121B of nozzle 120 is formed with (ceramics envelope downwards
110 direction of piece installing) plate outstanding insertion section 125,126.Insertion section 125,126 is in nozzle 120 and ceramic package 110
When intercombination, it is inserted in recessed portion 119L, 119R (with reference to Fig. 4) of the left and right sides formation of ceramic package 110 and leads to
Cross the part that adhering resin is adhered to recessed portion 119L, 119R.
In addition, being formed with the laminal of the flat shape with round at four angles of the bottom surface 121B of nozzle 120
Protrusion 127.Protrusion 127 be in order to nozzle 120 and ceramic package 110 intercombination when, by with ceramic package
110 upper surface 110A is abutted, between being formed between the bottom surface 121B of nozzle 120 and the upper surface 110A of ceramic package 110
Gap and be arranged.In addition, the allocation position of protrusion 127, configuration quantity and shape are not limited to the content of above-mentioned record.Separately
Outside, in the present embodiment, 120 side of nozzle be arranged protrusion 127, as long as but at least can with ceramic package 110
Upper surface 110A between form gap, for example, it is also possible to which same protrusion is arranged in 110 side of ceramic package.
In addition, the bottom surface 121B of nozzle 120 central portion be formed with surround open space 123 around convex rank
Poor portion 128.Order difference part 128 is compared to the part for the height and position for improving surface around it, and surface has rectangular-shaped put down
Face shape.The order difference part 128 is seamlessly to be embedded in ceramic package when nozzle 120 and ceramic package 110 are combined with each other
The part for the open space 111 that the upper surface of part 110 is formed.That is, (first is empty for the peripheral surface and open space 111 of order difference part 128
Between the parts 111a) inner peripheral surface be close to.Therefore, the opening shape of the flat shape of order difference part 128 and open space 111 is substantially
Identical shape and roughly the same size.
(structure of bonding portion)
Figure 12 be ceramic package 110 in the semiconductor sensor arrangement 100 for indicate one embodiment of the present invention with
A part of enlarged cross-sectional view of the structure (state for being not filled by adhering resin) of the bonding portion of nozzle 120.
As shown in figure 12, when by nozzle 120 and the intercombination of ceramic package 110, first, it will be formed in nozzle 120
Bottom surface 121B insertion section 125,126 be inserted in ceramic package 110 left and right sides formed recessed portion 119L, 119R
It is interior.
Meanwhile the order difference part 128 that will be formed in the bottom surface 121B of nozzle 120 is embedded in the open space of ceramic package 110
In 111.
At this point, the protrusion 127 (0 and Figure 11 referring to Fig.1) at four angles for being formed in bottom surface 121B of nozzle 120 and ceramics
The upper surface 110A of packaging part 110 is abutted.As a result, as shown in figure 12, in the bottom surface 121B of nozzle 120 and ceramic package 110
Upper surface 110A between form gap for filling adhering resin.
In addition, as shown in figure 12, the thickness in the transverse width direction (Y direction in figure) of insertion section 125,126 is than recess
The depth depth in the transverse width direction (Y direction in figure) of portion 119L, 119R is small.As a result, in mutually opposed insertion section
125, the gap for filling adhering resin is formed between 126 inner surface and the inner surface of recessed portion 119L, 119R.
Figure 13 is the expression ceramic package in the semiconductor sensor arrangement 100 for indicate one embodiment of the present invention
110 with a part of enlarged cross-sectional view of the structure (state for being filled with adhering resin) of the bonding portion of nozzle 120.
As shown in figure 13, between the upper surface 110A of the bottom surface 121B and ceramic package 110 that are formed in nozzle 120
Fill the first adhering resin 131 in gap (hereinafter, being expressed as " the first gap ").First adhering resin 131 is mainly used for keeping
The more soft adhering resin of the air-tightness of the inner space of semiconductor sensor arrangement 100.For example, to the first adhering resin
131 use the fluorine resin etc. with drug resistance.Here, it is to be difficult to ensure enough to be only close to bottom surface 121B and upper surface 110A
Sealing it is thick, therefore by forming the first gap therebetween, it can be ensured that formed by the first adhering resin 131 enough
Sealing it is thick.Particularly, by using the first more soft adhering resin 131, the leakproofness in the first gap can be improved.And
And as shown in figure 13, the open space 111 in the first gap, 123 sides are interdicted by the peripheral surface of order difference part 128.First is viscous as a result,
It connects resin 131 not overflowing to open space 111,123, can equably be extended in the first gap.
On the other hand, it is being formed between the inner surface and the inner surface of recessed portion 119L, 119R of insertion section 125,126
Gap (hereinafter, being expressed as " the second gap ") fill the second adhering resin 132.Second adhering resin 132 is mainly used for carrying
High ceramic package 110 and (at least than 131 hard of the first adhering resin) of the comparison hard of the adhesive strength of nozzle 120 are viscous
Connect resin.For example, using silicon system resin, epoxy system resin etc. to the second adhering resin 132.Here, only making insertion section 125,126
It is close to be to be difficult to ensure enough seal thickness with recessed portion 119L, 119R, therefore by being formed between second therebetween
Gap, it can be ensured that the enough sealings formed by the second adhering resin 132 are thick.Particularly, by using comparing the second of hard
Adhering resin 132, so as to blocked with the bonding portion formed by second adhering resin 132 nozzle 120 is applied it is outer
Power.The hair that is, load of the first adhering resin 131 can be reduced, therefore the problems such as the first adhering resin 131 can be inhibited damaged
It is raw.Moreover, as shown in figure 13, the lower end of recessed portion 119L, 119R are closed by bottom surface 119La, 119Ra.Second is viscous as a result,
The lower section of ceramic package 110 will not be dripped to by connecing resin 132, can in the second gap uniform expansion.But bottom surface 119La,
119Ra is not essential structure, and recessed portion 119L, 119R can also be shape of the perforation to the lower section of ceramic package 110.
In this way, present embodiment glues ceramic package 110 and nozzle 120 in the first gap using more soft first
It connects resin 131 to be mutually bonded, be mutually bonded using the second adhering resin 132 for comparing hard in the second gap.Thereby, it is possible to both
The air tightness of the inner space of semiconductor sensor arrangement 100 is improved, and improves the patience to external force.That is, nozzle can be improved
The leakproofness and patience of 120 bonding portion, therefore the reliability of semiconductor sensor arrangement 100 can be further increased.
More than, the preferred embodiments of the present invention is described in detail, but the present invention is not limited to this
A little embodiments can carry out various modifications or change in the range of the spirit of the invention that technical solution is recorded.
Claims (6)
1. a kind of semiconductor sensor arrangement, has：
Ceramic package；
Semiconducting sensor element is configured in the plane in the open space of above-mentioned ceramic package, and is detected pressure and be situated between
The pressure of matter；And
Nozzle is arranged in a manner of covering above-mentioned open space, and above-mentioned pressure medium is guided into above-mentioned open space,
Above-mentioned semiconductor sensor arrangement is characterized in that,
Said nozzle has to above-mentioned ceramic package side insertion section outstanding,
The recessed portion being inserted into for above-mentioned insertion section is formed in the side of above-mentioned ceramic package,
Above-mentioned insertion section and above-mentioned recessed portion by least than being mutually bonded by the second adhering resin of the first adhering resin hard,
Joint surface of above-mentioned first adhering resin for above-mentioned ceramic package is bonding with the joint surface of said nozzle.
2. semiconductor sensor arrangement according to claim 1, which is characterized in that
In the joint surface formed by above-mentioned first adhering resin and said nozzle in above-mentioned ceramic package by above-mentioned
At least one party on the joint surface that one adhering resin is formed is equipped with the protrusion for forming gap therebetween.
3. semiconductor sensor arrangement according to claim 2, which is characterized in that
The opposed faces with above-mentioned ceramic package in said nozzle are formed with the above-mentioned opening of embedded above-mentioned ceramic package
The order difference part of the convex in space,
The above-mentioned gap formed by above-mentioned protrusion is embedded into the above-mentioned order difference part of above-mentioned open space from above-mentioned open space
Blocking.
4. semiconductor sensor arrangement according to any one of claim 1 to 3, which is characterized in that
For above-mentioned recessed portion in the open-ended for the side that said nozzle is inserted into, the end in the side being inserted into said nozzle is opposite
Side end-enclosed.
5. semiconductor sensor arrangement according to any one of claim 1 to 3, which is characterized in that
It is be bonded by above-mentioned second with above-mentioned insertion section on the joint surface of above-mentioned recessed portion formed by above-mentioned second adhering resin
It is formed with gap between the joint surface that resin is formed.
6. semiconductor sensor arrangement according to claim 4, which is characterized in that
It is be bonded by above-mentioned second with above-mentioned insertion section on the joint surface of above-mentioned recessed portion formed by above-mentioned second adhering resin
It is formed with gap between the joint surface that resin is formed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-031567 | 2017-02-22 | ||
| JP2017031567A JP2018136229A (en) | 2017-02-22 | 2017-02-22 | Semiconductor sensor device |
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| CN108458826A true CN108458826A (en) | 2018-08-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110054141A (en) * | 2019-03-27 | 2019-07-26 | 西人马联合测控（泉州）科技有限公司 | Pressure sensor and its packaging method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110108398A (en) * | 2019-04-29 | 2019-08-09 | 北京遥测技术研究所 | A kind of thin film strain formula pressure sensor that encapsulating structure is thermally isolated |
-
2017
- 2017-02-22 JP JP2017031567A patent/JP2018136229A/en active Pending
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2018
- 2018-02-14 CN CN201810152192.6A patent/CN108458826A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110054141A (en) * | 2019-03-27 | 2019-07-26 | 西人马联合测控（泉州）科技有限公司 | Pressure sensor and its packaging method |
| US20220178773A1 (en) * | 2019-03-27 | 2022-06-09 | Fatri United Testing & Control (Quanzhou) Technologies Co., Ltd. | Pressure sensor and packaging method thereof |
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| JP2018136229A (en) | 2018-08-30 |
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Application publication date: 20180828 |