CN108455979A - A kind of ultralow dielectric microwave dielectric ceramic materials and preparation method thereof - Google Patents
A kind of ultralow dielectric microwave dielectric ceramic materials and preparation method thereof Download PDFInfo
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- C04B2235/3267—MnO2
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
- C04B2235/445—Fluoride containing anions, e.g. fluosilicate
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Abstract
The invention discloses a kind of ultralow dielectric microwave dielectric ceramic materials, are made of the sintering of following mass percent component raw material：Melting silicon powder accounts for 93~95%, and nanometer silica flour accounts for 2~4%, CaF2Account for 0.5~2.5%, MnO20.5~2.5% is accounted for, the principal goods of the ultralow dielectric microwave dielectric ceramic materials is mutually crystalline state SiO2.The invention also discloses the preparation method of ultralow dielectric microwave dielectric ceramic materials, S1, ground and mixed CaF2And MnO2Powder；S2, mixed melting silicon powder and nanometer silica flour simultaneously add the CaF that step S1 is obtained2And MnO2Mixed powder carries out wet ball grinding and obtains mixture again；The mixture and granulation that S3, baking step S2 are obtained are pressed into blank, and blank is sintered to obtain ceramic material.Ultralow dielectric microwave dielectric ceramic materials raw material sources of the present invention are extensive, preparation method is easy, be conducive to production application, the ceramic dielectric constant of acquisition is low, and temperature coefficient of resonance frequency nearly zero can be widely applied to the manufacture of the microwave devices such as microwave base plate, missile-borne radome.
Description
Technical field
The present invention relates to a kind of ceramic materials and preparation method thereof, more particularly to a kind of ultralow dielectric microwave-medium
Ceramic material and preparation method thereof.
Background technology
In microwave communication system, body making material of the microwave dielectric material as all kinds of microwave devices, performance
Key effect is played to the stabilization and communication quality of entire communication system.In recent years, with wireless telecommunications, wireless network, satellite
The technologies such as live telecast, bluetooth, global positioning system and military guidance grow rapidly, the high frequency of microwave equipment, it is integrated,
High stability and it is cost effective have become inexorable trend, communication frequency of today is continuously improved so that signal delay, equipment heating
A series of problems, such as amount increases, system stability is deteriorated is increasingly apparent.
In microwave dielectric material, advanced low-k materials can reduce dielectric material and make with interelectrode coupling interaction
With raising signal transmission rate, nearly zero temperature coefficient of resonance frequency can improve the stability of system.It is situated between in numerous microwaves
In material system, SiO2Ceramic material has of low cost, the advantages such as dependable performance, is a kind of low Jie of great business potential
Electric constant microwave dielectric ceramic materials.However, preparing high-performance SiO2Microwave dielectric ceramic materials have the following problems：SiO2
1600 DEG C or more can sinter porcelain into, and consistency is not high, although the introducing of auxiliary agent can reduce sintering temperature, also can simultaneously
Cause dielectric constant to be substantially increased, the signal transmission rate of electronic component, while SiO can not be improved2The negative resonant frequency of ceramics
Temperature coefficient is easy to cause that its working frequency is unstable, can not ensure the accurate transmitting-receiving of signal.Therefore, it is normal to research and develop ultralow dielectric
The SiO of number, near-zero resonance frequency temperature coefficient2Base microwave medium ceramic material is current critical issue urgently to be resolved hurrily.
Invention content
In view of the above-mentioned defects in the prior art, the present invention provides a kind of ultralow dielectric microwave dielectric ceramic materials,
It is with ultralow dielectric and temperature coefficient of resonance frequency is close to zero, solves current material dielectric constant and resonant frequency
The problems such as temperature coefficient is high, and sintering characteristic is poor.The present invention also provides a kind of ultralow dielectric microwave dielectric ceramic materials
Preparation method.
Technical solution of the present invention is as follows：A kind of ultralow dielectric microwave dielectric ceramic materials, by following mass percent
Component raw material sintering is made：Melting silicon powder accounts for 93~95%, and nanometer silica flour accounts for 2~4%, CaF2Account for 0.5~2.5%, MnO2
0.5~2.5% is accounted for, the principal goods of the ultralow dielectric microwave dielectric ceramic materials is mutually crystalline state SiO2。
Further, the dielectric constant of the ultralow dielectric microwave dielectric ceramic materials be 2.4~2.7, quality because
Number is 21628~34451GHz, and temperature coefficient of resonance frequency is -5~7ppm/ DEG C.
Preferably, the purity of the melting silicon powder is more than 99%, and crystallinity is 0~5%, and granularity is 1~1.5 μm, is received
The purity of rice silica flour is more than 99.9%, and granularity is 500~600nm.
Preferably, the CaF2And MnO2It is pure to analyze.
A kind of preparation method of ultralow dielectric microwave dielectric ceramic materials, includes the following steps：S1, ground and mixed
CaF2And MnO2Powder；S2, mixed melting silicon powder and nanometer silica flour simultaneously add the CaF that step S1 is obtained2And MnO2Mixed powder
Body carries out wet ball grinding and obtains mixture again；The mixture and granulation that S3, baking step S2 are obtained are pressed into blank, by blank into
Row sintering obtains ceramic material, and each material quality percentage is：Melting silicon powder accounts for 93~95%, and nanometer silica flour accounts for 2~
4%, CaF2Account for 0.5~2.5%, MnO2Account for 0.5~2.5%.
Further, the ground and mixed of the step S1 is the hand lapping in mortar, 20~30min of milling time, institute
It is to use dry method horizontal barreling, 9~12h of barreling time to state step S2 mixed meltings silicon powder and nanometer silica flour.
Further, the step S2 is that ethyl alcohol is that medium carries out wet method ball after mixed melting silicon powder and nanometer silica flour
1~2h is ground, CaF is then added2And MnO2Powder carries out 5~8h of wet ball grinding.
Further, it is viscous with 1.5~3% additions of the baking step S2 mixture qualities obtained that the step S3, which is granulated,
Knot agent is granulated, and the binder is methylcellulose or stearic acid, accounts for the viscous of the 40~60% of the binder gross mass
Knot agent is mixed with the baking step S2 mixtures obtained, remaining binder is slowly added dropwise in granulation process.
Further, the particle of 150~400 mesh of selection carries out being pressed into blank after the step S3 is granulated.
Preferably, when the sintering with the heating rate of 3~4 DEG C/min 1020~1025 DEG C are risen to from room temperature, then with 1~
The heating rate of 1.5 DEG C/min rises to 1220~1320 DEG C, keeps the temperature 1~3h, furnace cooling after heat preservation.
The advantages of technical solution provided by the present invention, is：Sintering aid CaF2And MnO2And nanometer silica flour adds
Adding can make dielectric constant of the material under microwave frequency band be down to 2.7 hereinafter, ensureing electronic signal high-speed transfer in the devices.It receives
The addition of rice silica flour can make SiO2The temperature coefficient of resonance frequency nearly zero of ceramic material, while block densified sintering product is big
Width is promoted.Nanometer silica flour is dispersed in melting silicon powder using premix mode, ensures ceramic material modified effect
Stablize.The slow sintering process risen of high temperature section can prevent from cracking when silicon powder crystallization, promote material compactness.It is of the invention former
Material derives from a wealth of sources, preparation method is easy, is conducive to production application, the ceramic dielectric constant of acquisition is low, resonant frequency
Temperature coefficient nearly zero, can be widely applied to the manufacture of the microwave devices such as microwave base plate, missile-borne radome.
Description of the drawings
Fig. 1 is the XRD spectrum of ultralow dielectric microwave dielectric ceramic materials of the present invention.
Fig. 2 is the SEM pictures of ultralow dielectric microwave dielectric ceramic materials of the present invention.
Specific implementation mode
With reference to embodiment, the invention will be further described, but not as a limitation of the invention.
Embodiment 1
It weighs sintering aid and analyzes pure CaF20.5g, the pure MnO of analysis22.5g is placed in hand lapping 20min in agate mortar
It is spare afterwards, it weighs purity and is more than 99%, crystallinity is 0~5%, and granularity is that 1~1.5 μm of melting silicon powder 95g and purity are more than
99.9%, granularity is that 500nm nanometers of silica flour 2g are placed in barreling 9h in barreling tank, and mixed powder taking-up is placed on ball grinder
In, it is taken out by medium mixing 1h of ethyl alcohol, adds the CaF after hand lapping in the slurry2+MnO2The last continuation ball milling of auxiliary powder
5h, it is dry after powder in the methylcellulose mixing for accounting for powder 0.6wt% is first added, in granulation process again slowly dropwise plus
The methylcellulose for entering to account for powder 0.9wt% is granulated, the screened coarse powder obtained between the mesh of 150 mesh~400 of granulation material, so
It is fitted into cold moudling in metal die afterwards, molding block is placed in high temperature furnace, molding block is placed in high temperature furnace with 3
DEG C/min rises to 1020 DEG C, then rises to 1220 DEG C with 1 DEG C/min, keep the temperature furnace cooling after 1h.It is micro- that ultralow dielectric is made
The microwave dielectric property of wave medium ceramic material：Permittivity εr=2.7, quality factor q × f=34451GHz, resonant frequency
Temperature coefficient τf=-5ppm/ DEG C, XRD spectrum and SEM pictures difference are as depicted in figs. 1 and 2.
Embodiment 2
It weighs sintering aid and analyzes pure CaF21g, the pure MnO of analysis22g is placed in hand lapping 25min standby in agate mortar
With, weigh purity be more than 99%, crystallinity be 0~5%, granularity be 1~1.5 μm melting silicon powder 94.5g and purity be more than
99.9%, granularity is that 500nm nanometers of silica flour 2.5g are placed in barreling tank and barreling 10h, mixed powder taking-up are placed on
It in ball grinder, is taken out by medium mixing 1h of ethyl alcohol, adds the CaF after hand lapping in the slurry2+MnO2Auxiliary powder it is last after
Continue ball milling 6h, the methylcellulose mixing for accounting for powder 1.5wt% is first added in the powder after drying, in granulation process again slowly
It is added dropwise and accounts for the methylcellulose of powder 1.5wt% and be granulated, between the mesh of 150 mesh of the screened acquisition of granulation material~400
Coarse powder is then charged into cold moudling in metal die, molding block is placed in high temperature furnace, molding block is placed in high temperature
1025 DEG C are risen to 3 DEG C/min in stove, then rises to 1250 DEG C with 1.5 DEG C/min, keeps the temperature furnace cooling after 2h.Ultralow Jie is made
The microwave dielectric property of electric constant microwave dielectric ceramic materials：Permittivity εr=2.6, quality factor q × f=30561GHz,
Temperature coefficient of resonance frequency τf=-2ppm/ DEG C.
Embodiment 3
It weighs sintering aid and analyzes pure CaF21.5g, the pure MnO of analysis21.5g is placed in hand lapping 30min in agate mortar
It is spare afterwards, it weighs purity and is more than 99%, crystallinity is 0~5%, and granularity is that 1~1.5 μm of melting silicon powder 94g and purity are more than
99.9%, granularity is that 500nm nanometers of silica flour 3g are placed in barreling tank and barreling 11h, mixed powder taking-up are placed on ball
It in grinding jar, is taken out by medium mixing 1.5h of ethyl alcohol, adds the CaF after hand lapping in the slurry2+MnO2Auxiliary powder it is last after
Continuous ball milling 7h, it is dry after powder in the stearic acid mixing for accounting for powder 0.6wt% is first added, in granulation process again slowly dropwise
It is added and accounts for the stearic acid of powder 0.9wt% and be granulated, granulation material is screened to obtain coarse powder between the mesh of 150 mesh~400, then
It is fitted into cold moudling in metal die, molding block is placed in high temperature furnace, molding block is placed in high temperature furnace with 3.5
DEG C/min rises to 1020 DEG C, then rises to 1260 DEG C with 1 DEG C/min, keep the temperature furnace cooling after 2h.It is micro- that ultralow dielectric is made
The microwave dielectric property of wave medium ceramic material：Permittivity εr=2.6, quality factor q × f=27258GHz, resonant frequency
Temperature coefficient τf=0ppm/ DEG C
Embodiment 4
It weighs sintering aid and analyzes pure CaF22g, the pure MnO of analysis21g is placed in hand lapping 25min standby in agate mortar
With, weigh purity be more than 99%, crystallinity be 0~5%, granularity be 1~1.5 μm melting silicon powder 93.5g and purity be more than
99.9%, granularity is that 500nm nanometers of silica flour 3.5g are placed in barreling tank and barreling 12h, mixed powder taking-up are placed on
It in ball grinder, is taken out by medium mixing 1.5h of ethyl alcohol, adds the CaF after hand lapping in the slurry2+MnO2Auxiliary powder is last
Continue ball milling 8h, it is dry after powder in the stearic acid mixing for accounting for powder 1.2wt% is first added, in granulation process again slowly by
It is added dropwise to and accounts for the stearic acid of powder 0.8wt% and be granulated, granulation material is screened to obtain coarse powder between the mesh of 150 mesh~400, so
It is fitted into cold moudling in metal die afterwards, molding block is placed in high temperature furnace, molding block is placed in high temperature furnace with 4
DEG C/min rises to 1025 DEG C, then rises to 1280 DEG C with 1.5 DEG C/min, keep the temperature furnace cooling after 3h.Ultralow dielectric is made
The microwave dielectric property of microwave dielectric ceramic materials：Permittivity εr=2.5, quality factor q × f=24120GHz, resonance frequency
Rate temperature coefficient τf=3ppm/ DEG C.
Embodiment 5
It weighs sintering aid and analyzes pure CaF22.5g, the pure MnO of analysis20.5g is placed in hand lapping 20min in agate mortar
It is spare afterwards, it weighs purity and is more than 99%, crystallinity is 0~5%, and granularity is that 1~1.5 μm of melting silicon powder 93g and purity are more than
99.9%, granularity is that 500nm nanometers of silica flour 4g are placed in barreling tank and barreling 10h, mixed powder taking-up are placed on ball
It in grinding jar, is taken out by medium mixing 2h of ethyl alcohol, adds the CaF after hand lapping in the slurry2+MnO2The last continuation of auxiliary powder
Ball milling 8h, it is dry after powder in the stearic acid mixing for accounting for powder 1.5wt% is first added, in granulation process again slowly dropwise plus
The stearic acid for entering to account for powder 1.5wt% is granulated, then the screened coarse powder obtained between the mesh of 150 mesh~400 of granulation material fills
Enter cold moudling in metal die, by molding block be placed in high temperature furnace by molding block be placed in high temperature furnace with 3 DEG C/
Min rises to 1020 DEG C, then rises to 1320 DEG C with 1 DEG C/min, keeps the temperature furnace cooling after 2h.Ultralow dielectric microwave is made to be situated between
The microwave dielectric property of ceramics：Permittivity εr=2.4, quality factor q × f=21628GHz, resonant frequency temperature
Coefficient τf=7ppm/ DEG C.
Claims (10)
1. a kind of ultralow dielectric microwave dielectric ceramic materials, which is characterized in that burnt by following mass percent component raw material
Knot is made：Melting silicon powder accounts for 93~95%, and nanometer silica flour accounts for 2~4%, CaF2Account for 0.5~2.5%, MnO2Account for 0.5~
2.5%, the principal goods of the ultralow dielectric microwave dielectric ceramic materials is mutually crystalline state SiO2。
2. ultralow dielectric microwave dielectric ceramic materials according to claim 1, which is characterized in that the ultralow dielectric
The dielectric constant of constant microwave dielectric ceramic materials is 2.4~2.7, and quality factor are 21628~34451GHz, resonant frequency temperature
It is -5~7ppm/ DEG C to spend coefficient.
3. ultralow dielectric microwave dielectric ceramic materials according to claim 1, which is characterized in that the molten silicon is micro-
The purity of powder is more than 99%, and crystallinity is 0~5%, and granularity is 1~1.5 μm, and the purity of nanometer silica flour is more than 99.9%, grain
Degree is 500~600nm.
4. ultralow dielectric microwave dielectric ceramic materials according to claim 1, which is characterized in that the CaF2With
MnO2It is pure to analyze.
5. a kind of preparation method of ultralow dielectric microwave dielectric ceramic materials, which is characterized in that include the following steps：S1、
Ground and mixed CaF2And MnO2Powder；S2, mixed melting silicon powder and nanometer silica flour simultaneously add the CaF that step S1 is obtained2With
MnO2Mixed powder carries out wet ball grinding and obtains mixture again；The mixture and granulation that S3, baking step S2 are obtained are pressed into base
Material, blank is sintered to obtain ceramic material, each material quality percentage is：Melting silicon powder accounts for 93~95%, nanometer stone
English powder accounts for 2~4%, CaF2Account for 0.5~2.5%, MnO2Account for 0.5~2.5%.
6. the preparation method of ultralow dielectric microwave dielectric ceramic materials according to claim 5, which is characterized in that institute
The ground and mixed for stating step S1 is the hand lapping in mortar, and 20~30min of milling time, the step S2 mixed melting silicon is micro-
Powder and nanometer silica flour are to use dry method horizontal barreling, 9~12h of barreling time.
7. the preparation method of ultralow dielectric microwave dielectric ceramic materials according to claim 5, which is characterized in that institute
It is that ethyl alcohol is that medium carries out 1~2h of wet ball grinding after mixed melting silicon powder and nanometer silica flour to state step S2, is then added
CaF2And MnO2Powder carries out 5~8h of wet ball grinding.
8. the preparation method of ultralow dielectric microwave dielectric ceramic materials according to claim 5, which is characterized in that institute
Stating step S3 and being granulated is granulated with 1.5~3% addition binders of the baking step S2 mixture qualities obtained, described viscous
It is methylcellulose or stearic acid to tie agent, and 40~60% binder and baking step S2 for accounting for the binder gross mass obtain
Mixture mixing, remaining binder is slowly added dropwise in granulation process.
9. the preparation method of ultralow dielectric microwave dielectric ceramic materials according to claim 5, which is characterized in that institute
The particle for stating 150~400 mesh of selection after step S3 is granulated carries out being pressed into blank.
10. the preparation method of ultralow dielectric microwave dielectric ceramic materials according to claim 5, which is characterized in that
1020~1025 DEG C are risen to from room temperature with the heating rate of 3~4 DEG C/min when the sintering, then with the heating of 1~1.5 DEG C/min
Speed rises to 1220~1320 DEG C, keeps the temperature 1~3h, furnace cooling after heat preservation.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109320263A (en) * | 2018-11-13 | 2019-02-12 | 四川航天机电工程研究所 | Sintering aid and quartz-ceramics and its preparation and application method |
| CN111718197A (en) * | 2019-03-20 | 2020-09-29 | 山东工业陶瓷研究设计院有限公司 | Thin quartz ceramic component and efficient preparation method thereof |
| CN114744177A (en) * | 2022-04-29 | 2022-07-12 | 安徽科技学院 | Preparation method of porous silicon manganese dioxide composite anode material |
| CN115784736A (en) * | 2022-11-24 | 2023-03-14 | 江苏省陶瓷研究所有限公司 | PTC heating ceramic with no orange spots on surface and high resistance temperature and preparation method thereof |
| CN115925389A (en) * | 2022-12-13 | 2023-04-07 | 常熟理工学院 | Coal-series kaolin mineral microwave dielectric ceramic material and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0211619A2 (en) * | 1985-08-05 | 1987-02-25 | Hitachi, Ltd. | A multilayer ceramic circuit board |
| KR20040040696A (en) * | 2002-11-07 | 2004-05-13 | 자화전자 주식회사 | Dielectric Ceramic Compositions for Low Temperature Firing |
| CN101696105A (en) * | 2009-10-29 | 2010-04-21 | 昆明理工大学 | Microwave metallurgical wave-transmitting ceramic material and preparation method thereof |
-
2018
- 2018-04-18 CN CN201810349610.0A patent/CN108455979B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0211619A2 (en) * | 1985-08-05 | 1987-02-25 | Hitachi, Ltd. | A multilayer ceramic circuit board |
| KR20040040696A (en) * | 2002-11-07 | 2004-05-13 | 자화전자 주식회사 | Dielectric Ceramic Compositions for Low Temperature Firing |
| CN101696105A (en) * | 2009-10-29 | 2010-04-21 | 昆明理工大学 | Microwave metallurgical wave-transmitting ceramic material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| YONG FANG 等: "Preparation and microwave dielectric properties of cristobalite ceramics", 《CERAMICS INTERNATIONAL》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109320263A (en) * | 2018-11-13 | 2019-02-12 | 四川航天机电工程研究所 | Sintering aid and quartz-ceramics and its preparation and application method |
| CN109320263B (en) * | 2018-11-13 | 2022-03-22 | 四川航天机电工程研究所 | Sintering aid, quartz ceramic, and preparation and application methods thereof |
| CN111718197A (en) * | 2019-03-20 | 2020-09-29 | 山东工业陶瓷研究设计院有限公司 | Thin quartz ceramic component and efficient preparation method thereof |
| CN114744177A (en) * | 2022-04-29 | 2022-07-12 | 安徽科技学院 | Preparation method of porous silicon manganese dioxide composite anode material |
| CN115784736A (en) * | 2022-11-24 | 2023-03-14 | 江苏省陶瓷研究所有限公司 | PTC heating ceramic with no orange spots on surface and high resistance temperature and preparation method thereof |
| CN115784736B (en) * | 2022-11-24 | 2024-01-26 | 江苏省陶瓷研究所有限公司 | PTC heating ceramic with no orange spots on surface and high temperature resistance and preparation method thereof |
| CN115925389A (en) * | 2022-12-13 | 2023-04-07 | 常熟理工学院 | Coal-series kaolin mineral microwave dielectric ceramic material and preparation method thereof |
| CN115925389B (en) * | 2022-12-13 | 2023-09-22 | 常熟理工学院 | Coal-based kaolin mineral microwave dielectric ceramic material and preparation method thereof |
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