CN108453330A - A method of substrate for soldering and preparation method thereof and soldering - Google Patents
A method of substrate for soldering and preparation method thereof and soldering Download PDFInfo
- Publication number
- CN108453330A CN108453330A CN201710086733.5A CN201710086733A CN108453330A CN 108453330 A CN108453330 A CN 108453330A CN 201710086733 A CN201710086733 A CN 201710086733A CN 108453330 A CN108453330 A CN 108453330A
- Authority
- CN
- China
- Prior art keywords
- groove
- substrate
- soldering
- nano
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
This disclosure relates to a kind of method of substrate and preparation method thereof and soldering for soldering, which includes substrate body (1), be formed in the substrate body (1) at least part surface groove (2) and be deposited on the substrate body (1) formation fluted (2) surface region on nano-particle layer (4).The disclosure can improve the wettability and wetting speed of the substrate surface for soldering by having the substrate body surface of micron level groove to deposit nano-particle layer on surface.Using the substrate for soldering of the disclosure when being brazed, the intensity and reliability of soldered fitting can be increased.
Description
Technical field
This disclosure relates to technical field of semiconductors, and in particular, to a kind of substrate and preparation method thereof for soldering with
And the method for soldering.
Background technology
Main means one of of the soldering tech as connecting dissimilar material, are widely used in aerospace, military project, vacuum
The fields such as equipment.And wherein, solder is to determine brazing quality and applicable model to the wetability and spreading ability of connected material
The most important feature enclosed.Document " D.Q Yu, J Zhao, L Wang.Improvement on the microstructure
stability,mechanical and wetting properties of Sn–Ag–Cu lead-free solder with
the addition of rare earth elements[J].Journal of alloys and compounds,2004,
376(1):170-175. " discloses a kind of method for adding rare earth element in solder, can solve solder to a certain extent and exist
Wetting out problems on substrate.But the applicable solder type of this method is limited, and will produce intermetallic compound in brazing process,
Brazing quality is had an impact.
Therefore, it keeps solder element composition constant, improve solder wetting from change substrate surface structures and sprawls
Ability becomes one of the Main way of research.
Invention content
The purpose of the disclosure is:First aspect provides a kind of substrate for soldering, and second aspect provides a kind of for pricker
The preparation method of the substrate of weldering, the third aspect provide it is a kind of using disclosure first aspect provided for soldering substrate into
The method of row soldering, the disclosure provided for soldering substrate and using prepared by method of disclosure for soldering
Substrate has high wettability energy and wetting speed.
To achieve the goals above, disclosure first aspect:There is provided it is a kind of for soldering substrate, including substrate body,
Be formed in the groove at least part surface of the substrate body and be deposited on the substrate body formation it is reeded
Nano-particle layer in surface region.
Optionally, the depth capacity of the groove is 5-200 microns, and maximum width is 10-200 microns.
Optionally, the length of the groove is more than 1 millimeter.
Optionally, along the length direction perpendicular to groove, the profile of the groove be selected from arc, " Qian " shape, " V " shape and
At least one of " u "-shaped.
Optionally, along the length direction of groove, the groove type, which becomes, to be mutually parallel and/or cross one another a plurality of.
Optionally, the angle of cross one another groove is 60-90 °, and the innermost distance of adjacent two parallel grooves is
10-500 microns.
Optionally, the thickness of the nano-particle layer is 0.1-5 micron, and porosity is 5-90 body %, in nano-particle layer
The diameter of nano particle is less than 1000 nanometers.
Optionally, the material of the substrate body and the material of nano particle are each independently metal material, semiconductor
Material, ceramic material or ceramic matric composite.
Disclosure second aspect:A kind of preparation method of the substrate for soldering is provided, which includes:In substrate
Groove is formed at least part surface of ontology, the depth capacity and maximum width of the groove are respectively less than 1000 microns;With
There is the surface region of the groove to deposit nano-particle layer in the formation of substrate body, obtains the substrate for soldering.
Optionally, the depth capacity of the groove is 5-200 microns, and maximum width is 10-200 microns.
Optionally, the length of the groove is more than 1 millimeter.
Optionally, along perpendicular to the direction of groove length, the profile of the groove be selected from arc, " Qian " shape, " V " shape and
At least one of " u "-shaped.
Optionally, along the direction of groove length, the groove type, which becomes, to be mutually parallel and/or cross one another a plurality of.
Optionally, the angle of cross one another groove is 60-90 °, and the innermost distance of adjacent two parallel grooves is
10-500 microns.
Optionally, the thickness of the nano-particle layer is 0.1-5 micron, and porosity is 5-90 body %, in nano-particle layer
The diameter of nano particle is less than 1000 nanometers.
Optionally, using in mechanical processing, laser processing, electrolysis, chemical etching, photoetching, coining and 3D printing
At least one mode forms the groove on the surface of substrate body;Wherein, it is micro- to be less than 5 for the surface roughness of the substrate body
Rice.
Optionally, this method further includes:Cleaning impurity is carried out after the surface of substrate body forms the groove;Its
In, the impurity includes particulate matter.
Optionally, the mode of the deposition nano-particle layer is selected from laser deposition, magnetron sputtering, spin coating method, physics gas
Mutually at least one of deposition and chemical vapor deposition.
Optionally, the material of the substrate body and the material of nano particle are each independently metal material, semiconductor
Material, ceramic material or ceramic matric composite.
The disclosure third aspect:There is provided what the substrate for soldering that a kind of disclosure first aspect is provided was brazed
Method, this method include:There is the surface region of nano-particle layer to go forward side by side using solder in the deposition of the substrate for soldering
Row soldering.
Optionally, the condition of the soldering includes:The temperature of the soldering is 150-450 DEG C, and solder is to be closed selected from tin-lead
Gold, red brass, lead bismuth alloy, cazin, sn-ag alloy, gun-metal, tin-lead silver alloy, rose metal, tin-lead copper
At least one of alloy and cu-zn-al alloy;Or the temperature of the soldering is 650-1150 DEG C, solder is selected from Kufil
At least one of gold, copper silver titanium alloy, copper and indium titanium alloy, yellow gold and nickel bismuth boron alloy.
The disclosure on surface by having the surface region of the substrate body of micron level groove to deposit nano-particle layer, energy
Enough wettabilities and wetting speed for improving the substrate surface for soldering.Pricker is carried out using the substrate for soldering of the disclosure
When weldering, the intensity and reliability of soldered fitting can be increased.
Other feature and advantage of the disclosure will be described in detail in subsequent specific embodiment part.
Description of the drawings
Attached drawing is for providing further understanding of the disclosure, and a part for constitution instruction, with following tool
Body embodiment is used to explain the disclosure together, but does not constitute the limitation to the disclosure.In attached drawing only schematically
It shows, does not limit the relationship between each structure actual size and each structure.In the accompanying drawings:
Fig. 1 is a kind of structural schematic diagram of specific implementation mode of disclosure substrate body surface groove.
Fig. 2 is the structural schematic diagram of another specific implementation mode of disclosure substrate body surface groove.
Fig. 3 is stream of the disclosure for a kind of specific implementation mode of cleaning impurity step in the base plate preparation method of soldering
Journey schematic diagram.
Fig. 4 is a kind of substrate partial structural diagram of specific implementation mode of the disclosure for soldering.
Fig. 5 is that (abscissa is particle diameter, and unit is for the grain size distribution of nano particle in disclosure nano-particle layer
nm;Ordinate is nano particle quantitative proportion percentage, %).
Fig. 6 is partial structural diagram of the disclosure for the substrate another kind specific implementation mode of soldering.
Reference sign
1 substrate body, 2 groove, 3 diluted acid
4 nano-particle layer, 5 nano particle
Specific implementation mode
The specific implementation mode of the disclosure is described in detail below in conjunction with attached drawing.It should be understood that this place is retouched
The specific implementation mode stated is only used for describing and explaining the disclosure, is not limited to the disclosure.
If without other explanations, the length of disclosure further groove and the width of groove refer both to groove edge and are parallel to substrate body table
The distance that the direction in face is extended, and the direction that recess width extends is perpendicular to the direction that groove length extends, the length of groove
More than the width of groove.The depth of groove refers to that texturearunaperpendicular extends internally distance in substrate surface to substrate body.
As shown in figs. 4 and 6, disclosure first aspect:A kind of substrate for soldering, including substrate body 1, formation are provided
In at least part surface of the substrate body 1 groove 2 and be deposited on the substrate body 1 form fluted 2
Nano-particle layer 4 in surface region.
According to the disclosure in a first aspect, depositing nano-particle layer, energy on the surface of the reeded substrate body of surface band
The substrate surface for being enough used in soldering forms the gap and channel of a large amount of microns and Nano grade, passes through the gap and channel pair
The capillary force of liquid effectively increases the driving force needed for liquid wet processes, wetability of the raising liquid in substrate surface
(contact angle of liquid can be reduced, the contact area of liquid and substrate is improved) and wetting speed, using the disclosure for being brazed
Substrate when being brazed, the intensity and reliability of soldered fitting can be increased.
According to the disclosure in a first aspect, groove refers to the recess of the strip formed on substrate body surface, Ke Yiwei
It periodically or non-periodically arranges, concrete shape can be as depicted in figs. 1 and 2.As shown in Figure 1, the depth capacity of the groove
(h) it is preferably 5-200 microns, maximum width (w) is preferably 10-200 microns.By the way that groove is arranged, can make to be attached to be used for
The liquid of the substrate surface of soldering along the length of groove, width and depth direction carry out three-dimensional sprawl, increase liquid with
Driving force is sprawled in the substrate surface of soldering, to improving the wettability and spreading rate of substrate.
According to the disclosure in a first aspect, as shown in Fig. 1,2,4 and 6, edge is perpendicular to the direction of groove length, the groove
Profile can be selected from least one of arc, " Qian " shape, " V " shape and " u "-shaped, can also be waveform or random shape
Shape.Shown arc is preferably that radian is more than 10 ° less than 90 °, and more preferably higher than 50 ° are less than 90 °.The profile of the groove is
" Qian " shape and " u "-shaped can improve the speed that liquid is sprawled along depth of groove (h) direction, increase the capillarity of microchannel
Power, but the nano particle deposited in recess sidewall can be made to reduce, the thickness of nano-particle layer reduces, to reduce nanoscale
Other gap and channel reduce the capillary force of nanovoids and channel, and therefore, the disclosure preferably uses " V " shape and arc
The groove of profile, more preferably " V " shape.
According to the disclosure in a first aspect, the disclosure to the length of groove there is no specifically limited, according to preparation process's
Difference, such as monoblock substrate body can be passed through, can also be more than 1 millimeter, disclosure groove extends along its length
Shape can be arc, or the global pattern of linear or fold-line-shaped, formed groove can be striated and net
Trellis etc..For example, as shown in Fig. 2, along the direction of groove length, the groove can be formed as being mutually parallel and/or mutually hand over
That pitches is a plurality of, preferably cross one another a plurality of, and liquid is facilitated to be sprawled between the groove of intersection, improves spreading rate, more excellent
It is selected as intersecting and being mutually parallel a plurality of, for example formed as latticed, not only improve liquid and sprawl, also help groove
Molding, and it is uniform facilitate mass prepare substrate body.It is further preferred that the angle of cross one another groove is
60-90 °, for example, 60 ° or 90 °, so that groove just can separate to homalographic the surface of substrate body, such as between groove
Form the patterns such as equilateral triangle, square or regular hexagon.In addition, as shown in Figure 1, adjacent two parallel grooves are innermost
Distance (d) can be 10-500 micron, if texturearunaperpendicular in length direction profile be " Qian " shape, waveform or random shape,
Then the distance (d) is the distance in adjacent grooves bottom centre position, and such setting can make same drop of liquid, and (diameter is about 3600
Micron) by across a plurality of groove, improving drop spreads speed, while improving the intensity and reliability of soldered fitting.
According to the disclosure in a first aspect, nano-particle layer is the stratum granulosum made of nanoparticle deposition, the nanometer
Particle refers to grain size in 1000 nanometers of particles below, and according to the difference of depositional mode, the property of formed nano-particle layer has
Institute is different.As shown in figs. 4 and 6, the thickness of the nano-particle layer can be 0.1-5 microns, and porosity can be 5-90 body %,
The diameter of nano particle is preferably smaller than 500 nanometers in nano-particle layer.The diameter of nano particle is bigger, and porosity is bigger, then receives
The gap formed between rice grain is bigger, and liquid diffusional resistance is smaller, is more conducive to the diffusion of liquid, but can make nanometer
Grain surface area decline, so that capillary force is reduced, at the same can reduce nano-particle layer substrate body surface adhesive force, therefore,
The thickness of the preferred nano-particle layer of the disclosure is 0.3-2 microns, and porosity 25-55%, the diameter of nano particle is 10~500
Between nanometer, more preferably the diameter of nano particle is in normal distribution, further preferred 80 volume % between 10-500 nanometers
Above nano particle is between 10~300 nanometers.The porosity refers to pore volume and nano particle in nano-particle layer
The percentage of layer total volume.
According to the disclosure in a first aspect, substrate is well-known to those skilled in the art, the disclosure repeats no more, described
The material of substrate body can be metal material, semi-conducting material, ceramic material or ceramic matric composite, the material of nano particle
Material may be the same or different with the material of substrate or the material of solder, and those skilled in the art can carry out as needed
Selection.The metal material can be selected from least one of aluminium, aluminium alloy, copper, iron, molybdenum and silicon steel, the semiconductor material
Material can be silicon or GaAs etc., the ceramic material can be selected from least one of aluminium oxide, silicon nitride and aluminium carbide,
Ceramic matric composite generally comprises ceramic material and other materials.
Disclosure second aspect:A kind of preparation method of the substrate for soldering is provided, which includes:In substrate
Groove is formed at least part surface of ontology, the depth capacity and maximum width of the groove are respectively less than 1000 microns;With
There is the surface region of the groove to deposit nano-particle layer in the formation of substrate body, obtains the substrate for soldering.
According to the second aspect of the disclosure, on surface, the surface of the reeded substrate body of band deposits nano-particle layer, energy
The substrate surface for being enough used in soldering forms the gap and channel of a large amount of microns and Nano grade, passes through the gap and channel pair
The capillary force of liquid effectively increases the driving force needed for liquid wet processes, wetability of the raising liquid in substrate surface
(contact angle of liquid can be reduced, the contact area of liquid and substrate is improved) and wetting speed, using the disclosure for being brazed
Substrate when being brazed, the intensity and reliability of soldered fitting can be increased.
According to the second aspect of the disclosure, groove refers to the recess of the strip formed on substrate body surface, Ke Yiwei
It periodically or non-periodically arranges, concrete shape can be as depicted in figs. 1 and 2.As shown in Figure 1, the depth capacity of the groove
(h) it is preferably 5-200 microns, maximum width (w) is preferably 10-200 microns.By the way that groove is arranged, can make to be attached to be used for
The liquid of the substrate surface of soldering along the length of groove, width and depth direction carry out three-dimensional sprawl, increase liquid with
Driving force is sprawled in the substrate surface of soldering, to improving the wettability and spreading rate of substrate.
According to the second aspect of the disclosure, as shown in Fig. 1,2,4 and 6, along perpendicular to the direction of groove length, the groove
Profile can be selected from least one of arc, " Qian " shape, " V " shape and " u "-shaped, can also be waveform or random shape
Shape.Shown arc is preferably that radian is more than 10 ° less than 90 °, and more preferably higher than 50 ° are less than 90 °.The profile of the groove is
" Qian " shape and " u "-shaped can improve the speed that liquid is sprawled along depth of groove (h) direction, increase the capillarity of microchannel
Power, but the nano particle deposited in recess sidewall can be made to reduce, the thickness of nano-particle layer reduces, to reduce nanoscale
Other gap and channel reduce the capillary force of nanovoids and channel, and therefore, the disclosure preferably uses " V " shape and arc
The groove of profile, more preferably " V " shape.
According to the second aspect of the disclosure, the shape that disclosure groove extends along its length can be arc, can also
For linear or fold-line-shaped, for example, as shown in Fig. 2, along the direction of groove length, the groove can be formed as being mutually parallel
And/or it is cross one another a plurality of, it is preferably cross one another a plurality of, facilitate liquid to be sprawled between the groove of intersection, improves paving
Speed is opened up, what is more preferably intersected and be mutually parallel is a plurality of, for example formed as latticed, not only improve liquid and sprawls, also
Be conducive to the molding of groove, and it is uniform facilitate mass prepare substrate body.It is further preferred that cross one another recessed
The angle of slot is 60-90 °, for example, 60 ° or 90 °, so that groove just can separate to homalographic the surface of substrate body, example
Equilateral triangle, square or regular hexagon pattern are intersected to form between such as groove.In addition, as shown in Figure 1, adjacent two parallel
The innermost distance (d) of groove can be 10-500 micron, if texturearunaperpendicular in length direction profile be " Qian " shape, wave
Shape or random shape, then the distance (d) is the distance in adjacent grooves bottom centre position, and such setting can make same drop of liquid
(diameter is about 3600 microns) by across a plurality of groove, improving drop spreads speed, while improve soldered fitting intensity and
Reliability.
According to the second aspect of the disclosure, nano-particle layer is the stratum granulosum made of nanoparticle deposition, the nanometer
Particle refers to grain size in 1000 nanometers of particles below, and according to the difference of depositional mode, the property of formed nano-particle layer has
Institute is different.As shown in figs. 4 and 6, the thickness of the nano-particle layer can be 0.1-5 microns, and porosity can be 5-90 body %,
The diameter of nano particle is preferably smaller than 500 nanometers in nano-particle layer.The diameter of nano particle is bigger, and porosity is bigger, then receives
The gap formed between rice grain is bigger, and liquid diffusional resistance is smaller, is more conducive to the diffusion of liquid, but can make nanometer
Grain surface area decline, so that capillary force is reduced, at the same can reduce nano-particle layer substrate body surface adhesive force, therefore,
The thickness of the preferred nano-particle layer of the disclosure is 0.3-2 microns, and porosity 55-90%, the diameter of nano particle is 10~500
Between nanometer, more preferably the diameter of nano particle is in normal distribution, further preferred 80 volume % between 10-500 nanometers
Above nano particle is between 10~300 nanometers.The porosity refers to pore volume and nano particle in nano-particle layer
The percentage of layer total volume.
According to the second aspect of the disclosure, may be used selected from mechanical processing, laser processing, electrolysis, chemical etching, light
At least one of quarter, coining and 3D printing mode forms the groove on the surface of substrate body;Wherein, the substrate body
Surface roughness be less than 5 microns.The disclosure to the length of groove there is no specifically limited, according to the difference of preparation process, example
Monoblock substrate body can be such as passed through, can also be more than 1 millimeter, the global pattern of formed groove can be striated
With it is latticed etc..The surface roughness of substrate body described in the disclosure with laser confocal microscope (model Olympus,
LEXT OLS4100) it observes and is measured by its software kit.
According to the second aspect of the disclosure, substrate body is processed according to the modes such as mechanical processing or laser processing, is formed
The surface region of the substrate body of groove can adhere to the impurity such as oxide layer, particulate matter, spot, which can influence nano-particle layer
Deposition and follow-up soldering processes, therefore, this method can also include:After the surface of substrate body forms the groove
Carry out cleaning impurity;Wherein, the impurity generally comprises particulate matter, can also include oxide layer and spot etc..Clean impurity
Step can be scrubbed, purged using wind turbine and (such as dilute hydrochloric acid, dilute using diluted acid using cotton swab or cloth
Sulfuric acid etc.) washing by soaking etc., those skilled in the art can also be handled according to actual conditions.
According to the second aspect of the disclosure, deposition nano-particle layer is well-known to those skilled in the art, such as described
The mode for depositing nano-particle layer can be selected from laser deposition, magnetron sputtering, spin coating method, physical vapour deposition (PVD) and chemical gaseous phase
At least one of deposition.
According to the second aspect of the disclosure, substrate body is well-known to those skilled in the art, and the disclosure repeats no more,
For example, the material of the substrate body can be metal material, semi-conducting material, ceramic material or ceramic matric composite, receive
The material of rice grain and the material of the material of substrate or solder may be the same or different, and those skilled in the art can root
According to being selected.The metal material can be selected from least one of aluminium, aluminium alloy, copper, iron, molybdenum and silicon steel, institute
It can be silicon or GaAs etc. to state semi-conducting material, and the ceramic material can be in aluminium oxide, silicon nitride and aluminium carbide
At least one, ceramic matric composite generally comprises ceramic material and other materials.
The disclosure third aspect:There is provided what the substrate for soldering that a kind of disclosure first aspect is provided was brazed
Method, this method include:There is the surface region of nano-particle layer to go forward side by side using solder in the deposition of the substrate for soldering
Row soldering.
According to the third aspect of the disclosure, soldering is to make solder using metal material more low-melting than baseplate material, will be welded
Part and solder heat are less than baseplate material fusion temperature to brazing filler metal fusing point is higher than, and soak substrate using liquid solder, fill connector
Gap and the method for realizing connection weldment with substrate phase counterdiffusion.The condition of the soldering may include:The temperature of the soldering
It it is 150-450 DEG C, solder can be selected from leypewter, red brass, lead bismuth alloy, cazin, sn-ag alloy, Xi Tonghe
At least one of gold, tin-lead silver alloy, rose metal, tin-lead copper alloy and cu-zn-al alloy;Or the temperature of the soldering
Degree can be 650-1150 DEG C, solder can be selected from Kufil, copper silver titanium alloy, copper and indium titanium alloy, yellow gold and
At least one of nickel bismuth boron alloy.
The disclosure is further illustrated by embodiment below in conjunction with attached drawing, but therefore the disclosure is not taken office
What is limited.
In the embodiment of the present disclosure nano particle diameter test method be using scanning electron microscope (model Zeiss,
Supra 55) it observes substrate topography and measures statistics nano particle diameter with ImageJ softwares;Contact angle determination method is
It is directly measured using high temperature high vacuum contact angle measurement (model Dataphysics, OCA25HTV);Spreading rate test side
Method is to measure the distance of metal material flowing within a certain period of time using microscope (model Olympus, SZ61) and record paving
It opens up the time, and then calculates spreading rate;Nano-particle layer porosity test method is using atomic force microscope (model
Bruker, SCD005) it measures substrate topography and calculates nano particle layer porosity with Nanoscope Analysis softwares;
Soldered fitting method for testing shear strength is using thermal-mechanical modeling experimental machine (model Gleeble 1500D) to soldered fitting
Shear strength test is carried out, shear rate is fixed as 1mm/min, obtains shearing strength of joint.
Embodiment 1
As shown in Figure 1, utilizing the side of picosecond laser ablation on Cu substrate bodies (roughness is less than 5 microns) surface of polishing
Method processes periodic grooves 2, and it is 10ps that the laser second, which rushes width, and pulse energy is 50 μ J, sweep speed 1m/s.The two of groove
Wall and lower section seamlessly transit narrowed, and cross section profile is in approximate " u "-shaped, and the maximum width (w) of groove 2 is 40 μm, groove 2
Depth capacity (h) is 40 μm, and the distance between adjacent grooves (d) are 60 μm.As shown in Fig. 2, arranged crosswise between groove, along length
The angle spent between direction groove and groove is 90 °.
It is put into dilute hydrochloric acid solution 3 (a concentration of 3.5 weight %) as shown in figure 3, reeded Cu substrate bodies will be formed
It impregnates 60 seconds, removes surface particles and oxide, and be cleaned by ultrasonic in alcoholic solution, be denoted as substrate body A.
As shown in figure 4, the method deposited with ultrafast laser in the surface region for the substrate body A for processing groove 2 is heavy
Product a layer thickness is 5 μm, the Cu nano-particle layers 4 that porosity is 50 body %, when deposition process, laser pulse width 10ps,
Pulse energy is 60 μ J, and target uses 99.99% pure Cu materials, a diameter of 20nm-500nm of nano particle 5 to be distributed as
Normal distribution as shown in Figure 5, nano particle average grain diameter are 150nm, obtain the substrate A for soldering.
At a temperature of 180 DEG C, measurement obtains SnPbAg solders (62Sn36Pb2Ag, similarly hereinafter) in the substrate A for soldering
The contact angle formed on the surface of nano-particle layer is 5 °, significantly less than its contact angle in the Cu substrate bodies of polishing
(20°);Measurement obtains spreading rate of the SnPbAg solders on the surface that the substrate A for soldering forms nano-particle layer
1.9mm/s, noticeably greater than its spreading rate (0.6mm/s) in the Cu substrate bodies of polishing, soldered fitting shear strength are
60MPa is significantly higher than the soldering strength (50MPa) of polishing Cu substrate bodies.
Embodiment 2
As shown in fig. 6, processing periodic grooves using the method for photoetching in polishing aluminium oxide ceramic substrate body surface
2.The profile of groove section is in " Qian " shape, is arranged in parallel between groove.The maximum width of groove 2 is 200 μm, the maximum of groove 2
Depth is 200 μm, and the maximum distance between adjacent grooves is 300 μm.
Band reeded aluminium oxide ceramic substrate ontology in surface is put into alcoholic solution to be cleaned by ultrasonic, removal surface is dirty
Stain is denoted as substrate body B.
It is 0.3 μm to coat a layer thickness with spin coating method on the surface of the substrate body B of the groove 2 processed, and porosity is
The aluminium oxide ceramics nano-particle layer 4 of 20 body %, 5 a diameter of 20nm-50nm of nano particle, is distributed as normal distribution, obtains
Substrate B for soldering.
At a temperature of 950 DEG C, measurement obtains silver-bearing copper titanium solder (63Ag35Cu2Ti) and is formed in the substrate B for soldering
Contact angle on the surface of nano-particle layer is 2 °, significantly less than its contact angle on the aluminum oxide substrate ontology of polishing
(20°).It is 67 to measure and obtain spreading rate of the silver-bearing copper titanium solder on the surface that the substrate B for soldering forms nano-particle layer
μm/s, noticeably greater than its spreading rate (12.5 μm/s) on the aluminum oxide substrate ontology of polishing, soldered fitting shear strength
For 66MPa, it is significantly higher than the soldering strength (20MPa) of polishing aluminum oxide substrate ontology.
Embodiment 3
Essentially identical with the preparation method of embodiment 1, difference is to make groove type to become " V " shape, i.e., two walls of groove to
Lower is in fix 70 ° of angles to narrow, and the prepared substrate other parameters for soldering are identical, are denoted as the substrate C for soldering.
At a temperature of 180 DEG C, measures and obtain SnPbAg solders in the table for forming nano-particle layer for the substrate C of soldering
Contact angle on face is 3 °, significantly less than its contact angle (20 °) in the Cu substrate bodies of polishing;Measurement obtains SnPbAg prickers
Expect that the spreading rate on the surface that the substrate C for soldering forms nano-particle layer is 2.9mm/s, noticeably greater than it is being polished
Cu substrate bodies on spreading rate (0.8mm/s), soldered fitting shear strength be 65MPa.
Embodiment 4
Essentially identical with the preparation method of embodiment 1, difference lies in the nano-particle layers that the substrate for soldering is deposited
The thickness of middle nano-particle layer is 0.3 μm, obtains the substrate D for soldering.
At a temperature of 180 DEG C, measures and obtain SnPbAg solders in the table for forming nano-particle layer for the substrate D of soldering
Contact angle on face is 2 °, significantly less than its contact angle (20 °) in the Cu substrate bodies of polishing;Measurement obtains SnPbAg prickers
Expect that the spreading rate on the surface that the substrate D for soldering forms nano-particle layer is 3.5mm/s, noticeably greater than it is being polished
Cu substrate bodies on spreading rate (0.8mm/s), soldered fitting shear strength be 66MPa.
Embodiment 5
Essentially identical with the preparation method of embodiment 1, difference lies in the nano-particle layers that the substrate for soldering is deposited
The thickness of middle nano-particle layer is 0.1 μm, obtains the substrate D for soldering.
At a temperature of 180 DEG C, measures and obtain SnPbAg solders in the table for forming nano-particle layer for the substrate D of soldering
Contact angle on face is 8 °, significantly less than its contact angle (20 °) in the Cu substrate bodies of polishing;Measurement obtains SnPbAg prickers
Expect that the spreading rate on the surface that the substrate D for soldering forms nano-particle layer is 1.6mm/s, noticeably greater than it is being polished
Cu substrate bodies on spreading rate (0.8mm/s), soldered fitting shear strength be 59MPa.
Embodiment 6
Essentially identical with the preparation method of embodiment 1, difference lies in the nano-particle layers that the substrate for soldering is deposited
The thickness of middle nano-particle layer is 2 μm, obtains the substrate E for soldering.
At a temperature of 180 DEG C, measures and obtain SnPbAg solders in the table for forming nano-particle layer for the substrate E of soldering
Contact angle on face is 3 °, significantly less than its contact angle (20 °) in the Cu substrate bodies of polishing;Measurement obtains SnPbAg prickers
Expect that the spreading rate on the surface that the substrate E for soldering forms nano-particle layer is 3.2mm/s, noticeably greater than it is being polished
Cu substrate bodies on spreading rate (0.8mm/s), soldered fitting shear strength be 64MPa.
Comparative example 1
For substrate body A prepared by embodiment 1 at a temperature of 180 DEG C, measurement obtains SnPbAg solders in substrate body A
It it is 10 ° with the contact angle on reeded surface, measurement obtains spreading rate of the SnPbAg solders on the surfaces substrate body A and is
1.5mm/s, soldered fitting shear strength are 58MPa.
Comparative example 2
Polishing Cu substrate bodies (roughness be less than 5 microns) surface according to embodiment 1 method ultrafast laser
Vacuum-deposited method deposits the Cu nano-particle layers that a layer thickness is 5 μm, porosity is 50 body %, nano particle it is a diameter of
20nm-500nm is distributed as normal distribution as shown in Figure 5, obtains the substrate D A for soldering.
At a temperature of 180 DEG C, measurement obtains SnPbAg solders has nano-particle layer in the substrate D A depositions for soldering
Surface on contact angle be 8 °, measure and obtain SnPbAg solders and have nano-particle layer in the substrate D A deposition for soldering
Spreading rate be 1.2mm/s, soldered fitting shear strength be 52MPa.
The substrate wettability that can be seen that disclosure offer from the comparison of embodiment and comparative example is good, and contact angle is small, profit
Wet speed is fast, is brazed formed strength of joint and good reliability.It can be seen that from the comparison of embodiment 3 and embodiment 1 for pricker
The V-shaped groove of the substrate surface Formation cross-section profile of weldering, helps to improve surface wettability and strength of joint.From embodiment
The comparison of 4-6 and embodiment 1 can be seen that the thickness of nano-particle layer between 0.3-2 microns, surface wettability and connector
Intensity is more preferable.
The preferred embodiment of the disclosure is described in detail above in association with attached drawing, still, the disclosure is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical solution of the disclosure
Monotropic type, these simple variants belong to the protection domain of the disclosure.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case of shield, can be combined by any suitable means, in order to avoid unnecessary repetition, the disclosure to it is various can
The combination of energy no longer separately illustrates.
In addition, arbitrary combination can also be carried out between a variety of different embodiments of the disclosure, as long as it is without prejudice to originally
Disclosed thought equally should be considered as disclosure disclosure of that.
Claims (21)
1. a kind of substrate for soldering, including substrate body (1), at least part table for being formed in the substrate body (1)
The groove (2) in face and be deposited on the substrate body (1) formation fluted (2) surface region on nano-particle layer
(4)。
2. the substrate according to claim 1 for soldering, wherein the depth capacity of the groove is 5-200 microns, most
Big width is 10-200 microns.
3. the substrate according to claim 1 for soldering, wherein the length of the groove is more than 1 millimeter.
4. the substrate according to claim 1 for soldering, wherein along the length direction perpendicular to groove, the groove
Profile be selected from least one of arc, " Qian " shape, " V " shape and " u "-shaped.
5. the substrate according to claim 1 for soldering, wherein along the length direction of groove, the groove type becomes
It is mutually parallel and/or cross one another a plurality of.
6. the substrate according to claim 5 for soldering, wherein the angle of cross one another groove is 60-90 °, phase
Adjacent two innermost distances of parallel groove are 10-500 microns.
7. the substrate according to claim 1 for soldering, wherein the thickness of the nano-particle layer is 0.1-5 microns,
Porosity is 5-90 body %, and the diameter of nano particle is less than 1000 nanometers in nano-particle layer.
8. the substrate according to claim 1 for soldering, wherein the material of the substrate body and the material of nano particle
Material is each independently metal material, semi-conducting material, ceramic material or ceramic matric composite.
9. a kind of preparation method of substrate for soldering, the preparation method include:
Groove is formed at least part surface of substrate body, the depth capacity and maximum width of the groove are respectively less than
1000 microns;With
There is the surface region of the groove to deposit nano-particle layer in the formation of substrate body, obtains the substrate for soldering.
10. preparation method according to claim 9, wherein the depth capacity of the groove is 5-200 microns, maximum wide
Degree is 10-200 microns.
11. preparation method according to claim 9, wherein the length of the groove is more than 1 millimeter.
12. preparation method according to claim 9, wherein along perpendicular to the direction of groove length, the profile of the groove
To be selected from least one of arc, " Qian " shape, " V " shape and " u "-shaped.
13. preparation method according to claim 9, wherein along the direction of groove length, the groove type becomes mutually flat
It is capable and/or cross one another a plurality of.
14. preparation method according to claim 13, wherein the angle of cross one another groove is 60-90 °, adjacent two
The innermost distance of the parallel groove of item is 10-500 microns.
15. preparation method according to claim 9, wherein the thickness of the nano-particle layer is 0.1-5 microns, hole
Rate is 5-90 body %, and the diameter of nano particle is less than 1000 nanometers in nano-particle layer.
16. preparation method according to claim 9, wherein carved using selected from mechanical processing, laser processing, electrolysis, chemistry
At least one of erosion, photoetching, coining and 3D printing mode forms the groove on the surface of substrate body;Wherein, the base
The surface roughness of plate ontology is less than 5 microns.
17. the preparation method according to claim 9 or 16, this method further include:It is formed on the surface of substrate body described
Cleaning impurity is carried out after groove;Wherein, the impurity includes particulate matter.
18. preparation method according to claim 9, wherein the mode of the deposition nano-particle layer is heavy selected from laser
At least one of product, magnetron sputtering, spin coating method, physical vapour deposition (PVD) and chemical vapor deposition.
19. preparation method according to claim 9, wherein the material of the substrate body and the material of nano particle are each
From independently being metal material, semi-conducting material, ceramic material or ceramic matric composite.
20. a kind of method being brazed for the substrate of soldering using described in any one of claim 1-8, this method
Including:There is the surface region of nano-particle layer to apply solder in the deposition of the substrate for soldering and is brazed.
21. the method for soldering according to claim 20, wherein the condition of the soldering includes:
The temperature of the soldering be 150-450 DEG C, solder be selected from leypewter, red brass, lead bismuth alloy, cazin,
At least one of sn-ag alloy, gun-metal, tin-lead silver alloy, rose metal, tin-lead copper alloy and cu-zn-al alloy;Or
Person
The temperature of the soldering is 650-1150 DEG C, and solder is selected from Kufil, copper silver titanium alloy, copper and indium titanium alloy, gold and silver
At least one of copper alloy and nickel bismuth boron alloy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710086733.5A CN108453330B (en) | 2017-02-17 | 2017-02-17 | Substrate for brazing and preparation method thereof and brazing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710086733.5A CN108453330B (en) | 2017-02-17 | 2017-02-17 | Substrate for brazing and preparation method thereof and brazing method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108453330A true CN108453330A (en) | 2018-08-28 |
CN108453330B CN108453330B (en) | 2020-10-27 |
Family
ID=63221632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710086733.5A Active CN108453330B (en) | 2017-02-17 | 2017-02-17 | Substrate for brazing and preparation method thereof and brazing method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108453330B (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110576231A (en) * | 2019-08-12 | 2019-12-17 | 湖南浩威特科技发展有限公司 | high-silicon aluminum alloy semi-solid brazing method and high-silicon aluminum alloy brazing joint |
CN110773859A (en) * | 2019-11-04 | 2020-02-11 | 深圳市汇城精密科技有限公司 | Method for welding metal materials |
CN112620856A (en) * | 2020-12-17 | 2021-04-09 | 广东省科学院中乌焊接研究所 | Pretreatment method before dissimilar metal material welding, dissimilar metal material welding product and welding method thereof |
CN112620846A (en) * | 2020-11-19 | 2021-04-09 | 西安热工研究院有限公司 | Method for promoting wettability of brazing filler metal in electronic packaging |
CN113369619A (en) * | 2021-06-18 | 2021-09-10 | 华中科技大学 | Dissimilar alloy laser welding and brazing method based on pulse laser pretreatment |
CN114749750A (en) * | 2021-12-31 | 2022-07-15 | 上海工程技术大学 | Forming control method for brazing joint of 3D printed product |
CN118385687A (en) * | 2024-06-21 | 2024-07-26 | 中国机械总院集团宁波智能机床研究院有限公司 | Heterogeneous material brazing maximum speed drop line structure joint and preparation method thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0536431A1 (en) * | 1991-10-07 | 1993-04-14 | Siemens Aktiengesellschaft | Method for working a thin film device by laser |
CN101255538A (en) * | 2007-03-01 | 2008-09-03 | 中国科学院金属研究所 | High-strength low thermal expansion A1N nano wire and A1 composite material |
CN102687599A (en) * | 2010-05-28 | 2012-09-19 | 京瓷株式会社 | Multi-chip wiring board and process for producing same,and wiring board and process for producing same |
JP2013197428A (en) * | 2012-03-22 | 2013-09-30 | Aisin Seiki Co Ltd | Thin-film semiconductor element and method for manufacturing the same |
CN104646833A (en) * | 2014-12-25 | 2015-05-27 | 广东工业大学 | Laser preparation method of gradient wetted surface of metal substrate |
CN105499736A (en) * | 2016-01-13 | 2016-04-20 | 合肥工业大学 | Method for achieving surface metallization and brazing of high volume fraction SiCp and Al composite substrate for electronic packaging |
-
2017
- 2017-02-17 CN CN201710086733.5A patent/CN108453330B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0536431A1 (en) * | 1991-10-07 | 1993-04-14 | Siemens Aktiengesellschaft | Method for working a thin film device by laser |
CN101255538A (en) * | 2007-03-01 | 2008-09-03 | 中国科学院金属研究所 | High-strength low thermal expansion A1N nano wire and A1 composite material |
CN102687599A (en) * | 2010-05-28 | 2012-09-19 | 京瓷株式会社 | Multi-chip wiring board and process for producing same,and wiring board and process for producing same |
JP2013197428A (en) * | 2012-03-22 | 2013-09-30 | Aisin Seiki Co Ltd | Thin-film semiconductor element and method for manufacturing the same |
CN104646833A (en) * | 2014-12-25 | 2015-05-27 | 广东工业大学 | Laser preparation method of gradient wetted surface of metal substrate |
CN105499736A (en) * | 2016-01-13 | 2016-04-20 | 合肥工业大学 | Method for achieving surface metallization and brazing of high volume fraction SiCp and Al composite substrate for electronic packaging |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110576231A (en) * | 2019-08-12 | 2019-12-17 | 湖南浩威特科技发展有限公司 | high-silicon aluminum alloy semi-solid brazing method and high-silicon aluminum alloy brazing joint |
CN110576231B (en) * | 2019-08-12 | 2021-08-31 | 湖南浩威特科技发展有限公司 | High-silicon aluminum alloy semi-solid brazing method and high-silicon aluminum alloy brazing joint |
CN110773859A (en) * | 2019-11-04 | 2020-02-11 | 深圳市汇城精密科技有限公司 | Method for welding metal materials |
CN112620846A (en) * | 2020-11-19 | 2021-04-09 | 西安热工研究院有限公司 | Method for promoting wettability of brazing filler metal in electronic packaging |
CN112620856A (en) * | 2020-12-17 | 2021-04-09 | 广东省科学院中乌焊接研究所 | Pretreatment method before dissimilar metal material welding, dissimilar metal material welding product and welding method thereof |
CN113369619A (en) * | 2021-06-18 | 2021-09-10 | 华中科技大学 | Dissimilar alloy laser welding and brazing method based on pulse laser pretreatment |
CN113369619B (en) * | 2021-06-18 | 2023-03-10 | 华中科技大学 | Dissimilar alloy laser welding and brazing method based on pulse laser pretreatment |
CN114749750A (en) * | 2021-12-31 | 2022-07-15 | 上海工程技术大学 | Forming control method for brazing joint of 3D printed product |
CN114749750B (en) * | 2021-12-31 | 2024-01-30 | 上海工程技术大学 | Forming control method of braze welding joint for 3D printing product |
CN118385687A (en) * | 2024-06-21 | 2024-07-26 | 中国机械总院集团宁波智能机床研究院有限公司 | Heterogeneous material brazing maximum speed drop line structure joint and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN108453330B (en) | 2020-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108453330A (en) | A method of substrate for soldering and preparation method thereof and soldering | |
US20210197521A1 (en) | Kinetically limited nano-scale diffusion bond structures and methods | |
Hu et al. | Femtosecond laser welded nanostructures and plasmonic devices | |
CN103627883B (en) | Method of regulating and controlling light absorption property of metal surface by picosecond pulse laser | |
CN104439956B (en) | Method for connecting materials difficult to connect through ultrafast lasers | |
Liu et al. | Wetting and spreading behaviors of Al-Si alloy on surface textured stainless steel by ultrafast laser | |
JP2003117682A (en) | Brazing method of brazing filler metal and diamond | |
CN103228393B (en) | Conjugant | |
CN105228968A (en) | Surface enhanced Raman scattering (SERS) sensor and manufacture method thereof | |
Xu et al. | Bonding and strengthening mechanism on ultrasonic-assisted soldering of sapphire using Sn-3.5 Ag-4Al solder | |
Long et al. | Dual-scale porous/grooved microstructures prepared by nanosecond laser surface texturing for high-performance vapor chambers | |
Wei et al. | Scaling of spiking and humping in keyhole welding | |
Zhang et al. | Brazing of Al2O3-6061 aluminum alloy based on femtosecond laser surface groove structure | |
CN110202147A (en) | A method of amorphous buffer gradient composites are prepared by Laser Melting Deposition | |
EP1189016A1 (en) | Method for manufacturing mounted AFM probes by soldering | |
Lee et al. | Nanowall formation by maskless wet-etching on a femtosecond laser irradiated silicon surface | |
US5975410A (en) | Process of bonding a metal brush structure to a planar surface of a metal substrate | |
CN115043663A (en) | Method for promoting solder to wet and spread on ceramic surface | |
Tang et al. | Fabrication and microstructures of sequentially electroplated Sn-rich Au-Sn alloy solders | |
Erwin et al. | Solderability of additively manufactured pure copper and the effect of surface modification | |
Yang et al. | Interfacial reaction and wetting behavior between Pt and molten solder | |
TWM449059U (en) | Monocrystal diamond tool | |
Elliott | From the Science of Nanorod Growth to Low Temperature Metallic Attachment | |
Koyama et al. | Behavior of oxide film in transient-liquid-phase bonding of tin with filler of bismuth film | |
JP2008093714A (en) | Brazed body of stainless steel material and aluminum alloy material, and brazing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |