CN108448378A - 3 temperature-compensating 473nm blue light continuous wave lasers - Google Patents
3 temperature-compensating 473nm blue light continuous wave lasers Download PDFInfo
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- CN108448378A CN108448378A CN201810263467.3A CN201810263467A CN108448378A CN 108448378 A CN108448378 A CN 108448378A CN 201810263467 A CN201810263467 A CN 201810263467A CN 108448378 A CN108448378 A CN 108448378A
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- 238000007493 shaping process Methods 0.000 claims abstract description 13
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- 238000005859 coupling reaction Methods 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims description 93
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000006185 dispersion Substances 0.000 claims description 29
- 230000000694 effects Effects 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 10
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- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000000446 fuel Substances 0.000 claims description 3
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- 238000011953 bioanalysis Methods 0.000 abstract description 6
- 241001062009 Indigofera Species 0.000 abstract description 5
- 238000010183 spectrum analysis Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Abstract
A kind of 3 temperature-compensating 473nm blue light continuous wave lasers, by pumping source and pump coupling part, resonant cavity and intracavity frequency doubling part, output beam shaping unit is formed with 3 temperature-compensating temperature control parts four part, can provide necessary blue light monochrome reference light source for the application such as spectrum analysis, bioanalysis, tricolor color matching.The 473nm blue lasers, can continuously export 473nm indigo plant laser, and output power is more than 1W, power stability is better than 1%, and the light light conversion efficiency of pump light to output light is more than 18%, output beam diameter 10mm, the angle of divergence is less than 0.05mrad, and PV is less than λ/3 before output wave.
Description
Technical field
The present invention relates to 473nm blue light continuous wave lasers, especially a kind of 3 temperature-compensating 473nm blue light continuous lasers
Device.It is specifically related to a kind of blue light monochrome reference light source can be used for spectrum analysis, bioanalysis, tricolor color matching etc..
Background technology
473nm blue lights continuously defeated diode pumped solid state laser in necks such as spectrum analysis, bioanalysis, tricolor color matchings
Domain is widely used.With the rapid development of analysis and testing technology and tricolor color matching technology, using the highlighted of 473nm wave bands
Pure color indigo plant laser is spent as the systems reference light source such as spectrum analysis, bioanalysis and tricolor color matching, carries out the skill of related field
Art research has been to be concerned by more and more people.In recent years, stablize height for how to be obtained using semiconductor laser pumping both at home and abroad
The 473nm pure color blue lasers output research of effect becomes one of laser field hot research problem.
It largely needs to use 473nm wave band high brightness in the fields such as various spectrum analyses, bioanalysis, tricolor color matching
Blue laser is as reference light source.Therefore both at home and abroad for the blue laser of 473nm research with development carried out it is close
20 years, various products were formd in the market.But since 473nm wave bands are obtained by 946nm fundamental frequency frequencys multiplication
, and 946nm fundamental frequencies are quasi-three-level structure, fundamental frequency and shg efficiency are all very low, the 473nm laser reported both at home and abroad at present
For light phototranstormation efficiency all 10% or so, it is also only to improve 2~3%, overall both less than 13% occasionally to have laboratory research report.
High-power output is obtained due to low transformation efficiency just only increases pump energy, and the increase of pump energy can bring a system
The problem of row, if pumping source output power increases, driving current increases, and driving is complicated with temperature-controlling system, and fuel factor protrudes, conversion
Efficiency reduces and machine volume increases etc., and the drop of the increase and output stability of cost is also brought more important is the above problem
It is low.And in recent years, when selecting 473nm wave band high brightness blue ray lasers as monochromatic reference light source, output beam quality is also carried
The more specific requirement of higher is gone out.And raising efficiency is concentrated mainly on for the research of 473nm wave band section blue lasers at present
On output stability, the main means using optical resonance system optimization solve.By multi-point temperature compensation, Resonator design and
Three aspect of output optical shaping system design is combined the research to solve the above problems jointly rare relevant report.
Invention content
The object of the present invention is to provide a kind of 3 points of temperature for applications such as spectrum analysis, bioanalysis, tricolor color matchings
Degree compensation 473nm blue light continuous wave lasers, the laser can continuously export 473nm indigo plant laser, and output power is more than 1W, and power is steady
Qualitative to be better than 1%, the light-light conversion efficiency of pump light to output light is more than 18%, and output beam diameter 10mm, the angle of divergence is less than
0.05mrad, PV is less than λ/3 before output wave.
To achieve the above object, technical solution of the invention is as follows：
A kind of 3 temperature-compensating 473nm blue light continuous wave lasers, feature are to include pumping source semiconductor laser,
Laser outbound course along the semiconductor laser is cylinder fast axle compression lenticule successively, aspherical coupling focusing lens, puts down
Recessed Effect of Back-Cavity Mirror, dielectric crystal, frequency-doubling crystal, plane output cavity mirror, bi-concave shaping extender lens and double glued collimation outputs are saturating
Mirror：
The anode of the semiconductor laser is fixed on one end of the first heat dispersion heat sink upper surface, on the first heat dispersion heat sink
The other end on surface is fixed with pumping source negative pole connecting plate by insulating materials, and the cathode of pumping source is linked at by negative wire
In negative pole connecting plate, the lower surface of the first heat dispersion heat sink and the temperature control face paste of the first semiconductor cooler are closed, first semiconductor
The another side of refrigerator is jointly mounted on the heat-dissipating casing bottom plate of laser；Described first heat sink, the first temperature sensor,
First semiconductor cooler, shell bottom plate and third temperature acquisition and control system composition pumping source operating temperature compensate control group
Part acquires and controls the operating temperature of semiconductor laser, its output wavelength is made to be operated in dielectric crystal maximum absorption band；
The dielectric crystal is mounted in the through-hole among the second heat dispersion heat sink, the inner wall and dielectric crystal of heat sink through-hole
Four sides is bonded, and the bottom surface of the second heat dispersion heat sink and the temperature control face paste of the second semiconductor cooler are closed, second semiconductor cooler
Another side be bonded installation with machine shell bottom plate, second temperature sensor is installed inside the second heat dispersion heat sink；Described second
Heat sink, second temperature sensor, the second semiconductor cooler, shell bottom plate) and second temperature acquires and control system composition is situated between
Matter crystal operating temperature compensates control assembly, acquires and control the operating temperature of dielectric crystal, makes its steady operation selected
On temperature spot；
The frequency-doubling crystal is mounted in the intermediate throughholes of third heat dispersion heat sink, and the four of heat sink inner wall and frequency-doubling crystal
Face paste is closed, and the bottom surface of the third heat dispersion heat sink is closed with the temperature control face paste of third semiconductor cooler, third semiconductor refrigerating
The another side of device is bonded installation with machine shell bottom plate, and third temperature sensor is installed inside third heat dispersion heat sink；Described
Three heat sink, third temperature sensor, third semiconductor cooler, shell bottom plate and third temperature acquisition and control system group are at double
The operating temperature of frequency crystal compensates control assembly, acquires and adjusts the operating temperature of frequency-doubling crystal, make its shg efficiency highest, and
Steady operation is on matching temperature spot；
The light-emitting surface of the semiconductor laser and the cylinder fast axle compression lenticule are mutually glued；
The concave curvature of the plano-concave Effect of Back-Cavity Mirror matches with the fuel factor focal length of lens of the dielectric crystal, jointly
The difference of oscillation-damped fundamental frequency light so that vibrate the with a tight waist on the inner surface of the plane output cavity mirror of fundamental frequency light；
Dielectric crystal described in the semiconductor laser output pumping optical pumping is inspired quasi-three-level fundamental frequency
The plane output cavity mirror described in frequency-doubling crystal formation 473nm frequency multiplication high brightness blue laser lights is inserted into 946nm laser transit chamber
Export frequency multiplication light beam, through the bi-concave shaping extender lens and it is double glued collimate output lens formed wavefront reach three/
The output light of one wavelength.
The technique effect of the present invention is as follows：
1, it is inserted into frequency-doubling crystal in fundamental frequency light transit chamber of the present invention and forms 473nm frequency multiplication high brightness blue laser light output cavities
Mirror exports, and output frequency multiplication light beam is identical as intracavitary fundamental frequency light beam characteristics.According to laser cavity parameter, outgoing mirror is penetrated in output light
Matching setting bi-concave shaping extender lens afterwards, output light by passing through double glued collimation output lens again after shaping extender lens
Form the output light that wavefront reaches one third wavelength.
2,3 temperature-compensating temperature control parts compensate control assembly, dielectric crystal operating temperature by pumping source operating temperature point
Point compensation control assembly, frequency-doubling crystal operating temperature point control assembly and temperature acquisition and control system form.Three devices
Operating temperature compensates control on respective temperature spot respectively by temperature acquisition and control system, and laser output light light is made to convert
Efficiency reaches 18% or more, and output power stability is better than 1%.Pumping source compensation temperature control assembly utilizes 808nm wave bands half
Conductor Laser output wavelength, there are the characteristic that 1 DEG C of output wavelength of temperature change changes 0.3nm, is mended with operating temperature by pumping source
It repays temperature-controlling component and controls its operating temperature, its output wavelength is made to be operated in dielectric crystal maximum absorption band.It is mended by dielectric crystal
Temperature-controlling component control dielectric crystal operating temperature is repaid, makes its steady operation on selected temperature spot, dielectric crystal is made to generate
Thermal focal length is stable and is matched with plano-concave Effect of Back-Cavity Mirror concave curvature, eliminates resonant frequency aberraation of light.Frequency-doubling crystal compensates temperature control
Component utilizes the SHG properties of frequency-doubling crystal Temperature Matching, adjusts frequency-doubling crystal operating temperature, makes its shg efficiency highest, and steady
Surely it is operated on matching temperature spot.
3, the present invention can continuously export 473nm indigo plant laser, and output power is more than 1W, and power stability is better than 1%, pump light
Light-light conversion efficiency to output light is more than 18%, and output beam diameter 10mm, the angle of divergence is less than 0.05mrad, before output wave
PV is less than λ/3.
Description of the drawings
Fig. 1 is 3 temperature-compensating 473nm blue light continuous wave laser system diagrams of the invention
Specific implementation mode
It elaborates, but should not be limited the scope of the invention with this to the present invention below in conjunction with attached drawing.
First referring to Fig. 1, Fig. 1 is 3 temperature-compensating 473nm blue light continuous wave laser system diagrams of the invention.It can by figure
See, 3 temperature-compensating 473nm blue light continuous wave lasers of the invention, by pumping source and pump coupling part, resonant cavity and intracavitary
Frequency multiplication part, output beam shaping unit are formed with 3 temperature-compensating temperature control parts four part.
In Fig. 1, pumping source semiconductor laser 03 be 808nm wave band single-tube semiconductor lasers, peak power output 6W,
2 μm of 400 μ m of light-emitting area.Pumping source semiconductor laser anode 032 is fixed on 13 upper surface one end of copper heat dispersion heat sink, pump
Pu source light-emitting surface is towards the direction of laser cavity.The 13 upper surface other end of pumping source copper heat dispersion heat sink is fixed by insulating materials 02
Pumping source negative pole connecting plate 01, pumping source cathode are linked at by negative wire 031 in negative pole connecting plate 01.Under heat dispersion heat sink 13
Surface is closed with 15 temperature control face paste of pumping source compensation temperature control semiconductor cooler, and the another side of semiconductor cooler 15 is jointly mounted to
On laser heat-dissipating casing bottom plate 22.The embedded installation pumping source operating temperature in 13 intermediate position of heat dispersion heat sink tests sensor 14.
Pumping source semiconductor laser 03, heat dispersion heat sink 13, negative pole connecting plate 02, pumping source compensation temperature control semiconductor cooler 15, pump
Pu source operating temperature sensor 14 and machine shell radiating bottom plate 22 collectively constitute pumping source part.Pumping source semiconductor laser
03 towards laser cavity direction light-emitting surface gluing cylinder fast axle compress lenticule 04, pump light is after hypergonar lenticule 04
Aspherical coupling focusing lens 05 are advanced through, along 05 position of coupling focusing lens is adjusted before and after pump light optical axis, make pumping
Light focuses on the position of 07 inner distance rear surface 1mm length of dielectric crystal through Effect of Back-Cavity Mirror 06.Cylinder fast axle compresses lenticule
04 using 400 μm of quartzy cylinder optical fiber of diameter, and 805~810nm wave band anti-reflection films are plated on surface.Aspherical coupling focusing lens 05 to
Pumping source one side is convex spherical, and the one side towards laser cavity is secondary hyperboloid, two-sided to plate 805~810nm wave band anti-reflection films.
Resonant cavity and intracavity frequency doubling part are by plano-concave Effect of Back-Cavity Mirror 06, dielectric crystal 07, frequency-doubling crystal 08 and flat output mirror
09 composition.Each constituent element of resonant cavity puts into plano-concave linear type intracavity frequency doubling structure along optical axis direction successively.It puts successively
Relationship is：After pump light is by coupling focus lamp 05, after being advanced through 06 plane of resonant cavity plano-concave Effect of Back-Cavity Mirror, it is advanced through plano-concave
Effect of Back-Cavity Mirror concave surface forward, through 07 rear surface of dielectric crystal, focuses at rear surface 1mm length, and pump light is sent out after focusing
It dissipates and reaches 07 front surface of dielectric crystal further along, by the reflectance coating reflected back into medium crystal of front surface.Plano-concave Effect of Back-Cavity Mirror 06 is adopted
With fused quartz material, diameter 10mm, center thickness 2mm, the one side towards pumping source 03 is plane, and plating 805~810nm wave bands increase
Permeable membrane, the one side towards dielectric crystal 07 are concave spherical surface, and radius of curvature 70mm, concave surface is also plated 805~810nm wave bands and increased simultaneously
Permeable membrane and 946nm total reflection films.Dielectric crystal 07 uses Nd：YAG materials, size are 3 × 3 × 3mm, mix Nd a concentration of 1%, court
To the one-sided smooth surface of Effect of Back-Cavity Mirror 06, apart from 06 concave surface central point distance 3mm of Effect of Back-Cavity Mirror, and plate 805~810nm wave bands and
946nm wave band anti-reflection films.Dielectric crystal 07 towards frequency-doubling crystal 08 one side also be smooth surface, and plate simultaneously plating 805~
810nm wave bands total reflection film and 946nm anti-reflection films.Remaining four surface of dielectric crystal 07 are hair side not plated film.Dielectric crystal 07
In the square through hole among dielectric crystal copper heat dispersion heat sink 16, clear size of opening and 07 appearance and size phase of dielectric crystal
Together, inner wall is bonded on four sides with dielectric crystal 07.16 bottom surface of copper dielectric crystal heat dispersion heat sink and compensation temperature control semiconductor cooler
18 temperature control face paste is closed, and 18 another side of dielectric crystal compensation temperature control semiconductor cooler is bonded installation with machine shell bottom plate 22.
16 inside install medium crystal of copper heat dispersion heat sink, the 07 operating temperature sensor 17 of 07 downside of dielectric crystal.Frequency-doubling crystal 08 is adopted
BiBO crystal is matched with two classes, 2 × 2 × 10mm of size, the one side towards dielectric crystal is smooth surface, apart from dielectric crystal 07
Front surface 5mm, and 946nm anti-reflection films and 473nm total reflection films are plated simultaneously.The one side of frequency-doubling crystal 08 towards outgoing mirror 09 is also
Smooth surface apart from output cavity mirror 09 apart from for 3mm, and plates 946nm and 473nm anti-reflection films simultaneously.Frequency-doubling crystal 08 other four
A surface is hair side not plated film.In the through-hole of 08 same structure of frequency-doubling crystal being mounted among its copper heat dispersion heat sink 19, lead to
Pore size is identical as 08 appearance and size of frequency-doubling crystal, and inner wall is bonded on four sides with frequency-doubling crystal 08.Copper frequency-doubling crystal heat dispersion heat sink
19 bottom surface is closed with 21 temperature control face paste of compensation temperature control semiconductor cooler, and it is another that frequency-doubling crystal 08 compensates temperature control semiconductor cooler 21
On one side also installation is bonded with machine shell bottom plate 22.19 inside of copper heat dispersion heat sink of 08 downside of frequency-doubling crystal is installed by frequency-doubling crystal
08 operating temperature sensor 20.Outgoing mirror 09 uses fused quartz material, and a diameter of 10mm, two-sided is plane, towards frequency-doubling crystal
08 rear surface plates 946nm total reflection films and 473nm anti-reflection films simultaneously, and 09 another surface of outgoing mirror is plated for laser output face
473nm anti-reflection films.
473nm high brightness blue laser lights outgoing mirror 09 exports, 473nm frequency multiplication output beam characteristics and 946nm fundamental frequency lights
Beam characteristics are consistent, to be exported with the matched beam characteristics of chamber parameter after the place with a tight waist focusing in 09 inner cavity surface of outgoing mirror.Knot
Close plano-concave Effect of Back-Cavity Mirror 06, equivalent thermal lens when dielectric crystal 08 works, 08 thang-kng light path of frequency-doubling crystal and outgoing mirror 09 it is logical
Light path is crossed, output light light beam parameters can be calculated.The two-sided shaping for concave surface is put in the position of 09 front 3mm of outgoing mirror to expand
Lens 10.The use fused quartz material of shaping extender lens 10, double-side curvature radius 2.54mm, diameter 5mm, center thickness 1.3mm,
It is two-sided while plating 473nm anti-reflection films.Collimation output lens group is put apart from its center positions 15.6mm after shaping extender lens 10,
The collimation output lens group is formed by biconvex lens 11 and 12 gluing of concave-convex lens, and biconvex lens 11 is towards shaping extender lens 10
One side plate 473nm anti-reflection films, equally the concave surface of plated film is not glued for plated film and concave-convex lens 12 for another side, concave-convex lens 12
It is laser final output face that 473nm anti-reflection films are plated on convex surface.The 473nm high brightness blue laser beams of 12 convex surface of concave-convex lens output are straight
Diameter 10mm, the angle of divergence are less than 0.05mrad, are one third wavelength before output wave.As 03 output power 5.4W of pumping source,
473nm indigo plant laser output powers are 1.02W.
3 temperature-compensating temperature control parts compensate control assembly, 07 operating temperature of dielectric crystal by 03 operating temperature of pumping source
It compensates control assembly, 08 operating temperature control assembly of frequency-doubling crystal and temperature acquisition and control system forms.Pumping source 03 works
Function of temperature compensation control component heat sink 13, pumping source operating temperature sensor 14, pumping source temperature control semiconductor cooler by pumping source
15, the pumping source temperature control group CON3 compositions of shell bottom plate 22 and control system 23.When laser works, according to pumping source output wave
Personal attendant's operating temperature often changes the characteristic of 1 DEG C of wavelength change 0.3nm, is mended by the 03 temperature control group CON3 of pumping source of control system 23
Control 03 constant operation of pumping source is repaid on making the temperature spot that its output wavelength is 807nm.07 operating temperature of dielectric crystal compensates
Control assembly by dielectric crystal heat sink 16, dielectric crystal operating temperature sensor 17, dielectric crystal temperature control semiconductor cooler 18,
The temperature control group CON2 compositions of dielectric crystal 07 in shell bottom plate 22 and control system 23.Laser works and 03 rear pump of pumping source
When Pu power is 5.4W, pass through the temperature control group CON2 compensation control 07 constant works of dielectric crystal of dielectric crystal 07 in control system 23
Make at 19.3 DEG C, the equivalent thermal lens that dielectric crystal 07 generates is matched with plano-concave Effect of Back-Cavity Mirror 06, realizes that eliminating intracavitary vibrates light image
Difference.08 operating temperature of frequency-doubling crystal compensate control assembly by frequency-doubling crystal heat sink 19, frequency-doubling crystal operating temperature sensor 20, times
The temperature control group CON1 compositions of frequency-doubling crystal 08 in frequency crystal temperature control semiconductor cooler 21, shell bottom plate 22 and control system 23.
When laser works, pass through temperature control group CON1 compensation control 08 constant operations of frequency-doubling crystal of frequency-doubling crystal 08 in control system 23
At 30.5 DEG C, make the shg efficiency highest of frequency-doubling crystal 08.By respectively to pumping source 03, dielectric crystal 07 and frequency-doubling crystal 08
Three device operating temperature compensation controls, realize that laser output power stability is better than 1%, light-light of pumping source to output light
Transformation efficiency is more than 18%.
Claims (1)
1. a kind of 3 temperature-compensating 473nm blue light continuous wave lasers, it is characterised in that including pumping source semiconductor laser
(03), the laser outbound course along the semiconductor laser (03) is cylinder fast axle compression lenticule (04), aspherical coupling successively
Close condenser lens (05), plano-concave Effect of Back-Cavity Mirror (06), dielectric crystal (07), frequency-doubling crystal (08), plane output cavity mirror (09), concave-concave
Face shaping extender lens (10) and double glued collimation output lens (11/12)：
The anode (032) of the semiconductor laser (03) is fixed on one end of the first heat dispersion heat sink (13) upper surface, and first
The other end of heat dispersion heat sink (13) upper surface is fixed with pumping source negative pole connecting plate (01) by insulating materials (02), pumping source
Cathode (033) is linked at by negative wire (031) in negative pole connecting plate (01), the lower surface of the first heat dispersion heat sink (13) and the
The temperature control face paste of semiconductor refrigerator (15) is closed, and the another side of first semiconductor cooler (15) is jointly mounted to laser
Heat-dissipating casing bottom plate (22) on；First heat sink (13), the first temperature sensor (14), the first semiconductor cooler
(15), shell bottom plate (22) and third temperature acquisition and control system (CON3) composition pumping source operating temperature compensate control group
Part acquires and controls the operating temperature of semiconductor laser (03), its output wavelength is made to be operated in dielectric crystal maximum absorption band；
The dielectric crystal (07) is mounted in the intermediate through-hole of the second heat dispersion heat sink (16), the inner wall and medium of heat sink through-hole
Crystal (07) four sides is bonded, and the bottom surface of the second heat dispersion heat sink (16) is closed with the temperature control face paste of the second semiconductor cooler (18), should
The another side of second semiconductor cooler (18) is bonded installation with machine shell bottom plate (22), pacifies inside the second heat dispersion heat sink (16)
Fill second temperature sensor (17)；Second heat sink (16), second temperature sensor (17), the second semiconductor cooler
(18), shell bottom plate (22) and second temperature acquisition compensate control group with control system (CON2) composition dielectric crystal operating temperature
Part acquires and controls the operating temperature of dielectric crystal (07), makes its steady operation on selected temperature spot；
The frequency-doubling crystal (08) is mounted in the intermediate throughholes of third heat dispersion heat sink (19), heat sink inner wall and frequency-doubling crystal
Four sides fitting, the bottom surface of the third heat dispersion heat sink (19) and the temperature control face paste of third semiconductor cooler (21) close, the
The another side of three semiconductor coolers (21) is bonded installation with machine shell bottom plate (22), is installed inside third heat dispersion heat sink (19)
Third temperature sensor (20)；The third is heat sink (19), third temperature sensor (20), third semiconductor cooler
(21), shell bottom plate (22) and third temperature acquisition and the operating temperature of control system (CON1) composition frequency-doubling crystal (08) compensate
Control assembly acquires and adjusts the operating temperature of frequency-doubling crystal (08), makes its shg efficiency highest, and steady operation is in matching temperature
On degree point；
The light-emitting surface of the semiconductor laser (03) and the cylinder fast axle compression lenticule (04) are mutually glued；
The concave curvature of the plano-concave Effect of Back-Cavity Mirror (06) and the fuel factor focal length of lens of the dielectric crystal (07) match,
The difference of common oscillation-damped fundamental frequency light so that vibrate the interior table with a tight waist positioned at the plane output cavity mirror (09) of fundamental frequency light
On face；
Dielectric crystal (07) described in semiconductor laser (03) the output pumping optical pumping is inspired quasi-three-level base
It is defeated that the plane that frequency-doubling crystal (08) is formed described in 473nm frequency multiplication high brightness blue laser lights is inserted into frequency 946nm laser transit chamber
Go out hysteroscope (09) output frequency multiplication light beam, through the bi-concave shaping extender lens (10) and double glued collimation output lens (11/
12) output light that wavefront reaches one third wavelength is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810263467.3A CN108448378A (en) | 2018-03-28 | 2018-03-28 | 3 temperature-compensating 473nm blue light continuous wave lasers |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810263467.3A CN108448378A (en) | 2018-03-28 | 2018-03-28 | 3 temperature-compensating 473nm blue light continuous wave lasers |
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| CN108448378A true CN108448378A (en) | 2018-08-24 |
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| CN101009418A (en) * | 2007-01-26 | 2007-08-01 | 中国科学院上海光学精密机械研究所 | Blue laser system |
| US7991028B1 (en) * | 2010-03-17 | 2011-08-02 | Thomas Bruno | Tunable solid state laser system |
| CN202025979U (en) * | 2011-04-13 | 2011-11-02 | 石家庄经济学院 | LD (laser diode) pump full-solid state green-light laser |
| US20130250979A1 (en) * | 2012-03-20 | 2013-09-26 | Martin H. Muendel | Stabilizing beam pointing of a frequency-converted laser system |
| CN208078376U (en) * | 2018-03-28 | 2018-11-09 | 赵智亮 | 3 temperature-compensating 473nm blue light continuous wave lasers |
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- 2018-03-28 CN CN201810263467.3A patent/CN108448378A/en active Pending
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| JP2000208849A (en) * | 1999-01-12 | 2000-07-28 | Shimadzu Corp | Semiconductor laser exciting solid-state laser device |
| CN101009418A (en) * | 2007-01-26 | 2007-08-01 | 中国科学院上海光学精密机械研究所 | Blue laser system |
| US7991028B1 (en) * | 2010-03-17 | 2011-08-02 | Thomas Bruno | Tunable solid state laser system |
| CN202025979U (en) * | 2011-04-13 | 2011-11-02 | 石家庄经济学院 | LD (laser diode) pump full-solid state green-light laser |
| US20130250979A1 (en) * | 2012-03-20 | 2013-09-26 | Martin H. Muendel | Stabilizing beam pointing of a frequency-converted laser system |
| CN208078376U (en) * | 2018-03-28 | 2018-11-09 | 赵智亮 | 3 temperature-compensating 473nm blue light continuous wave lasers |
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