CN108447925A - Flexible heterojunction solar battery array based on horizontal arrangement nano wire film and preparation method thereof - Google Patents

Flexible heterojunction solar battery array based on horizontal arrangement nano wire film and preparation method thereof Download PDF

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CN108447925A
CN108447925A CN201810429132.4A CN201810429132A CN108447925A CN 108447925 A CN108447925 A CN 108447925A CN 201810429132 A CN201810429132 A CN 201810429132A CN 108447925 A CN108447925 A CN 108447925A
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solar battery
layer
nano wire
gold electrode
flexible
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CN108447925B (en
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张希威
孟丹
胡丹
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Anyang Normal University
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Anyang Normal University
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Abstract

The invention discloses a kind of flexible heterojunction solar battery array and preparation method thereof based on horizontal arrangement nano wire film.It includes one layer of flexible substrate layer, solar battery array, one layer of flexible package layers, solar battery array is arranged between flexible substrate layer and encapsulated layer and includes the solar battery structure unit and copper connecting line of matrix arrangement, and solar battery structure unit includes p-type nano wire film, n-type semiconductor film, Ti electrode and the double-deck gold electrode.Ti electrode and first layer gold electrode are prepared first；Then p-type nano wire film is transferred to appropriate location and prepares second layer gold electrode；Then n-type semiconductor film and deposition copper connecting line are prepared；Subsequently spin coating flexible substrate layer and utilization sacrificial layer etching method completion device transfer；Last spin coating flexible package layer.The present invention has given full play to nano-device in the advantage in flexible solar battery field, and solves the problems, such as that its effective area is small.

Description

Flexible heterojunction solar battery array based on horizontal arrangement nano wire film and its Preparation method
Technical field：
The present invention relates to flexible solar battery fields, more particularly to a kind of based on the soft of horizontal arrangement nano wire film Property heterojunction solar battery and preparation method thereof.
Background technology：
Along with the development of informationized society, the future developing trend of people and information merged as information technology is flexible Electronic device is an important ring therein.The concept source of flexible electronic technology is in organic electronics, but organic semiconducting materials It can not the extensive use in emphasizing high performance contemporary electronic systems due to the characteristic of itself.Erie Ruo Yi universities Rogers and Huang proposes the flexible optoelectronic part based on traditional inorganic semiconductor film, they are by film cut zone and pass through conducting wire Each funtion part is connected, although the method realizes device flexibility, but reduce the effective area of film, therefore reduces Device density.Nano semiconductor material has high mechanical strength, its various performance can be kept under bending state；Individually The structural damage that nano-device can be brought due to its minimum size to avoid the macroscopic deformation of integral device.Therefore, nanometer Semiconductor materials and devices will construct component as the important of high-performance flexible solar cell.But current all kinds of nanometers are soft The property small problem of solar cell generally existing effective area.Therefore, how to be integrated by device and increase effective area as mesh Preceding nanometer flexible solar battery develops the main problem faced.
Invention content：
In view of the deficiencies of the prior art, the present invention proposes a kind of flexible hetero-junctions based on horizontal arrangement nano wire film Solar battery array and preparation method thereof, it is intended to obtain the nanometer flexible solar with high device density and too effective area Battery.
To achieve the goals above, the present invention proposes a kind of flexible hetero-junctions based on horizontal arrangement nano wire film too Positive energy cell array, it is characterised in that：Including one layer of flexible substrate (1), solar battery array, one layer of flexible package layer (8), The solar battery array is set between flexible substrate (1) and flexible package layer (8), and the solar battery array includes The solar battery structure unit and copper connecting line (7) of matrix arrangement, the solar battery structure unit of the matrix arrangement Quantity is more than or equal to each 2 of each row and column.
Preferably, it is characterized in that：The flexible substrate (1) and flexible package layer (8) are PDMS, the flexible substrate (1) thickness is 1000-3000 μm, and flexible package layer (8) thickness is 500-1000 μm.
Preferably, it is characterized in that：The spacing of the solar battery structure unit of the matrix arrangement be 100 μm- 1000 μm, the thickness of the copper connecting line (7) is 50-200nm, and width is 5-20 μm, and the copper connecting line (7) connects comprising copper Line (7-1), copper connecting line (7-2), copper connecting line (7-3) three types.
Preferably, it is characterized in that：The solar battery structure unit is based on horizontal arrangement nano wire film Heterojunction solar battery, including first layer gold electrode (2), the first layer gold electrode (2) are equipped with horizontal arrangement p-type nanometer Line film (3), the side covering first layer gold electrode (2) of the horizontal arrangement p-type nano wire film (3), and set on the side There are second layer gold electrode (4), the other side of the horizontal arrangement p-type nano wire film (3) to have n-type semiconductor film (5), Ti electrode (6) is equipped on described n-type semiconductor film (5) one end.Preferably, it is characterized in that：The matrix row Between the solar battery structure unit of row the solar-electricity is formed according to specific connection type by the copper connecting line (7) Pond array, the specific connection type are that the n-type semiconductor film (5) of the solar battery structure unit on each row top is logical Cross the Ti electrode (6) of the solar battery structure unit of copper connecting line (7-1) connection lower part, the solar cell on each row top The first layer gold electrode (2) of structural unit connects the first of the solar battery structure unit of lower part by copper connecting line (7-2) Layer gold electrode (2), the solar battery structure of top a line left part in the solar battery structure unit of the array arrangement The first layer gold electrode (2) of unit connects the Ti electrode of the solar battery structure unit of right part by copper connecting line (7-3) (6)。
Preferably, the solar battery structure unit, it is characterised in that：The first layer gold electrode (2) and institute It states second layer gold electrode (4) position to be completely superposed, the thickness of the first layer gold electrode (2) is 30-50nm, the second layer gold Electrode (4) thickness is 50-100nm.
Preferably, the solar battery structure unit, it is characterised in that：The horizontal arrangement p-type nano wire is thin Film (3) thickness is 200-1000nm, and the p-type nano wire is p-type CdTe nano wires.
Preferably, the solar battery structure unit, it is characterised in that：The n-type semiconductor film (5) is n Type ZnO film, n-type semiconductor film (5) thickness are 150-500nm, the n-type semiconductor film (5) and described first The spacing of layer gold electrode (2) is 5-20 μm.To achieve the above object, preparation method of the invention includes following sequential steps：
1) it is 30- to prepare Ti electrode array and thickness on the silicon substrate for be covered with silicon dioxide layer using magnetron sputtering method 50nm gold electrode arrays；
2) photoresist is smeared in substrate surface, by uv-exposure and is developed in substrate surface and carves rectangular window array, Unglazed photoresist covering and silicon dioxide layer is exposed inside rectangular window, there is a photoresist covering outside rectangular window, in rectangular window Portion includes gold electrode and does not include Ti electrode；
3) p-type nano wire is transferred in the window area described in step 2), is allowed to form the p-type nano wire of horizontal arrangement Film, and the side of p-type nano wire film is made to cover gold electrode；
4) twice or be repeated several times step 3) so that the p-type nano wire film of formed horizontal arrangement reaches 200- 1000nm；
5) photoresist outside rectangular window is removed；
6) it utilizes and prepares geomery and step in the same position of gold electrode of the magnetron sputtering method described in step 1) 1) gold electrode that the gold electrode described in is identical and thickness is 50-100nm so that the side of p-type nano wire film and two layers of gold medal Electrode forms sandwich structure；
7) the n-type semiconductor film that thickness is 150-500nm is prepared using pulsed laser deposition so that prepared N-shaped The covering part p-type nano wire film and covering part Ti electrode of semiconductive thin film, prepared n-type semiconductor film and its right side Gold electrode spacing be 5-20 μm；
8) it is 50-200nm, the copper connecting line that width is 5-20 μm to prepare thickness using magnetron sputtering method；
9) flexible substrate layer that spin-coating method is 1000-3000 μm in substrate surface spin coating thickness is utilized, is allowed to covering all Solar battery array and copper connecting line；
10) using sacrificial layer etching method by flexible substrate layer and solar battery array from the silicon for being covered with silicon dioxide layer It is stripped down on substrate；
11) it is 500-1000 μm of flexible package layer to utilize spin-coating method spin coating thickness in flexible substrate layer so that all too Positive energy cell array is coated between flexible substrate layer and flexible package layer.
Compared with prior art, the present invention has following beneficial outcomes：
1. in the present invention, being constructed in such a way that horizontal arrangement p-type nano wire film is combined with n-type semiconductor film heterogeneous Joint solar cell avoids the vertical array structure solar battery of nanometer and requires strictly device substrate, it is difficult to realize flexible Change the problem of application；
2. in the present invention, the solar energy that will be made of the hetero-junctions based on horizontal arrangement nano wire film using copper connecting line Battery structure unit is arranged in a matrix mode and forms solar battery array, and the current nano solar battery of effective solution has Imitate the small problem of area.
Description of the drawings：
Figure 1A is the cross-sectional view of the present invention, and Figure 1B is the schematic top plan view of the present invention
Fig. 2 is the fabrication processing figure (cross-sectional view) of the present invention
Fig. 3 is the fabrication processing figure (schematic top plan view) of the present invention.
Specific implementation mode：
A and Figure 1B referring to Fig.1, the present invention include one layer of flexible substrate (1), solar battery array, one layer of flexible package Layer (8), the solar battery array are set between flexible substrate (1) and flexible package layer (8), the solar array Row include the solar battery structure unit and copper connecting line (7) of matrix arrangement, the solar battery structure of the matrix arrangement The quantity of unit is more than or equal to each 2 of each row and column.
The flexible substrate (1) is PDMS, and thickness is 1000-3000 μm；The flexible package layer (8) is PDMS, thickness It is 500-1000 μm；The spacing of the solar battery structure unit of the matrix arrangement is 100 μm -1000 μm；The copper connection The thickness of line (7) is 50-200nm, and width is 5-20 μm；The copper connecting line (7) includes copper connecting line (7-1), copper connecting line (7-2), copper connecting line (7-3) three types.The solar battery structure unit is based on horizontal arrangement nano wire film Heterojunction solar battery, including first layer gold electrode (2), the first layer gold electrode (2) are equipped with horizontal arrangement p-type nanometer Line film (3), the side covering first layer gold electrode (2) of the horizontal arrangement p-type nano wire film (3), and set on the side There are second layer gold electrode (4), the other side of the horizontal arrangement p-type nano wire film (3) to have n-type semiconductor film (5), Ti electrode (6) is equipped on described n-type semiconductor film (5) one end.
By the copper connecting line (7) according to specific connection side between the solar battery structure unit of the matrix arrangement Formula forms the solar battery array, and the specific connection type is the solar battery structure unit on each row top N-type semiconductor film (5) connects the Ti electrode (6) of the solar battery structure unit of lower part by copper connecting line (7-1), each The first layer gold electrode (2) for arranging the solar battery structure unit on top connects the solar energy of lower part by copper connecting line (7-2) The first layer gold electrode (2) of battery structure unit, top a line is left in the solar battery structure unit of the array arrangement The first layer gold electrode (2) of the solar battery structure unit in portion connects the solar cell of right part by copper connecting line (7-3) The Ti electrode (6) of structural unit.
The first layer gold electrode (2) and the second layer gold electrode (4) position are completely superposed, the first layer gold electrode (2) thickness is 30-50nm, and second layer gold electrode (4) thickness is 50-100nm；The horizontal arrangement p-type nano wire is thin Film (3) thickness is 200-1000nm, and the p-type nano wire is p-type CdTe nano wires；The n-type semiconductor film (5) is N-shaped ZnO film, the n-type semiconductor film
(5) thickness is 150-500nm, and the spacing of the n-type semiconductor film (5) and the first layer gold electrode (2) is 5-20μm。
Referring to figs. 2 and 3, it is given below and makes the flexible heterojunction solar battery based on horizontal arrangement nano wire film Three embodiments：
Embodiment 1：
Often row 3, each column 2, the thickness of flexible substrate are the number of bits of the solar battery structure unit of matrix arrangement 1000 μm, the thickness of flexible package layer is 500 μm, and the spacing of the solar battery structure unit of matrix arrangement is 300 μm, described The thickness of copper connecting line is 100nm, and width is 10 μm, and the thickness of first layer gold electrode is in solar battery structure unit The thickness of 30nm, second layer gold electrode are 50nm, and the thickness of horizontal arrangement p-type nano wire film is 400nm, and n-type semiconductor is thin The thickness of film is 200nm, and the spacing of n-type semiconductor film and first layer gold electrode is 10 μm.Making step is as follows：
1) it is the titanium electricity that 2 columns are 3 to prepare line number on the silicon substrate for be covered with silicon dioxide layer using magnetron sputtering method Pole array and thickness are 30nm gold electrode arrays, such as Fig. 2-A and Fig. 3-A；
2) photoresist is smeared in substrate surface, by uv-exposure and is developed in substrate surface and carves rectangular window array, Unglazed photoresist covering and silicon dioxide layer is exposed inside rectangular window, there is a photoresist covering outside rectangular window, in rectangular window Portion includes gold electrode and does not include Ti electrode, such as Fig. 2-B and Fig. 3-B；
3) p-type nano wire is transferred in the window area described in step 2), is allowed to form the p-type nano wire of horizontal arrangement Film, and the side of p-type nano wire film is made to cover gold electrode, such as Fig. 2-C and Fig. 3-C；
4) twice repeat step 3) so that the p-type nano wire film of formed horizontal arrangement reaches 400nm, as Fig. 2-C with Fig. 3-C；
5) photoresist outside rectangular window is removed, such as Fig. 2-D and Fig. 3-D；
6) it utilizes and prepares geomery and step in the same position of gold electrode of the magnetron sputtering method described in step 1) 1) gold electrode that the gold electrode described in is identical and thickness is 50nm so that the side of p-type nano wire film and two layers of gold electrode Sandwich structure is formed, such as Fig. 2-E and Fig. 3-E；
7) the n-type semiconductor film that thickness is 200nm is prepared using pulsed laser deposition so that prepared N-shaped is partly led The covering part p-type nano wire film and covering part Ti electrode of body thin film, prepared n-type semiconductor film and the gold on the right side of it Electrode spacing is 10 μm, such as Fig. 2-F and Fig. 3-F；
8) it is 100nm, the copper connecting line that width is 10 μm, such as Fig. 2-G and Fig. 3-G to prepare thickness using magnetron sputtering method；
9) flexible substrate layer that spin-coating method is 1000 μm in substrate surface spin coating thickness is utilized, is allowed to cover whole solar energy Cell array and copper connecting line, such as Fig. 2-H and Fig. 3-H；
10) using sacrificial layer etching method by flexible substrate layer and solar battery array from the silicon for being covered with silicon dioxide layer It is stripped down on substrate, such as Fig. 2-I and Fig. 3-I；
11) it is 500 μm of flexible package layers to utilize spin-coating method spin coating thickness in flexible substrate layer so that whole solar-electricities Pond array is coated between flexible substrate layer and flexible package layer, such as Fig. 2-J and Fig. 3-J.
Embodiment 2：
Often row 5, each column 5, the thickness of flexible substrate are the number of bits of the solar battery structure unit of matrix arrangement 2000 μm, the thickness of flexible package layer is 800 μm, and the spacing of the solar battery structure unit of matrix arrangement is 500 μm, described The thickness of copper connecting line is 75nm, and width is 15 μm, and the thickness of first layer gold electrode is 40nm in solar battery structure unit, The thickness of second layer gold electrode is 70nm, and the thickness of horizontal arrangement p-type nano wire film is 600nm, the thickness of n-type semiconductor film It is 300nm to spend, and the spacing of n-type semiconductor film and first layer gold electrode is 15 μm.Making step is as follows：
1) it is the titanium electricity that 5 columns are 5 to prepare line number on the silicon substrate for be covered with silicon dioxide layer using magnetron sputtering method Pole array and thickness are 40nm gold electrode arrays, such as Fig. 2-A and Fig. 3-A；
2) photoresist is smeared in substrate surface, by uv-exposure and is developed in substrate surface and carves rectangular window array, Unglazed photoresist covering and silicon dioxide layer is exposed inside rectangular window, there is a photoresist covering outside rectangular window, in rectangular window Portion includes gold electrode and does not include Ti electrode, such as Fig. 2-B and Fig. 3-B；
3) p-type nano wire is transferred in the window area described in step 2), is allowed to form the p-type nano wire of horizontal arrangement Film, and the side of p-type nano wire film is made to cover gold electrode, such as Fig. 2-C and Fig. 3-C；
4) three times repeat step 3) so that the p-type nano wire film of formed horizontal arrangement reaches 600nm, as Fig. 2-C with Fig. 3-C；
5) photoresist outside rectangular window is removed, such as Fig. 2-D and Fig. 3-D；
6) it utilizes and prepares geomery and step in the same position of gold electrode of the magnetron sputtering method described in step 1) 1) gold electrode that the gold electrode described in is identical and thickness is 70nm so that the side of p-type nano wire film and two layers of gold electrode Sandwich structure is formed, such as Fig. 2-E and Fig. 3-E；
7) the n-type semiconductor film that thickness is 300nm is prepared using pulsed laser deposition so that prepared N-shaped is partly led The covering part p-type nano wire film and covering part Ti electrode of body thin film, prepared n-type semiconductor film and the gold on the right side of it Electrode spacing is 15 μm, such as Fig. 2-F and Fig. 3-F；
8) it is 75nm, the copper connecting line that width is 15 μm, such as Fig. 2-G and Fig. 3-G to prepare thickness using magnetron sputtering method；
9) flexible substrate layer that spin-coating method is 2000 μm in substrate surface spin coating thickness is utilized, is allowed to cover whole solar energy Cell array and copper connecting line, such as Fig. 2-H and Fig. 3-H；
10) using sacrificial layer etching method by flexible substrate layer and solar battery array from the silicon for being covered with silicon dioxide layer It is stripped down on substrate, such as Fig. 2-I and Fig. 3-I；
11) it is 800 μm of flexible package layers to utilize spin-coating method spin coating thickness in flexible substrate layer so that whole solar-electricities Pond array is coated between flexible substrate layer and flexible package layer, such as Fig. 2-J and Fig. 3-J.
Embodiment 3：
Every row 10 of the number of bits of the solar battery structure unit of matrix arrangement, each column 10, the thickness of flexible substrate It is 3000 μm, the thickness of flexible package layer is 1000 μm, and the spacing of the solar battery structure unit of matrix arrangement is 700 μm, The thickness of the copper connecting line is 150nm, and width is 20 μm, and the thickness of first layer gold electrode is in solar battery structure unit The thickness of 50nm, second layer gold electrode are 100nm, and the thickness of horizontal arrangement p-type nano wire film is 800nm, and n-type semiconductor is thin The thickness of film is 500nm, and the spacing of n-type semiconductor film and first layer gold electrode is 20 μm.Making step is as follows：
1) it is the titanium that 10 columns are 10 to prepare line number on the silicon substrate for be covered with silicon dioxide layer using magnetron sputtering method Electrod-array and thickness are 50nm gold electrode arrays, such as Fig. 2-A and Fig. 3-A；
2) photoresist is smeared in substrate surface, by uv-exposure and is developed in substrate surface and carves rectangular window array, Unglazed photoresist covering and silicon dioxide layer is exposed inside rectangular window, there is a photoresist covering outside rectangular window, in rectangular window Portion includes gold electrode and does not include Ti electrode, such as Fig. 2-B and Fig. 3-B；
3) p-type nano wire is transferred in the window area described in step 2), is allowed to form the p-type nano wire of horizontal arrangement Film, and the side of p-type nano wire film is made to cover gold electrode, such as Fig. 2-C and Fig. 3-C；
4) four repetition steps 3) so that the p-type nano wire film of formed horizontal arrangement reaches 800nm, such as Fig. 2-C and Fig. 3-C；
5) photoresist outside rectangular window is removed, such as Fig. 2-D and Fig. 3-D；
6) it utilizes and prepares geomery and step in the same position of gold electrode of the magnetron sputtering method described in step 1) 1) gold electrode that the gold electrode described in is identical and thickness is 100nm so that the side of p-type nano wire film and two layers of gold electrode Sandwich structure is formed, such as Fig. 2-E and Fig. 3-E；
7) the n-type semiconductor film that thickness is 500nm is prepared using pulsed laser deposition so that prepared N-shaped is partly led The covering part p-type nano wire film and covering part Ti electrode of body thin film, prepared n-type semiconductor film and the gold on the right side of it Electrode spacing is 20 μm, such as Fig. 2-F and Fig. 3-F；
8) it is 150nm, the copper connecting line that width is 20 μm, such as Fig. 2-G and Fig. 3-G to prepare thickness using magnetron sputtering method；
9) flexible substrate layer that spin-coating method is 3000 μm in substrate surface spin coating thickness is utilized, is allowed to cover whole solar energy Cell array and copper connecting line, such as Fig. 2-H and Fig. 3-H；
10) using sacrificial layer etching method by flexible substrate layer and solar battery array from the silicon for being covered with silicon dioxide layer It is stripped down on substrate, such as Fig. 2-I and Fig. 3-I；
11) it is 1000 μm of flexible package layers to utilize spin-coating method spin coating thickness in flexible substrate layer so that whole solar energy Cell array is coated between flexible substrate layer and flexible package layer, such as Fig. 2-J and Fig. 3-J.

Claims (9)

1. a kind of flexible heterojunction solar battery array based on horizontal arrangement nano wire film, it is characterised in that：Including one Layer flexible substrate (1), solar battery array, one layer of flexible package layer (8), the solar battery array are set to flexible liner Between bottom (1) and flexible package layer (8), the solar battery array include matrix arrangement solar battery structure unit and The quantity of copper connecting line (7), the solar battery structure unit of the matrix arrangement is more than or equal to each 2 of each row and column.
2. a kind of flexible heterojunction solar battery battle array based on horizontal arrangement nano wire film according to claim 1, Row, it is characterised in that：The flexible substrate (1) and flexible package layer (8) are PDMS, and flexible substrate (1) thickness is 1000- 3000 μm, flexible package layer (8) thickness is 500-1000 μm.
3. a kind of flexible heterojunction solar battery battle array based on horizontal arrangement nano wire film according to claim 1, Row, it is characterised in that：The spacing of the solar battery structure unit of the matrix arrangement is 100 μm -1000 μm, the copper connection The thickness of line (7) is 50-200nm, and width is 5-20 μm, and the copper connecting line (7) includes copper connecting line (7-1), copper connecting line (7-2), copper connecting line (7-3) three types.
4. a kind of flexible heterojunction solar battery battle array based on horizontal arrangement nano wire film according to claim 1, Row, it is characterised in that：The solar battery structure unit is the heterojunction solar electricity based on horizontal arrangement nano wire film Pond, including first layer gold electrode (2), the first layer gold electrode (2) is equipped with horizontal arrangement p-type nano wire film (3), described The side covering first layer gold electrode (2) of horizontal arrangement p-type nano wire film (3), and second layer gold electrode is equipped on the side (4), the other side of the horizontal arrangement p-type nano wire film (3) has n-type semiconductor film (5), and the N-shaped is partly led Ti electrode (6) is equipped on body thin film (5) one end.
5. a kind of flexible heterojunction solar battery battle array based on horizontal arrangement nano wire film according to claim 1, Row, it is characterised in that：By the copper connecting line (7) according to specific between the solar battery structure unit of the matrix arrangement Connection type forms the solar battery array, and the specific connection type is the solar battery structure on each row top The n-type semiconductor film (5) of unit connects the Ti electrode of the solar battery structure unit of lower part by copper connecting line (7-1) (6), the first layer gold electrode (2) of the solar battery structure unit on each row top connects lower part by copper connecting line (7-2) Solar battery structure unit first layer gold electrode (2), most push up in the solar battery structure unit of the array arrangement The first layer gold electrode (2) of the solar battery structure unit of a line left part is held to connect right part too by copper connecting line (7-3) The Ti electrode (6) of positive energy battery structure unit.
6. solar battery structure unit according to claim 4, it is characterised in that：The first layer gold electrode (2) It being completely superposed with second layer gold electrode (4) position, the thickness of the first layer gold electrode (2) is 30-50nm, described second Layer gold electrode (4) thickness is 50-100nm.
7. solar battery structure unit according to claim 4, it is characterised in that：The horizontal arrangement p-type nanometer Line film (3) thickness is 200-1000nm, and the p-type nano wire is p-type CdTe nano wires.
8. solar battery structure unit according to claim 4, it is characterised in that：The n-type semiconductor film (5) For N-shaped ZnO film, n-type semiconductor film (5) thickness is 150-500nm, the n-type semiconductor film (5) and described the The spacing of one layer of gold electrode (2) is 5-20 μm.
9. a kind of preparation method of the flexible heterojunction solar battery array based on horizontal arrangement nano wire film, including it is as follows Sequential steps：
1) it is 30-50nm to prepare Ti electrode array and thickness on the silicon substrate for be covered with silicon dioxide layer using magnetron sputtering method Gold electrode array；
2) photoresist is smeared in substrate surface, by uv-exposure and is developed in substrate surface and carves rectangular window array, rectangle Photoresist that window interior is unglazed covers and silicon dioxide layer is exposed, has photoresist covering outside rectangular window, is wrapped inside rectangular window Containing gold electrode and Ti electrode is not included；
3) p-type nano wire is transferred in the window area described in step 2), the p-type nano wire for being allowed to be formed horizontal arrangement is thin Film, and the side of p-type nano wire film is made to cover gold electrode；
4) twice or be repeated several times step 3) so that the p-type nano wire film of formed horizontal arrangement reaches 200-1000nm；
5) photoresist outside rectangular window is removed；
6) it utilizes and is prepared in geomery and step 1) in the same position of gold electrode of the magnetron sputtering method described in step 1) The gold electrode that the gold electrode is identical and thickness is 50-100nm so that the side of p-type nano wire film and two layers of gold electrode Form sandwich structure；
7) the n-type semiconductor film that thickness is 150-500nm is prepared using pulsed laser deposition so that prepared N-shaped is partly led The covering part p-type nano wire film and covering part Ti electrode of body thin film, prepared n-type semiconductor film and the gold on the right side of it Electrode spacing is 5-20 μm；
8) it is 50-200nm, the copper connecting line that width is 5-20 μm to prepare thickness using magnetron sputtering method；
9) flexible substrate layer that spin-coating method is 1000-3000 μm in substrate surface spin coating thickness is utilized, is allowed to cover whole sun It can cell array and copper connecting line；
10) using sacrificial layer etching method by flexible substrate layer and solar battery array from the silicon substrate for being covered with silicon dioxide layer On strip down；
11) it is 500-1000 μm of flexible package layer to utilize spin-coating method spin coating thickness in flexible substrate layer so that whole solar energy Cell array is coated between flexible substrate layer and flexible package layer.
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