CN108447852A - A kind of millimeter wave chip-packaging structure and printed circuit board - Google Patents
A kind of millimeter wave chip-packaging structure and printed circuit board Download PDFInfo
- Publication number
- CN108447852A CN108447852A CN201810353444.1A CN201810353444A CN108447852A CN 108447852 A CN108447852 A CN 108447852A CN 201810353444 A CN201810353444 A CN 201810353444A CN 108447852 A CN108447852 A CN 108447852A
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- China
- Prior art keywords
- millimeter wave
- impedance
- wave chip
- impedance matching
- printed circuit
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 27
- 238000005538 encapsulation Methods 0.000 claims abstract description 4
- 230000007246 mechanism Effects 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 9
- 238000013461 design Methods 0.000 description 10
- 230000008054 signal transmission Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000013011 mating Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
Abstract
The embodiment of the invention discloses a kind of millimeter wave chip-packaging structure and printed circuit boards.The millimeter wave chip-packaging structure includes：Millimeter wave chip, and cover the encapsulated layer of the millimeter wave chip；The encapsulation layer surface is provided with external pin；Impedance matching structure is additionally provided in the encapsulated layer, the first end of the impedance matching structure is electrically connected with the output end of the millimeter wave chip, and second end is electrically connected with the external pin.An embodiment of the present invention provides a kind of impedance matching schemes that difficulty of processing simple in structure is low.
Description
Technical field
The present embodiments relate to impedance match technique more particularly to a kind of millimeter wave chip-packaging structures and printed circuit
Plate.
Background technology
In traditional chip design and application, when chip application band is relatively low, due to path caused by chip package
It is shorter compared to wavelength, for example, a chip for being used for 2.4GHz frequency ranges, size only tens of milliseconds, however the wave of 2.4GHz
Wavelength be about 125 millimeters, therefore chip and extraneous signal connecting line are very short for wavelength, then posting accordingly
Raw capacitance and inductance can almost be ignored.Impedance matching structure also seems in these frequency ranges without so important, it is only necessary to protect
Satisfactory performance can be reached by holding chip and being preferably electrically connected with circuit board.However in millimeter wave frequency band, such as
60GHz, millimetre wavelength only have 5 millimeters or so, and are generally used for the encapsulation of connection chip and printed circuit board, and welding makes
Tin ball, size is all in millimeter rank.The influence that any one short connecting line transmits chip signal in this case
It all can not ignore, therefore matching network seems extremely important.
In the prior art in order to improve the efficiency of transmission of energy, the impedance of chip generally can be all set on a printed circuit
Mating structure so as to obtain best energy transmission efficiency, however can make the design of entire printed circuit board more
Complexity, and the designed impedance matching structure difficulty of processing of accurate processing is larger on a printed circuit.
Invention content
An embodiment of the present invention provides a kind of millimeter wave chip-packaging structure and printed circuit boards, to provide a kind of structure letter
The low impedance matching scheme of single difficulty of processing.
In a first aspect, an embodiment of the present invention provides a kind of millimeter wave chip-packaging structure, the millimeter wave chip package knot
Structure includes：
Millimeter wave chip, and cover the encapsulated layer of the millimeter wave chip；
The encapsulation layer surface is provided with external pin；
Impedance matching structure, the first end of the impedance matching structure and the millimeter wave are additionally provided in the encapsulated layer
The output end of chip is electrically connected, and second end is electrically connected with the external pin.
Further, the impedance matching structure uses coplanar waveguide structure.
Further, the impedance matching structure uses impedance transition mechanism formula coplanar waveguide structure.
Further, the impedance matching structure uses the coplanar waveguide structure with open circuit or short-circuit minor matters.
Further, the impedance matching structure uses multistage difference impedance type coplanar waveguide structure.
Further, the external pin is solder ball.
Further, the first port impedance at the first end of the impedance matching structure is the defeated of the millimeter wave chip
The conjugate impedance of second port impedance at outlet.
Second aspect, the embodiment of the present invention additionally provide a kind of printed circuit board, which includes that the present invention appoints
Millimeter wave chip-packaging structure described in embodiment of anticipating；
Wherein, the millimeter wave chip-packaging structure passes through the signal transmssion line in external pin and the printed circuit board
Electrical connection.
Further, the impedance of the signal transmssion line is 50 ohm.
The embodiment of the present invention is by the way that impedance matching structure to be set in encapsulated layer, without setting resistance on a printed circuit
Anti- mating structure, reduces the design difficulty and difficulty of processing of printed circuit board, and impedance matching is arranged in encapsulating structure
Structure so that the homogeneity of product and stability of millimeter wave encapsulating structure are greatly improved.In addition, milli in the prior art
It is usually provided with wiring layer in the encapsulated layer of metric wave chip-packaging structure, the output for connecting external pin and millimeter wave chip
End, level where impedance matching structure can be set to original wiring layer reduce processing without increasing new technological process
Cost.
Description of the drawings
Fig. 1 is a kind of schematic diagram of millimeter wave chip-packaging structure provided in an embodiment of the present invention；
Fig. 2 is the schematic top plan view of millimeter wave chip-packaging structure in Fig. 1；
Fig. 3 is the schematic top plan view of another millimeter wave chip-packaging structure provided in an embodiment of the present invention；
Fig. 4 is the schematic top plan view of another millimeter wave chip-packaging structure provided in an embodiment of the present invention；
Fig. 5 is the schematic top plan view of another millimeter wave chip-packaging structure provided in an embodiment of the present invention；
Fig. 6 is a kind of schematic diagram of printed circuit board provided in an embodiment of the present invention；
Fig. 7 is impedance matching test result provided in an embodiment of the present invention.
Specific implementation mode
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limitation of the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
A kind of millimeter wave chip-packaging structure is present embodiments provided, Fig. 1 is a kind of millimeter provided in an embodiment of the present invention
The schematic diagram of wave chip-packaging structure, Fig. 2 are the schematic top plan views of millimeter wave chip-packaging structure in Fig. 1, with reference to figure 1 and Fig. 2,
The millimeter wave chip-packaging structure includes：
Millimeter wave chip 110, and cover the encapsulated layer 120 of millimeter wave chip 110；
120 surface of encapsulated layer is provided with external pin 121；
Impedance matching structure 130, first end and the millimeter wave core of impedance matching structure 130 are additionally provided in encapsulated layer 120
The output end 111 of piece 110 is electrically connected, and second end is electrically connected with external pin 121.
Wherein, millimeter wave chip 110 refers to millimeter wave chip dies, and external pin 121 is mainly used for millimeter wave chip package
Structure setting is connect when printed circuit board, by millimeter wave chip 110 with the signal transmssion line on printed circuit board.Optionally,
External pin 121 can be solder ball, or the pin of plug-in.Impedance matching structure 130 is mainly used for adjusting external
Port Impedance at pin 121 makes the port Impedance of itself and the output end 111 of millimeter wave chip 110 match to meet signal
Transmission demand reduces the energy loss in signals transmission.
The present embodiment is by the way that impedance matching structure to be set in encapsulated layer, it is not necessary that impedance is arranged on a printed circuit
Distribution structure, reduces the design difficulty and difficulty of processing of printed circuit board, and impedance matching structure is arranged in encapsulating structure,
So that the homogeneity of product and stability of millimeter wave encapsulating structure are greatly improved.In addition, millimeter wave in the prior art
It is usually provided with wiring layer in the encapsulated layer of chip-packaging structure, the output end for connecting external pin and millimeter wave chip,
Level where impedance matching structure can be set to original wiring layer is reduced and is processed into without increasing new technological process
This.
Optionally, with reference to figure 2, impedance matching structure 130 uses coplanar waveguide structure.
Specifically, the structure of coplanar waveguide structure is simple, be easy to make, reduce impedance matching structure cost of manufacture and
Difficulty of processing.
Optionally, with reference to figure 2, impedance matching structure 130 uses impedance transition mechanism formula coplanar waveguide structure.
Specifically, impedance transition mechanism coplanar waveguide structure includes ground wire 132 and signal wire 131, setting signal line can be passed through
131 specific width W1 and W2, and specific length L1 and L2, to change the matching resistance of impedance transition mechanism formula coplanar waveguide structure
It is anti-, to realize optimal matching effect, improve the energy transmission efficiency of signal.
It should be noted that merely exemplary in Fig. 2 show the external pin being connect with signal wire, do not show that and ground
The external pin of line connection, and merely exemplary three output ends for showing millimeter wave chip, not to the limit of the present invention
It is fixed.
Fig. 3 is the schematic top plan view of another millimeter wave chip-packaging structure provided in an embodiment of the present invention, and Fig. 4 is this hair
The schematic top plan view for another millimeter wave chip-packaging structure that bright embodiment provides.Optionally, with reference to figure 3 and Fig. 4, impedance
Distribution structure 130 is using the coplanar waveguide structure with open circuit or short-circuit minor matters.
Specifically, Fig. 3 shows that the coplanar waveguide structure with open circuit minor matters, the coplanar waveguide structure include ground wire 132, letter
Number line 131 and open circuit minor matters line 133.Fig. 4 shows that the coplanar waveguide structure with short-circuit minor matters, the coplanar waveguide structure include ground
Line 132, signal wire 131 and short-circuit minor matters line 134, wherein short-circuit minor matters line 134 is electrically connected with ground wire 132.Open circuit minor matters line
133 matching impedance with short-circuit minor matters line 134 for adjusting impedance matching structure can need to be arranged according to matching.With reference to figure 3,
Can by adjusting open circuit minor matters 133 length L3 and open circuit minor matters 133 and signal wire 131 and millimeter wave chip 110 it is defeated
Outlet 111 connect one end distance L4 come adjust band open a way minor matters coplanar waveguide structure matching impedance.It, can with reference to figure 4
With the output of length L5 and short-circuit minor matters 134 and signal wire 131 and millimeter wave chip 110 by adjusting short-circuit minor matters 134
The distance L6 of one end of 111 connections is held to adjust the matching impedance of the coplanar waveguide structure with open circuit minor matters.
It should be noted that only respectively illustrate an open circuit minor matters and a short-circuit minor matters in Fig. 3 and Fig. 4, not pair
The restriction of the present invention can be arranged as required to multiple open circuit minor matters or multiple short-circuit minor matters in a particular application.
Fig. 5 is the schematic top plan view of another millimeter wave chip-packaging structure provided in an embodiment of the present invention, optionally, ginseng
Fig. 5 is examined, impedance matching structure 130 uses multistage difference impedance type coplanar waveguide structure.
Specifically, multistage difference impedance type coplanar waveguide structure includes signal wire 131 and ground wire 132, wherein signal wire 131
Subsignal line including multistage different in width and length, signal wire 131 includes two sections different wide for merely exemplary showing in Fig. 5
The subsignal line of degree and length, can be more to adjust by adjusting the width W3 and W4 and length L7 and L8 of each subsignal line
The matching impedance of Duan Butong impedance type coplanar waveguide structures.
Optionally, the first port impedance Z 1 at the first end of impedance matching structure 130 is the output of millimeter wave chip 110
Hold the conjugate impedance of the second port impedance Z 2 at 111.
Specifically, when impedance matching structure 130 is arranged, determined first according to used encapsulated layer 120 relevant
Parameter, such as the important design objective such as the thickness of encapsulated layer 120 and the dielectric constant of material of the use of encapsulated layer 120, so
The signal transmssion line on printed circuit board is obtained by emulation or actual test afterwards and passes through the parasitism electricity after external pin 121
Hold inductance or scattering parameter (S parameter).In conjunction with the scattering parameter, impedance matching is designed by calculating or assisting software
Structure 130.If port Impedance of the signal transmssion line on printed circuit board after external pin 121 is denoted as Z3, impedance
The optimization aim of distribution structure 130 is exactly so that impedances of the Z3 after by impedance matching structure 130, i.e. impedance matching structure
First port impedance Z 1 at 130 first end reaches a required design value so that first port impedance Z 1 and second
Port Impedance Z2 matches, so that printed circuit board carries out signal interaction by signal transmssion line and millimeter wave chip 110
When, obtain best signal transmission performance at the output end 111 of millimeter wave chip 110.By the way that first port impedance Z 1 is arranged
For the conjugate impedance of second port impedance Z 2 so that conjugate impedance match is realized at the output end 111 of millimeter wave chip 110, to
Obtain maximum signal transmission power.
It should be noted that the merely exemplary setting first port impedance Z 1 and second port impedance Z 2 of the present embodiment is total
Yoke impedance, not limitation of the invention first port impedance Z 1 can also be adjusted as needed in other embodiments
To other impedances to obtain more preferably performance.
The present embodiment additionally provides a kind of printed circuit board, and Fig. 6 is a kind of printed circuit board provided in an embodiment of the present invention
Schematic diagram, with reference to figure 6, which includes the millimeter wave chip-packaging structure described in any embodiment of the present invention；
Wherein, the millimeter wave chip-packaging structure is passed by the signal in external pin 121 and the printed circuit board
Defeated line 210 is electrically connected.
The present embodiment is by the way that impedance matching structure to be set in encapsulated layer, it is not necessary that impedance is arranged on a printed circuit
Distribution structure, reduces the design difficulty and difficulty of processing of printed circuit board, and impedance matching structure is arranged in encapsulating structure,
So that the homogeneity of product and stability of millimeter wave encapsulating structure are greatly improved.
Optionally, the impedance of signal transmssion line 210 is 50 ohm.In this way, reducing the design of impedance matching structure
Difficulty.
It should be noted that the impedance of the merely exemplary setting signal transmission line of the present embodiment is 50 ohm, not to this
The restriction of invention, in other embodiments can according to the impedance of the specific requirements setting signal transmission line of printed circuit board,
Such as it could be provided as the numerical value such as 60 ohm, 75 ohm or 100 ohm.
Fig. 7 is impedance matching test result provided in an embodiment of the present invention, with reference to figure 7, by setting impedance matching structure
It is placed in the encapsulated layer of millimeter wave chip, when the system integration, directly by the millimeter wave chip with impedance matching structure
Encapsulating structure is connect with the signal transmssion line on printed circuit board, can directly obtain reflectance factor and 2dB less than -18dB
Within insertion loss, without designing additional matching network on circuit boards to which print greatly reduce in entire design
The design complexities of printed circuit board, while improving the efficiency of whole system.
Note that above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The present invention is not limited to specific embodiments described here, can carry out for a person skilled in the art it is various it is apparent variation,
It readjusts, be combined with each other and substitutes without departing from protection scope of the present invention.Therefore, although by above example to this
Invention is described in further detail, but the present invention is not limited only to above example, is not departing from present inventive concept
In the case of, can also include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (9)
1. a kind of millimeter wave chip-packaging structure, which is characterized in that including：
Millimeter wave chip, and cover the encapsulated layer of the millimeter wave chip；
The encapsulation layer surface is provided with external pin；
Impedance matching structure, the first end of the impedance matching structure and the millimeter wave chip are additionally provided in the encapsulated layer
Output end electrical connection, second end is electrically connected with the external pin.
2. encapsulating structure according to claim 1, it is characterised in that：
The impedance matching structure uses coplanar waveguide structure.
3. encapsulating structure according to claim 2, it is characterised in that：
The impedance matching structure uses impedance transition mechanism formula coplanar waveguide structure.
4. encapsulating structure according to claim 2, it is characterised in that：
The impedance matching structure uses the coplanar waveguide structure with open circuit or short-circuit minor matters.
5. encapsulating structure according to claim 2, it is characterised in that：
The impedance matching structure uses multistage difference impedance type coplanar waveguide structure.
6. encapsulating structure according to claim 1, it is characterised in that：
The external pin is solder ball.
7. encapsulating structure according to claim 1, it is characterised in that：
First port impedance at the first end of the impedance matching structure is the second of the output of the millimeter wave chip
The conjugate impedance of port Impedance.
8. a kind of printed circuit board, which is characterized in that including claim 1-7 any one of them millimeter wave chip package knots
Structure；
Wherein, the millimeter wave chip-packaging structure is electrically connected by external pin and the signal transmssion line on the printed circuit board
It connects.
9. circuit board according to claim 8, it is characterised in that：
The impedance of the signal transmssion line is 50 ohm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810353444.1A CN108447852A (en) | 2018-04-19 | 2018-04-19 | A kind of millimeter wave chip-packaging structure and printed circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810353444.1A CN108447852A (en) | 2018-04-19 | 2018-04-19 | A kind of millimeter wave chip-packaging structure and printed circuit board |
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| Publication Number | Publication Date |
|---|---|
| CN108447852A true CN108447852A (en) | 2018-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810353444.1A Pending CN108447852A (en) | 2018-04-19 | 2018-04-19 | A kind of millimeter wave chip-packaging structure and printed circuit board |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021114281A1 (en) * | 2019-12-13 | 2021-06-17 | 华为技术有限公司 | Electronic component, circuit board having same, and electronic device |
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| CN1819167A (en) * | 2005-01-05 | 2006-08-16 | 国际商业机器公司 | On-chip circuit pad structure and method of manufacture |
| US9093442B1 (en) * | 2013-03-15 | 2015-07-28 | Lockheed Martin Corporation | Apparatus and method for achieving wideband RF performance and low junction to case thermal resistance in non-flip bump RFIC configuration |
| CN105161468A (en) * | 2015-10-10 | 2015-12-16 | 中国电子科技集团公司第三十八研究所 | Radio frequency chip and passive device packaging structure and packaging method |
| US20150364816A1 (en) * | 2014-06-16 | 2015-12-17 | Texas Instruments Incorporated | Millimeter wave integrated circuit with ball grid array package including transmit and receive channels |
| CN105916286A (en) * | 2015-02-23 | 2016-08-31 | 松下知识产权经营株式会社 | Radio-frequency module |
| US20170005047A1 (en) * | 2015-06-30 | 2017-01-05 | Sumitomo Electric Industries, Ltd. | Electronic apparatus operable in high frequencies |
| CN208014693U (en) * | 2018-04-19 | 2018-10-26 | 加特兰微电子科技(上海)有限公司 | A kind of millimeter wave chip-packaging structure and printed circuit board |
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2018
- 2018-04-19 CN CN201810353444.1A patent/CN108447852A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040026794A1 (en) * | 2002-04-29 | 2004-02-12 | Yuming Tao | High speed I/O pad and pad/cell interconnection for flip chips |
| CN1819167A (en) * | 2005-01-05 | 2006-08-16 | 国际商业机器公司 | On-chip circuit pad structure and method of manufacture |
| US9093442B1 (en) * | 2013-03-15 | 2015-07-28 | Lockheed Martin Corporation | Apparatus and method for achieving wideband RF performance and low junction to case thermal resistance in non-flip bump RFIC configuration |
| US20150364816A1 (en) * | 2014-06-16 | 2015-12-17 | Texas Instruments Incorporated | Millimeter wave integrated circuit with ball grid array package including transmit and receive channels |
| CN105916286A (en) * | 2015-02-23 | 2016-08-31 | 松下知识产权经营株式会社 | Radio-frequency module |
| US20170005047A1 (en) * | 2015-06-30 | 2017-01-05 | Sumitomo Electric Industries, Ltd. | Electronic apparatus operable in high frequencies |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021114281A1 (en) * | 2019-12-13 | 2021-06-17 | 华为技术有限公司 | Electronic component, circuit board having same, and electronic device |
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