CN108446576B - Terminal modulation depth self-adaption method - Google Patents

Terminal modulation depth self-adaption method Download PDF

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Publication number
CN108446576B
CN108446576B CN201810045225.7A CN201810045225A CN108446576B CN 108446576 B CN108446576 B CN 108446576B CN 201810045225 A CN201810045225 A CN 201810045225A CN 108446576 B CN108446576 B CN 108446576B
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index
main control
value
terminal
contact card
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CN108446576A (en
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李滨滨
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Vanstone Electronic Beijing Co Ltd
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Vanstone Electronic Beijing Co Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/10Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
    • G06K7/10009Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
    • G06K7/10118Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves the sensing being preceded by at least one preliminary step
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/10Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
    • G06K7/10009Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
    • G06K7/10198Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves setting parameters for the interrogator, e.g. programming parameters and operating modes

Abstract

The invention discloses a terminal modulation depth self-adaption method, and relates to the field of electronic communication. The method comprises the following steps: and (3) a table building process: in the terminal production process, correcting the terminal by using a standard non-contact card to establish a modulation depth table, and storing the modulation depth table in the terminal; the self-adaptive process: before any non-contact card K carries out data interaction with the terminal, a main control chip on the terminal obtains a modulation register control value according to a modulation depth table stored in the terminal, the modulation register control value is written into a modulation register of a non-contact card reading chip of the terminal, the terminal completes self-adaptive adjustment, and the terminal starts to carry out data interaction with the non-contact card. The invention realizes the self-adaptive adjustment of the output modulation depth by inquiring the load condition of the communicating non-contact card, and simultaneously avoids influencing the normal communication between the non-contact card and the terminal in the adjustment process.

Description

Terminal modulation depth self-adaption method
Technical Field
The invention relates to the field of electronic communication, in particular to a communication method between a non-contact card and a terminal, wherein the non-contact card comprises a TYPE B card and a Felica card.
Background
In daily life, smart cards and financial cards with non-connection functions are more and more common, and the application range is wider and wider. During the production of the terminals, there are errors in the soldered devices that result in differences in the performance of the terminals. Meanwhile, the modulation signal of the terminal is also affected by the difference of external card loads. The above factors make the recognition rate of the terminal to some cards low. When the terminal is designed, although the non-contact card reading chip on the terminal can be ensured to support the adjustment command of the modulation depth, the non-contact card reading chip can generate noise waves in the automatic adjustment process, and the normal communication process with the non-contact card can be influenced.
Disclosure of Invention
The invention aims to provide a terminal modulation depth self-adaption method, so that the problem that in the prior art, normal communication between a non-contact card and a terminal is influenced finally due to the fact that signal modulation depths are not proper due to parameter differences of terminal devices and different loads of an external non-contact card is solved.
In order to achieve the above object, the method for terminal modulation depth adaptation according to the present invention includes:
and (3) a table building process: in the terminal production process, correcting the terminal by using a standard non-contact card to establish a modulation depth table, and storing the modulation depth table in the terminal;
the self-adaptive process: before any non-contact card K carries out data interaction with the terminal, a main control chip on the terminal obtains a modulation register control value according to a modulation depth table stored in the terminal, the modulation register control value is written into a modulation register of a non-contact card reading chip of the terminal, the terminal completes self-adaptive adjustment, and the terminal starts to carry out data interaction with the non-contact card.
Preferably, the table building process specifically comprises:
s1, initialization operation
Initializing variable values of a main control chip on the terminal, wherein the variable values comprise Index, an array TabX [ ], an array TabY [ ] and Lenth;
TabX [ Index ] represents the register value of the field strength measured when the load is at the height of Index; TabY [ Index ] represents a modulation register value which needs to be configured to the non-contact card reading chip when the field strength register is TabX [ Index ] and the target modulation depth is reached; index represents the position of the modulation depth table, corresponds to the load height value, and has an initialization value of 0; the Lenth is used for recording the length of an array, wherein the length of the array is the length value of the modulation depth table;
initializing a non-contact card reading chip: the field intensity value output by the non-contact card reading chip is a default working value;
s2, configuring a modulation register of the non-contact card reading chip by the main control chip, and starting an electromagnetic field of the non-contact card reading chip;
s3, an operator places the standard non-contact card in the terminal sensing area, and the distance between the standard non-contact card and the terminal sensing area is 0 cm;
s4, the main control chip judges whether the command received from the operator is a confirmation command or a cancel command, if the command is the confirmation command, the operation goes to S5; if the command is a cancel command, clearing the values of the array TabX [ ] and the array TabY [ ] stored by the main control chip before the current moment, and continuously waiting for the command sent by the operator; if the instruction received by the main control chip is neither a confirmation instruction nor a cancellation instruction, continuing to judge;
s5, the main control chip sends a field intensity measuring instruction to the non-contact card reading chip;
after receiving the field intensity measuring instruction, the non-contact card reading chip measures the current field intensity value and stores the current field intensity value in a modulation register;
s6, the main control chip sends a reading modulation register instruction to the non-contact card reading chip to obtain the current field intensity value stored in the modulation register of the non-contact chip, and the obtained current field intensity value is stored in the Index position in the array TabX [ ];
s7, the main control chip writes the target modulation depth into a modulation register of the non-contact card reading chip;
s8, the main control chip sends an automatic depth adjustment instruction to the non-contact card reading chip;
after receiving an automatic depth adjustment instruction, the non-contact card reading chip calls and obtains a modulation register value corresponding to the current field strength value under the condition of the current field strength value, and the obtained modulation register value is stored in a modulation register of the non-contact card reading chip;
s9, the main control chip sends a command of reading the modulation register to the non-contact card reading chip to obtain the value stored in the modulation register, and the main control chip stores the read value to the Index position in the array TabY [ ];
s10, updating the Index by the main control chip, and adding 1 to the Index value;
s11, the main control chip judges whether the Index value is smaller than the current Lenth value; if so, go to S12; if not, go to S13;
s12, the operator increases the distance between the standard non-contact card and the terminal sensing area by 1cm, and then returns to execute S4;
s13, the main control chip writes the obtained array TabX [ ] and array TabY [ ] into the FLASH memory chip for storage, and completes the establishment of the modulation depth table.
Preferably, the terminal adaptive adjustment process specifically includes:
a1, the initialization variable value Index of the main control chip of the terminal is 0, and ucantenna driver Strength is 0;
the Index is used for recording the storage array position; ucantennadriversttrength represents a value which needs to be written into a modulation register after adaptive adjustment;
a2, the main control chip obtains the modulation depth table stored in the FLASH memory chip; the modulation depth table comprises an array TabX [ ] and an array TabY [ ] and the length Lenth of the modulation depth table;
TabX [ Index ] represents the register value of the field strength measured when the load is at the height of Index; TabY [ Index ] represents a modulation register value which needs to be configured to the non-contact card reading chip when the field strength register is TabX [ Index ] and the target modulation depth is reached; index represents the position of the modulation depth table, and Index corresponds to the load height value; lenth is the length of the modulation depth table, and is the maximum Index value plus 1;
a3, the main control chip sends the instruction of measuring the current field intensity to the non-contact card reading chip, and the non-contact card reading chip measures the current field intensity value;
a4, the main control chip sends an instruction for reading the current field intensity value to the non-contact card reading chip to obtain the current field intensity value, and the obtained current field intensity value is recorded as ucAmplifiedcephase;
ucampituephase represents the carrier amplitude Pmax;
a5, the main control chip judges whether ucAmpultidephase is less than TabX [ Index ], namely: judging whether the ucAmplitudePhase is smaller than the numerical value of the Index position in the array TabX [ ], if so, directly executing A8; if not, executing A6;
a6, adding 1 to Index by the main control chip;
a7, the main control chip judges whether Index at the moment is less than Lenth of the modulation depth table, if yes, A5 is executed; if not, if the current Index is not in the modulation depth table, executing A8;
lenth represents the length value of the modulation depth table;
a8, the main control chip judges whether the current Index is equal to 0, if yes, A9 is executed; if not, executing A10;
a9, setting ucantennadriverStrength as the 0 position of the array TabY [ ] by the main control chip, marking as TabY [0], and entering A15;
a10, the main control chip judges whether Index is equal to Lenth, if yes, A11 is executed; if not, executing A13;
a11, subtracting 1 from Index by the main control chip, and entering A12;
a12, setting ucantennaDriverStrength as the Index position of the array TabY [ ] by the main control chip, marking as TabY [ Index ], and then executing A15;
a13, acquiring x by the main control chip1、y1、x2、y2、xi,x1=TabX[Index-1]、y1=TabY[Index-1]、x2=TabX[Index]、y2=TabY[Index]、xiucAmpolitudephase; will change the variable x1、y1、x2、y2Marked as two points, respectively expressed as (x)1,y1) And (x)2,y2) Then enter a 14;
a14, substituting variables into formula (1) by a main control chip of the terminal to calculate to obtain a value of ucantenna driver Strength:
ucAntennaDriverStrength=(xi-x1)×(y2-y1)/(x2-x1)+y1(1)
a15, the main control chip writes the obtained modulation field intensity value ucAntenna DriverStrength into the modulation register of the terminal non-contact card reading chip, and the self-adaptive adjustment process is completed.
The invention has the beneficial effects that:
the method of the invention uses a standard load non-contact card to carry out software correction on the terminal to establish a modulation depth table in the production stage of the terminal. And in the process that the user uses the terminal to communicate with the non-contact card, the modulation depth table is used for carrying out self-adaptation on the non-contact cards with different external loads. Namely: the output modulation depth is adjusted in a self-adaptive mode by inquiring the load condition of the non-contact card in communication, and meanwhile, the influence on normal communication between the non-contact card and a terminal in the adjusting process is avoided.
Drawings
FIG. 1 is a schematic flow chart of obtaining a modulation depth table;
fig. 2 is a flowchart illustrating the adaptation performed by the terminal using the modulation depth table.
Fig. 3 is a schematic diagram of the components of the terminal.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
The modulation depth, also called modulation degree, refers to the ratio of the amplitude of the modulated wave to the amplitude of the carrier wave, usually expressed as a percentage, i.e.:
md=(Pmax-Pmin)/(Pmax+Pmin);
where Pmax is the carrier amplitude and Pmin is the modulation amplitude.
And acquiring Pmax value by using the AD sampling function of the non-contact card. Meanwhile, the contactless card controls the Pmin value through a modulation register. And establishing a modulation depth table at the terminal production stage by utilizing the characteristic that a standard non-contact card reading chip supports a target modulation depth adjustment command. The method can avoid the noise generated by the non-contact card in the automatic adjustment process by only checking the modulation depth table to calculate the modulation register to control the Pmin value, and ensure the normal communication between the non-contact card and the terminal. Therefore, the more detailed explanation about the present application is:
standard load: is a contactless card that meets the PBOC standard. If the use of the terminal is not limited to bank cards only, calibration operations can be performed for a specific card.
The method for adapting modulation depth of a terminal in this embodiment includes:
and (3) a table building process: in the terminal production process, correcting the terminal by using a standard non-contact card to establish a modulation depth table, and storing the modulation depth table in the terminal;
the self-adaptive process: before any non-contact card K carries out data interaction with the terminal, a main control chip on the terminal obtains a modulation register control value according to a modulation depth table stored in the terminal, the modulation register control value is written into a modulation register of a non-contact card reading chip of the terminal, the terminal completes self-adaptive adjustment, and the terminal starts to carry out data interaction with the non-contact card.
More detailed explanation:
the table building process specifically comprises the following steps:
s1, initialization operation
Initializing variable values of a main control chip on the terminal, wherein the variable values comprise Index, an array TabX [ ], an array TabY [ ] and Lenth;
the value of the array TabX [ Index ] represents the register value of the field strength measured at the Index height of the load; the value of the array TabY [ Index ] indicates the modulation register value which needs to be configured to the non-contact card reading chip when the field intensity register is TabX [ Index ] and the target modulation depth is reached; index represents the position of the modulation depth table, corresponds to the load height value, and has an initialization value of 0; the Lenth is used for recording the length of an array, wherein the length of the array is the length value of the modulation depth table;
initializing a non-contact card reading chip: the field intensity value output by the non-contact card reading chip is a default working value;
s2, configuring a modulation register of the non-contact card reading chip by the main control chip, and starting an electromagnetic field of the non-contact card reading chip;
s3, an operator places the standard non-contact card in the terminal sensing area, and the distance between the standard non-contact card and the terminal sensing area is 0 cm;
s4, the main control chip judges whether the command received from the operator is a confirmation command or a cancel command, if the command is the confirmation command, the operation goes to S5; if the command is a cancel command, clearing the values of the array TabX [ ] and the array TabY [ ] stored by the main control chip before the current moment, and continuously waiting for the command sent by the operator; if the instruction received by the main control chip is neither a confirmation instruction nor a cancellation instruction, continuing to judge;
s5, the main control chip sends a field intensity measuring instruction to the non-contact card reading chip;
after receiving the field intensity measuring instruction, the non-contact card reading chip measures the current field intensity value and stores the current field intensity value in a modulation register;
s6, the main control chip sends a reading modulation register instruction to the non-contact card reading chip to obtain the current field intensity value stored in the modulation register of the non-contact chip, and the obtained current field intensity value is stored in the Index position in the array TabX [ ];
s7, the main control chip writes the target modulation depth into a modulation register of the non-contact card reading chip;
s8, the main control chip sends an automatic depth adjustment instruction to the non-contact card reading chip;
after receiving an automatic depth adjustment instruction, the non-contact card reading chip calls and obtains a modulation register value corresponding to the current field strength value under the condition of the current field strength value, and the obtained modulation register value is stored in a modulation register of the non-contact card reading chip;
s9, the main control chip sends a command of reading the modulation register to the non-contact card reading chip to obtain the value stored in the modulation register, and the main control chip stores the read value to the Index position in the array TabY [ ];
s10, updating the Index by the main control chip, and adding 1 to the Index value;
s11, the main control chip judges whether the Index value is smaller than the current Lenth value; if so, go to S12; if not, go to S13;
s12, the operator increases the distance between the standard non-contact card and the terminal sensing area by 1cm, and then returns to execute S4;
s13, the main control chip writes the obtained array TabX [ ] and array TabY [ ] into the FLASH memory chip for storage, and completes the establishment of the modulation depth table.
(II) the self-adaptive terminal adjusting process specifically comprises the following steps:
a1, the initialization variable value Index of the main control chip of the terminal is 0, and ucantenna driver Strength is 0;
the Index is used for recording the storage array position; ucantennadriversttrength represents a value which needs to be written into a modulation register after adaptive adjustment;
a2, the main control chip obtains the modulation depth table stored in the FLASH memory chip; the modulation depth table comprises an array TabX [ ] and an array TabY [ ] and the length Lenth of the modulation depth table;
the examples show that: the value of the array TabX [ Index ] represents the register value of the field strength measured at the Index height of the load; the value of the array TabY [ Index ] indicates the modulation register value which needs to be configured to the non-contact card reading chip when the field intensity register is TabX [ Index ] and the target modulation depth is reached; index indicates the position of the modulation depth table, and Index corresponds to the load height value, such as: the 0 position stores the value at 0CM height; lenth is the length of the modulation depth table, and is the maximum Index value plus 1;
a3, the main control chip sends the instruction of measuring the current field intensity to the non-contact card reading chip, and the non-contact card reading chip measures the current field intensity value;
a4, the main control chip sends an instruction for reading the current field intensity value to the non-contact card reading chip to obtain the current field intensity value, and the obtained current field intensity value is recorded as ucAmplifiedcephase;
ucampituephase represents the carrier amplitude Pmax;
a5, the main control chip judges whether ucAmpultidephase is less than TabX [ Index ], namely: judging whether the ucAmplitudePhase is smaller than the numerical value of the Index position in the array TabX [ ], if so, directly executing A8; if not, executing A6;
a6, adding 1 to Index by the main control chip;
a7, the main control chip judges whether Index at the moment is less than Lenth of the modulation depth table, if yes, A5 is executed; if not, if the current Index is not in the modulation depth table, executing A8;
lenth represents the length value of the modulation depth table;
a8, the main control chip judges whether the current Index is equal to 0, if yes, A9 is executed; if not, executing A10;
a9, setting ucantennadriverStrength as the 0 position of the array TabY [ ] by the main control chip, marking as TabY [0], and entering A15;
a10, the main control chip judges whether Index is equal to Lenth, if yes, A11 is executed; if not, executing A13;
a11, subtracting 1 from Index by the main control chip, and entering A12;
a12, setting ucantennaDriverStrength as the Index position of the array TabY [ ] by the main control chip, marking as TabY [ Index ], and then executing A15;
a13, acquiring x by the main control chip1、y1、x2、y2、xi,x1=TabX[Index-1]、y1=TabY[Index-1]、x2=TabX[Index]、y2=TabY[Index]、xiucAmpolitudephase; will change the variable x1、y1、x2、y2Marked as two points, respectively expressed as (x)1,y1) And (x)2,y2) Then enter a 14;
a14, substituting variables into formula (1) by a main control chip of the terminal to calculate to obtain a value of ucantenna driver Strength:
ucAntennaDriverStrength=(xi-x1)×(y2-y1)/(x2-x1)+y1(1)
a15, the main control chip writes the obtained modulation field intensity value ucAntenna DriverStrength into the modulation register of the terminal non-contact card reading chip, and the self-adaptive adjustment process is completed.
By adopting the technical scheme disclosed by the invention, the following beneficial effects are obtained: the method of the invention uses a standard load non-contact card to carry out software correction on the terminal to establish a modulation depth table in the production stage of the terminal. And in the process that the user uses the terminal to communicate with the non-contact card, the modulation depth table is used for carrying out self-adaptation on the non-contact cards with different external loads. Namely: the output modulation depth is adjusted in a self-adaptive mode by inquiring the load condition of the non-contact card in communication, and meanwhile, the influence on normal communication between the non-contact card and a terminal in the adjusting process is avoided.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements should also be considered within the scope of the present invention.

Claims (2)

1. A method for terminal modulation depth adaptation, the method comprising:
and (3) a table building process: in the terminal production process, correcting the terminal by using a standard non-contact card to establish a modulation depth table, and storing the modulation depth table in the terminal;
the table building process specifically comprises the following steps:
s1, initialization operation
Initializing variable values of a main control chip on the terminal, wherein the variable values comprise Index, an array TabX [ ], an array TabY [ ] and Lenth;
TabX [ Index ] represents the register value of the field strength measured when the load is at the height of Index; TabY [ Index ] represents a modulation register value which needs to be configured to the non-contact card reading chip when the field strength register is TabX [ Index ] and the target modulation depth is reached; index represents the position of the modulation depth table, corresponds to the load height value, and has an initialization value of 0; the Lenth is used for recording the length of an array, wherein the length of the array is the length value of the modulation depth table;
initializing a non-contact card reading chip: the field intensity value output by the non-contact card reading chip is a default working value;
s2, configuring a modulation register of the non-contact card reading chip by the main control chip, and starting an electromagnetic field of the non-contact card reading chip;
s3, an operator places the standard non-contact card in the terminal sensing area, and the distance between the standard non-contact card and the terminal sensing area is 0 cm;
s4, the main control chip judges whether the command received from the operator is a confirmation command or a cancel command, if the command is the confirmation command, the operation goes to S5; if the command is a cancel command, clearing the values of the array TabX [ ] and the array TabY [ ] stored by the main control chip before the current moment, and continuously waiting for the command sent by the operator; if the instruction received by the main control chip is neither a confirmation instruction nor a cancellation instruction, continuing to judge;
s5, the main control chip sends a field intensity measuring instruction to the non-contact card reading chip;
after receiving the field intensity measuring instruction, the non-contact card reading chip measures the current field intensity value and stores the current field intensity value in a modulation register;
s6, the main control chip sends a reading modulation register instruction to the non-contact card reading chip to obtain the current field intensity value stored in the modulation register of the non-contact chip, and the obtained current field intensity value is stored in the Index position in the array TabX [ ];
s7, the main control chip writes the target modulation depth into a modulation register of the non-contact card reading chip;
s8, the main control chip sends an automatic depth adjustment instruction to the non-contact card reading chip;
after receiving an automatic depth adjustment instruction, the non-contact card reading chip calls and obtains a modulation register value corresponding to the current field strength value under the condition of the current field strength value, and the obtained modulation register value is stored in a modulation register of the non-contact card reading chip;
s9, the main control chip sends a command of reading the modulation register to the non-contact card reading chip to obtain the value stored in the modulation register, and the main control chip stores the read value to the Index position in the array TabY [ ];
s10, updating the Index by the main control chip, and adding 1 to the Index value;
s11, the main control chip judges whether the Index value is smaller than the current Lenth value; if so, go to S12; if not, go to S13;
s12, the operator increases the distance between the standard non-contact card and the terminal sensing area by 1cm, and then returns to execute S4;
s13, the main control chip writes the obtained array TabX [ ] and the obtained array TabY [ ] into a FLASH memory chip for storage, and the modulation depth table is established;
the self-adaptive process: before any non-contact card K carries out data interaction with the terminal, a main control chip on the terminal obtains a modulation register control value according to a modulation depth table stored in the terminal, the modulation register control value is written into a modulation register of a non-contact card reading chip of the terminal, the terminal completes self-adaptive adjustment, and the terminal starts to carry out data interaction with the non-contact card.
2. The method for adapting the modulation depth of the terminal according to claim 1, wherein the terminal adaptive adjustment process specifically comprises:
a1, the initialization variable value Index of the main control chip of the terminal is 0, and ucantenna driver Strength is 0;
the Index is used for recording the storage array position; ucantennadriversttrength represents a value which needs to be written into a modulation register after adaptive adjustment;
a2, the main control chip obtains the modulation depth table stored in the FLASH memory chip; the modulation depth table comprises an array TabX [ ] and an array TabY [ ] and the length Lenth of the modulation depth table;
TabX [ Index ] represents the register value of the field strength measured when the load is at the height of Index; TabY [ Index ] represents a modulation register value which needs to be configured to the non-contact card reading chip when the field strength register is TabX [ Index ] and the target modulation depth is reached; index represents the position of the modulation depth table, and Index corresponds to the load height value; lenth is the length of the modulation depth table, and is the maximum Index value plus 1;
a3, the main control chip sends the instruction of measuring the current field intensity to the non-contact card reading chip, and the non-contact card reading chip measures the current field intensity value;
a4, the main control chip sends an instruction for reading the current field intensity value to the non-contact card reading chip to obtain the current field intensity value, and the obtained current field intensity value is recorded as ucAmplifiedcephase;
ucampituephase represents the carrier amplitude Pmax;
a5, the main control chip judges whether ucAmpultidephase is less than TabX [ Index ], namely: judging whether the ucAmplitudePhase is smaller than the numerical value of the Index position in the array TabX [ ], if so, directly executing A8; if not, executing A6;
a6, adding 1 to Index by the main control chip;
a7, the main control chip judges whether Index at the moment is less than Lenth of the modulation depth table, if yes, A5 is executed; if not, if the current Index is not in the modulation depth table, executing A8;
lenth represents the length value of the modulation depth table;
a8, the main control chip judges whether the current Index is equal to 0, if yes, A9 is executed; if not, executing A10;
a9, setting ucantennadriverStrength as the 0 position of the array TabY [ ] by the main control chip, marking as TabY [0], and entering A15;
a10, the main control chip judges whether Index is equal to Lenth, if yes, A11 is executed; if not, executing A13;
a11, subtracting 1 from Index by the main control chip, and entering A12;
a12, setting ucantennaDriverStrength as the Index position of the array TabY [ ] by the main control chip, marking as TabY [ Index ], and then executing A15;
a13, acquiring x by the main control chip1、y1、x2、y2、xi,x1=TabX[Index-1]、y1=TabY[Index-1]、x2=TabX[Index]、y2=TabY[Index]、xiucAmpolitudephase; will change the variable x1、y1、x2、y2Marked as two points, respectively expressed as (x)1,y1) And (x)2,y2) Then enter a 14;
a14, substituting variables into formula (1) by a main control chip of the terminal to calculate to obtain a value of ucantenna driver Strength:
ucAntennaDriverStrength=(xi-x1)×(y2-y1)/(x2-x1)+y1(1)
a15, the main control chip writes the obtained modulation field intensity value ucAntenna DriverStrength into the modulation register of the terminal non-contact card reading chip, and the self-adaptive adjustment process is completed.
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