CN108439408A - A method of preparing silicon carbide powder material using circuit base plate is discarded - Google Patents
A method of preparing silicon carbide powder material using circuit base plate is discarded Download PDFInfo
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- CN108439408A CN108439408A CN201810146622.3A CN201810146622A CN108439408A CN 108439408 A CN108439408 A CN 108439408A CN 201810146622 A CN201810146622 A CN 201810146622A CN 108439408 A CN108439408 A CN 108439408A
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- 239000000463 material Substances 0.000 title claims abstract description 48
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 35
- 238000005554 pickling Methods 0.000 claims abstract description 34
- 230000009467 reduction Effects 0.000 claims abstract description 29
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 21
- 238000001035 drying Methods 0.000 claims abstract description 19
- 238000000227 grinding Methods 0.000 claims abstract description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 10
- 239000010439 graphite Substances 0.000 claims abstract description 10
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 238000000197 pyrolysis Methods 0.000 claims description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 9
- 239000000843 powder Substances 0.000 abstract description 6
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 238000003786 synthesis reaction Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 239000010793 electronic waste Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000007146 photocatalysis Methods 0.000 description 3
- 230000001699 photocatalysis Effects 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002910 solid waste Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Processing Of Solid Wastes (AREA)
Abstract
The present invention provides a kind of methods preparing silicon carbide powder material using circuit base plate is discarded.Include the following steps：After being crushed by discarded circuit base plate, sub-elect copper powder, after remaining substrate is crushed, pickling, drying；Under inert gas protection, it is pyrolyzed 0.1~3 h in 200~900 DEG C, is cooled to room temperature, obtains thermal decomposition product；Above-mentioned thermal decomposition product is put into graphite furnace, under inert gas protection, 0.1~10 h of carbon thermal reduction is carried out in 1000~2000 DEG C, cooling, grinding obtains carbon thermal reduction product；After carrying out pickling to above-mentioned carbon thermal reduction product, it is washed to neutrality, drying, grinding, you can obtain silicon carbide powder material.The present invention makees raw material with discarded circuit base plate, provides a cost-effective SiC powder synthesis path, can also reduce its pollution to environment to a certain extent.This method is easy to operate, and reaction condition is easily-controllable, can be applied to the fields such as machinery, aviation and environmental protection.
Description
Technical field
The invention belongs to solid waste resource recoveries and silicon carbide preparing technical field.More particularly, to a kind of utilization
The method that discarded circuit base plate prepares silicon carbide powder material.
Background technology
With the development of electronics technology and popularizing for electronic product, electronic waste quantity sharply increases, it is contemplated that 2018 complete
The yield of ball electronic waste is 50,000,000 tons, and will keep annual about 2,000,000 tons of rapid growth.Discarded circuit board（PCB,
printed circuit board）It is the core component of electronic waste, accounts for about the 3% of electronic waste.Electronic component is removed
Discarded circuit board afterwards is known as discarded circuit base plate, mainly contains glass fibre, resin and copper powder, also contain a small amount of metal or
Person's metal oxide.Discarded circuit base plate, which is not added with, to be polluted the environment with processing, human health and social stability is threatened to develop.Cause
How this, carry out effective, innoxious, even recycling treatment to the discarded circuit base plate sharply increased and be total to as what the whole world faced
Same project.Discarded circuit base plate resource utilization method has at present：Copper powder and noble metal in recovery train substrate；It is pyrolyzed circuit base
Plate prepares carbon adsorbent.
Silicon carbide（SiC）It is high, anti-oxidant, corrosion-resistant with intensity, thermal conductivity is good, coefficient of thermal expansion is low and semiconductor
Property can be applicable to the various fields such as machinery, electronics, chemical industry, the energy, aerospace and environmental protection.In addition, low scale SiC also has
There are the properties such as hydrogen storage, photocatalysis and absorbing radar wave, also has in fields such as energy storage, photocatalysis, stealth materials boundless
Application prospect.
Therefore, using discarded circuit base plate as starting material, silicon carbide powder material is prepared by carbon thermal reduction, to realize
The recycling of discarded circuit base plate, turns waste into wealth, and has to the development of environmental protection and carbofrax material technology important
Realistic meaning.
Invention content
The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, provide a kind of discarded circuit base plate system of utilization
The method of standby silicon carbide powder material.The present invention makees raw material using circuit base plate is discarded, and provides a cost-effective SiC powder
Body synthesis path can also reduce its pollution to environment to a certain extent, solve this solid waste of discarded circuit base plate
Environment and renewable resources problem.
The object of the present invention is to provide a kind of methods preparing silicon carbide powder material using circuit base plate is discarded.
It is a further object of the invention to provide the silicon carbide powders by the high added value obtained by above-mentioned preparation method
Material.
Above-mentioned purpose of the present invention is achieved through the following technical solutions：
The present invention relates to a kind of methods preparing silicon carbide powder material using circuit base plate is discarded, and include the following steps：
S1. it discards after circuit base plate is crushed, sub-elects copper powder, after remaining substrate is crushed, pickling, drying；
S2. under inert gas protection, it is pyrolyzed 0.1~3 h in 200~900 DEG C, is cooled to room temperature, obtains thermal decomposition product；
S3. above-mentioned thermal decomposition product is put into graphite furnace, under inert gas protection, carbon heat is carried out also in 1000~2000 DEG C
0.1~10 h of original, cooling, grinding, obtains carbon thermal reduction product；
S4. after carrying out pickling to above-mentioned carbon thermal reduction product, neutrality, drying, grinding, you can obtain silicon carbide powder are washed to
Material.
To realize that the silicon carbide powder material discarded the recycling of circuit base plate and obtain high added value, the present invention carry
It has supplied a kind of to discard circuit base plate as the simple carbon thermal reduction preparation method of raw material, to obtain the carborundum powder of high added value
Body material.
Discarded circuit base plate is made of plate and copper printed wire, and " the crushing remaining substrate " refers to that will isolate
Discarded circuit base plate after copper powder.
Preferably, in step S1, the method for the pickling is：It is molten using the sulfuric acid that molar concentration is 0.1~6 mol/L
Liquid, salpeter solution or hydrochloric acid solution carry out pickling, to remove the metal oxide in circuit base plate.
It is highly preferred that in step S1, the method for the pickling is：Pickling is carried out using the salpeter solution of 1~3 mol/L.
If pyrolysis temperature is excessively high, carbon loss and energy waste can be caused；Pyrolysis temperature is too low, then can generate excessive coke-like
Object.If pyrolysis time is long, energy waste can be caused；Pyrolysis time is too short, then can be pyrolyzed not exclusively.
Preferably, in step S2, the temperature of the pyrolysis is 500~700 DEG C, and the time of pyrolysis is 0.5~1 h.
Preferably, it in step S3, after mixing with catalyst by thermal decomposition product elder generation, places into graphite furnace, it can
To reduce the formation temperature of silicon carbide and improve its yield.
Preferably, in step S3, the thermal decomposition product and catalyst in mass ratio 10~100：0.01~1000 mixing.
It is highly preferred that in step S3, the thermal decomposition product and catalyst in mass ratio 90~100：0.01~300 mixing.
Preferably, in step S3, the catalyst is activated carbon, Woelm Alumina or one kind or several in porous oxidation cerium
Kind.
It is highly preferred that in step S3, the catalyst is activated carbon.
Preferably, in step S3, the temperature of the carbon thermal reduction is 1500~1900 DEG C, and the time of carbon thermal reduction is 0.5
~2 h.
Preferably, in step S4, the method for the pickling is：It is molten using the sulfuric acid that molar concentration is 0.1~6 mol/L
Liquid, salpeter solution, hydrochloric acid solution or citric acid solution carry out pickling.
It is highly preferred that in step S4, the method for the pickling is：It is molten using the hydrochloric acid that molar concentration is 0.5~3 mol/L
Liquid carries out pickling.
Preferably, in step S1, the condition of the drying is：70~90 DEG C, 10~14 h；In step S4, the drying
Condition be：80 DEG C, 12 h.
Preferably, the inert gas is nitrogen.
Specifically in use, in step S1, first discarded circuit base plate is crushed with crusher, make various metals,
Nonmetallic materials will be completely dissociated；Copper powder is sub-elected by this field conventional method to broken smashing waste circuit base plate
Afterwards, pickling and drying are carried out then.
The cooling arrived involved in the present invention and grinding operation are carried out by the conventional method of this field, art technology
Personnel can according to actual needs be adjusted the parameters such as cooling means, cooling temperature, cooling time, milling time.
The invention further relates to a kind of silicon carbide powder materials being prepared by above-mentioned method.
Silicon carbide powder material produced by the present invention, purity are 95% or more, the powder body material of irregular shape, grain size
For 50~5000 nm, catalysis material or abrasive material etc. may be used as.
Silicon carbide powder material hardness height, corrosion resistance and wearability are good, can be used for the necks such as machinery, aviation and metallurgy
Domain is fabricated to grinding wheel, cutting grinding tool, advanced bearing, machinery sealing material and fan blade etc.；Its refractoriness is high, can be used for making
Make metallurgical refractory brick and metallurgical furnace lining；Also there is excellent high-temperature stability, thermal conductance and insulating properties, can be used for preparing high warm
The valve body of exchanger, large scale integrated circuit and high temperature nozzle and arrester, Microwave Absorbing Materials and infrared generator
Deng.
Compared with prior art, the beneficial effects of the invention are as follows：
The present invention uses discarded circuit base plate for starting material, makes full use of resin organic carbon and stripping fiber in wiring board,
The silicon carbide of high added value is prepared by simple carbon thermal reduction, can be applied to the multiple fields such as machinery, aviation and environmental protection,
And discarded circuit base plate processing handling problems are efficiently solved, the recycling of discarded circuit base plate is realized, become useless
For treasured.This method technical process is simple, easy control of process conditions.
Description of the drawings
Fig. 1 is the XRD diagram of the obtained silicon carbide powder material of Examples 1 to 3.
Specific implementation mode
Further illustrated the present invention below in conjunction with specific embodiment, but embodiment the present invention is not done it is any type of
It limits.Unless stated otherwise, the present invention uses reagent, method and apparatus is the art conventional reagent, methods and apparatus.
Unless stated otherwise, following embodiment agents useful for same and material are purchased in market.
A kind of method preparing silicon carbide powder material using circuit base plate is discarded of embodiment 1
（1）The use of molar concentration is 3 after remaining substrate is crushed after being crushed by discarded circuit base plate, sub-elect copper powder
The salpeter solution of mol/L carries out pickling, to remove the metal oxide in circuit base plate, drying；
（2）Under nitrogen protection, it is pyrolyzed 0.5 h under 700 DEG C of pyrolysis temperature, is cooled to room temperature, obtains thermal decomposition product；
（3）Above-mentioned thermal decomposition product is put into graphite furnace, under nitrogen protection, carbon thermal reduction 1 is carried out at a temperature of 1700 DEG C
H, cooling, grinding, obtains carbon thermal reduction product；
（4）Pickling is carried out using the hydrochloric acid solution that molar concentration is 3 mol/L to above-mentioned carbon thermal reduction product, is washed with water after pickling
To neutrality, after drying, grinding, you can obtain the silicon carbide powder material of high-purity.
A kind of method preparing silicon carbide powder material using circuit base plate is discarded of embodiment 2
（1）The use of molar concentration is 2 after remaining substrate is crushed after being crushed by discarded circuit base plate, sub-elect copper powder
The hydrochloric acid solution of mol/L carries out pickling, to remove the metal oxide in circuit base plate, drying；
（2）Under nitrogen protection, it is pyrolyzed 1 h under 700 DEG C of pyrolysis temperature, is cooled to room temperature, obtains thermal decomposition product；
（3）By above-mentioned thermal decomposition product and catalyst activity charcoal according to 100：50 mass ratio after mixing, is put into graphite furnace,
Under nitrogen protection, 1 h of carbon thermal reduction is carried out at a temperature of 1700 DEG C, cooling, grinding obtains carbon thermal reduction product；
（4）Pickling is carried out using the hydrochloric acid solution that molar concentration is 2 mol/L to above-mentioned carbon thermal reduction product, is washed with water after pickling
To neutrality, after drying, grinding, you can obtain the silicon carbide powder material of high-purity.
A kind of method preparing silicon carbide powder material using circuit base plate is discarded of embodiment 3
（1）The use of molar concentration is 1 after remaining substrate is crushed after being crushed by discarded circuit base plate, sub-elect copper powder
The sulfuric acid solution of mol/L carries out pickling, to remove the metal oxide in circuit base plate, drying；
（2）Under nitrogen protection, it is pyrolyzed 2 h under 500 DEG C of pyrolysis temperature, is cooled to room temperature, obtains thermal decomposition product；
（3）Above-mentioned thermal decomposition product is put into graphite furnace, under nitrogen protection, carbon thermal reduction 2 is carried out at a temperature of 1600 DEG C
H, cooling, grinding, obtains carbon thermal reduction product；
（4）Pickling is carried out using the hydrochloric acid solution that molar concentration is 1 mol/L to above-mentioned carbon thermal reduction product, is washed with water after pickling
To neutrality, after drying, grinding, you can obtain the silicon carbide powder material of high-purity.
The silicon carbide powder material that above-described embodiment 1~3 obtains, XRD spectra are as shown in Figure 1.By in Fig. 1 it is found that
It is pure carborundum crystals to arrive.The experimental results showed that the carbon of high-purity can be prepared using discarded circuit board by this method
SiClx powder crystal.In addition, it has also been found that, the silicon carbide powder crystal being prepared has good photocatalysis performance.
A kind of method preparing silicon carbide powder material using circuit base plate is discarded of embodiment 4
（1）The use of molar concentration is 0.1 after remaining substrate is crushed after being crushed by discarded circuit base plate, sub-elect copper powder
The sulfuric acid solution of mol/L carries out pickling, to remove the metal oxide in circuit base plate, drying；
（2）Under nitrogen protection, it is pyrolyzed 3 h under 200 DEG C of pyrolysis temperature, is cooled to room temperature, obtains thermal decomposition product；
（3）By above-mentioned thermal decomposition product and catalyst Woelm Alumina according to 10：0.01 mass ratio after mixing, is put into graphite
In stove, under nitrogen protection, 10 h of carbon thermal reduction is carried out at a temperature of 1000 DEG C, cooling, grinding obtains carbon thermal reduction production
Object；
（4）Pickling is carried out using the citric acid solution that molar concentration is 0.1 mol/L to above-mentioned carbon thermal reduction product, is used after pickling
It is washed to neutrality, after drying, grinding, you can obtain the silicon carbide powder material that purity is 99%.
A kind of method preparing silicon carbide powder material using circuit base plate is discarded of embodiment 5
（1）The use of molar concentration is 6 after remaining substrate is crushed after being crushed by discarded circuit base plate, sub-elect copper powder
The sulfuric acid solution of mol/L carries out pickling, to remove the metal oxide in circuit base plate, drying；
（2）Under nitrogen protection, it is pyrolyzed 0.1 h under 900 DEG C of pyrolysis temperature, is cooled to room temperature, obtains thermal decomposition product；
（3）By above-mentioned thermal decomposition product and catalyst Woelm Alumina according to 15：1 mass ratio after mixing, is put into graphite furnace
In, under nitrogen protection, 0.5 h of carbon thermal reduction is carried out at a temperature of 2000 DEG C, cooling, grinding obtains carbon thermal reduction product；
（4）Pickling is carried out using the citric acid solution that molar concentration is 6 mol/L to above-mentioned carbon thermal reduction product, water is used after pickling
It is washed till neutrality, after drying, grinding, you can obtain the silicon carbide powder material that purity is 96%.
A kind of method preparing silicon carbide powder material using circuit base plate is discarded of embodiment 6
After being crushed by discarded circuit base plate, sub-elect copper powder, after remaining substrate is crushed, directly dried without overpickling
Dry, other steps are the same as embodiment 1.
Nature examination is carried out to the silicon carbide powder material that the present embodiment obtains, it is found that its purity is very low, containing a large amount of
Impurity, when being used as catalysis material, effect is undesirable.
Above-described specific implementation mode has carried out further the purpose of the present invention, technical solution and advantageous effect
It is described in detail, it should be understood that the foregoing is merely the specific implementation mode of the present invention, is not intended to limit the present invention
Protection domain, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of method preparing silicon carbide powder material using circuit base plate is discarded, which is characterized in that include the following steps：
S1. it discards after circuit base plate is crushed, sub-elects copper powder, after remaining substrate is crushed, pickling, drying；
S2. under inert gas protection, it is pyrolyzed 0.1~3 h in 200~900 DEG C, is cooled to room temperature, obtains thermal decomposition product；
S3. above-mentioned thermal decomposition product is put into graphite furnace, under inert gas protection, carbon heat is carried out also in 1000~2000 DEG C
0.1~10 h of original, cooling, grinding, obtains carbon thermal reduction product；
S4. after carrying out pickling to above-mentioned carbon thermal reduction product, neutrality, drying, grinding, you can obtain silicon carbide powder are washed to
Material.
2. the method according to claim 1 for preparing silicon carbide powder material using circuit base plate is discarded, which is characterized in that
In step S1, the method for the pickling is：Use sulfuric acid solution, salpeter solution or the hydrochloric acid that molar concentration is 0.1~6 mol/L
Solution carries out pickling.
3. the method according to claim 1 for preparing silicon carbide powder material using circuit base plate is discarded, which is characterized in that
In step S2, the temperature of the pyrolysis is 500~700 DEG C, and the time of pyrolysis is 0.5~1 h.
4. the method according to claim 1 for preparing silicon carbide powder material using circuit base plate is discarded, which is characterized in that
In step S3, after mixing with catalyst by thermal decomposition product elder generation, place into graphite furnace.
5. the method according to claim 4 for preparing silicon carbide powder material using circuit base plate is discarded, which is characterized in that
The thermal decomposition product and catalyst in mass ratio 10~100：0.01~1000 mixing.
6. the method according to claim 4 for preparing silicon carbide powder material using circuit base plate is discarded, which is characterized in that
In step S3, the catalyst is one or more of activated carbon, Woelm Alumina or porous oxidation cerium.
7. the method according to claim 1 for preparing silicon carbide powder material using circuit base plate is discarded, which is characterized in that
In step S3, the temperature of the carbon thermal reduction is 1500~1900 DEG C, and the time of carbon thermal reduction is 0.5~2 h.
8. the method according to claim 1 for preparing silicon carbide powder material using circuit base plate is discarded, which is characterized in that
In step S4, the method for the pickling is：Use sulfuric acid solution, salpeter solution, the hydrochloric acid that molar concentration is 0.1~6 mol/L
Solution or citric acid solution carry out pickling.
9. the method according to claim 1 for preparing silicon carbide powder material using circuit base plate is discarded, which is characterized in that
The inert gas is nitrogen.
10. the silicon carbide powder material being prepared by claim 1~9 any one of them method.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109847896A (en) * | 2018-11-23 | 2019-06-07 | 华中科技大学 | It is rapidly heated pretreated discarded graphite electrode breaking method using photo-thermal |
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| CN101007313A (en) * | 2006-01-20 | 2007-08-01 | 巫协森 | Recovery method of discarded printed circuit boards |
| CN101386409A (en) * | 2008-10-16 | 2009-03-18 | 昆明理工大学 | Method for preparing silicon carbide nano line |
| CN101407596A (en) * | 2008-09-25 | 2009-04-15 | 上海第二工业大学 | Method for recycling epoxy resins and glass fibre from non-metal powder of waste printed circuit board |
| CN101774813A (en) * | 2010-01-20 | 2010-07-14 | 中国科学院山西煤炭化学研究所 | Method for preparing small-sized silicon carbide or silicon nitride nano particles from waste plastics |
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Application publication date: 20180824 |