CN108431922A - Electron emission electrode and the method manufactured for it - Google Patents
Electron emission electrode and the method manufactured for it Download PDFInfo
- Publication number
- CN108431922A CN108431922A CN201680077697.XA CN201680077697A CN108431922A CN 108431922 A CN108431922 A CN 108431922A CN 201680077697 A CN201680077697 A CN 201680077697A CN 108431922 A CN108431922 A CN 108431922A
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- Prior art keywords
- emission
- electron emission
- matrix
- tip
- electron
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
The present invention relates to a kind of methods for manufacturing the electron emission electrode (2) of electron source, the wherein described electron emission electrode has at least one emission tip (3), the emission tip is built as emitting electrons into ambient enviroment, and the method has following steps：A) matrix (1) that is made of fragmentation material, b are provided) machinery is carried out to matrix and/or hot surface is processed, to form emission tip, by fragmentation material from matrix stripping wherein at least around emission tip.The invention further relates to this electron emission electrode and the equipment with one or more electron emission electrodes.
Description
Technical field
The present invention relates to a kind of method for manufacturing the electron emission electrode of electron source, wherein electron emission electrode has
At least one emission tip, the emission tip are built as emitting electrons into ambient enviroment.In addition, the present invention relates to this
Kind electron emission electrode and the equipment with one or more electron emission electrodes.
Background technology
Such electron source at least one electron emission electrode can use in different applications, such as using
In electron microscope, field emission display screen or other equipment.The existing various suggestions for manufacturing electron source, such as
11 2,012 003 268 T5, EP 1 892 741 of DE is in A1 or 605 15 245 T2 of DE.Known manufacturing method is opposite
It is bothersome and especially do not obtain the required of electron emission electrode when in applied to field emission display screen (FET technology)
Durability.
Invention content
Therefore, the purpose that the present invention is based on is that proposition is a kind of for this improved side for manufacturing electron emission electrode
Method and a kind of improved electron emission electrode.
The purpose passes through a kind of method realization for manufacturing the electron emission electrode of electron source, wherein electron emission electrode
With at least one emission tip, the emission tip is built as emitting electrons into ambient enviroment.
A) matrix being made of fragmentation material, b are provided) machinery and/or hot surface processing are carried out to matrix, to form transmitting
Tip, by fragmentation material from matrix stripping wherein at least around emission tip.
Therefore, the present invention advantageously utilizes the special characteristics of easy fragmentation material.Fragmentation material, also referred to as easy fragmentation material
Material, is not appropriate in numerous applications due to the characteristic.Therefore, present inventors have recognized that, such material at least with table
Face processing (the easy Fracturing properties of the wherein described material are purposefully utilized) is obtained together in manufacture electron emission electrode side
Greatly improving for face and greatly improving in terms of the functional characteristic of obtained electron emission electrode.Then, this hair is utilized
It is bright to may be implemented in the running much longer service life of electron emission electrode so that can to realize tool for the first time using the present invention
There is the field emission display screen for meeting actual operation intensity (durability).It therefore, through the invention in practice can be for the first time
FED technologies are comprehensively utilized, advantage is, compared to the plane for the energy consumption that current display screen technology may be implemented to have much lower
Display screen.
In addition, the present invention allows this electron emission electrode of batch micro operations in a manner of especially economy.Manufacturing method can be with
Particularly efficiently scaled for big amount.In this way, the silicon wafer for example used in semiconductor technology is (such as with 300mm
Diameter) can be used for the manufacture of electron emission electrode according to the present invention.It is such as 5 × 5mm in manufacture size2Electronics hair
When transmitter array, about 2800 such electronic emitter arrays can be generated for each chip.
With it is current for realizing the scheme of the electron emission electrode in cause display screen on the scene compared with, it is electric for each transmitting
It can also extremely realize notable higher emission current, effect is can to drive Field emission displays using single emission tip
One pixel of screen.2000 to 3000 tips must be only used for single pixel in current FED cathode points, to real
Existing required current strength.Therefore, manufacture and the economy that this electron source can also be optimized in this regard, in particular for
For application in FED.Relative to heat emitters, the present invention has the advantages that other：Electron source significantly can compactly be realized simultaneously
And especially it is possible thereby to realize significantly more flat structure.The invention is particularly suited to the manufactures applied to flat-faced screen as a result,.
As fragmentation material, considers all materials with easily broken characteristic, i.e., edge breaks occur in processing
Material.Particularly suitable is, for example, silicon, not only in the form of monocrystal but also in the form of polycrystal.Silicon has following excellent
Point, with ideal fragmentation material property and also inexpensively in an appropriate form for example in the form of silicon wafers for making
With.
Another advantage of silicon materials is its high heat capacity and good heat conduction.This similarly for emission tip durability and
Speech is required, because so that the ablation on emission tip is minimum.
Other suitable materials are ceramic material, such as AlTiC or LaB6；Or unbodied material such as glass material is outstanding
It is the glass material such as ITO or silicon carbide of conduction.
Surface processing can be carried out by being machined, for example ground especially by machining, milling, turning
And/or drilling.The combination of such cutting process can also be applied advantageously.Hot-working underground heat can especially carry out indirectly, example
Such as pass through laser processing.
One according to the present invention is advantageously improved scheme, and fragmentation is generated by fracture at least in the region of emission tip
The rough surface of material.Rough surface is additionally conducive to the mentioned above of emission tip made according to the present invention herein
Advantageous characteristic, i.e. durability and relatively high emission current.
One according to the present invention is advantageously improved scheme, and mechanical surface processing includes that intersection is generated on the surface of matrix
And non-crossing slot, such as by cutting process.The pattern that rectangular can be generated on the surface of matrix by this method, by
This generates multiple emission tips in an operating procedure on matrix.Non-crossing slot especially can be constructed as parallel stretching, extension
Slot.The slot of intersection especially can be constructed as the slot of setting at right angles to each other.
One according to the present invention is advantageously improved scheme, and non-crossing slot is by overlapping cutting element along cutting line
Ground guides to generate, and to generate slot on the cutting line.It is possible thereby to " overlapping processing " be realized, wherein between each slot
It is smaller than the width of used cutting element, such as the thickness of abrasive cut-off wheel.Correspondingly, the operation width of cutting element is big
In the spacing of adjacent non-crossing slot.Overlapping by cutting line can generate desired rough surface due to fracture
Degree.It need not be subsequently to surface roughening.In addition, by generating sharp edge first to overlapping guiding as tool.
The desired emission tip of the shape in enough points can be generated in large quantities by subsequently generating the slot stretched with intersecting therewith,
Described slot itself again can be by generating the overlapping guiding of cutting element.The operating procedure of additional forming is herein not necessarily
's.
The tool does not necessarily obtain the generation of the slot on matrix according to overlapping guiding set forth above.This method
It can also be executed by " cutting process " form.In the case, and without the overlapping of cutting line.Emission tip it is desired
Characteristic herein therefore generated due to fragmentation material property.It to be manufactured due to the fracture characteristics of used fragmentation raw material
Emission tip region in pass through " cutting " formed fracture.The sharp edge type that fracture obtains emission tip is for example rubbly
Or the shape of sheet.
In the case, pass through suitably selected tool such as tool parameters such as abrasive media, coating, shape, rigidity, table
Face structuring, adjustment and control characteristic, cut radius, tool geometries, state of wear, and cutting separation process are for example cut
Line, depth of cut, feeding, cutting speed, tool angle, cooling medium can influence the shape of emission tip in a desired manner
At shape and influence by alone or in combination factor the fragmentation of material in a desired manner.Here, in manufacturer
During method, " overlapping process " and " cutting process " can replace and/or combination.
Addedly, fragmentation material can be caused by stress state and the environmental condition such as such as cooling purposefully set
Improved fragmentation.To this end it is possible to use, machinery, hot, geometry (shape, crackle etc.) and chemical influence and environment change
Become.
One according to the present invention is advantageously improved scheme, is processed in matrix by machinery to matrix and/or hot surface
The upper multiple emission tips of manufacture.It can be advantageous to be generated in an operating process of machinery and/or the hot surface processing of matrix
Multiple emission tips.Thus it is particularly possible to optimize the present invention for the batch micro operations of such emission tip.Thus tool is handed over
Changing the quantity that be not necessarily required in operation or tool exchanges can at least be minimized.
One according to the present invention is advantageously improved conceptual design and is, in machinery and/or the hot surface processing of matrix, base
The surface region of the formation base region of body is retained without being processed or differently being processed with the region for surrounding emission tip,
Middle emission tip is machined into the smaller structure height compared with the structure height of base region.Base region can advantageously be used
The installation site and spacing holder of accelerating grid electrode are acted on, to realized by this method using one or more emission tips
Whole electron source.
One according to the present invention is advantageously improved scheme, one of electron emission electrode, multiple or all emission tips
It is connected via the electric contact terminal of electric contact and electron emission electrode.Contact terminal is used for external contact, that is, is used for and electric energy
Or the control device of electron emission electrode establishes electrical connection.Electrical contact herein for example can be from emission tip via the remaining of matrix
Remaining material is carried out to contact terminal.The independent contact of any individual emission tip may be implemented so that transmitting point
End can individually control.Multiple emission tips can also be connected to each other via common electric contact so that it can be total in groups
With control.
One according to the present invention is advantageously improved scheme, and one or more hairs will be respectively provided on processed matrix
Penetrate tip one or more electron emission electrodes carry out be segmented and/or be partitioned into from processed matrix be respectively provided with one or
One or more electron emission electrodes of multiple emission tips.It can be provided in a manner of efficient in production technology by this method
The desired structure of electron emission electrode and thus desired structure that electron source is provided.In the case, to identical
Matrix on one or more emission tips carry out other formings be interpreted as being segmented.Segmentation is interpreted as sending out one or more
Radio pole for example separates in the form of the group of multiple emission electrodes with matrix.The step of segmentation and/or segmentation is especially in root
According to execution after the step b) of the present invention.Other manufacturing steps can be executed before segmentation and/or segmentation, such as in order to encapsulate
It electron emission electrode and mechanically and electrically contacts.
In addition, the purpose described in beginning is solved by the electron emission electrode of electron source, wherein electron emission electrode has
At least one emission tip, the emission tip are built as emitting electrons into ambient enviroment, wherein at least emission tip
It is made of the fragmentation material with rough surface.Thus the advantage set forth above of the present invention can also be realized.
One according to the present invention is advantageously improved scheme, and electron emission electrode has multiple emission tips, the transmitting
Tip is arranged with regular or irregular pattern matrix shape.Emission tip can be in electrical contact jointly in groups or individually electricity connects
It touches so that they can individually be controlled.
One according to the present invention is advantageously improved scheme, and electron emission electrode has the one or more transmittings of multiple encirclements
The base region for being suitable as the spacing holder for accelerating grid electrode at tip has than one or more emission tips
The structure height of structure height bigger.There is a possibility that the advantageous installation of the accelerating grid electrode for electron source by this method.
Electron emission electrode can especially have rough surface in the region of emission tip, such as with surface roughness
Ra=0.3-0.8 μm.The surface roughness of rough surface especially can be in following range a), b) or c) in：
a)Ra=0.3-2.5 μm, Rz=1.2-12 μm,
b)Ra=0.3-1.5 μm, Rz=1.5-7.5 μm,
c)Ra=0.3-0.8 μm, Rz=1.8-5 μm,
According to ISO25178, RaRepresent mean roughness, RzRepresent average roughness depth (being also ten point heights).
The beneficial characteristic of emission tip according to the present invention is further improved as a result, especially durability and height
Current strength.
In addition, the present invention relates to a kind of equipment, have one or more type described above electron emission electrode and/
Or electron source.The equipment for example can be flat-faced screen, especially be in following form：Field emission display screen or electron microscopic
Mirror, X-ray equipment, transmitting mass spectrograph such as ion move mass spectrograph such as radar equipment, magnetron or micro-wave oven.
Description of the drawings
The present invention is elaborated by using attached drawing in more detail referring to embodiment.
In the accompanying drawings：
Fig. 1 shows the three-dimensional view of matrix, and
Fig. 2 shows the three-dimensional views according to the regional area of the matrix of Fig. 1, and
Fig. 3 shows the three-dimensional view of emission tip, and
Figure 4 shows in side view local details according to fig. 2；
Fig. 5, Fig. 6 show " overlapping process " and
Fig. 7, Fig. 8 are shown " cutting process ".
In these figures, the element that identical reference numeral is used to indicate to correspond to each other.
Specific implementation mode
Fig. 1 shows the matrix being made of fragmentation material, such as silicon wafer.Matrix 1 is processed according to the present invention, this is under
It is elaborated with reference to the regional area of matrix 1 in text, which forms electron emission electrode 2.
Fig. 2 shows the enlarged views of regional area, wherein carried out surface processing to matrix 1, by surface plus
Work, regional area are formed to have the electron emission electrode 2 of multiple emission tips.In fig. 2 it can be seen that multiple tip shapes
Lug boss 3 arrangement, the lug boss includes the emission tip of electron emission electrode 2.There are multiple lines in the edge region
The lug boss 4 of shape, the lug boss 4 surround the arrangement of the rectangular of the lug boss 3 of tip shape.In the phase of electron emission electrode 2
In the end regions answered, there are cube shaped lug boss 5, the lug boss 5 may be used as the basal seat area of electron emission electrode
Domain.The lug boss 3,4,5 is on the remaining bottom section 8 of matrix 1.The arrangement of lug boss 3,4,5 shown in Fig. 1
Can the surface of matrix 1 be directed through by the direction A and B that intersect tool along two to generate in a simple manner.It is logical
It crosses and tool is generated into multiple non-crossing slots 6 along direction A guiding.By the way that tool is generated multiple non-friendships along direction B guiding
The slot 7 of fork.Slot 6 intersects with slot 7, such as with crossing at right angle.Thus structure shown in lug boss 3,4,5 must be obtained.
This can for example be carried out by generating slot in two operating procedures.This can use the cutter of V-arrangement first
Piece, which defines the acute angles of emission tip.(it is concurrently drawn along direction B in multiple steps by the cutting blade of V-arrangement
Lead and then concurrently guided in multiple steps along direction A respectively) generate tip.Tip shape is further defined as a result,
The structure height h of lug boss.Then, it is determined on bottom section 8 by another tool (it for example generates the slot of U-shaped)
The length of the lug boss of tip shape.Tool is equally directed through matrix 1 across along direction A and B, this is also referred to as segmented.
Therefore lug boss 3,4,5 is formd, there is certain structure height h on bottom section 8.Due to base region 5
Determining surface region is not processed in the case, so the surface region is finally with higher than the structure of lug boss 3,4
Spend the structure height h of bigger.
Fig. 3 schematically illustrates the enlarged view of lug boss 3.It can be seen that in cube shaped pedestal section 10
One emission tip 9 of upper each self-forming electron emission electrode.
Fig. 4 shows the side view of arrangement according to fig. 2, wherein after other procedure of processings add show electric contact with
And accelerating grid electrode.
First it can be seen that the structure height h of lug boss 3 and thus emission tip 9 is less than the structure height of base region 5
Spend h.
Correspondingly, the accelerating grid electrode 14 of plane can be arranged and be fixed on base region 5, without being touched with emission tip 9
It touches.
Emission tip 9 can individually or in groups via the electric contact of the material across matrix and circuit 11 with contact
Terminal 12 connects.It can be in electrical contact via other electric lines 13 by contact terminal 12 and feed signals to emission tip
In 9.The manufacture of emission tip 9 and pedestal section 10 can be carried out by " overlapping process ", be shown in fig. 5 and fig..It is first
First, so that tool is passed through material 20 along cutting line 21, then guided in parallel along cutting line 22.In the case, go out
Existing overlapping region 25, generates emission tip 25 in the overlapping region, is then executed along two different cut direction A, B identical
Process.Then, it carries out being segmented as shown in FIG. 6, by guiding another tool to carry out along cutting line 23,24.As a result, by
Material 20 generates pedestal section 10.It is as shown in FIG. 2 instead of being segmented, can also be had in the case of depth of cut bigger
There is the segmentation of the emission tip 9 of its pedestal section 10.
It is described " cutting process " with reference to Fig. 7 and 8.In the case, identical tool can substantially be used.First
In operating procedure, before with reference to described by Fig. 5, but tool is guided along cutting line 21,22, wherein there is overlapping region 25.
Correspondingly, at middle part there are segments of material, the segments of material becomes emission tip 9.In the case, there is material fracture
26, also referred to as " cut ".This advantageously influences the function of emission tip 9 and durable due to the Fracturing properties of used material
Property.Then, it carries out being segmented as shown in FIG. 8, by guiding another tool to carry out along cutting line 23,24.As a result, by material
20 generate pedestal section 10.It is as shown in FIG. 2 instead of being segmented, it can also carry out that there is it in the case of depth of cut bigger
The segmentation of the emission tip 9 of pedestal section 10.
Claims (13)
1. a kind of method for manufacturing the electron emission electrode (2) of electron source,
The wherein described electron emission electrode (2) have at least one emission tip (9), the emission tip (9) be built as by
In electron emission to ambient enviroment, the method has following steps：
A) matrix (1) being made of fragmentation material is provided,
B) mechanical surface processing is carried out to described matrix (1) and/or hot surface is processed, to form the emission tip (9), wherein
Fragmentation material is removed from described matrix (1) at least around the emission tip (9).
2. the method according to the claims, which is characterized in that at least pass through in the region of the emission tip (9)
Fragmentation generates the rough surface of fragmentation material.
3. method according to any one of the preceding claims, which is characterized in that the mechanical surface, which is processed, includes：Institute
It states and generates slot (6,7) intersect and non-crossing on the surface of matrix (1).
4. method according to any one of the preceding claims, which is characterized in that the non-crossing slot (6,7) pass through by
Cutting element along cutting line it is overlapping guide and generate, the slot is generated at the cutting line.
5. method according to any one of the preceding claims, which is characterized in that pass through the machinery to described matrix (1)
And/or hot surface processing manufactures multiple emission tips (9) in described matrix (1).
6. method according to any one of the preceding claims, which is characterized in that the multiple emission tip (9) is to institute
It states and is generated in the machinery of matrix (1) and/or an operating process of hot surface processing.
7. method according to any one of the preceding claims, which is characterized in that described matrix (1) machinery and/
Or in hot surface processing, the surface region of the formation base region (5) of described matrix (1) be retained without be processed or with encirclement
The region of the emission tip (9) differently processes, wherein the emission tip (9) is machined into and the knot of base region (5)
Structure height compares smaller structure height (h).
8. method according to any one of the preceding claims, which is characterized in that the one of the electron emission electrode (2)
A, multiple or all emission tips (9) connect via the electric contact terminal (12) of electric contact (11) and the electron emission electrode (2)
It connects.
9. method according to any one of the preceding claims, which is characterized in that will respectively on processed matrix (9)
One or more electron emission electrodes (2) with one or more emission tips (9) are segmented, and/or from processed
Matrix (1) is partitioned into the one or more electron emission electrodes (2) for being respectively provided with one or more emission tips (9).
10. a kind of electron emission electrode of electron source (2), wherein the electron emission electrode (2) has at least one transmitting point
It holds (9), the emission tip (9) is built as emitting electrons into ambient enviroment, which is characterized in that at least described transmitting point
End (9) is made of the fragmentation material with rough surface.
11. according to the electron emission electrode described in a upper claim, which is characterized in that the electron emission electrode (2) has
Multiple emission tips (9), the emission tip are arranged according to regular or irregular pattern matrix shape.
12. the electron emission electrode according to any one of claim 10 to 11, which is characterized in that the electron emission electricity
Pole (2) has multiple interval guarantors being suitable as accelerating grid electrode (14) for surrounding one or more of emission tips (9)
The base region (5) of holder, the base region have than one or more of emission tips (9) structure height (h) more
Big structure height (h).
13. a kind of equipment has one or more electron emission electrodes according to any one of claims 10 to 12
(2)。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015118805.8A DE102015118805A1 (en) | 2015-11-03 | 2015-11-03 | Electron emission electrode and method for its production |
| DE102015118805.8 | 2015-11-03 | ||
| PCT/EP2016/076298 WO2017076831A1 (en) | 2015-11-03 | 2016-11-01 | Electron emission electrode and process for production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108431922A true CN108431922A (en) | 2018-08-21 |
| CN108431922B CN108431922B (en) | 2020-03-03 |
Family
ID=57286459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680077697.XA Expired - Fee Related CN108431922B (en) | 2015-11-03 | 2016-11-01 | Electron emission electrode and method for manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3371820B1 (en) |
| CN (1) | CN108431922B (en) |
| DE (1) | DE102015118805A1 (en) |
| WO (1) | WO2017076831A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081505A (en) * | 2019-12-24 | 2020-04-28 | 中山大学 | Nano cold cathode electron source with coplanar double-gate focusing structure and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1335389A (en) * | 1970-08-28 | 1973-10-24 | Secr Defence | Electron emitter materials |
| US6201342B1 (en) * | 1997-06-30 | 2001-03-13 | The United States Of America As Represented By The Secretary Of The Navy | Automatically sharp field emission cathodes |
| US20030155859A1 (en) * | 1999-03-19 | 2003-08-21 | Masayuki Nakamoto | Method of manufacturing field emission device and display apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5393647A (en) * | 1993-07-16 | 1995-02-28 | Armand P. Neukermans | Method of making superhard tips for micro-probe microscopy and field emission |
| WO2006135093A1 (en) | 2005-06-17 | 2006-12-21 | Sumitomo Electric Industries, Ltd. | Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device |
| CN101452797B (en) * | 2007-12-05 | 2011-11-09 | 清华大学 | Field emission type electronic source and manufacturing method thereof |
| JP5919049B2 (en) | 2011-09-26 | 2016-05-18 | 株式会社日立ハイテクノロジーズ | Field emission electron source |
-
2015
- 2015-11-03 DE DE102015118805.8A patent/DE102015118805A1/en not_active Withdrawn
-
2016
- 2016-11-01 CN CN201680077697.XA patent/CN108431922B/en not_active Expired - Fee Related
- 2016-11-01 EP EP16794547.6A patent/EP3371820B1/en active Active
- 2016-11-01 WO PCT/EP2016/076298 patent/WO2017076831A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1335389A (en) * | 1970-08-28 | 1973-10-24 | Secr Defence | Electron emitter materials |
| US6201342B1 (en) * | 1997-06-30 | 2001-03-13 | The United States Of America As Represented By The Secretary Of The Navy | Automatically sharp field emission cathodes |
| US20030155859A1 (en) * | 1999-03-19 | 2003-08-21 | Masayuki Nakamoto | Method of manufacturing field emission device and display apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081505A (en) * | 2019-12-24 | 2020-04-28 | 中山大学 | Nano cold cathode electron source with coplanar double-gate focusing structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017076831A1 (en) | 2017-05-11 |
| CN108431922B (en) | 2020-03-03 |
| EP3371820A1 (en) | 2018-09-12 |
| DE102015118805A1 (en) | 2017-05-04 |
| EP3371820B1 (en) | 2019-09-11 |
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