CN108431291A - Ultraviolet reflecting film and sputtering target - Google Patents
Ultraviolet reflecting film and sputtering target Download PDFInfo
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- CN108431291A CN108431291A CN201680069937.1A CN201680069937A CN108431291A CN 108431291 A CN108431291 A CN 108431291A CN 201680069937 A CN201680069937 A CN 201680069937A CN 108431291 A CN108431291 A CN 108431291A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/12—Alloys based on aluminium with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
A kind of rare earth element by the way that ultraviolet reflecting film will be constituted, the amount of Cu and remaining Al and the rate control of rare earth element and Cu are provided in defined range, to the reflectivity of the ultraviolet light of wavelength 254nm be 85% or more ultraviolet reflecting film.A kind of ultraviolet reflecting film contains one or more kinds of rare earth elements：0.2at% or more and 3.0at% are hereinafter, and Cu：Any one in 0.2at% or more and 6.0at% or less, surplus is made of Al and inevitable impurity, meets following (1) formulas, the reflectivity of the ultraviolet light of wavelength 254nm is 85% or more.[X is the amount [at%] of rare earth element to X+0.5Y ＜ 3.5 ... (1), and Y is the amount [at%] of Cu.].
Description
Technical field
The present invention relates to ultraviolet reflecting films and sputtering target.
Background technology
Ultraviolet reflecting film is in ultraviolet sterilizer or for making the cured resin solidification dress of uv curing resin
The use of the instrument set etc. and lighting tool containing ultraviolet ray emitting element or device etc. etc. is used on the way.It converts and imitates from energy
From the perspective of rate or cost etc., expeditiously reflection ultraviolet light is critically important, and in patent document 1,3 and 4, research is by gold
Belong to the ultraviolet reflecting film constituted.
As ultraviolet light source used in such device, for example, Cooper-Hewitt lamp, high-pressure mercury-vapor lamp or super can be enumerated
High-pressure mercury-vapor lamp etc. is respectively provided with distinctive peak wavelength and intensity, can select light source appropriate according to purpose is used.Its
In, there is the Cooper-Hewitt lamp of strong peak value in 254nm, for example, it is suitble to the various uses of sterilizing and surfaction etc., and it is extensive
It uses.It is therefore desirable to be capable of the ultraviolet reflecting film of the ultraviolet light of high efficiency reflection 254nm.
【Existing technical literature】
【Patent document】
【Patent document 1】Japanese Unexamined Patent Publication 2015-43468 bulletins
【Patent document 2】Japanese Unexamined Patent Publication 2002-323611 bulletins
【Patent document 3】No. 4981979 bulletins of Japanese Patent No.
【Patent document 4】Japanese Unexamined Patent Publication 61-148883 bulletins
【Patent document 5】Japanese Unexamined Patent Publication 2011-21275 bulletins
But it about the reflection of UV light region, is not studied adequately.For example, in patent document 1, as with
In the reflectance coating of ultraviolet semiconductor light-emitting component, Al, Rh, Si and its alloy are there are, but there is no embodiment, about ultraviolet region
The reflectivity in domain is not studied fully.
In patent document 2, as the reflectance coating with high reflectance and high-durability, proposition has Ag alloys, but only
The research of visible light region does not make a search for the reflectivity of UV light region then.In addition, study in patent document 3,
By controlling the roughness on the surface of Ag alloys, and high reflectance is obtained in the regions below 400nm, but there is no 375nm or less
Embodiment, the reflectivity of the ultraviolet light about 254nm do not studied.In addition, in general, in visible light region, Ag or
Ag alloys have high reflectance, but in the UV light regions below 380nm, and reflectivity then drastically reduces, and in 254nm, its reflectivity is
25% or so.
In patent document 5, description be the visible light region brought about the alloying of Al reflectivity raising, but
The reflectivity in relation to UV light region is not referred to.
Invention content
It is done currently invention addresses above-mentioned problem, it is intended that providing one kind by the way that ultraviolet reflection will be constituted
The rare earth element of film, the amount of Cu and remaining Al and the rate control of rare earth element and Cu in defined range, to
The ultraviolet reflecting film that the reflectivity of the ultraviolet light of wavelength 254nm is 85% or more.In addition, its purpose also resides in, one kind is provided
With the sputtering target formed in this way.
The ultraviolet reflecting film of the present invention contains one or more kinds of rare earth elements：0.2at% or more and
3.0at% or less and Cu：0.2at% or more and at least one of 6.0at% or less, surplus by Al and inevitably it is miscellaneous
Texture is at meeting following (1) formulas, the reflectivity of the ultraviolet light of wavelength 254nm is 85% or more.
X+0.5Y ＜ 3.5 ... (1)
Here, X is the amount [at%] of rare earth element, Y is the amount [at%] of Cu.
Can be from Sc, Nd, Gd, La, Y, Ce, Pr and Dy institute structure for the rare earth element of ultraviolet reflecting film
At group in more than one the element that selects.
The film of ultraviolet reflecting film can be 50nm or more and 2000nm or less.
The sputtering target of the present invention contains one or more kinds of rare earth elements：0.2at% or more and 3.0at% with
Under and Cu：0.2at% or more and 6.0at% it is below at least one, surplus is made of Al and inevitable impurity, meet
Following (2) formulas.
X+0.5Y ＜ 3.5 ... (2)
Here, X is the amount [at%] of rare earth element, Y is the amount [at%] of Cu.
Can be the group constituted from Sc, Nd, Gd, La, Y, Ce, Pr and Dy for the rare earth element of sputtering target
The more than one element of middle selection.
The ultraviolet reflecting film of the present invention, by the rare earth element, Cu and remaining Al that will constitute ultraviolet reflecting film
Amount and the rate control of rare earth element and Cu in defined range, to which the reflectivity of the ultraviolet light of wavelength 254nm is
85% or more, there is excellent reflectivity.In addition, the sputtering target of the present invention, excellent ultraviolet of the reflectivity like this that can form a film
Line reflection film.
Specific implementation mode
Hereinafter, illustrating the details of the ultraviolet reflecting film and sputtering target of the present invention.
＜ ultraviolet reflecting films ＞
[compositions of 1. ultraviolet reflecting films]
The ultraviolet reflecting film of the present invention contains one or more kinds of rare earth elements：0.2at% or more and
3.0at% or less and Cu：0.2at% or more and at least one of 6.0at% or less, surplus by Al and inevitably it is miscellaneous
Texture is at meeting following (1) formulas, the reflectivity of the ultraviolet light of wavelength 254nm is 85% or more.
X+0.5Y ＜ 3.5 ... (1)
Here, X is the amount [at%] of rare earth element, Y is the amount [at%] of Cu.
In addition, the rare earth element can be selected in the group constituted from Sc, Nd, Gd, La, Y, Ce, Pr and Dy
More than one element.
It is described in detail below for each element and formula (1).
(1) function of rare earth element and Cu
The ultraviolet reflecting film of the present invention contains one or more kinds of rare earth elements and Cu at least with specified amount
One.
When by Al with sputtering film-forming, Al becomes shaggy film, and reflectivity reduces.But if addition terres rares member
Element or Cu, then rare earth element or Cu are difficult to happen diffusion into the surface on substrate, therefore become the nucleating point of Al, Al on substrate
Nucleation density be added.As a result, fine crystal grain increases and organizes miniaturization, therefore the roughness on surface becomes smaller.
In this way, by containing rare earth element or Cu, the surface of ultraviolet reflecting film can be made to compare flat, even if by
When sputtering film-forming, it also can inhibit reflectivity reduction and obtain high reflectance.
(2) one or more kinds of rare earth element：0.2at% or more and 3.0at% or less
The ultraviolet reflecting film of the present invention, by containing one or more kinds of rare earth element 0.2at% or more and
3.0at% hereinafter, the roughness on the surface of ultraviolet reflecting film can be reduced, the reflectivity of the ultraviolet light of 254nm up to 85% with
On, there is excellent reflectivity.When rare earth element is less than 0.2at%, crystal grain is difficult to miniaturization, reduces the roughness on surface
Effect dies down, and cannot obtain 85% reflectivity.In addition, when rare earth element is higher than 3.0at%, the low reflection of rare earth element
Rate impacts the reflectivity of ultraviolet reflecting film, and reflectivity is made to reduce, therefore cannot obtain 85% reflectivity.
From the viewpoint of obtaining better ultraviolet reflection rate, the preferred upper limit of the content of rare earth element is
1at%, more preferably 2at%.
In addition, from the viewpoint of obtaining better ultraviolet reflection rate, rare earth element preferably from Sc, Nd, Gd,
More than one the element selected in the group that La, Y, Ce, Pr and Dy are constituted.
(3)Cu：0.2at% or more and 6.0at% or less
About the ultraviolet reflecting film of the present invention, by containing 0.2at% or more and 6.0at% Cu below, it is believed that energy
Enough reduce the roughness on the surface of ultraviolet reflecting film, the reflectivity of the ultraviolet light of 254nm has excellent anti-up to 85% or more
Penetrate rate.When Cu is less than 0.2at%, crystal grain is difficult to miniaturization, it is believed that the effect for reducing the roughness on surface dies down, and cannot obtain
85% reflectivity.In addition, when Cu is higher than 6.0at%, the antiradar reflectivity of Cu impacts the reflectivity of ultraviolet reflecting film,
So that reflectivity is reduced, therefore 85% reflectivity cannot be obtained.
From the viewpoint of obtaining better ultraviolet reflection rate, the preferred lower limit of the content of Cu is 0.5at%, more excellent
It is selected as 1at%, the preferred upper limit is 5at%, more preferably 4at%.
(3) relationship ((1) formula) of the amount Y [at%] of the amount X [at%] and Cu of rare earth element
As above-mentioned, rare earth element and Cu are considered having the effect of reducing the roughness on surface jointly, and result thinks,
It can obtain the reflectivity of excellent ultraviolet light.
On the other hand, as above-mentioned, rare earth element and Cu the problem is that, superfluous addition can cause reflectivity to drop
It is low.Therefore, the two and used time can then obtain having excellent by containing the two in the range of relational expression as defined in satisfaction
Reflectivity ultraviolet reflecting film.That is, the amount Y [at%] of the amount X [at%] and Cu of rare earth element meet following (1) formulas.
X+0.5Y ＜ 3.5 ... (1)
From the viewpoint of obtaining better ultraviolet reflection rate, the preferred upper limit of the sum of X and 0.5Y are 3.0, more excellent
It is selected as 2.5.
(4) Al and inevitable impurity (surplus)
The ultraviolet reflecting film of the present invention, in addition to rare earth element and Cu or more, also containing surplus Al and inevitably
Impurity can be mixed into according to the situation of raw material, goods and materials or manufacturing equipment etc..As inevitable impurity, for example, can arrange
Lift Fe, In, Sn, Ni, Ti, Mg, Cr and Zr etc..The preferred upper limit of the content of inevitable impurity is 0.03wt%.
[reflectivity of 2. ultraviolet reflecting films]
In the present specification, the reflectivity of so-called ultraviolet reflecting film is anti-using ultraviolet specrophotometer measure spectrum
The value for penetrating rate, be ultraviolet reflecting film intensity of reflected light for reference mirror intensity of reflected light ratio.As ultraviolet spectrometry
Photometer, for example, visible ultraviolet spectrophotometer " V-570 " (Japan Spectroscopy Corporation's system) can be enumerated.
The reflectivity of the ultraviolet reflecting film of the present invention, the ultraviolet light of 254nm is 85% or more.Reflectivity it is preferred under
It is limited to 87%, more preferably 89%.
[transmissivities of 3. ultraviolet reflecting films]
When the transmission of ultraviolet rays of ultraviolet reflecting film is high, ultraviolet light is irradiated to the material of the neighborhood of ultraviolet reflecting film
On material (resin etc.), become the reason of making the material degradation, therefore preferably transmission of ultraviolet rays is low.The ultraviolet light of the present invention is anti-
Film is penetrated, because being the Al based alloys of film thickness 50nm or more, there is low transmission rate.
In the present specification, the transmissivity of so-called ultraviolet reflecting film is anti-using ultraviolet specrophotometer measure spectrum
The value for penetrating rate, be ultraviolet reflecting film transmitted intensity for reference mirror transmitted intensity ratio.As ultraviolet spectrometry
Photometer, for example, visible ultraviolet spectrophotometer " V-570 " (Japan Spectroscopy Corporation's system) can be enumerated.
The preferred upper limit of the transmission of ultraviolet rays of the ultraviolet reflecting film of the present invention is 0.1%.
[film thickness of 4. ultraviolet reflecting films]
In the present specification, the film thickness of so-called ultraviolet reflecting film is the value measured using contourgraph.As contourgraph,
For example, KLATencor societies system " Alpha-Step " can be enumerated.
The present invention ultraviolet reflecting film film thickness preferred lower limit be 50nm, more preferably 100nm, ultraviolet light it is anti-
The rate of penetrating can be better.Additionally, it is preferred that the upper limit be 2000nm, more preferably 1000nm, the reflectivity of ultraviolet light can be better.
[manufacturing methods of 5. ultraviolet reflecting films]
The ultraviolet reflecting film of the present invention can be manufactured by well known sputtering method, such as magnetron sputtering system.
The rare earth element or Cu of addition are used for when the energy spread on substrate is abundant, and the nucleating point of Al is reduced, and are made anti-
Penetrate rate reduction.Specifically, due to improving power when forming a film, or the distance due to reducing substrate and target, can cause to sputter grain
The energy of son increases, as a result, the roughness on surface increases, reflectivity reduces.Therefore, membrance casting condition can be according to using
Device is changed.
＜ sputtering targets ＞
[compositions of 1. sputtering targets]
The sputtering target of the present invention contains one or more kinds of rare earth elements：0.2at% or more and 3.0at% with
Under and Cu：Any one in 0.2at% or more and 6.0at% or less, surplus is made of Al and inevitable impurity, institute
The amount Y [at%] for stating the amount X [at%] and Cu of rare earth element meets following (2) formulas.
X+0.5Y ＜ 3.5 ... (2)
By using the sputtering target of the present invention, can form a film above-mentioned such ultraviolet reflecting film.
[manufacturing methods of 2. sputtering targets]
It as the manufacturing method of sputtering target, is not particularly limited, various methods can be applicable in, it may be desirable to application injection forming
Method.This is because, with the sputtering target that spray-up method manufactures, the excellent in uniformity of ingredient tissue, thus, it is possible to forming component groups
The uniform ultraviolet reflecting film knitted.
【Embodiment】
The film forming ＞ of ＜ ultraviolet reflecting films
The collar plate shape sputtering target of 4 inches of the diameter of composition described in embodiment 1 with table 1 is mounted on ULVAC societies system
After on the indoor electrode of DC magnetic controlled tube sputtering apparatus " CS-200 ", indoor pressure is adjusted to 3 × 10- 6Torr.It connects
It, by Ar gas (gas flows：19sccm) in introduction chamber room, the indoor pressure of chamber is adjusted to 2mTorr.Thereafter, in room temperature
Under, to the sputtering power of the additional 500W of sputtering target, on alkali-free glass plate (plate thickness 0.7mm, 4 inches of diameter), film forming has table 1
Embodiment 1 described in the ultraviolet reflecting film of film thickness 100nm that forms.
In the embodiment 1~19 and comparative example 1~9 of table 1, also with the above-mentioned ultraviolet light for being made like film thickness 100nm
Reflectance coating.
In the embodiment 20~23 of table 2, by changing film formation time, forming a film has the ultraviolet light of the film thickness described in table 2
Reflectance coating.
For obtained ultraviolet reflecting film, carries out composition analysis, albedo measurement and transmissivity in following methods and survey
Amount.During evaluation result is shown in tables 1 and 2.In addition, among element and numerical value described in table 1 and 2, meant with underscore de-
Regulation from the present invention.
＜ composition analysis ＞
By ICP luminescence analysis, the composition (at%) of ultraviolet reflecting film is calculated.
＜ albedo measurements ＞
Using Japan Spectroscopy Corporation's visible ultraviolet spectrophotometer " V-570 ", on alkali-free glass plate at
The ultraviolet reflecting film of film measures the spectral reflectivity of the range of 850~250nm.Press the purple for stating evaluation criterion judgement 254nm
The reflectivity of outside line.Zero and △ expression ultraviolet reflecting films are can realistic scale.In addition, as with reference to the purple for being worth display 375nm
The reflectivity of outside line.
[evaluation criterion]
○：87% or more
△：85% less than 87%
×：Less than 85%
＜ transmissivity measurements ＞
Using Japan Spectroscopy Corporation's visible ultraviolet spectrophotometer " V-570 ", on alkali-free glass plate at
The ultraviolet reflecting film of film measures the spectral-transmission favtor of the range of 850~250nm.The transmission of ultraviolet rays of 254n is shown in
In table 2.
【Table 2】
The ultraviolet reflecting film of whole embodiments 1~23, because containing one or more kinds of rare earth elements：
0.2at% or more and 3.0at% or less and Cu：0.2at% or more and 6.0at% it is below at least one, surplus is by Al and not
Evitable impurity is constituted, and meets above-mentioned (1) formula, it is believed that the roughness on surface is small, the ultraviolet light with wavelength 254nm
Reflectivity be 85% or more and excellent reflectivity.
In addition, the ultraviolet reflecting film of whole embodiments 20~23, the transmission of ultraviolet rays of 254nm down to less than
0.01%, the partition of ultraviolet light is excellent.
On the other hand, the ultraviolet reflecting film of comparative example 1 with Al because only formed a film, it is believed that the thick of surface cannot be obtained
Rugosity reduces effect, and the reflectivity of the ultraviolet light of wavelength 254nm is unsatisfactory for evaluation criterion down to 83.6%.
The ultraviolet reflecting film of comparative example 2~5, because by the element (In, Zn, Sn or Bi) other than Al and rare earth element
Film forming, it is believed that the roughness-reduction effect on surface cannot be obtained, the reflectivity of the ultraviolet light of wavelength 254nm down to 72.4~
84.2%, it is unsatisfactory for evaluation criterion.In, Zn or Sn separately included in the ultraviolet reflecting film of comparative example 2~4, it is believed that cannot
Reduce the roughness on surface, result thinks that the reflectivity of these ultraviolet reflecting films is low.In addition, the ultraviolet light of comparative example 5 is anti-
The Bi contained by film is penetrated, due to being precipitated on the surface of ultraviolet reflecting film, it is believed that the reflectivity of the reflectance coating is made to reduce.
The ultraviolet reflecting film of comparative example 6, by Al and rare earth element Nd film forming, but the content of Nd compares for 3.5at%
Specified amount is more, therefore the antiradar reflectivity of the Nd contained impacts the reflectivity of the ultraviolet reflecting film, the purple of wavelength 254nm
The reflectivity of outside line is unsatisfactory for evaluation criterion down to 84.9%.
The ultraviolet reflecting film of comparative example 7, by Al and rare earth element Nd film forming, but the content of Nd compares for 4.0at%
Specified amount is more, therefore the antiradar reflectivity of the Nd contained impacts the reflectivity of the ultraviolet reflecting film, wavelength 254nm's
The reflectivity of ultraviolet light is unsatisfactory for evaluation criterion down to 84.8%.
The ultraviolet reflecting film of comparative example 8 is formed a film by Al and Cu, but the content of Cu is more than specified amount for 7.0at%, because
The antiradar reflectivity of this Cu contained impacts the reflectivity of the ultraviolet reflecting film, the reflection of the ultraviolet light of wavelength 254nm
Rate is unsatisfactory for evaluation criterion down to 84.4%.
The ultraviolet reflecting film of comparative example 9 is formed a film by Al and rare earth element Nd and Cu, but because is unsatisfactory for above-mentioned formula
(1), so the antiradar reflectivity of the rare earth element Nd and Cu that contain impact the reflectivity of the ultraviolet reflecting film, wavelength
The reflectivity of the ultraviolet light of 254nm is unsatisfactory for evaluation criterion down to 84.9%.
The application is with the Japanese Patent Application for being on 2 5th, 2016 with the applying date, Patent the 2016-021086th
Based on the claim of priority applied.Patent the 2016-021086th by referring to and be incorporated into this specification.
Claims (5)
1. a kind of ultraviolet reflecting film, wherein contain one or more kinds of rare earth elements：0.2at% or more and
3.0at% or less and Cu：0.2at% or more and at least one of 6.0at% or less, surplus by Al and inevitably it is miscellaneous
Texture at,
Meet following (1) formulas,
X+0.5Y ＜ 3.5 ... (1)
Here, X is the amount of the rare earth element in terms of at%, Y is the amount of the Cu in terms of at%,
The reflectivity of the ultraviolet light of wavelength 254nm is 85% or more.
2. ultraviolet reflecting film according to claim 1, wherein the rare earth element be from Sc, Nd, Gd, La, Y,
More than one the element selected in the group that Ce, Pr and Dy are constituted.
3. ultraviolet reflecting film according to claim 1 or 2, wherein film thickness is 50nm or more and 2000nm or less.
4. a kind of sputtering target, wherein contain one or more kinds of rare earth elements：0.2at% or more and 3.0at% with
Under and Cu：0.2at% or more and at least one of 6.0at% or less, surplus are made of Al and inevitable impurity,
Meet following (2) formulas,
X+0.5Y ＜ 3.5 ... (2)
Here, X is the amount of the rare earth element in terms of at%, Y is the amount of the Cu in terms of at%.
5. sputtering target according to claim 4, wherein the rare earth element be from Sc, Nd, Gd, La, Y, Ce, Pr and
More than one the element selected in the group that Dy is constituted.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016021086A JP6647898B2 (en) | 2016-02-05 | 2016-02-05 | UV reflective film and sputtering target |
| JP2016-021086 | 2016-02-05 | ||
| PCT/JP2016/082071 WO2017134879A1 (en) | 2016-02-05 | 2016-10-28 | Uv reflective film and sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108431291A true CN108431291A (en) | 2018-08-21 |
Family
ID=59499568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680069937.1A Pending CN108431291A (en) | 2016-02-05 | 2016-10-28 | Ultraviolet reflecting film and sputtering target |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6647898B2 (en) |
| KR (1) | KR20180097697A (en) |
| CN (1) | CN108431291A (en) |
| TW (1) | TWI621716B (en) |
| WO (1) | WO2017134879A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019039051A (en) * | 2017-08-28 | 2019-03-14 | 株式会社コベルコ科研 | Al ALLOY THIN FILM ELECTRODE, LIGHT EMITTER AND SPUTTERING TARGET |
| CN109626500A (en) * | 2018-12-20 | 2019-04-16 | 余姚市荣大塑业有限公司 | A kind of drinking water sterilizing device and sterilization supervisory systems |
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| JP3940385B2 (en) * | 2002-12-19 | 2007-07-04 | 株式会社神戸製鋼所 | Display device and manufacturing method thereof |
| JP2007066417A (en) * | 2005-08-31 | 2007-03-15 | Mitsubishi Materials Corp | Aluminum alloy reflection film for optical recording medium having excellent corrosion resistance and surface smoothness and sputtering target for forming the reflection film |
| JP4912002B2 (en) * | 2006-03-16 | 2012-04-04 | 株式会社コベルコ科研 | Method for producing aluminum-based alloy preform and method for producing aluminum-based alloy dense body |
| JP2010204291A (en) * | 2009-03-02 | 2010-09-16 | Kobe Steel Ltd | Aluminum alloy reflection film, lighting fixture for automobile, illuminator, ornamental part and aluminum alloy sputtering target |
| JP2011021275A (en) | 2009-06-15 | 2011-02-03 | Kobe Steel Ltd | Reflective film of al alloy, stacked reflective film, automotive lighting device, lighting equipment, and sputtering target of al alloy |
| JP2012243742A (en) * | 2011-05-24 | 2012-12-10 | Kobe Steel Ltd | Wiring structure including organic el display reflective anode electrode |
| JP2015043468A (en) | 2014-12-02 | 2015-03-05 | パナソニック株式会社 | Ultraviolet semiconductor light-emitting element |
-
2016
- 2016-02-05 JP JP2016021086A patent/JP6647898B2/en not_active Expired - Fee Related
- 2016-10-28 KR KR1020187021150A patent/KR20180097697A/en not_active Application Discontinuation
- 2016-10-28 CN CN201680069937.1A patent/CN108431291A/en active Pending
- 2016-10-28 WO PCT/JP2016/082071 patent/WO2017134879A1/en active Application Filing
- 2016-12-06 TW TW105140188A patent/TWI621716B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1804110A (en) * | 2002-12-19 | 2006-07-19 | 株式会社神户制钢所 | Sputtering target |
| CN102369571A (en) * | 2009-04-14 | 2012-03-07 | 株式会社神户制钢所 | Optical information recording medium, and sputtering target for forming reflective film for optical information recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180097697A (en) | 2018-08-31 |
| JP6647898B2 (en) | 2020-02-14 |
| TW201728765A (en) | 2017-08-16 |
| TWI621716B (en) | 2018-04-21 |
| JP2017137549A (en) | 2017-08-10 |
| WO2017134879A1 (en) | 2017-08-10 |
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