CN108428803A - A kind of preparation method of thin-film packing structure, display device and thin-film packing structure - Google Patents
A kind of preparation method of thin-film packing structure, display device and thin-film packing structure Download PDFInfo
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- CN108428803A CN108428803A CN201810326776.0A CN201810326776A CN108428803A CN 108428803 A CN108428803 A CN 108428803A CN 201810326776 A CN201810326776 A CN 201810326776A CN 108428803 A CN108428803 A CN 108428803A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention provides a kind of thin-film packing structure, display device and thin-film packing structure preparation methods.Wherein, the thin-film packing structure includes：First substrate；The encapsulated layer of covering on the first substrate；Wherein, encapsulated layer includes：The first insulating layer, flatness layer and the second insulating layer being stacked；First insulating layer is arranged close to first substrate, and the first insulating layer is in porous structure in the side towards flatness layer, and flatness layer is covered on the first insulating layer and is filled in the porous structure of the first insulating layer, and second insulating layer is covered on flatness layer.The thin-film packing structure provided through the embodiment of the present invention, the organic material filled in porous structure can absorb stress, avoid insulating layer stress excessive and bending fracture occurs, the reliability and bendability of the flexible base board can be improved.The flatness layer of covering on the first insulating layer can play the function of planarization.
Description
Technical field
The present invention relates to TFT-LCD technical fields, more particularly to a kind of thin-film packing structure, display device and film
The preparation method of encapsulating structure
Background technology
Currently, flexible display apparatus has the characteristics that rollable, wide viewing angle and easy to carry, applied in portable product field
Extensively.
But the insulating layer of flexible display apparatus is typically by silicon nitride, silica and silicon oxynitride etc. in the prior art
Inorganic material is made.And these inorganic material poor toughness, insulation fault rupture is easily caused when flexible product is bent, and then influence soft
Property display device on thin film transistor (TFT) and the device damages such as storage capacitance, to being caused on the yield and reliability of product greatly
It influences.
Invention content
The present invention provide a kind of thin-film packing structure, display device and thin-film packing structure preparation method, to solve
Existing flexible product is in bending the problem of insulating layer easy fracture.
To solve the above-mentioned problems, the invention discloses thin-film packing structures, including：
First substrate；
The encapsulated layer being covered on the first substrate；Wherein, the encapsulated layer includes：The first insulation being stacked
Layer, flatness layer and second insulating layer；First insulating layer is arranged close to the first substrate, and first insulating layer is in direction
The side of the flatness layer is in porous structure, and the flatness layer is covered on first insulating layer and is filled in described first absolutely
In the porous structure of edge layer, the second insulating layer is covered on the flatness layer.
Preferably, the material of first insulating layer is silicon nitride or silica or silicon oxynitride.
Preferably, the material of the flatness layer is organic material.
Preferably, the flatness layer is polypropyleneimine or polyimides.
Preferably, the aperture of the porous structure is 2 μm -8 μm.
Preferably, the thickness of the flatness layer is 1 μm -4 μm.
To solve the above-mentioned problems, the invention also discloses a kind of preparation method of thin-film packing structure, the method packets
It includes：
First substrate is provided；
On the first substrate, the first insulating layer is formed；
Patterned process is carried out to first insulating layer and forms porous structure；
Flatness layer is formed on first insulating layer, the flatness layer is filled in the porous structure；
Second insulating layer is formed on the flatness layer.
Preferably, flatness layer is formed on first insulating layer, including：
The spin-on organic materials on first insulating layer, form the flatness layer, and the organic material is filled in described
In porous structure, and it is covered on first insulating layer.
Preferably, described to form second insulating layer on the flatness layer, including：
Using PECVD second insulating layer is formed on the flatness layer.
To solve the above-mentioned problems, the invention also discloses a kind of display devices, including such as any one of claim 1-6 institutes
The thin-film packing structure stated.
Compared with prior art, the present invention includes following advantages：
The thin-film packing structure provided through the embodiment of the present invention, thin-film packing structure are made of multilayer dielectric layer, wherein
One layer insulating forms porous structure, organic material is filled in porous structure, the organic material of filling can absorb stress, keep away
Exempt from insulating layer stress it is excessive and occur bending fracture, the reliability and bendability of the flexible base board can be improved.
Further, the function of planarization can be played by covering flatness layer on the first insulating layer.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of thin-film packing structure of the embodiment of the present invention one；
Fig. 2 is a kind of step flow chart of the preparation method for the thin film transistor (TFT) for showing the embodiment of the present invention two；
Fig. 3 be the embodiment of the present invention two the first insulating layer of formation on the first substrate after schematic diagram；
Fig. 4 is the schematic diagram after being covered with flatness layer on the first insulating layer of the embodiment of the present invention two.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
Embodiment one
Referring to Fig.1, a kind of structural schematic diagram of thin-film packing structure of the embodiment of the present invention one is shown.
As described in Figure 1, which includes：First substrate 110, the encapsulated layer being covered on first substrate 110
120, wherein encapsulated layer 120 includes：The first insulating layer 121, flatness layer 122 and the second insulating layer 123 being stacked；First
Insulating layer 121 close to first substrate 110 be arranged, the first insulating layer 121 towards the side of flatness layer 122 be in porous structure, it is flat
Layer 122 is covered on the first insulating layer 121 and is filled in the porous structure of the first insulating layer 121, and, second insulating layer 123
It is covered on flatness layer 122.
In embodiments of the present invention, first substrate is the flexible base board that can be shown, specifically, first substrate 110 includes：
Substrate, buffer layer, active layer, gate insulating layer, grid layer, inner dielectric layer, source/drain, pixel electrode layer, pixel protection are exhausted
Edge layer, organic luminous layer, doped region etc..
In embodiments of the present invention, the material of the first insulating layer 121 is silicon nitride or silica or silicon oxynitride.Wherein,
These materials have higher cold-and-heat resistent impact and hardness, can be good at protective film structure as encapsulating material.
In embodiments of the present invention, there is porous structure in the side of the first insulating layer 121, wherein the hole of porous structure
Diameter is 2 μm -8 μm, and depth can be adjusted according to the thickness of the first insulating layer 121, can run through the first insulating layer 121.Porous structure is kept away
The luminous position for opening first substrate 110 is evenly distributed on the first insulating layer 121.Specifically, the quantity of porous structure according to
The size of first insulating layer 121 determines.
In embodiments of the present invention, the material of flatness layer 122 be organic material, specifically, can be polypropyleneimine or
Polyimides.Flatness layer 122 is filled in the porous structure of the first insulating layer 121, and is covered on the first insulating layer 121, is covered
Cover the flatness layer 122 of the first insulating layer 121 thickness be 1 μm -4 μm.Wherein, flatness layer 122 also functions to the effect of planarization.
In embodiments of the present invention, second insulating layer 123 is covered on flatness layer 122, and the material of second insulating layer 123
Material is also silicon nitride or silica or silicon oxynitride, can be can also be different with the material identical of the first insulating layer 121, the present invention
This is not limited.
The thin-film packing structure provided through the embodiment of the present invention, thin-film packing structure are made of multilayer dielectric layer, wherein
One layer insulating forms porous structure, organic material is filled in porous structure, the organic material of filling can absorb stress, keep away
Exempt from insulating layer stress it is excessive and occur bending fracture, the reliability and bendability of the flexible base board can be improved.
Further, the function of planarization can be played by covering flatness layer on the first insulating layer.
Embodiment two
With reference to Fig. 2, a kind of step flow chart of the preparation method of thin-film packing structure of the embodiment of the present invention two is shown.
The preparation method of the array substrate of the embodiment of the present invention includes the following steps：
Step 201：First substrate is provided.
In embodiments of the present invention, first substrate 110 is the flexible base board structure made with traditional handicraft.The flexible base board
Structure includes：Substrate, buffer layer, active layer, gate insulating layer, grid layer, inner dielectric layer, source/drain, pixel electrode layer,
Pixel protects insulating layer, organic luminous layer, doped region etc..
Step 202：On the first substrate, the first insulating layer is formed.
Such as Fig. 3, the first insulating layer 121 is formed on first substrate 110, specifically, using PECVD methods in first substrate
Deposited silicon nitride (SiN on 110x) layer.Wherein, the first insulating layer 110 can also be silica (SiOx) layer or silicon oxynitride
(SiNxOX) layer.
Step 203：Patterned process is carried out to first insulating layer and forms porous structure.
Such as Fig. 3, chemical wet etching process is carried out to the first insulating layer 121, porous structure 1211 is formed in side.Wherein, more
The aperture of pore structure is 2 μm -8 μm, and depth can be adjusted according to the thickness of the first insulating layer 121, can run through the first insulating layer 121.
Porous structure avoids the luminous position of first substrate 110, is evenly distributed on the first insulating layer 121.Specifically, porous structure
Quantity according to the size of the first insulating layer 121 determine.
Step 204：Flatness layer is formed on first insulating layer, the flatness layer is filled in the porous structure.
As Fig. 4 forms flatness layer on first insulating layer in embodiments of the present invention, including：Absolutely described first
Spin-on organic materials in edge layer form the flatness layer, and the organic material is filled in the porous structure, and is covered in institute
It states on the first insulating layer.
The material of flatness layer 122 is organic material, is filled in the porous structure of the first insulating layer 121 in the method for spin coating
Organic material, and be covered on the first insulating layer 121.The organic material filled in porous structure can absorb stress, avoid
Insulating layer stress is excessive and bending fracture occurs, and the reliability and bendability of the flexible base board can be improved.It is covered in the first insulation
Flatness layer on layer can play the function of planarization.
Step 205：Second insulating layer is formed on the flatness layer.
In embodiments of the present invention, such as Fig. 1, second insulating layer is formed on the flatness layer using PECVD.Second absolutely
The material of edge layer 123 is also silicon nitride or silica or silicon oxynitride, can also with the material identical of the first insulating layer 121
Difference, the present invention do not limit this.
The preparation method of the thin-film packing structure provided through the embodiment of the present invention, in first substrate provided by the invention
On, the first insulating layer is formed, porous structure is formed in the first insulating layer side by patterned process.In the hole of porous structure
Organic material is filled, the organic material of filling can absorb stress, avoid insulating layer stress excessive and bending fracture occurs, can carry
The reliability and bendability of the high flexible base board.
Further, the function of planarization can be played by covering flatness layer on the first insulating layer.
Embodiment three
The embodiment of the invention also discloses a kind of display device, including thin-film packing structure, which includes：
First substrate；The encapsulated layer of covering on the first substrate；Wherein, encapsulated layer includes：The first insulating layer, the flatness layer being stacked
And second insulating layer；First insulating layer is arranged close to first substrate, and the first insulating layer is in porous knot in the side towards flatness layer
Structure, flatness layer are covered on the first insulating layer and are filled in the porous structure of the first insulating layer, and second insulating layer is covered in flat
On smooth layer.
In a kind of preferred embodiment of the embodiment of the present invention, the material of the first insulating layer be silicon nitride or silica or
Silicon oxynitride；The material of flatness layer is organic material.Flatness layer is polypropyleneimine or polyimides.
In a kind of preferred embodiment of the embodiment of the present invention, the aperture of porous structure is 2 μm -8 μm.The thickness of flatness layer
It is 1 μm -4 μm.
For each method embodiment above-mentioned, for simple description, therefore it is all expressed as a series of combination of actions, but
Be those skilled in the art should understand that, the present invention is not limited by the described action sequence because according to the present invention, certain
A little steps can be performed in other orders or simultaneously.Secondly, it those skilled in the art should also know that, is retouched in specification
The embodiment stated belongs to preferred embodiment, and involved action and module are not necessarily essential to the invention.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with
The difference of other embodiment, the same or similar parts between the embodiments can be referred to each other.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that process, method, commodity or equipment including a series of elements include not only that
A little elements, but also include other elements that are not explicitly listed, or further include for this process, method, commodity or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in process, method, commodity or the equipment including the element.
Above to the preparation side of a kind of thin-film packing structure provided by the present invention, display device and thin-film packing structure
Method is described in detail, and principle and implementation of the present invention are described for specific case used herein, above
The explanation of embodiment is merely used to help understand the method and its core concept of the present invention；Meanwhile for the general skill of this field
Art personnel, according to the thought of the present invention, there will be changes in the specific implementation manner and application range, in conclusion this
Description should not be construed as limiting the invention.
Claims (10)
1. a kind of thin-film packing structure, which is characterized in that including：
First substrate；
The encapsulated layer being covered on the first substrate；Wherein, the encapsulated layer includes：It is the first insulating layer for being stacked, flat
Smooth layer and second insulating layer；First insulating layer is arranged close to the first substrate, and first insulating layer is described in
The side of flatness layer is in porous structure, and the flatness layer is covered on first insulating layer and is filled in first insulating layer
Porous structure in, the second insulating layer is covered on the flatness layer.
2. thin-film packing structure according to claim 1, which is characterized in that the material of first insulating layer is silicon nitride
Or silica or silicon oxynitride.
3. thin-film packing structure according to claim 1, which is characterized in that the material of the flatness layer is organic material.
4. thin-film packing structure according to claim 1, which is characterized in that the flatness layer is polypropyleneimine or polyamides
Imines.
5. the aperture of thin-film packing structure according to claim 1, the porous structure is 2 μm -8 μm.
6. the thickness of thin-film packing structure according to claim 1, the flatness layer is 1 μm -4 μm.
7. a kind of preparation method of thin-film packing structure, which is characterized in that the method includes：
First substrate is provided；
On the first substrate, the first insulating layer is formed；
Patterned process is carried out to first insulating layer and forms porous structure；
Flatness layer is formed on first insulating layer, the flatness layer is filled in the porous structure；
Second insulating layer is formed on the flatness layer.
8. the method according to the description of claim 7 is characterized in that form flatness layer on first insulating layer, including：
The spin-on organic materials on first insulating layer, form the flatness layer, and the organic material is filled in described porous
In structure, and it is covered on first insulating layer.
9. the method according to the description of claim 7 is characterized in that described form second insulating layer, packet on the flatness layer
It includes：
Using PECVD second insulating layer is formed on the flatness layer.
10. a kind of display equipment, which is characterized in that including thin-film packing structure as claimed in any one of claims 1 to 6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810326776.0A CN108428803A (en) | 2018-04-12 | 2018-04-12 | A kind of preparation method of thin-film packing structure, display device and thin-film packing structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810326776.0A CN108428803A (en) | 2018-04-12 | 2018-04-12 | A kind of preparation method of thin-film packing structure, display device and thin-film packing structure |
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|---|---|---|---|---|
| US20140254112A1 (en) * | 2013-03-01 | 2014-09-11 | Panasonic Corporation | Multi-layered film, electronic device, and manufacturing methods thereof |
| CN104124258A (en) * | 2013-04-25 | 2014-10-29 | 三星显示有限公司 | Display apparatus |
| CN104521323A (en) * | 2012-09-04 | 2015-04-15 | 夏普株式会社 | Organic electroluminescent display, and production method therefor |
| CN104795403A (en) * | 2015-04-16 | 2015-07-22 | 京东方科技集团股份有限公司 | Flexible substrate, manufacturing method thereof and display device |
-
2018
- 2018-04-12 CN CN201810326776.0A patent/CN108428803A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104521323A (en) * | 2012-09-04 | 2015-04-15 | 夏普株式会社 | Organic electroluminescent display, and production method therefor |
| US20140254112A1 (en) * | 2013-03-01 | 2014-09-11 | Panasonic Corporation | Multi-layered film, electronic device, and manufacturing methods thereof |
| CN104124258A (en) * | 2013-04-25 | 2014-10-29 | 三星显示有限公司 | Display apparatus |
| CN104795403A (en) * | 2015-04-16 | 2015-07-22 | 京东方科技集团股份有限公司 | Flexible substrate, manufacturing method thereof and display device |
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Application publication date: 20180821 |
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| RJ01 | Rejection of invention patent application after publication |