CN108423670A - The surface modification method of graphene - Google Patents
The surface modification method of graphene Download PDFInfo
- Publication number
- CN108423670A CN108423670A CN201810276330.1A CN201810276330A CN108423670A CN 108423670 A CN108423670 A CN 108423670A CN 201810276330 A CN201810276330 A CN 201810276330A CN 108423670 A CN108423670 A CN 108423670A
- Authority
- CN
- China
- Prior art keywords
- graphene
- substrate
- surface modification
- high energy
- modification method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
Abstract
The present invention relates to a kind of surface modification methods of graphene.The surface modification method of above-mentioned graphene, by the way that graphene and high molecular polymer are placed in progress high energy ultraviolet light processing under high energy UV, and the irradiation power of high energy UV is set as 15mW~35mW, the monochromatic narrow band light that high energy UV is 150nm~350nm as illumination wavelength lambda is set, so that high molecular polymer can be grafted to the surface of graphene；The surface modification method of above-mentioned graphene, it can realize the surface treatment to graphene, and graphene dispersion need not be avoided to the injury that human body and environment are caused using toxic reagent in a solvent, simultaneously, the above method need to only carry out the surface modification that graphene can be completed in high energy ultraviolet light processing 20min~50min, reaction time is short, and low energy consumption and efficient.
Description
Technical field
The present invention relates to technical field of nano material, more particularly to the surface modification method of graphene.
Background technology
Graphene is by single layer of carbon atom with sp2The mode of hydridization is formed by connecting novel with bi-dimensional cellular shape structure
Nano material, graphene have many advantages, such as that large specific surface area, light transmittance are high, carrier mobility is high and is widely used.And it is right
Highly important effect is also functioned in the application of graphene in the surface modification of graphene, is carried out at present on the surface of graphene
The method of modification mainly need graphene dispersion in a solvent, by Strong oxdiative reaction on the surface of graphene introducing-OH ,-
COOH or epoxy group, later by carrying out further reaction to these groups to realize the surface modification of graphene.
However the surface treatment method of currently used graphene needs to use a large amount of organic solvent so that cost increases
Height also can bring injury to human body or environment, and reaction efficiency is relatively low, therefore, study a kind of surface treatment of new graphene
Method is extremely important.
Invention content
Based on this, it is necessary at present to the surface treatment method of current graphene need using organic solvent to human body
Problem low with environmental pollution and reaction efficiency, processing cost is high provides a kind of surface modification method of graphene.
A kind of surface modification method of graphene, includes the following steps：
Graphene is deposited in the first substrate；
High molecular polymer is deposited in the second substrate, the high molecular polymer is selected from carbochain high polymer；
First substrate and second substrate are positioned in same reaction chamber；And
Under protective gas atmosphere, high energy ultraviolet light processing, institute are carried out to first substrate and second substrate
The irradiation power for stating high energy UV is 15mW~35mW, and the high energy UV is that illumination wavelength lambda is 150nm~350nm's
Monochromatic narrow band light.
It is described to be specifically included the step of depositing graphene in the first substrate in a wherein embodiment：
Under protective gas atmosphere, the first substrate is warming up to 550 DEG C~900 DEG C, keeps the pressure of reaction system to be
Standard atmospheric pressure；
Hydrogen and methane gas are passed through into reaction system, the throughput of the hydrogen is 5sccm~15sccm, the first
The throughput of alkane gas is 800sccm~1000sccm；And
Stop being passed through hydrogen and methane gas into reaction system, and slow cooling to room temperature obtains graphene.
In a wherein embodiment, the deposition thickness of the graphene is 0.1nm~1.8nm.
In a wherein embodiment, the carbochain high polymer is selected from polystyrene, polymethyl methacrylate, poly-vinegar
At least one of sour ethylene, polyethylene and polypropylene.
In a wherein embodiment, the thickness of the high molecular polymer deposited in second substrate be 4mm~
6mm。
In a wherein embodiment, first substrate is copper sheet；
And/or second substrate is silicon chip, nickel sheet or copper sheet.
In a wherein embodiment, first substrate is positioned over same level, and institute with second substrate
Stating the first substrate, there is the first working face, second substrate to have the second working face, stone is formed on first working face
Black alkene layer, forms macromolecule layer on second working face, and the graphene layer is formed in the horizontal direction with macromolecule layer
Gap no more than 0.8mm.
In a wherein embodiment, the illumination wavelength lambda of the high energy UV is calculated by the following formula：
λ1=Nhc/ δ1, λ2=Nhc/ δ2；
λ≤min{λ1, λ2}；
Wherein, N is Avgadro constant, and h is Planck's constant, and c is wavelength；δ1For the key of C=C keys in graphene
Can, λ1Ultraviolet light wavelength when so that C=C keys are broken in graphene；δ2For C-C keys or C=C in high molecular polymer
The bond energy of key, λ2Ultraviolet light wavelength when so that C-C keys or C=C keys are broken in high molecular polymer.
In a wherein embodiment, high energy ultraviolet light processing is carried out to first substrate and second substrate
When, the distance of the first substrate and second substrate described in high energy UV light source distance is 2mm~20mm.
It is described under protective gas atmosphere in a wherein embodiment, to first substrate and described second
Substrate further includes step after carrying out the step of high energy ultraviolet light processing：First substrate is positioned over protective gas atmosphere
Lower natural cooling.
The surface modification method of above-mentioned graphene, by by graphene and high molecular polymer be placed under high energy UV into
Row high energy ultraviolet light processing, and the irradiation power for setting high energy UV sets high energy UV as irradiation as 15mW~35mW
Wavelength X is the monochromatic narrow band light of 150nm~350nm, so that high molecular polymer can be grafted to the surface of graphene；On
The surface modification method of graphene is stated, can realize the surface modification to graphene, and need not be by graphene dispersion in solvent
In avoid the injury that human body and environment are caused using toxic reagent, meanwhile, the above method need to only carry out at high energy UV
The surface modification of graphene can be completed in reason 20min~50min, and the reaction time is short, and low energy consumption and efficient.
Description of the drawings
Fig. 1 is the process flow chart of the surface modification method of the graphene of an embodiment；
Fig. 2 is the graphene (a) without high energy ultraviolet light processing and the graphite Jing Guo high energy ultraviolet light processing in embodiment 1
The XPS spectrum figure of alkene (b)；
Fig. 3 is the XPS spectrum figure of the graphene of non-surface modification；
Fig. 4 is the XPS spectrum figure of polymethyl methacrylate；
Fig. 5 is the XPS spectrum figure of the sample after being surface modified to graphene in embodiment 3.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, With reference to embodiment
And attached drawing is described in detail technical scheme of the present invention.Many details are elaborated in the following description in order to fill
The sub-argument solution present invention.But the invention can be embodied in many other ways as described herein, people in the art
Member can do similar improvement without violating the connotation of the present invention, therefore the present invention is not by following public specific implementation
Limitation.
Referring to Fig. 1, the surface modification method of the graphene of an embodiment, includes the following steps：
S110, graphene is deposited in the first substrate.
In a wherein embodiment, the first substrate is copper sheet.The main function of first substrate is carrying graphene,
And copper sheet is good for the stability of graphene, will not react with graphene.In a wherein embodiment, the first substrate
Size be 2inch, certainly, in other embodiments, the first substrate may not be sheet, and the size of the first substrate also may be used
To be any other size.
In a wherein embodiment, the method that graphene is deposited in the first substrate specifically includes following steps：
S111, under protective gas atmosphere, the first substrate is warming up to 550 DEG C~900 DEG C.
In a wherein embodiment, protective gas is selected from least one of nitrogen, helium and argon gas.
In a wherein embodiment, the first substrate is positioned in the reacting furnace of chemical vapor deposition, and to reaction
Protective gas is passed through in stove until emptying the air in reacting furnace.
In a wherein embodiment, the temperature of reacting furnace is increased with the heating rate of 20 DEG C/min~30 DEG C/min
To 550 DEG C~900 DEG C.
In a wherein embodiment, protective gas is continually fed into reaction system to ensure the pressure of reaction system
It is standard atmospheric pressure by force.
S112, hydrogen and methane gas are passed through into reaction system.
In a wherein embodiment, the throughput that hydrogen is passed through into reaction system is 5sccm~15sccm, to anti-
It is 800sccm~1000sccm to answer and be passed through the throughput of methane gas in system.
In a wherein embodiment, time that hydrogen and methane gas are passed through into reaction system be 30min~
60min。
S113, stop being passed through hydrogen and methane gas into reaction system, and slow cooling to room temperature obtains graphene.
In a wherein embodiment, stop continuing to reactant after being passed through hydrogen and methane gas into reaction system
Protective gas is passed through in system to keep the pressure of reaction system as standard atmospheric pressure.
In a wherein embodiment, with the rate of temperature fall slow cooling of 10 DEG C/min~20 DEG C/min to room temperature, from
And obtain the first substrate that graphene sheet layer is covered with to surface.
In a wherein embodiment, the graphene layer deposited in the first substrate, the deposition of thick of graphene layer
Degree is 0.1nm~1.8nm.Further, the specific surface area of the graphene obtained is 736.6m2/ g~1520m2/g。
In a wherein embodiment, there is the first substrate the first working face, graphene layer the first work is completely covered
Face.It is understood that graphene layer can also be partly covered on the first working face.
S120, high molecular polymer is deposited in the second substrate.
In a wherein embodiment, high molecular polymer is selected from carbochain high polymer.Further, carbochain high polymer selects
At least one of self-polystyrene, polymethyl methacrylate, polyvinyl acetate, polyethylene and polypropylene.Further,
The one kind of carbochain high polymer in polystyrene and polymethyl methacrylate.Certainly, for the selection of carbochain high polymer by
The performance for improving graphene is needed to determine in practical application, for example, carbochain high polymer is conducive to improve stone when being selected from polystyrene
The rigidity of black alkene, and carbochain high polymer be selected from polymethyl methacrylate when, be conducive to improve graphene impact resistance and
Weatherability.
In a wherein embodiment, the second substrate is silicon chip, nickel sheet or copper sheet.The main function of second substrate is
To carrying high molecular polymer, and the stability of silicon chip, nickel sheet and copper sheet is good, will not react with high molecular polymer.
In one of embodiment, the size of the second substrate is 50mm*50mm, certainly, in other embodiments, the second substrate
Size can also be any other size.
In a wherein embodiment, the method that high molecular polymer is deposited in the second substrate may be used second
The mode of high molecular polymer film is formed in substrate, certainly, in other embodiments, can also use shearing polyphosphazene polymer
It closes object material and is placed in the mode in the second substrate again.
In a wherein embodiment, deposition obtains macromolecule layer in the second substrate, and the thickness of macromolecule layer is 4mm
~6mm.
In a wherein embodiment, there is the second substrate the second working face, macromolecule layer the second work is completely covered
Face.
S130, the first substrate and the second substrate are positioned over same reaction chamber.
It is in a wherein embodiment, the first substrate and the second substrate is placed side by side in reaction chamber.Further,
Reaction chamber can be closed, and reaction chamber has an air inlet and a gas outlet.High energy ultraviolet optical assembly is equipped in reaction chamber, it can
High energy ultraviolet light processing is carried out to reaction chamber.
In a wherein embodiment, by the first substrate and the second substrate graphite placed side by side made in the first substrate
High molecular polymer on alkene layer and the second substrate is at same level.
Further, graphene layer forms the gap no more than 0.8mm with macromolecule layer in the horizontal direction.Preferably,
Graphene layer is in direct contact with macromolecule layer.
S140, under protective gas atmosphere, high energy ultraviolet light processing is carried out to the first substrate and the second substrate.
In a wherein embodiment, the air inlet of capping chamber and gas outlet first, and reaction chamber is taken out
It is vacuum-treated, the air pressure in reaction chamber is made to be down to 10-2Torr or less, it is preferred that make air pressure drop in reaction chamber down to 10- 6Torr or less；Secondly, it then by air inlet is passed through protective gas into reaction chamber until reaching normal atmosphere (An), opens out
Gas port, it is not open close enter protective gas keep system pressure.
Further, the flow velocity that protective gas is passed through into reaction chamber is 2L/min~3L/min.Further, it protects
Property gas be selected from least one of nitrogen, argon gas and helium.
In a wherein embodiment, high energy ultraviolet when to the first substrate and the progress high energy ultraviolet light processing of the second substrate
The irradiation power of light is 15mW~35mW.Under this irradiation power, the main chain of carbochain high polymer is opened to form the general of monomer
Rate highest, the probability that relatively carbochain high polymer occurs light degradation reaction and forms other by-products is minimum, meanwhile, in this power
Under (dangling bond) and the monomer of carbochain high polymer is made to be grafted on dangling bonds to making graphene surface generate dangling bonds
Maximum probability.
In a wherein embodiment, high energy UV is the monochrome that illumination wavelength lambda is 150nm~350nm
(monochromatic) narrow band light；The full width at half maximum (FWHM) of high energy UV is 14nm~18nm.
Further, the illumination wavelength lambda of high energy UV is calculated by the following formula：
λ1=Nhc/ δ1, λ2=Nhc/ δ2；
λ≤min{λ1, λ2}；
Wherein, N is Avgadro constant, and h is Planck's constant, and c is wavelength；δ1For the key of C=C keys in graphene
Can, λ1Ultraviolet light wavelength when so that C=C keys are broken in graphene；δ2For C-C keys or C=C in high molecular polymer
The bond energy of key, λ2Ultraviolet light wavelength when so that C-C keys or C=C keys are broken in high molecular polymer.
Further, it should be noted that δ2For the bond energy of C-C keys or C=C keys on main chain in high molecular polymer.
When carrying out high energy ultraviolet light processing, the backbone breaking of high molecular polymer is simultaneously grafted on graphene again.
It is understood that the illumination wavelength of ultraviolet light is smaller, photon energy caused by ultraviolet light is bigger, and λ1To incite somebody to action
The maximum wavelength that C=C keys are opened in graphene, λ2To make C-C keys or the maximum wave of C=C keys opening in high molecular polymer
It is long, as illumination wavelength lambda≤min { λ of high energy UV1, λ2When, enable to high molecular polymer to be grafted on graphene.
Further, in one preferably embodiment, illumination wavelength lambda=min { λ of high energy UV1, λ2, in this way,
Be conducive to reduce high energy UV in the case where ensureing that high molecular polymer can be grafted to graphene to high molecular polymer
And the destruction of graphene-structured.
In a wherein embodiment, high energy ultraviolet source apart from the distance of graphene layer and macromolecule layer be 2mm~
20mm。
In a wherein embodiment, the time for carrying out high energy ultraviolet light processing is 20min~50min.
S150, the first substrate is positioned over natural cooling under protective gas atmosphere.
In a wherein embodiment, protective gas is selected from least one of nitrogen, argon gas and helium.By first
Substrate, which is positioned over progress natural cooling under protective gas atmosphere, can prevent graphene exposure from being aoxidized in air.
The surface modification method of above-mentioned graphene, by by graphene and high molecular polymer be placed under high energy UV into
Row high energy ultraviolet light processing, and the irradiation power for setting high energy UV sets the irradiation of high energy UV as 15mW~35mW
Wavelength X is 150nm~350nm, so that high molecular polymer can be grafted to the surface of graphene；The table of above-mentioned graphene
Surface modification method can realize the surface modification to graphene, and graphene dispersion need not in a solvent be avoided to use
Toxic reagent and the injury for causing human body and environment, meanwhile, the above method need to only carry out high energy ultraviolet light processing 20min~
The surface modification of graphene can be completed in 50min, and the reaction time is short, and low energy consumption and efficient.
In addition, the surface modification method of above-mentioned graphene, is not required to disperse graphene, avoid to graphene stratiform
Structural damage, and using high molecular polymer as raw material, easy to operation and reaction control, and can be directly by polyphosphazene polymer
Object modification is closed to the surface of graphene, multi-time modification and processing is not needed, reduces reaction process, is conducive to improve reaction efficiency simultaneously
Reduce synthesis cost.
It should be noted that in other embodiments, step S150 can also be omitted.
It is the explanation of specific embodiment below, following embodiment unless otherwise specified, is not then contained except inevitably miscellaneous
The component pointed out is not known in other other than matter.
Embodiment 1
The first several substrates is chosen, the first substrate is positioned in the reacting furnace of chemical vapor deposition, and to reacting furnace
In be passed through nitrogen until emptying the air in reacting furnace, then the temperature of reacting furnace is increased to the heating rate of 20 DEG C/min
550 DEG C, and it is standard atmospheric pressure to keep the pressure in reacting furnace；Hydrogen and methane gas are passed through into reaction system again, is passed through
The throughput of hydrogen is 5sccm, and the throughput for being passed through methane gas is 800sccm, be continually fed into hydrogen and methane gas when
Between be 30min；First for stopping ventilation, and being cooled to that room temperature must arrive that surface is covered with graphene with the rate of temperature fall of 10 DEG C/min
Substrate.
The first substrate for being wherein covered with graphene is taken, is positioned in high energy UV reaction chamber and is handled, reaction chamber
Under nitrogen atmosphere, the irradiation power for carrying out high energy UV when high energy ultraviolet light processing is 20mW, and high energy UV is to shine
The monochromatic narrow band light that wavelength X is 256nm is penetrated, the time handled is 20min, by the first base after high energy ultraviolet light processing
Bottom is exposed in air, obtains the graphene by high energy ultraviolet light processing.
To the graphene without high energy ultraviolet light processing in embodiment 1 and the graphene difference Jing Guo high energy ultraviolet light processing
XPS spectrum test is carried out, the XPS spectrum figure of the two is as shown in Fig. 2, and by XPS spectrum figure to graphene surface C1s and O1s
Atomicity percentage composition carries out counting as shown in table 1.
Table 1
| C1s | O1s | |
| Graphene without high energy ultraviolet light processing | 72.56%At. | 27.44%At. |
| By the graphene of high energy ultraviolet light processing | 36.42%At. | 63.58%At. |
It can be seen from the data in Table 1 that big by the content of the oxygen element of high energy UV treated graphene surface
Width rises, and illustrates that the C=C double bonds of graphene surface is enabled to open to generate dangling bonds in the case where high energy UV irradiates,
When graphene to be positioned in air again, dangling bonds is combined with the oxygen in air, so as to cause the increase of oxygen content.Cause
This enables to graphene to activate and carries out subsequent graft reaction under the conditions of above-mentioned high energy UV.
Embodiment 2
One piece of first substrate is taken, the first substrate is positioned in the reacting furnace of chemical vapor deposition, and is led into reacting furnace
Enter nitrogen up to the air in emptying reacting furnace, then the temperature of reacting furnace be increased to 900 DEG C with the heating rate of 30 DEG C/min,
And it is standard atmospheric pressure to keep the pressure in reacting furnace；Hydrogen and methane gas are passed through into reaction system again, is passed through hydrogen
Throughput is 15sccm, and the throughput for being passed through methane gas is 1000sccm, and the time for being continually fed into hydrogen and methane gas is
60min；Stop ventilation, and be cooled to room temperature with the rate of temperature fall of 10 DEG C/min to arrive the first base that surface is covered with graphene
The thickness at bottom, graphene is 1.8nm.One piece of second substrate is taken, it is 4mm polystyrene layers that thickness is formed in the second substrate.
First substrate and the second substrate is placed side by side in reaction chamber, and the first substrate is placed in same level with the second substrate
On face, and the first substrate is contacted with the second substrate, and reaction chamber is evacuated to air pressure and is down to 10-2It is being passed through nitrogen after Torr, is being kept
The flow velocity of nitrogen is 2L/min, and high energy ultraviolet light processing, the irradiation work(of high energy UV are carried out to the first substrate and the second substrate
Rate is 20mW, and high energy UV is the monochromatic narrow band light that illumination wavelength lambda is 218nm, irradiation time 25min；It is purple to close high energy
First substrate is exposed to nitrogen atmosphere down toward natural cooling by outer optical assembly.
Embodiment 3
One piece of first substrate is taken, the first substrate is positioned in the reacting furnace of chemical vapor deposition, and is led into reacting furnace
Enter nitrogen up to the air in emptying reacting furnace, then the temperature of reacting furnace be increased to 900 DEG C with the heating rate of 30 DEG C/min,
And it is standard atmospheric pressure to keep the pressure in reacting furnace；Hydrogen and methane gas are passed through into reaction system again, is passed through hydrogen
Throughput is 10sccm, and the throughput for being passed through methane gas is 900sccm, and the time for being continually fed into hydrogen and methane gas is
60min；Stop ventilation, and be cooled to room temperature with the rate of temperature fall of 10 DEG C/min to arrive the first base that surface is covered with graphene
The thickness at bottom, graphene is 1.8nm；One piece of second substrate is taken, it is 6mm poly-methyl methacrylates that thickness is formed in the second substrate
Ester layer.
First substrate and the second substrate is placed side by side in reaction chamber, and the first substrate is placed in same level with the second substrate
On face, and the first substrate is contacted with the second substrate, and reaction chamber is evacuated to air pressure and is down to 10-6It is being passed through nitrogen after Torr, is being kept
The flow velocity of nitrogen is 2L/min, and high energy ultraviolet light processing, the irradiation work(of high energy UV are carried out to the first substrate and the second substrate
Rate is 20mW, and high energy UV is the monochromatic narrow band light that illumination wavelength lambda is 228nm, irradiation time 30min；It is purple to close high energy
First substrate is exposed to nitrogen atmosphere down toward natural cooling by outer optical assembly.
It is repaiied surface is carried out to graphene in the graphene of non-surface modification, polymethyl methacrylate and embodiment 3
Sample after decorations carries out XPS spectrum analysis, as a result as shown in Fig. 3, Fig. 4 and Fig. 5, is as can be seen from Figure 5 carried out to graphene
Occur two peaks in sample after surface modification, and corresponds respectively to the peak position of graphene and polymethyl methacrylate, into
One step illustrates that after above-mentioned high energy ultraviolet light processing, high molecular polymer has been grafted on graphene.
It should be noted that in above-described embodiment, carry out to be divided using using EA 125 when XPS spectrum analysis
Instrument, non-chromatic aluminium x-ray source (1486.5eV)；
It is scanned JEM-7400F of the Electronic Speculum test using JEOL manufacturers.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of surface modification method of graphene, which is characterized in that include the following steps：
Graphene is deposited in the first substrate；
High molecular polymer is deposited in the second substrate, the high molecular polymer is selected from carbochain high polymer；
First substrate and second substrate are positioned in same reaction chamber；And
Under protective gas atmosphere, high energy ultraviolet light processing, the height are carried out to first substrate and second substrate
The irradiation power of energy ultraviolet light is 15mW~35mW, and the high energy UV is the monochrome that illumination wavelength lambda is 150nm~350nm
Narrow band light.
2. the surface modification method of graphene according to claim 1, which is characterized in that described to be deposited in the first substrate
The step of graphene, specifically includes：
Under protective gas atmosphere, the first substrate is warming up to 550 DEG C~900 DEG C, it is standard to keep the pressure of reaction system
Atmospheric pressure；
Hydrogen and methane gas are passed through into reaction system, the throughput of the hydrogen is 5sccm~15sccm, the methane gas
The throughput of body is 800sccm~1000sccm；And
Stop being passed through hydrogen and methane gas into reaction system, and slow cooling to room temperature obtains graphene.
3. the surface modification method of graphene according to claim 1, which is characterized in that the deposition thickness of the graphene
For 0.1nm~1.8nm.
4. the surface modification method of graphene according to claim 1, which is characterized in that the carbochain high polymer is selected from poly-
At least one of styrene, polymethyl methacrylate, polyvinyl acetate, polyethylene and polypropylene.
5. the surface modification method of graphene according to claim 1, which is characterized in that deposited in second substrate
High molecular polymer thickness be 4mm~6mm.
6. the surface modification method of graphene according to claim 1, which is characterized in that first substrate is copper sheet；
And/or second substrate is silicon chip, nickel sheet or copper sheet.
7. the surface modification method of graphene according to claim 1, which is characterized in that first substrate and described the
Two substrates are positioned over same level, and there is first substrate the first working face, second substrate to have the second work
Face forms graphene layer on first working face, and macromolecule layer, the graphene layer are formed on second working face
Form the gap no more than 0.8mm in the horizontal direction with macromolecule layer.
8. the surface modification method of graphene according to claim 1, which is characterized in that the irradiation of the high energy UV
Wavelength X is calculated by the following formula：
λ1=Nhc/ δ1, λ2=Nhc/ δ2；
λ≤min{λ1, λ2}；
Wherein, N is Avgadro constant, and h is Planck's constant, and c is wavelength；δ1For the bond energy of C=C keys in graphene, λ1For
So that ultraviolet light wavelength when C=C keys are broken in graphene；δ2For the key of C-C keys or C=C keys in high molecular polymer
Can, λ2Ultraviolet light wavelength when so that C-C keys or C=C keys are broken in high molecular polymer.
9. the surface modification method of graphene according to claim 1, which is characterized in that first substrate and described
When second substrate carries out high energy ultraviolet light processing, the first substrate and second substrate described in high energy UV light source distance away from
From for 2mm~20mm.
10. the surface modification method of graphene according to claim 1, which is characterized in that described in protective gas atmosphere
Further include later step to the step of first substrate and second substrate progress high energy ultraviolet light processing under enclosing：By institute
It states the first substrate and is positioned over natural cooling under protective gas atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810276330.1A CN108423670A (en) | 2018-03-30 | 2018-03-30 | The surface modification method of graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810276330.1A CN108423670A (en) | 2018-03-30 | 2018-03-30 | The surface modification method of graphene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108423670A true CN108423670A (en) | 2018-08-21 |
Family
ID=63159565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810276330.1A Withdrawn CN108423670A (en) | 2018-03-30 | 2018-03-30 | The surface modification method of graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108423670A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112175286A (en) * | 2020-09-02 | 2021-01-05 | 兰州大学 | Graphene-polypropylene composite master batch and preparation method and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060210466A1 (en) * | 2005-03-11 | 2006-09-21 | Somenath Mitra | Microwave induced functionalization of single wall carbon nanotubes and composites prepared therefrom |
| US20090068471A1 (en) * | 2007-09-10 | 2009-03-12 | Samsung Electronics Co., Ltd. | Graphene sheet and process of preparing the same |
| CN102320599A (en) * | 2011-08-02 | 2012-01-18 | 同济大学 | Method for functionalizing polymer on surface of nano graphene oxide |
| US20130001068A1 (en) * | 2009-07-27 | 2013-01-03 | Aruna Zhamu | Production process for chemically functionalized nano graphene materials |
| CN104445177A (en) * | 2014-12-16 | 2015-03-25 | 中国科学院宁波材料技术与工程研究所 | Preparation method of graphene, and graphene |
| CN103339154B (en) * | 2011-02-04 | 2015-07-01 | 积水化学工业株式会社 | Method for producing flake graphite-polymer composite material |
-
2018
- 2018-03-30 CN CN201810276330.1A patent/CN108423670A/en not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060210466A1 (en) * | 2005-03-11 | 2006-09-21 | Somenath Mitra | Microwave induced functionalization of single wall carbon nanotubes and composites prepared therefrom |
| US20090068471A1 (en) * | 2007-09-10 | 2009-03-12 | Samsung Electronics Co., Ltd. | Graphene sheet and process of preparing the same |
| CN101835609A (en) * | 2007-09-10 | 2010-09-15 | 三星电子株式会社 | Graphene sheet and process of preparing the same |
| US20130001068A1 (en) * | 2009-07-27 | 2013-01-03 | Aruna Zhamu | Production process for chemically functionalized nano graphene materials |
| CN103339154B (en) * | 2011-02-04 | 2015-07-01 | 积水化学工业株式会社 | Method for producing flake graphite-polymer composite material |
| CN102320599A (en) * | 2011-08-02 | 2012-01-18 | 同济大学 | Method for functionalizing polymer on surface of nano graphene oxide |
| CN104445177A (en) * | 2014-12-16 | 2015-03-25 | 中国科学院宁波材料技术与工程研究所 | Preparation method of graphene, and graphene |
Non-Patent Citations (1)
| Title |
|---|
| FEI DENG ET AL.: "Grafting polymer coatings onto the surfaces of carbon nanotube forests and yarns via a photon irradiation process", 《APPLIED PHYSICS LETTERS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112175286A (en) * | 2020-09-02 | 2021-01-05 | 兰州大学 | Graphene-polypropylene composite master batch and preparation method and application thereof |
| CN112175286B (en) * | 2020-09-02 | 2021-08-06 | 兰州大学 | Graphene-polypropylene composite master batch and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108314009B (en) | Surface modification method of carbon nanotube array | |
| CN108532287B (en) | Surface modification method of carbon nanotube fiber | |
| Shi et al. | Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition | |
| TWI295079B (en) | Method and device for forming oxide film | |
| JP4790171B2 (en) | Recycling method of CdTe / CdS thin film solar cell module | |
| CN104389016B (en) | Method for quickly preparing large-size single-crystal graphene | |
| US11114674B2 (en) | Proton conductive two-dimensional amorphous carbon film for gas membrane and fuel cell applications | |
| JPH02197117A (en) | Manufacture of carbon-containing amorphous silicon thin film | |
| US20060034756A1 (en) | Method for generating hydrogen gas utilizing activated aluminum fine particles | |
| WO2019015222A1 (en) | Solar seawater desalination or sewage treatment method based on carbon nanotube film | |
| van Assche et al. | On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers | |
| CN108423670A (en) | The surface modification method of graphene | |
| JP2005510081A5 (en) | ||
| CN109748260A (en) | Modified carbon nano-tube array and elastic composite and preparation method thereof | |
| Rajabali et al. | Evolution of Phosphorene Sheets through Direct Crystallization of Thin‐Film Red Phosphorus | |
| CN109517231B (en) | Elastomer composite and method for making same | |
| JP6498710B2 (en) | Method for producing oxidation-chromogenic electrochromic thin film | |
| JPH02106927A (en) | Manufacture of semiconductor device | |
| JP6493658B2 (en) | Method for producing highly water-repellent film | |
| JPS60137898A (en) | Production of thin diamond film | |
| CN103184438A (en) | Film heat treatment method and heat treatment device, chemical vapor deposition apparatus | |
| JPH0291939A (en) | Formation of insulating film | |
| JP7217055B2 (en) | Proton-conducting two-dimensional amorphous carbon films for gas membrane and fuel cell applications | |
| JPH06321690A (en) | Forming method and treating method of semiconductor diamond film | |
| JPH0298127A (en) | Formation of semiconductor thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180821 |