CN108418458A - A kind of half-bridge inverter based on quasi- Y source impedance networks - Google Patents
A kind of half-bridge inverter based on quasi- Y source impedance networks Download PDFInfo
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- CN108418458A CN108418458A CN201810205856.0A CN201810205856A CN108418458A CN 108418458 A CN108418458 A CN 108418458A CN 201810205856 A CN201810205856 A CN 201810205856A CN 108418458 A CN108418458 A CN 108418458A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
Abstract
The invention discloses a kind of half-bridge inverters based on quasi- Y source impedance networks, which is characterized in that including：DC power supply, first switch tube module, second switch tube module, the first inductance, the second inductance, third inductance, the first capacitance, the second capacitance, third capacitance and diode.A kind of half-bridge inverter based on quasi- Y source impedance networks provided by the invention is in the process of running without the risk for leading directly to open circuit, it is safe, and circuit structure is simple, without additionally increasing first class boost circuit, convenient for control, it can be by adjusting the output voltage of the straight-through duty ratio adjusting circuit of the circuit, it can be realized by the number of turns of three windings and the wide-voltage range of output voltage is controlled, and three winding coupling inductance is compared with transformer, reduce volume, reduce cost, solve current unidirectional inverter cause in false triggering it is open-minded simultaneously, switching tube can be damaged, and when needing boosting, control is complicated, efficiency reduces, the technical issues of increasing circuit volume and cost.
Description
Technical field
The present invention relates to field of power electronics more particularly to a kind of half-bridge inverters based on quasi- Y source impedance networks.
Background technology
Half-bridge inverter has the characteristics that simple in structure, switching tube quantity is few, therefore, is led in industry by a large amount of apply
Domain, if traditional single phase half bridge inverter is as shown in Figure 1, because of electricity during switching tube alternate conduction on its same bridge arm
The reasons false triggering such as magnetic disturbance causes open-minded simultaneously, can damage switching tube, large effect is caused to circuit.
Also, the half of DC bus-bar voltage is fixed and be to the amplitude of traditional unidirectional inverter output AC voltage, when
When needing boosting, as shown in Fig. 2, needing additional addition first class boost circuit, lead to integrated circuit control from being complicated, efficiency drop
It is low, or step-up transformer is added to improve output voltage in output end, but it is the increase in the volume and cost of circuit.
Therefore, result in current unidirectional inverter causes open-minded simultaneously in false triggering, can damage switching tube, and need to rise
The technical issues of when pressure, control is complicated, efficiency reduction, increase circuit volume and cost.
Invention content
The present invention provides a kind of half-bridge inverters based on quasi- Y source impedance networks, solve current unidirectional inverter
When causing in false triggering open-minded simultaneously, can damage switching tube, and needing boosting, control is complicated, and efficiency reduces, and increases circuit volume
And the technical issues of cost.
The present invention provides a kind of half-bridge inverters based on quasi- Y source impedance networks, including：DC power supply, first switch
Tube module, second switch tube module, the first inductance, the second inductance, third inductance, the first capacitance, the second capacitance, third capacitance and
Diode；
First inductance, second inductance and the third inductance form three winding coupling inductance, first electricity
The first end of the first end of sense, the first end of second inductance and the third inductance is Same Name of Ends；
The DC power supply anode respectively with the first end of first capacitance, the second end of the third capacitance and institute
State the anode electrical connection of diode；
The second end of first capacitance is electrically connected with the first end of second capacitance, first capacitance and described
The common end of two capacitances is electrically connected with the first end of the load；
The cathode of the diode is electrically connected with the first end of first inductance；
The second end of first inductance first end with the first end of second inductance and the third inductance respectively
Electrical connection；
The second end of second inductance is electrically connected with the first end of the third capacitance；
The second end of the third inductance is electrically connected with the first end of the first switch tube module；
The second end of the first switch tube module is electrically connected with the first end of the second switch tube module, and described first
The common end of switch tube module and the second switch tube module is electrically connected with the second end of the load；
The cathode of the DC power supply respectively with the second end of second capacitance and the second switch tube module
Two ends are electrically connected.
Preferably, first inductance, second inductance and the third inductance share an iron core.
Preferably, the first switch tube module is made of a switching tube；
The second switch tube module is made of a switching tube.
Preferably, the first switch tube module is made of at least two paralleled power switches；
The second switch tube module is made of at least two paralleled power switches.
Preferably, the first switch tube module and the second switch pipe die switching tube in the block are NMOS, wherein
The first end of first switch tube module is the drain electrode of NMOS in first switch tube module, and the first end of second switch tube module is the
The drain electrode of NMOS, the second end of first switch tube module are the source electrode of NMOS in first switch tube module in two switch tube modules,
The second end of second switch tube module is the source electrode of NMOS in second switch tube module.
Preferably, the first switch tube module and the second switch pipe die switching tube in the block are IGBT, wherein
The first end of first switch tube module is the collector of IGBT in first switch tube module, and the first end of second switch tube module is
The collector of IGBT in second switch tube module, the second end of first switch tube module are the hair of IGBT in first switch tube module
Emitter-base bandgap grading, the second end of second switch tube module are the emitter of IGBT in second switch tube module.
Preferably, first capacitance, second capacitance and the third capacitance are polarized capacitance, wherein institute
The first end for stating the first capacitance, second capacitance and the third capacitance is the anode of the polarized capacitance, and described
The second end of one capacitance, second capacitance and the third capacitance is the negative terminal of the polarized capacitance.
As can be seen from the above technical solutions, the present invention has the following advantages：
The present invention provides a kind of half-bridge inverters based on quasi- Y source impedance networks, including：DC power supply, first switch
Tube module, second switch tube module, the first inductance, the second inductance, third inductance, the first capacitance, the second capacitance, third capacitance and
Diode；First inductance, second inductance and the third inductance form three winding coupling inductance, first inductance
First end, the first end of the first end of second inductance and the third inductance be Same Name of Ends；The DC power supply is just
Pole is electrically connected with the anode of the first end of first capacitance, the second end of the third capacitance and the diode respectively；Institute
The second end for stating the first capacitance is electrically connected with the first end of second capacitance, the public affairs of first capacitance and second capacitance
End is electrically connected with the first end of the load altogether；The cathode of the diode is electrically connected with the first end of first inductance；Institute
The second end for stating the first inductance is electrically connected with the first end of the first end of second inductance and the third inductance respectively；It is described
The second end of second inductance is electrically connected with the first end of the third capacitance；The second end of the third inductance is opened with described first
Close the first end electrical connection of tube module；The first end of the second end of the first switch tube module and the second switch tube module
Electrical connection, the common end and the second end of the load of the first switch tube module and the second switch tube module are electrically connected
It connects；The cathode of the DC power supply is electric with the second end of second capacitance and the second end of the second switch tube module respectively
Connection.
A kind of half-bridge inverter based on quasi- Y source impedance networks provided by the invention is in the process of running without straight-through open circuit
Risk, it is safe, and circuit structure is simple, without additionally increasing first class boost circuit, convenient for control, can be somebody's turn to do by adjusting
The output voltage of the straight-through duty ratio adjusting circuit of circuit can realize the width electricity to output voltage by the number of turns of three windings
Scope control is pressed, and three winding coupling inductance reduces volume compared with transformer, reduces cost, solves current list
Cause to inverter in false triggering open-minded simultaneously, when can damage switching tube, and need boosting, control is complicated, and efficiency reduces, and increases
The technical issues of circuit volume and cost.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention without having to pay creative labor, may be used also for those of ordinary skill in the art
To obtain other attached drawings according to these attached drawings.
Fig. 1 is traditional single phase half bridge inverter circuit diagram；
Fig. 2 is the circuit diagram that boosting link is added in traditional single phase half bridge inverter；
Fig. 3 is that the circuit diagram of transformer is added in the output end of traditional single phase half bridge inverter；
Fig. 4 is a kind of complete circuit of the half-bridge inverter based on quasi- Y source impedance networks provided by the invention；
Fig. 5 is a kind of half-bridge inverter based on quasi- Y source impedance networks provided in an embodiment of the present invention in first switch
Circuit diagram when tube module and second switch tube module are all opened；
Fig. 6 is a kind of half-bridge inverter based on quasi- Y source impedance networks provided in an embodiment of the present invention in first switch pipe
Module is open-minded, circuit diagram when second switch tube module turns off；
Fig. 7 is a kind of half-bridge inverter based on quasi- Y source impedance networks provided in an embodiment of the present invention in first switch pipe
Module turns off, circuit diagram when second switch tube module is opened；
Wherein, reference numeral is as follows：
Vd, DC power supply；L1, the first inductance；L2, the second inductance；L3, third inductance；D1, diode；S1, first switch pipe
Module；S2, second switch tube module；C1, the first capacitance；C2, the second capacitance；C3, third capacitance；R1, load.
Specific implementation mode
An embodiment of the present invention provides a kind of half-bridge inverter based on quasi- Y source impedance networks, solve current unidirectional
Inverter causes open-minded simultaneously in false triggering, can damage switching tube, and when needing boosting, and control is complicated, and efficiency reduces, and increases electricity
The technical issues of road volume and cost.
In order to make the invention's purpose, features and advantages of the invention more obvious and easy to understand, below in conjunction with the present invention
Attached drawing in embodiment, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that disclosed below
Embodiment be only a part of the embodiment of the present invention, and not all embodiment.Based on the embodiments of the present invention, this field
All other embodiment that those of ordinary skill is obtained without making creative work, belongs to protection of the present invention
Range.
Fig. 4 to Fig. 7 is please referred to, an embodiment of the present invention provides a kind of half-bridge inverters based on quasi- Y source impedance networks
One embodiment, including：
DC power supply Vd, first switch tube module S1, second switch tube module S2, the first inductance L1, the second inductance L2, third
Inductance L3, the first capacitance C1, the second capacitance C2, third capacitance C3With diode D1；
First inductance L1, the second inductance L2With third inductance L3Form three winding coupling inductance, the first inductance L1First
End, the second inductance L2First end and third inductance L3First end be Same Name of Ends；
DC power supply VdAnode respectively with the first capacitance C1First end, third capacitance C3Second end and diode D1
Anode electrical connection；
First capacitance C1Second end and the second capacitance C2First end electrical connection, the first capacitance C1With the second capacitance C2's
Common end and load R1First end electrical connection；
Diode D1Cathode and the first inductance L1First end electrical connection；
First inductance L1Second end respectively with the second inductance L2First end and third inductance L3First end electrical connection；
Second inductance L2Second end and third capacitance C3First end electrical connection；
Third inductance L3Second end and first switch tube module S1First end electrical connection；
First switch tube module S1Second end and second switch tube module S2First end electrical connection, first switch pipe die
Block S1With second switch tube module S2Common end with load R1Second end electrical connection；
DC power supply VdCathode respectively with the second capacitance C2Second end and second switch tube module S2Second end be electrically connected
It connects.
It should be noted that as shown in Fig. 5, Fig. 6 and Fig. 7, the half-bridge based on quasi- Y source impedance networks in the present embodiment is inverse
Become device and there are three kinds of operation modes, dotted portion is inoperative part in Fig. 5, Fig. 6 and Fig. 7, can be considered and is not present；
When the half-bridge inverter based on quasi- Y source impedance networks is operated in mode 1, first switch tube module S1It is opened with second
Close tube module S2It is open-minded, diode D1Bear back-pressure cut-off, DC power supply VdTo the first capacitance C1Charging, third capacitance C3With second
Inductance L2To third inductance L3Charging, the second capacitance C2To load R1Energy is provided；
When the half-bridge inverter based on quasi- Y source impedance networks is operated in mode 2, first switch tube module S1It is open-minded, the
Two switch tube module S2Shutdown, diode D1Forward conduction, DC power supply VdWith the first capacitance C1To the first inductance L1, the second inductance
L2, third capacitance C3, third inductance L3With the second capacitance C2Charging, and be load R1Energy is provided；
When the half-bridge inverter based on quasi- Y source impedance networks is operated in mode 3, first switch tube module S1Shutdown, the
Two switch tube module S2It is open-minded, diode D1Forward conduction, DC power supply VdTo the first capacitance C1, the first inductance L1, the second inductance
L2With third capacitance C3Charging, the second capacitance C2To load R1Energy is provided；
A kind of half-bridge inverter based on quasi- Y source impedance networks provided in this embodiment is in the process of running without straight-through open circuit
Risk, it is safe, and circuit structure is simple, increase first class boost circuit without additional, convenient for control, adjusting can be passed through
The output voltage of the straight-through duty ratio adjusting circuit of the circuit can realize the width to output voltage by the number of turns of three windings
Voltage range controls, and three winding coupling inductance reduces volume compared with transformer, reduces cost, solves current
Unidirectional inverter causes open-minded simultaneously in false triggering, and when can damage switching tube, and need boosting, control is complicated, and efficiency reduces, and increases
The technical issues of powering up road volume and cost.
It is an a kind of implementation of half-bridge inverter based on quasi- Y source impedance networks provided in an embodiment of the present invention above
Example, is below a kind of another embodiment of the half-bridge inverter based on quasi- Y source impedance networks provided in an embodiment of the present invention.
Fig. 4 to Fig. 7 is please referred to, an embodiment of the present invention provides a kind of half-bridge inverters based on quasi- Y source impedance networks
Another embodiment, including：
DC power supply Vd, first switch tube module S1, second switch tube module S2, the first inductance L1, the second inductance L2, third
Inductance L3, the first capacitance C1, the second capacitance C2, third capacitance C3With diode D1；
First inductance L1, the second inductance L2With third inductance L3Form three winding coupling inductance, the first inductance L1First
End, the second inductance L2First end and third inductance L3First end be Same Name of Ends；
DC power supply VdAnode respectively with the first capacitance C1First end, third capacitance C3Second end and diode D1
Anode electrical connection；
First capacitance C1Second end and the second capacitance C2First end electrical connection, the first capacitance C1With the second capacitance C2's
Common end and load R1First end electrical connection；
Diode D1Cathode and the first inductance L1First end electrical connection；
First inductance L1Second end respectively with the second inductance L2First end and third inductance L3First end electrical connection；
Second inductance L2Second end and third capacitance C3First end electrical connection；
Third inductance L3Second end and first switch tube module S1First end electrical connection；
First switch tube module S1Second end and second switch tube module S2First end electrical connection, first switch pipe die
Block S1With second switch tube module S2Common end with load R1Second end electrical connection；
DC power supply VdCathode respectively with the second capacitance C2Second end and second switch tube module S2Second end be electrically connected
It connects.
It should be noted that as shown in Fig. 5, Fig. 6 and Fig. 7, the half-bridge based on quasi- Y source impedance networks in the present embodiment is inverse
Become device and there are three kinds of operation modes, dotted portion is inoperative part in Fig. 5, Fig. 6 and Fig. 7, can be considered and is not present；
When the half-bridge inverter based on quasi- Y source impedance networks is operated in mode 1, first switch tube module S1It is opened with second
Close tube module S2It is open-minded, diode D1Bear back-pressure cut-off, DC power supply VdTo the first capacitance C1Charging, third capacitance C3With second
Inductance L2To third inductance L3Charging, the second capacitance C2To load R1Energy is provided；
When the half-bridge inverter based on quasi- Y source impedance networks is operated in mode 2, first switch tube module S1It is open-minded, the
Two switch tube module S2Shutdown, diode D1Forward conduction, DC power supply VdWith the first capacitance C1To the first inductance L1, the second inductance
L2, third capacitance C3, third inductance L3With the second capacitance C2Charging, and be load R1Energy is provided；
When the half-bridge inverter based on quasi- Y source impedance networks is operated in mode 3, first switch tube module S1Shutdown, the
Two switch tube module S2It is open-minded, diode D1Forward conduction, DC power supply VdTo the first capacitance C1, the first inductance L1, the second inductance
L2With third capacitance C3Charging, the second capacitance C2To load R1Energy is provided；
To under above-mentioned three kinds of mode inductance and capacitance analyze, obtain the first inductance L1Voltage and output voltage point
It is not：
Wherein, N1For the first inductance L1The number of turns, N2For the second inductance L2The number of turns, N3For third inductance L3The number of turns, VL
For the first inductance L1Voltage, Vc2For the second capacitance C2Voltage, Vc3For third capacitance C3Voltage；
Define D1For first switch tube module S1Duty ratio, D2For second switch tube module S2Duty ratio, T be switch
The period of pipe drive signal can obtain according to the ampere-second equilibrium theorem of the voltage-second balance theorem of inductance and capacitance：
When the half-bridge inverter based on quasi- Y source impedance networks is operated in mode 1 and mode 3：
When the half-bridge inverter based on quasi- Y source impedance networks is operated in mode 2：
It can be obtained by formula (3) and formula (4), the output voltage V of the half-bridge inverter based on quasi- Y source impedance networksoIt is opened by first
Close tube module S1Duty ratio, second switch tube module S2Duty ratio, the first inductance L1The number of turns, the second inductance L2The number of turns
With third inductance L3The number of turns codetermine, in actual application, change first switch tube module S as needed1Duty
Than, second switch tube module S2Duty ratio, the first inductance L1The number of turns, the second inductance L2The number of turns and third inductance L3Circle
Number can be obtained required output voltage；
Second capacitance C simultaneously2With third capacitance C3Both ends can also with other load connect, to realize and meanwhile be more
A load supplying can meet the needs of industrial development.
Further, the first inductance L1, the second inductance L2With third inductance L3Share an iron core.
It should be noted that the inductance of three windings can be wound on a magnetic core, volume is reduced, cost is reduced.
Further, first switch tube module S1It is made of a switching tube；
Second switch tube module S2It is made of a switching tube.
It should be noted that in actual application, if the electric current in boost process is smaller, first switch pipe die
Block S1With second switch tube module S2It all can be only made of a switching tube, to save ability cost.
Further, first switch tube module S1It is made of at least two paralleled power switches；
Second switch tube module S2It is made of at least two paralleled power switches.
It should be noted that in actual application, if the electric current in boost process is larger, in order to avoid damage
Device, first switch tube module S1With second switch tube module S2It can be made of at least two paralleled power switches.
Further, first switch tube module S1With second switch tube module S2In switching tube be NMOS, wherein
One switch tube module S1First end be first switch tube module S1The drain electrode of interior NMOS, second switch tube module S2First end
For second switch tube module S2The drain electrode of interior NMOS, first switch tube module S1Second end be first switch tube module S1It is interior
The source electrode of NMOS, second switch tube module S2Second end be second switch tube module S2The source electrode of interior NMOS.
It should be noted that NMOS (N-Metal-Oxide-Semiconductor, N-type Metal-oxide-semicondutor)
Transistor is one kind in switching tube, in one piece of lower P-type silicon substrate of doping concentration (offer can largely move hole), system
The areas N+ (having a large amount of electron sources that free electron is provided for electric current flowing in the regions N+) for making two high-dopant concentrations, are used in combination metal
Aluminium draws two electrodes, makees drain electrode and source electrode respectively, then covers one layer of very thin silica (SiO2) in semiconductor surface
Insulating layer is leaking --- an aluminium electrode (being typically polysilicon) is loaded on the insulating layer between source electrode, as grid, in substrate
Also an electrode is drawn on as soon as, this constitutes an enhanced metal-oxide-semiconductor of N-channel；
NMOS has the advantages that switching speed is fast, switching loss is small.
Further, first switch tube module S1With second switch tube module S2In switching tube be IGBT, wherein
One switch tube module S1First end be first switch tube module S1The collector of interior IGBT, second switch tube module S2First
End is second switch tube module S2The collector of interior IGBT, first switch tube module S1Second end be first switch tube module S1
The emitter of interior IGBT, second switch tube module S2Second end be second switch tube module S2The emitter of interior IGBT.
It should be noted that IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar crystal
Pipe), the compound full-control type voltage driven type work(being made of BJT (double pole triode) and MOS (insulating gate type field effect tube)
Rate semiconductor devices has advantage of both the high input impedance of MOSFET and the low conduction voltage drop of GTR concurrently.
Other than NMOS and IGBT, first switch tube module S1With second switch tube module S2It can also be other types
Switching tube, selected as needed in actual application.
Further, the first capacitance C1, the second capacitance C2With third capacitance C3It is polarized capacitance, wherein the first capacitance
C1, the second capacitance C2With third capacitance C3First end be polarized capacitance anode, the first capacitance C1, the second capacitance C2With
Three capacitance C3Second end be polarized capacitance negative terminal.
It should be noted that the capacity of polarized capacitance is bigger, the occasion of high voltage and high power can be suitable for, certainly,
Polarity free capacitor, the application can also be selected not to be particularly limited herein in the application, determined according to actual conditions；
A kind of half-bridge inverter based on quasi- Y source impedance networks provided in this embodiment is in the process of running without straight-through open circuit
Risk, it is safe, and circuit structure is simple, increase first class boost circuit without additional, convenient for control, adjusting can be passed through
The output voltage of the straight-through duty ratio adjusting circuit of the circuit can realize the width to output voltage by the number of turns of three windings
Voltage range controls, and three winding coupling inductance reduces volume compared with transformer, reduces cost, solves current
Unidirectional inverter causes open-minded simultaneously in false triggering, and when can damage switching tube, and need boosting, control is complicated, and efficiency reduces, and increases
The technical issues of powering up road volume and cost.
In the present specification, relational terms such as first and second and the like are used merely to an entity or operation
It is distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation, there are any this
Actual relationship or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to nonexcludability
Including so that the process, method, article or equipment including a series of elements includes not only those elements, but also wrap
Include other elements that are not explicitly listed, or further include for this process, method, article or equipment intrinsic want
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that wanted including described
There is also other identical elements in the process, method, article or equipment of element.
The above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to before
Stating embodiment, invention is explained in detail, it will be understood by those of ordinary skill in the art that：It still can be to preceding
The technical solution recorded in each embodiment is stated to modify or equivalent replacement of some of the technical features；And these
Modification or replacement, the spirit and scope for various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution.
Claims (7)
1. a kind of half-bridge inverter based on quasi- Y source impedance networks, which is characterized in that including：DC power supply, first switch pipe die
Block, second switch tube module, the first inductance, the second inductance, third inductance, the first capacitance, the second capacitance, third capacitance and two poles
Pipe；
First inductance, second inductance and the third inductance form three winding coupling inductance, first inductance
The first end of first end, the first end of second inductance and the third inductance is Same Name of Ends；
The DC power supply anode respectively with the first end of first capacitance, the second end of the third capacitance and described two
The anode of pole pipe is electrically connected；
The second end of first capacitance is electrically connected with the first end of second capacitance, first capacitance and second electricity
The common end of appearance is electrically connected with the first end of the load；
The cathode of the diode is electrically connected with the first end of first inductance；
First end of the second end of first inductance respectively with the first end of second inductance and the third inductance is electrically connected
It connects；
The second end of second inductance is electrically connected with the first end of the third capacitance；
The second end of the third inductance is electrically connected with the first end of the first switch tube module；
The second end of the first switch tube module is electrically connected with the first end of the second switch tube module, the first switch
The common end of tube module and the second switch tube module is electrically connected with the second end of the load；
The cathode of the DC power supply second end with the second end of second capacitance and the second switch tube module respectively
Electrical connection.
2. a kind of half-bridge inverter based on quasi- Y source impedance networks according to claim 1, which is characterized in that described
One inductance, second inductance and the third inductance share an iron core.
3. a kind of half-bridge inverter based on quasi- Y source impedance networks according to claim 1 or 2, which is characterized in that described
First switch tube module is made of a switching tube；
The second switch tube module is made of a switching tube.
4. a kind of half-bridge inverter based on quasi- Y source impedance networks according to claim 1 or 2, which is characterized in that described
First switch tube module is made of at least two paralleled power switches；
The second switch tube module is made of at least two paralleled power switches.
5. a kind of half-bridge inverter based on quasi- Y source impedance networks according to claim 1 or 2, which is characterized in that described
First switch tube module and the second switch pipe die switching tube in the block are NMOS, wherein the of first switch tube module
One end is the drain electrode of NMOS in first switch tube module, and the first end of second switch tube module is NMOS in second switch tube module
Drain electrode, the second end of first switch tube module is the source electrode of NMOS in first switch tube module, the of second switch tube module
Two ends are the source electrode of NMOS in second switch tube module.
6. a kind of half-bridge inverter based on quasi- Y source impedance networks according to claim 1 or 2, which is characterized in that described
First switch tube module and the second switch pipe die switching tube in the block are IGBT, wherein the of first switch tube module
One end is the collector of IGBT in first switch tube module, and the first end of second switch tube module is in second switch tube module
The collector of IGBT, the second end of first switch tube module are the emitter of IGBT in first switch tube module, second switch pipe
The second end of module is the emitter of IGBT in second switch tube module.
7. a kind of half-bridge inverter based on quasi- Y source impedance networks according to claim 1 or 2, which is characterized in that described
First capacitance, second capacitance and the third capacitance are polarized capacitance, wherein first capacitance, described second
The first end of capacitance and the third capacitance is the anode of the polarized capacitance, first capacitance, second capacitance
Second end with the third capacitance is the negative terminal of the polarized capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108880313A (en) * | 2018-08-24 | 2018-11-23 | 广东工业大学 | A kind of series resonance-type couples three inductance half-bridge converters and system |
| CN109039067A (en) * | 2018-09-25 | 2018-12-18 | 哈尔滨工业大学 | A kind of times die mould three winding coupling inductance high-gain DC converter |
| CN109818494A (en) * | 2019-01-25 | 2019-05-28 | 山东科技大学 | A kind of quasi- source Y DC-DC converter of high gain voltage type |
| CN109921640A (en) * | 2019-03-19 | 2019-06-21 | 哈尔滨工业大学 | AC/DC converter based on crisscross parallel Boost circuit |
| CN117254669A (en) * | 2023-11-14 | 2023-12-19 | 中山市宝利金电子有限公司 | Binary multiport converter based on switch coupling inductance |
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2018
- 2018-03-13 CN CN201810205856.0A patent/CN108418458A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108880313A (en) * | 2018-08-24 | 2018-11-23 | 广东工业大学 | A kind of series resonance-type couples three inductance half-bridge converters and system |
| CN109039067A (en) * | 2018-09-25 | 2018-12-18 | 哈尔滨工业大学 | A kind of times die mould three winding coupling inductance high-gain DC converter |
| CN109818494A (en) * | 2019-01-25 | 2019-05-28 | 山东科技大学 | A kind of quasi- source Y DC-DC converter of high gain voltage type |
| CN109818494B (en) * | 2019-01-25 | 2020-11-17 | 山东科技大学 | High-gain voltage type quasi-Y source direct current-direct current converter |
| CN109921640A (en) * | 2019-03-19 | 2019-06-21 | 哈尔滨工业大学 | AC/DC converter based on crisscross parallel Boost circuit |
| CN117254669A (en) * | 2023-11-14 | 2023-12-19 | 中山市宝利金电子有限公司 | Binary multiport converter based on switch coupling inductance |
| CN117254669B (en) * | 2023-11-14 | 2024-02-02 | 中山市宝利金电子有限公司 | Binary multiport converter based on switch coupling inductance |
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Application publication date: 20180817 |