CN108418063B - Power semiconductor module power terminal - Google Patents
Power semiconductor module power terminal Download PDFInfo
- Publication number
- CN108418063B CN108418063B CN201810482718.7A CN201810482718A CN108418063B CN 108418063 B CN108418063 B CN 108418063B CN 201810482718 A CN201810482718 A CN 201810482718A CN 108418063 B CN108418063 B CN 108418063B
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- China
- Prior art keywords
- power terminal
- semiconductor module
- power
- contact portion
- power semiconductor
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R25/00—Coupling parts adapted for simultaneous co-operation with two or more identical counterparts, e.g. for distributing energy to two or more circuits
- H01R25/16—Rails or bus-bars provided with a plurality of discrete connecting locations for counterparts
- H01R25/161—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R25/00—Coupling parts adapted for simultaneous co-operation with two or more identical counterparts, e.g. for distributing energy to two or more circuits
- H01R25/006—Coupling parts adapted for simultaneous co-operation with two or more identical counterparts, e.g. for distributing energy to two or more circuits the coupling part being secured to apparatus or structure, e.g. duplex wall receptacle
Abstract
The invention discloses a power semiconductor module power terminal. The power semiconductor module power terminal comprises a first power terminal and a second power terminal, wherein the first power terminal comprises a first contact part, a first middle part and a first pin which are sequentially connected, and the second power terminal comprises a second contact part, a second middle part and a second pin which are sequentially connected; the first contact part is provided with a first extending structure, the first extending structure is arranged towards the second contact part, the second contact part is provided with a second extending structure, the second extending structure is arranged towards the first contact part, and part or all of the first extending structure and the second extending structure are overlapped. The power semiconductor module power terminal can increase the area of the lamination area of the first power terminal and the second power terminal, further reduce the stray inductance of the power semiconductor module and improve the efficiency and the operation reliability of the power semiconductor module.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a power terminal of a power semiconductor module.
Background
For power semiconductor modules operating in a continuous switching state, the semiconductor chips thereof can generate voltage spikes during the switching-off process. The voltage spike is determined by the current change rate di/dt of the semiconductor chip and the stray inductance Ls of the commutation loop. If the voltage spike exceeds the rated voltage of the semiconductor chip, the semiconductor chip is broken down and fails, and the normal operation of the power semiconductor module is affected.
Since increasing the current change rate di/dt of the semiconductor element is advantageous to reduce the switching loss of the power semiconductor module to increase the working efficiency of the power semiconductor module, and reducing the voltage spike can help to increase the maximum bus voltage allowed by the power semiconductor module, thereby increasing the output power of the power semiconductor module. Therefore, reducing the stray inductance Ls inside the power semiconductor module is important for improving the efficiency and power density of the power semiconductor module, and important consideration is needed in designing the module.
The stray inductances Ls of the existing power semiconductor modules generally include the stray inductances of the positive and negative power terminals, the stray inductances of the module substrates, and the mutual inductances between the positive and negative power terminals and the module substrates. Among them, for the power terminals, the prior art adopts a mode of arranging the middle parts of the positive and negative power terminals in a lamination manner to reduce the stray inductance of the power terminals. However, when the structure is adopted, the power terminals are used for the contact parts connected with external components, and the interval between the contact parts of the positive and negative power terminals is larger to avoid air breakdown and creepage, so that the reduction of the overall stray inductance is affected.
Accordingly, in order to solve the problem that the conventional power semiconductor module power terminal cannot reliably reduce the overall stray inductance of the power terminal due to the large interval between the contact portions of the positive and negative power terminals, it is necessary to provide a power semiconductor module power terminal capable of reliably reducing the overall stray inductance and improving the efficiency of the power semiconductor module.
Disclosure of Invention
In order to solve the above problems, the present invention provides a power semiconductor module power terminal capable of eliminating the interval between the contact portions of the first power terminal and the second power terminal, further reducing the stray inductance of the power semiconductor module, so as to improve the efficiency and operational reliability of the power semiconductor module.
In order to achieve the above object, the present invention provides a power semiconductor module power terminal, including a first power terminal and a second power terminal, the first power terminal including a first contact portion, a first intermediate portion and a first pin connected in sequence, the second power terminal including a second contact portion, a second intermediate portion and a second pin connected in sequence; the first contact part and the second contact part are arranged in two planes which are parallel to each other, the first middle part and the second middle part are respectively arranged in two planes which are parallel to each other, and the first pin and the second pin are arranged in the same plane in parallel; the first middle part and the second middle part are partially or completely overlapped;
the first contact part is provided with a first extending structure, the first extending structure is arranged towards the second contact part, the second contact part is provided with a second extending structure, the second extending structure is arranged towards the first contact part, and part or all of the first extending structure and the second extending structure are overlapped.
Further, an insulating layer is provided between the portions where the first extension structure and the second extension structure overlap each other.
Further, the first extension structure and the second extension structure are respectively provided with an insulating layer.
Further, the thickness of the first contact portion and the second contact portion is 0.5-2mm.
Further, the first extension structure and the second extension structure have a spacing of less than 2mm.
Further, the first intermediate portion is located in the same plane as the first contact portion, and the second intermediate portion is located in the same plane as the second contact portion.
Further, the first intermediate portion is perpendicular to the first contact portion and the second intermediate portion is perpendicular to the second contact portion.
Further, the first power terminal further comprises a first bending structure, and the first middle part is connected with the first pin through the first bending structure; the second power terminal further comprises a second bending structure, and the second middle part is connected with the second pin through the second bending structure.
Further, the number of the first pins and the second pins are respectively multiple, the first pins and the second pins are respectively divided into two groups, and the two groups of second pins are positioned on two sides of the two groups of first pins.
Further, the plurality of first pins and the plurality of second pins are respectively arranged along the same straight line.
In the power semiconductor module power terminal, besides the first middle part and the second middle part are overlapped with each other, the first extending structure and the second extending structure which are overlapped with each other are additionally arranged on the first contact part and the second contact part respectively, so that the interval between the first contact part and the second contact part is reduced, the stray inductance of the power terminal is further reduced, and the efficiency and the power density of the power semiconductor module are improved.
Drawings
Fig. 1 is a schematic structural diagram of a power terminal of a power semiconductor module according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a position structure of a first power terminal and a second power terminal according to an embodiment of the present invention;
fig. 3 is a top view of the schematic position structure shown in fig. 2.
Detailed Description
The structure and operation of the present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1-3, the power semiconductor module power terminal of the embodiment of the invention is applied to connect a positive and negative direct current bus outside a power module and a DCB (ceramic-based copper-clad laminate) substrate inside the power module.
As shown in fig. 2-3, in an embodiment of the present invention, the power semiconductor module power terminals include a first power terminal 100 and a second power terminal 200. The first power terminal 100 includes a first contact portion 110, a first intermediate portion 120, and a first pin 130 connected in sequence, the first contact portion 110 being provided with a first extension structure 160, the first extension structure 160 being disposed toward the second contact portion 210. The second power terminal 200 includes a second contact portion 210, a second intermediate portion 220, and a second pin 230 connected in sequence, the second contact portion 230 being provided with a second extension structure, the second extension structure being disposed toward the first contact portion 110.
As shown in fig. 2, the first contact portion 110 and the second contact portion 210 are disposed in parallel in two parallel planes, the first middle portion 120 and the second middle portion 220 are disposed in parallel in two parallel planes, and the first pin 130 and the second pin 230 are disposed in parallel in the same plane. The first and second intermediate portions 120 and 220 are partially or entirely disposed so as not to contact each other, and the first and second extension structures 160 and 160 are partially or entirely disposed so as not to contact each other. As shown in fig. 3, taking the first power terminal 100 as an example, the broken line in the drawing is a dividing line of the first contact portion 110, the first middle portion 120, and the first extension structure 160.
In order to ensure effective contact with external positive and negative dc buses, in the embodiment of the present invention, the first and second contact portions 110 and 210 are respectively provided with first and second screw holes 140 and 240, so that the first and second contact portions 110 and 210 are tightly fixed with the corresponding dc buses through the first and second screw holes 140 and 240, respectively, and the first and second power terminals 100 and 200 can be conveniently and rapidly connected with the dc buses.
In the embodiment of the present invention, the first power terminal 100 and the second power terminal 200 are connected to the DCB substrate inside the power module through the first pin 130 and the second pin 230, respectively, so that the dc bus is conducted with the DCB substrate.
In the embodiment of the present invention, if the power current passing through the power semiconductor module flows into the second power terminal 200 and flows out of the first power terminal 100, the directions of the currents flowing through the two first power terminals 100 and the second power terminal 200 are opposite, and the overlapping area of the magnetic field generated by the current can be further increased by the laminated part of the first extension structure 160 and the second extension structure, so that the stray inductance of the converter circuit is reduced. Therefore, the invention can reduce the stray inductance of the terminal without increasing the volume of the DCB substrate and the module, thereby helping to improve the switching frequency of the power semiconductor module, reduce the switching loss and improve the power density of the module.
To avoid air breakdown and creepage when the distance between the first extension structure 160 and the second extension structure is too close, in the embodiment of the present invention, an insulation layer may be added to the first extension structure 160 and the second extension structure to implement insulation arrangement between the first extension structure 160 and the second extension structure. As shown in fig. 1, in one embodiment of the present invention, an insulating layer (only the insulating layer 300 of the second extension structure is shown in fig. 1) may be disposed on the first extension structure 160 and the second extension structure, that is, the upper surface, the lower surface and the side surfaces of the first extension structure 160 and the second extension structure are all wrapped with the insulating layer, so as to achieve the effect of insulating the first extension structure 160 and the second extension structure. In addition to the first extension structure 160 and the second extension structure being integrally wrapped, in order to reduce the material used for the insulation layer and to reduce the cost while ensuring the insulation effect, in another embodiment of the present invention, an insulation layer may be provided between the portions where the first extension structure 160 and the second extension structure overlap each other, that is, only on the portions where the surfaces of the first extension structure 160 and the second extension structure overlap each other, to achieve the effect of insulating the first extension structure 160 and the second extension structure.
Wherein the insulating layer is made of insulating materials, and the insulating materials include, but are not limited to, plastics, rubber and the like.
In order to enable the first and second contact portions 110 and 210, the first and second extension structures 160 and 160 to be effectively conductive and to secure a space between the first and second contact portions 110 and 210, the first and second extension structures 160 and 210 while minimizing the volume of the power semiconductor module, in an embodiment of the present invention, the first and second contact portions 110 and 210 may have a thickness of 0.5-2mm, and the first and second extension structures 160 and 160 may have a space of less than 2mm.
In the embodiment of the present invention, the positional relationship between the first middle portion 120 and the first contact portion 110, and the positional relationship between the second middle portion 220 and the second contact portion 210 can be adjusted according to the actual requirements of different dimensions. As shown in fig. 1-3, in one embodiment of the present invention, the first intermediate portion 120 is in the same plane as the first contact portion 110 and the second intermediate portion 220 is in the same plane as the second contact portion 210. In yet another embodiment of the present invention, the first intermediate portion 120 is perpendicular to the first contact portion 110 and the second intermediate portion 220 is perpendicular to the second contact portion 210.
In order to make the connected first pins 130 and the second pins 230 disposed in parallel in the same plane, in the embodiment of the present invention, the first power terminal 100 further includes a first bending structure 150, and the first middle portion 120 is connected to the first pins 130 through the first bending structure 150. The second power terminal 200 further includes a second bending structure 250, and the second middle portion 220 is connected to the second pin 230 through the second bending structure 250.
As shown in fig. 3, in the embodiment of the present invention, the number of the first pins 130 and the second pins 230 is plural, and in this case, the number of the first bending structures 150 and the second bending structures 250 is plural, and each first pin 130 is connected to the first middle portion 120 through the corresponding first bending structure 150, and each second pin 230 is connected to the second middle portion 220 through the corresponding second bending structure 250.
In the embodiment of the present invention, the plurality of first pins 130 and the plurality of second pins 230 are respectively divided into two groups, and the two groups of second pins 230 are located at two sides of the two groups of first pins 130. Wherein the plurality of first pins 130 and the plurality of second pins 230 are disposed along the same line, respectively.
As shown in fig. 2-3, two sets of second pins 230 of the second power terminal 200 are evenly distributed at both ends, and two sets of first pins 130 of the first power terminal 100 are arranged between the two sets of second pins 230. The two sets of first pins 130 are the same in number and symmetrically arranged about the midline of the power semiconductor module power terminal as a whole, and the two sets of second pins 230 are the same in number and symmetrically arranged about the midline of the power semiconductor module power terminal as a whole.
In summary, compared with the prior art, the power semiconductor module power terminal of the embodiment of the invention can effectively reduce the area of the current-converting loop without increasing the complexity of the design of the DCB substrate and the volume of the power semiconductor module by optimizing the arrangement structure of the first pin and the second pin and designing the first extension structure and the second extension structure to be laminated structures except the first middle part and the second middle part, thereby reducing the stray inductance of the current-converting loop of the power semiconductor module.
The above is only a schematic description of the present invention, and it should be appreciated by those skilled in the art that many modifications can be made to the present invention without departing from the working principles of the present invention, which falls within the scope of the present invention.
Claims (10)
1. The power semiconductor module power terminal is characterized by comprising a first power terminal and a second power terminal, wherein the first power terminal comprises a first contact part, a first middle part and a first pin which are sequentially connected, and the second power terminal comprises a second contact part, a second middle part and a second pin which are sequentially connected; the first contact part and the second contact part are arranged in two planes which are parallel to each other, the first middle part and the second middle part are respectively arranged in two planes which are parallel to each other, and the first pin and the second pin are arranged in the same plane in parallel; all the first middle parts are overlapped with part of the second middle parts, and the area of the first middle parts is smaller than that of the second middle parts in the projection directions of two mutually parallel planes in which the first middle parts and the second middle parts are respectively arranged in parallel;
the first contact portion is provided with a first extending structure, the first extending structure is arranged towards the second contact portion, the second contact portion is provided with a second extending structure, the second extending structure is arranged towards the first contact portion, the first extending structure and the second extending structure are rectangular, and accordingly the shape of the first extending structure is identical to that of the first contact portion and the second contact portion, and the first extending structure and the second extending structure are all overlapped.
2. The power semiconductor module power terminal according to claim 1, wherein an insulating layer is provided between a portion where the first extension structure and the second extension structure overlap each other.
3. The power semiconductor module power terminal of claim 1, wherein the first extension structure and the second extension structure are each provided with an insulating layer.
4. A power semiconductor module power terminal according to any of claims 1-3, wherein the thickness of the first contact portion and the second contact portion is 0.5-2mm.
5. A power semiconductor module power terminal according to any of claims 1-3, wherein the first extension structure and the second extension structure have a pitch of less than 2mm.
6. The power semiconductor module power terminal of claim 1, wherein the first intermediate portion is in the same plane as the first contact portion and the second intermediate portion is in the same plane as the second contact portion.
7. The power semiconductor module power terminal of claim 1, wherein the first intermediate portion is perpendicular to the first contact portion and the second intermediate portion is perpendicular to the second contact portion.
8. The power semiconductor module power terminal of claim 1, wherein the first power terminal further comprises a first bent structure, the first intermediate portion being connected to the first pin by the first bent structure; the second power terminal further comprises a second bending structure, and the second middle part is connected with the second pin through the second bending structure.
9. The power semiconductor module power terminal of claim 8, wherein the number of the first pins and the second pins is plural, the plural first pins and the plural second pins are divided into two groups, and the two groups of the second pins are located on both sides of the two groups of the first pins.
10. The power semiconductor module power terminal of claim 9, wherein a plurality of the first pins and a plurality of the second pins are respectively disposed along a same straight line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810482718.7A CN108418063B (en) | 2018-05-18 | 2018-05-18 | Power semiconductor module power terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810482718.7A CN108418063B (en) | 2018-05-18 | 2018-05-18 | Power semiconductor module power terminal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108418063A CN108418063A (en) | 2018-08-17 |
| CN108418063B true CN108418063B (en) | 2023-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810482718.7A Active CN108418063B (en) | 2018-05-18 | 2018-05-18 | Power semiconductor module power terminal |
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| CN (1) | CN108418063B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5751058A (en) * | 1995-10-25 | 1998-05-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having parallel overlapping main current terminals |
| CN101582413A (en) * | 2009-04-02 | 2009-11-18 | 嘉兴斯达微电子有限公司 | Power module with lower stray inductance |
| CN201417771Y (en) * | 2009-04-02 | 2010-03-03 | 嘉兴斯达微电子有限公司 | Power module with lower stray inductance |
| CN101820106A (en) * | 2009-01-13 | 2010-09-01 | 通用汽车环球科技运作公司 | Low inductance busbar assembly |
| CN101908674A (en) * | 2009-01-06 | 2010-12-08 | 通用汽车环球科技运作公司 | Low inductance connector assembly |
| CN102646880A (en) * | 2011-02-22 | 2012-08-22 | 雷迪埃 | Electrical contact for electrical connector |
| CN104576624A (en) * | 2014-12-29 | 2015-04-29 | 中国船舶重工集团公司第七一三研究所 | IGBT (insulated gate bipolar translator) module and output copper bar electrical connection structure |
| CN104617413A (en) * | 2015-01-19 | 2015-05-13 | 株洲南车时代电气股份有限公司 | Horizontal overlapping type power terminal |
| CN105514072A (en) * | 2016-01-29 | 2016-04-20 | 南京银茂微电子制造有限公司 | Power module low-inductance lead terminal |
| CN107731771A (en) * | 2017-10-31 | 2018-02-23 | 臻驱科技（上海）有限公司 | Power semiconductor modular terminal with low spurious inductance |
| CN208241025U (en) * | 2018-05-18 | 2018-12-14 | 臻驱科技（上海）有限公司 | A kind of power semiconductor modular power terminal |
-
2018
- 2018-05-18 CN CN201810482718.7A patent/CN108418063B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5751058A (en) * | 1995-10-25 | 1998-05-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having parallel overlapping main current terminals |
| CN101908674A (en) * | 2009-01-06 | 2010-12-08 | 通用汽车环球科技运作公司 | Low inductance connector assembly |
| CN101820106A (en) * | 2009-01-13 | 2010-09-01 | 通用汽车环球科技运作公司 | Low inductance busbar assembly |
| CN101582413A (en) * | 2009-04-02 | 2009-11-18 | 嘉兴斯达微电子有限公司 | Power module with lower stray inductance |
| CN201417771Y (en) * | 2009-04-02 | 2010-03-03 | 嘉兴斯达微电子有限公司 | Power module with lower stray inductance |
| CN102646880A (en) * | 2011-02-22 | 2012-08-22 | 雷迪埃 | Electrical contact for electrical connector |
| CN104576624A (en) * | 2014-12-29 | 2015-04-29 | 中国船舶重工集团公司第七一三研究所 | IGBT (insulated gate bipolar translator) module and output copper bar electrical connection structure |
| CN104617413A (en) * | 2015-01-19 | 2015-05-13 | 株洲南车时代电气股份有限公司 | Horizontal overlapping type power terminal |
| CN105514072A (en) * | 2016-01-29 | 2016-04-20 | 南京银茂微电子制造有限公司 | Power module low-inductance lead terminal |
| CN107731771A (en) * | 2017-10-31 | 2018-02-23 | 臻驱科技（上海）有限公司 | Power semiconductor modular terminal with low spurious inductance |
| CN208241025U (en) * | 2018-05-18 | 2018-12-14 | 臻驱科技（上海）有限公司 | A kind of power semiconductor modular power terminal |
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| CN108418063A (en) | 2018-08-17 |
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