CN108416252A - Optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor - Google Patents
Optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor Download PDFInfo
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- CN108416252A CN108416252A CN201810030310.6A CN201810030310A CN108416252A CN 108416252 A CN108416252 A CN 108416252A CN 201810030310 A CN201810030310 A CN 201810030310A CN 108416252 A CN108416252 A CN 108416252A
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- photoelectric sensor
- screen based
- finger print
- film transistor
- optical finger
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Image Input (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
The invention discloses optical finger prints under a kind of screen based on photoelectric sensor to know method for distinguishing, to replace the thin film transistor (TFT) in tradition TFT screens in the polysilicon double gate thin-film transistor of top grid integrated optic-electronic sensor, fingerprint collecting pattern is switched to by touch-control starting switch on the basic function that image is shown, it is acquired from the reflected light of finger using photoelectric sensor, and it is read by the system by charge amplifier, to realize that optical finger print identifies, the fingerprint image acquisition function under liquid crystal display is realized using single device, reduce the occupancy of mobile phone terminal inner space, highly integrated for mobile phone terminal provides the foundation.
Description
Technical field
The present invention relates to the application field of fingerprint recognition under screen, optics under especially a kind of screen based on photoelectric sensor
The method of fingerprint recognition.
Background technology
Raising with people to information security demand, biological identification technology are increasingly paid close attention to by all circles.Numerous
In biological identification technology, fingerprint identification technology is because of the practicality, it has also become attention rate highest, a kind of most widely used technology,
For handheld mobile device such as mobile phone, tablet computer, fingerprint recognition slowly becomes an indispensable part.
Currently on the market, main fingerprint identification technology is that fingerprint recognition module is embedded in independent button or is embedded into display screen
It is interior, since current mobile device terminal is intended to screen and lightening, increasingly reducing using space inside mobile phone terminal comprehensively,
It is difficult to vacate corresponding space setting fingerprint recognition module, therefore fingerprint under the screen by integrating Fingerprint Identification Unit part under screen
Identifying schemes come into being.
Invention content
To solve the above problems, the present invention is based on the polysilicon double grid film crystals in top grid integrated optic-electronic sensor
Tube device realizes that the lower optical finger print of screen identifies using this polysilicon double gate thin-film transistor device.
Technical solution is used by the present invention solves the problems, such as it：
Optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor, includes the following steps：
S1：When finger touches screen, touch-control starting switch is closed；
S2：Mode switch is switched to imaging end, and into fingerprint image acquisition pattern, applying negative voltage to offset side makes photoelectricity
Sensor reverse bias is absorbed by photoelectric sensor from the reflected light of finger in running order and is generated electron hole
It is right；
S3：Electronics is assembled to top grid, so that the threshold voltage of polysilicon double gate thin-film transistor is generated variation, and pass through
The junction capacity storage change capacitance of polysilicon double gate thin-film transistor top capacity and photoelectric sensor；
S4：Negative voltage is applied to selection end, polysilicon double gate thin-film transistor is opened and charge is made to flow into charge amplifier,
System is set to obtain the charge information of acquired fingerprint.
Further, step S2 applies positive voltage, to photoelectricity before entering fingerprint image acquisition pattern to offset side
Sensor and top grid carry out reset operation.
Further, the reset operation applies negative voltage to selection end simultaneously, to data terminal plus positive voltage, opens polysilicon
Double gate thin-film transistor and make pixel terminal charge to the same current potential of data terminal, and common electrode is set as positive voltage, makes liquid crystal display
Unit blank.
Further, in step S2 after photoelectric sensor reverse bias, it is double to close polysilicon that positive voltage is applied to selection end
Gate thin-film transistors.
Further, when applying positive voltage to selection end, the voltage of data terminal, pixel terminal and common electrode remains unchanged.
Further, pixel terminal and the voltage of common electrode remain unchanged in step S4.
Further, the photoelectric sensor is connect with top grid, and the mode switch includes fixing end and movable end, institute
It states fixing end to connect with the data terminal, the movable end corresponds to the reverse input end of the charge amplifier, and the top is more
Crystal silicon double gate thin-film transistor capacitance and photoelectric sensor capacitance are connect with the pixel terminal respectively.
The beneficial effects of the invention are as follows：In the polysilicon double gate thin-film transistor device of top grid integrated optic-electronic sensor
Lower realization fingerprint recognition uses the fingerprint identification method of fingerprint recognition device instead of traditional independence, not against independent
In the case of device, the occupancy of mobile phone terminal inner space can be reduced using the present invention, carried for the highly integrated of mobile phone terminal
Basis is supplied.
Description of the drawings
The invention will be further described with reference to the accompanying drawings and examples.
Fig. 1 is the circuit diagram of the polysilicon double gate thin-film transistor device of integrated optic-electronic sensor of the present invention；
Fig. 2 is the fingerprint image acquisition pattern sequence diagram of the embodiment of the present invention；
Fig. 3 is the fingerprint collecting schematic diagram of the embodiment of the present invention.
Specific implementation mode
Referring to Figures 1 and 2, optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor, is based on top grid
The polysilicon double gate thin-film transistor device of integrated optic-electronic sensor, using the device as individual liquid crystal display cells, the light
Electric transducer is a variety of photoelectricity such as MIS photodiodes and Schottky photo diode including PIN photodiode
Sensor is unified in the present embodiment to be indicated with photodiode.
There are four ports for the polysilicon double gate thin-film transistor tool, and what is respectively extracted from photodiode anode is inclined
Set end Bias, extracted from the bottom grid of the polysilicon double gate thin-film transistor selection end Select, from source electrode draw
The pixel terminal Pixel come the and data terminal Data extracted from drain electrode.
The polysilicon double gate thin-film transistor device of the top grid integrated optic-electronic sensor further includes mode switch
Mode Switch, touch-control starting switch TIS, charge amplifier Charge AMP, common electrode Com, display end Display and at
As end Imaging, the cathode of the photodiode is connect with the top grid of the polysilicon double gate thin-film transistor, described
Mode switch Mode Switch are single-pole double-throw switch (SPDT), including fixing end, the first movable end and the second movable end, the data
Hold the fixing end of Data connection mode switch Mode Switch, first movable end connects display end Display, and described the
Two movable ends connect the reverse input end of charge amplifier Charge AMP, the touch-control starting switch TIS and mode switch
Mode Switch linkages, the positive input of the charge amplifier Charge AMP connect with the touch-control starting switch TIS
It connects, the output end of the charge amplifier Charge AMP is connect with imaging end Imaging, the common electrode Com and pixel terminal
Pixel connections.
When the mode switch Mode Switch are connected to display end Display, the top grid integrated electro sensing
The polysilicon double gate thin-film transistor device of device works in liquid crystal driving pattern, is used for normal display screen curtain content, herein
It does not tell about in detail.
With reference to Fig. 3, under liquid crystal driving pattern, when finger touches screen, touch-control starting switch TIS is closed
(touch panel of touch-control starting switch TIS and screen connects, and when finger touches screen, touching signals can pass through
Touch panel reaches touch-control starting switch, causes touch-control starting switch and is closed), the second activity of mode switch Mode Switch
End connects with the reverse input end of charge amplifier Charge AMP, i.e., mode switch Mode Switch pass through charge amplifier
Charge AMP are connected to imaging end Imaging.
The mode switch Mode Switch by charge amplifier Charge AMP be connected to imaging end Imaging it
Before, it needs by the system reset stage, the operation of reseting stage is as follows：Positive voltage is applied to offset side Bias, to two pole of photoelectricity
Pipe and top grid are resetted, and are applied negative voltage to selection end Select, are applied positive voltage to data terminal Data, open polycrystalline
Silicon double gate thin-film transistor and make pixel terminal Pixel charge to the same current potentials of data terminal Data, while common electrode Com being set as just
Voltage makes liquid crystal display blank.
It completes after resetting, mode switch Mode Switch switch to the ends imaging Imaging, apply to offset side Bias negative
Voltage makes photodiode reverse bias in running order, and it is double to close polysilicon to apply positive voltage to selection end Select
The voltage of gate thin-film transistors, data terminal Data, pixel terminal Pixel and common electrode Com then remains unchanged；Due to liquid crystal display list
Member shows that white light is absorbed from the reflected light of finger by photodiode to screen external exposure, and photodiode is reversed inclined
Lower generation electron hole pair is set, electronics is assembled to top grid, is formed similar to polysilicon double gate thin-film transistor top plus grid
The state of pressure makes the threshold voltage of polysilicon double gate thin-film transistor generate variation, and passes through polysilicon double gate thin-film transistor
Top capacity (not indicated in figure) and the junction capacity (not indicated in figure) of photodiode kept.
After completing above-mentioned steps, system can be read out the fingerprint image of acquisition, operate and be：Keep offset side
The voltage of Bias, pixel terminal Pixel and common electrode Com are constant, apply negative voltage to selection end Select, bigrid polysilicon is double
Gate thin-film transistors are opened, and charge is made to flow into charge amplifier Charge AMP, are read by the system to get corresponding
Fingerprint image.
The above, only presently preferred embodiments of the present invention, the invention is not limited in the above embodiments, as long as
It reaches the technique effect of the present invention with identical means, should all belong to the scope of protection of the present invention.
Claims (7)
1. optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor, it is characterised in that include the following steps：
S1：When finger touches screen, touch-control starting switch is closed；
S2：Mode switch is switched to imaging end, and into fingerprint image acquisition pattern, applying negative voltage to offset side makes photoelectric sensing
Device reverse bias is absorbed by photoelectric sensor from the reflected light of finger in running order and is generated electron hole pair；
S3：Electronics is assembled to top grid, so that the threshold voltage of polysilicon double gate thin-film transistor is generated variation, and pass through polycrystalline
The junction capacity storage change capacitance of silicon double gate thin-film transistor top capacity and photoelectric sensor；
S4：Negative voltage is applied to selection end, polysilicon double gate thin-film transistor opens and charge made to flow into charge amplifier, make be
System obtains the charge information of acquired fingerprint.
2. optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor according to claim 1, feature exists
In：Step S2 applies positive voltage before entering fingerprint image acquisition pattern, to offset side, to photoelectric sensor and top
Grid carries out reset operation.
3. optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor according to claim 2, feature exists
In：The reset operation applies negative voltage to selection end simultaneously, to data terminal plus positive voltage, opens polysilicon double grid film crystal
Manage and make pixel terminal charge to the same current potential of data terminal, and common electrode is set as positive voltage, makes liquid crystal display blank.
4. optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor according to claim 1, feature exists
In：In step S2 after photoelectric sensor reverse bias, positive voltage is applied to close polysilicon double gate thin-film transistor to selection end.
5. optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor according to claim 4, feature exists
In：When applying positive voltage to selection end, the voltage of data terminal, pixel terminal and common electrode remains unchanged.
6. optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor according to claim 1, feature exists
In：Pixel terminal and the voltage of common electrode remain unchanged in step S4.
7. optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor according to claim 1, feature exists
In：The photoelectric sensor is connect with top grid, and the mode switch includes fixing end and movable end, the fixing end and institute
Data terminal connection is stated, the movable end corresponds to the reverse input end of the charge amplifier, the top polysilicon silicon double grid film
Transistor capacitance and photoelectric sensor capacitance are connect with the pixel terminal respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810030310.6A CN108416252A (en) | 2018-01-11 | 2018-01-11 | Optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810030310.6A CN108416252A (en) | 2018-01-11 | 2018-01-11 | Optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor |
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| CN108416252A true CN108416252A (en) | 2018-08-17 |
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| CN201810030310.6A Pending CN108416252A (en) | 2018-01-11 | 2018-01-11 | Optical finger print knows method for distinguishing under a kind of screen based on photoelectric sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109858443A (en) * | 2019-01-31 | 2019-06-07 | 厦门天马微电子有限公司 | The production method of display panel, display device and display panel |
| WO2020211415A1 (en) * | 2019-04-17 | 2020-10-22 | 京东方科技集团股份有限公司 | Semiconductor apparatus, pixel circuit, and control method thereof |
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| US20090261738A1 (en) * | 2008-04-18 | 2009-10-22 | Innolux Display Corp. | Driving method for photo transistor and photo sensor and flat panel display using the same |
| CN104573648A (en) * | 2014-12-31 | 2015-04-29 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Touch display screen drive and fingerprint image acquisition method |
| CN106295540A (en) * | 2016-08-02 | 2017-01-04 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Use single device to realize display to drive and the method for fingerprint image acquisition |
| CN106959384A (en) * | 2017-04-19 | 2017-07-18 | 京东方科技集团股份有限公司 | A kind of photoelectric detective circuit, display panel and display device |
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2018
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Patent Citations (4)
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| US20090261738A1 (en) * | 2008-04-18 | 2009-10-22 | Innolux Display Corp. | Driving method for photo transistor and photo sensor and flat panel display using the same |
| CN104573648A (en) * | 2014-12-31 | 2015-04-29 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Touch display screen drive and fingerprint image acquisition method |
| CN106295540A (en) * | 2016-08-02 | 2017-01-04 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Use single device to realize display to drive and the method for fingerprint image acquisition |
| CN106959384A (en) * | 2017-04-19 | 2017-07-18 | 京东方科技集团股份有限公司 | A kind of photoelectric detective circuit, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109858443A (en) * | 2019-01-31 | 2019-06-07 | 厦门天马微电子有限公司 | The production method of display panel, display device and display panel |
| CN109858443B (en) * | 2019-01-31 | 2021-07-09 | 厦门天马微电子有限公司 | Display panel, display device and manufacturing method of display panel |
| WO2020211415A1 (en) * | 2019-04-17 | 2020-10-22 | 京东方科技集团股份有限公司 | Semiconductor apparatus, pixel circuit, and control method thereof |
| US11475833B2 (en) | 2019-04-17 | 2022-10-18 | Beijing Boe Technology Development Co., Ltd. | Semiconductor apparatus, pixel circuit and control method thereof |
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Application publication date: 20180817 |
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