CN108411264A - A kind of powder magnetic control sputtering device - Google Patents
A kind of powder magnetic control sputtering device Download PDFInfo
- Publication number
- CN108411264A CN108411264A CN201810255410.9A CN201810255410A CN108411264A CN 108411264 A CN108411264 A CN 108411264A CN 201810255410 A CN201810255410 A CN 201810255410A CN 108411264 A CN108411264 A CN 108411264A
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- CN
- China
- Prior art keywords
- powder
- permanent magnet
- sputtering target
- metal tray
- body material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
The invention belongs to technical field of film preparation, are related to a kind of powder magnetic control sputtering device.The device includes metal tray, powder body material and magnetron sputtering target system.By powder body material in the groove of metal tray, compacting forms powder sputtering target, powder sputtering target is mounted on the cathode of magnetron sputtering target system, carries out powder magnetic control sputtering coating.The present invention is directly sputtered using powder body material, is substantially shorter R＆D cycle and the production cost of thin-film technique exploration, it is ensured that effective control of thin film composition repeatability in production process.
Description
Technical field
The invention belongs to field of film preparation, are related to a kind of powder magnetic control sputtering device.
Background technology
With the continuous development of science and technology, film is as special material forms, in aerospace, mechanics of communication, meter
The various fields such as calculation machine science and machine-building, play increasingly important role.It is thin that thin-film material can be divided into structure
Film and function film two major classes.Structural membrane is mainly used for the surface modification and protection of workpiece, and function film is then mainly applied
In the manufacture of various functions device, such as dynamic memory, semiconductor laser, transparent conductive electrode, microwave receiver, sensor
Deng.Thin-film material research has penetrated into each research such as physics, chemistry, material science, information science or even life science
Field has not only attracted plurality of scientific worker, but also by the extensive concern of various countries' high-tech industry circle.
Magnetron sputtering is to prepare one of important method of thin-film material, has been widely used for scientific research and industrial metaplasia
Production.Magnetron sputtering is usually to sputter solid target using gas discharge, and deposit by vapor transportation to sample or workpiece surface
Form solid film.Due to being related to numerous processes such as plasma discharge, magnetron sputtering, vapor transportation and deposition so that film
The regulation and control of ingredient are very difficult, generally require a large amount of experimental technique and explore, workload is huge.In addition, the preferential sputtering of material
It will lead to target material surface component segregation so that the repeatability of thin film composition is deteriorated, and then influences the performance of film and related device.
Invention content
The object of the present invention is to provide a kind of low manufacture cost, the period is short, is easy to thin film composition adjustment and stability control
Powder magnetic control sputtering device.
Technical scheme of the present invention：
A kind of powder magnetic control sputtering device, including metal tray, powder body material and magnetron sputtering target system；
The magnetron sputtering target system, including permanent magnet 1 and chip bench 9；Distinguish at the both ends of the permanent magnet 1
For permanent magnet N pole a2 and permanent magnet N pole b4, centre is the poles permanent magnet S 3；The permanent magnet 1 and chip bench 9 it
Between form magnetic field 7 and electric field 8, the cathode 5 and anode 6 in electric field 8 are located at the top of permanent magnet 1；Cathode 5 and permanent magnet 1
Collectively constitute Ion Sputter Magnetron Gun；The angle of inclination for controlling Ion Sputter Magnetron Gun avoids falling off for powder body material in sputtering process；
The metal tray, Intermediate Gray is fluted, is made of metal material of the heat conduction without magnetic, raised groove edge position
In outside the anode 6 of magnetron sputtering target system, pollution is generated to film to avoid the sputtering of powder body material in metal tray, and ensure
There is good electrical contact between metal tray and cathode 5；
The powder body material, in the groove of metal tray, compacting forms powder sputtering target, by powder sputtering target
On the cathode 5 of magnetron sputtering target system, powder magnetic control sputtering coating is carried out.
The material of the metal tray is stainless steel or copper, and the thickness of metal tray bottom is not more than 1mm, depth of groove
For 3-5mm.
The powder body material is the material needed for film preparation, is obtained by mechanical mixture or chemical mixing method.
Beneficial effects of the present invention：The present invention is directly sputtered using powder body material, is substantially shorter thin-film technique exploration
R＆D cycle and production cost, it is ensured that effective control of thin film composition repeatability in production process.
Description of the drawings
Fig. 1 is the vertical view of the metal tray of the present invention.
Fig. 2 is the front view of the metal tray of the present invention.
Fig. 3 is the schematic diagram of magnetron sputtering target system.
In figure：1 permanent magnet；2 permanent magnet N pole a；3 poles permanent magnet S；
4 permanent magnet N pole b；5 cathodes；6 anodes；7 magnetic fields；8 electric fields；9 chip bench.
Specific implementation mode
Below in conjunction with attached drawing and technical solution, the specific implementation mode that further illustrates the present invention.
La is prepared with powder magnetic control sputtering0.5Ba0.5CoO3(LBCO) for monocrystal thin films, first respectively by La (NO3)3·
6H2O,Ba(NO3)2,Co(NO3)2·6H2Tri- kinds of powder of O are 1 according to molar ratio:1:2 ratio mixing, it is rear that 100ml water is added,
Then according to cation：Organic complex：Citric acid=1:1:Organic complex and citric acid are dissolved in by 2 ratio respectively
In 100ml water, then organic complex aqueous solution is mixed with the mixed solution of three kinds of nitrate, after again with aqueous citric acid solution
Mixing, ammonium hydroxide is finally added dropwise into solution, the pH value of solution is made to reach 5-6.With that is, by the solution prepared in 80 DEG C of stirring in water bath
Then 12h keeps the temperature 2-3h and 4-6h in muff at a temperature of 150 DEG C and 250 DEG C, the powder that moisture is evaporated is put respectively
Enter in Muffle furnace 600 DEG C of sintering 12h to get to required powder body material 2.
Powder body material 2 is filled up in the groove of metal tray 1, then powder body material 2 is compacted to get to institute with tablet press machine
Need powder magnetic control sputtering target.Finally the powder magnetic control sputtering target of preparation is fitted on the cathode 5 in magnetron sputtering apparatus, carries out powder
Body magnetron sputtering plating.
Claims (3)
1. a kind of powder magnetic control sputtering device, which is characterized in that the device includes metal tray, powder body material and magnetic controlled sputtering target
System；
The magnetron sputtering target system, including permanent magnet (1) and chip bench (9)；The both ends of the permanent magnet (1) point
Not Wei permanent magnet N pole a (2) and permanent magnet N pole b (4), centre be the poles permanent magnet S (3)；The permanent magnet (1) and
Magnetic field (7) and electric field (8) are formed between chip bench (9), the cathode (5) and anode (6) in electric field (8) are located at permanent magnet (1)
Top；Cathode (5) collectively constitutes Ion Sputter Magnetron Gun with permanent magnet (1)；The angle of inclination for controlling Ion Sputter Magnetron Gun, avoids splashing
Powder body material falls off during penetrating；
The metal tray, Intermediate Gray is fluted, is made of metal material of the heat conduction without magnetic, and raised groove edge is located at magnetic
The anode (6) of control sputtering target system generates pollution, and guarantee fund to film outside, to avoid the sputtering of powder body material in metal tray
Belonging to has good electrical contact between pallet and cathode (5)；
The powder body material, in the groove of metal tray, compacting forms powder sputtering target, powder sputtering target is installed
On the cathode (5) of magnetron sputtering target system, powder magnetic control sputtering coating is carried out.
2. a kind of powder magnetic control sputtering device according to claim 1, which is characterized in that the material of the metal tray
Thickness for stainless steel or copper, metal tray bottom is not more than 1mm, depth of groove 3-5mm.
3. a kind of powder magnetic control sputtering device according to claim 1 or 2, which is characterized in that the powder body material is
Material needed for film preparation is obtained by mechanical mixture or chemical mixing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810255410.9A CN108411264A (en) | 2018-03-19 | 2018-03-19 | A kind of powder magnetic control sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810255410.9A CN108411264A (en) | 2018-03-19 | 2018-03-19 | A kind of powder magnetic control sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108411264A true CN108411264A (en) | 2018-08-17 |
Family
ID=63133480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810255410.9A Withdrawn CN108411264A (en) | 2018-03-19 | 2018-03-19 | A kind of powder magnetic control sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108411264A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60121269A (en) * | 1983-12-05 | 1985-06-28 | Matsushita Electric Ind Co Ltd | Sputtering device |
| CN1948545A (en) * | 2006-09-15 | 2007-04-18 | 华东理工大学 | Single target sputter method for preparing bismuth telluride thin film using powder target material |
| CN101748362A (en) * | 2008-12-09 | 2010-06-23 | 上海广电电子股份有限公司 | Preparation methods of ZnO base powder target and thin film transistor active layer |
| CN102839348A (en) * | 2012-09-27 | 2012-12-26 | 攀枝花学院 | Method for preparing fluorine-doped tin oxide thin film |
-
2018
- 2018-03-19 CN CN201810255410.9A patent/CN108411264A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60121269A (en) * | 1983-12-05 | 1985-06-28 | Matsushita Electric Ind Co Ltd | Sputtering device |
| CN1948545A (en) * | 2006-09-15 | 2007-04-18 | 华东理工大学 | Single target sputter method for preparing bismuth telluride thin film using powder target material |
| CN101748362A (en) * | 2008-12-09 | 2010-06-23 | 上海广电电子股份有限公司 | Preparation methods of ZnO base powder target and thin film transistor active layer |
| CN102839348A (en) * | 2012-09-27 | 2012-12-26 | 攀枝花学院 | Method for preparing fluorine-doped tin oxide thin film |
Non-Patent Citations (1)
| Title |
|---|
| 周艳文等: ""粉末靶脉冲磁控溅射制备CrBMoS固体润滑硬质涂层"", 《真空科学与技术学报》 * |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180817 |
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| WW01 | Invention patent application withdrawn after publication |