CN108409310A - The ceramic base PCB copper-clad plates and preparation method that a kind of graphene is modified - Google Patents
The ceramic base PCB copper-clad plates and preparation method that a kind of graphene is modified Download PDFInfo
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- CN108409310A CN108409310A CN201810563670.2A CN201810563670A CN108409310A CN 108409310 A CN108409310 A CN 108409310A CN 201810563670 A CN201810563670 A CN 201810563670A CN 108409310 A CN108409310 A CN 108409310A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 239000000919 ceramic Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011889 copper foil Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims description 24
- 238000007731 hot pressing Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 12
- 238000003825 pressing Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 244000137852 Petrea volubilis Species 0.000 claims description 4
- 238000000498 ball milling Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- 239000004575 stone Substances 0.000 description 5
- 150000001336 alkenes Chemical class 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- -1 graphite alkene Chemical class 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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Abstract
The invention discloses the ceramic-PTFE base PCB copper-clad plates that a kind of graphene is modified, including ceramic base prepreg, copper foil；One layer of chemical vapor deposition graphene is equipped between ceramic base prepreg, copper foil.Or the two sides of ceramic base prepreg is all one layer of chemical vapor deposition graphene, the outside of graphene is copper foil.The potsherd that wherein graphene is modified is by the method for chemical vapor deposition by the surface of graphene growth to potsherd.Then copper foil is invested by prepreg both sides by hot-press method.The ceramic base PCB copper-clad plates prepared by the method make the calorifics of copper-clad plate, electrical and mechanical performance greatly improve since there are graphenes between potsherd and copper foil.
Description
Technical field
The present invention relates to a kind of preparation methods of new ceramics base PCB copper-clad plates, belong to the preparation field of PCB copper-clad plates.
Background technology
Printed circuit board (Printed Circuit Board, PCB) is important electronic unit, is electronic component
Supporter is the carrier of electronic component electrical connection.With being constantly progressive for electronic information technology development, electronic equipment high frequency
Change is development trend, especially as wireless network, satellite communication it is growing, information products constantly move towards at a high speed and high frequency
Change.Development new generation product is required for frequency PCB plate, the especially communication products such as satellite system, mobile phone reception base station necessary
It using high-frequency circuit board, applies with these and is rapidly developed within the coming years, can have wilderness demand to frequency PCB plate.
Ceramic base copper-clad plate is widely used in the fields PCB.Ceramic base copper-clad plate has high resistance, excellent high frequency
The advantages that performance, high-heat performance, good chemically and thermally stability, high-melting-point.These advantages are all design of electronic circuits and production
In it is required.Graphene is a kind of two-dimension plane structure by carbon atom hexagonal accumulation group face.Due to its with excellent calorifics,
The performances such as electricity, machinery, recent years, heat was concerned.The prepreg of PCB copper-clad plates needs excellent hot property and mechanicalness
Can, copper foil needs excellent electric property again.Therefore, we are dedicated to improving the heat of PCB copper-clad plates by introducing graphene
It learns, electrical and mechanical performance.It is 5G communication times high-frequency copper-clad plates to greatly improve the performance of common PCB copper-clad plates now
Contribution strength.
Invention content
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention provides what a kind of novel graphite alkene was modified
Ceramic base PCB copper-clad plates and preparation method, the main potsherd and copper foil being modified including graphene, concrete structure are as shown in Figure 1.
The potsherd that wherein graphene is modified is by the method for chemical vapor deposition by graphene growth to the surface of ceramic piece.So
Copper foil is invested by potsherd both sides by hot-press method afterwards.The PCB copper-clad plates prepared by the method, due to potsherd and copper foil
Between there are graphenes, therefore the calorifics of copper-clad plate, electrical and mechanical performance is made to greatly improve.
To achieve the above object, the technical solution adopted by the present invention is：The ceramic-PTFE base PCB that a kind of graphene is modified covers
Copper coin, including ceramic base prepreg, copper foil 3；One layer of chemical vapor deposition stone is equipped between ceramic base prepreg 1, copper foil
Black alkene；
The ceramic-PTFE base PCB copper-clad plates that another graphene is modified, including ceramic base prepreg, copper foil；Ceramic base
The two sides of prepreg is all one layer of chemical vapor deposition graphene, and the outside of graphene is copper foil；
The ceramic base PCB copper-clad plate preparation methods that a kind of graphene is modified, include the following steps：
S1：By weight, 98-98.5 parts of Al are weighed2O3Powder, 0.2-0.5 parts of MgO powders, 0.3-0.6 parts of CaO powders,
0.9-1 parts of SiO2The grain size of powder, powder is necessarily less than 0.5 micron, and load weighted powder is put into ball mill, is added
500ml alcohol, with 200-300r/min speed, ball milling 5-7 hours.
S2：The mixture that will be obtained in step S2, it is dry-pressing formed with the pressure of 2-3MPa with dry-pressing formed machine after drying.
S3：The ceramic body obtained in step S2 is positioned in Muffle, is sintered 10-12 hours with 920-960 DEG C.
S4：The ceramics obtained in step S3 are cut to required thickness, are used in combination 2000 mesh sand paper to be polishing to smooth.
S5：The potsherd obtained by step S4 methods is positioned in chemical vapor depsotition equipment cavity, stone is carried out
Black alkene growth.
S6：The upper and lower surface of the sample obtained in step S5 is put into copper foil, is put into hot pressing furnace and carries out hot pressing.Hot pressing item
Part is that vacuum degree is extracted into more than 1 × 10-3It after mbar, starts to warm up, temperature-rise period is first quickly to be raised to 150 with 30-50 minutes
DEG C, then 380-405 DEG C is warming up to 90-100 minutes.Soaking time is 120-180 minutes.The process of pressurization is divided into two
Step, it is 2-3MPa that temperature-rise period, which applies pressure, and it is 2.5-3.5MPa that insulating process, which applies pressure,.
S7：After step S6 processes, it is naturally cooling to room temperature, then release, release speed should be less than 0.1MPa/s.It will
The ceramic base PCB copper-clad plates that the graphene pressed is modified are taken out from hot pressing furnace, obtain desired sample to the end.
The operation principle of the present invention is that：The method that chemical vapor deposition is used between potsherd and copper foil is grown into graphene,
The excellent properties of logical graphene, greatly improve electricity, calorifics and the mechanical performance of copper-clad plate.
Further, in the step S5, during graphene growth, chemical vapor depsotition equipment vacuum degree should be greater than 5
×10-4Mbar, growth temperature are 375-380 DEG C.
Copper-clad plate performance test analysis is obtained in 1 Examples 1 and 2 of table
Advantageous effect：The preparation method for the ceramic base PCB copper-clad plates that a kind of novel graphite alkene provided by the invention is modified, phase
For the prior art, has the following advantages：(1) manufacture craft is simple, and cost is relatively low, and the operation cycle is short, and Repeatability is good, is suitble to
Volume production；(2) by growing graphene with chemical vapor deposition method between ceramic base copper-clad plate prepreg and copper foil, to
So that the calorifics of copper-clad plate, electrical and mechanical performance greatly promote, lay the first stone to the requirements at the higher level of pcb board for the 5G epoch.And
Common PCB media are FR4 materials, and the dielectric constant of relative atmospheric is 4.2-4.7.This dielectric constant is to become with temperature
Change, within the temperature range of 0-70 degree, maximum changing range can reach 20%.The variation of dielectric constant can lead to circuit
The variation of delay 10%, temperature is higher, and delay is bigger.Dielectric constant can also change with signal frequency, and frequency gets over high-k
It is smaller.100M or less can use capacitance and delay between 4.5 computing boards.The biography of interior layer signal in the pcb board of general FR4 materials
Defeated speed is 180ps/inch (1inch=1000mil=2.54cm).
Description of the drawings
Fig. 1 is schematic structural view of the invention.
Specific implementation mode
The present invention is further described with reference to embodiment.
As shown, 31 be upper copper；21 be upper layer graphene (thickness is within 40-200nm)；1 is ceramic substrate；
22 be lower layer graphene (thickness is within 40-200nm)；32 be lower copper foil.
Embodiment 1：
A kind of preparation method for the ceramic base PCB copper-clad plates that novel graphite alkene is modified, includes the following steps：
S1：By weight, 98 parts of Al are weighed2O3Powder, 0.5 part of MgO powder, 0.6 part of CaO powder, 0.9 part of SiO2Powder,
The grain size of powder is 0.3 ± 0.05 micron, and load weighted powder is put into ball mill, 500ml alcohol is added, with 300r/min
Speed, ball milling 6 hours.
S2：The mixture that will be obtained in step S2, it is dry-pressing formed with the pressure of 3MPa with dry-pressing formed machine after drying.
S3：The ceramic body obtained in step S2 is positioned in Muffle, is sintered 10 hours with 960 DEG C.
S4：The ceramics obtained in step S3 are cut to required thickness, are used in combination 2000 mesh sand paper to be polishing to smooth.
S5：The potsherd obtained by step S4 methods is positioned in chemical vapor depsotition equipment cavity, stone is carried out
Black alkene growth.During graphene growth, chemical vapor depsotition equipment vacuum degree is 2 × 10-4Mbar, growth temperature are 378 DEG C.
S6：The upper and lower surface of the sample obtained in step S5 is put into copper foil, is put into hot pressing furnace and carries out hot pressing.Hot pressing item
Part is that vacuum degree is extracted into 2 × 10-4It after mbar, starts to warm up, temperature-rise period is first quickly to be raised to 150 DEG C with 50 minutes, is then used
100 minutes are warming up to 402 DEG C.Soaking time is 150 minutes.The process of pressurization is divided into two steps, and temperature-rise period applies pressure
For 2MPa, it is 2.5MPa that insulating process, which applies pressure,.
S7：After step S6 processes, it is naturally cooling to room temperature, then release, release speed is 0.05MPa/s.It will pressure
The ceramic base PCB copper-clad plates that the graphene got togather is modified are taken out from hot pressing furnace, obtain desired sample to the end.
Embodiment 2：
A kind of preparation method for the ceramic base PCB copper-clad plates that novel graphite alkene is modified, includes the following steps：
S1：By weight, 98.5 parts of Al are weighed2O3Powder, 0.3 part of MgO powder, 0.3 part of CaO powder, 0.9 part of SiO2Powder
The grain size of body, powder is 0.3 ± 0.05 micron, and load weighted powder is put into ball mill, 500ml alcohol is added, with 300r/
Min speed, ball milling 6 hours.
S2：The mixture that will be obtained in step S2, it is dry-pressing formed with the pressure of 3MPa with dry-pressing formed machine after drying.
S3：The ceramic body obtained in step S2 is positioned in Muffle, is sintered 10 hours with 960 DEG C.
S4：The ceramics obtained in step S3 are cut to required thickness, are used in combination 2000 mesh sand paper to be polishing to smooth.
S5：The potsherd obtained by step S4 methods is positioned in chemical vapor depsotition equipment cavity, stone is carried out
Black alkene growth.During graphene growth, chemical vapor depsotition equipment vacuum degree is 2 × 10-4Mbar, growth temperature are 380 DEG C.
S6：The upper and lower surface of the sample obtained in step S5 is put into copper foil, is put into hot pressing furnace and carries out hot pressing.Hot pressing item
Part is that vacuum degree is extracted into 1 × 10-4It after mbar, starts to warm up, temperature-rise period is first quickly to be raised to 150 DEG C with 50 minutes, is then used
100 minutes are warming up to 395 DEG C.Soaking time is 180 minutes.The process of pressurization is divided into two steps, and temperature-rise period applies pressure
For 3MPa, it is 3.5MPa that insulating process, which applies pressure,.
S7：After step S6 processes, it is naturally cooling to room temperature, then release, release speed is 0.05MPa/s.It will pressure
The ceramic base PCB copper-clad plates that the graphene got togather is modified are taken out from hot pressing furnace, obtain desired sample to the end.
The hot of ceramic base PCB copper-clad plates, electricity and the machine being modified by the graphene that embodiment 1 and embodiment 2 obtain
Tool performance is as shown in table 1.
The above is only a preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (5)
1. the ceramic-PTFE base PCB copper-clad plates that a kind of graphene is modified, which is characterized in that including ceramic base prepreg, copper foil；
One layer of chemical vapor deposition graphene is equipped between ceramic base prepreg, copper foil.
2. the ceramic-PTFE base PCB copper-clad plates that a kind of graphene is modified, which is characterized in that including ceramic base prepreg, copper foil；
The two sides of ceramic base prepreg is all one layer of chemical vapor deposition graphene, and the outside of graphene is copper foil.
3. the ceramic base PCB copper-clad plate preparation methods that a kind of graphene according to claim 1 is modified, which is characterized in that
Include the following steps：
S5：Potsherd is positioned in chemical vapor depsotition equipment cavity, carries out graphene growth, is grown in one side or two faces
Graphene；
S6：The upper and lower surface of the sample obtained in step S5 is put into copper foil, is put into hot pressing furnace and carries out hot pressing；Hot pressing condition
For vacuum degree is extracted into more than 1 × 10-3After mbar, starting to warm up, temperature-rise period is first quickly to be raised to 150 DEG C with 30-50 minutes,
Then it is warming up to 380-405 DEG C with 90-100 minutes.Soaking time is 120-180 minutes；The process of pressurization is divided into two steps,
It is 2-3MPa that temperature-rise period, which applies pressure, and it is 2.5-3.5MPa that insulating process, which applies pressure,；
S7：After step S6 processes, it is naturally cooling to room temperature, then release, release speed should be less than 0.1MPa/s；It will pressing
The ceramic base PCB copper-clad plates that good graphene is modified are taken out from hot pressing furnace, obtain finished product.
4. the ceramic base PCB copper-clad plates being modified according to a kind of graphene described in claim 2, which is characterized in that the step
In rapid S5, during graphene growth, chemical vapor depsotition equipment vacuum degree is more than 5 × 10-4Mbar, growth temperature 375-
380℃。
5. the ceramic base PCB copper-clad plates that a kind of graphene according to one of claim 1-2 is modified, which is characterized in that system
Preparation Method includes the following steps：
S1：By weight, 98-98.5 parts of Al are weighed2O3Powder, 0.2-0.5 parts of MgO powders, 0.3-0.6 parts of CaO powders, 0.9-1
Part SiO2The grain size of powder, powder is less than 0.5 micron, and load weighted powder is put into ball mill, and 500ml alcohol is added, with
200-300r/min speed, ball milling 5-7 hours；
S2：The mixture that will be obtained in step S2, it is dry-pressing formed with the pressure of 2-3MPa with dry-pressing formed machine after drying；
S3：The ceramic body obtained in step S2 is positioned in Muffle, is sintered 10-12 hours with 920-960 DEG C；
S4：The ceramics obtained in step S3 are cut to required thickness, are used in combination 2000 mesh sand paper to be polishing to smooth.
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| CN110372410A (en) * | 2019-07-31 | 2019-10-25 | 成都工业学院 | A kind of metal-ceramic composite material and preparation method thereof |
| CN111976237A (en) * | 2020-09-01 | 2020-11-24 | 无锡睿龙新材料科技有限公司 | Low-dielectric-constant nano-ceramic-filled high-frequency copper-clad plate and preparation method thereof |
| CN113225901A (en) * | 2021-05-12 | 2021-08-06 | 四川锐宏电子科技有限公司 | Multilayer thick film ceramic-based circuit board and preparation process thereof |
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| CN111976237B (en) * | 2020-09-01 | 2021-03-12 | 无锡睿龙新材料科技有限公司 | Low-dielectric-constant nano-ceramic-filled high-frequency copper-clad plate and preparation method thereof |
| CN113225901A (en) * | 2021-05-12 | 2021-08-06 | 四川锐宏电子科技有限公司 | Multilayer thick film ceramic-based circuit board and preparation process thereof |
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