CN108400212A - A kind of manufacturing method of diode - Google Patents
A kind of manufacturing method of diode Download PDFInfo
- Publication number
- CN108400212A CN108400212A CN201810308660.4A CN201810308660A CN108400212A CN 108400212 A CN108400212 A CN 108400212A CN 201810308660 A CN201810308660 A CN 201810308660A CN 108400212 A CN108400212 A CN 108400212A
- Authority
- CN
- China
- Prior art keywords
- manufacturing
- layer
- epitaxial wafer
- metal layer
- negative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Abstract
The invention discloses a kind of manufacturing method of diode, manufacturing method includes the following steps：It grows luminescent layer and positive and negative two link electrodes successively on substrate, produces LED epitaxial slice；Layer of Au metal layer is deposited on the surface of epitaxial wafer, anneals again after vapor deposition, erodes the metal layer after annealing with chloroazotic acid, hydrochloric acid or nitric acid；The Au metal layers for removing the covering of epitaxial wafer surface, thereby realize the roughening treatment to LED surface；Positive and negative two contacts electrode is made respectively；Epitaxial wafer is cut into light-emitting diode chip for backlight unit, the present invention is under the premise of ensureing not destroy epitaxial structure, on the one hand simple method can be utilized to realize the roughening of semiconductor light emitting layer surface, on the other hand the good control that roughing in surface effect may be implemented, makes the brightness of light emitting diode be significantly improved.
Description
Technical field
The present invention relates to electronic component manufacturing technology field more particularly to a kind of manufacturing methods of diode.
Background technology
Light emitting diode has many advantages, such as power saving, environmental protection and long lifespan.At present the whole world be in energy shortages when
Generation, therefore the various preparation methods of light emitting diode are widely studied.Roughing in surface is as a kind of raising device light emitting efficiency
A kind of means have been widely used, and the limited brightness of single LED crystal particle need to combine multiple light emitting diode ability
Meet highlight illumination demand.
Invention content
In consideration of it, the present invention provides a kind of manufacturing method of diode, manufacturing method includes the following steps：
Step 1：It grows luminescent layer and positive and negative two link electrodes successively on substrate, produces LED epitaxial slice；
Step 2：Layer of Au metal layer is deposited on the surface of epitaxial wafer, anneals again after vapor deposition, after annealing with chloroazotic acid,
Hydrochloric acid or nitric acid erode the metal layer；
Step 3：The Au metal layers for removing the covering of epitaxial wafer surface, thereby realize at the roughening to LED surface
Reason；
Step 4：Positive and negative two contacts electrode is made respectively；
Step 5：Epitaxial wafer is cut into light-emitting diode chip for backlight unit.
The present invention is further described, the material of the metal layer is in Au, Sn, Ge, Be, Ti, Al or In
A kind of or two of which metal alloy.
Using above-mentioned technical proposal, have the advantages that：
On the one hand the present invention can utilize simple method to realize semiconductor light emitting under the premise of ensureing not destroy epitaxial structure
On the other hand the roughening of layer surface may be implemented the good control of roughing in surface effect, the brightness of light emitting diode made to be shown
It writes and improves.
Specific implementation mode
Embodiment 1：A kind of manufacturing method of diode, manufacturing method include the following steps：
Step 1：It grows luminescent layer and positive and negative two link electrodes successively on substrate, produces LED epitaxial slice；
Step 2：Layer of Au metal layer is deposited on the surface of epitaxial wafer, anneals again after vapor deposition, after annealing with chloroazotic acid,
Hydrochloric acid or nitric acid erode the metal layer；
Step 3：The metal layer for removing the Au and Be of the covering of epitaxial wafer surface, thereby realizes to LED surface
Roughening treatment；
Step 4：Positive and negative two contacts electrode is made respectively；
Step 5：Epitaxial wafer is cut into light-emitting diode chip for backlight unit.
The present invention is further described, the material of the metal layer is in Au, Sn, Ge, Be, Ti, Al or In
A kind of or two of which metal alloy.
Embodiment 2：A kind of manufacturing method of diode, manufacturing method include the following steps：
Step 1：It grows luminescent layer and positive and negative two link electrodes successively on substrate, produces LED epitaxial slice；
Step 2：Layer of Au metal layer is deposited on the surface of epitaxial wafer, anneals again after vapor deposition, after annealing with chloroazotic acid,
Hydrochloric acid or nitric acid erode the metal layer；
Step 3：The metal layer for removing the Ti and Al of the covering of epitaxial wafer surface, thereby realizes to LED surface
Roughening treatment；
Step 4：Positive and negative two contacts electrode is made respectively；
Step 5：Epitaxial wafer is cut into light-emitting diode chip for backlight unit.
On the one hand the present invention can utilize simple method to realize semiconductor light emitting under the premise of ensureing not destroy epitaxial structure
On the other hand the roughening of layer surface may be implemented the good control of roughing in surface effect, the brightness of light emitting diode made to be shown
It writes and improves.
The foregoing describe the basic principles and main features of the present invention, It should be understood by those skilled in the art that of the invention
It is not restricted to the described embodiments, the above embodiments and description only illustrate the principle of the present invention, is not departing from
Under the premise of spirit and scope of the invention, various changes and improvements may be made to the invention, these changes and improvements both fall within requirement
In the scope of the invention of protection, invents claimed range and be defined by the appending claims and its equivalent thereof.
Claims (2)
1. a kind of manufacturing method of diode, which is characterized in that manufacturing method includes the following steps：
Step 1：It grows luminescent layer and positive and negative two link electrodes successively on substrate, produces LED epitaxial slice；
Step 2：Layer of Au metal layer is deposited on the surface of epitaxial wafer, anneals again after vapor deposition, after annealing with chloroazotic acid,
Hydrochloric acid or nitric acid erode the metal layer；
Step 3：The Au metal layers for removing the covering of epitaxial wafer surface, thereby realize at the roughening to LED surface
Reason；
Step 4：Positive and negative two contacts electrode is made respectively；
Step 5：Epitaxial wafer is cut into light-emitting diode chip for backlight unit.
2. a kind of manufacturing method of diode according to claim 1, which is characterized in that the material of the metal layer selects
From a kind of or two of which metal alloy in Au, Sn, Ge, Be, Ti, Al or In.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810308660.4A CN108400212A (en) | 2018-04-09 | 2018-04-09 | A kind of manufacturing method of diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810308660.4A CN108400212A (en) | 2018-04-09 | 2018-04-09 | A kind of manufacturing method of diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108400212A true CN108400212A (en) | 2018-08-14 |
Family
ID=63099788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810308660.4A Pending CN108400212A (en) | 2018-04-09 | 2018-04-09 | A kind of manufacturing method of diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108400212A (en) |
-
2018
- 2018-04-09 CN CN201810308660.4A patent/CN108400212A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180814 |
|
| WD01 | Invention patent application deemed withdrawn after publication |