CN108400211B - Light-emitting diode with multiple wavelengths - Google Patents
Light-emitting diode with multiple wavelengths Download PDFInfo
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- CN108400211B CN108400211B CN201810146423.2A CN201810146423A CN108400211B CN 108400211 B CN108400211 B CN 108400211B CN 201810146423 A CN201810146423 A CN 201810146423A CN 108400211 B CN108400211 B CN 108400211B
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- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007771 core particle Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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Abstract
The invention relates to a light-emitting diode with multiple wavelengths, which at least comprises a substrate with a plurality of regions and epitaxial layers corresponding to the substrate with the regions, wherein the epitaxial layers comprise a first semiconductor layer, an active layer and a second semiconductor layer, the substrate with the regions has patterns with different heights and intervals, the active layers corresponding to the epitaxial layers with the regions have different In contents and light-emitting wavelengths, and the epitaxial layers emitting light with the multiple wavelengths can be formed on the same substrate only by changing the patterns of the substrate.
Description
Technical Field
The invention relates to the field of light emitting diodes, in particular to a light emitting diode with multiple wavelengths.
Background
Light Emitting Diodes (LEDs) are widely used in various Light sources such as backlight, illumination, car lights, decoration, displays, etc. due to their high efficiency. In the prior art, the wavelength of light emitted by an active layer is adjusted mainly by adjusting the components and the growth temperature of the active layer of the light emitting diode, and if the light emitting diodes with various wavelengths are required to be arranged at an application end, the manufacturing process is complex.
Disclosure of Invention
In order to solve the problems in the background art, the present invention is directed to a light emitting diode with multiple wavelengths, which simplifies the manufacturing process of the conventional light emitting diode with multiple wavelengths to realize a light emitting diode with multiple wavelengths.
In order to achieve the purpose, the invention discloses a light emitting diode with multiple wavelengths, which at least comprises a substrate with a plurality of regions and epitaxial layers corresponding to the substrate of each region, wherein each epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer, the substrate of each region has substrate patterns with different heights and different intervals on the surface contacting with the epitaxial layer, the active layer of the epitaxial layer corresponding to the substrate of each region has different In content, and the epitaxial layers corresponding to the substrates of each region are excited to have different light emitting wavelengths.
According to the invention, the light-emitting wavelength comprises ultraviolet wavelength, blue light wavelength, green light wavelength, red light wavelength, infrared wavelength or any combination of the above wavelengths, namely the excited light can cover the full color system wavelength.
In some embodiments, the height of the substrate pattern corresponding to the blue light wavelength is preferably 1.5-2.0 μm.
According to this embodiment, the pitch of the substrate patterns corresponding to the blue light wavelength is preferably 1.8 to 2.2 μm.
According to the embodiment, the content of In the active layer of the epitaxial layer corresponding to the blue light wavelength is preferably 18% -22%.
In some embodiments, the substrate pattern has a height of 0.5-1.5 μm corresponding to the green wavelength.
According to this embodiment, it is preferable that the substrate patterns corresponding to the green light wavelength have a pitch of 0.8 to 1.2 μm.
According to the embodiment, the content of the active layer In of the epitaxial layer corresponding to the green light wavelength is preferably 30% -35%.
In some embodiments, it is preferable that a barrier layer is disposed between the epitaxial layers corresponding to the substrates of the respective regions.
According to this embodiment, it is preferable that the barrier material is SiO2Or SiNx。
According to this embodiment, it is preferable that the barrier layer is higher than the lower of the adjacent substrate patterns.
In some embodiments, it is preferred that there be trenches between the substrates of the regions.
According to the present invention, it is preferable that the active layer includes InGaN.
According to the present invention, the chip size of the light emitting diode is preferably within 100 μm by 100 μm, i.e. the present invention can be applied to the fabrication of micro light emitting diodes.
According to the present invention, it is preferable that the InGaN lattice constant of the active layer of the epitaxial layer is different for each region of the substrate.
According to the present invention, preferably, the substrate pattern comprises a prism, a right square column, a circular truncated cone, a cylinder, a cone, a pyramid, a hemisphere or any combination of the foregoing.
According to the present invention, it is preferable that the InGaN lattice constant of the active layer of the epitaxial layer is different for each region of the substrate.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. Furthermore, the drawing figures are for a descriptive summary and are not drawn to scale.
FIG. 1 is a schematic view of a first embodiment of an LED;
FIG. 2 is a schematic view of a second embodiment of an LED;
FIG. 3 is a schematic view of a third embodiment of an LED;
fig. 4 is a schematic view of a fourth embodiment of a light emitting diode.
The figures are numbered: 100. the semiconductor device comprises a substrate 111-112, a substrate pattern 200, a first semiconductor layer 300, an active layer 400, a second semiconductor layer 500, a barrier layer 600, a groove 700 and a wavelength conversion material.
Detailed Description
Several embodiments of the present invention will be described in further detail below with reference to the accompanying drawings. The following description and illustrations of the embodiments do not limit the scope of the present invention in any way.
It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," when used in this specification, specify the presence of stated features, integers, steps, components, and/or groups, but do not preclude the presence or addition of one or more other features, integers, steps, components, groups, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The invention provides a light-emitting diode with multiple wavelengths, which simplifies the manufacturing process of the conventional light-emitting diode with multiple wavelengths and realizes the manufacture of a light-emitting diode device integrating light emission with multiple wavelengths.
The invention discloses a light-emitting diode with multiple wavelengths, which at least comprises a substrate 100 with a plurality of regions and epitaxial layers corresponding to the substrate In each region, wherein each epitaxial layer comprises a first semiconductor layer 200, an active layer 300 and a second semiconductor layer 400, the substrate In each region has substrate patterns with different heights and different intervals on the surface contacting with the epitaxial layer, the active layer 300 of the epitaxial layer corresponding to the substrate In each region has different In content, and the epitaxial layers corresponding to the substrate In each region are excited to have different light-emitting wavelengths. Different epitaxial material lattices are formed by different stacking stresses of the epitaxial semiconductor materials caused by the change of the bottom layer patterns, In components are different during stacking according to the different sizes of the lattices, and the deviation of optical wavelength is excited during the formation of epitaxial stacking.
According to the invention, on the same substrate 100, the epitaxial layer grown simultaneously can contain multiple light emitting wavelengths without additional epitaxial growth steps, the light emitting wavelengths include ultraviolet wavelengths, blue light wavelengths, green light wavelengths, red light wavelengths, infrared wavelengths or any combination of the above wavelengths, that is, the excited light can cover the full color system wavelength, and the combination requirements of different wavelengths on the same light emitting diode core particle are met.
Referring to fig. 1, a first embodiment of the present invention is a light emitting diode, a light emitting diode with multiple wavelengths, a substrate having at least several regions and an epitaxial layer corresponding to the substrate of each region, wherein a surface of the substrate 100 contacting the epitaxial layer has a substrate pattern, and the substrate pattern includes a truncated pyramid, a rectangular prism, a truncated cone, a circular cone, a conical pyramid, a semi-sphere or a semi-sphereAny combination of the foregoing. The epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer, the active layer comprises InGaN, the active layer is preferably of a multiple quantum well structure of InGaN/GaN, light emitted by the epitaxial layer corresponding to the substrate in at least one region is excited to be blue light wavelength of 400-480 nm, in order to achieve the wavelength, the substrate pattern is preferably conical, and the height h of the substrate pattern 111 corresponding to the blue light wavelength is preferably equal to the height h of the substrate patternB1.5-2.0 μm, and a distance d of the substrate pattern 111 corresponding to the blue light wavelengthB1.8 to 2.2 μm. And In the growth interface provided by the substrate pattern 111, the In content of the active layer of the corresponding epitaxial layer is 18% -22% In the final growth.
In this embodiment, the epitaxial layer corresponding to the substrate having one region is excited to emit light with a green wavelength of 500-560 nm, preferably, the substrate pattern 112 is conical, and the height h of the substrate pattern 112 corresponding to the green wavelength is greater than the height h of the substrate pattern 112 corresponding to the green wavelengthG0.5-1.5 μm, and a distance d of the substrate patterns 112 corresponding to the green light wavelengthG0.8 to 1.2 μm. The In content of the active layer of the epitaxial layer corresponding to the green light wavelength is 30-35%.
As a whole, it can be seen that the light emitting diode with both blue light and green light emitted after being electrically excited can be manufactured by epitaxial growth on the same substrate 100 at least by changing the substrate pattern in the present embodiment.
Referring to fig. 2, in a second embodiment of the present invention, on the basis of the above-mentioned led epitaxial structure, a barrier layer 500 is disposed between the epitaxial layers corresponding to the substrates in each region, and the barrier layer 500 is used to avoid or reduce the mutual interference of the epitaxial bottom materials during growth. The barrier layer 500 provided in this embodiment is made of SiO2Or SiNx. Barrier layer 500 is higher than the lower of the adjacent substrate patterns, substantially achieving good immunity to interference.
Similar to the effect of the barrier layer 500, the present invention provides an embodiment, based on the first embodiment, with a trench 600 between the substrates of the regions, and the trench 600 provides a certain anti-interference effect.
Referring to fig. 3, the third embodiment of the present invention is to apply the above embodiments to a microchip with a chip size of led within 100 μm × 100 μm, and integrate the epitaxial layers with different wavelengths onto one micro led chip by the simultaneous growth technique of the present invention.
Referring to fig. 4, a fourth embodiment of the present invention provides a light emitting device, which may be a light emitting assembly or a light emitting package composed of light emitting diodes, and is based on embodiment 1, in which a wavelength conversion material 700 is disposed in a region of a portion of a blue epitaxial layer corresponding to a light emitting device, for example, the embodiment covers the wavelength conversion material 700 above a second semiconductor layer, and converts a portion of blue light or green light into red light, and a commonly used wavelength conversion material, for example, a phosphor. The same core particle can be used to realize the display function of three primary colors of red, green and blue.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (9)
1. The utility model provides a light emitting diode with multiple wavelength, at least substrate and epitaxial layer, the substrate surface has a plurality of figures, and the epitaxial layer includes first semiconductor layer, active layer and second semiconductor layer, and the epitaxial layer corresponds with first region and second regional substrate, and the material of active layer includes InGaN, its characterized in that:
the epitaxial layer corresponding to the first area is excited to emit blue light, the epitaxial layer corresponding to the second area is excited to emit green light,
the pattern of the first area and the pattern of the second area are conical, the pattern of the first area has a first height and a first interval, the pattern of the second area has a second height and a second interval, the pattern height of the first area is 1.5-2.0 mu m, the pattern interval of the first area is 1.8-2.2 mu m, the pattern height of the second area is 0.5-1.5 mu m, and the pattern interval of the second area is 0.8-1.2 mu m.
2. The light-emitting diode with multiple wavelengths as claimed in claim 1, wherein: the In content of the active layer of the epitaxial layer corresponding to the blue light wavelength is 18% -22%.
3. The light-emitting diode with multiple wavelengths as claimed in claim 1, wherein: the In content of the active layer of the epitaxial layer corresponding to the green light wavelength is 30-35%.
4. The light-emitting diode with multiple wavelengths as claimed in claim 1, wherein: and a barrier layer is arranged between the epitaxial layers corresponding to the substrates in each region.
5. The light-emitting diode with multiple wavelengths as claimed in claim 4, wherein: the material of the barrier layer is SiO2Or SiNx。
6. The light-emitting diode with multiple wavelengths as claimed in claim 4, wherein: the barrier layer is higher than the lower of the adjacent substrate patterns.
7. The light-emitting diode with multiple wavelengths as claimed in claim 1, wherein: the substrate of each region has a trench therebetween.
8. The light-emitting diode with multiple wavelengths as claimed in claim 1, wherein: the chip size of the light emitting diode is within 100 μm.
9. The light-emitting diode with multiple wavelengths as claimed in claim 1, wherein: the substrate of each region has different InGaN lattice constants of the active layers of the epitaxial layers.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810146423.2A CN108400211B (en) | 2018-02-12 | 2018-02-12 | Light-emitting diode with multiple wavelengths |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810146423.2A CN108400211B (en) | 2018-02-12 | 2018-02-12 | Light-emitting diode with multiple wavelengths |
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| CN108400211A CN108400211A (en) | 2018-08-14 |
| CN108400211B true CN108400211B (en) | 2021-03-26 |
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| WO2012059837A1 (en) * | 2010-11-04 | 2012-05-10 | Koninklijke Philips Electronics N.V. | Solid state light emitting devices based on crystallographically relaxed structures |
| DE102017109812A1 (en) * | 2016-05-13 | 2017-11-16 | Osram Opto Semiconductors Gmbh | Light-emitting semiconductor chip and method for producing a light-emitting semiconductor chip |
| CN106784194A (en) * | 2017-01-06 | 2017-05-31 | 上海应用技术大学 | A kind of method for preparing single-chip ultra wide band white light LEDs |
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