CN108400201A - A kind of lithographic method of polysilicon surface pyramid matte - Google Patents
A kind of lithographic method of polysilicon surface pyramid matte Download PDFInfo
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- CN108400201A CN108400201A CN201810210305.3A CN201810210305A CN108400201A CN 108400201 A CN108400201 A CN 108400201A CN 201810210305 A CN201810210305 A CN 201810210305A CN 108400201 A CN108400201 A CN 108400201A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 107
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005530 etching Methods 0.000 claims abstract description 60
- 239000002253 acid Substances 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 238000004140 cleaning Methods 0.000 claims abstract description 19
- 239000003513 alkali Substances 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 50
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims description 3
- 238000002242 deionisation method Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 5
- 239000000654 additive Substances 0.000 abstract description 4
- 230000000996 additive effect Effects 0.000 abstract description 4
- 230000003667 anti-reflective effect Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 210000004027 cell Anatomy 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 239000003643 water by type Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000003518 caustics Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
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- Weting (AREA)
Abstract
The present invention relates to a kind of lithographic methods of polysilicon surface pyramid matte, include the following steps：Polysilicon chip surface clean and damaging layer removal, the cleaning of polysilicon chip surface acid etch, polysilicon chip surface alkaline etching and silicon chip.The present invention is etched the preferable pyramid shape suede structure of pattern in polysilicon surface and is achieved good anti-reflective effect using acid+alkali two-step etching method.The average reflectance of polysilicon with pyramid shape matte is 11%.Compared to other lithographic methods, method of the present invention only with acid combined with alkali, without any additive, simple for process, easy to operate, controllability is good and pollution-free, is adapted to commercialization mode of manufacture.
Description
Technical field
The invention belongs to polysilicon solar cell surface texture process fields, and in particular to a kind of polycrystalline of mortar cutting
The lithographic method of the surface pyramid matte of silicon chip.
Background technology
Due to the increasingly depleted of fossil energy, it is badly in need of Looking For Substitutions Of Oil to meet social development demand.With photovoltaic industry
Based on New Energy Industry it is pollution-free, yield is huge with its advantages that be increasingly valued by the people, the especially sun in recent years
Energy battery industry achieves development at full speed.But in the product of commercialized solar cell, crystal silicon is (monocrystalline, polycrystalline, micro-
It is brilliant) market share shared by solar cell is maximum, close to 90% occupation rate of market, due to the material of polysilicon solar cell
Material derives from a wealth of sources, and manufacturing cost is relatively low, and therefore, polysilicon solar cell technology is considerably beyond monocrystalline and the crystallite sun
It can battery.In conclusion improve the efficiency of polysilicon solar cell have for solving energy crisis and environmental pollution and its
Important strategic importance.
There are many ways to improving polysilicon solar cell, and it is then in polysilicon surface etching antireflective suede structure
A method of the most simple and efficient, various antireflective mattes can be effectively reduced the surface reflection of solar cell
Rate increases light absorption, and then improves electricity conversion.
For the suede structure obtained on crystal silicon solar energy battery surface, to reach preferable anti-reflective effect, people
Attempted many methods, form the wet etching based on acid solution or lye and the dry etching based on mechanical processing.
Include commonly mechanical carving groove method, laser ablation method, reactive ion etching method (RIE) etc..Although dry etching can obtain compared with
Low surface reflectivity, but this method causes the mechanical damage of silicon chip surface than more serious, yield rate is relatively low, and
The process of dry etching is complex to cause its less economical.
Due to the difference of polysilicon surface crystal orientation, cause simple alkaline etching that can not form uniform, cause in polysilicon surface
Close suede structure.And the hole shape matte that acid etch is formed can not play the effect for reducing reflectivity very well.Therefore, one is found
The lithographic method that kind is simple and convenient to operate etches fine and close, uniform suede structure with important in polysilicon surface
Meaning.
Invention content
For above problem, the present invention provides a kind of lithographic method of the surface pyramid matte of polysilicon chip, letters
Singly, conveniently, of low cost, acid system and alkaline process combination are carried out, successfully etch pyramid matte in polysilicon surface, hence it is evident that
The light absorpting ability for improving polysilicon surface.
Technical solution：To achieve the goals above, a kind of lithographic method of polysilicon surface pyramid matte of the present invention, packet
Include following steps：
Polysilicon chip surface clean and damaging layer removal：The polysilicon chip is cleaned with deionized water be placed on it is certain dense
Surface mechanical damage layer removal is carried out in the HF of degree；
Polysilicon chip surface acid etch：Acid etch liquid is configured, the acid etch liquid configured is placed on one under ice bath
The section time, the polysilicon chip is then swum in into acid etch liquid surface etch for a period of time, is cleaned after the completion of etching；
Polysilicon chip surface alkaline etching：Alkaline etching liquid is configured, the alkaline etching liquid configured is placed on water-bath one
Then the polysilicon chip after acid etch is immersed and etches a period of time in alkaline etching liquid by the section time；
Wafer Cleaning：It waits for that alkaline etching is completed, is spent again after the polysilicon chip is cleaned with certain density HF
Ionized water is cleaned.
In said program, a concentration of the 5% of HF in damaging layer removal, the polysilicon chip in acid etch liquid
Slight etch period in HF solution is 2~3min.
In said program, the acid etch liquid is HF and HNO3Mixed liquor；HF and HNO3Volume ratio be HF (40%)：
HNO3(65-68%)=1：5.
In said program, the time that the acid etch liquid is placed on ice bath is 15min, and the polysilicon chip is in acid etch liquid
In etch period be 2min.
In said program, the alkaline etching liquid is the NaOH solution of 0.5mol/L.
In said program, the time that the alkaline etching liquid is placed in 50 DEG C of water-bath is 20~30min, the polycrystalline
Etch period of the silicon chip in alkaline etching liquid is 25~40min.
In said program, etch period of the polysilicon chip in alkaline etching liquid is 40min.
In said program, cleaned with a concentration of 5%~8% HF after the completion of the polysilicon chip alkaline etching.
Due to the adoption of the above technical solution, compared with prior art, the invention has the advantages that：
1. polysilicon chip does not select anisotropy to acid etch in the present invention, so after acid etch, silicon chip surface
A large amount of etch pit is covered, and the corner angle between these etch pits etch pyramid matte for lye and provide nucleating condition,
With the extension of polysilicon chip time in alkaline etching liquid, polysilicon surface etches the preferable pyramid matte of pattern, when more
When etch period of the crystal silicon chip in lye is 40min, polysilicon surface is covered by a large amount of pyramid.
2. the present invention combines existing acid etch and alkaline etching technology to obtain polysilicon surface gold by a large amount of experiment
The lithographic method of word tower matte is formed hole shape matte, is further used after cleaning using the first acid etch liquid etching silicon wafer surface
Pyramid structure etching is carried out in alkaline etching liquid, has finally obtained the pyramid matte knot for being more suitable for crystal silicon solar energy battery
Structure.After tested, it is the average anti-of the polysilicon surface that in the sunlight of 300nm~1000nm, the present invention is prepared in wavelength
It is 11% to penetrate rate, and the complete polysilicon solar cell efficiency prepared is also close to 18%.
3. preparation method is simple by the present invention, preferably with existing industrialized producing technology compatibility, and without addition
Any additive effectively reduces the operating cost of experiment.It is suitable for promoting and applying.
Description of the drawings
Fig. 1 is according to the method for implementing to provide obtained pyramid shape matte under conditions of etching 40min of the invention
The low power electron scanning micrograph of structure (scale is 30 μm).
Fig. 2 is according to the method for implementing to provide obtained pyramid shape matte under conditions of etching 40min of the invention
The high power electron scanning micrograph of structure (scale is 3 μm).
Fig. 3 is original silicon chip and uses this method measured under conditions of etching 25min, 35min and 40min
The picture of reflectivity.
Fig. 4 be according to the present invention implement provide method under conditions of etching 25min obtained suede structure it is low
Times electron scanning micrograph (scale is 30 μm).
Fig. 5 be according to the present invention implement provide method under conditions of etching 35min obtained suede structure it is low
Times electron scanning micrograph (scale is 30 μm).
Specific implementation mode
The present invention is further described with reference to embodiment.Polysilicon surface pyramid matte of the present invention
Lithographic method, using the method for acid+caustic corrosion, by adjusting etch period, can polysilicon surface etch pattern compared with
Good pyramid matte.
A kind of lithographic method of polysilicon surface pyramid matte of the present invention, is realized by following steps：Polysilicon
Piece surface clean and damaging layer removal, the cleaning of polysilicon chip surface acid etch, polysilicon chip surface alkaline etching and silicon chip.
Polysilicon chip surface clean and damaging layer removal：First the polysilicon chip is cleaned with deionized water in order to remove silicon
The dust and sundries on piece surface, furthermore washed polysilicon chip is cleaned with ethyl alcohol to remove the greasy dirt of silicon chip surface, later will
Silicon chip immerses 2~3min of cleaning in a certain concentration HF, clear with a large amount of deionizations later to remove the mechanical damage layer of silicon chip surface
Wash the repeatedly remaining HF of removal silicon chip surface.Wherein, the HF of cleaning silicon chip a concentration of 5%, cleaning use a large amount of after completing
Deionized water cleans excessive HF to remove.
Polysilicon chip surface acid etch：Acid etch liquid is configured, according to volume ratio HF：HNO3=1：5 proportional arrangement is appropriate
Acid solution, acid etch liquid is then placed on 15min in ice bath environment, to reduce the temperature of acid solution.The silicon chip cleaned is floated
It floats on acid etch liquid surface and carries out first step etching, etch period 2min.Then by the polysilicon chip after etching with a concentration of
5% NaOH solution is cleaned to remove the remaining acid solution of silicon chip surface, then is cleaned with a large amount of deionized waters, is finally blown with nitrogen stream
It is dry.A concentration of 40%, the HN0 of HF wherein in acid etch liquid3A concentration of 65%~68%, do not add in etching process any
Additive.
Polysilicon chip surface alkaline etching：The NaOH solution of 0.5mol/L is configured as alkaline etching liquid, then by alkaline etching liquid
It is placed on 50 DEG C of 20~30min of water-bath, so that the temperature of alkaline etching liquid is stablized at 50 DEG C, later by the silicon chip after acid etch
It immerses in lye, etch period is 25~40min.
The cleaning of silicon chip：Completion to be etched first removes the remaining alkali of silicon chip surface with the cleaning of the HF of a concentration of 5%-8%
Liquid is cleaned with deionized water again later, is finally dried up with nitrogen stream.
Embodiment one：
A kind of lithographic method of polysilicon surface pyramid matte includes the following steps：
Polysilicon chip surface clean and damaging layer removal：Polysilicon chip is cut into 1cm2Size, the polysilicon of well cutting
A concentration of 5% HF 2~3min of mild corrosion of cleaning, carry out the removal of surface mechanical damage layer.
Polysilicon chip surface acid etch：Configuration volume ratio is HF：HNO3=1:5 acid etch liquid, acid etch liquid is placed
The 15min under ice bath environment reduces the temperature of etching liquid, and the polysilicon chip cleaned, which is then swum in acid solution surface, carves
Then erosion, time 2min clean the polysilicon chip after acid etch to remove silicon chip surface with a concentration of 5% NaOH solution
Remaining acid solution, then cleaned with a large amount of deionized waters, finally dried up with nitrogen stream.
Polysilicon chip surface alkaline etching：The NaOH solution for configuring 5mol/L first, places it in 50 DEG C of water-bath
20~30min makes its temperature reach 50 DEG C of conditions of setting, and the polysilicon chip after acid etch is immersed in alkaline etching liquid and is etched
40min。
The cleaning of silicon chip：With the polysilicon chip after etching in the HF solution of 5% concentration, then with a large amount of deionized water
Cleaning, completely removes the remaining acid solution of silicon chip surface or lye, is finally dried up with nitrogen stream.The SEM of finally formed silicon face
Image is as illustrated in fig. 1 and 2, and polysilicon surface is covered by a large amount of pyramid.
Embodiment two：
A kind of lithographic method of polysilicon surface pyramid matte includes the following steps：
Polysilicon chip surface clean and damaging layer removal：Polysilicon chip is cut into 1cm2Size, the polysilicon of well cutting
Cleaning and with a concentration of 5% HF 2~3min of mild corrosion, progress surface mechanical damage layer removal.
Polysilicon chip surface acid etch：Configure volume ratio HF：HNO3=1:The acid etch liquid of 5 ratios, places it in ice
15min under environment is bathed, the temperature of etching liquid is reduced, the polysilicon chip cleaned, which is then swum in acid solution surface, performs etching,
Time is 2min.It is last then to clean the polysilicon chip after acid etch to remove silicon chip table with a concentration of 5% NaOH solution
The remaining acid solution in face, then cleaned with a large amount of deionized waters, finally dried up with nitrogen stream.
Polysilicon chip surface alkaline etching：The NaOH solution for configuring 5mol/L first, places it in 50 DEG C of water-bath
20~30min makes its temperature reach 50 DEG C of conditions of setting.Polysilicon chip after acid etch is immersed in alkaline etching liquid and is etched
25min。
The cleaning of silicon chip：With the polysilicon chip after etching in the HF solution of 5% concentration, then with a large amount of deionized water
Cleaning, completely removes the remaining acid solution of silicon chip surface or lye, is finally dried up with nitrogen stream.The SEM of finally formed silicon face
Image is as shown in Figure 4.It can be seen from the figure that after polysilicon chip etches 25min in alkaline etching liquid, the hole shape structure on surface
Depth reduces, but small pyramid core occurs in the rib ridge of hole shape structure.This is because lye leads the anisotropy of polysilicon
It causes.
Embodiment three：
A kind of lithographic method of polysilicon surface pyramid matte includes the following steps：
Polysilicon chip surface clean and damaging layer removal：Polysilicon chip is cut into 1cm2Size, the polysilicon of well cutting
Cleaning and with a concentration of 5% HF 2~3min of mild corrosion, progress surface mechanical damage layer removal.
Polysilicon chip surface acid etch：Configure volume ratio HF：HNO3=1:The etching liquid of 5 ratios, places it in ice bath
15min under environment reduces the temperature of etching liquid.Then the polysilicon chip cleaned acid solution surface is swum in perform etching, when
Between be 2min.It is last then to clean the polysilicon chip after acid etch to remove silicon chip surface with a concentration of 5% NaOH solution
Remaining acid solution, then cleaned with a large amount of deionized waters, finally dried up with nitrogen stream.
Polysilicon chip surface alkaline etching：The NaOH solution for configuring 5mol/L first, places it in 50 DEG C of water-bath
20~30min makes its temperature reach 50 DEG C of conditions of setting.Polysilicon chip after acid etch is immersed in alkaline etching liquid and is etched
35min。
The cleaning of silicon chip：With the polysilicon chip after etching in the HF solution of 5% concentration, then with a large amount of deionized water
Cleaning, completely removes the remaining acid solution of silicon chip surface or lye, is finally dried up with nitrogen stream.The SEM of finally formed silicon face
Image is as shown in Figure 5.It can be seen from the figure that with the extension of time, the core of the pyramid shape of polysilicon surface starts to grow up
And it is overlapped.
It can be seen that the method that the present invention implements to provide can be obtained in polysilicon surface from Fig. 1, Fig. 3, Fig. 4 and Fig. 5
Preferable pyramid matte and the apparent effect for playing reduction reflectivity.And with the variation of etch period, polysilicon table
The pattern in face is also changed, and under conditions of etch period is 25min, pyramidal core occurs in polysilicon surface, at that time
Between when extending to 35min, the core of pyramid shape starts to grow up and become intensive, further extends the time to 40min, pyramid into
One step-length is big and is separated from each other.We reflect it can also be seen that when etch period is 40min from the comparison of the reflectivity of Fig. 3
Rate is minimum.Show that pyramidal structure can play the effect for reducing reflectivity well.In addition, the method for the present invention is more existing
The method of other etches polycrystalline silicon wants novel simple and is not necessarily to add any additive during the reaction, effectively reduces reality
Test the cost of operation.Therefore there is good application and development prospect.
It is the detailed description to embodiments of the present invention above, it should be pointed out that：For the ordinary skill of the art
For personnel, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of lithographic method of polysilicon surface pyramid matte, which is characterized in that include the following steps：
Polysilicon chip surface clean and damaging layer removal：The polysilicon chip is cleaned with deionized water be placed on it is certain density
Surface mechanical damage layer removal is carried out in HF；
Polysilicon chip surface acid etch：Acid etch liquid is configured, when the acid etch liquid configured is placed on lower section of ice bath
Between, the polysilicon chip is then swum in into acid etch liquid surface etch for a period of time, is cleaned after the completion of etching；
Polysilicon chip surface alkaline etching：Alkaline etching liquid is configured, when the alkaline etching liquid configured is placed on one section of water-bath
Between, then the polysilicon chip after acid etch is immersed and etches a period of time in alkaline etching liquid；
Wafer Cleaning：It waits for that alkaline etching is completed, deionization is used again after the polysilicon chip is cleaned with certain density HF
Water is cleaned.
2. the preparation method of polysilicon surface pyramid suede structure according to claim 1, which is characterized in that the damage
Hinder a concentration of 5% of HF in layer removal, slight etch period in HF solution of the polysilicon chip in acid etch liquid is 2
~3min.
3. the preparation method of polysilicon surface pyramidal structure according to claim 1, which is characterized in that described harsh
Erosion liquid is HF and HNO3Mixed liquor；HF and HNO3Volume ratio be HF：HNO3=1：5.
4. the preparation method of polysilicon surface pyramidal structure according to claim 1 or 3, which is characterized in that described
The time that acid etch liquid is placed on ice bath is 15min, and etch period of the polysilicon chip in acid etch liquid is 2min.
5. the preparation method of polysilicon surface pyramid suede structure according to claim 1, which is characterized in that the alkali
Etching liquid is the NaOH solution of 0.5mol/L.
6. the preparation method of polysilicon surface pyramid suede structure according to claim 1 or 5, which is characterized in that institute
It is 20~30min, quarter of the polysilicon chip in alkaline etching liquid to state the time that alkaline etching liquid is placed in 50 DEG C of water-bath
The erosion time is 25~40min.
7. the preparation method of polysilicon surface pyramid suede structure according to claim 6, which is characterized in that described more
Etch period of the crystal silicon chip in alkaline etching liquid is 40min.
8. the preparation method of polysilicon surface pyramid suede structure according to claim 1, which is characterized in that described more
It is cleaned with a concentration of 5%~8% HF after the completion of crystal silicon chip alkaline etching.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112893282A (en) * | 2021-01-28 | 2021-06-04 | 西安奕斯伟硅片技术有限公司 | Polysilicon cleaning and recycling pretreatment unit, cleaning machine and cleaning method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794843A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for lowering reflectivity of multi-crystalline texturing |
| CN101805929A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Polycrystalline silicon surface wool manufacturing method |
| CN103413759A (en) * | 2013-08-07 | 2013-11-27 | 上饶光电高科技有限公司 | Texture surface making method of polycrystalline silicon wafers |
| CN103541017A (en) * | 2013-10-28 | 2014-01-29 | 山东力诺太阳能电力股份有限公司 | Polycrystalline silicon solar cell wet-process texturization method |
| CN104752566A (en) * | 2015-04-24 | 2015-07-01 | 中建材浚鑫科技股份有限公司 | Polycrystalline silicon battery texturing process |
| CN105140336A (en) * | 2015-07-21 | 2015-12-09 | 东莞南玻光伏科技有限公司 | Polycrystalline silicon chip texturing and cleaning method |
-
2018
- 2018-03-14 CN CN201810210305.3A patent/CN108400201A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794843A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for lowering reflectivity of multi-crystalline texturing |
| CN101805929A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Polycrystalline silicon surface wool manufacturing method |
| CN103413759A (en) * | 2013-08-07 | 2013-11-27 | 上饶光电高科技有限公司 | Texture surface making method of polycrystalline silicon wafers |
| CN103541017A (en) * | 2013-10-28 | 2014-01-29 | 山东力诺太阳能电力股份有限公司 | Polycrystalline silicon solar cell wet-process texturization method |
| CN104752566A (en) * | 2015-04-24 | 2015-07-01 | 中建材浚鑫科技股份有限公司 | Polycrystalline silicon battery texturing process |
| CN105140336A (en) * | 2015-07-21 | 2015-12-09 | 东莞南玻光伏科技有限公司 | Polycrystalline silicon chip texturing and cleaning method |
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| CN112893282A (en) * | 2021-01-28 | 2021-06-04 | 西安奕斯伟硅片技术有限公司 | Polysilicon cleaning and recycling pretreatment unit, cleaning machine and cleaning method |
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