CN108400113A - processing method - Google Patents
processing method Download PDFInfo
- Publication number
- CN108400113A CN108400113A CN201810113313.6A CN201810113313A CN108400113A CN 108400113 A CN108400113 A CN 108400113A CN 201810113313 A CN201810113313 A CN 201810113313A CN 108400113 A CN108400113 A CN 108400113A
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- China
- Prior art keywords
- machined object
- slot
- film
- ejecta
- back side
- Prior art date
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- 238000003672 processing method Methods 0.000 title claims abstract description 20
- 230000011218 segmentation Effects 0.000 claims abstract description 28
- 239000007921 spray Substances 0.000 claims abstract description 13
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 40
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 17
- 239000001569 carbon dioxide Substances 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 abstract description 38
- 238000002347 injection Methods 0.000 description 36
- 239000007924 injection Substances 0.000 description 36
- 238000001514 detection method Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 9
- 230000004224 protection Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 235000011089 carbon dioxide Nutrition 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 230000006978 adaptation Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
Abstract
Processing method is provided, in the case where the machined object of the plate to being formed with film is split, generates cutting tool and blocks and do not utilize laser processing device and machined object can be split.The processing method is the processing method for the machined object (W) for being set with a plurality of segmentation preset lines (S) and being formed with film (W2) on the back side of plate object (W1) (W1b), wherein, which has following step：Slot forming step forms slot (M1) from the front (W1a) of machined object (W) along segmentation preset lines (S)；Step is kept to be kept to side front (W1a) of machined object (W) after implementing slot forming step and the film (W2) of side the back side (W2b) of machined object (W) is made to expose；And slot penetrates through step, after implementing holding step, sprays ejecta along slot (M1) from the back side side (W2b) of machined object (W) and slot (M1) is made to penetrate through.
Description
Technical field
It is to be set with a plurality of segmentation preset lines and be formed with film on the back side of plate object the present invention relates to processing method
Machined object processing method.
Background technology
When using cutting tool to metal film or resin film etc. be especially malleable film plate object cut
When cutting, cutting tool will produce to be blocked caused by film.Therefore, it is proposed to advance with laser before implementing machining
The method that beam removes above-mentioned film (for example, referring to patent document 1).
Patent document 1：Japanese Unexamined Patent Publication 2016-42526 bulletins
But when removing film using laser beam, there are problems that generating clast, and due to usually utilizing costliness
Laser processing device is processed, the problem of raising there is also manufacturing cost.
As a result, in the case where the machined object of the plate to being formed with film is split, there are following projects：Do not make to cut
Cutting knife tool, which generates, to be blocked and does not utilize laser processing device and can be split to machined object.
Invention content
It is to be set with a plurality of segmentation preset lines and the back side in plate object the purpose of the present invention is to provide processing method
On be formed with film machined object processing method.
The present invention in order to solve the above problems is a kind of processing method, is to be set with a plurality of segmentation preset lines and in plate
The processing method that the machined object of film is formed on the back side of shape object, wherein the processing method has following step：Slot is formed
Step forms slot from the front of machined object along the segmentation preset lines；Keep step, implement the slot forming step it
Afterwards, the face side of machined object is kept and is made the film of the back side of machined object to expose；And slot penetrates through step,
After implementing the holding step, ejecta is sprayed along the slot from the back side of machined object and the slot is made to penetrate through.
It is preferred that the ejecta contains solid carbon dioxide particle.
The processing method of the machined object of the present invention has following step：Slot forming step, from the front of machined object
Slot is formed along segmentation preset lines；Step is kept to be protected to the face side of machined object after implementing slot forming step
It holds and the film of the back side of machined object is made to expose；And slot penetrates through step, after implementing holding step, from machined object
Back side spray ejecta along slot and slot made to penetrate through, to not utilizing laser processing device and also so that cutting tool is produced
Blocking caused by filming makes slot penetrate through, it will be able to machined object by spraying ejecta to the film of machined object
It is split.
In addition, being penetrated through in step in slot, by making ejecta contain solid carbon dioxide particle, can more easily utilize
The injection of ejecta carries out the perforation of slot.
Description of the drawings
Fig. 1 is the side view of an example for showing machined object.
Fig. 2 is the side view for showing to form machined object using cutting apparatus the state of slot.
Fig. 3 is the sectional view shown in an example amplification for the slot that will be formed in machined object.
Fig. 4 is the sectional view of an example for showing the plasma etching apparatus for forming slot to machined object.
Fig. 5 is the sectional view for showing to be pasted with a part for the machined object of the state of protection band in face side.
Fig. 6 is the sectional view of an example for the segmenting device for showing to be split machined object.
Fig. 7 is the sectional view for the state for showing to eject ejecta from injection unit and the slot of machined object being made to penetrate through.
Fig. 8 is the sectional view for showing to be divided into a part for the machined object of the chip with device.
Label declaration
W：Machined object；W1：Plate object；W1a：The front of machined object；S：Divide preset lines；D：Device；W1b：Plate
The back side of object；W2：Film；W2a：The front of film；W2b：The back side of machined object；T1：Dicing tape；F1：Ring-shaped frame；M1：Slot；1：
Cutting apparatus；10：Chuck table；10a：Retaining surface；100：Stationary fixture；11：Cutting unit；110：Cutting tool；111：
Main shaft；9：Plasma etching apparatus；90：Electrostatic chuck；90a：The retaining surface of electrostatic chuck；900：Bearing part；901：Electrode；
91：Gas ejecting head；910：Gas diffusion space；911：Gas introduction port；912：Gas discharge outlet；92：Chamber；920：It moves in
Move out mouth；921：Gate valve；93：Gas offer portion；94、94a：Adaptation；95、95a：High frequency electric source, bias high frequency electric source；96：
Exhaust outlet；97：Exhaust apparatus；R：Etchant resist；T2：Guard block；3：Segmenting device；30：Keep workbench；30a：Retaining surface；
300：Stationary fixture；31：Injection unit；310：Injection nozzle；310a：Jet port；311：Carbon dioxide provides source；312：Air
Offer source；39：Slot detection unit；390：Recess test section；T3：Protection band；P：Ejecta；P1：Dry ice.
Specific implementation mode
Machined object W shown in FIG. 1 is, for example, the semiconductor wafer of the round with plate object W1 made of silicon,
A plurality of segmentation preset lines S is set on the positive W1a of the front of plate object W1, i.e. machined object W in the way of being respectively perpendicular.
Also, it is respectively formed with device D in the region of the clathrate divided by segmentation preset lines S.In Fig. 1, towards -Z direction
The film W2 of uniform thickness (being, for example, 0.5 μm~10 μm) is formed on the back side W1b of the plate object W1 of side, film W2 is by metal structure
At playing a role as electrode.Back side W2b of the exposed surface of film W2 as machined object W.In the outer peripheral edge of machined object W, press
It is formed with the (not shown) recessed of crystal orientation for identification according to the state being recessed towards the center of machined object W and to radially inner side
Mouthful.In addition, the structure of machined object W is not limited to example shown in present embodiment.For example, in addition to silicon, plate object W1
It can be made of sapphire, gallium or silicon carbide etc., in addition, film W2 may not be metal film but such as DAF (Die Attach
Film, chip attachment film) or the thickness of DBF (Die Backside Film, chip back film) etc. be 5 μm~30 μm or so
Resin film.
Hereinafter, machined object W shown in FIG. 1 is divided into the core with device D to implementing the processing method of the present invention
Each step of processing method when piece illustrates.
The embodiment 1 of (1-1) slot forming step
First, implement slot forming step, formed from the positive W1a of machined object W shown in FIG. 1 along segmentation preset lines S
Slot.In the slot forming step of present embodiment 1, formed using cutting apparatus 1 shown in Fig. 2 to carry out slot.
Machined object W shown in Fig. 2 becomes following state：It is pasted with diameter on the back side W2b of machined object W and is more than quilt
The peripheral part of the dicing tape T1 of machining object W, the bonding plane of dicing tape T1 are pasted onto on ring-shaped frame F1.Positive W1a is upward
The machined object W of the state of exposing is supported on by dicing tape T1 on ring-shaped frame F1, can carry out being based on ring to become
The state of the operation of shape frame F1.
Cutting apparatus 1 shown in Fig. 2 for example, at least has：Chuck table 10 carries out attraction guarantor to machined object W
It holds；And cutting unit 11, the machined object W kept to chuck table 10 are implemented using the cutting tool 110 of rotation
Machining.
Such as its shape of chuck table 10 is round, to being added on the retaining surface 10a being made of porous member etc.
Work object W carries out attracting holding.Chuck table 10 can be rotated around the axle center of vertical direction (Z-direction), and can
It is moved back and forth in the X-axis direction by cutting feed unit (not shown).It is for example equal in the peripheral part of chuck table 10
Be arranged evenly there are four (in the example in the figures, illustrating only two) stationary fixture 100, they be used for ring-shaped frame F1 into
Row is fixed.
Cutting unit 11 has main shaft 111, and the axial direction of the main shaft 111 is the movement with machined object W in the horizontal direction
The vertical direction (Y direction) in direction (X-direction) is fixedly arranged at the front end with circular cutting tool 110 in main shaft 111.
First, as shown in Fig. 2, the machined object W that are supported of ring-shaped frame F1 quilts in the state that positive W1a is towards upside
10 attracting holding of chuck table.Also, ring-shaped frame F1 is fixed by each stationary fixture 100.Then, by not scheming
The coordinate position of the Y direction for the segmentation preset lines S that the aligned units shown cut cutting tool 110 to be made is detected.With
The detection to dividing preset lines S, index feed is carried out in the Y-axis direction to cutting unit 11, it is pre- to carry out the segmentation to be cut
Alignment S and the contraposition of cutting tool 110 in the Y-axis direction.
As motor (not shown) drives the rotation of main shaft 111, cutting tool 110 is for example from -Y direction side
For high speed rotation clockwise.In addition, carry out incision feeding towards -Z direction to cutting unit 11, such as by cutting unit
Plate object W1 is completely cut through and is not cut into the height and position of film W2 by 11 bottoms for being positioned at cutting tool 110.In addition,
Cutting unit 11 can also be positioned to height and position, the i.e. cutting tool that cutting tool 110 does not completely cut through plate object W1
The 110 bottom height and position slightly more against the top than the back side W1b of plate object W1.
The chuck table 10 kept to machined object W is with defined cutting feed speed to -X direction side (paper
It is inboard) it is sent, the cutting tool 110 to rotate is along segmentation positive W1a side cutting boards of the preset lines S from machined object W
Shape object W1 forms the slot M1 shown in Fig. 3 for not reaching film W2.In the present embodiment, such as shown in figure 3, as film W2's
The state that positive W2a exposes in the bottom of slot M1.Alternatively, it is also possible to as following state：Cutting as plate object W1 is residual
Remaining part point, slightly remains the bottom of slot M1.
When machined object W is transported to the rule for the X-direction that cutting tool 110 completes a segmentation preset lines S cutting
When fixed position, temporarily cease the cutting feed to machined object W, make cutting tool 110 far from machined object W, then make by
Machining object W is moved and is back to origin position in the+x direction.Then, according to the interval of adjacent segmentation preset lines S to cutting
Cutter 110 carries out index feed in +Y direction and is similarly cut successively, thus along X-axis side on machined object W
To all segmentation preset lines S form depth and do not reach the slot M1 of film W2.In addition, laggard making machined object W be rotated by 90 °
The same machining of row, so as to form the slot M1 that depth does not reach film W2 along all segmentation preset lines S.
The embodiment 2 of (1-2) slot forming step
In the embodiment 1 of above-mentioned slot forming step, formed using cutting apparatus 1 shown in Fig. 2 to carry out slot, but
It can implement slot forming step using plasma etching apparatus 9 shown in Fig. 4.
Plasma etching apparatus 9 shown in Fig. 4 has：Electrostatic chuck 90 keeps machined object W；Gas sprays
Lift one's head 91, sprays gas；And chamber 92, it is accommodated with electrostatic chuck 90 and gas ejecting head 91 in inside.
From below by the ceramics such as such as aluminium oxide or the 90 supported portion part 900 of electrostatic chuck of the dielectric formations such as titanium oxide
Bearing.In the inside of electrostatic chuck 90, parallelly it is equipped with the retaining surface 90a of electrostatic chuck 90 and is generated by applying voltage
The electrode (metallic plate) 901 of charge, the electrode 901 are connect with adaptation 94a and bias high frequency electric source 95a.In addition, such as electrostatic
Chuck 90 is not limited to the electrostatic chuck of monopole type as the present embodiment, can also be so-called ambipolar electrostatic card
Disk.
In the inside for being lifting freely disposed in the gas ejecting head 91 on the top of chamber 92 by bearing 919, setting
There are gas diffusion space 910, gas introduction port 911 to be connected to the top in gas diffusion space 910, multiple gas discharge outlets 912
It is connected to the lower part in gas diffusion space 910.The retaining surface 90a of the lower end of each gas discharge outlet 912 towards electrostatic chuck 90 is opened
Mouthful.
Gas offer portion 93 is provided on gas introduction port 911.Gas offer portion 93 is for example stored with SF6、CF4、
C2F6、C2F4Etc. fluorine-based gas as etching gas.
On gas ejecting head 91 high frequency electric source 95 is connected with via adaptation 94.By high frequency electric source 95 via adaptation 94
RF power is provided to gas ejecting head 91, so as to make the etching gas plasma being discharged from gas discharge outlet 912.Deng
Ion milling apparatus 9 has control unit (not shown), under the control of control unit, the discharge rate and time to gas and high frequency
The conditions such as electric power are controlled.
It is formed with exhaust outlet 96 in the bottom of chamber 92, exhaust apparatus 97 is connected on the exhaust outlet 96.By making this
Exhaust apparatus 97 is acted, can be by the inner pressure relief of chamber 92 to defined vacuum degree.
It is provided in the side of chamber 92：Carrying-in/carrying-out mouth 920 is used to carry out the carrying-in/carrying-out of machined object W；And
The carrying-in/carrying-out mouth 920 is opened and closed in gate valve 921.
When forming slot to machined object W implementation plasma etchings, (not shown in Fig. 4) become of each device D is resisted
Lose the state of film R protections.That is, for example eurymeric anti-corrosion liquid is coated on to the positive W1a of machined object W and on positive W1a shape
After etchant resist at uniform thickness, only to dividing preset lines S irradiating ultraviolet lights, the machined object W after exposure is rushed
It washes, to the state exposed as segmentation preset lines S and device D is protected by etchant resist R.
In addition, be pasted with band or hardboard on the back side W2b of machined object W becomes quilt as guard block T2, back side W2b
The state of guard block T2 protections.
When carrying out slot formation, it is first turned on gate valve 921, machined object W is moved in from carrying-in/carrying-out mouth 920 to chamber 92
It is interior, make the positive sides W1a that machined object W is placed on the retaining surface 90a of electrostatic chuck 90 upward.Closing gate valve 921,
By exhaust apparatus 97 to being exhausted in chamber 92, make the confined space for becoming defined pressure in chamber 92.
So that gas ejecting head 91 is dropped to defined height and position, in this state from gas offer portion 93 will for example with
SF6Etching gas as main body is provided to gas diffusion space 910, and is sprayed downwards from gas discharge outlet 912.In addition,
Apply RF power from high frequency electric source 95 to gas ejecting head 91, high frequency is generated between gas ejecting head 91 and electrostatic chuck 90
Electric field makes etching gas plasma.Concurrently apply voltage from bias high frequency electric source 95a to electrode 901 with this, to quiet
Dielectric polarization phenomenon is generated between the retaining surface 90a and machined object W of electric card disk 90, it is quiet caused by the polarization by charge
Machined object W absorption is maintained on retaining surface 90a by adsorption force.
About the etching gas for producing plasma, each device D coated by etchant resist R is not etched, and
It is to carry out anisotropic etching towards -Z direction on segmentation preset lines S.Therefore, edge shown in Fig. 3 is formed on plate object W1
The slot M1 of the clathrate of segmentation preset lines S.
The etching gas for producing plasma is not etched film W2 made of metal.Therefore, as shown in figure 3,
Plasma etching is being carried out until the bottom of slot M1 does not reach in film W2 and the positive W2a of film W2 exposes it in the bottom of slot M1
Afterwards, plasma etching is terminated.That is, make the importing and RF power into chamber 92 such as etching gas shown in Fig. 4 to
The offer of gas ejecting head 91 stops, and the etching gas in chamber 92 is expelled to exhaust apparatus 97 from exhaust outlet 96, is become
The state of etching gas is not present in the inside of chamber 92.
Alternatively, it is also possible to carry out plasma etching until slightly remaining in figure as etching residue part as plate object W1
The state of the bottom of slot M1 shown in 3.
Then, etchant resist R shown in Fig. 4 is removed from the positive W1a of machined object W.The removal of etchant resist R is for example logical
Cross the ashing (ashing) of the etchant resist R carried out using the wet-treating of defined medicament or plasma etching apparatus 9 come into
Row.
(2) step is kept
It is formed in the slot of the slot forming step or (1-2) embodiment 2 that implement (1-1) embodiment 1 as described above
After arbitrary steps in step, implements to keep step, the positive sides W1a of machined object W are kept and make machined object W
The film W2 of the back side sides W2b expose.
In keeping step, first as shown in figure 5, pasting protection band T3 on the positive W1a of machined object W, and will
Dicing tape T1 or shown in Fig. 4 guard blocks T2 shown in Fig. 2 is removed from the back side W2b of machined object W.As shown in fig. 6, for example
As the state for the protection band T3 for being pasted with outer diameter of the diameter more than machined object W on annular frame F2, back side W2b is upward
The machined object W of the state of exposing becomes the state that can be operated using annular frame F2.
As shown in fig. 6, by being transported to segmentation by the machined object W of the annular frame F2 states supported by protection band T3
Device 3.Segmenting device 3 for example, at least has：Workbench 30 is kept, attracting holding is carried out to machined object W；Injection unit
31, so that film W2 is penetrated through to machined object W injection ejectas, machined object W is divided；And control unit (not shown).
The control unit being made of memory elements such as CPU and memory etc. is electrically connected with workbench 30 and injection unit 31 is kept
It connects, under the control of the control unit, the shift action etc. of the spinning movement and injection unit 31 that keep workbench 30 is controlled.
It is round to keep such as its shape of workbench 30, right on the retaining surface 30a being connected to attraction source (not shown)
Machined object W carries out attracting holding.Keep workbench 30 that can be rotated around the axle center of vertical direction (Z-direction), and can
It is moved back and forth in the X-axis direction by processing feed unit (not shown).Keeping the peripheral part of workbench 30 for example equal
Be arranged evenly there are four (in the example in the figures, illustrating only two) stationary fixture 300, they be used for annular frame F2 into
Row is fixed.
It is placed according to the sides protection band T3 mode directed downwardly by the machined object W that annular frame F2 is supported and keeps workbench 30
Retaining surface 30a on, to the states exposed upward of film W2 of the back side sides W2b as machined object W.Also, by not
The attraction that the attraction source of diagram generates is transferred to retaining surface 30a, to the front using holding workbench 30 to machined object W
The sides W1a carry out attracting holding.In addition, annular frame F2 is fixed by each stationary fixture 300.
(3) step is penetrated through
Then, ejecta is sprayed from injection unit 31 and slot M1 is made to pass through from the back side sides W2b of machined object W along slot M1
It is logical.Injection unit 31 is disposed in the top for keeping workbench 30, such as can eject powdered dry ice using air pressure
(solid carbon dioxide particle), the injection unit 31 can be moved along Y direction and Z-direction.Possessed by injection unit 31
Injection nozzle 310 has the jet port 310a towards the retaining surface 30a for keeping workbench 30.Such as it is arranged on jet port 310a
There is slide unit (not shown), the bore of jet port 310a can be made to become desired size by the slide unit.
Injection nozzle 310 provides source 311 with the carbon dioxide for being stored with liquid carbon dioxide and connect via piping 311a.
In addition, injection nozzle 310 provides source 312 with the air for being stored with compressed air (compressed air) and connects via piping 312a
It connects.
When spraying ejecta along slot M1 from the back side sides W2b of machined object W, detect initially to spray it first
One slot M1 of ejecta.The detection of slot M1 is for example executed by slot detection unit 39 shown in fig. 6.
Such as slot detection unit 39 is stored with the design value of machined object W, which shows machined object W
Diameter, be formed in machined object W outer peripheral edge recess and be formed in plate object W1 positive W1a a plurality of segmentation preset lines
The information such as the interval between interval and a plurality of segmentation preset lines S between S.
Slot detection unit 39 is for example disposed in the top for keeping workbench 30, has to the (not shown) of machined object W
The recess test section 390 that recess is detected.Recess test section 390 is for example made of the optical sensor of light reflection type, with
Rotation to the machined object W holding workbench 30 kept, the detection of the periphery of machined object W in recess test section 390
Pass through in region, the recess so as to the outer peripheral edge to being formed in machined object W is detected.Alternatively, it is also possible to by camera
Deng composition recess test section 390, recess test section 390 carries out image procossing to the shooting figure captured by camera, to being added
The recess of the outer peripheral edge of work object W is detected.
When carrying out the detection of recess of machined object W using recess test section 390, due to along segmentation preset lines S-shaped
At there is slot M1, therefore slot detection unit 39 can be according to the design of the recess and pre-stored machined object W that detect
Value, detects relative positions of the slot M1 that spray it ejecta relative to the notch position as reference position.It connects
It, slot detection unit 39 will be sent out about the detection signal of the position of a slot M1 relative to the notch position as reference position
It send to control unit (not shown).Have received the detection signal control unit make holding workbench 30 rotate as defined in angle and
Recess is positioned at defined coordinate position, a slot M1 to spray it ejecta is adjusted to defined coordinate bit
It sets.Specifically, for example rotating the holding workbench 30 kept to machined object W, to make through machined object W's
Center is parallel relative to X-direction with the imaginary line of recess and recess is made to be located at -X direction side (being in figure 6 paper inboard).
As a result, for example as initially spraying it state that slot M1 of ejecta is extended in parallel along X-direction, and at
For recognize a slot M1 Y axis coordinate position state.
In addition, being not limited by slot detection unit 39 shown in fig. 6 to the detection of slot M1 to carry out.Such as make holding work
Platform 30 is made of transparent components such as glass, and segmenting device 3 is made to have aligned units, which, which has, is disposed in holding work
The camera of the lower section of platform 30.In this case, so that light is penetrated from the lower section irradiation light for keeping workbench 30 and keep workbench 30,
So that the reflected light of the positive W1a of machined object W is imaged on the capturing element of camera, appears before one's eyes out machined object W's to be formed
The shooting image of positive W1a.Also, aligned units carry out the images such as pattern match according to the shooting image obtained using camera
Processing, the slot M1 so as to be formed to the segmentation preset lines S along machined object W are detected.
Such as whens the case where film W2 is along slot M1 undulations etc., phase can be utilized from the back side sides W2b of machined object W
Machine carries out the shooting of machined object W and utilizes the detection of aligned units progress slot M1.
Then, the holding workbench 30 kept to machined object W is sent to as the -X direction toward direction, and
Injection unit 31 moves to make to identify the center line of the slot M1 of coordinate position to be located substantially at injection nozzle in the Y-axis direction
The underface of 310 jet port 310a.Machined object W is further sent with defined processing feed speed to -X direction, and
And provide source 311 from carbon dioxide and provide liquid carbon dioxide to injection nozzle 310, and source 312 is provided to injection from air
Nozzle 310 provides air.
As shown in fig. 7, being carried when the liquid carbon dioxide for providing the offer of source 311 from carbon dioxide and from air offer source 312
The air of confession mixes in injection nozzle 310 and is incorporated as jet port 310a directions of the ejecta P from injection nozzle 310 under high pressure
When lower section is sprayed into air, due to adiabatic expansion, the temperature of liquid carbon dioxide is less than solidification point, generates extremely fine powder
Dry ice (solid carbon dioxide particle) P1 of last shape.
When the film W2 of the powdered dry ice P1 and machined object W is collided, dry ice P1 deformations are crushed, and are distilled as dioxy
Change carbon gas, the energy expanded caused by the distillation due to dry ice P1, film W2 ruptures, and ejecta P penetrates through slot M1.In addition,
The offer amount of liquid carbon dioxide and the spot diameter of the offer amount of air and ejecta P are contemplated that width of slot M1 etc. and adjust
For value appropriate.
Then, ejecta P is sprayed from injection nozzle 310 along slot M1, while machined object W is fed with defined processing
Speed is processed feeding to -X direction, penetrates through film W2 along slot M1 using ejecta P and cuts off.
Such as when machined object W marches to the X-axis side completed along a slot M1 to film W2 injection ejectas P to -X direction
To defined position when, temporarily cease in the -X direction (toward direction) to machined object W processing feeding, make shown in Fig. 7
Injection unit 31 is mobile to +Y direction and is located at the adjacent position for the slot M1 that jetted ejecta P, according to machined object W's
Design value is carried out to the slot M1 that is not yet penetrated through by ejecta P and the contraposition of injection nozzle 310 in the Y-axis direction.
Then, processing feed unit (not shown) is processed feeding to machined object W to +X direction (returning direction), and toward on direction
The injection of ejecta P similarly, along slot M1 sprays ejecta P to film W2.Successively similarly, along extending in the X-axis direction
All slot M1 spray ejecta P from the back side sides W2b of machined object W to film W2, film W2 is penetrated through by ejecta P and along slot M1
It is cut off.In addition, when making holding workbench 30 be rotated by 90 ° and then carry out the injection of same ejecta P, along institute in length and breadth
Film W2 is penetrated through using ejecta P, is cut off by some slot M1, therefore as shown in figure 8, machined object W can be divided into device
Each chip of part D and film W2.
In addition, slot perforation step is not limited to the example in present embodiment.Such as injection unit 31 shown in fig. 6 also may be used
Not spray the ejecta P for including solid carbon dioxide particle P1, but use high pressure water or impart the water edge of ultrasonic wave
Machined object W slot M1 spray to film W2 and can be by the structure of film W2 and slot M1 perforations.In this case, it is stored with water
The water of (such as pure water) provides source and provides source 311 instead of carbon dioxide and connect with injection nozzle 310 via piping 311a.Separately
Outside, it is equipped in the inside of injection nozzle 310 and vibrates the supersonic oscillations portion of ultrasonic wave, be electrically connected in supersonic oscillations portion
It is provided with the high frequency electric source of RF power.
As defined in being provided from water offer source to the offer water of injection nozzle 310 and from high frequency electric source to supersonic oscillations portion
When RF power, RF power is converted into mechanical oscillation by the vibrating elements in supersonic oscillations portion, to vibrate ultrasonic wave.And
And it vibrates the ultrasonic wave and water is propagated in the inside of injection nozzle 310.The water of ultrasonic wave has been transmitted from jet port
310a is sprayed towards machined object W, is contacted with film W2 along slot M1 and is penetrated through film W2 and slot M1.
It, can also be so that plate object W1 be damaged in the case where not assigning ultrasonic wave to the water sprayed from injection nozzle 310
But do not make the pressure (being, for example, 100MPa~300MPa) that chip disperses from jet port 310a towards machined object W injection waters, it is sharp
Film W2 is penetrated through along slot M1 with the high pressure water, cut-out.
In this way, the processing method of the machined object of the present invention has following step：Slot forming step, from machined object W
Positive W1a along segmentation preset lines S-shaped grooving M1；Step is kept, after implementing slot forming step, to machined object W
The positive sides W1a kept and the film W2 of the back side sides W2b that make machined object W exposes；And slot penetrates through step, is implementing
After keeping step, slot M1 is set to penetrate through from the back side sides W2b of machined object W along slot M1 injection ejecta P, to not utilize
Laser processing device and cutting tool 110 is not made to generate the blocking caused by film W2 yet, passes through the film W2 sprays to machined object W
It penetrates ejecta P and slot M1 is made to penetrate through and can be split to machined object W.In addition, due to spraying ejecta P along slot M1,
Therefore compared with the case where spraying ejecta P to the entire surface of the film W2 of machined object W like that in the past, can with the short time and
The emitted dose of ejecta P is inhibited simultaneously to penetrate through film W2 along slot M1 all in length and breadth and accurately cut off.
In addition, penetrated through in step in slot, it, can be more easily by making ejecta P contain solid carbon dioxide particle P1
The perforation of slot M1 is carried out using the injection of ejecta P.
Claims (2)
1. a kind of processing method is to be set with a plurality of segmentation preset lines and be formed with being processed for film on the back side of plate object
The processing method of object, wherein the processing method has following step：
Slot forming step forms slot from the front of machined object along the segmentation preset lines；
Step is kept to be kept to the face side of machined object after implementing the slot forming step and make machined object
Back side the film expose；And
Slot penetrates through step, after implementing the holding step, sprays ejecta along the slot from the back side of machined object
And the slot is made to penetrate through.
2. processing method according to claim 1, wherein
The ejecta includes solid carbon dioxide particle.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-020205 | 2017-02-07 | ||
| JP2017020205A JP2018129355A (en) | 2017-02-07 | 2017-02-07 | Processing method |
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| Publication Number | Publication Date |
|---|---|
| CN108400113A true CN108400113A (en) | 2018-08-14 |
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| CN201810113313.6A Pending CN108400113A (en) | 2017-02-07 | 2018-02-05 | processing method |
Country Status (4)
| Country | Link |
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| JP (1) | JP2018129355A (en) |
| KR (1) | KR20180091723A (en) |
| CN (1) | CN108400113A (en) |
| TW (1) | TW201834042A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109514094A (en) * | 2018-11-06 | 2019-03-26 | 臧晨晨 | A kind of laser cutting machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016032828A (en) * | 2014-07-31 | 2016-03-10 | 浜松ホトニクス株式会社 | Workpiece cutting method |
| JP2016134433A (en) * | 2015-01-16 | 2016-07-25 | 株式会社東芝 | Dicing machine |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014143322A (en) * | 2013-01-24 | 2014-08-07 | Disco Abrasive Syst Ltd | Cleaning device and cleaning method |
| JP2016042526A (en) | 2014-08-18 | 2016-03-31 | 株式会社ディスコ | Wafer processing method |
| JP6438304B2 (en) * | 2015-01-09 | 2018-12-12 | 株式会社ディスコ | Wafer processing method |
| JP6588215B2 (en) * | 2015-03-24 | 2019-10-09 | 株式会社ディスコ | Package substrate cutting method |
-
2017
- 2017-02-07 JP JP2017020205A patent/JP2018129355A/en active Pending
-
2018
- 2018-01-03 TW TW107100193A patent/TW201834042A/en unknown
- 2018-02-01 KR KR1020180012652A patent/KR20180091723A/en not_active Application Discontinuation
- 2018-02-05 CN CN201810113313.6A patent/CN108400113A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016032828A (en) * | 2014-07-31 | 2016-03-10 | 浜松ホトニクス株式会社 | Workpiece cutting method |
| JP2016134433A (en) * | 2015-01-16 | 2016-07-25 | 株式会社東芝 | Dicing machine |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109514094A (en) * | 2018-11-06 | 2019-03-26 | 臧晨晨 | A kind of laser cutting machine |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201834042A (en) | 2018-09-16 |
| KR20180091723A (en) | 2018-08-16 |
| JP2018129355A (en) | 2018-08-16 |
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