CN108398386B - Method and apparatus for in-plane anisotropic crystal axis orientation - Google Patents
Method and apparatus for in-plane anisotropic crystal axis orientation Download PDFInfo
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- CN108398386B CN108398386B CN201810151148.3A CN201810151148A CN108398386B CN 108398386 B CN108398386 B CN 108398386B CN 201810151148 A CN201810151148 A CN 201810151148A CN 108398386 B CN108398386 B CN 108398386B
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Abstract
The present disclosure provides a method and apparatus for in-plane anisotropic crystal material crystal axis orientation, comprising: step A: setting a reference azimuth line on a measured surface of a measured crystal; and B: irradiating the measured surface of the measured crystal by using polarized light and receiving reflected light; and C: changing the polarization angle of the polarized light, and calculating the intensity of the reflected differential signal under different polarization angles by using the intensity of the reflected light under different polarization angles; step D: fitting the reflected differential signal intensity under different polarization angles by using a curve; and step E: and obtaining an included angle between the crystal axis direction and the reference azimuth line according to the fitting curve. According to the in-plane anisotropic crystal axis orientation method and the equipment, the optical reflection difference technology is used for determining the crystal axis direction, and the technical problems that the crystal axis orientation method in the prior art is complex in test flow, low in precision and strict in use condition can be effectively solved.
Description
Technical Field
The disclosure relates to the technical field of surface optical characterization, in particular to a method and equipment for orienting an in-plane anisotropic crystal axis.
Background
Based on the three-dimensional periodicity of the crystal structure in spatial arrangement, each crystal variety can provide a set of natural and reasonable crystal axis system containing three crystal axes for itself. The determination of the crystal axis direction is an important task in crystal processing and semiconductor device fabrication because the anisotropy of the crystal, i.e., the physical properties of the crystal along different crystal directions, varies.
Crystal orientation methods fall into two broad categories, mechanical and optical. Mechanical methods are generally more destructive to the crystal, and thus optical methods are generally used in the prior art to measure the crystal axis direction. The optical method for measuring the crystal axis direction in the prior art mainly comprises the following steps: goniometry, anaglyph methods, photoimaging methods, polarization microscopy, and x-ray methods, among others.
However, in the process of implementing the present disclosure, the inventors of the present application find that the optical measurement method in the prior art generally has the disadvantages of complex test flow, low precision, strict applicable conditions, and the like.
Disclosure of Invention
Technical problem to be solved
Based on the technical problems, the present disclosure provides an in-plane anisotropic crystal axis orientation method and apparatus, so as to alleviate the technical problems of low precision and strict use conditions of the crystal axis orientation method in the prior art.
(II) technical scheme
According to an aspect of the present disclosure, there is provided an in-plane anisotropic crystal axis orientation method, including: step A: setting a reference azimuth line on a measured surface of a measured crystal; and B: irradiating the measured surface of the measured crystal by using polarized light and receiving reflected light; and C: changing the polarization angle of the polarized light, and calculating the intensity of the reflected differential signal under different polarization angles by using the intensity of the reflected light under different polarization angles; step D: fitting the reflected differential signal intensity under different polarization angles by using a curve; and step E: and obtaining an included angle between the crystal axis direction and the reference azimuth line according to the fitting curve.
In some embodiments of the present disclosure, the step C comprises: step C1: deducing a resolving relation between the intensity of the reflected light and the intensity of the reflected differential signal; and step C2: and changing the polarization angle of the polarized light, and calculating the reflected differential signal intensity under different polarization angles according to the calculation relationship between the reflected light intensity and the reflected differential signal intensity.
In some embodiments of the present disclosure, the step C1 includes: by arranging the optical path structure, the reflected light intensity and the phase delay of the polarized light satisfy the following relation:
I＝I0(1+cos2+2Ncos-Csin2)
where I denotes the intensity of the reflected light, I0 denotes the intensity of the background light, denotes the degree to which the phase of the polarized light is modulated,
phi and delta are ellipsometric parameters of the measured crystal; the values of N and C are obtained by changing the degree of phase modulation of the polarized light, and are substituted into the following relation to obtain the intensity of the reflected differential signal:
wherein the content of the first and second substances,
defined as the reflected differential signal strength, Δ r is the difference of the complex reflection coefficients in the two orthogonal axes (x, y) of the crystal surface, r is the average of the two complex reflection coefficients, and i represents the imaginary unit.
In some embodiments of the disclosure, wherein the deriving the values of N and C by varying the degree of phase modulation of the polarized light comprises: step 100: obtaining M phase modulation process degrees1…nM is not less than 3; and
step 200: the following overdetermined equations are solved using the least squares method:
wherein, I1I2…InRespectively, the phase modulation degree is1 2…nThe intensity of the reflected light.
In some embodiments of the disclosure, wherein: the step D comprises the following steps: fitting the reflected differential signal intensities under different polarization angles according to the following curves:
wherein S (theta) is the reflected differential signal strength at the polarization angle theta,
is the amplitude of the fitted curve; the step E comprises the following steps: determining theta in the fitted curve0I.e. the angle between the crystal axis direction and the reference azimuth line.
According to another aspect of the present disclosure, there is also provided a crystal axis orienting apparatus comprising: a light source for emitting collimated monochromatic light; the light beam processing device is connected with the light source and is used for modulating the light beam emitted by the light source into polarized light with different polarization angles, changing the phase delay of the polarized light and receiving the light beam which is irradiated on the measured crystal and reflected; and a light beam receiving device arranged at the downstream of the light beam processing device along the reflection light path, used for receiving the reflection light beam passing through the light beam processing device and executing the following operations: step a: calculating the reflected differential signal intensity under different polarization angles by using the reflected light intensity; step b: fitting the reflected differential signal intensity under different polarization angles by using a curve; and step c: and obtaining the direction of the crystal axis according to the fitting curve.
In some embodiments of the disclosure, wherein: the emergent light path and the reflection light path are partially overlapped, and the light beam receiving device is arranged at the downstream of the light beam processing device along the reflection light path; the crystal axis orientation apparatus further includes: the beam splitter is arranged at a dividing point of an emergent light path and the reflecting light path of the light source and is used for changing the direction of an emergent light beam; wherein: in the outgoing light path: the light beam is emitted from the light source and sequentially passes through the beam splitter and the light beam processing device to reach the surface of the measured crystal; in the reflected light path: and the light beam is emitted from the surface of the measured crystal and reaches the light beam receiving device through the light beam processing device and the beam splitter in sequence.
In some embodiments of the present disclosure, the optical beam processing apparatus includes: the linear polarizer is arranged along an emergent light path of the light source and is used for modulating the light beam emitted by the light source into linearly polarized light; the liquid crystal phase retarder is arranged at the downstream of the linear polarizer along an emergent light path of the light source, forms an included angle of 45 degrees with the projection of the linear polarizer on the surface of the measured crystal and is used for changing the phase delay of the polarized light; and the rotating platform is connected with the linear polarizer and the liquid crystal phase retarder and is used for driving the linear polarizer and the liquid crystal phase retarder to rotate by taking an emergent light path of the light source as an axis.
In some embodiments of the present disclosure, further comprising: the objective lens is arranged between the light beam processing device and the measured crystal along an emergent light path of the light source and is used for searching the measured crystal and assisting in receiving a reflected light beam; wherein, the magnification of the objective lens is not more than five times, and the numerical aperture of the objective lens is not more than 0.15.
In some embodiments of the present disclosure, the light beam receiving device includes: a CCD camera or a CMOS light sensing element.
(III) advantageous effects
From the technical scheme, the in-plane anisotropic crystal axis orientation method and the in-plane anisotropic crystal axis orientation equipment provided by the disclosure have one or part of the following beneficial effects:
(1) the reflection difference technology is used for determining the crystal axis direction, so that the effect is obvious in the determination of the crystal axis direction of the traditional state anisotropic crystal, and the method is also applicable to the determination of the crystal axis direction of a newly-developed two-dimensional anisotropic material;
(2) the crystal axis direction is determined by using a curve fitting method, instead of determining the positions of wave crests and wave troughs by searching for an extreme value, so that sufficient accuracy is ensured under the condition of less test points;
(3) the crystal axis direction is detected by using an optical method, and the equipment is not in mechanical contact with the measured crystal and does not damage the surface of the crystal in the measurement process;
(4) the value of the unknown N, C is obtained by solving the over-determined equation set through a least square method, so that errors can be effectively reduced, and the optimization of a measurement result is realized;
(5) the emergent light path and the incident light path are partially overlapped, so that the optimal design of the light path is realized, and the whole volume of the equipment can be effectively reduced;
(6) in the measurement process, the reflection differential signals at various polarization angles of 0-360 degrees on the surface of the measured crystal can be obtained through the rotating table, and the selection and the balance can be carried out from the two aspects of the measurement speed and the measurement precision by selecting the size of the stepping angle.
Drawings
Fig. 1 is a schematic step diagram of an in-plane anisotropic crystal axis orientation method according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of a fitted curve in the in-plane anisotropic crystal axis orientation method provided by the embodiment of the present disclosure.
Fig. 3 is a schematic structural diagram of a crystal axis orientation apparatus provided in an embodiment of the present disclosure.
Fig. 4 is a schematic projection diagram of a linear polarizer and a liquid crystal phase retarder on a surface of a measured crystal in a crystal axis orientation apparatus provided by an embodiment of the disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
10-a crystal to be tested; 20-a light source; 30-a light beam processing device;
40-a light beam receiving device; 50-a beam splitter; 60-an objective lens;
11-reference azimuth line; 31-a linear polarizer; 32-liquid crystal phase retarder.
Detailed Description
In the method and the device for orienting the crystal axis of the in-plane anisotropic crystal provided by the embodiment of the disclosure, the reflection difference technology is used for determining the crystal axis direction, so that the measurement accuracy is improved, and the application range of the method is also widened.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Fig. 1 is a schematic step diagram of an in-plane anisotropic crystal axis orientation method according to an embodiment of the present disclosure. Fig. 2 is a schematic diagram of a fitted curve in the in-plane anisotropic crystal axis orientation method provided by the embodiment of the present disclosure.
According to an aspect of the present disclosure, there is provided a method of crystal axis orientation, as shown in fig. 1-2, comprising: step A: setting a reference orientation line 11 on a measured surface of a measured crystal 10; and B: irradiating the measured surface of the measured crystal by using polarized light and receiving reflected light; and C: changing the polarization angle of the polarized light, and calculating the intensity of the reflected differential signal under different polarization angles by using the intensity of the reflected light under different polarization angles; step D: fitting the reflected differential signal intensity under different polarization angles by using a curve; and step E: and obtaining an included angle between the crystal axis direction and the reference azimuth line according to the fitting curve.
The crystal axis orientation method provided by the disclosure uses the reflection difference technology for determining the crystal axis direction, has a remarkable effect on the determination of the crystal axis direction of the traditional bulk state anisotropic crystal, and is also suitable for determining the crystal axis direction of a newly-developed two-dimensional anisotropic material; the crystal axis direction is determined by using a curve fitting method, instead of determining the positions of wave crests and wave troughs by searching for an extreme value, so that sufficient accuracy is ensured under the condition of less test points; the crystal axis direction is detected by an optical method, and the equipment is not in mechanical contact with the measured crystal in the measurement process, so that the surface of the crystal is not damaged.
In some embodiments of the disclosure, step C comprises: step C1: deducing a resolving relation between the intensity of the reflected light and the intensity of the reflected differential signal; and step C2: and changing the polarization angle of the polarized light, and calculating the reflected differential signal intensity under different polarization angles according to the calculation relationship between the reflected light intensity and the reflected differential signal intensity.
In some embodiments of the present disclosure, step C1 includes: by arranging the optical path structure, after being emitted from the light source, the light beam sequentially passes through the linear polarizer 31 and the liquid crystal phase retarder 32 to irradiate the measured surface of the measured crystal 10, then the reflected light rays sequentially pass through the liquid crystal phase retarder 32 and the linear polarizer 31 to be received by the light beam receiving device 40, and the included angle of the projection of the linear polarizer 31 and the liquid crystal phase retarder 32 on the measured surface of the measured crystal 10 is ensured to be 45 degrees, so that the reflected light intensity and the phase delay of the polarized light satisfy the following relation:
I＝I0(1+cos2+2Ncos-Csin2)
wherein I represents the intensity of the reflected light, I0Indicating the background light intensity, indicating the degree to which the phase of the polarized light is modulated,
phi and delta are ellipsometric parameters of the measured crystal; the values of N and C are obtained by changing the degree of phase modulation of the polarized light, and are substituted into the following relation to obtain the intensity of the reflected differential signal:
wherein the content of the first and second substances,
defined as the reflected differential signal strength, Δ r is the difference of the complex reflection coefficients in the two orthogonal axes (x, y) of the crystal surface, r is the average of the two complex reflection coefficients, and i represents the imaginary unit.
In some embodiments of the present disclosure, wherein the deriving the values of N and C by varying the degree of phase modulation of the polarized light comprises: step 100: obtaining M phase modulation process degrees by varying the voltage applied to the liquid crystal phase retarder1…nM is not less than 3; and step 200: the following overdetermined equations are solved using the least squares method:
wherein, I1I2…InThe degree of phase modulation of the liquid crystal phase retarders is respectively1 2…nThe corresponding reflected light intensity obtains the value of the unknown N, C by solving an over-determined equation set through a least square method, so that errors can be effectively reduced, and the optimization of a measurement result is realized.
In some embodiments of the present disclosure, as shown in fig. 2, wherein: the step D comprises the following steps: fitting the reflected differential signal intensities under different polarization angles according to the following curves:
wherein S (theta) is the intensity of the reflected differential signal under the polarization angle theta (S (theta) only selects the real part of the reflected differential signal here), and Delta R/R is the amplitude of a fitting curve; the step E comprises the following steps: determining theta in the fitted curve0I.e. the angle between the crystal axis direction and the reference azimuth line 11.
Fig. 3 is a schematic structural diagram of a crystal axis orientation apparatus provided in an embodiment of the present disclosure.
According to another aspect of the present disclosure, as shown in fig. 3, there is also provided a crystal axis orienting apparatus comprising: a light source 20 for emitting collimated monochromatic light; the light beam processing device 30 is connected with the light source 20 and is used for modulating the light beam emitted by the light source into polarized light with different polarization angles, changing the phase delay of the polarized light and receiving the light beam which is irradiated on the measured crystal and reflected; and a light beam receiving device 40, disposed downstream of the light beam processing device along the reflected light path, for receiving the reflected light beam passing through the light beam processing device 30, and performing the following operations: step a: calculating the reflected differential signal intensity under different polarization angles by using the reflected light intensity; step b: fitting the reflected differential signal intensity under different polarization angles by using a curve; and step c: and obtaining the direction of the crystal axis according to the fitting curve.
In some embodiments of the present disclosure, as shown in fig. 3, wherein: the outgoing optical path and the reflected optical path partially coincide and a beam receiving means 40 is arranged downstream of the beam processing means 30 along the reflected optical path.
The crystal axis orientation apparatus further includes: a beam splitter 50 provided at a boundary point of an outgoing light path and a reflected light path of the light source 20, for changing a direction of the outgoing light beam;
wherein, as shown in fig. 3:
in the emergent light path: the light beam is emitted from the light source 20 and sequentially passes through the beam splitter 50 and the light beam processing device 30 to reach the surface of the measured crystal 10;
in the reflected light path: the light beam is emitted from the surface of the measured crystal 10, and then sequentially passes through the light beam processing device 30 and the beam splitter 50 to reach the light beam receiving device 40, and the emergent light path and the incident light path are partially overlapped, so that the optimal design of the light path is realized, and the whole volume of the equipment can be effectively reduced.
In some embodiments of the present disclosure, as shown in fig. 3-4, the beam processing device 30 includes: a linear polarizer 31, a liquid crystal phase retarder 32 and a rotating table.
And a linear polarizer 31 disposed along an exit optical path of the light source 20 for modulating the light beam emitted from the light source into linearly polarized light.
And the liquid crystal phase retarder 32 is arranged at the downstream of the linear polarizer along the emergent light path of the light source 20, forms an included angle of 45 degrees with the projection of the linear polarizer 31 on the surface of the measured crystal 10, and can change the phase delay of the liquid crystal phase retarder 32 by changing the voltage loaded on the liquid crystal phase retarder 32, thereby changing the phase delay of the polarized light passing through the liquid crystal phase retarder 32.
And the rotating platform is connected with the linear polarizer 31 and the liquid crystal phase retarder 32 and is used for driving the linear polarizer 31 and the liquid crystal phase retarder 32 to rotate by taking the emergent light path of the light source 20 as an axis.
In some embodiments of the present disclosure, as shown in fig. 3, further comprising: an objective lens 60, disposed between the light beam processing device 30 and the measured crystal 10 along the emergent light path of the light source 20, for searching the measured crystal 10 and assisting in receiving the reflected light beam; wherein, the magnification of the objective lens 60 is not more than five times, and the numerical aperture of the objective lens 60 is not more than 0.15.
In some embodiments of the present disclosure, the light beam receiving device 40 includes: a CCD camera or a CMOS light sensing element.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should have a clear understanding of the in-plane anisotropic crystal axis orientation method and apparatus provided by the present disclosure.
In summary, the in-plane anisotropic crystal axis orientation method and apparatus provided by the present disclosure use the reflection difference technique for determining the crystal axis direction, which not only improves the accuracy of measurement, but also improves the application range of the method.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (9)
1. An in-plane anisotropic crystal axis orientation method, comprising:
step A: setting a reference azimuth line on a measured surface of a measured crystal;
and B: irradiating the measured surface of the measured crystal by using polarized light and receiving reflected light;
and C: changing the polarization angle of the polarized light, and calculating the intensity of the reflected differential signal under different polarization angles by using the intensity of the reflected light under different polarization angles;
step D: fitting the curves according to the following formula for the reflected differential signal intensities under different polarization angles:
wherein S (theta) is the reflected differential signal strength at the polarization angle theta,
is the amplitude of the fitted curve;
step E: obtaining an included angle theta between the crystal axis direction and the reference azimuth line according to the fitting curve0。
2. The in-plane anisotropic crystal axis orientation method of claim 1, the step C comprising:
step C1: deducing a resolving relation between the intensity of the reflected light and the intensity of the reflected differential signal; and
step C2: and changing the polarization angle of the polarized light, and calculating the reflected differential signal intensity under different polarization angles according to the calculation relationship between the reflected light intensity and the reflected differential signal intensity.
3. The in-plane anisotropic crystal axis orientation method of claim 2, the step C1 comprising:
by arranging the optical path structure, the reflected light intensity and the phase delay of the polarized light satisfy the following relation:
I＝I0(1+cos2+2N cos-Csin2)；
wherein I represents the intensity of the reflected light, I0Indicating the background light intensity, indicating the degree to which the phase of the polarized light is modulated,
phi and delta are ellipsometric parameters of the measured crystal;
the values of N and C are obtained by changing the degree of phase modulation of the polarized light, and are substituted into the following relation to obtain the intensity of the reflected differential signal:
wherein the content of the first and second substances,
defined as the reflected differential signal strength, Δ r is the difference of the complex reflection coefficients in the two orthogonal axes (x, y) of the crystal surface, r is the average of the two complex reflection coefficients, and i represents the imaginary unit.
4. The in-plane anisotropic crystal axis orientation method according to claim 3, wherein finding the values of N and C by changing the degree of phase modulation of polarized light comprises:
step 100: obtaining M phase modulation process degrees1…nM is not less than 3; and
step 200: the following overdetermined equations are solved using the least squares method:
wherein, I1I2…InRespectively, the phase modulation degree is1 2…nThe intensity of the reflected light.
5. A crystal axis orientation apparatus, comprising:
a light source for emitting collimated monochromatic light;
the light beam processing device is connected with the light source and is used for modulating the light beam emitted by the light source into polarized light with different polarization angles, changing the phase delay of the polarized light and receiving the light beam which is irradiated on the measured crystal and reflected; and
the light beam receiving device is arranged at the downstream of the light beam processing device along the reflection light path, is used for receiving the reflected light beam passing through the light beam processing device and executes the following operations:
step a: calculating the reflected differential signal intensity under different polarization angles by using the reflected light intensity;
step b: fitting the curves according to the following formula for the reflected differential signal intensities under different polarization angles:
wherein S (theta) is the reflected differential signal strength at the polarization angle theta,
is the amplitude of the fitted curve;
step c: obtaining an included angle theta between the crystal axis direction and the reference azimuth line according to the fitting curve0。
6. The crystal axis orientation apparatus of claim 5, wherein: the emergent light path and the reflection light path are partially overlapped, and the light beam receiving device is arranged at the downstream of the light beam processing device along the reflection light path;
the crystal axis orientation apparatus further includes: the beam splitter is arranged at a dividing point of an emergent light path and the reflecting light path of the light source and is used for changing the direction of an emergent light beam;
wherein:
in the outgoing light path: the light beam is emitted from the light source and sequentially passes through the beam splitter and the light beam processing device to reach the surface of the measured crystal;
in the reflected light path: and the light beam is emitted from the surface of the measured crystal and reaches the light beam receiving device through the light beam processing device and the beam splitter in sequence.
7. The crystal axis orientation apparatus of claim 5, the beam processing device comprising:
the linear polarizer is arranged along an emergent light path of the light source and is used for modulating the light beam emitted by the light source into linearly polarized light;
the liquid crystal phase retarder is arranged at the downstream of the linear polarizer along an emergent light path of the light source, forms an included angle of 45 degrees with the projection of the linear polarizer on the surface of the measured crystal and is used for changing the phase delay of the polarized light; and
and the rotating platform is connected with the linear polarizer and the liquid crystal phase retarder and is used for driving the linear polarizer and the liquid crystal phase retarder to rotate by taking the emergent light path of the light source as an axis.
8. The crystal axis orientation apparatus of claim 5, further comprising: the objective lens is arranged between the light beam processing device and the measured crystal along an emergent light path of the light source and is used for searching the measured crystal and assisting in receiving a reflected light beam;
wherein, the magnification of the objective lens is not more than five times, and the numerical aperture of the objective lens is not more than 0.15.
9. The crystal axis orientation apparatus of claim 5, the light beam receiving device comprising: a CCD camera or a CMOS light sensing element.
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