CN108394859A - A kind of silicon substrate wide spectrum absorbs optical-thermal conversion material and preparation method thereof - Google Patents
A kind of silicon substrate wide spectrum absorbs optical-thermal conversion material and preparation method thereof Download PDFInfo
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- CN108394859A CN108394859A CN201810103181.9A CN201810103181A CN108394859A CN 108394859 A CN108394859 A CN 108394859A CN 201810103181 A CN201810103181 A CN 201810103181A CN 108394859 A CN108394859 A CN 108394859A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 25
- 239000010703 silicon Substances 0.000 title claims abstract description 25
- 238000001228 spectrum Methods 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims description 20
- 239000002070 nanowire Substances 0.000 claims abstract description 62
- 239000002096 quantum dot Substances 0.000 claims abstract description 20
- 239000011258 core-shell material Substances 0.000 claims abstract description 17
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 15
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 5
- 239000006260 foam Substances 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 239000003638 chemical reducing agent Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000011889 copper foil Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000002041 carbon nanotube Substances 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- 239000006262 metallic foam Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims 1
- 239000013049 sediment Substances 0.000 claims 1
- 239000011257 shell material Substances 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 238000012512 characterization method Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 239000002082 metal nanoparticle Substances 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010612 desalination reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000013535 sea water Substances 0.000 description 2
- 229910000714 At alloy Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002078 nanoshell Substances 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B1/001—Devices without movable or flexible elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
- B82B3/0019—Forming specific nanostructures without movable or flexible elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of silicon substrate wide spectrums to absorb optical-thermal conversion material, includes the nucleocapsid ontology equipped with interconnection nano wire, the nucleocapsid ontology includes superstructure and substructure；Alloy quantum dot is inlaid on the nano wire of the superstructure, being grafted on the nano wire of the substructure has nano wire；The nano wire composition three-dimensional manometer hierarchical structure of the interconnection nano wire, the alloy quantum dot and grafting inlayed.The nanometer hierarchical structure that the present invention designs can not only efficiently use the sunken light characteristic of one-dimensional nano line array, improve the capture ability of light.It is embedded on the core-shell nano line of interconnection moreover, this core-shell nano cable architecture can generate alloy quantum dot during high temperature reduction, absorbability of the Shell Materials such as Si or Ge to sunlight is enhanced by the local surface phasmon effect of metal.Furthermore it is possible to which the light of absorption is converted into heat local in device surface by the Photothermal characterisation for efficiently using metal nanoparticle.
Description
Technical field
The present invention relates to a kind of optical-thermal conversion materials and preparation method thereof, are more specifically to be related to one kind having alloy amount
The three-dimensional silicon-based nano hierarchical structure optical-thermal conversion material of interconnection and preparation method thereof that son point is inlayed；Belong to photothermal conversion neck
Domain.
Background technology
Solar energy is the most abundant energy that the mankind can develop and use.As a kind of clean energy resource, solar energy development utilizes
During will not cause environmental pollution.Mainly there are photothermal conversion, opto-electronic conversion and photochemical to the utilization of solar energy at present
Learn the modes such as conversion.Solar energy optical-thermal application is, most direct, one of the most effective ways most simple using solar energy.Photo-thermal turns
It changes in sea water desalination, water process, chemical industry, sterilizing, the fields such as biomedicine show good application prospect.Earth surface is daily
The solar energy received is considerably beyond whole world energy demand in 1 year.The statistical data of International Energy Agency is shown, in the whole world 4%
Desert on solar energy photovoltaic system is installed, be just sufficient for global energy requirements.However, energy is close after sunlight reaches the earth
Degree is smaller and discontinuous, it is difficult to be developed and used on a large scale, adds the optics in transfer process and calorifics loss, limitation
Transfer efficiency.
Based on this, design is a kind of being capable of wide spectrum, high efficiency absorption sunlight and the material change for realizing efficient light- heat transfer
It obtains particularly important.
Invention content
The technical problem to be solved by the present invention is to, the shortcomings that overcoming the prior art, provides and a kind of received with the nucleocapsid of interconnection
The three-dimensional manometer hierarchical structure of nano wire is grafted by upper layer embedded alloy quantum dot based on rice noodles, lower layer；Reduce reflectivity
And transmissivity, wide spectrum absorption efficiency is improved, photothermal conversion efficiency is greatly improved.
In order to solve the above technical problems, the present invention provides a kind of silicon substrate wide spectrum absorption optical-thermal conversion material, feature
It is：Include the nucleocapsid ontology equipped with interconnection nano wire, the nucleocapsid ontology includes superstructure and substructure；
Alloy quantum dot is inlaid on the nano wire of the superstructure, being grafted on the nano wire of the substructure has nano wire；Institute
State interconnection nano wire, the nano wire of the alloy quantum dot and grafting inlayed constitutes three-dimensional manometer hierarchical structure.
The technical characteristic that the present invention further limits is：The nuclear shell structure nano line is the Si or Ge or both of interconnection
The nuclear shell structure nano line of composite material coated metal oxide nano wire.
Further, the metal oxide nano-wire is CuO nano wires or Fe2O3Nano wire or NiO nanowire or ZnO
Several composite construction of nano wire or more.
Further, the nanoshells of the nuclear shell structure nano line are the composite material of Si or Ge or both.
Further, the composite material that the alloy quantum dot inlayed is Si or Ge or both coat Cu or Fe or Ni or
The Core-shell Structure Nanoparticles that the metals such as Zn are formed.
Further, the nano wire of the grafting is silicon nanowires or Ge nanoline.
The invention further relates to a kind of silicon substrate wide spectrum absorb optical-thermal conversion material preparation method, it is characterised in that including with
Under several steps：
1）It is prepared by growth substrate
It is 0.3-0.5mm by thickness, metal foam of the porosity more than 95% is used as growth substrate after being cleaned in ethanol solution；
2）The preparation of core-shell nano line core core：
By growth substrate in air atmosphere 400-600 DEG C annealing 3-5h, grow the metal oxide nano-wire of intersection；
3）The preparation of core-shell nano line shell and the formation of interconnection architecture:
Si or Ge materials are deposited, the interconnection nuclear shell structure nano line of Si or Ge coated metal oxides is obtained；Si materials can be
Non-crystalline silicon（a-Si）Can also be crystalline silicon (c-Si)；Ge materials can be amorphous germanium（a-Ge）Can also be crystal germanium (c-
), Ge including but not limited to this.The nucleocapsid of the CuO Si or Ge of formation can be nano wire systems, can also be nanometer
The mixed system or powder systems of particle, including but not limited to this.
4）The addition of catalyst：
In thermal evaporation system, the Sn of thermal evaporation 3-20nm is as catalyst on the core-shell nano line of nucleocapsid body lower part；
5）Graft nano wire in lower part：
It in PECVD system, is catalyzed by Sn, nano wire is grafted on the lower core shell nano wire for evaporated Sn and forms Si/Ge packets
The classification understructure for connecing Si/Ge nano wires is remarried after covering metal oxide；
6）Top embedded alloy quantum dot：
In annealing furnace, 400-600 DEG C is added reducing agent annealing 3-5 h, is formed and is closed on the top nucleocapsid nano wire for do not evaporate Sn
The classification superstructure that golden quantum dot is inlayed；
7）It is prepared by passivation layer：
In ALD system, Al is coated2O3As surface passivation layer the nanometer hierarchical structure surface of preparation formed one layer it is stable
SEI films.
The technical solution that the present invention further limits is：3）In step, deposition Si/Ge materials use chemical vapor deposition
CVD, plasma activated chemical vapour deposition PECVD or physical vapour deposition (PVD) PVD.
Further, 5）In step, the nano wire grafted after silicon/germanium coated metal oxide is silicon nanowires or germanium nanometer
Line.
Further, 6）In step, the reducing agent is reducibility gas H2Or CO or reproducibility solid carbon dust/graphite
Alkene/carbon nanotube.
Further, 1）In step, the growth substrate is stainless steel lining bottom/copper foil/foam copper/foam zinc/foamed iron.
The beneficial effects of the invention are as follows：The nanometer hierarchical structure that the present invention designs can not only efficiently use one-dimensional nano line
The sunken light characteristic of array improves the capture ability of light, and this core-shell nano cable architecture can give birth to during high temperature reduction
It is embedded on the core-shell nano line trunk of interconnection at alloy quantum dot, is enhanced by the local surface phasmon effect of metal
Absorbability of the Shell Materials such as Si/Ge to sunlight.Furthermore it is possible to which efficiently using the Photothermal characterisation of metal nanoparticle will inhale
The light of receipts is converted into heat local in device surface.It is repeatedly anti-that the nanometer hierarchical structure of interconnection can be such that light occurs in inside configuration
It penetrates, the light of capture is all fully absorbed in any angle of material surface, is effectively reduced the reflectivity and transmissivity of incident light, is carried
High efficiency of light absorption.Efficient light- heat transfer may be implemented in the interconnection nanometer hierarchical structure of preparation.The material is excellent steady with its
Qualitative and corrosion resistance not only can be applied to solar seawater desalination, but also sun light absorber and heat trap can be used as to answer
For solar thermal photovoltaic system.
Description of the drawings
Fig. 1 is the preparation process schematic diagram of nanometer hierarchical structure of the embodiment of the present invention.
Fig. 2 is that the embodiment of the present invention inlays Cu3The interconnection nanometer hierarchical structure upper layer SEM phenograms of Si quantum dots.
Fig. 3 is the interconnection nanometer hierarchical structure lower layer SEM phenograms that the embodiment of the present invention grafts c-Si nano wires.
Fig. 4 is a kind of spectral absorption figure of optical-thermal conversion material prepared by the method for the invention.
Fig. 5 is three-dimensional manometer hierarchical structure schematic diagram of the embodiment of the present invention.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific implementation example, and join
According to attached drawing 1 to 3, the present invention is described in more detail.
A kind of silicon substrate wide spectrum that the present embodiment provides absorbs optical-thermal conversion material, includes the nucleocapsid equipped with interconnection nano wire
Structural body, the nucleocapsid ontology includes superstructure and substructure；It is inlaid on the nano wire of the superstructure
Alloy quantum dot, on the nano wire of the substructure grafting have nano wire；The alloy quantum dot for interconnecting nano wire, inlaying
And the nano wire of grafting constitutes three-dimensional manometer hierarchical structure.As shown in Figure 5.
The preparation method that the silicon substrate wide spectrum absorbs optical-thermal conversion material includes following steps：
1）It is 0.3-0.5mm by thickness, foam copper foil of the porosity more than 95% cleans conduct after 20min in ethanol solution
Substrate；
2）450 DEG C of annealing 5h in air atmosphere, grow the CuO nano wires of intersection；
3）In PECVD system, under the conditions of power 20W, 250 DEG C of temperature, deposited amorphous Si30min, it is about 100nm to obtain diameter
Interconnection CuO@a-Si core-shell nano cable architectures；
4）3 nm Sn are evaporated as catalyst on the CuO@a-Si core-shell nano lines of interconnection using thermal evaporation techniques；
5）In PECVD system, 450 DEG C are catalyzed the c-Si/CuO@a-Si NWs structures that grafting c-SiNWs forms classification by Sn；
6）In annealing furnace, H at 500 DEG C2CuO@a-Si NWs structures are restored, Cu is obtained3The CuO@a-Si that Si quantum dots are inlayed
NWs structures；
7）In ALD atomic layer deposition systems, 5nm Al are coated by ALD2O3Nanometer as surface passivation layer in preparation is classified
Body structure surface forms one layer of stable SEI film.
From SEM it is apparent that the present embodiment inlays Cu based on the core-shell nano line interconnected3Si quantum dots
Upper layer and graft silicon nanowires lower layer constitute three-dimensional manometer hierarchical structure.The absorption spectrum of material prepared is tested：Such as
Shown in Fig. 4：The present embodiment material prepared absorptivity of incident light in the wave-length coverage of 200nm to 2500nm is above 90%,
Sunshine absorptivity reaches 93.5% in 200nm to 2500nm wave-length coverages.And it yet there are no in 200nm to 2500nm's
The technological document of all-wave length sunshine absorptivity big 90% discloses, and yet there are no in 200nm to 2500nm wave-length coverages
Sunshine absorptivity is more than that 93% technological document discloses.
In addition to the implementation, the present invention can also have other embodiment.It is all to use equivalent substitution or equivalent transformation shape
At technical solution, fall within the scope of protection required by the present invention.
Claims (10)
1. a kind of silicon substrate wide spectrum absorbs optical-thermal conversion material, it is characterised in that：It include the nucleocapsid equipped with interconnection nano wire
Ontology, the nucleocapsid ontology includes superstructure and substructure；It is inlaid with alloy on the nano wire of the superstructure
Quantum dot, on the nano wire of the substructure grafting have nano wire；The interconnection nano wire, the alloy quantum dot inlayed and
The nano wire of grafting constitutes three-dimensional manometer hierarchical structure.
2. silicon substrate wide spectrum according to claim 1 absorbs optical-thermal conversion material, it is characterised in that：The nucleocapsid sheet
The nano wire of body is the interconnection nuclear shell structure nano line of the composite material coated metal oxide nano wire of Si or Ge or both.
3. silicon substrate wide spectrum according to claim 2 absorbs optical-thermal conversion material, it is characterised in that：The metal oxide
Nano wire is CuO nano wires or Fe2O3Nano wire or several composite construction of NiO nanowire or ZnO nano-wire or more.
4. silicon substrate wide spectrum according to claim 3 absorbs optical-thermal conversion material, it is characterised in that：The alloy inlayed
The composite material that quantum dot is Si or Ge or both coats the Core-shell Structure Nanoparticles that the metals such as Cu or Fe or Ni or Zn are formed.
5. silicon substrate wide spectrum according to claim 1 absorbs optical-thermal conversion material, it is characterised in that：The nanometer of the grafting
Line is silicon nanowires or Ge nanoline.
6. a kind of silicon substrate wide spectrum absorbs the preparation method of optical-thermal conversion material, it is characterised in that including following steps：
1）It is prepared by growth substrate
It is 0.3-0.5mm by thickness, metal foam of the porosity more than 95% is used as growth substrate after being cleaned in ethanol solution；
2）The preparation of core-shell nano line core core：
By growth substrate in air atmosphere 400-600 DEG C annealing 3-5h, grow the metal oxide nano-wire of intersection；
3）The preparation of core-shell nano line shell and the formation of interconnection architecture：
In PECVD system, the Si or Ge that are interconnected in metal oxide nano-wire external sediment Si or the Ge material of intersection are coated
The nuclear shell structure nano line of metal oxide；
4）The addition of catalyst：
In thermal evaporation system, the Sn of thermal evaporation 3-20nm is as catalyst on the core-shell nano line of nucleocapsid body lower part；
5）Graft nano wire in lower part：
It in PECVD system, is catalyzed by Sn, nano wire is grafted on the lower core shell nano wire for evaporated Sn and forms Si/Ge packets
The classification understructure for connecing Si/Ge nano wires is remarried after covering metal oxide；
6）Top embedded alloy quantum dot：
In annealing furnace, 400-600 DEG C is added reducing agent annealing 3-5 h, is formed and is closed on the top nucleocapsid nano wire for do not evaporate Sn
The classification superstructure that golden quantum dot is inlayed；
7）It is prepared by passivation layer：
In ALD system, Al is coated2O3As surface passivation layer one layer of stable SEI is formed on the nanometer hierarchical structure surface of preparation
Film.
7. silicon substrate wide spectrum according to claim 5 absorbs the preparation method of optical-thermal conversion material, it is characterised in that：3）
In step, deposition Si/Ge materials use chemical vapor deposition CVD, plasma activated chemical vapour deposition PECVD or physical vapour deposition (PVD)
PVD。
8. silicon substrate wide spectrum according to claim 5 absorbs the preparation method of optical-thermal conversion material, it is characterised in that：5）
In step, the nano wire grafted after silicon/germanium coated metal oxide is silicon nanowires or Ge nanoline.
9. silicon substrate wide spectrum according to claim 5 absorbs the preparation method of optical-thermal conversion material, it is characterised in that：6）
In step, the reducing agent is reducibility gas H2Or CO or reproducibility solid carbon dust/graphene/carbon nano-tube.
10. silicon substrate wide spectrum according to claim 5 absorbs the preparation method of optical-thermal conversion material, it is characterised in that：
1）In step, the growth substrate is stainless steel lining bottom/copper foil/foam copper/foam zinc/foamed iron etc..
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| CN110726262A (en) * | 2019-10-22 | 2020-01-24 | 陕西科技大学 | Photo-thermal conversion film, preparation method thereof and double-layer evaporation structure for solar steam generation |
| CN113292126A (en) * | 2021-04-22 | 2021-08-24 | 浙江浙能技术研究院有限公司 | Heat-gathering solar seawater desalination structure and method based on hydrophobic oxidized foamy copper |
| CN113790538A (en) * | 2021-08-27 | 2021-12-14 | 中南大学 | Photo-thermal conversion film and preparation method and application thereof |
| CN115566251A (en) * | 2022-09-29 | 2023-01-03 | 重庆邮电大学 | Flexible all-solid-state photo-thermal lithium-sulfur battery capable of working at low temperature and preparation method thereof |
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| CN113790538A (en) * | 2021-08-27 | 2021-12-14 | 中南大学 | Photo-thermal conversion film and preparation method and application thereof |
| CN115566251A (en) * | 2022-09-29 | 2023-01-03 | 重庆邮电大学 | Flexible all-solid-state photo-thermal lithium-sulfur battery capable of working at low temperature and preparation method thereof |
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