CN108390133A - Terahertz bandpass filter - Google Patents
Terahertz bandpass filter Download PDFInfo
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- CN108390133A CN108390133A CN201810143227.XA CN201810143227A CN108390133A CN 108390133 A CN108390133 A CN 108390133A CN 201810143227 A CN201810143227 A CN 201810143227A CN 108390133 A CN108390133 A CN 108390133A
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- Prior art keywords
- resonator
- bandpass filter
- bar shaped
- dielectric layer
- terahertz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2005—Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]
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- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The present invention relates to the Terahertz communications fields, provide a kind of Terahertz bandpass filter, including filter cell structure, and the filter cell structure includes the first resonator, dielectric layer, the second resonator being cascading；First resonator includes being equipped with the metallic plate for emptying figure, second bar shaped for emptying figure and including the first bar shaped and extending from the both ends of first bar shaped perpendicular to first bar shaped, and first resonator is identical as the structure of the second resonator.The present invention realizes the wide filtered band of Terahertz bandpass filter, and can be suitable for broadband connections by using equipped with first resonator dielectric layer the second resonator shaping filter cellular construction for emptying figure.
Description
Technical field
The present invention relates to the Terahertz communications fields, more particularly to a kind of Terahertz bandpass filter.
Background technology
THz wave refer to frequency 0.1THz~10THz, wavelength within the scope of 30um~3mm between microwave with it is infrared
Electromagnetic wave between line.The artificial electromagnetic material that Meta Materials are made of the sub-wavelength cellular construction of periodic arrangement, with routine
Nature material is different, has the special electromagnetic property such as negative refractive index and negative magnetic conductivity, by metamaterial modular construction
The tuning to electromagnetic wave and control may be implemented in the control of geomery and material component.
The existing various THz devices based on Meta Materials, such as terahertz filter, Terahertz absorber and Terahertz tune
The Terahertzs function element such as humorous device.Wherein terahertz filter is due in fields such as high-frequency communication, safety detection and radiation detections
It is taken seriously with important application value.But occurs most terahertz filters at present largely and is single band and more
Frequency band or tunable single band filter, filtered band is relatively narrow, in practical applications, such as broadband connections, receive serious system
About.
Invention content
Based on this, it is necessary to it is narrow for existing terahertz filter filtered band, be limited to the problems such as broadband connections, it provides
A kind of Terahertz bandpass filter.
A kind of Terahertz bandpass filter, including filter cell structure, the filter cell structure include layer successively
The first resonator, dielectric layer, the second resonator of folded setting；First resonator includes being equipped with the metallic plate for emptying figure,
The Article 2 for emptying figure and including the first bar shaped and extending from the both ends of first bar shaped perpendicular to first bar shaped
Shape, first resonator are identical as the structure of the second resonator.
The length of the metallic plate is 155um~165um in one of the embodiments, and thickness is 0.4um~0.6um,
Height is 165um~175um, and the direction of the length is first direction, and the direction of the height is second direction, described first
Bar shaped extends along the second direction, and second bar shaped extends along the first direction.
The dielectric constant of the dielectric layer is 2.5 in one of the embodiments,.
The loss angle tangent of the dielectric layer is 0.002 in one of the embodiments,.
The magnetic conductivity of the dielectric layer is 1 in one of the embodiments,.
The material of the dielectric layer includes at least one of silicon, quartz in one of the embodiments,.
The length of the dielectric layer is 155um~165um in one of the embodiments, and thickness is 40um~50um, high
Degree is 165um~175um.
The Terahertz bandpass filter includes multiple along first direction and second direction week in one of the embodiments,
The filter cell structure of phase arrangement, the direction that second bar shaped extends are the first direction, and first bar shaped extends
Direction be the second direction.
First resonator, dielectric layer, the second resonator pass through respective geometric center in one of the embodiments,
Normal overlap.
The metallic plate is metamaterial structure in one of the embodiments,.
Above-mentioned Terahertz bandpass filter, by using equipped with the-the second resonance of the first resonator-dielectric layer for emptying figure
Device shaping filter cellular construction, then by forming filter cell structure along first direction and second direction periodic arrangement
Terahertz bandpass filter makes Terahertz bandpass filter have the characteristic of Meta Materials, while realizing Terahertz bandpass filtering
The wide filtered band of device, and broadband connections can be suitable for.
Description of the drawings
Fig. 1 is the explosive view of the filter cell structure of Terahertz bandpass filter in an embodiment；
Fig. 2 is the planar structure schematic diagram of the Terahertz bandpass filter in an embodiment；
Fig. 3 is the plane mathematical illustraton of model of the filter cell structure in an embodiment；
Fig. 4 is the Terahertz bandpass filter transfer curve figure in an embodiment.
Specific implementation mode
To facilitate the understanding of the present invention, below with reference to relevant drawings to invention is more fully described.In attached drawing
Give the better embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein
Described embodiment.On the contrary, the purpose of providing these embodiments is that making to understand more the disclosure
Add thorough and comprehensive.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement for illustrative purposes only, are not offered as being unique embodiment.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.
Please refer to Fig.1 and Fig. 2, be in an embodiment explosive view of the filter cell structure of Terahertz bandpass filter and
The planar structure schematic diagram of Terahertz bandpass filter.A kind of Terahertz bandpass filter may include filter cell structure
10, wherein filter cell structure 10 may include：First resonator 100, dielectric layer 200 and the second resonator 300.The
One resonator 100, dielectric layer 200 and the second resonator 300 are cascading.
In one embodiment, the first resonator 100, dielectric layer 200 and the second resonator 300 pass through respective geometry
The normal at center overlaps.It is appreciated that the first resonator 100 is identical as the structure of the second resonator 300, in other words, first is humorous
Shake 300 shape of device 100 and the second resonator, construction all same.Illustrate by taking the concrete structure of the first resonator 100 as an example, first
Resonator 100 is to offer the metallic plate for emptying figure (Fig. 1 is not indicated), empty figure may include the first bar shaped 110 and from
The second bar shaped 120 that the both ends of first bar shaped extend perpendicular to the first bar shaped 110.In the embodiment shown in fig. 3, it empties
Figure includes the first bar shaped 110, third bar shaped 121, Article 4 shape 122.Third bar shaped 121, Article 4 shape 122 and the first bar shaped
110 collectively constitute I fonts.First resonator 100 is I font slot resonant element structures, can be by drawing I on a metal plate
Font sheet metal and obtain, the I fonts drawn can be processed to obtain by carrying out the technologies such as photoetching, plating on a metal plate.Its
In, metallic plate is overlapped with the geometric center of I font sheet metals.
In one embodiment, the material of metallic plate is with material well known to those skilled in the art, art technology
Personnel can select and adjust according to actual conditions and properties of product, the material of the preferred metallic plate of the present invention be gold, aluminium,
Silver, copper, more preferably gold, aluminium, silver, most preferably gold, silver.The shape of metallic plate is not particularly limited in the present invention, with this
Shape known to field technology personnel, those skilled in the art can select according to actual conditions and properties of product
And adjustment, the shape of the preferred metallic plate of the present invention is cuboid, square, more preferably cuboid；Wherein, it illustratively enumerates
The length of parameter when the shape of metallic plate is cuboid, metallic plate can be 160um, and thickness can be 0.5um, highly may be used
Think 170um.Here can be using the direction of metallic plate length as first direction, the direction of height is second direction, the first bar shaped
110 extend in a second direction, and the second bar shaped extends in a first direction.It is appreciated that first direction here, second direction can be with
For horizontally and vertically.
In one embodiment, the form parameter of metallic plate is with form parameter well known to those skilled in the art, originally
Field technology personnel can select and adjust according to actual conditions and properties of product, the shape of the preferred metallic plate of the present invention
Parameter selection can be that length is 155um~165um, and thickness is 0.4um~0.6um, is highly 165um~175um.More preferably
It is 155um~160um that the form parameter of metallic plate, which chooses length, and thickness is 0.4um~0.5um, is highly 165um~170um,
It is 160um~165um that the form parameter of most preferred metal plate, which chooses length, and thickness is 0.5um~0.6um, highly for 170um~
175um.It is appreciated that the structure of the first resonator 100 and the second resonator 300, material composition are by an equal amount of gold
Belong to plate to draw the I fonts sheet metal of same size and obtain, so structure, the shape of the first resonator 100 and the second resonator 300
Shape all same, gold before being referred to for the description of the shape, form parameter of the first resonator 100 and the second resonator 200
The narration for belonging to the shape, form parameter of plate, just no longer excessively repeats herein.It is appreciated that in other embodiments, can also be
The metallic plate of different size draws the I font sheet metals of same size, and the geometric center of I fonts sheet metal and metallic plate
The geometric center of the first resonator and the second resonator that overlap, and formed is on the same line.
In one embodiment, Terahertz bandpass filter may include multiple along first direction and second direction period row
The filter cell structure 10 of row, here using the direction that the second bar shaped 120 extends as first direction, the first bar shaped 110 extends
Direction as second direction.It is appreciated that 10 quantity arranged in the first direction of filter cell structure and in a second direction
The quantity of arrangement can be identical, can not also be identical, for example, the situation that quantity is equal：Filter cell structure 10 is along first party
To arrangement 10,10 are arranged in a second direction；Situation in varying numbers：Filter cell structure 10 is along first direction arrangement 12
It is a, 13 are arranged in a second direction.The number that the present invention arranges filter cell structure 10 along first direction and second direction
Amount is not particularly limited, and with quantity well known to those skilled in the art, those skilled in the art can be according to practical operation
It needs to be selected and adjusted with properties of product.
Fig. 3 is please referred to, is the plane mathematical illustraton of model of the filter cell structure in an embodiment.As shown in Figure 3, divide
The model parameter of the filter cell structure in the present embodiment is not indicated with Lx, Ly, a, b, b1, w.Wherein, Lx indicates filtering
The length of device cellular construction 10.Ly indicates the height of filter cell structure 10.A indicates third bar shaped 121 and Article 4 shape 122
It is long；B indicates that the length of the first bar shaped 110, b1 indicate the width of third bar shaped 121 and Article 4 shape 122；W indicates the first bar shaped 110
It is wide.It is appreciated that the model parameter of filter cell structure 10 is not particularly limited in the present invention, with those skilled in the art
Well known model parameter, those skilled in the art can select and adjust according to actual conditions and properties of product,
Preferred 155um~the Lx of the present invention~165um, 165um~Ly~175um, 115um~a~125um, 105um~b~115um,
18um~b1~22um, 30um~w~34um, more preferably 155um~Lx~160um, 165um~Ly~170um, 115um
~a~120um, 105um~b~110um, 18um~b1~20um, 30um~w~32um, most preferably 160um~Lx~
165um, 165um~Ly~170um, 120um~a~125um, 110um~b~115um, 20um~b1~22um, 32um~w
~34um.Illustratively, the specific knot of currently preferred filter cell structure once is described with specific parameter model
Structure can be for the selection of each model parameter of filter cell structure：Lx=160um, Ly=170um, a=120um, b
=110um, b1=20um, w=32um.It is preferred that such parameter can make the overall performance of filter cell structure reach most
It is excellent, and in the micron-scale due to selection of dimension, so filter overall dimensions will not be made excessive.
In one embodiment, dielectric layer 200 can be non-conductive material, and the present invention does not have the material of dielectric layer 200
Have special limitation, with material well known to those skilled in the art, those skilled in the art can according to actual conditions and
Properties of product are selected and are adjusted, and the material of the preferred dielectric layer of the present invention is silicon, quartz, most preferably silicon.It usually weighs and is situated between
Some key parameters of matter layer performance are dielectric constant, loss angle tangent and magnetic conductivity.Medium will produce sense in extra electric field
It answers charge and weakens electric field, it is relative dielectric constant that the electric field in medium, which reduces with the ratio of former extra electric field (in vacuum),
(relative permittivity or dielectric constant), also known as permitivity, with frequency dependence.Dielectric constant is
Relative dielectric constant and absolute dielectric constant product in vacuum, with εrIt indicates.Loss angle tangent is also known as dielectric loss angle tangent, is situated between
Electrical loss angle tangent.The physical quantity for characterizing dielectric substance dielectric loss size after applying an electric field, is indicated with tan δ, and δ is Jie
Electrical loss angle.It characterizes the ratio between the energy Yu its storing energy of dielectric loss in each period.Magnetic conductivity indicates that magnetic medium is magnetic
Physical quantity.Magnetic permeability μ is equal to the ratio between the differential of the differential and magnetic field intensity H of magnetic induction density B in magnetic medium, i.e. μ=dB/
dH.The dielectric constant of dielectric layer 200 is not particularly limited in the present invention, is with dielectric constant well known to those skilled in the art
Can, those skilled in the art can select and adjust according to actual conditions and properties of product, currently preferred dielectric
Constant is 2.5.The loss angle tangent of dielectric layer 200 is not particularly limited in the present invention, with well known to those skilled in the art
Loss angle tangent, those skilled in the art can select and adjust, this hair according to actual conditions and properties of product
Bright preferred loss angle tangent is 0.002.The magnetic conductivity of dielectric layer 200 is not particularly limited in the present invention, with art technology
Magnetic conductivity known to personnel, those skilled in the art can select and adjust according to actual conditions and properties of product
Whole, the preferred magnetic conductivity of the present invention is 1.
Above-mentioned Terahertz bandpass filter, by using equipped with the-the second resonance of the first resonator-dielectric layer for emptying figure
Device shaping filter cellular construction, then by forming filter cell structure along first direction and second direction periodic arrangement
Terahertz bandpass filter makes Terahertz bandpass filter have the characteristic of Meta Materials, while realizing Terahertz bandpass filtering
The wide filtered band of device, and broadband connections can be suitable for.
In order to make the present invention describe more detailed, the principle of the present invention is further described with reference to Fig. 4.
Referring to Fig. 4, for the Terahertz bandpass filter transfer curve figure in an embodiment.Based on above-described embodiment
Description set specific simulated conditions by establishing the model of filter cell structure in 3 D electromagnetic simulation software,
Apply magnetic field in X-direction, applies electric field in Y direction, (i.e. electromagnetic wave is along Z for electromagnetic wave vertical incidence to filter surface
Axis direction is incident on filter surface).The variation that Terahertz bandpass filter transmitance-frequency of the present invention is obtained by emulation is closed
It is curve.As shown in figure 4, can know from figure, centre frequency f0It is approximately equal to 1.07THz, and the 3dB of filter band stopbands are wide
For 440GHz, corresponding frequency is 0.85THz~1.29THz, corresponding wavelength 23.2mm~35.3mm, and bandwidth enumerates electricity
Magnetic wave atmospheric window 90GHz, to sum up it is known that the present invention is bandpass filter, and it is point-to-point to can be applied to millimeter wave
In communication system.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Cannot the limitation to the scope of the claims of the present invention therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of Terahertz bandpass filter, which is characterized in that including filter cell structure, the filter cell structure packet
Include the first resonator, dielectric layer, the second resonator being cascading；First resonator includes being equipped with to empty figure
Metallic plate, the figure of emptying include the first bar shaped and extend from the both ends of first bar shaped perpendicular to first bar shaped
Second bar shaped, first resonator are identical as the structure of the second resonator.
2. Terahertz bandpass filter according to claim 1, which is characterized in that the length of the metallic plate is 155um
~165um, thickness are 0.4um~0.6um, are highly 165um~175um, and the direction of the length is first direction, the height
The direction of degree is second direction, and first bar shaped extends along the second direction, and second bar shaped is along the first direction
Extend.
3. Terahertz bandpass filter according to claim 1, which is characterized in that the dielectric constant of the dielectric layer is
2.5。
4. Terahertz bandpass filter according to claim 1, which is characterized in that the loss angle tangent of the dielectric layer is
0.002。
5. Terahertz bandpass filter according to claim 1, which is characterized in that the magnetic conductivity of the dielectric layer is 1.
6. Terahertz bandpass filter according to claim 1, which is characterized in that the material of the dielectric layer include silicon,
At least one of quartz.
7. Terahertz bandpass filter according to claim 1, which is characterized in that the length of the dielectric layer is 155um
~165um, thickness are 40um~50um, are highly 165um~175um.
8. Terahertz bandpass filter according to claim 1, which is characterized in that the Terahertz bandpass filter includes
Multiple filter cell structures along first direction and second direction periodic arrangement, the direction that second bar shaped extends is described
First direction, the direction that first bar shaped extends are the second direction.
9. Terahertz bandpass filter according to claim 1, which is characterized in that first resonator, dielectric layer,
Normal of two resonators Jing Guo respective geometric center overlaps.
10. Terahertz bandpass filter according to claim 1, which is characterized in that the metallic plate is metamaterial structure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810143227.XA CN108390133A (en) | 2018-02-11 | 2018-02-11 | Terahertz bandpass filter |
| PCT/CN2018/081093 WO2019153456A1 (en) | 2018-02-11 | 2018-03-29 | Terahertz band-pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810143227.XA CN108390133A (en) | 2018-02-11 | 2018-02-11 | Terahertz bandpass filter |
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| CN108390133A true CN108390133A (en) | 2018-08-10 |
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| CN201810143227.XA Pending CN108390133A (en) | 2018-02-11 | 2018-02-11 | Terahertz bandpass filter |
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| WO (1) | WO2019153456A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111896479A (en) * | 2020-09-07 | 2020-11-06 | 北京邮电大学 | Terahertz chiral discrimination device and circular polarization selector |
| CN114126393A (en) * | 2021-11-29 | 2022-03-01 | 安徽大学 | Broadband terahertz wave absorber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112739186B (en) * | 2020-12-22 | 2023-08-22 | 博微太赫兹信息科技有限公司 | Metamaterial wave-absorbing structure for enhancing absorption and reducing surface radiation |
| CN115020946B (en) * | 2022-05-25 | 2023-09-29 | 桂林电子科技大学 | S-shaped metal structure band-stop filter with notch |
| CN116940093A (en) * | 2023-05-23 | 2023-10-24 | 安徽大学 | Broadband microwave absorber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202034461U (en) * | 2011-04-01 | 2011-11-09 | 中国计量学院 | Periodic terahertz wave filter in I-shaped hollow-out structure |
| CN103490125A (en) * | 2013-10-12 | 2014-01-01 | 电子科技大学 | Multilayer complementary structure terahertz band-pass filter based on frequency selective surface |
| CN106025454A (en) * | 2016-05-06 | 2016-10-12 | 中国工程物理研究院电子工程研究所 | Improved Jerusalem cross unit double-layer FSS structure |
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2018
- 2018-02-11 CN CN201810143227.XA patent/CN108390133A/en active Pending
- 2018-03-29 WO PCT/CN2018/081093 patent/WO2019153456A1/en active Application Filing
Non-Patent Citations (6)
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111896479A (en) * | 2020-09-07 | 2020-11-06 | 北京邮电大学 | Terahertz chiral discrimination device and circular polarization selector |
| CN114126393A (en) * | 2021-11-29 | 2022-03-01 | 安徽大学 | Broadband terahertz wave absorber |
| CN114126393B (en) * | 2021-11-29 | 2024-05-14 | 安徽大学 | Broadband terahertz wave absorber |
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| WO2019153456A1 (en) | 2019-08-15 |
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