CN108389966A - Prevent the method and system of solar cell short circuit - Google Patents
Prevent the method and system of solar cell short circuit Download PDFInfo
- Publication number
- CN108389966A CN108389966A CN201810142249.4A CN201810142249A CN108389966A CN 108389966 A CN108389966 A CN 108389966A CN 201810142249 A CN201810142249 A CN 201810142249A CN 108389966 A CN108389966 A CN 108389966A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- short circuit
- hole
- described hole
- preventing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/70—Testing, e.g. accelerated lifetime tests
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The application provides a kind of method and system preventing solar cell short circuit, including：The solar cell is detected, determines the position of the solar cell Hole；According to the position of described hole, described hole is performed etching.The method and system for preventing solar cell short circuit provided herein, detects the position where hole first, then according to the position where hole, is performed etching to described hole, to eliminate the electrode material of hole location, prevents electrode contact from causing short circuit.
Description
Technical field
This application involves technical field of solar batteries, more particularly to a kind of method for preventing solar cell short circuit and
System.
Background technology
With the development of society, the mankind are higher and higher to demand for energy, with fossil energies such as oil, coal and natural gases
Based on energy resource structure can not fully meet human wants.In addition, fossil energy is non-renewable energy resources, reserves are limited,
Development cost is high and use can cause the factors such as environmental pollution in the process, has been not suitable for current environmental protection concept trend.In order to more preferable
Solution energy problem, be developed many clean energy resourcies, such as：Wind energy, tide energy, geothermal energy, biomass energy, nuclear energy and
Solar energy etc..Wherein, due to technical complexity and cost effectiveness etc., solar energy is considered as most potential and Development volue
New cleaning fuel, is considered as one of the method for most foreground using photovoltaic generation, and presently the most burning hot photovoltaic technology is worked as
Belong to perovskite solar cell.
Due to the needs of perovskite solar cell module industrialization, the area of perovskite solar cell need to be increased.By
Increase in perovskite film forming area, filming control technology difficulty increases, causes quality of forming film to be declined, can be deposited in film forming procedure suddenly
In a small amount of hole (part i.e. without perovskite covering).These holes can be such that positive and negative electrode is in direct contact to cause battery short circuit existing
As, and then the electric current and voltage of perovskite solar cell are influenced, the serious generating efficiency for reducing perovskite solar cell.
Invention content
Based on this, it is necessary in view of the above technical problems, provide a kind of method that can prevent solar cell short circuit and
System.
The application provides a kind of method preventing solar cell short circuit, including：
The solar cell is detected, determines the position of the solar cell Hole；
According to the position of described hole, described hole is performed etching.
It is described in one of the embodiments, that the solar cell is detected, it determines in the solar cell
The position of hole, including：
The surface of the solar cell is radiated at by emitting light；
Detect the transmitted light after the transmitting excessively described solar cell of light transmission；
If the transmissivity of the transmitted light reaches predetermined threshold value, it is determined that there are holes for the solar cell.
The spot diameter of the transmitting light is 5 μm -15 μm in one of the embodiments,.
The wave-length coverage of the transmitting light is 400-800nm in one of the embodiments,.
The position according to described hole in one of the embodiments, to described hole into etching, including：
According to the position of described hole, using laser to described hole into etching.
The spot diameter of the laser is 5 μm -15 μm in one of the embodiments,.
Also a kind of system preventing solar cell short circuit of the application, including cavity detection device and laser ablation device；
Described hole detection device is used to detect the hole of the solar cell, and records the position of described hole；
The laser ablation device is for performing etching described hole according to the position of described hole.
Described hole detection device includes photophore and transmitted light detector in one of the embodiments, described to shine
Device and transmitted light detector are oppositely arranged, and the light that the photophore is sent out is radiated at the surface of the solar cell, and thoroughly
It was received by the transmitted light detector after penetrating the solar cell, the transmitted light detector is saturating according to the transmitted light
The rate of penetrating judges whether hole.
The light that the photophore is sent out in one of the embodiments, is monochromatic light.
The laser ablation device includes laser ablation device in one of the embodiments, and the laser ablation device passes through
Laser is sent out to perform etching described hole.
The above-mentioned method and system for preventing solar cell short circuit, detects the position where hole, then basis first
Position where hole, performs etching described hole, eliminates the electrode material of hole location, prevents electrode contact from causing short
Road.
Description of the drawings
Fig. 1 is the structure chart for the system that solar cell short circuit is prevented in one embodiment；
Fig. 2 is the schematic diagram of one embodiment Hole detection device；
Fig. 3 is the schematic diagram of laser ablation device in one embodiment；
Fig. 4 is the structure chart for the system that solar cell short circuit is prevented in one embodiment；
Fig. 5 is the flow chart that solar cell short circuit is prevented in one embodiment；
Fig. 6 is the flow chart of step S110 in one embodiment.
As shown in the figure：
The system that 10- prevents solar cell short circuit；20- solar cells；11- cavity detection devices；12- laser ablations
Device；13- control devices；111- photophores；112- transmitted light detectors；121- laser ablation devices；122- laser；The holes 200-
Hole.
Specific implementation mode
It is with reference to the accompanying drawings and embodiments, right in order to make the object, technical solution and advantage of the application be more clearly understood
The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not
For limiting the application.
The system provided by the present application for preventing solar cell short circuit, the hole that can be used for eliminating solar cell cause
Short circuit phenomenon.
In one embodiment, as shown in Figure 1, providing a kind of system 10 preventing solar cell short circuit, including hole
Hole detection device 11 and laser ablation device 12.Described hole detection device 11 is used to detect the hole of the solar cell 2
And record the position of described hole.The laser ablation device 12 is for carving described hole according to the position of described hole
Erosion.
The above-mentioned system 10 for preventing solar cell short circuit at work, is portalled first with the detection of cavity detection device 11
Position where hole, then laser ablation device 12 be moved at the position where hole, described hole is performed etching, is eliminated
The electrode material of hole location prevents electrode contact from causing short circuit.
In one embodiment, as shown in Fig. 2, described hole detection device 11 includes photophore 111 and transmission light detection
Device 112, the photophore 111 are oppositely arranged with the transmitted light detector 112, can be specifically that the photophore 111 is located at
The upper surface of the solar cell, the transmitted light detector 112 are located at the lower surface of the solar cell.It is described to shine
The light that device 111 is sent out is radiated at the surface of the solar cell 20, and described after the transmission of the solar cell 20
Transmitted light detector 112 receives.The transmitted light detector 112 judges whether hole 200 according to the transmissivity of the light.
The light that the photophore 111 is sent out is monochromatic light, and wave-length coverage 400-800nm has higher visibility.By
Smaller in the diameter of described hole 200, generally higher than 10 μm are less than 1000 μm, therefore spot diameter can be 5 μm -15 μm, from
And ensure will not missing inspection hole 200.The light that the photophore 111 is sent out can be in the form of straight line along the solar energy
The a certain surface scan of battery 20, can also be with a certain range of aperture to the surface scan of the solar cell 20.It is described
The light vertical irradiation that photophore 111 is sent out is on the surface of the solar cell 20.The photophore 111 can be Laser emission
Device can also be other types of luminescent device.
The transmitted light detector 112 can be the instrument that transmission rate test instrument etc. can detect transmissivity.
When described hole detection device 11 works, the photophore 111 and the solar cell 20 are with certain speed phase
To movement, in the present embodiment, the solar cell 20 is moved along direction shown in arrow.What the photophore 111 was sent out
Light gradually scans each position of the solar cell 20.The transmitted light detector 112 receives what each position penetrated
Light, to calculate the transmissivity of corresponding position.Entopic transmissivity is more than 20%, and the transmissivity of 200 position of hole is small
In equal to 20%, if the transmissivity of a certain position is less than or equal to 20%, then it is assumed that be herein hole 200, transmitted light detector
112 record position herein.
The position of described hole 200 is embodied in the form of orthogonal X, Y two-dimensional coordinate, the X, Y coordinates composition
Plane is scanned 20 surface of the solar cell, and the origin of the X, Y coordinates can be scanned solar cell
Any point on 20 surfaces.
In one embodiment, as shown in figure 3, the laser ablation device 12 includes laser ablation device 121, the laser
Etching device 121 sends out laser 122 and is performed etching to described hole 200, eliminates the electrode material at described hole 200, prevents institute
It states hole 200 and causes short circuit.The laser 122 that the laser ablation device 121 sends out a certain frequency is accurately positioned described hole 200,
And described hole 200 is performed etching.A diameter of 5 μm -15 μm of the laser 122, the frequency of the laser 122 can be according to reality
Border demand is chosen.
The laser ablation device 121 at work, learns the position of described hole 200 first, then moves to the hole
At the position in hole 200, laser vertically is sent out to the solar cell 20, described hole 200 is performed etching, to eliminate
State the electrode material of 200 above and or below of hole.
In one embodiment, as shown in figure 4, described to prevent the system 10 of solar cell short circuit further include control device
13, the control device 13 connects described hole detection device 11 and the laser ablation device 12, and controls described hole inspection
Survey the work of device 11 and the laser ablation device 12.The control device 13 can be microcontroller, Programmable logical controller
Device etc..After described hole detection device 11 records the position of described hole, the location information of described hole is fed back into the control
Device 13 processed, the control device 13 control the laser ablation device 12 and are moved at described hole position and order described sharp
Photoengraving device 12 sends out laser.
In one embodiment, the solar cell 20 can be perovskite solar cell, or other classes
The solar cell of type.The perovskite solar cell can be forward structure or inverted structure.The forward structure from
Under to being above followed successively by electrically conducting transparent substrate/electron transfer layer/calcium titanium ore bed/hole transmission layer/transparent electrode.The electrically conducting transparent
Substrate is the FTO (SnO of doping fluorine2) electro-conductive glass, ITO (tin indium oxide) electro-conductive glass, FTO conductive plastics or the modeling of ITO conductions
One kind in material.The electron transfer layer is SnO2Or TiO2In one kind.The perovskite is MAxFAyCs1-x-yPbI3-aBra、
MAxFAyCs1-x-yPbI3-bClbOr MAxFAyCs1-x-yPbBr3-cClc, the wherein value range of x, y can be 0~1, a, b, c's
Value range can be 0~3, and (structural formula of MA is CH3NH3 +, the structural formula of FA is CH (NH2)2 +).The hole transmission layer is
Any one in Spiro-MeOTAD or P3HT.The transparent electrode is any one in IWO (tungsten-doped indium oxide) or ITO
Kind.
The inverted structure is followed successively by electrically conducting transparent substrate/hole transmission layer/calcium titanium ore bed/electron-transport from top to bottom
Layer/transparent electrode.The electrically conducting transparent substrate is FTO electro-conductive glass, ITO electro-conductive glass, FTO conductive plastics or the modeling of ITO conductions
Any one in material.The hole transmission layer is NiOx, CuI, CuSCN, PEDOT:Any one in PSS, PTAA.It is described
Perovskite is MAxFAyCs1-x-yPbI3-aBra、MAxFAyCs1-x-yPbI3-bClbOr MAxFAyCs1-x-yPbBr3-cClc, wherein x, y
Value range can be 0~1, the value range of a, b, c can be that 0~3 (structural formula of MA is CH3NH3 +, the structural formula of FA
For CH (NH2)2 +).The electron transfer layer is fullerene and its derivative or low temperature TiO2, low temperature ZnO2, low temperature SnO2In
It is a kind of；The transparent electrode is any one in IWO or ITO.
In one embodiment, as shown in figure 5, providing a kind of method preventing solar cell short circuit, this method can
With the system for preventing solar cell short circuit described in any of the above-described embodiment of application, this approach includes the following steps：
S110：The solar cell is detected, determines the position of the solar cell Hole.
It is described that solar cell is detected, the cavity detection device described in any of the above-described embodiment, institute can be utilized
It states cavity detection device to be detected the solar cell to described, and determines the position of the solar cell Hole
It sets.
S120：According to the position of described hole, described hole is performed etching.
The position according to described hole performs etching described hole, can utilize described in any of the above-described embodiment
Laser ablation device.The laser ablation device is moved to the position of described hole, sends out laser and is carved to described hole
Erosion.
In one embodiment, as shown in fig. 6, the step S110, including：
S111：The surface of the solar cell is radiated at by emitting light.
The device of the transmitting light can be photophore, and the photophore sends out monochromatic light exposure in the solar cell
Surface.The monochromatic spot diameter is 5 μm -15 μm, wave-length coverage 400-800nm.The light that the photophore is sent out
Can be in the form of straight line along a certain surface scan of the solar cell, it can also be with a certain range of aperture pair
The surface scan of the solar cell 20.
S112：Detect the transmitted light after the transmitting excessively described solar cell of light transmission.
After the light of photophore transmitting light is radiated at the surface of solar cell, transmitted through the solar cell, this
Part is referred to as transmitted light through the light of solar cell.
S113：If the transmissivity of the transmitted light reaches predetermined threshold value, it is determined that there are holes for the solar cell.
The transmissivity of the transmitted light can be detected using transmitted light detector, the predetermined threshold value can be
20%, i.e., when the transmissivity is not more than 20%, then it is assumed that there are holes for solar cell.
The light that the photophore is sent out gradually scans each position of the solar cell.The transmitted light detector connects
The light that each position penetrates is received, to calculate the transmissivity of corresponding position.Entopic transmissivity is more than 20%, hole
The transmissivity of position is less than or equal to 20%, if the transmissivity of a certain position is less than or equal to 20%, then it is assumed that be herein hole, thoroughly
It penetrates photodetector and records position herein.
The position of described hole is embodied in the form of orthogonal X, Y two-dimensional coordinate, the plane of the X, Y coordinates composition
It is the scanned solar cell surface, the origin of the X, Y coordinates can be scanned solar cell surface
Any point.
In the step S120, after learning the position of described hole, the laser ablation device is moved to described hole
Position uses laser ablation to described hole.
The laser that the laser ablation device sends out a certain frequency is accurately positioned described hole, and is carved to described hole
Erosion eliminates the electrode material at described hole, prevents described hole from causing short circuit.A diameter of 5 μm -15 μm of the laser, institute
Stating the frequency of laser can choose according to actual demand.
It should be understood that although each step in the flow chart of Fig. 5-Fig. 6 is shown successively according to the instruction of arrow,
Be these steps it is not that the inevitable sequence indicated according to arrow executes successively.Unless expressly stating otherwise herein, these steps
There is no stringent sequences to limit for rapid execution, these steps can execute in other order.Moreover, in Fig. 5-Fig. 6 extremely
Few a part of step may include that either these sub-steps of multiple stages or stage are not necessarily same to multiple sub-steps
Moment executes completion, but can execute at different times, and the execution sequence in these sub-steps or stage is also not necessarily
It carries out successively, but can either the sub-step of other steps or at least part in stage in turn or are handed over other steps
Alternately execute.
One of ordinary skill in the art will appreciate that realizing all or part of flow in above-described embodiment method, being can be with
Relevant hardware is instructed to complete by computer program, the computer program can be stored in a non-volatile computer
In read/write memory medium, the computer program is when being executed, it may include such as the flow of the embodiment of above-mentioned each method.Wherein,
Any reference to memory, storage, database or other media used in each embodiment provided herein,
Including non-volatile and/or volatile memory.Nonvolatile memory may include read-only memory (ROM), programming ROM
(PROM), electrically programmable ROM (EPROM), electrically erasable ROM (EEPROM) or flash memory.Volatile memory may include
Random access memory (RAM) or external cache.By way of illustration and not limitation, RAM is available in many forms,
Such as static state RAM (SRAM), dynamic ram (DRAM), synchronous dram (SDRAM), double data rate sdram (DDRSDRAM), enhancing
Type SDRAM (ESDRAM), synchronization link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM
(RDRAM), direct memory bus dynamic ram (DRDRAM) and memory bus dynamic ram (RDRAM) etc..
Each technical characteristic of above example can be combined arbitrarily, to keep description succinct, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance
Shield is all considered to be the range of this specification record.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, under the premise of not departing from the application design, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the protection domain of the application patent should be determined by the appended claims.
Claims (10)
1. a kind of method preventing solar cell short circuit, which is characterized in that including：
The solar cell is detected, determines the position of the solar cell Hole；
According to the position of described hole, described hole is performed etching.
2. the method according to claim 1 for preventing solar cell short circuit, which is characterized in that described to the solar energy
Battery is detected, and determines the position of the solar cell Hole, including：
The surface of the solar cell is radiated at by emitting light；
Detect the transmitted light after the transmitting excessively described solar cell of light transmission；
If the transmissivity of the transmitted light reaches predetermined threshold value, it is determined that there are holes for the solar cell.
3. the method according to claim 2 for preventing solar cell short circuit, which is characterized in that the hot spot of the transmitting light
A diameter of 5 μm -15 μm.
4. the method according to claim 2 for preventing solar cell short circuit, which is characterized in that the wavelength of the transmitting light
Ranging from 400-800nm.
5. the method according to claim 1 for preventing solar cell short circuit, which is characterized in that described according to described hole
Position, to described hole into etching, including：
According to the position of described hole, using laser to described hole into etching.
6. the method according to claim 5 for preventing solar cell short circuit, which is characterized in that the hot spot of the laser is straight
Diameter is 5 μm -15 μm.
7. a kind of system preventing solar cell short circuit, including cavity detection device and laser ablation device；
Described hole detection device is used to detect the hole of the solar cell, and records the position of described hole；
The laser ablation device is for performing etching described hole according to the position of described hole.
8. the system according to claim 7 for preventing solar cell short circuit, which is characterized in that described hole detection device
Including photophore and transmitted light detector, the photophore and transmitted light detector are oppositely arranged, the light that the photophore is sent out
It is radiated at the surface of the solar cell, and transmitted through being received by the transmitted light detector after the solar cell,
The transmitted light detector judges whether hole according to the transmissivity of the transmitted light.
9. the system according to claim 7 for preventing solar cell short circuit, which is characterized in that the photophore was sent out
Light is monochromatic light.
10. the system according to claim 7 for preventing solar cell short circuit, which is characterized in that the laser ablation dress
It sets including laser ablation device, the laser ablation device performs etching described hole by sending out laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810142249.4A CN108389966A (en) | 2018-02-11 | 2018-02-11 | Prevent the method and system of solar cell short circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810142249.4A CN108389966A (en) | 2018-02-11 | 2018-02-11 | Prevent the method and system of solar cell short circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108389966A true CN108389966A (en) | 2018-08-10 |
Family
ID=63068793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810142249.4A Pending CN108389966A (en) | 2018-02-11 | 2018-02-11 | Prevent the method and system of solar cell short circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108389966A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116936396A (en) * | 2023-09-06 | 2023-10-24 | 信基科技(北京)有限公司 | Device and method for identifying and processing defects of thin film solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789465A (en) * | 2010-01-08 | 2010-07-28 | 中山大学 | Defect remedying method of crystalline silicon solar cell |
| CN102144284A (en) * | 2008-08-19 | 2011-08-03 | Bt成像股份有限公司 | Method and apparatus for defect detection |
| CN102197311A (en) * | 2008-08-29 | 2011-09-21 | 奥德森公司 | System and method for localizing and passivating defects in a photovoltaic element |
| CN102983089A (en) * | 2011-09-06 | 2013-03-20 | 株式会社岛津制作所 | Solar battery unit inspection device |
-
2018
- 2018-02-11 CN CN201810142249.4A patent/CN108389966A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102144284A (en) * | 2008-08-19 | 2011-08-03 | Bt成像股份有限公司 | Method and apparatus for defect detection |
| CN102197311A (en) * | 2008-08-29 | 2011-09-21 | 奥德森公司 | System and method for localizing and passivating defects in a photovoltaic element |
| CN101789465A (en) * | 2010-01-08 | 2010-07-28 | 中山大学 | Defect remedying method of crystalline silicon solar cell |
| CN102983089A (en) * | 2011-09-06 | 2013-03-20 | 株式会社岛津制作所 | Solar battery unit inspection device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116936396A (en) * | 2023-09-06 | 2023-10-24 | 信基科技(北京)有限公司 | Device and method for identifying and processing defects of thin film solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4640002A (en) | Method and apparatus for increasing the durability and yield of thin film photovoltaic devices | |
| CN106910827A (en) | A kind of perovskite solar module and preparation method thereof | |
| CN108389966A (en) | Prevent the method and system of solar cell short circuit | |
| KR20200086506A (en) | Semitransparent perovskite solar cell, solar cell module comprising the same and glass window with the solar cell module | |
| CN102439467B (en) | Electric and the photoelectron of large-scale semiconductor device characterizes | |
| US20130314093A1 (en) | Method and system employing a solution contact for measurement | |
| EP0087776B1 (en) | Method and apparatus for increasing the durability and yield of thin film photovoltaic devices | |
| CN109841736A (en) | One kind accurately constructing organic heterojunction resistive memory and its application based on electrochemical method | |
| CN105322091A (en) | Optical-write-in resistive random storage unit, as well as preparation and operation methods and application thereof | |
| Singh et al. | Attaining above 30% efficiency of PbS-based colloidal quantum dot solar cell using MoO3 and SnO2 as charge transport layers: a numerical approach | |
| JP2007265826A (en) | Dye-sensitized solar cell and its photoelectrode substrate | |
| Pascual Sánchez | Crystalline silicon Heterojunction solar cells | |
| US8946846B2 (en) | Thin film photovoltaic panels and repair methods | |
| Rahmani et al. | Comparison between ideal and estimated pv parameters using evolutionary algorithms to save the economic costs | |
| CN206116433U (en) | Photoelectric detector and photoelectric detection device | |
| Sesa | A novel electrical model for organic photovoltaic cells | |
| CN112436010A (en) | Flexible memory based on two-dimensional material | |
| Ourahmoun | Simulation of the Electrical Parameters of Organic Photovoltaic Cells under QUCS and GPVDM Software | |
| CN117709132B (en) | Diagnostic method for internal loss mechanism of solar cell | |
| Tsin et al. | Electrodeposited zinc grid as low‐cost solar cell front contact | |
| Jia et al. | Electroluminescence imaging of laser induced defect formation in Cu (In, Ga) Se2 solar cell | |
| McMahonx et al. | Metastable shunt paths in a-Si solar cells | |
| Asadpour | Exploring the Potential of Low-Cost Perovskite Cells and Improved Module Reliability to Reduce Levelized Cost of Electricity | |
| Kováč et al. | Fabrication and characterization of Si/SiO/TiO/ZnO heterostructures from sputtered and oxidized Ti-film | |
| Abodunrin et al. | Metaheuristic conformal solutions for organic photovoltaic I–V curve tracers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200226 Address after: 215300, No. 199, Feng Feng Road, Yushan Town, Kunshan, Jiangsu, Suzhou Applicant after: Kunshan GCL photoelectric materials Co.,Ltd. Address before: East Road, Suzhou City Industrial Park in Jiangsu province 215000 building N3 No. 88 1-3 Applicant before: SUZHOU GCL NANO TECHNOLOGY CO.,LTD. Applicant before: SUZHOU GCL ENERGY TECHNOLOGY DEVELOPMENT Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180810 |
|
| RJ01 | Rejection of invention patent application after publication |