CN108385071B

CN108385071B - Gas supply device and method

Info

Publication number: CN108385071B
Application number: CN201710063581.7A
Authority: CN
Inventors: 李乾铭; 陈俊吉; 林世杰
Original assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Current assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date: 2017-02-03
Filing date: 2017-02-03
Publication date: 2020-08-21
Anticipated expiration: 2037-02-03
Also published as: CN108385071A

Abstract

A gas supply device comprises a gas supply head, a first disc, a second disc and a rotary actuator. The first disc body is provided with at least one opening. The opening of the first disk overlaps with a projection of the second disk on the gas supply head. The second disc includes a plurality of sectors. The fan-shaped areas are arranged along the angular direction of the second disc body, and the air holes in the fan-shaped areas are distributed differently. The rotary actuator is configured to drive the first disk, the second disk, or a combination thereof such that the first disk and the second disk are relatively rotated in an angular direction.

Description

Gas supply device and method

Technical Field

The present disclosure relates to a gas supply device, and more particularly, to a gas supply device and a gas supply method thereof.

Background

In semiconductor processing, gas supply assemblies are commonly employed to provide appropriate gases (e.g., gaseous precursors) to a substrate to form a desired device. For example, a Magnetoresistive Random Access Memory (MRAM) typically includes a MTJ (Magnetic tunnel junction) structure. The mtj structure includes a plurality of magnetic layers or poles separated by nonmagnetic insulating layers. The insulating layer may be formed by performing an oxidation process on the metal. A typical oxidation process places a substrate to be oxidized in a gas supply chamber and then provides the substrate with an appropriate oxygen gas to form an appropriate oxide.

Disclosure of Invention

In some embodiments, a gas supply apparatus includes a gas supply head, a first plate, a second plate, and a rotary actuator. The first disc body is provided with at least one opening. The opening of the first disk overlaps with a projection of the second disk on the gas supply head. The second disc includes a plurality of sectors. The fan-shaped areas are arranged along the angular direction of the second disc body, and the air holes in the fan-shaped areas are distributed differently. The rotary actuator is configured to drive the first disk, the second disk, or a combination thereof such that the first disk and the second disk are relatively rotated in an angular direction.

In some embodiments, a gas supply apparatus includes a gas supply head, a first plate, a second plate, and a rotary actuator. The first tray body comprises a plurality of gas shielding parts. The gas shielding parts are arranged along the angular direction of the first disc body and define an opening therebetween. The second disk includes a plurality of local regions. The pore distribution in such local areas is different. One of these local areas overlaps the projection of the opening onto the gas supply head. The other of the local areas and the projection of the one of the gas shields on the gas supply head are overlapped. The rotary actuator is configured to drive the first disk, the second disk, or a combination thereof such that the first disk and the second disk are relatively rotated in an angular direction.

In some embodiments, a method of supplying gas includes providing gas to an exhaust port located above an upper disk body; rotating a lower tray body positioned below the upper tray body so that an opening of the lower tray body moves to a first local area of the upper tray body; and rotating the lower disc body to enable the opening of the lower disc body to move to a second local area of the upper disc body, wherein the air holes of the first local area and the second local area are distributed differently.

The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.

Drawings

FIG. 1 is a schematic view of a thin film forming apparatus according to some embodiments of the present disclosure;

FIG. 2 illustrates a top view of a first tray, according to some embodiments of the present disclosure;

FIG. 3 illustrates a top view of a second tray that may be used with the first tray, according to some embodiments of the present disclosure;

FIGS. 4A-9A are schematic views illustrating partial areas of a second tray exposed by openings of a first tray when the first tray is rotated to different orientations;

FIGS. 4B-9B are gas distribution diagrams on wafers corresponding to FIGS. 4A-9A, respectively;

FIG. 10 illustrates a flow diagram of a gas supply method according to some embodiments of the present disclosure;

FIG. 11 illustrates a top view of a first tray, according to some embodiments of the present disclosure;

FIG. 12 illustrates a top view of a second tray that may be used with the first tray, according to some embodiments of the present disclosure;

FIG. 13 illustrates a top view of a first tray, according to some embodiments of the present disclosure;

FIG. 14 illustrates a top view of a second tray that may be used with the first tray, according to some embodiments of the present disclosure;

FIG. 15 illustrates a top view of a second tray, according to some embodiments of the present disclosure;

FIG. 16 illustrates a top view of a second platter according to some embodiments of the present disclosure.

Wherein the reference numerals

10: wafer holding stage

11: base seat

12: electrostatic chuck

20: driving mechanism

21: support rotating shaft

22: actuator

30: target electrode

31: cathode magnet

40: inert gas source

50: gas supply device

100. 100a, 100 b: first disc body

101. 101a, 101 b: opening of the container

101 s: side wall

102. 102a, 102 b: gas shielding part

200. 200a, 200b, 200c, 200 d: second plate body

201. 202, 203, 201a, 202a, 203a, 201b, 202b, 203b, 201c, 202c, 203c, 201d, 202d, 203 d: air hole

201r, 202r, 203 r: arc wall

201s, 202s, 203 s: side wall

204. 205, 206: gas shielding part

207. 208, 209: auxiliary air hole

300: gas supply head

301: an outlet

302: inner wall of roof

400: rotary actuator

500: supply head driving mechanism

510: supply head rotating shaft

511: gas input pipe

520: actuator

600: gas source

A1, A2: annular region

A3: circular area

C: center of a ship

D1, D2: angular direction

M: metal target material

R1, R2, R3, R1a, R2a, R3a, R1b, R2b, R3b, R1c, R2c, R3c, R1d, R2d, R3 d: sector area

S1, S2, S3, S4: step (ii) of

W: wafer

α: first angular distance

Beta: second angular distance

Detailed Description

The spirit of the present disclosure will be described in detail with reference to the drawings and detailed description, and it will be apparent to one skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the present disclosure after understanding the embodiments of the present disclosure. For example, the description "a first feature is formed over or on a second feature", and embodiments will include the first feature and the second feature having direct contact; and will also include the first feature and the second feature being in non-direct contact, with additional features being formed between the first and second features. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Furthermore, relative terms, such as "below" …, "below," above, "upper" or the like, are used herein to facilitate describing the relationship of one element or feature to another element or feature as illustrated in the figures. Relative terms include different orientations of the device in use or operation in addition to the orientation depicted in the figures. As used herein, relative terms when the device is otherwise disposed (rotated 90 degrees or otherwise oriented), shall be interpreted accordingly.

It is to be understood that the following description will be made by taking a film (e.g., a metal oxide film) forming process as an example to help describe the gas supply apparatus provided in the embodiments of the present disclosure. However, the gas supply apparatus provided in the embodiments of the present disclosure is not limited to be applied to the process of forming the metal oxide thin film. For example, the gas supply apparatus provided in the embodiments of the present disclosure may also be applied in Chemical Vapor Deposition (CVD) or other processes capable of introducing gas.

FIG. 1 is a schematic diagram of a thin film forming apparatus according to some embodiments of the present disclosure. As shown in fig. 1, the thin film forming apparatus may include a wafer holding stage 10. The wafer holding stage 10 may be used to hold (or temporarily fix) a wafer W thereon. The wafer holding stage 10 may include a base 11 and an electrostatic chuck 12. The electrostatic chuck 12 is located on the base 11. The base 11 may have a temperature control feature therein, for example, the base 11 may have a cooling flow passage therein for a coolant to flow in the cooling flow passage. The electrostatic chuck 12 comprises an insulator and an electrode embedded in the insulator. The wafer W placed on the electrostatic chuck 12 can be attracted and held on the electrostatic chuck 12 by the electrostatic force generated by the electrode. The wafer holding stage 10 may further include a heater (not shown), which may include, but is not limited to, a heating resistor. Therefore, wafer holding stage 10 can hold wafer W and also heat wafer W. The heater of wafer holding stage 10 may be used to oxidize metal deposited on wafer W. That is, the wafer holding stage 10 can convert a metal thin film formed on the wafer W into a metal oxide thin film. For example, when the metal is magnesium, the wafer holding stage 10 may heat the wafer W to about 70 to 230 degrees celsius.

The wafer holding stage 10 is connected to a drive mechanism 20. The driving mechanism 20 includes a support shaft 21 and an actuator 22. One end of the support shaft 21 is fixed to the wafer holding stage 10, and the other end is connected to an actuator 22. The actuator 22 is capable of rotating and/or vertically moving (i.e., moving up and down) the support shaft 21. The central axis of the wafer holding stage 10 and the support spindle 21 may coincide. When the support shaft 21 rotates, the wafer holding stage 10 can rotate around the support shaft 21 as a shaft. When the support shaft 21 moves vertically, the wafer holding stage 10 can thus move vertically.

A metal target M may be provided above the wafer holding stage 10. In embodiments where an insulating layer of a Magnetic Tunnel Junction (MTJ) structure is formed, the metal target M may be magnesium. In other embodiments, the material of the metal target M may depend on the type of metal oxide thin film to be formed. The number of the metal targets M is not limited to that shown in fig. 1, and for example, the number of the metal targets M may be one or more. The metal target M may be attached to or in contact with the target electrode 30. Therefore, the metal target M is electrically coupled to the target electrode 30. The target electrode 30 may be located between the metal target M and the cathode magnet 31.

The film forming apparatus may include an inert gas source 40 for introducing an inert gas (e.g., argon) into the processing chamber in which the metal target M is located. The target electrode 30 can apply a voltage to the metal target M, and the inert gas can be excited by an electric field generated by the metal target M. When cathode magnet 31 is driven, cathode magnet 31 may generate a magnetic field around metal target M. Therefore, the plasma can be concentrated at a position close to the metal target M. The positive ions in the plasma impact the metal target M, so as to sputter the metal material of the metal target M, so that the metal material can be deposited on the wafer W.

The thin film forming apparatus further includes a gas supply device 50. The gas supply device 50 is capable of supplying gas into the processing chamber in which the wafer W is located. For example, the gas supply device 50 can supply oxygen gas toward the wafer holding stage 10 to oxidize the metal deposited on the wafer W, thereby forming a metal oxide film. For example, in the embodiment where the metal target M is magnesium, the gas supply device 50 can provide oxygen gas toward the magnesium deposited on the wafer W to form magnesium oxide on the wafer W. In other embodiments, the gas supply device 50 may be used to provide gases suitable for other processes, for example, the gas supply device 50 may be used to provide a precursor gas suitable for chemical vapor deposition (cvd).

In some embodiments, the gas supply device 50 may include a first tray 100, a second tray 200, a gas supply head 300, and a rotary actuator 400. The first plate 100 and the second plate 200 may be plates having openings or air holes, and the plates are disposed at the outlet 301 of the gas supply head 300. The first tray 100 and the second tray 200 at least partially overlap in projection on the gas supply head 300. For example, the gas supply head 300 has a top inner wall 302, and the projections of the first plate 100 and the second plate 200 on the top inner wall 302 are overlapped. In the embodiment shown in FIG. 1, the second platter 200 is positioned between the first platter 100 and the top interior wall 302 of the gas supply head 300. The second tray 200 is spaced apart from the top inner wall 302 such that the outlet 301 of the gas supply head 300 can extend between the second tray 200 and the top inner wall 302 to provide gas toward the second tray 200.

In some embodiments, the first disc 100 is coaxially aligned with the second disc 200, and the rotary actuator 400 is coupled to the first disc 100 such that the first disc 100 is able to rotate relative to the second disc 200. The first tray 100 has an opening 101. The openings 101 overlap with the projection of the second disk 200 onto the gas supply head 300. The distribution of air holes in different localized areas of the second disk 200 is different. When the opening 101 is located below the first local area, the second plate 200 may provide gas towards the wafer holding stage 10 by a first distribution of gas holes in the first local area. When the first disk 100 is rotated, the openings 101 move from the first local area to below the second local area of the second disk 200, so that the second disk 200 may provide gas towards the wafer holding stage 10 by means of a second distribution of gas holes in the second local area. Since the gas holes of the first distribution are different from the gas holes of the second distribution, the gas supply means can supply different gas distributions to the wafer holding stage 10. Thus, the position of the opening 101 of the first plate 100 can be controlled according to the oxide film forming condition on the wafer W, so as to continue forming the oxide film with a more appropriate gas distribution. That is, the position of the opening 101 of the first disk 100 may be controlled based on the gas distribution applied to the wafer W. In addition, since the formation of the metal oxide film may be performed through a plurality of metal deposition and oxidation processes, and the oxygen flow rate provided by each oxidation process is not necessarily the same, the gas supply device may control the position of the opening 101 of the first plate 100 according to different oxygen flow rates, so as to provide uniform oxygen distribution to the wafer W under various oxygen flow rates.

In the embodiment shown in fig. 1, the rotary actuator 400 is coupled to the first disc 100 such that the first disc 100 is rotatable relative to the second disc 200. In some embodiments, the rotary actuator 400 may also be coupled to the second disc 200 such that the second disc 200 is capable of rotating relative to the first disc 100. In some embodiments, the rotary actuator 400 may connect the first disc 100 and the second disc 200 and may drive the first disc 100 and the second disc 200 to rotate at different rotation speeds, such that the first disc 100 and the second disc 200 may rotate relatively.

Fig. 2 illustrates a top view of a first tray 100 according to some embodiments of the present disclosure, and fig. 3 illustrates a top view of a second tray 200 that may be used with the first tray 100 according to some embodiments of the present disclosure. As shown in fig. 3, the second tray 200 includes sector areas R1, R2 and R3. The scallops R1, R2 and R3 are arranged along an angular direction D2 of the second tray 200. The sectors R1, R2 and R3 may also be referred to as different local areas of the second tray 200, and the distribution of the air holes in the sectors R1, R2 and R3 is different. For example, the sector R1 has the air holes 201, the sector R2 has the air holes 202, and the sector R3 has the air holes 203, wherein the distances from the air holes 201, 202 and 203 to the center C of the second disk 200 are different.

Further, the sector R1 and the sector R2 are adjacent, and the distances from the air holes 201 of the sector R1 and the air holes 202 of the sector R2 to the center C of the second tray 200 are different. Similarly, the sector area R2 is adjacent to the sector area R3, and the air holes 202 of the sector area R2 are at a different distance from the air holes 203 of the sector area R3 to the center C of the second tray 200. For example, the distance from the air holes 201 to the center C of the second disk 200 is greater than the distance from the air holes 202 to the center C of the second disk 200, and the distance from the air holes 202 to the center C of the second disk 200 is greater than the distance from the air holes 203 to the center C of the second disk 200.

As shown in fig. 1-3, the rotary actuator 400 may drive the first tray 100 to rotate in the angular direction D2 of the second tray 200. Thereby, the opening 101 of the first tray 100 can move along the angular direction D2 to sequentially pass through the fan-shaped regions R1, R2 and R3. When the opening 101 of the first tray 100 moves to the sector R1, the gas holes 201 of the sector R1 are exposed by the opening 101, so that the gas provided by the gas supply head 300 can be exhausted to the wafer W on the wafer holding stage 10 through the gas holes 201 and the opening 101 in sequence. Similarly, when the first tray 100 is rotated in the angular direction D2 of the second tray 200 such that the opening 101 moves to the sector R2, the gas holes 202 of the sector R2 are exposed by the opening 101, so that the gas provided by the gas supply head 300 can be exhausted to the wafer W on the wafer-holding stage 10 through the gas holes 202 and the opening 101 in sequence. Similarly, when the first tray 100 is rotated in the angular direction D2 of the second tray 200 such that the opening 101 moves to the sector R3, the gas holes 203 of the sector R3 are exposed by the opening 101, so that the gas provided by the gas supply head 300 can be exhausted to the wafer W on the wafer holding stage 10 through the gas holes 203 and the opening 101 in sequence.

When the opening 101 is located below the sector R1, the gas holes 201 of the sector R1 are exposed by the opening 101, and the gas provided by the gas supply device 50 is concentrated in the outermost ring-shaped area a1 of the wafer W (as shown in fig. 1) because the gas holes 201 are farthest from the center C of the second tray 200. Similarly, when the opening 101 is located below the sector R2, the gas provided by the gas supply device 50 can be concentrated in the middle ring-shaped region a2 of the wafer W (as shown in fig. 1). Similarly, when the opening 101 is located in the sector R3, the gas provided by the gas supply device 50 can be concentrated in the innermost circular region A3 (shown in fig. 3) of the wafer W. It can be understood that the circular region A3, the annular region a2 and the annular region a1 are arranged on the wafer W in a concentric (concentric) manner sequentially from inside to outside. Therefore, the gas supply device 50 can selectively supply the gas to a specific circular or annular region on the wafer W in a concentrated manner, so as to control the gas concentration region of the wafer W according to the actual condition of film formation.

For example, refer to fig. 4A to 9A and fig. 4B to 9B, wherein fig. 4A to 9A are schematic diagrams illustrating local regions of the second tray 200 exposed by the openings 101 of the first tray 100 when the first tray 100 is rotated to different orientations, and fig. 4B to 9B are schematic diagrams illustrating gas distribution patterns on the wafer W corresponding to fig. 4A to 9A, respectively, wherein the horizontal axis represents different positions of the upper surface of the wafer W and may be in arbitrary units (A.U.), and the vertical axis represents the gas flux and may be in arbitrary units. In the state shown in fig. 4A, the opening 101 of the first tray 100 is located below the sector R1 of the second tray 200, and the opening 101 and the sector R1 completely overlap. That is, the air holes 201 of the sector R1 can be completely exposed by the opening 101. Since the gas holes 201 are located at the outermost position in the radial direction of the second plate 200, the gas supplied from the gas supply device 50 on the wafer W is concentrated in the outermost annular region of the wafer W, as shown in fig. 4B.

In the state shown in fig. 5A, the opening 101 of the first tray 100 is partially located below the sector R1 of the second tray 200 and partially located below the sector R2 of the second tray 200. That is, the air holes 201 of the fan-shaped region R1 may be partially exposed by the opening 101, and the air holes 202 of the fan-shaped region R2 may be partially exposed by the opening 101. Since the gas holes 201 are located at the outermost position in the radial direction of the second plate 200, and the gas holes 202 are located at the inner position (also referred to as the middle position) in the radial direction of the second plate 200 compared to the gas holes 201, the gas provided by the gas supply device 50 on the wafer W is partially concentrated on the outermost annular region of the wafer W and partially concentrated on the middle annular region of the wafer W, as shown in fig. 5B.

In the state shown in fig. 6A, the opening 101 of the first tray 100 is located below the sector R2 of the second tray 200, and the opening 101 and the sector R2 completely overlap. That is, the air holes 202 of the sector R2 can be completely exposed by the opening 101. Since the gas holes 202 are located at the middle position in the radial direction of the second plate 200, the gas supplied from the gas supply device 50 on the wafer W is concentrated in the middle ring-shaped area of the wafer W, as shown in fig. 6B.

In the state shown in fig. 7A, the opening 101 of the first tray 100 is partially located below the sector R2 of the second tray 200 and partially located below the sector R3 of the second tray 200. That is, the air holes 202 of the fan-shaped region R2 may be partially exposed by the opening 101, and the air holes 203 of the fan-shaped region R3 may be partially exposed by the opening 101. Since the gas holes 202 are located at the middle position in the radial direction of the second tray 200 and the gas holes 203 are located at the innermost position in the radial direction of the second tray 200, the gas supplied from the gas supplying device 50 on the wafer W is partially concentrated on the middle annular region of the wafer W and partially concentrated on the innermost circular region of the wafer W, as shown in fig. 7B.

In the state shown in fig. 8A, the opening 101 of the first tray 100 is located below the sector R3 of the second tray 200, and the opening 101 and the sector R3 completely overlap. That is, the air holes 203 of the sector R3 can be completely exposed by the opening 101. Since the gas holes 203 are located at the innermost position in the radial direction of the second plate 200, the gas supplied from the gas supply device 50 on the wafer W is concentrated in the innermost circular region of the wafer W, as shown in fig. 8B.

In fig. 9A, the opening 101 of the first tray 100 is partially located under the R3 sector of the second tray 200 and partially located under the R1 sector of the second tray 200. That is, the air holes 203 of the fan-shaped region R3 may be partially exposed by the opening 101, and the air holes 201 of the fan-shaped region R1 may be partially exposed by the opening 101. Since the gas holes 203 are located at the innermost position in the radial direction of the second tray 200 and the gas holes 201 are located at the outermost position in the radial direction of the second tray 200, the gas supplied from the gas supply device 50 on the wafer W is partially concentrated on the innermost circular region of the wafer W and partially concentrated on the outermost annular region of the wafer W, as shown in fig. 9B.

As shown in fig. 4A to 9A, the opening 101 of the first plate 100 can be moved under different partial areas or sectors of the second plate 200 by the rotation of the first plate 100, so that the opening 101 can expose different partial areas when the first plate 100 is rotated to different positions. Due to the different gas hole distributions of the different local areas (e.g., the radial positions of the gas holes of the different local areas on the second disk 200 are different), the wafer W can obtain different gas distributions as shown in fig. 4B to 9B. It is understood that in fig. 4A to 9A, the distribution of the air holes in the partial area of the second tray 200 exposed by the opening 101 is exemplary, and the disclosure is not limited thereto. Similarly, the different gas distributions shown in fig. 4B to 9B are also exemplary, and the disclosure is not limited thereto.

Referring back to FIG. 3, in some embodiments, the air holes 201 of the second plate 200 include two opposite sidewalls 201 s. The sidewalls 201s extend along a radial direction of the second disk 200, and may be referred to as radial sidewalls 201s, and the radial sidewalls 201s may define the air holes 201 therebetween. In other words, the two radial sidewalls 201s are substantially parallel to the radial direction of the second disk body 200, and thus, in some embodiments, the air holes 201 defined by the two radial sidewalls 201s may be annular sector (annular sector) air holes. Similarly, the air hole 202 may also include two opposite radial sidewalls 202s, and the air hole 202 defined by the two radial sidewalls 202s may be a ring sector air hole. The air holes 203 may include two radial sidewalls 203s, and the edges of the two radial sidewalls 203s are coincident with the center C of the second disk 200, so that the air holes 203 defined by the two radial sidewalls 203s may be sector-shaped (sector) air holes. In other embodiments, the air holes 203 may be ring fan shaped air holes. That is, in such an embodiment, the two radial sidewalls 203s of the gas hole 203 are not coincident.

Referring to fig. 2, the opening 101 of the first tray 100 includes two opposite sidewalls 101 s. The two sidewalls 101s also extend along the radial direction of the second disc 200, and may be referred to as radial sidewalls 101s, and the two radial sidewalls 101s may define the opening 101 therebetween. In other words, the two radial sidewalls 101s are substantially parallel to the radial direction of the second disk 200, and in some embodiments, the two radial sidewalls 101s may intersect, so that the opening 101 defined by the two radial sidewalls 101s may be a fan-shaped opening in some embodiments. In other embodiments, the opening 101 may be a ring sector opening. That is, in such an embodiment, the two radial sidewalls 101s of the opening 101 are non-intersecting.

In some embodiments, the central angle defined by the two sidewalls 201s of the air hole 201 is substantially equal to the central angle defined by the two sidewalls 101s of the opening 101. In other words, the central angle of the ring sector shaped air hole 201 is substantially equal to the central angle of the sector shaped opening 101. Therefore, the geometry (e.g., shape and/or size) of the gas holes 201 and the openings 101 may be more appropriately matched to provide more appropriate gas distribution. Similarly, the central angle defined by the two sidewalls 202s of the air hole 202 and/or the central angle defined by the two sidewalls 203s of the air hole 203 are substantially equal to the central angle defined by the two sidewalls 101s of the opening 101. Thus, the geometry of the gas holes 202 and/or 203 may be more appropriately matched with the geometry of the opening 101 to provide more appropriate gas distribution.

In some embodiments, the air hole 201 further comprises two opposing curved walls 201 r. The two curved walls 201r are substantially parallel to the angular direction D2 of the second tray 200. The two radial sidewalls 201s and the two curved walls 201r may together define the outermost annular sector shaped air hole 201. Similarly, the air hole 202 further includes two opposite arc-shaped walls 202 r. The two curved walls 202r are substantially parallel to the angular direction D2 and may cooperate with the two radial sidewalls 202s to define a central annular sector of the gas aperture 202. The air hole 203 further includes an arc-shaped wall 203r substantially parallel to the angular direction D2, and the arc-shaped wall 203r and the two radial sidewalls 203s together define the innermost sector-shaped air hole 203.

In some embodiments, angular direction D1 of first tray 100 is the same as angular direction D2 of second tray 200. The first disc 100 is rotatable in its angular direction D1. The first tray 100 includes a plurality of gas shields 102. The gas shields 102 are arranged along the angular direction D1 of the first plate 100, and the two gas shields 102 define the opening 101 therebetween. That is, one gas shield 102, one opening 101, and the other gas shield 102 are arranged along the angular direction D1 of the first tray 100 (or the angular direction D2 of the second tray 200). Thereby, when the first tray body 100 is rotated in the angular direction D1, the gas shielding part 102 may be moved to a different sector R1, R2 or R3 of the second tray body 200 to shield the gas holes of the sector, thereby providing proper gas distribution.

Stated another way, in some embodiments, one of the partial regions R1, R2, and R3 of the second tray 200 overlaps the projection of the opening 101 onto the gas supply head 300 (see fig. 1), and another of the partial regions R1, R2, and R3 overlaps the projection of the gas shield 102 onto the gas supply head 300. Thus, when the first tray 100 rotates, the gas blocking portion 102 may move to both of the partial regions R1, R2, and R3 of the second tray 200, and the opening 101 may move to the partial region not blocked by the gas blocking portion 102.

In some embodiments, the gas shield 102 is fan-shaped to shield the ring fan holes 201 or 202, or the fan holes 203. Further, in some embodiments, the central angle of the opening 101 is substantially equal to the central angle of at least one of the air holes 201, 202, and 203. Thus, the opening 101 can just expose one of the air holes 201, 202 and 203.

In some embodiments, the scalloped area R1 of the second disk 200 contains a gas curtain 204. The gas shielding portion 204 can shield gas, and the gas shielding portion 204 and the gas holes 201 are arranged along a radial direction of the second disk 200. For example, the gas curtain 204 is closer to the center C of the second disk 200 than the gas holes 201. In some embodiments, the gas curtain 204 may be fan-shaped.

In some embodiments, the scalloped area R2 of the second disk 200 contains a plurality of gas blinders 205. The gas shields 205 are used to shield gas, and the gas shields 205 and the gas holes 202 are arranged along the radial direction of the second disk 200. For example, the gas hole 202 is located between two gas shields 205. In some embodiments, the gas shield 205 located on a side of the gas hole 202 away from the center C may be a ring sector, and the gas shield 205 located between the gas hole 202 and the center C may be a sector.

In some embodiments, the scalloped area R3 of the second disk 200 contains the gas curtain 206. The gas blocking portion 206 may block gas, and the gas blocking portion 206 and the gas holes 203 are arranged along a radial direction of the second disk 200. For example, the gas curtain 206 is farther from the center C of the second disk 200 than the gas holes 203. In some embodiments, the gas curtain 206 may be a ring sector. Since the positional relationship of the gas holes 201 and the gas shielding portion 204, the positional relationship of the gas holes 202 and the gas shielding portion 205, and the positional relationship of the gas holes 203 and the gas shielding portion 206 are different from each other, the sector areas R1, R2, and R3 may have different gas hole distributions.

In some embodiments, the gas holes 201, 202 and 203 do not overlap in the radial direction of the second disk 200, which may facilitate concentrated gas supply to the outermost annular region a1, the middle annular region a2 or the innermost circular region A3 of the wafer W. It can be appreciated that in the embodiment shown in FIG. 3, the second disk 200 has three different radial locations of the gas holes (i.e., gas holes 201-203) on the second disk 200, but in other embodiments, the second disk 200 may have two or more than four different radial locations of the gas holes on the second disk 200.

In some embodiments, the first tray body 100 has a plurality of openings 101. Adjacent openings 101 are separated by a first angular distance a. The second tray 200 has a plurality of air holes 201, and the air holes 201 are substantially equidistant from the center C of the second tray 200. For example, the air holes 201 are all air holes on the outermost annular region of the second disk 200. Adjacent air holes 201 are separated by a second angular distance β. The first angular distance a is substantially equal to the second angular distance β. In this way, when one opening 101 moves to a position below any one of the gas holes 201, the remaining openings 101 are located just below the remaining gas holes 201, respectively, so as to provide gas to the outermost annular region a1 of the wafer W. Similarly, the second disk 200 has a plurality of air holes 202 located on its middle annular region. Adjacent air holes 202 are also separated by a second angular distance β that is substantially equal to the first angular distance α. As such, when one opening 101 moves below any one of the gas holes 202, the remaining openings 101 are located just below the remaining gas holes 202, respectively, thereby facilitating the gas supply to the middle annular region a2 of the wafer W. Similarly, the second disk 200 has a plurality of air holes 203 on the innermost circular area thereof. Adjacent air holes 203 are also separated by a second angular distance β that is substantially equal to the first angular distance α. In this way, when one opening 101 moves to a position below any of the gas holes 203, the remaining openings 101 are located just below the remaining gas holes 203, respectively, so as to provide gas to the innermost circular area a3 of the wafer W.

For example, in the embodiment shown in fig. 2 and 3, the first tray body 100 has four openings 101, the four openings 101 are arranged in an equiangular distance manner, and the angular distance between any two adjacent openings 101 is the first angular distance α. The second disk 200 has four radially outermost air holes 201, four radially middle air holes 202 and four radially innermost air holes 203, the four radially outermost air holes 201 are arranged in an equal angular distance, the four radially middle air holes 202 and the four radially innermost air holes 203 are also arranged in the same manner, and the angular distance between any two adjacent air holes 201, any two adjacent air holes 202 and any two adjacent air holes 203 is a second angular distance β which is substantially equal to the first angular distance α of any two adjacent openings 101. It can be appreciated that the angular distance of the openings 101 of the first tray 100 described herein is viewed from the center of the first tray 100, and the angular distance of the air holes of the second tray is viewed from the center C of the second tray 200.

In fig. 2, an opening 101 and a gas shielding portion 102 adjacent thereto can be collectively referred to as a first sector unit, and the first tray body 100 is composed of four first sector units. In fig. 3, a sector R1, a sector R2 and a sector R3 may be collectively referred to as a second sector unit, and the second tray 200 is composed of four second sector units. In some embodiments, the first sector units comprising the first tray 100 and the second sector units comprising the second tray 200 are the same in number and may have substantially equal central angles to facilitate an angular distance of adjacent openings 101 substantially equal to an angular distance of adjacent air holes 201, an angular distance of adjacent air holes 202, and/or an angular distance of adjacent air holes 203.

Since the first tray 100 is composed of four first sector units and the second tray 200 is composed of four second sector units, the central angle between each first sector unit and each second sector unit can be substantially 90 degrees. Since a second sector unit is composed of three sectors R1, R2 and R3, the central angles of the sectors R1, R2 and R3 can be substantially 30 degrees. That is, the central angle of the air holes 201, 202 and 203 may be substantially 30 degrees. In an embodiment where the central angle of the opening 101 is substantially equal to the central angle of the air hole, the central angle of the opening 101 is also substantially 30 degrees. In such an embodiment, the central angle of the gas blocking portion 102 is substantially 60 degrees.

It can be understood that in the embodiment shown in fig. 3, the first tray 100 and the second tray 200 are respectively composed of four first sector units and four second sector units, but in other embodiments, the first tray 100 may be composed of two, three or more than four first sector units, and the second tray 200 may be composed of two, three or more than four second sector units.

FIG. 10 is a flow chart illustrating a method of supplying gas according to some embodiments of the present disclosure. In step S1, the wafer holding stage 10 may be rotated. For example, the wafer holding stage 10 may be rotated at an equal angular velocity by the drive mechanism 20 so that the wafer W can be rotated at an equal angular velocity.

In step S2, the first tray 100 (also referred to as a lower tray) under the second tray 200 (also referred to as an upper tray) is rotated such that the opening 101 of the first tray 100 is moved to a first local area (e.g., the sector R1) to expose the first local area.

In step S3, gas may be provided to the outlet 301 (also referred to as an exhaust port) of the gas supply head 300 above the second tray 200 so that the gas may pass through the gas holes of the first local area of the second tray 200 (e.g., the gas holes 201 of the sector R1) and be exhausted from the opening 101 of the first tray 100 onto the wafer W.

Next, in step S4, the first tray 100 may be rotated continuously such that the opening 101 of the first tray 100 moves to a second partial area (e.g., the sector R2) of the second tray 200 to expose the second partial area, and then the gas providing step of step S3 is performed again such that the gas can pass through the gas hole (e.g., the gas hole 202 of the sector R2) of the second partial area of the second tray 200 and be exhausted from the opening 101 of the first tray 100 onto the wafer W. Then, a similar operation may be continued by rotating the first tray 100 to expose a local area of the second tray 200 having a different distribution of gas holes and providing gas. Thus, different gas distributions can be provided to the wafer W. In some embodiments, the gas supply to the gas supply head 300 may be stopped during the rotation of the first tray 100, so as to avoid unnecessary gas distribution.

In some embodiments, as shown in fig. 1, the gas supply apparatus 50 further comprises a supply head drive mechanism 500. The supply head driving mechanism 500 is connected to the gas supply head 300 to rotate the gas supply head 300. Further, the supply head driving mechanism 500 includes a supply head spindle 510 and an actuator 520. The axial direction of the supply head spindle 510 is parallel to the support spindle 21. One end of the supply head spindle 510 is fixed to the gas supply head 300, and the other end is connected to the actuator 520. The actuator 520 is capable of generating a force to rotate the supply head spindle 510, thereby rotating the gas supply head 300 about the supply head spindle 510. Accordingly, the gas supply head 300 can be rotated to a position directly above the wafer holding stage 10 to supply gas to the wafer W, and the gas supply head 300 can be rotated to a position away from the position directly above the wafer holding stage 10 to expose the wafer W below the metal target M, thereby facilitating deposition of the metal material of the metal target M on the wafer W. Therefore, the metal oxidation process on the wafer W can be performed in-situ after the metal deposition process. In other embodiments, the supply head drive mechanism 500 may move the gas supply head 300 instead of rotating the gas supply head 300. For example, the supply head driving mechanism 500 may be a movable stage, and the gas supply head 300 may be disposed on the movable stage and move along with the translation of the movable stage.

In some embodiments, the gas supply device 50 may further include a gas input tube 511. The gas inlet tube 511 may be located in the supply head spindle 510. One end of the gas inlet pipe 511 is connected to the gas source 600, and the other end of the gas inlet pipe 511 is connected to the outlet 301 of the gas supply head 300. Thus, the gas from the gas source 600 may be delivered to the outlet 301 of the gas supply head 300 via the gas input tube 511.

Fig. 11 illustrates a top view of a first tray 100a according to some embodiments of the present disclosure, and fig. 12 illustrates a top view of a second tray 200a that can be used with the first tray 100a according to some embodiments of the present disclosure. As shown in fig. 11 and 12, an opening 101a and an adjacent gas shielding portion 102a can be collectively referred to as a first sector unit, and the first tray 100a is composed of three first sector units. In addition, a sector R1a, a sector R2a and a sector R3a may be collectively referred to as a second sector unit, and the second tray 200a is composed of three second sector units. The central angles of the first sector unit and the second sector unit are substantially equal.

In some embodiments, the central angle of the middle ring of fan shaped air holes 201a in the fan shaped region R1a, the central angle of the innermost fan shaped air holes 202a in the fan shaped region R2a, and the central angle of the outermost ring of fan shaped air holes 203a in the fan shaped region R3a are substantially equal. In some embodiments, the central angle of the sector-shaped opening 101a of the first disc body 100a is substantially equal to the central angle of the

air holes

201a, 202a and 203 a. Since the first tray 100a is composed of three first sector units and the second tray 200a is composed of three second sector units, the central angle of each first sector unit and each second sector unit can be substantially 120 degrees. Since a second sector unit is composed of three sectors R1a, R2a and R3a, the central angles of the sectors R1a, R2a and R3a can be substantially 40 degrees. That is, the central angle of the

air holes

201a, 202a and 203a may be substantially 40 degrees. In the embodiment where the central angle of the opening 101a is substantially equal to the central angle of the air hole, the central angle of the opening 101a is also substantially 40 degrees. In such an embodiment, the central angle of the gas shielding portion 102a is substantially 80 degrees.

Fig. 13 illustrates a top view of a first tray 100b according to some embodiments of the present disclosure, and fig. 14 illustrates a top view of a second tray 200b that can be used with the first tray 100b according to some embodiments of the present disclosure. As shown in fig. 13 and 14, an opening 101b and an adjacent gas shielding portion 102b can be collectively referred to as a first sector unit, and the first tray 100b is composed of two first sector units. In addition, a sector R1b, a sector R2b and a sector R3b may be collectively referred to as a second sector unit, and the second tray 200b is composed of two second sector units. The central angles of the first sector unit and the second sector unit are substantially equal.

In some embodiments, the central angle of the middle ring of fan shaped air holes 201b in the fan shaped region R1b, the central angle of the innermost fan shaped air holes 202b in the fan shaped region R2b, and the central angle of the outermost ring of fan shaped air holes 203b in the fan shaped region R3b are substantially equal. In some embodiments, the central angle of the sector-shaped opening 101b of the first disc body 100b is substantially equal to the central angle of the

air holes

201b, 202b and 203 b. Since the first tray 100b is composed of two first sector units and the second tray 200b is composed of two second sector units, the central angle of each first sector unit and each second sector unit can be substantially 180 degrees. Since a second sector unit is composed of three sectors R1b, R2b and R3b, the central angles of the sectors R1b, R2b and R3b can be substantially 60 degrees. That is, the central angle of the

air holes

201b, 202b and 203b may be substantially 60 degrees. In the embodiment where the central angle of the opening 101b is substantially equal to the central angle of the air hole, the central angle of the opening 101b is also substantially 60 degrees. In such an embodiment, the central angle of the gas blocking portion 102b is substantially 120 degrees.

FIG. 15 illustrates a top view of the second tray 200c according to some embodiments of the present disclosure. As shown in fig. 15, the sector R1c may further include a plurality of auxiliary air holes 207, and the auxiliary air holes 207 are distributed at positions other than the air holes 201 c. For example, the auxiliary air holes 207 are distributed between the air holes 201C and the center C of the second plate 200C. Therefore, when the fan-shaped region R1c supplies gas to the wafer, the region below the auxiliary gas hole 207 may receive gas in addition to the region below the gas hole 201 c. In some embodiments, the size of these auxiliary air holes 207 is different from the size of the air holes 201c of the sector R1 c. Further, the size (e.g., pore diameter) of the auxiliary air holes 207 is smaller than the size (e.g., pore diameter) of the air holes 201 c. Therefore, the exhaust flux of the gas hole 201c may be higher than that of the auxiliary gas hole 207, so that when the sector R1c provides gas to the wafer, the gas flux received by the region below the gas hole 201c is higher than that received by the region below the auxiliary gas hole 207, thereby concentratedly providing gas to a specific region (e.g., the outermost ring region) of the wafer.

Similar to the sector R1c, the sector R2c may also include auxiliary air holes 208 that are smaller in size than the air holes 202 c. These auxiliary air holes 208 are distributed at positions other than the air holes 202 c. For example, the gas holes 202c may be distributed among a plurality of auxiliary gas holes 208. Similarly, the sector R3c may also include auxiliary air holes 209 that are smaller in size than the air holes 203 c. These auxiliary air holes 209 are distributed at positions other than the air holes 203 c. For example, the air holes 203 are distributed between the auxiliary air holes 209 and the center C of the second plate 200C.

FIG. 16 illustrates a top view of the second tray 200d according to some embodiments of the present disclosure. As shown in fig. 16, the arrangement density of these auxiliary air holes 207 is different from the arrangement density of the air holes 201d of the fan-shaped region R1 d. Further, the arrangement density of the auxiliary air holes 207 is lower than that of the air holes 201 d. Therefore, the gas holes 201d can be arranged more densely than the auxiliary gas holes 207, so that the gas discharge flux in the region of the gas holes 201d can be higher than that in the region of the auxiliary gas holes 207, so that when the fan-shaped region R1d supplies gas to the wafer, the gas flux received by the region below the gas holes 201d is higher than that received by the region below the auxiliary gas holes 207, thereby intensively supplying gas to a specific region (for example, the outermost ring-shaped region) of the wafer. Similar to the sector R1d, the sector R2d may also include air holes 202d arranged more densely than the auxiliary air holes 208, and the sector R3d may also include air holes 203d arranged more densely than the auxiliary air holes 209.

According to some embodiments of the present disclosure, since the distribution of the gas holes in different sectors of the second plate is different, and since the first plate and the second plate are relatively rotatable, the gas supply device can provide different gas distributions when the first plate is exposed to different sectors, so as to provide a more flexible gas supply process.

In some embodiments, each of the sectors has a plurality of air holes, and the distances from the air holes of adjacent sectors to the center of the second tray are different.

In some embodiments, a central angle defined by two opposite sidewalls of at least one of the air holes is substantially equal to a central angle defined by two opposite sidewalls of the opening.

In some embodiments, the fan-shaped areas respectively have a plurality of auxiliary air holes, and the size, arrangement density, or combination of the auxiliary air holes and the air holes are different.

In some embodiments, the number of the at least one opening is plural, adjacent openings are separated by a first angular distance, two of the air holes are separated by a second angular distance, the first angular distance and the second angular distance are substantially equal, and the two air holes separated by the second angular distance are substantially equal to the center of the second tray.

In some embodiments, the opening of the first tray is fan-shaped.

In some embodiments, at least one of the gas shields is fan-shaped.

In some embodiments, the gas supply is stopped while the lower disk is rotating.

The foregoing has outlined features of various embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims

1. A gas supply apparatus, comprising:

a gas supply head;

a first tray having at least one opening;

a second plate having a plurality of sectors arranged along an angular direction of the second plate, the sectors having different distributions of gas holes, the opening of the first plate overlapping a projection of one of the sectors of the second plate on the gas supply head; and

and the rotary actuator is used for driving the first disc, the second disc or the combination thereof to enable the first disc and the second disc to relatively rotate in the angular direction.

2. The gas supply apparatus of claim 1, wherein each of the sectors has a plurality of gas holes, and the gas holes of adjacent sectors are spaced apart from a center of the second plate.

3. The gas supply apparatus according to claim 2, wherein a central angle defined by two opposite sidewalls of at least one of the plurality of gas holes is substantially equal to a central angle defined by two opposite sidewalls of the opening.

4. The gas supply apparatus according to claim 2, wherein the fan-shaped regions respectively have a plurality of auxiliary gas holes, and the size, arrangement density, or combination thereof of the auxiliary gas holes is different from that of the gas holes.

5. The gas supply apparatus of claim 2, wherein the at least one opening is plural in number, adjacent openings are separated by a first angular distance, two of the gas holes are separated by a second angular distance, the first angular distance and the second angular distance are substantially equal, and the gas holes separated by the second angular distance are substantially equal in distance to the center of the second plate.

6. The gas supply apparatus according to any one of claims 1 to 5, wherein the opening is fan-shaped.

7. A gas supply apparatus, comprising:

a gas supply head;

the first disc body comprises a plurality of gas shielding parts which are arranged along the angular direction of the first disc body and define an opening between the gas shielding parts;

a second plate body which comprises a plurality of local areas, wherein the gas holes in the local areas are distributed differently, one of the local areas is overlapped with the projection of the opening on the gas supply head, and the other of the local areas is overlapped with the projection of one of the gas shielding parts on the gas supply head; and

8. The gas supply apparatus according to claim 7, wherein at least one of the gas shields is fan-shaped.

9. A method of supplying a gas, comprising:

providing gas to the upper plate from a gas outlet of a gas supply head located above an upper plate, wherein the upper plate comprises a first sector and a second sector arranged along an angular direction of the upper plate and having different gas hole distributions;

rotating a lower plate located below the upper plate such that an opening of the lower plate moves to a first sector of the upper plate, wherein a projection of the opening of the lower plate and the first sector of the upper plate on the gas supply head overlaps; and

rotating the lower disk such that the opening of the lower disk moves to a second sector of the upper disk, wherein the opening of the lower disk and a projection of the second sector of the upper disk on the gas supply head overlap.

10. The method of claim 9, wherein the gas supply is stopped while the lower plate is rotating.