CN108377136A - Millimeter wave power amplifier circuit - Google Patents
Millimeter wave power amplifier circuit Download PDFInfo
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- CN108377136A CN108377136A CN201711441664.1A CN201711441664A CN108377136A CN 108377136 A CN108377136 A CN 108377136A CN 201711441664 A CN201711441664 A CN 201711441664A CN 108377136 A CN108377136 A CN 108377136A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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Abstract
The invention discloses a millimeter wave power amplifier circuit, which comprises: and the interstage power division matching unit is used for dividing at least one amplified output power respectively to obtain a plurality of output signals and outputting the plurality of output signals to a next stage of power amplification structure, wherein the interstage power division matching unit comprises a microstrip line, and a slot line is formed on the microstrip line. According to the technical scheme provided by the invention, the slot line is formed on the microstrip line of the interstage power division matching unit, the slow wave effect is utilized, the length of the microstrip line can be greatly reduced compared with the existing microstrip line under the same frequency, the loss of the microstrip line is reduced while the wafer processing cost is reduced, the current size can be further reduced, and the parasitic effect caused by bending the microstrip line is avoided.
Description
Technical field
The present invention relates to millimetre-wave attenuator technical fields, more specifically, are related to a kind of millimeter-wave power amplifiers electricity
Road.
Background technology
In recent years, as microwave low-frequency spectra resource gradually exhausts, millimeter wave resource is all more next in dual-use field
More paid attention to by researcher.Millimeter-wave power amplifiers are primarily served as the key component in millimeter-wave communication system
The effect of lifting system output power, and the raising of output power then means stronger anti-interference ability, more preferably communicates matter
Amount and farther operating radius.Monolithic millimeter-wave power amplifiers are aobvious because of its high stability, miniaturization, low cost, low-power consumption etc.
Advantage is write, this advantage is especially minimized and plays a great role in the fields such as satellite communication system, radar and aviation.
And for monolithic millimeter-wave power amplifiers inside, millimeter wave frequency band transmission line loss will substantially reduce power
Fan-out capability needs multiple tube cores carrying out power combing, but the disadvantage is that power synthesis circuit to improve monolithic output power
Can be very big, wafer processing cost is increased, while excessive combiner circuit can lead to big loss in millimeter wave frequency band.Research
Personnel's generally use bends the mode of transmission line to reduce the area of chip, but bending can be brought greatly while reducing area
Ghost effect, very big error can be introduced in millimeter wave frequency band, therefore how to reduce by the circuit design more innovated
The size of circuit becomes current urgent problem to be solved.
Invention content
In view of this, the present invention provides a kind of millimeter-wave power amplifiers circuit, by between grade work(divide matching unit
Microstrip line on form the line of rabbet joint, using its Slow-wave effect, its length can be greatly reduced than existing microstrip line under identical frequency,
Reduce the loss of microstrip line while reducing wafer processing cost, and then electric current size can be reduced, and avoids to microstrip line
Bent and caused the appearance of ghost effect.
To achieve the above object, technical solution provided by the invention is as follows：
A kind of millimeter-wave power amplifiers circuit, the millimeter-wave power amplifiers circuit include：
For obtaining multipath output signals after at least output power is divided respectively all the way and will be more by amplified
Road output signal, which is exported to work(between the grade of next stage power amplification structure, divides matching unit, wherein work(point matching is single between the grade
Member includes microstrip line, and is formed with the line of rabbet joint on the microstrip line.
Optionally, the millimeter-wave power amplifiers circuit is multistage millimeter-wave power amplifiers circuit.
Optionally, the millimeter-wave power amplifiers circuit is two-stage millimeter-wave power amplifiers circuit, wherein the milli
Metric wave power amplifier circuit includes：Input terminal, input matching unit, input work divide matching unit, power drive grade unit, grade
Between between matching unit, the grade work(divide matching unit, power-amplifier stage unit, output work close matching unit, output matching unit
And output end；
The input terminal is for receiving input signal；
The input matching unit is used for the input impedance to the input signal and default impedance matching transition；
After the input work is divided to two parts of the power divider of signal of the matching unit for exporting the input matching unit
Two-way output signal is obtained, and realizes that the impedance between the input matching unit and the power drive grade unit converts；
The respective corresponding work(of two paths of signals that the power drive grade unit is used to divide matching unit to export the input work
Rate exports after being amplified respectively；
The interstage matched unit divides for realizing work(between the power drive grade unit and the grade between matching unit
Impedance transformation；
Work(divides two paths of signals respective work(of the matching unit for exporting the interstage matched unit between the grade
Rate obtains multipath output signals and exports multipath output signals to the power-amplifier stage unit after being divided into more parts, be additionally operable to
Realize the impedance transformation between the power-amplifier stage unit and the interstage matched unit；
The multiple signals that the power-amplifier stage unit is used to divide matching unit to export work(between the grade it is respective corresponding
Power be amplified respectively after export；
It is respective that the output work closes the multiple signals that matching unit is used to export the power-amplifier stage unit
Output signal all the way is obtained after power combing, and realizes the resistance between the power-amplifier stage unit and the output matching unit
Resistance changes；
The output matching unit closes output impedance and the institute of the output signal of matching unit for realizing the output work
State default impedance matching transition；
And the output end is used to export the output signal of the output matching unit.
Optionally, the input terminal and the output end are GSG fabric ports.
Optionally, the power drive grade unit includes the first sub- power drive grade unit and the second sub- power drive grade list
Member；
The input work be divided to matching unit by it is described input matching unit output signal power divider be identical two parts
After obtain two-way output signal and exported respectively to the described first sub- power drive grade unit and the second sub- power drive grade
Unit；
And the letter that the first sub- power drive grade unit and the second sub- power drive grade unit will be accessed respectively
It is exported after number identical multiple of power amplification.
Optionally, the interstage matched unit includes the first sub- interstage matched unit and the second sub- interstage matched unit；
The first sub- interstage matched unit is connected with the described first sub- power drive grade unit, for realizing described first
Work(divides the impedance between matching unit to convert between power drive grade unit and the grade；
And the second sub- interstage matched unit is connected with the described second sub- power drive grade unit, for realizing institute
The impedance that work(between the second power drive grade unit and the grade divides between matching unit is stated to convert.
Optionally, work(divides matching unit to divide work(point between matching unit and the second sub- grade including work(between the first sub- grade between the grade
Matching unit；
Work(divides work(between matching unit and the second sub- grade to divide matching unit including a plurality of described between the first sub- grade
Microstrip line, and the line of rabbet joint is formed on each microstrip line, each microstrip line be connected with a capacitance and one with it is described
The TSV dorsal pores of capacitance series；
Wherein, between the described first sub- grade work(divide matching unit microstrip line and the described first sub- interstage matched unit output
End is connected, and work(divides the output end phase of the microstrip line and the described second sub- interstage matched unit of matching unit between the second sub- grade
Even.
Optionally, work(divides matching unit by between the described first sub- interstage matched unit and the second sub- grade between the grade
The respective power of signal with unit output, which is divided into after more parts, obtains the power of multipath output signals and multipath output signals
It is identical.
Optionally, work(divides matching unit by between the described first sub- interstage matched unit and the second sub- grade between the grade
The respective power of signal with unit output is divided into two parts.
Optionally, the default impedance is 50 ohmages.
Compared to the prior art, technical solution provided by the invention has at least the following advantages：
The present invention provides a kind of millimeter-wave power amplifiers circuit, the millimeter-wave power amplifiers circuit includes：With
In obtaining multipath output signals after at least output power is divided respectively all the way and by multipath output signals by amplified
Output to work(between the grade of next stage power amplification structure divides matching unit, wherein work(divides matching unit to include micro- between the grade
Band line, and it is formed with the line of rabbet joint on the microstrip line.As shown in the above, technical solution provided by the invention, by between grade
Work(, which divides, forms the line of rabbet joint on the microstrip line of matching unit, can be big than existing microstrip line under identical frequency using its Slow-wave effect
Reduce its length greatly, reduce the loss of microstrip line while reducing wafer processing cost, and then electric current size can be reduced, and
Avoid that microstrip line is bent and caused the appearance of ghost effect.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of microstrip line provided by the embodiments of the present application；
Fig. 2 is a kind of structural schematic diagram of millimeter-wave power amplifiers circuit provided by the embodiments of the present application；
Fig. 3 is the structural schematic diagram of another millimeter-wave power amplifiers circuit provided by the embodiments of the present application；
Fig. 4 is a kind of domain of millimeter-wave power amplifiers circuit provided by the embodiments of the present application.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As described in background, for monolithic millimeter-wave power amplifiers inside, millimeter wave frequency band transmits line loss
Consumption will substantially reduce power output capacity, in order to improve monolithic output power, need multiple tube cores carrying out power combing, but lack
Point is that power synthesis circuit can be very big, increases wafer processing cost, while excessive combiner circuit is in millimeter wave frequency band meeting
Lead to big loss.Researcher's generally use bends the mode of transmission line to reduce the area of chip, but bending is reducing
Big ghost effect can be brought while area, can introduce very big error in millimeter wave frequency band, therefore how by more creating
New circuit design becomes current urgent problem to be solved to reduce the size of circuit.
Based on this, the embodiment of the present application provides a kind of millimeter-wave power amplifiers circuit, passes through the work(point matching between grade
The line of rabbet joint is formed on the microstrip line of unit, using its Slow-wave effect, it can be greatly reduced than existing microstrip line under identical frequency
Length, reduces the loss of microstrip line while reducing wafer processing cost, and then can reduce electric current size, and avoids to micro-
The appearance of ghost effect is bent and caused with line.To achieve the above object, technical solution provided by the embodiments of the present application is such as
Under, specifically technical solution provided by the embodiments of the present application is described in detail in conjunction with Fig. 1 to Fig. 3.
Refering to what is shown in Fig. 1, being a kind of structural schematic diagram of microstrip line provided by the embodiments of the present application, wherein the application is real
It applies example and provides a kind of millimeter-wave power amplifiers circuit, the millimeter-wave power amplifiers circuit includes：
For obtaining multipath output signals after at least output power is divided respectively all the way and will be more by amplified
Road output signal, which is exported to work(between the grade of next stage power amplification structure, divides matching unit, wherein work(point matching is single between the grade
Member includes microstrip line 10, and the line of rabbet joint 11 is formed on the microstrip line 10.
It should be noted that the embodiment of the present application for multiple microstrip lines and upper level structure output end connection type not
Concrete restriction is done, multiple microstrip lines can be connected by a bus with upper level structure output end, such as two neighboring micro-strip in Fig. 1
Line 10 is connected to upper structure output end by a bus, and microstrip line 10 has been respectively formed on the line of rabbet joint 11, to form Slow-wave effect；
In addition, multiple microstrip lines can also be directly connected directly with upper level structure output end, to this needs according to practical application into
Row design.
In addition, the millimeter-wave power amplifiers circuit provided by the embodiments of the present application is multistage millimeter-wave power amplifiers
Circuit, the application are not limited its specific series, need specifically to be designed according to practical application.
As shown in the above, technical solution provided by the embodiments of the present application, by between grade work(divide the micro- of matching unit
The line of rabbet joint is formed on band line, using its Slow-wave effect, its length can be greatly reduced than existing microstrip line under identical frequency, is being dropped
Reduce the loss of microstrip line while low wafer processing cost, and then electric current size can be reduced, and avoids carrying out microstrip line
Bend and cause the appearance of ghost effect.
It is detailed to a kind of two-stage millimeter-wave power amplifiers circuit progress provided by the embodiments of the present application below in conjunction with the accompanying drawings
Description.
Refering to what is shown in Fig. 2, be a kind of structural schematic diagram of millimeter-wave power amplifiers circuit provided by the embodiments of the present application,
Wherein, the millimeter-wave power amplifiers circuit is two-stage millimeter-wave power amplifiers circuit, wherein the millimeter wave power is put
Big device circuit includes：
Input terminal 110, input matching unit 200, input work are divided between matching unit 300, power drive grade unit 400, grade
Work(divides matching unit 600, power-amplifier stage unit 700, output work to close matching unit 800, defeated between matching unit 500, the grade
Go out matching unit 900 and output end 120；
The input terminal 110 is for receiving input signal；
The input matching unit 200 is used for the input impedance to the input signal and default impedance matching transition；
The input work divides the power divider of signal of the matching unit 300 for exporting the input matching unit 200
Two-way output signal is obtained after two parts, and is realized between the input matching unit 200 and the power drive grade unit 400
Impedance converts；
The two paths of signals that the power drive grade unit 400 is used to divide matching unit 300 to export the input work is respectively
Corresponding power exports after being amplified respectively；
The interstage matched unit 500 matches for realizing the power drive grade unit 400 with work(between the grade point single
Impedance transformation between member 600；
Work(divides two paths of signals of the matching unit 600 for exporting the interstage matched unit 500 respectively phase between the grade
The power answered obtains multipath output signals and exports multipath output signals to the power-amplifier stage unit after being divided into more parts
700, it is additionally operable to realize the impedance transformation between the power-amplifier stage unit 700 and the interstage matched unit 500；
The power-amplifier stage unit 700 is used to divide work(between the grade to each of multiple signals that matching unit 600 exports
It is exported after being amplified respectively from corresponding power；
The output work closes multiple signals of the matching unit 800 for exporting the power-amplifier stage unit 700 respectively
Output signal all the way is obtained after corresponding power combing, and it is single to realize that the power-amplifier stage unit 700 is matched with the output
Impedance transformation between member 900；
The output matching unit 900 closes the output resistance of the output signal of matching unit 800 for realizing the output work
The anti-and default impedance matching transition；
And the output end 120 is used to export the output signal of the output matching unit 900.
Work(divides matching unit to include connection interstage matched unit and power-amplifier stage between grade provided by the embodiments of the present application
The microstrip line of unit, wherein the line of rabbet joint is formed on microstrip line.By between grade work(divide and form slot on the microstrip line of matching unit
Line can greatly reduce its length under identical frequency using its Slow-wave effect than existing microstrip line, be processed into reducing wafer
This while, reduces the loss of microstrip line, and then can reduce electric current size, and avoids bending microstrip line and causing to post
Come into force the appearance answered.
In conjunction with Fig. 3 to the structure of more specifically two-stage millimeter-wave power amplifiers circuit provided by the embodiments of the present application into
Row explanation.
Refering to what is shown in Fig. 3, for the structural representation of another millimeter-wave power amplifiers circuit provided by the embodiments of the present application
Figure, wherein
In one embodiment of the application, input terminal 110 provided by the embodiments of the present application is used to receive input signal, and,
Output end 120 provided by the embodiments of the present application is used to export the output signal output of matching unit 900.Wherein, the application is real
The input terminal 110 and the output end 120 for applying example offer all can be GSG (ground-signal-ground) structures ends
Mouthful, that is, input terminal 110 and output end 120 are made of 3 pin PAD and 2 TSV dorsal pores, 2 TSV dorsal pores respectively with outside
Two pin PAD are connected, to carry out ground connection setting.
Wherein, GSG fabric ports are set to by the way that the port organization of input terminal and output end to be all provided with, are conducive to survey in piece
Examination, i.e., the pin PAD that port organization is directly contacted by probe can be tested, and testing efficiency is improved.
In one embodiment of the application, power drive grade unit provided by the embodiments of the present application is used for input work point matching
Respectively corresponding power is amplified the two paths of signals of unit output；That is, power drive grade unit is used for the power amplification for rear class
Unit provides gain and input power.Refering to what is shown in Fig. 3, the power drive grade unit provided by the embodiments of the present application includes：
First sub- power drive grade unit, 410 and second sub- power drive grade unit 420；
The power divider of signal that the input work divides matching unit 300 to export the input matching unit 200 is phase
Two-way output signal is obtained after two parts same and is exported respectively to the described first sub- power drive grade unit 410 and second son
Power drive grade unit 420；
And the first sub- power drive grade unit 410 and the second sub- power drive grade unit 420 will respectively connect
The signal power entered exports after amplifying identical multiple.
By inputting matching unit and input work between input terminal provided by the embodiments of the present application and power drive grade unit
Matching unit is divided to be sequentially connected, that is, between input terminal and the first sub- power drive grade unit and the second sub- power drive grade unit
It is additionally provided with input matching unit and input work divides matching unit.It inputs matching unit and realizes millimeter-wave power amplifiers circuit
The matching transition of the input impedance and default ohmage of input terminal access；Input work divides matching unit and the first sub- power drive
Grade unit and the second sub- power drive grade unit are connected, and the power of the input signal after impedance matching is divided into two equal two
Part after be transferred to the first sub- power drive grade unit and the second sub- power drive grade unit respectively, and realize input matching unit with
Impedance transformation between first sub- power drive grade unit and the second sub- power drive grade unit.
And preferred, the first sub- power drive grade unit and the second sub- power drive grade unit provided by the embodiments of the present application
Structure it is identical, so by being exported after the identical multiple of the power amplification for the signal being respectively connected to.Wherein, the first sub- power drive grade
Unit and the second sub- power drive grade unit are made of high-gain, high efficiency tube core, and the first sub- power drive grade unit and
Second sub- power drive grade unit includes stabilizing network and biasing supply network.
Wherein, it is real that GaAs pHEMT techniques may be used in millimeter-wave power amplifiers circuit provided by the embodiments of the present application
It is existing, and, the height that the first sub- power drive grade unit and the second sub- power drive grade unit provided by the embodiments of the present application include
Gain, high efficiency tube core all can be GaAs pHEMT tube cores, and die area can be 1600um2。
In one embodiment of the application, the interstage matched unit provided by the embodiments of the present application is for realizing power drive
Work(divides the impedance between matching unit to convert between grade unit and grade, i.e., for realizing the first sub- power drive grade unit and the second son
The work(between grade divides the impedance between matching unit to convert to power drive grade unit respectively.Refering to what is shown in Fig. 3, the embodiment of the present application carries
The interstage matched unit of confession includes：
First sub- interstage matched unit, 510 and second sub- interstage matched unit 520；
The first sub- interstage matched unit 510 is connected with the described first sub- power drive grade unit 410, for realizing institute
The impedance that work(divides between matching unit 600 between the first power drive grade unit 410 and the grade is stated to convert；
And the second sub- interstage matched unit 520 is connected with the described second sub- power drive grade unit 420, is used for
Realize that the impedance that work(divides between matching unit 520 between the second power drive grade unit 420 and the grade converts.
In one embodiment of the application, work(divides two-way of the matching unit for that will export between grade provided by the embodiments of the present application
Signal respectively exports after corresponding power is divided into more parts, that is, work(divides matching unit for the first sub- interstage matched unit is defeated between grade
The signal gone out exports after being divided into more parts, and work(divides matching unit while the letter for exporting the second sub- interstage matched unit between grade
It is exported after number being divided into more parts.Refering to what is shown in Fig. 3, work(divides the matching unit to include between the grade provided by the embodiments of the present application：
Work(divides work(between matching unit 610 and the second sub- grade to divide matching unit 620 between first sub- grade；
Work(divides work(between matching unit 610 and the second sub- grade to divide matching unit 620 including more between the first sub- grade
Microstrip line 10 described in item, and the line of rabbet joint 11 is formed on each microstrip line 10, each microstrip line 10 is connected with one
The TSV dorsal pores 13 that capacitance 12 and one is concatenated with the capacitance 12；
Wherein, work(divides the microstrip line of matching unit 610 and the described first sub- interstage matched unit 510 between the described first sub- grade
Output end be connected, work(divides the microstrip line of matching unit 620 and the described second sub- interstage matched unit 520 between the second sub- grade
Output end be connected.
Pass through interstage matched unit between power drive grade unit and power-amplifier stage unit provided by the embodiments of the present application
Work(divides matching unit to be sequentially connected and connects between grade.Wherein, interstage matched unit realize power drive grade unit output impedance with
Work(divides the impedance between matching unit to convert between grade, i.e., the first sub- interstage matched unit and the first sub- power drive grade unit phase
Even and the first sub- interstage matched unit divides matching unit to be connected with work(between the first sub- grade, so that the first sub- interstage matched unit
Realize that the impedance that work(divides between matching unit between the output impedance and the first sub- grade of the first sub- power drive grade unit converts, with
And second sub- interstage matched unit be connected with the second sub- power drive grade unit and the second sub- interstage matched unit and second son
Work(divides matching unit to be connected between grade, so that the second sub- interstage matched unit realizes the output resistance of the second sub- power drive grade unit
The anti-work(between the second sub- grade divides the impedance between matching unit to convert.
Work(divides matching unit by the described first sub- interstage matched unit and described between the grade provided by the embodiments of the present application
The respective power of signal of second sub- interstage matched unit output obtains multipath output signals after being divided into more parts and multichannel is defeated
The power for going out signal is identical.That is, work(divides matching unit by the work(of the signal of the first sub- interstage matched unit output between the first sub- grade
Rate exports after being divided into more parts, and work(divides matching unit by the power point of the signal of the second sub- interstage matched unit output between the second sub- grade
At being exported after more parts, and work(divides work(between the matching unit multiple signals exported and the second sub- grade to divide matching unit defeated between the first sub- grade
The power all same of the multiple signals gone out.
Optionally, work(divides matching unit by between the described first sub- interstage matched unit and the second sub- grade between the grade
The respective power of signal with unit output is divided into two parts.That is, work(divides between matching unit and the second sub- grade between the first sub- grade
It includes 2 microstrip lines that work(, which divides matching unit, and the line of rabbet joint is formed on each microstrip line, and an electricity is connected on each microstrip line
Appearance and the TSV dorsal pores with capacitance series.Wherein, the length of microstrip line provided by the embodiments of the present application can be 410um, on it
The length of the line of rabbet joint can be 350um, the capacitance of capacitance can be 0.7pF, and entire grade power amplifier circuit work
At 21GHz, since work(divides and forms the line of rabbet joint on the microstrip line of matching unit between grade, thus its Slow-wave effect is utilized, in phase
It can reduce the nearly length of 100um than being not added with the microstrip line of slot line structure under same frequency, reduce the same of wafer processing cost
When, the loss of microstrip line can be reduced.It is a kind of millimeter-wave power amplifiers provided by the embodiments of the present application in conjunction with shown in Fig. 4
The domain of circuit, wherein work(between grade is divided on the microstrip line of matching unit 1000 and form the line of rabbet joint, can effectively reduce its domain face
Product reduces wafer processing cost.
Work(divides matching unit by the signal of the first sub- interstage matched unit and the second sub- interstage matched unit output between grade
When respective power is divided into two parts output, power-amplifier stage unit provided by the embodiments of the present application may include four sub- work(
Rate amplifying stage unit.Shown in Fig. 3, power-amplifier stage unit provided by the embodiments of the present application may include four sub- work(
Rate amplifying stage unit is respectively the first sub- power-amplifier stage unit 710, the second sub- power-amplifier stage unit 720, the sub- power of third
Amplifying stage unit 730 and the 4th sub- power-amplifier stage unit 740, wherein 710 and second sub- work(of the first sub- power-amplifier stage unit
Work(divides matching unit 610 to be connected to rate amplifying stage unit 720 between the first sub- grade, and, sub- 730 He of power-amplifier stage unit of third
Work(divides matching unit 620 to be connected to 4th sub- power-amplifier stage unit 740 between the second sub- grade.
Wherein, the provided by the embodiments of the present application first sub- power-amplifier stage unit 710, the second sub- power-amplifier stage unit
720, the structure all same of sub- 730 and the 4th sub- power-amplifier stage unit 740 of power-amplifier stage unit of third, so that first
Sub- 730 and the 4th sub- work(of power-amplifier stage unit of sub- power-amplifier stage unit 710, the second sub- power-amplifier stage unit 720, third
Rate amplifying stage unit 740 will export after the identical multiple of the power amplification of the signal respectively accessed；And the embodiment of the present application provides
The first sub- power-amplifier stage unit 710, the second sub- power-amplifier stage unit 720, the sub- power-amplifier stage unit 730 of third and
Four sub- power-amplifier stage units 740 are made of high-power GaAs pHEMT tube cores, and die area can be 4800um2, and
Every sub- power-amplifier stage unit all includes stabilizing network and biasing supply network.
In conjunction with shown in Fig. 3, in the first sub- power-amplifier stage unit 710, the second sub- power-amplifier stage unit 720, third
Power-amplifier stage unit 730 and the 4th sub- power-amplifier stage unit 740 after the power amplification of induction signal by respectively to exporting, then
Matching unit 800 is closed by the first sub- power-amplifier stage unit 710, the second sub- power-amplifier stage unit 720, third by output work
The output power four-in-one of power-amplifier stage unit 730 and the 4th sub- power-amplifier stage unit 740 is entire power amplifier electricity
The output power on road, and the impedance realized power-amplifier stage unit and exported between matching unit 900 converts.Then by output
After realizing that output work closes the output impedance of matching unit 800 and the matching transition of default impedance with unit 900, by output end 120
Output.In one embodiment of the application, the default impedance provided by the present application is 50 ohmages.
The embodiment of the present application provides a kind of millimeter-wave power amplifiers circuit, the millimeter-wave power amplifiers circuit packet
It includes：For by it is amplified obtain after at least output power is divided respectively all the way multipath output signals and by multichannel it is defeated
Go out signal and export to work(between the grade of next stage power amplification structure to divide matching unit, wherein work(divides matching unit packet between the grade
Microstrip line has been included, and the line of rabbet joint is formed on the microstrip line.As shown in the above, technical side provided by the embodiments of the present application
Case, by between grade work(divide and form the line of rabbet joint on the microstrip line of matching unit, using its Slow-wave effect, than existing under identical frequency
Microstrip line can greatly reduce its length, reduce the loss of microstrip line while reducing wafer processing cost, and then can subtract
Low current size, and avoid that microstrip line is bent and caused the appearance of ghost effect.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (10)
1. a kind of millimeter-wave power amplifiers circuit, which is characterized in that the millimeter-wave power amplifiers circuit includes：
For by it is amplified obtain after at least output power is divided respectively all the way multipath output signals and by multichannel it is defeated
Go out signal and export to work(between the grade of next stage power amplification structure to divide matching unit, wherein work(divides matching unit packet between the grade
Microstrip line has been included, and the line of rabbet joint is formed on the microstrip line.
2. millimeter-wave power amplifiers circuit according to claim 1, which is characterized in that the millimeter-wave power amplifiers
Circuit is multistage millimeter-wave power amplifiers circuit.
3. millimeter-wave power amplifiers circuit according to claim 2, which is characterized in that the millimeter-wave power amplifiers
Circuit is two-stage millimeter-wave power amplifiers circuit, wherein the millimeter-wave power amplifiers circuit includes：Input terminal, input
Matching unit, input work divide work(between matching unit, power drive grade unit, interstage matched unit, the grade to divide matching unit, work(
Rate amplifying stage unit, output work close matching unit, output matching unit and output end；
The input terminal is for receiving input signal；
The input matching unit is used for the input impedance to the input signal and default impedance matching transition；
The input work is divided to matching unit for will be obtained after two parts of the power divider of the signal of the input matching unit output
Two-way output signal, and realize that the impedance between the input matching unit and the power drive grade unit converts；
For the input work to be divided to the two paths of signals of matching unit output, respectively corresponding power divides the power drive grade unit
It is exported after not being amplified；
The interstage matched unit divides the resistance between matching unit for realizing work(between the power drive grade unit and the grade
Resistance changes；
Work(divides the matching unit respective power of two paths of signals for exporting the interstage matched unit point between the grade
At obtaining multipath output signals after more parts and export multipath output signals to the power-amplifier stage unit, it is additionally operable to realize
Impedance transformation between the power-amplifier stage unit and the interstage matched unit；
The respective work(for the multiple signals that the power-amplifier stage unit is used to divide matching unit to export work(between the grade
Rate exports after being amplified respectively；
The output work closes the respective power of multiple signals that matching unit is used to export the power-amplifier stage unit
Output signal all the way is obtained after synthesis, and realizes that the impedance between the power-amplifier stage unit and the output matching unit becomes
It changes；
It is described output matching unit for realizing the output work close matching unit output signal output impedance with it is described pre-
The anti-matching transition of handicapping；
And the output end is used to export the output signal of the output matching unit.
4. millimeter-wave power amplifiers circuit according to claim 3, which is characterized in that the input terminal and the output
End is GSG fabric ports.
5. millimeter-wave power amplifiers circuit according to claim 3, which is characterized in that the power drive grade unit packet
Include the first sub- power drive grade unit and the second sub- power drive grade unit；
The input work be divided to matching unit by it is described input matching unit output signal power divider be identical two parts after
It exports to two-way output signal and respectively to the described first sub- power drive grade unit and the second sub- power drive grade list
Member；
And the signal work(that the first sub- power drive grade unit and the second sub- power drive grade unit will be accessed respectively
Rate exports after amplifying identical multiple.
6. millimeter-wave power amplifiers circuit according to claim 5, which is characterized in that the interstage matched unit includes
First sub- interstage matched unit and the second sub- interstage matched unit；
The first sub- interstage matched unit is connected with the described first sub- power drive grade unit, for realizing first power
Work(divides the impedance between matching unit to convert between driving stage unit and the grade；
And the second sub- interstage matched unit is connected with the described second sub- power drive grade unit, for realizing described
Work(divides the impedance between matching unit to convert between two power drive grade units and the grade.
7. millimeter-wave power amplifiers circuit according to claim 6, which is characterized in that work(divides matching unit between the grade
Work(between matching unit and the second sub- grade is divided to divide matching unit including work(between the first sub- grade；
Work(divides work(between matching unit and the second sub- grade to divide matching unit including a plurality of micro-strip between the first sub- grade
Line, and the line of rabbet joint is formed on each microstrip line, each microstrip line be connected with a capacitance and one with the capacitance
The TSV dorsal pores of concatenation；
Wherein, between the described first sub- grade work(divide matching unit microstrip line and the described first sub- interstage matched unit output end phase
Even, work(divides the microstrip line of matching unit to be connected with the output end of the described second sub- interstage matched unit between the second sub- grade.
8. millimeter-wave power amplifiers circuit according to claim 6, which is characterized in that work(divides matching unit between the grade
The respective power of signal of described first sub- interstage matched unit and the second sub- interstage matched unit output is divided into
The power that multipath output signals and multipath output signals are obtained after more parts is identical.
9. millimeter-wave power amplifiers circuit according to claim 8, which is characterized in that work(divides matching unit between the grade
The respective power of signal of described first sub- interstage matched unit and the second sub- interstage matched unit output is divided into
Two parts.
10. millimeter-wave power amplifiers circuit according to claim 3, which is characterized in that the default impedance is 50 Europe
Nurse impedance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711441664.1A CN108377136A (en) | 2017-12-27 | 2017-12-27 | Millimeter wave power amplifier circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711441664.1A CN108377136A (en) | 2017-12-27 | 2017-12-27 | Millimeter wave power amplifier circuit |
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| CN108377136A true CN108377136A (en) | 2018-08-07 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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Application publication date: 20180807 |